SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTORS BCW60 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). Collector-Emitter Breakdown Voltage V(BR)CEO Emitter-Base Breakdown Voltage V(BR)EBO Collector-Emitter Cut-off Current ICES 20 20 µA nA VCES =32V VCES =32V ,Tamb=150oC Emitter-Base Cut-Off Current IEBO 20 nA VEBO =4V Collector-Emitter Saturation Voltage VCE(sat) 0.12 0.20 0.35 0.55 V V IC=10mA, IB = 0.25mA IC= 50mA, IB =1.25mA PARAMETER SYMBOL Base-Emitter Saturation Voltage VBE(SAT) 0.60 0.70 0.70 0.83 0.85 1.05 V V IC=10mA, IB=0.25mA IC =50mA, IB=1.25mA Collector-Base Voltage Collector-Emitter Voltage Base - Emitter Voltage VBE 0.55 0.52 0.65 0.78 0.75 V V V IC=10µA, VCE =5V IC=2mA, VCE =5V IC=50mA, VCE =1V BCW60D Transition Frequency fT Emitter-Base Capacitance Cebo Collector-Base Capacitance Ccbo Noise Figure N Switching times: Delay Time Rise Time Turn-on Time Storage Time Fall Time Turn-Off Time td tr ton ts tf toff CONDITIONS. 32 V IC=2mA 5 V IEBO =1µA CR DR AR BR MIN. BCW60C UNIT BCW60AR BCW60BR BCW60CR BCW60DR SYMBOL hFE 120 50 78 170 20 180 70 145 250 40 250 90 220 350 100 380 100 300 500 125 250 MAX. BCW60 PARAMETER Static BCW60A Forward Current Transfer BCW60B Ratio TYP. ISSUE 2 AUGUST 1995 PARTMARKING DETAILS BCW60A AA BCW60B AB BCW60C AC BCW60D AD 220 IC=10µA, VCE =5V IC=2mA, VCE =5V IC=50mA, VCE =1V 310 IC=10µA, VCE =5V IC=2mA, VCE =5V IC=50mA, VCE =1V 460 IC=10µA, VCE =5V IC=2mA, VCE =5V IC=50mA, VCE =1V 630 IC=10µA, VCE =5V IC=2mA, VCE =5V IC=50mA, VCE =1V 8 2 35 50 85 400 80 480 MHz IC =10mA, VCE =5V f = 100MHz pF VEBO=0.5V, f =1MHz 4.5 pF VCBO=10V, f =1MHz 6 dB IC= 0.2mA, VCE = 5V RG =2KΩ, f=1KH ∆f=200Hz 150 800 *Measured under pulsed conditions. Pulse width=300µs. Duty cycle Spice parameter data is available upon request for this device ns ns ns ns ns ns IC:IB1:- IB2 =10:1:1mA R1=5KΩ, R2=5KΩ VBB =3.6V, RL=990Ω E C B COMPLEMENTARY TYPE BCW61 SOT23 ABSOLUTE MAXIMUM RATINGS. VALUE UNIT VCBO 32 V VCEO 32 V Emitter-Base Voltage VEBO 5 V Continuous Collector Current IC 200 mA Base Current IB 50 mA Power Dissipation at Tamb=25°C PTOT 330 mW Operating and Storage Temperature Range tj:tstg -55 to +150 °C FOUR TERMINAL NETWORK DATA (Ic=2mA, VCE=5V, f=1kHz) hFE Group A h11e hFE Group B hFE Group C hFE Group D Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. 1.6 2.7 4.5 2.5 3.6 6.0 3.2 4.5 8.5 4.5 7.5 12 h12e 1.5 2 2 3 h21e 200 260 330 520 h22e 18 30 24 50 30 60 50 SWITCHING CIRCUIT -VBB R2 VCC(+10V) RL 1µsec R1 +10V tr < 5nsec Mark/Space ratio < 0.01 Zs=50Ω 50Ω PAGE NO tr < 5nsec Zin ≥ 100kΩ Oscilloscope kΩ 10-4 100 µS SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTORS BCW60 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). Collector-Emitter Breakdown Voltage V(BR)CEO Emitter-Base Breakdown Voltage V(BR)EBO Collector-Emitter Cut-off Current ICES 20 20 µA nA VCES =32V VCES =32V ,Tamb=150oC Emitter-Base Cut-Off Current IEBO 20 nA VEBO =4V Collector-Emitter Saturation Voltage VCE(sat) 0.12 0.20 0.35 0.55 V V IC=10mA, IB = 0.25mA IC= 50mA, IB =1.25mA PARAMETER SYMBOL Base-Emitter Saturation Voltage VBE(SAT) 0.60 0.70 0.70 0.83 0.85 1.05 V V IC=10mA, IB=0.25mA IC =50mA, IB=1.25mA Collector-Base Voltage Collector-Emitter Voltage Base - Emitter Voltage VBE 0.55 0.52 0.65 0.78 0.75 V V V IC=10µA, VCE =5V IC=2mA, VCE =5V IC=50mA, VCE =1V BCW60D Transition Frequency fT Emitter-Base Capacitance Cebo Collector-Base Capacitance Ccbo Noise Figure N Switching times: Delay Time Rise Time Turn-on Time Storage Time Fall Time Turn-Off Time td tr ton ts tf toff CONDITIONS. 32 V IC=2mA 5 V IEBO =1µA CR DR AR BR MIN. BCW60C UNIT BCW60AR BCW60BR BCW60CR BCW60DR SYMBOL hFE 120 50 78 170 20 180 70 145 250 40 250 90 220 350 100 380 100 300 500 125 250 MAX. BCW60 PARAMETER Static BCW60A Forward Current Transfer BCW60B Ratio TYP. ISSUE 2 AUGUST 1995 PARTMARKING DETAILS BCW60A AA BCW60B AB BCW60C AC BCW60D AD 220 IC=10µA, VCE =5V IC=2mA, VCE =5V IC=50mA, VCE =1V 310 IC=10µA, VCE =5V IC=2mA, VCE =5V IC=50mA, VCE =1V 460 IC=10µA, VCE =5V IC=2mA, VCE =5V IC=50mA, VCE =1V 630 IC=10µA, VCE =5V IC=2mA, VCE =5V IC=50mA, VCE =1V 8 2 35 50 85 400 80 480 MHz IC =10mA, VCE =5V f = 100MHz pF VEBO=0.5V, f =1MHz 4.5 pF VCBO=10V, f =1MHz 6 dB IC= 0.2mA, VCE = 5V RG =2KΩ, f=1KH ∆f=200Hz 150 800 *Measured under pulsed conditions. Pulse width=300µs. Duty cycle Spice parameter data is available upon request for this device ns ns ns ns ns ns IC:IB1:- IB2 =10:1:1mA R1=5KΩ, R2=5KΩ VBB =3.6V, RL=990Ω E C B COMPLEMENTARY TYPE BCW61 SOT23 ABSOLUTE MAXIMUM RATINGS. VALUE UNIT VCBO 32 V VCEO 32 V Emitter-Base Voltage VEBO 5 V Continuous Collector Current IC 200 mA Base Current IB 50 mA Power Dissipation at Tamb=25°C PTOT 330 mW Operating and Storage Temperature Range tj:tstg -55 to +150 °C FOUR TERMINAL NETWORK DATA (Ic=2mA, VCE=5V, f=1kHz) hFE Group A h11e hFE Group B hFE Group C hFE Group D Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. 1.6 2.7 4.5 2.5 3.6 6.0 3.2 4.5 8.5 4.5 7.5 12 h12e 1.5 2 2 3 h21e 200 260 330 520 h22e 18 30 24 50 30 60 50 SWITCHING CIRCUIT -VBB R2 VCC(+10V) RL 1µsec R1 +10V tr < 5nsec Mark/Space ratio < 0.01 Zs=50Ω 50Ω PAGE NO tr < 5nsec Zin ≥ 100kΩ Oscilloscope kΩ 10-4 100 µS