ATP104 Ordering number : ENA1406A SANYO Semiconductors DATA SHEET ATP104 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance Slim package Halogen free compliance • • • Large current 4.5V drive Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) Unit --30 V ±20 V --75 A Allowable Power Dissipation ID IDP PD Channel Temperature Tch 150 Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *1 EAS IAV 130 mJ 38 A Drain Current (PW≤10μs) Avalanche Current *2 PW≤10μs, duty cycle≤1% Tc=25°C --225 A 60 W °C Note : *1 VDD=15V, L=100μH, IAV=38A *2 L≤100μH, Single pulse Package Dimensions Product & Package Information unit : mm (typ) 7057-001 • Package : ATPAK • JEITA, JEDEC :• Minimum Packing Quantity : 3,000 pcs./reel ATP104-TL-H 1.5 6.5 0.4 0.4 0.5 4 Packing Type: TL 4.6 2.6 Marking ATP104 6.05 4.6 9.5 7.3 LOT No. TL Electrical Connection 0.8 2.3 0.6 2.3 0.55 0.7 3 0.1 0.5 1 1.7 4,2 2 0.4 1 : Gate 2 : Drain 3 : Source 4 : Drain 1 3 SANYO : ATPAK http://semicon.sanyo.com/en/network 61312 TKIM/20409PA MSIM TC-00001830 No.A1406-1/7 ATP104 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions ID=--1mA, VGS=0V VDS=--30V, VGS=0V Ratings min typ Unit max --30 V Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current IGSS Cutoff Voltage VGS(off) VGS=±16V, VDS=0V VDS=--10V, ID=--1mA Forward Transfer Admittance | yfs | VDS=--10V, ID=--38A 70 RDS(on)1 ID=--38A, VGS=--10V 6.4 8.4 mΩ RDS(on)2 ID=--19A, VGS=--4.5V 9.6 13.5 mΩ Static Drain-to-Source On-State Resistance Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance --1.2 --1 μA ±10 μA --2.6 V S 3950 pF 880 pF Crss 610 pF Turn-ON Delay Time td(on) 24 ns Rise Time tr 520 ns Turn-OFF Delay Time td(off) 290 ns Fall Time tf Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=--10V, f=1MHz See specified Test Circuit. VDS=--15V, VGS=--10V, ID=--75A 260 ns 76 nC 18 nC 13 IS=--75A, VGS=0V --1.02 nC --1.5 V Switching Time Test Circuit 0V --10V VDD= --15V VIN ID= --38A RL=0.39Ω VIN D PW=10μs D.C.≤1% VOUT G ATP104 P.G 50Ω S Ordering Information Device ATP104-TL-H Package Shipping memo ATPAK 3,000pcs./reel Pb Free and Halogen Free No.A1406-2/7 ATP104 --45 --40 VGS= --3.5V --35 --30 --25 --20 --15 --40 --30 --1.0 --1.5 RDS(on) -- VGS 30 26 ID= --19A --38A 20 --0.5 --1.0 --1.5 18 16 14 12 10 8 6 --2.0 --2.5 --3.0 --3.5 --4.0 Cutoff Voltage, VGS(off) -- V --4.5 IT14389 RDS(on) -- Tc 18 24 22 0 IT14388 Tc=25°C Single pulse 28 0 --2.0 --2 5°C 25° C --0.5 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 0 75°C --50 --10 Drain-to-Source Voltage, VDS -- V Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ --60 --20 --10 --5 0 --70 Tc= 75° C --50 Tc= --25° C --80 --16.0 -V 1 --55 VDS= --10V --90 Drain Current, ID -- A --60 Drain Current, ID -- A --4.0V 0.0V --65 --6 .0V --4 .5 V --8.0 V --70 ID -- VGS(off) --100 Tc=25°C 25° C ID -- VDS --75 Single pulse 16 14 19A 12 = -, ID 4.5V = -VGS 10 8A = --3 0V, I D 1 = VGS 8 6 4 4 --8 --10 --12 --14 Gate-to-Source Voltage, VGS -- V 100 7 °C 25 3 C 5° 2 = Tc 10 --2 °C 75 7 5 3 2 1.0 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 Drain Current, ID -- A 3 2 --100 VGS=0V 7 Single pulse 5 3 2 --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 --0.01 7 5 3 2 --0.001 --0.2 --0.4 SW Time -- ID 100 125 IS -- VSD --0.6 150 IT14391 --0.8 --1.0 --1.2 --1.4 IT14393 f=1MHz 7 5 1000 7 5 td(off) 3 tf 2 100 tr 7 5 3 Ciss 3 2 1000 Coss 7 Crss 5 td(on) 2 10 --0.1 75 Ciss, Coss, Crss -- VDS 10000 VDD= --15V VGS= --10V 50 Diode Forward Voltage, VSD -- V IT14392 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 2 5 7 --100 25 Case Temperature, Tc -- °C Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S VDS= --10V 5 0 --25 IT14390 | yfs | -- ID 2 2 --50 --16 --25° C --6 25°C --4 5°C --2 Tc= 7 2 0 3 2 3 5 7 --1.0 2 3 5 7 --10 Drain Current, ID -- A 2 3 5 7 --100 IT14394 2 0 --5 --10 --15 --20 --25 Drain-to-Source Voltage, VDS -- V --30 IT14395 No.A1406-3/7 ATP104 VGS -- Qg --10 VDS= --15V ID= --75A --8 --7 --6 --5 --4 --3 --2 0 10 20 30 40 50 60 Total Gate Charge, Qg -- nC PD -- Tc 70 80 --10 7 5 40 30 20 10 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT14398 10 0μ 0μ s s Operation in this area is limited by RDS(on). 3 2 --1.0 7 5 Tc=25°C Single pulse 2 3 5 7 --1.0 2 3 5 7 --10 2 Drain-to-Source Voltage, VDS -- V 3 5 IT14397 EAS -- Ta 120 50 20 1m s 10 ms DC 10 op 0m era s tio n 3 2 IT14396 60 0 PW≤10μs 1 ID= --75A --0.1 --0.1 Avalanche Energy derating factor -- % Allowable Power Dissipation, PD -- W 70 0 --100 7 5 3 2 --1 0 IDP= --225A 3 2 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V --9 ASO 5 100 80 60 40 20 0 0 25 50 75 100 125 Ambient Temperature, Ta -- °C 150 175 IT10478 No.A1406-4/7 ATP104 Taping Specification ATP104-TL-H No.A1406-5/7 ATP104 Outline Drawing ATP104-TL-H Land Pattern Example Mass (g) Unit 0.266 mm * For reference Unit: mm 6.7 6.5 1.6 2 1.5 2.3 2.3 No.A1406-6/7 ATP104 Note on usage : Since the ATP104 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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