Diode Semiconductor Korea ERD38-04 --- ERD38-06 VOLTAGE RANGE: 400 --- 600 V CURRENT: 1.5 A HIGH EFFICIENCY RECTIFIERS FEATURES Low cost Diffused junction DO - 15 Low leakage Low forward voltage drop High current capability Easily cleaned with Alcohol,Isopropanol and similar solvents The plastic material carries U/L recognition 94V-0 MECHANICAL DATA Case:JEDEC DO--15,molded plastic Terminals: Axial lead ,solderable per MIL- STD-202,Method 208 Dimensions in millimeters Polarity: Color band denotes cathode Weight: 0.014ounces,0.39 grams Mounting position: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. ERD38 - 04 ERD38 - 05 ERD38 - 06 UNITS Maximum recurrent peak reverse voltage VRRM 400 500 600 V Maximum RMS voltage VRMS 280 350 420 V Maximum DC blocking voltage VDC 400 500 600 V Maximum average forw ard rectified current 9.5mm lead length, @TA=75 IF(AV) 1.5 A IFSM 80.0 A VF 2.5 V Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @TJ =125 Maximum instantaneous forw ard voltage @ 1.5A Maximum reverse current @TA=25 at rated DC blocking voltage @TA=100 5.0 IR 50 Maximum reverse recovery time (Note1) trr Typical junction capacitance (Note2) CJ Typical thermal resistance (Note3) RθJA 50 TJ - 55 ---- + 150 TSTG - 55 ---- + 150 Operating junction temperature range Storage temperature range A 100.0 50 ns 30 pF /W NOTE: 1. Measured with I F=0.5A, I R=1A, I rr=0.25A. 2. Measured at 1.0MH Z and applied rev erse v oltage of 4.0V DC. 3. Thermal resistance f rom junction to ambient. www.diode.kr Diode Semiconductor Korea ERD38-04 --- ERD38-06 FIG.1 --TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC 10 N 1. 50 N 1. trr +0.5A D.U.T. (+) PULSE GENERATOR (NOTE2) (+) 25VDC (approx) (-) OSCILLOSCOPE (NOTE1) 1 NONINDUCTIVE 0 -0 .25 A (-) -1.0A 1 cm NOTES:1.RISE TIME=7ns MAX.INPUT IMPEDANCE=1MΩ.22pF 2.RISE TIME=10ns MAX.SOURCE IMPEDANCE=50Ω. SET TIME BASE FOR 20 ns/cm FIG.4-- PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT. AMPERES 1.4 1.2 1 Single Phase Half Wave 60Hz Resistive or Inductive Load 0.8 0.6 0.4 0.2 0 20 0 40 60 80 100 120 140 150 90 80 70 60 50 40 20 10 0 50 30 TJ=25 5 0.1 0.2 0.4 1 2 4 0 50 100 150 250 200 10 20 REVESE VOLTAGE,VOLTS 40 100 FIG.1 -- TYPICAL FORWARD CHARACTERISTIC 10 AMPERES 100 0 T J =25 8.3m s Single Half Sine-W ave 30 NUMBER OF CYCLES AT 60Hz FIG.5--JUNCTION CAPACITANCE CHARACTERISTICS JUNCTION CAPACITANCE,pF 100 AMBIENT TEMPERATURE. INSTANTANEOUS FORWARD CURRENT AMPERES AVERAGE FORWARD RECTIFIED CURRENT. FIG.3 --FORWARD DERATING CURVE 1 .0 T J=25 P u ls e W id th = 3 0 0 µ S 0 .1 0 .0 1 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4 INSTANTANEOUS FORWARD VOLTAGE, VOLTS www.diode.kr