CMDD6001 SURFACE MOUNT ULTRA LOW LEAKAGE SILICON SWITCHING DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMDD6001 type is a silicon switching diode manufactured by the epitaxial planar process, epoxy molded in a SUPERminiTM surface mount package, designed for switching applications requiring a extremely low leakage diode. MARKING CODE: C61 SOD-323 CASE MAXIMUM RATINGS: (TA=25°C) Continuous Reverse Voltage Peak Repetitive Reverse Voltage Continuous Forward Current Peak Repetitive Forward Current Peak Forward Surge Current, tp=1.0μs Peak Forward Surge Current, tp=1.0s Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VR VRRM 100 V IF 250 mA IFRM IFSM 250 mA 4.0 A IFSM PD TJ, Tstg ΘJA ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN IR VR=75V 75 UNITS V 1.0 A 250 mW -65 to +150 °C 500 °C/W MAX 500 UNITS pA BVR IR=100μA VF IF=1.0mA 0.85 V VF IF=10mA 0.95 V VF IF=100mA 1.1 V CT VR=0, f=1.0MHz IR=IF=10mA, Irr=1.0mA, RL=100Ω 2.0 pF 3.0 μs trr 100 V R5 (9-May 2011) CMDD6001 SURFACE MOUNT ULTRA LOW LEAKAGE SILICON SWITCHING DIODE SOD-323 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Cathode 2) Anode MARKING CODE: C61 R5 (9-May 2011) w w w. c e n t r a l s e m i . c o m