BF991 N-channel dual-gate MOS-FET Rev. 03 — 20 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. http://www.philips.semiconductors.com use http://www.nxp.com http://www.semiconductors.philips.com use http://www.nxp.com (Internet) [email protected] use [email protected] (email) The copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) - © Koninklijke Philips Electronics N.V. (year). All rights reserved is replaced with: - © NXP B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or phone (details via [email protected]). Thank you for your cooperation and understanding, NXP Semiconductors NXP Semiconductors Product specification N-channel dual-gate MOS-FET BF991 FEATURES DESCRIPTION • Protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. Depletion type field-effect transistor in a plastic SOT143 microminiature package with interconnected source and substrate. APPLICATIONS • VHF applications such as: d handbook, halfpage 4 3 – VHF television tuners and FM tuners g2 – Professional communication equipment. g1 PINNING PIN SYMBOL DESCRIPTION 1 s, b 2 d drain 3 g2 gate 2 4 g1 gate 1 1 2 s,b source Top view MAM039 Marking code: %MA. Fig.1 Simplified outline (SOT143) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VDS drain-source voltage − 20 V ID drain current − 20 mA Ptot total power dissipation − 200 mW Tj junction temperature − 150 °C up to Tamb = 60 °C 14 − mS Cig1-s input capacitance at gate 1 f = 1 MHz; ID = 10 mA; VDS = 10 V; VG2-S = 4 V 2.1 − pF Crs feedback capacitance f = 1 MHz; ID = 10 mA; VDS = 10 V; VG2-S = 4 V 20 − fF F noise figure f = 200 MHz; GS = 2 mS; BS = BSopt; ID = 10 mA; VDS = 10 V; VG2-S = 4 V 2 dB Y fs transfer admittance f = 1 kHz; ID = 10 mA; VDS = 10 V; VG2-S = 4 V Rev. 03 - 20 November 2007 1 2 of 7 NXP Semiconductors Product specification N-channel dual-gate MOS-FET BF991 LIMITING VALUES In according with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − 20 V ID drain current (DC) − 20 mA ID(AV) average drain current − 20 mA IG1-S gate 1-source current − ±10 mA IG2-S gate 2-source current − ±10 mA Ptot total power dissipation − 200 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C up to Tamb = 60 °C; note 1 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS thermal resistance from junction to ambient Rth j-a in free air; note 1 VALUE UNIT 460 K/W Note to the Limiting values and the Thermal characteristics 1. Device mounted on a ceramic substrate of 8 × 10 × 0.7 mm. MGE792 200 handbook, halfpage Ptot (mW) 100 0 0 100 Tamb (°C) 200 Fig.2 Power derating curve. Rev. 03 - 20 November 2007 3 of 7 NXP Semiconductors Product specification N-channel dual-gate MOS-FET BF991 STATIC CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. − MAX. UNIT IG1-SS gate 1 cut-off current IG2-SS gate 2 cut-off current VG2-S = 5 V; VG1-S = VDS = 0 − 50 nA IDSS drain current VDS = 10 V; VG1-S = 0; VG2-S = 4 V 4 25 mA V(BR)G1-SS gate 1-source breakdown voltage IG1-SS = 10 mA; VG2-S = VDS = 0 6 20 V V(BR)G2-SS gate 2-source breakdown voltage IG2-SS = 10 mA; VG1-S = VDS = 0 6 20 V V(P)G1-S gate 1-source cut-off voltage ID = 20 µA; VDS = 10 V; VG2-S = 4 V − −2.5 V V(P)G2-S gate 2-source cut-off voltage ID = 20 µA; VDS = 10 V; VG1-S = 0 − −2.5 V VG1-S = 5 V; VG2-S = VDS = 0 50 nA DYNAMIC CHARACTERISTICS Measuring conditions (common source): ID = 10 mA; VDS = 10 V; VG2-S = 4 V; Tamb = 25 °C. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT transfer admittance f = 1 kHz 10 14 − mS Cig1-s input capacitance at gate 1 f = 1 MHz − 2.1 − pF Cig2-s input capacitance at gate 2 f = 1 MHz − 1 − pF Crs feedback capacitance f = 1 MHz − 20 − fF Cos output capacitance f = 1 MHz − 1.1 − pF F noise figure f = 100 MHz; GS = 1 mS; BS = BSopt − 0.7 1.7 dB f = 200 MHz; GS = 2 mS; BS = BSopt − 1 2 dB f = 100 MHz; GS = 1 mS; BS = BSopt; GL = 0.5 mS; BL = BLopt − 29 − dB f = 200 MHz; GS = 2 mS; BS = BSopt; GL = 0.5 mS; BL = BLopt − 26 − dB Y fs Gtr transducer gain; note 1 Note 1. Crystal mounted in a SOT103 package. Rev. 03 - 20 November 2007 4 of 7 NXP Semiconductors Product specification N-channel dual-gate MOS-FET BF991 PACKAGE OUTLINE handbook, full pagewidth 3.0 2.8 0.150 0.090 0.75 0.60 B 1.9 4 3 0.1 max o 10 max 0.2 M A B A 1.4 1.2 2.5 max o 10 max 1 1.1 max o 30 max 0.88 2 0 0.1 0.48 0 0.1 0.1 M A B MBC845 1.7 TOP VIEW Dimensions in mm. See also Soldering recommendations. Fig.3 SOT143. Rev. 03 - 20 November 2007 5 of 7 BF991 NXP Semiconductors N-channel dual-gate MOS-FET Legal information Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. Definitions Draft — The document is a draft version only. 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Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: [email protected] Rev. 03 - 20 November 2007 6 of 7 BF991 NXP Semiconductors N-channel dual-gate MOS-FET Revision history Revision history Document ID Release date Data sheet status Change notice Supersedes BF991_N_3 20071120 Product data sheet - BF991_2 • Modifications: Fig. 1 on page 2; Figure note changed BF991_2 19910401 Product specification - BF991_SF_1 BF991_SF_1 - - - - Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2007. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 20 November 2007 Document identifier: BF991_N_3