isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BUX18/A/B/C DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 200V(Min)- BUX18 = 325V(Min)- BUX18A = 375V(Min)- BUX18B = 425V(Min)- BUX18C ·High Switching Speed ·High Power Dissipation APPLICATIONS ·Designed for use in off-line power supplies and is also well suited for use in a wide range of inverter or converter circuits and pulse-width-modulated regulators. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCEV VCEO(SUS) VEBO PARAMETER Collector-Emitter Voltage VBE= -1.5V VALUE BUX18 250 BUX18A 350 BUX18B 400 BUX18C 475 BUX18 200 BUX18A 325 BUX18B 375 BUX18C 425 UNIT V Collector-Emitter Voltage V Emitter-Base Voltage 6 V IC Collector Current-Continuous 8 A PC Collector Power Dissipation@TC=25℃ 120 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case isc website：www.iscsemi.cn MAX UNIT 1.17 ℃/W 1 isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BUX18/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)EBO VCE(sat) VBE(on) ICEV IEBO Collector-Emitter Sustaining Voltage BUX18A Base-Emitter On Voltage Collector Cutoff Current V BUX18B 375 BUX18C 425 IE= 1mA ; IC= 0 6 DC Current Gain V BUX18 IC= 6A; IB= 1.2A BUX18A IC= 5A; IB= 1A BUX18B/C IC= 4A; IB= 0.8A BUX18 IC= 6A; VCE= 3V BUX18A/B/C IC= 4A; VCE= 3V BUX18 VCE= 250V;VBE= -1.5V VCE= 250V;VBE= -1.5V,TC= 150℃ 3 10 BUX18A VCE= 350V;VBE= -1.5V VCE= 350V;VBE= -1.5V,TC= 150℃ 3 10 BUX18B VCE= 400V;VBE= -1.5V VCE= 400V;VBE= -1.5V,TC= 150℃ 3 5 BUX18C VCE= 475V;VBE= -1.5V VCE= 475V;VBE= -1.5V,TC= 150℃ 3 5 Emitter Cutoff Current VEB= 6V; IC=0 BUX18 IC= 6A; VCE= 3V BUX18A IC= 5A; VCE= 3V BUX18B/C IC= 4A; VCE= 3V isc website：www.iscsemi.cn UNIT 325 2 2.5 V 1.5 V 1.0 7 hFE MAX IC= 200mA ; IB= 0 Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage TYP. 200 BUX18 VCEO(SUS) MIN 10 mA mA