APT8020B2LL
APT8020LLL
800V 38A
0.200Ω
B2LL
POWER MOS 7
R
MOSFET
T-MAX™
TO-264
®
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
®
losses are addressed with Power MOS 7 by significantly lowering RDS(ON)
®
and Qg. Power MOS 7 combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
VDSS
ID
D
• Increased Power Dissipation
• Easier To Drive
• Popular T-MAX™ or TO-264 Package
MAXIMUM RATINGS
Symbol
LLL
G
S
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT8020B2LL_LLL
UNIT
800
Volts
Drain-Source Voltage
38
Continuous Drain Current @ TC = 25°C
1
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
VGSM
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
694
Watts
Linear Derating Factor
5.56
W/°C
PD
TJ,TSTG
152
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
EAS
1
-55 to 150
Amps
38
1
Single Pulse Avalanche Energy
°C
300
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
Volts
50
4
mJ
3000
STATIC ELECTRICAL CHARACTERISTICS
MIN
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
800
RDS(on)
Drain-Source On-State Resistance
IDSS
IGSS
VGS(th)
2
(VGS = 10V, ID = 19A)
TYP
MAX
Volts
0.200
Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V)
100
Zero Gate Voltage Drain Current (VDS = 640V, VGS = 0V, TC = 125°C)
500
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
Ohms
µA
±100
nA
5
Volts
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
UNIT
7-2004
Characteristic / Test Conditions
050-7063 Rev C
Symbol
DYNAMIC CHARACTERISTICS
Symbol
APT8020B2LL_LLL
Test Conditions
Characteristic
MIN
TYP
Ciss
Input Capacitance
Coss
Output Capacitance
VDS = 25V
1000
Reverse Transfer Capacitance
f = 1 MHz
190
VGS = 10V
195
VDD = 400V
27
Crss
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain ("Miller") Charge
td(on)
Turn-on Delay Time
tr
ID = 38A @ 25°C
tf
14
VDD = 400V
RG = 0.6Ω
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
9
INDUCTIVE SWITCHING @ 25°C
6
875
VDD = 533V, VGS = 15V
ID = 38A, RG = 5Ω
825
INDUCTIVE SWITCHING @ 125°C
6
ns
39
ID = 38A @ 25°C
Fall Time
nC
12
VGS = 15V
Turn-off Delay Time
pF
130
RESISTIVE SWITCHING
Rise Time
td(off)
UNIT
5200
VGS = 0V
3
MAX
µJ
1450
VDD = 533V, VGS = 15V
ID = 38A, RG = 5Ω
985
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
MIN
Characteristic / Test Conditions
TYP
MAX
38
UNIT
IS
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current
1
VSD
Diode Forward Voltage
2
t rr
Reverse Recovery Time (IS = -38A, dl S/dt = 100A/µs)
920
ns
Q
Reverse Recovery Charge (IS = -38A, dl S/dt = 100A/µs)
20.7
µC
rr
dv/
dt
Peak Diode Recovery
dv/
152
(Body Diode)
1.3
(VGS = 0V, IS = -38A)
dt
Amps
Volts
10
V/ns
MAX
UNIT
5
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
RθJC
Junction to Case
RθJA
Junction to Ambient
TYP
0.18
40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 4.16mH, RG = 25Ω, Peak IL = 38A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -ID38A di/dt ≤ 700A/µs VR ≤ 800 TJ ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.9
0.7
0.12
0.5
Note:
0.08
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-7063 Rev C
7-2004
0.20
0.16
0.3
0.04
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
0.05
0
10-5
t1
t2
SINGLE PULSE
0.1
10-4
10-3
°C/W
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
APT8020B2LL_LLL
100
0.0271
Power
(watts)
0.0656
0.0860
0.00899F
0.0202F
0.293F
ID, DRAIN CURRENT (AMPERES)
RC MODEL
Junction
temp. (°C)
8V
VGS =15 &10 V
80
7V
60
6.5V
40
6V
20
5.5V
Case temperature. (°C)
5V
80
60
TJ = +125°C
40
TJ = -55°C
TJ = +25°C
20
0
0
2
4
6
8
10
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
35
30
25
20
15
10
5
0
25
I
D
V
D
1.20
VGS=10V
1.10
1.00
VGS=20V
0.90
0.80
0
10
20
30
40
50 60 70
80
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.10
1.05
1.00
0.95
0.90
-50
-25
0
25
50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
= 19A
GS
= 10V
2.0
1.5
1.0
0.5
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
2.5
NORMALIZED TO
= 10V @ I = 19A
GS
1.30
1.15
40
0.0
-50
V
1.1
1.0
0.9
0.8
7-2004
100
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.40
0.7
0.6
-50
-25
0
25
50
75 100 125 150
TC, CASE TEMPERATURE (°C)
050-7063 Rev C
ID, DRAIN CURRENT (AMPERES)
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
120
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
0
152
10,000
Ciss
100µS
10
1mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
C, CAPACITANCE (pF)
50
1
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
OPERATION HERE
LIMITED BY RDS (ON)
16
D
= 38A
12
VDS=160V
8
VDS=400V
VDS=640V
4
0
50
100
150
200
250
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
Crss
100
0
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
180
TJ =+150°C
TJ =+25°C
10
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
V
G
V
120
DD
R
G
J
L = 100µH
tf
= 533V
= 5Ω
T = 125°C
J
100
= 5Ω
T = 125°C
80
140
= 533V
DD
R
tr and tf (ns)
td(on) and td(off) (ns)
100
td(off)
160
L = 100µH
80
60
40
tr
60
40
20
td(on)
20
0
10
20
30
40
50
ID (A)
FIGURE 14, DELAY TIMES vs CURRENT
V
DD
R
G
2000
0
10
60
40
50
60
ID (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
6000
= 533V
DD
I
J
E ON includes
diode reverse recovery.
1500
Eoff
Eon
1000
500
20
D
5000
T = 125°C
L = 100µH
0
10
20
V
= 5Ω
SWITCHING ENERGY (µJ)
2500
SWITCHING ENERGY (µJ)
200
100
200
7-2004
Coss
10mS
1
10
100
800
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
I
1,000
IDR, REVERSE DRAIN CURRENT (AMPERES)
ID, DRAIN CURRENT (AMPERES)
100
050-7063 Rev C
APT8020B2LL_LLL
20,000
30
40
50
60
ID (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
30
= 533V
= 38A
T = 125°C
J
L = 100µH
EON includes
4000
Eoff
diode reverse recovery.
3000
Eon
2000
1000
0
0
5
10 15 20 25 30 35 40 45 50
RG, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
APT8020B2LL_LLL
90%
Gate Voltage
10%
Gate Voltage
TJ125°C
T 125°C
J
td(off)
td(on)
tr
Drain Voltage
90%
Drain Current
tf
90%
10%
0
5%
5%
Drain Voltage
10%
Drain Current
Switching Energy
Switching Energy
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT30DF100
ID
V DD
V DS
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
T-MAXTM (B2) Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
TO-264 (L) Package Outline
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
15.49 (.610)
16.26 (.640)
19.51 (.768)
20.50 (.807)
3.10 (.122)
3.48 (.137)
5.38 (.212)
6.20 (.244)
5.79 (.228)
6.20 (.244)
0.40 (.016)
0.79 (.031)
2.21 (.087)
2.59 (.102)
19.81 (.780)
20.32 (.800)
2.87 (.113)
3.12 (.123)
2.29 (.090)
2.69 (.106)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
19.81 (.780)
21.39 (.842)
Gate
Drain
Source
5.45 (.215) BSC
2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
2.29 (.090)
2.69 (.106)
Gate
Drain
Source
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
7-2004
4.50 (.177) Max.
25.48 (1.003)
26.49 (1.043)
050-7063 Rev C
Drain
Drain
20.80 (.819)
21.46 (.845)