STMicroelectronics BULB49D High voltage fast-switching npn power transistor Datasheet

BULB49DT4
High voltage fast-switching NPN power transistor
General features
■
High voltage capability
■
Low spread of dynamic parameters
■
Minimum lot-to-lot spread for reliable operation
■
Very high switching speed
■
High ruggedness
■
■
Surface mounting TO-263 (D2PAK) power
package
1
3
TO-263
D2PAK
In compliance with the 2002/93/EC European
Directive
Description
The device is manufactured using high voltage
Multi-Epitaxial Planar technology for high
switching speeds and high voltage capability.
Internal schematic diagrams
The device is designed for use in electronic
transformer for halogen lamps.
Applications
■
Electronic transformers for halogen lamps
■
Flyback and forward single transistor low
power converters
Order codes
Part Number
Marking
Package
Packing
BULB49DT4
BULB49D
D 2PAK
Tape & reel
July 2006
Rev 2
1/11
www.st.com
11
BULB49DT4
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.2
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
2/11
BULB49DT4
1
Electrical ratings
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VCES
Collector-emitter voltage (V BE =0)
850
V
VCEO
Collector-emitter voltage (IB =0)
450
V
VEBO
Emitter-base voltage (IC =0, IB <2A, tP < 10ms)
V(BR)EBO
V
Collector current
5
A
Collector peak current (tP < 5ms)
10
A
Base current
2
A
IBM
Base peak current (tP < 5ms)
4
A
Ptot
Total dissipation at T c ≤ 25°C
80
W
Tstg
Storage temperature
-65 to 150
°C
150
°C
Value
Unit
1.56
62.5
°C/W
°C/W
IC
ICM
IB
TJ
Table 2.
Symbol
Rthj-case
Rthj-amb
Max. operating junction temperature
Thermal data
Parameter
Thermal resistance junction-case
Thermal resistance junction-ambient
__max
__max
3/11
Electrical characteristics
2
BULB49DT4
Electrical characteristics
(Tcase = 25°C unless otherwise specified)
Table 3.
Symbol
Electrical characteristics
Parameter
Test Conditions
Collector cut-off current
(VBE =0)
IEBO
Emitter cut-off current
(IC =0)
VEB = 9V
Emitter-base brakdown
voltage (IC = 0)
IE =10mA
10
Collector-emitter
VCEO(sus)(1) sustaining voltage (I = 0) IC =10mA
B
450
VCE(sat) (1)
VBE(sat) (1)
hFE
(1)
VCEW
ts
tf
ts
tf
VF
(1)
Collector-emitter
saturation voltage
VCE = 850V
IC =1A
Tj = 125°C
IC =2A
_ _ IB =0.2A
_ _ IB =0.4A
IC =4A
IC =1A
Unit
100
500
µA
µA
100
µA
18
V
V
__ _ IB =0.8A
V
V
V
_ _ IB =0.2A
_ _ IB =0.8A
1
1.3
V
V
IC =4A
IC =10mA
V CE =5V
DC current gain
IC =500mA
V CE =5V
IC =7A
VCE =10V
Resistive load
Storage time
Fall time
Max.
0.3
0.6
1.2
Base-emitter saturation
voltage
Maximum collectoremitter voltage without
snubber
Typ.
VCE = 850V
ICES
V(BR)EBO
IC =8A
VBB= -2.5V
L =50µH
R BB =0
0.1
10
60
4
10
450
V
tp =10µs
VCC =250V
IC =2A
IB1=-IB2 =400mA
tp =30µs
3
µs
0.8
µs
0.5
1.3
µs
50
100
ns
1.5
V
2
(see figure 11)
Inductive load
Storage time
Fall time
VCL =300V
IC =4A
IB(on) =800mA
RBB(off) =0
VBE(off) =-5V
L =1mH
Diode forward voltage
IC = 3A
(see figure 12)
Note (1) Pulsed duration = 300 µs, duty cycle ≤1.5%
4/11
Min.
BULB49DT4
2.1
Electrical characteristics
Electrical characteristics (curves)
Figure 1.
Safe operating area
Figure 2.
Derating current
Figure 3.
Output characteristics
Figure 4.
Collector-emitter saturation
voltage
Figure 5.
Base-emitter saturation
voltage
Figure 6.
DC current gain
5/11
Electrical characteristics
6/11
BULB49DT4
Figure 7.
DC current gain
Figure 8.
Inductive load storage time
Figure 9.
Inductive load fall time
Figure 10. Reverse biased safe
operating area
BULB49DT4
2.2
Electrical characteristics
Test circuits
Figure 11. Resistive load switching test circuit
1) Fast electronic switch
2) Non-inductive resistor
Figure 12. Inductive load switching test circuit
1) Fast electronic switch
2) Non-inductive resistor
3) Fast recovery rectifier
7/11
Package mechanical data
3
BULB49DT4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
8/11
BULB49DT4
Package mechanical data
TO-263 (D2PAK) MECHANICAL DATA
DIM.
mm
MIN.
TYP.
inch
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
A1
2.49
2.69
0.098
0.106
A2
0.03
0.23
0.001
0.009
B
0.70
0.93
0.027
0.036
B2
1.14
1.70
0.044
0.067
C
0.45
0.60
0.017
0.023
C2
1.23
1.36
0.048
0.053
D
8.95
9.35
0.352
D1
E
8.00
10.00
E1
0.368
0.315
10.40
0.393
8.50
0.409
0.334
G
4.88
5.28
0.192
0.208
L
15.00
15.85
0.590
0.624
L2
1.27
1.4
0.050
0.055
L3
1.40
1.75
0.055
0.068
M
2.40
3.2
0.094
R
V2
0.40
0o
- Weight : 1.38 g (typ.)
- The planaty of the slug must be within 30 µm
0.126
0.016
8o
0o
8o
P011P6/G
9/11
Revision history
4
BULB49DT4
Revision history
Table 4.
10/11
Revision history
Date
Revision
Changes
10-Sep-2003
1
First release.
21-Jul-2006
2
New template
BULB49DT4
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