ABU2516 ABU2516 Data Sheet 5 ~ 1400 MHz CATV Push-pull Amplifier MMIC 1. Product Overview 1.1 General Description ABU2516, a wide-band linear push-pull amplifier MMIC, has high linearity and low noise over a wide range of 5 ~ 1400 MHz, being suitable to low return loss in the reverse (5 ~ 300 MHz) and flat gain in the forward path (50 ~ 1400 MHz) in the fiber receiver, distribution amplifiers and drop amplifiers of CATV. The gain slope is adjustable with the off-chip feedback circuit components. The amplifier is available in an SOIC8 package and passes through the stringent 100% DC & RF test in an automated test handler. 1.2 Features Low-noise and high linearity Wide-band CATV application at 5 ~ 1400 MHz 75 input & output matching Robust under hard operation conditions 17.6 dB gain at 50 MHz CSO of 68 dBc, CTB of 62 dBc @ Pout = 102 dBV flat for NTSC 77 channels, device voltage = +5 V Single supply: +5 V 1.3 Applications CATV Reverse at 5 ~ 300 MHz CATV Forward at 50 ~ 1400 MHz HFC Nodes, Head-end Equipment 1.4 Package Profile & RoHS Compliance SOIC8, 6.0x4.8 mm2, surface mount 1/12 ASB Inc. [email protected] RoHS-compliant September 2017 ABU2516 2. Summary on Product Performances 2.1 Typical Performance Supply voltage = +5 V, TA = +25 C, ZO = 75 Parameter Typical Unit Frequency 5 50 300 MHz Noise Figure 3.8 2.4 2.3 dB Gain 17.3 17.6 17.4 dB S11 -20 -18 -20 dB S22 -17 -20 -20 dB Output IP3 401) 432) 432) dBm IP23) 63 71 71 dBm Output P1dB 24 26 26 dBm CSO 684) dBc CTB 624) dBc Current 280 mA Device Voltage +5 V Output 1) OIP3 is measured with two tones at an output power of +10 dBm/tone separated by 1 MHz. 2) OIP3 is measured with two tones at an output power of +10 dBm/tone separated by 6 MHz. 3) OIP2 is measured with two tones at an output power of +10 dBm/tone separated by 6 MHz. 4) CSO & CTB measured at Pout = 102 dBV flat for NTSC 77 channels. 2.2 Product Specification Supply voltage = +5 V, TA = +25 C, ZO = 75 Parameter Min Typ Max Unit Frequency 50 MHz Noise Figure 2.4 dB Gain 16.6 17.6 18.6 dB S11 -18 dB S22 -20 dB Output IP31) 43 dBm Output IP22) 71 dBm Output P1dB 26 dBm Current 240 Device Voltage 280 320 +5 mA V 1) OIP3 is measured with two tones at an output power of +10 dBm/tone separated by 6 MHz. 2) OIP2 is measured with two tones at an output power of +10 dBm/tone separated by 6 MHz. 2/12 ASB Inc. [email protected] September 2017 ABU2516 2.3 Pin Configuration Pin Description 1,4 RF_IN 2, 3, 6, 7 NC or GND 5, 8 RF_OUT & Bias 2.4 Simplified Outline 1 8 2 7 3 6 4 5 Absolute Maximum Ratings, TA = +25 C Parameters Max. Ratings Operation Case Temperature -40 to 85 C Storage Temperature -40 to 150 C Device Voltage +6 V Device Current 360 mA Power Dissipation +1.8 W Operation Junction Temperature +150 C Input RF Power (CW, 75 matched) +26 dBm Note: operation of this device in excess of any of these limits may cause permanent damage. 2.5 Thermal Resistance Symbol Description Typ Unit Rth Thermal resistance from junction to lead 32 C/W 2.6 ESD Classification & Moisture Sensitivity Level ESD Classification HBM Class 1A CAUTION: Gallium Arsenide Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these devices. Moisture Sensitivity Level MSL 3 at 260 C reflow (Intentionally Blanked) 3/12 ASB Inc. [email protected] September 2017 ABU2516 3. Application: 5 ~ 300 MHz (Vdevice = +5 V) 3.1 Application Circuit & Evaluation Board Vdevice = +5 V C9 L1 C7 C11 R1 C1 C3 C5 C4 C6 T2_MABA_007159 RF IN ABU2516 C13 RF OUT T1_MABA_007159 C2 C8 C12 R2 L2 C10 Vdevice = +5 V PCB Information Material FR4 Thickness (mm) 0.8 Size (mm) 40x40 EB No. EB-S8-H8 Bill of Material 4/12 Symbol Value Size Description Manufacturer ABU2516 - - MMIC Amplifier ASB C1, C2, C3, C4, C5, C6 1 F 0603 DC blocking capacitor Murata C7, C8 1 F 0603 Feedback capacitor Murata C9, C10 10 F 0805 Decoupling capacitor Murata C11, C12 1.2 pF 0603 Matching capacitor Murata C13 0.75 pF 0603 Matching capacitor Murata L1, L2 22 H 1206 RF choke inductor Murata R1, R2 360 0603 Feedback resistor Samsung T1, T2 1:1 - Transformer balun MACOM ASB Inc. [email protected] September 2017 ABU2516 3.2 Performance Table Supply voltage = +5 V, TA = +25 C, ZO = 75 Parameter Typical Unit Frequency 5 50 300 MHz Noise Figure 3.8 2.4 2.3 dB Gain 17.3 17.6 17.4 dB S11 -20 -18 -20 dB S22 -17 -20 -20 dB Output IP3 401) 432) 432) dBm Output IP23) 63 71 71 dBm Output P1dB 24 26 26 dBm CSO 684) dBc CTB 624) dBc Current 265 mA Device Voltage +5 V 1) OIP3 is measured with two tones at an output power of +10 dBm/tone separated by 1 MHz. 2) OIP3 is measured with two tones at an output power of +10 dBm/tone separated by 6 MHz. 3) OIP2 is measured with two tones at an output power of +10 dBm/tone separated by 6 MHz. 4) CSO & CTB measured at Pout = 102 dBV flat for NTSC 77 channels. *Note : Pout is 105 dBV @ flat ch. and 110 dBV @ 9 dB tilt for CENELEC 42 ch. at CSO, CTB > 60 dBc. 40 30 20 10 0 -10 -20 -30 -40 -50 -60 S21 S12 S22 K 0 5/12 S11 50 ASB Inc. 100 150 200 Frequency (MHz) [email protected] 250 10 9 8 7 6 5 4 3 2 1 0 Stability Factor, K Plot of S-parameter & Stability Factor S-parameter (dB) 3.3 300 September 2017 ABU2516 3.4 Plots of Noise Figure and Performances with Temperature 6 5 +25 °C 20 +85 °C Gain (dB) 4 NF (dB) 25 -40 °C 3 15 10 -40 °C 2 +25 °C 5 1 +85 °C 0 0 0 50 100 150 200 Frequency (MHz) 250 0 0 300 50 100 150 200 Frequency (MHz) 250 0 -40 °C -40 °C +25 °C -10 +85 °C S22 (dB) S11 (dB) +25 °C -10 300 +85 °C -20 -20 -30 -40 -30 0 50 100 150 200 Frequency (MHz) 250 0 300 50 100 150 200 Frequency (MHz) 250 300 20 275 Frequency = 50 MHz 19 Gain (dB) Current (mA) 270 265 260 17 16 15 255 -60 6/12 18 -40 -20 0 20 40 Temperature (°C) 60 80 -60 100 ASB Inc. [email protected] -40 -20 0 20 40 Temperature (°C) 60 80 100 September 2017 ABU2516 4. Application: 50 ~ 1200 MHz (Vdevice = +5 V) 4.1 Application Circuit & Evaluation Board Vdevice = +5 V C7 L1 C5 C9 R1 C1 L3 C3 L4 C4 T2_MABA_007159 RF IN ABU2516 C11 RF OUT T1_MABA_007159 C2 C6 C10 R2 L2 C8 Vdevice = +5 V PCB Information Material FR4 Thickness (mm) 0.8 Size (mm) 40x40 EB No. EB-S8-H8 Bill of Material 7/12 Symbol Value Size Description Manufacturer ABU2516 - - MMIC Amplifier ASB C1, C2, C3, C4 1 nF 0603 DC blocking capacitor Murata C5, C6 10 nF 0603 Feedback capacitor Murata C7, C8 10 F 0805 Decoupling capacitor Murata C9, C10 1.2 pF 0603 Matching capacitor Murata C11 1.5 pF 0603 Matching capacitor Murata L1, L2 1 H 1206 RF choke inductor Murata L3, L4 2.7 nH 0603 Matching inductor Murata R1, R2 330 0603 Feedback resistor Samsung T1, T2 1:1 - Transformer balun MACOM ASB Inc. [email protected] September 2017 ABU2516 4.2 Performance Table Supply voltage = +5 V, TA = +25 C, ZO = 75 Parameter Typical Unit Frequency 50 500 1200 MHz Noise Figure 2.6 2.7 3.0 dB Gain 16.9 16.8 16.5 dB S11 -17 -20 -20 dB S22 -18 -20 -16 dB IP31) 43 42 40 dBm Output IP22) 68 Output P1dB 26 CSO 683) dBc CTB 623) dBc Current 280 mA Device Voltage +5 V Output dBm 26 25 dBm 1) OIP3 is measured with two tones at an output power of +10 dBm/tone separated by 6 MHz. 2) OIP2 is measured with two tones (F1 = 400 MHz + F2 = 450 MHz) at an output power of +10 dBm/tone. 3) CSO & CTB measured at Pout = 102 dBV flat for NTSC 77 channels. *Note : Pout is 105 dBV @ flat ch. and 110 dBV @ 9 dB tilt for CENELEC 42 ch. at CSO, CTB > 60 dBc. Plot of S-parameter & Stability Factor 40 30 20 10 0 -10 -20 -30 -40 -50 -60 S21 S11 K 0 8/12 S22 S12 200 400 600 800 Frequency (MHz) ASB Inc. [email protected] 1000 10 9 8 7 6 5 4 3 2 1 0 1200 Stability Factor, K S-parameter (dB) 4.3 September 2017 ABU2516 5. Application: 50 ~ 1400 MHz (Vdevice = +5 V) 5.1 Application Circuit & Evaluation Board Vdevice = +5 V C7 L1 R1 C9 C1 C5 L3 L5 C3 L6 C4 T2_MABA_007159 RF IN ABU2516 C11 RF OUT T1_MABA_007159 C2 L4 R2 C10 C6 L2 C8 Vdevice = +5 V PCB Information Material FR4 Thickness (mm) 0.8 Size (mm) 40x40 EB No. EB-S8-H8 Bill of Material 9/12 Symbol Value Size Description Manufacturer ABU2516 - - MMIC Amplifier ASB C1, C2, C3, C4 1 nF 0603 DC blocking capacitor Murata C5, C6 10 nF 0603 Feedback capacitor Murata C7, C8 10 F 0805 Decoupling capacitor Murata C9, C10 1.2 pF 0603 Matching capacitor Murata C11 1 pF 0603 Matching capacitor Murata L1, L2 1 H 1206 RF choke inductor Murata L3, L4 1.8 nH 0603 Matching inductor Murata L3, L4 2.7 nH 0603 Matching inductor Murata R1, R2 330 0603 Feedback resistor Samsung T1, T2 1:1 - Transformer balun MACOM ASB Inc. [email protected] September 2017 ABU2516 5.2 Performance Table Supply voltage = +5 V, TA = +25 C, ZO = 75 Parameter Typical Unit Frequency 50 500 1200 1400 MHz Noise Figure 2.7 2.8 2.9 3.1 dB Gain 16.9 16.8 16.8 16.8 dB S11 -17 -20 -15 -20 dB S22 -19 -20 -20 -17 dB IP31) 43 43 42 41 dBm Output IP22) 68 Output P1dB 26 Current 280 mA Device Voltage +5 V Output dBm 26 26 26 dBm 1) OIP3 is measured with two tones at an output power of +10 dBm/tone separated by 1 MHz. 2) OIP2 is measured with two tones (F1 = 400 MHz + F2 = 450 MHz) at an output power of +10 dBm/tone. 40 30 20 10 0 -10 -20 -30 -40 -50 -60 0 10/12 10 9 S21 8 7 6 5 S22 S12 4 3 S11 2 K 1 0 400 600 800 1000 1200 1400 Frequency (MHz) 200 ASB Inc. [email protected] Stability Factor, K Plot of S-parameter & Stability Factor S-parameter (dB) 5.3 September 2017 ABU2516 6. Package Outline (SOIC8) Part No. ABU2516 Symbols A A1 A2 B C D D2 E E1 E2 e L y \ L1-L1 L1 Dimensions (In mm) MIN NOM 1.40 1.50 0.00 ----1.45 0.33 --0.19 --4.80 --3.20 3.30 5.80 6.00 3.80 3.90 2.30 2.40 --1.27 0.40 --------0 ----1.04REF MAX 1.60 0.10 --0.51 0.25 5.00 3.40 6.20 4.00 2.50 --1.27 0.10 8 0.12 le is RF and DC ground. 7. Surface Mount Recommendation (In mm) NOTE 1. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 2. To ensure reliable operation, device ground paddle-to-ground pad soldering is critical. 3. Add mounting screws near the part to fasten the board to a heat sinker. Ensure that the ground & thermal via region contacts the heat sinker. 4. A proper heat dissipation path underneath the area of the PCB for the mounted device is strictly required for proper thermal operation. Damage to the device can result from inappropriate heat dissipation. 11/12 ASB Inc. [email protected] September 2017 ABU2516 8. Recommended Soldering Reflow Profile 260 C 20~40 sec Ramp-up (3 C/sec) Ramp-down (6 C/sec) 200 C 150 C 60~180 sec (End of Datasheet) Copyright 2017 ASB Inc. All rights reserved. Specifications subject to change without notice. ASB assumes no responsibility for any errors which may appear in this datasheet. No part of the datasheet may be copied or reproduced in any form or by any means without the prior written consent of ASB. 12/12 ASB Inc. [email protected] September 2017