BAV70 FM120-M+ BAV99 THRU BAW56 FM1200-M+ WILLAS SOT-23 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features process design, excellent power dissipation offers • Batch SWITCHING DIODE better reverse leakage current and thermal resistance. FEATURES • Low profile surface mounted application in order to optimize board space. z Fast Switching Speed • Low power loss, high efficiency. z For General Purpose Switching Applications capability, low forward voltage drop. • High current High surge capability. • z High Conductance • Guardring for overvoltage protection. z Pb-Free package is available • Ultra high-speed switching. RoHS product for packing codemetal suffix ”G” junction. epitaxial planar chip, silicon • Silicon Lead-free parts meet environmental standards of • Halogen free product for packing code suffix “H” z SOD-123H SOT-23 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 Moisture Level 1 suffix "G" product for packing code • RoHSSensitivity Halogen free product for packing code suffix "H" Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : A1 Indicated by cathode band BAW56 Marking: BAV70 Marking: A4 Position : Any • Mounting Maximum Ratings @Ta=25℃ • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) BAV99 Marking: A7 Parameter Symbol CHARACTERISTICS Limit MAXIMUM RATINGS AND ELECTRICAL Ratings at 25℃ ambient temperature unless otherwise specified. VR Reverse Voltage Single phase half wave, 60Hz, resistive of inductive load. IF Forward Currentload, derate current by 20% For capacitive RATINGS Peak Forward Surge Current Unit 70 V 200 mA 500FM160-MH FM180-MH FM1100-MH FM1150-MH SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH mA FM1200-MH U IFM(surge) Marking Code Power Dissipation 12 20 13 30 14 40 15 16 225 50 60 18 80 10 100 115 mW 150 120 200 V VRMSRθJA 14 21 28 35 556 42 56 70 140 V 20 30 40 50 80 100 105 ℃/W 200 V VRRM Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Thermal Resistance Junction to Ambient Maximum DC Blocking Voltage VDC Junction Temperature IO Maximum Average Forward Rectified Current Storage Temperature Range Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Electrical Characteristics @Ta=25℃ Typical Thermal Resistance (Note 2) PD TJ Parameter 30 RΘJA 40 120 TJ Storage Temperature Range Reverse breakdown voltage V TSTG R CHARACTERISTICS Maximum Forward Voltage at 1.0A DC Forward Maximumvoltage Average Reverse Current at @T A=25℃ VSYMBOL F1 VF2 VF VF3 IR Min Typ -55 to +125 Max 70 Unit V -I65 to +175 R=100μA 0.715 V FM160-MH IF=1mA FM120-MH FM130-MH FM140-MH FM150-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U 0.500.855 V 0.70 IF=10mA 0.85 1.25 V IF=150mA IR Reverse current 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2.5 μA VR=70V VR=0,f=1MHz Capacitance between terminals CT 1.5 pF Reverse recovery time t rr 6 ns 2012-06 2012-1 0.9 0.92 0.5 VF4 2- Thermal Resistance From Junction to Ambient A Conditions -55 to +150 IF=50mA 10 NOTES: A ℃ V @T A=125℃ ℃ ℃ 1 Rated DC Blocking Voltage 150 1.0 IFSM Symbol Operating Temperature Range 60 -55~+150 TSTG CJ Typical Junction Capacitance (Note 1) 150 V m IF = IR = 10mA, Irr= 0.1 x IR, RL = 100Ω WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. BAV70 FM120-M+ BAV99 THRU BAW56 FM1200-M+ WILLAS SOT-23 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features Typical Characteristics • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to Reverse 1000 0.146(3.7) Characteristics 0.130(3.3) (nA) 300 Ta =2 5℃ MIL-STD-19500 /228 10 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data 3 : UL94-V0 rated flame retardant • Epoxy 1 • Case : Molded plastic, SOD-123H , •0.3Terminals :Plated terminals, solderable per MIL-STD-750 REVERSE CURRENT IR Ta =1 00 ℃ FORWARD CURRENT IF (mA) optimize board space. high efficiency. • Low power loss,Forward Characteristics •300High current capability, low forward voltage drop. • High surge capability. •100Guardring for overvoltage protection. • Ultra high-speed switching. • 30Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Ta=100℃ 100 30 10 0.040(1.0) 0.024(0.6) Ta=25℃ 0.031(0.8) Typ. 0.031(0.8) Typ. 3 Method 2026 •0.1Polarity : Indicated by cathode band 1.2 0.0 0.4 0.8 FORWARD VOLTAGE V (V) • Mounting Position : Any • Weight : Approximated 0.011 gram 1 1.6 Dimensions in inches and (millimeters) 20 40 60 0 REVERSE VOLTAGE F VR 80 (V) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Characteristics Single phase half wave, Capacitance 60Hz, resistive of inductive load. 1.4 For capacitive load, derate current by 20% Ta=25℃ f=1MHz RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U 1.3 VRRM 13 30 VRMS 14 Maximum DC Blocking Voltage VDC 20 30 1.2 IO Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave IFSM superimposed on rated load (JEDEC method) 1.1 RΘJA Typical Thermal Resistance (Note 2) CJ Typical Junction Capacitance (Note 1) 0 5 10 REVERSE VOLTAGE CHARACTERISTICS 15 VR (V) TSTG 200 15 50 16 60 115 150 120 200 V 28 35 42 56 70 105 140 40 50 60 80 100 150 200 V 150 100 0 10 100 V -55 to +125 20 18 80 1.0 A 30 A 40 120 ℃ -55 to +150 0 25 50 - 65 to +175 75 100 Ta 125 150 (℃ ) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage 14 40 AMBIENT TEMPERATURE VF Maximum Forward Voltage at 1.0A DC 250 50 TJ Operating Temperature Range 21 POWER DISSIPATION Maximum RMS Voltage PD Maximum Recurrent Peak Reverse Voltage 12 20 (mW) CAPACITANCE BETWEEN TERMINALS CT (pF) Marking Code Storage Temperature Range 1.0 Power Derating Curve 300 @T A=125℃ IR 0.50 0.70 0.85 0.9 0.92 0.5 10 V m NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-1 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. BAV70 FM120-M+ BAV99 THRU BAW56 FM1200-M+ WILLAS SOT-23 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. Outline Drawing SOT-23 SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) .122(3.10) • Epoxy : UL94-V0 rated flame retardant .106(2.70) Halogen free product for packing code suffix "H" .063(1.60) .047(1.20) 0.071(1.8) 0.056(1.4) .006(0.15)MIN. MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Mechanical data • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.012(0.3) Typ. 0.031(0.8) Typ. 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U Marking Code .080(2.04) Maximum RMS Voltage .070(1.78) VRRM Maximum Recurrent Peak Reverse Voltage Maximum DC Blocking Voltage Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Typical Thermal Resistance (Note 2) Storage Temperature Range 14 40 15 50 CHARACTERISTICS 21 28 35 42 20 30 40 50 60 80 100 120 200 V 105 140 V 150 200 V 150 IO 1.0 A IFSM 30 A RΘJA 40 120 ℃ -55 to +125 -55 to +150 - 65 to +175 @T A=125℃ IR .020(0.50) .012(0.30) 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 0.50 0.70 0.85 0.9 0.92 0.5 .055(1.40) .035(0.89) VF Maximum Average Reverse Current at @T A=25℃ 2- Thermal Resistance From Junction to Ambient 100 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U Maximum Forward Voltage at 1.0A DC NOTES: 18 80 14 TSTG .004(0.10)MAX. .008(0.20) 10 115 16 60 VDC TJ Operating Temperature Range 13 30 VRMS CJ Typical Junction Capacitance (Note 1) 12 20 .003(0.08) 56 70 Maximum Average Forward Rectified Current Rated DC Blocking Voltage .083(2.10) .110(2.80) Dimensions in inches and (millimeters) 10 V m Dimensions in inches and (millimeters) 2012-06 2012-1 Rev.D CORP WILLAS ELECTRONIC WILLAS ELECTRONIC CORP.