Zetex BCW60D Sot23 npn silicon planar small signal transistor Datasheet

SOT23 NPN SILICON PLANAR
SMALL SIGNAL TRANSISTORS
BCW60
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
Collector-Emitter
Breakdown Voltage
V(BR)CEO
Emitter-Base Breakdown
Voltage
V(BR)EBO
Collector-Emitter
Cut-off Current
ICES
20
20
µA
nA
VCES =32V
VCES =32V ,Tamb=150oC
Emitter-Base Cut-Off Current
IEBO
20
nA
VEBO =4V
Collector-Emitter Saturation
Voltage
VCE(sat)
0.12
0.20
0.35
0.55
V
V
IC=10mA, IB = 0.25mA
IC= 50mA, IB =1.25mA
PARAMETER
SYMBOL
Base-Emitter
Saturation Voltage
VBE(SAT)
0.60
0.70
0.70
0.83
0.85
1.05
V
V
IC=10mA, IB=0.25mA
IC =50mA, IB=1.25mA
Collector-Base Voltage
Collector-Emitter Voltage
Base - Emitter Voltage
VBE
0.55
0.52
0.65
0.78
0.75
V
V
V
IC=10µA, VCE =5V
IC=2mA, VCE =5V
IC=50mA, VCE =1V
BCW60D
Transition Frequency
fT
Emitter-Base Capacitance
Cebo
Collector-Base Capacitance
Ccbo
Noise Figure
N
Switching times:
Delay Time
Rise Time
Turn-on Time
Storage Time
Fall Time
Turn-Off Time
td
tr
ton
ts
tf
toff
CONDITIONS.
32
V
IC=2mA
5
V
IEBO =1µA
CR
DR
AR
BR
MIN.
BCW60C
UNIT
BCW60AR –
BCW60BR –
BCW60CR –
BCW60DR –
SYMBOL
hFE
120
50
78
170
20
180
70
145
250
40
250
90
220
350
100
380
100
300
500
125
250
MAX.
BCW60
PARAMETER
Static BCW60A
Forward
Current
Transfer BCW60B
Ratio
TYP.
ISSUE 2 – AUGUST 1995
PARTMARKING DETAILS
BCW60A – AA
BCW60B – AB
BCW60C – AC
BCW60D – AD
220
IC=10µA, VCE =5V
IC=2mA, VCE =5V
IC=50mA, VCE =1V
310
IC=10µA, VCE =5V
IC=2mA, VCE =5V
IC=50mA, VCE =1V
460
IC=10µA, VCE =5V
IC=2mA, VCE =5V
IC=50mA, VCE =1V
630
IC=10µA, VCE =5V
IC=2mA, VCE =5V
IC=50mA, VCE =1V
8
2
35
50
85
400
80
480
MHz
IC =10mA, VCE =5V
f = 100MHz
pF
VEBO=0.5V, f =1MHz
4.5
pF
VCBO=10V, f =1MHz
6
dB
IC= 0.2mA, VCE = 5V
RG =2KΩ, f=1KH
∆f=200Hz
150
800
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle
Spice parameter data is available upon request for this device
ns
ns
ns
ns
ns
ns
IC:IB1:- IB2 =10:1:1mA
R1=5KΩ, R2=5KΩ
VBB =3.6V, RL=990Ω
E
C
B
COMPLEMENTARY TYPE
BCW61
SOT23
ABSOLUTE MAXIMUM RATINGS.
VALUE
UNIT
VCBO
32
V
VCEO
32
V
Emitter-Base Voltage
VEBO
5
V
Continuous Collector Current
IC
200
mA
Base Current
IB
50
mA
Power Dissipation at Tamb=25°C
PTOT
330
mW
Operating and Storage Temperature Range
tj:tstg
-55 to +150
°C
FOUR TERMINAL NETWORK DATA (Ic=2mA, VCE=5V, f=1kHz)
hFE Group A
h11e
hFE Group B
hFE Group C
hFE Group D
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
1.6
2.7
4.5
2.5
3.6
6.0
3.2
4.5
8.5
4.5
7.5
12
h12e
1.5
2
2
3
h21e
200
260
330
520
h22e
18
30
24
50
30
60
50
SWITCHING CIRCUIT
-VBB
R2
VCC(+10V)
RL
1µsec
R1
+10V
tr < 5nsec
Mark/Space ratio < 0.01
Zs=50Ω
50Ω
PAGE NO
tr < 5nsec
Zin ≥ 100kΩ
Oscilloscope
kΩ
10-4
100
µS
SOT23 NPN SILICON PLANAR
SMALL SIGNAL TRANSISTORS
BCW60
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
Collector-Emitter
Breakdown Voltage
V(BR)CEO
Emitter-Base Breakdown
Voltage
V(BR)EBO
Collector-Emitter
Cut-off Current
ICES
20
20
µA
nA
VCES =32V
VCES =32V ,Tamb=150oC
Emitter-Base Cut-Off Current
IEBO
20
nA
VEBO =4V
Collector-Emitter Saturation
Voltage
VCE(sat)
0.12
0.20
0.35
0.55
V
V
IC=10mA, IB = 0.25mA
IC= 50mA, IB =1.25mA
PARAMETER
SYMBOL
Base-Emitter
Saturation Voltage
VBE(SAT)
0.60
0.70
0.70
0.83
0.85
1.05
V
V
IC=10mA, IB=0.25mA
IC =50mA, IB=1.25mA
Collector-Base Voltage
Collector-Emitter Voltage
Base - Emitter Voltage
VBE
0.55
0.52
0.65
0.78
0.75
V
V
V
IC=10µA, VCE =5V
IC=2mA, VCE =5V
IC=50mA, VCE =1V
BCW60D
Transition Frequency
fT
Emitter-Base Capacitance
Cebo
Collector-Base Capacitance
Ccbo
Noise Figure
N
Switching times:
Delay Time
Rise Time
Turn-on Time
Storage Time
Fall Time
Turn-Off Time
td
tr
ton
ts
tf
toff
CONDITIONS.
32
V
IC=2mA
5
V
IEBO =1µA
CR
DR
AR
BR
MIN.
BCW60C
UNIT
BCW60AR –
BCW60BR –
BCW60CR –
BCW60DR –
SYMBOL
hFE
120
50
78
170
20
180
70
145
250
40
250
90
220
350
100
380
100
300
500
125
250
MAX.
BCW60
PARAMETER
Static BCW60A
Forward
Current
Transfer BCW60B
Ratio
TYP.
ISSUE 2 – AUGUST 1995
PARTMARKING DETAILS
BCW60A – AA
BCW60B – AB
BCW60C – AC
BCW60D – AD
220
IC=10µA, VCE =5V
IC=2mA, VCE =5V
IC=50mA, VCE =1V
310
IC=10µA, VCE =5V
IC=2mA, VCE =5V
IC=50mA, VCE =1V
460
IC=10µA, VCE =5V
IC=2mA, VCE =5V
IC=50mA, VCE =1V
630
IC=10µA, VCE =5V
IC=2mA, VCE =5V
IC=50mA, VCE =1V
8
2
35
50
85
400
80
480
MHz
IC =10mA, VCE =5V
f = 100MHz
pF
VEBO=0.5V, f =1MHz
4.5
pF
VCBO=10V, f =1MHz
6
dB
IC= 0.2mA, VCE = 5V
RG =2KΩ, f=1KH
∆f=200Hz
150
800
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle
Spice parameter data is available upon request for this device
ns
ns
ns
ns
ns
ns
IC:IB1:- IB2 =10:1:1mA
R1=5KΩ, R2=5KΩ
VBB =3.6V, RL=990Ω
E
C
B
COMPLEMENTARY TYPE
BCW61
SOT23
ABSOLUTE MAXIMUM RATINGS.
VALUE
UNIT
VCBO
32
V
VCEO
32
V
Emitter-Base Voltage
VEBO
5
V
Continuous Collector Current
IC
200
mA
Base Current
IB
50
mA
Power Dissipation at Tamb=25°C
PTOT
330
mW
Operating and Storage Temperature Range
tj:tstg
-55 to +150
°C
FOUR TERMINAL NETWORK DATA (Ic=2mA, VCE=5V, f=1kHz)
hFE Group A
h11e
hFE Group B
hFE Group C
hFE Group D
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
1.6
2.7
4.5
2.5
3.6
6.0
3.2
4.5
8.5
4.5
7.5
12
h12e
1.5
2
2
3
h21e
200
260
330
520
h22e
18
30
24
50
30
60
50
SWITCHING CIRCUIT
-VBB
R2
VCC(+10V)
RL
1µsec
R1
+10V
tr < 5nsec
Mark/Space ratio < 0.01
Zs=50Ω
50Ω
PAGE NO
tr < 5nsec
Zin ≥ 100kΩ
Oscilloscope
kΩ
10-4
100
µS
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