CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 100 Volts CHM1710PAPT CURRENT 17 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. TO-252A FEATURE * Small package. (TO-252A) .280 (7.10) .238 (6.05) * Super high dense cell design for extremely low RDS(ON). * High power and current handing capability. .094 (2.40) .087 (2.20) .035 (0.89) .018 (0.45) CONSTRUCTION * N-Channel Enhancement (1) (3) (2) .035 (0.90) .025 (0.64) .417 (10.6) .346 (8.80) .261 (6.63) .213 (5.40) .220 (5.59) .195 (4.95) .102 (2.59) .078 (1.98) .024 (0.61) .016 (0.40) 1 Gate D (3) CIRCUIT 2 Source 3 Drain( Heat Sink ) (1) G Dimensions in inches and (millimeters) S (2) Absolute Maximum Ratings Symbol TO-252A TA = 25°C unless otherwise noted Parameter CHM1710PAPT Units VDSS Drain-Source Voltage 100 V VGSS Gate-Source Voltage ±20 V Maximum Drain Current - Continuous 17 ID A - Pulsed (Note 3) PD Maximum Power Dissipation at Tc = 25 °C TJ TSTG 68 50 W Operating Temperature Range -55 to 150 °C Storage Temperature Range -55 to 150 °C Note : 1. Surface Mounted on FR4 Board , t <=10sec 2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2% 3. Repetitive Rating , Pulse width linited by maximum junction temperature 4. Guaranteed by design , not subject to production trsting Thermal characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 50 °C/W 2007-05 RATING CHARACTERISTIC CURVES ( CHM1710PAPT ) Electrical Characteristics T Symbol A = 25°C unless otherwise noted Parameter Conditions Min 100 Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA IDSS Zero Gate Voltage Drain Current VDS = 100 V, VGS = 0 V I GSSF Gate-Body Leakage I GSSR Gate-Body Leakage ON CHARACTERISTICS V 1 µA VGS = 20V,VDS = 0 V +100 nA VGS = -20V, VDS = 0 V -100 nA (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 2 4 V RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=15A 65 85 mΩ g FS Forward Transconductance VDS =2.5V, ID = 15A S 11 SWITCHING CHARACTERISTICS (Note 4) Qg Total Gate Charge Q gs Gate-Source Charge Q Gate-Drain Charge gd VDS=80V, ID=19A VGS=10V 26 34 nC 3.3 16.2 t on Turn-On Time V DD= 50V 17 34 tr Rise Time I D =19A , VGS = 10 V 51 100 t off Turn-Off Time RGEN= 25 Ω 16 32 tf Fall Time 71 140 nS DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Drain-Source Diode Forward Current 15 A V SD Drain-Source Diode Forward Voltage I S = 15A , VGS = 0 V 1.5 V RATING CHARACTERISTIC CURVES ( CHM1710PAPT ) Typical Electrical Characteristics Figure 2. Transfer Characteristics Figure 1. Output Characteristics 50 50 V G S =1 0 V 40 I D , DRAIN CURRENT (A) I D , DRAIN CURRENT (A) 40 VG S =6 . 0 V 30 VG S =5 . 0 V 20 VG S =4 . 0 V 10 TJ=25°C 30 20 TJ=125°C 10 TJ=-55°C VG S =3 . 0 V 0 0 0 1.0 6.0 4.0 2.0 V DS , DRAIN-TO-SOURCE VOLTAGE (V) 6.0 7.0 VGS=10V ID=15A 1.9 R DS(on) , NORMALIZED 8 6 4 2 0 0 5 10 15 20 Qg , TOTAL GATE CHARGE (nC) 25 30 Figure 5. Gate Threshold Variation with Temperature VDS=VGS ID=250uA 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 TJ , JUNCTION T EMPERATURE (°C) 125 150 DRAIN-SOURCE ON-RESISTANCE VGS , GATE TO SOURCE VOLTAGE (V) 5.0 Figure 4. On-Resistance Variation with Temperature VDS=80V ID=19A THRESHOLD VOLTAGE 4.0 2.2 10 Vth , NORMALIZED GATE-SOURCE 3.0 VGS , GATE-TO-SOURCE VOLTAGE (V) Figure 3. Gate Charge 1.3 2.0 1.6 1.3 1.0 0.7 0.4 -100 -50 0 50 100 TJ , JUNCTION T EMPERATURE (°C) 150 200