Silizium-PIN-Fotodiode; in SMT und als Reverse Gullwing Silicon PIN Photodiode; in SMT and as Reverse Gullwing BPW 34, BPW 34 S, BPW 34 S (E9087) BPW 34 BPW 34 S BPW 34 S (E9087) Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 400 nm bis 1100 nm • Kurze Schaltzeit (typ. 20 ns) • DIL-Plastikbauform mit hoher Packungsdichte • BPW 34 S/(E9087): geeignet für Vapor-Phase Löten und IR-Reflow Löten (JEDEC level 4) • Especially suitable for applications from 400 nm to 1100 nm • Short switching time (typ. 20 ns) • DIL plastic package with high packing density • BPW 34 S/(E9087): suitable for vapor-phase and IR-reflow soldering (JEDEC level 4) Anwendungen Applications • Lichtschranken für Gleich- und Wechsellichtbetrieb • IR-Fernsteuerungen • Industrieelektronik • „Messen/Steuern/Regeln“ • • • • Typ Type Bestellnummer Ordering Code BPW 34 Q62702-P73 BPW 34 S Q62702-P1602 BPW 34 S (E9087) Q62702-P1790 2003-02-04 1 Photointerrupters IR remote controls Industrial electronics For control and drive circuits BPW 34, BPW 34 S, BPW 34 S (E9087) Grenzwerte Maximum Ratings Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit BPW 34 S BPW 34 BPW 34 S (E9087) °C Betriebs- und Lagertemperatur Operating and storage temperature range Top; Tstg Sperrspannung Reverse voltage VR 32 V Verlustleistung, TA = 25 °C Total power dissipation Ptot 150 mW – 40 … + 100 – 40 … + 85 Kennwerte (TA = 25 °C, Normlicht A, T = 2856 K) Characteristics (TA = 25 °C, standard light A, T = 2856 K) Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Fotoempfindlichkeit, VR = 5 V Spectral sensitivity S 80 (≥ 50) nA/Ix Wellenlänge der max. Fotoempfindlichkeit Wavelength of max. sensitivity λS max2003-02-04 850 nm Spektraler Bereich der Fotoempfindlichkeit S = 10% von Smax Spectral range of sensitivity S = 10% of Smax λ 400 … 1100 nm Bestrahlungsempfindliche Fläche Radiant sensitive area A 7.00 mm2 Abmessung der bestrahlungsempfindlichen Fläche Dimensions of radiant sensitive area L×B 2.65 × 2.65 mm × mm L×W Halbwinkel Half angle ϕ ± 60 Grad deg. Dunkelstrom, VR = 10 V Dark current IR 2 (≤ 30) nA Spektrale Fotoempfindlichkeit, λ = 850 nm Spectral sensitivity Sλ 0.62 A/W Quantenausbeute, λ = 850 nm Quantum yield η 0.90 Electrons Photon 2003-02-04 2 BPW 34, BPW 34 S, BPW 34 S (E9087) Kennwerte (TA = 25 °C, Normlicht A, T = 2856 K) Characteristics (TA = 25 °C, standard light A, T = 2856 K) (cont’d) Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Leerlaufspannung, Ev = 1000 Ix Open-circuit voltage VO 365 (≥ 300) mV Kurzschlußstrom, Ev = 1000 Ix Short-circuit current ISC 80 µA Anstiegs- und Abfallzeit des Fotostromes Rise and fall time of the photocurrent RL = 50 Ω; VR = 5 V; λ = 850 nm; Ip = 800 µA tr, tf 20 ns Durchlaßspannung, IF = 100 mA, E = 0 Forward voltage VF 1.3 V Kapazität, VR = 0 V, f = 1 MHz, E = 0 Capacitance C0 72 pF Temperaturkoeffizient von VO Temperature coefficient of VO TCV – 2.6 mV/K Temperaturkoeffizient von ISC Temperature coefficient of ISC TCI 0.18 %/K Rauschäquivalente Strahlungsleistung Noise equivalent power VR = 10 V, λ = 850 nm NEP 4.1 × 10– 14 Nachweisgrenze, VR = 10 V, λ = 850 nm Detection limit D* 6.6 × 1012 2003-02-04 3 W -----------Hz cm × Hz -------------------------W BPW 34, BPW 34 S, BPW 34 S (E9087) Photocurrent IP = f (Ev), VR = 5 V Open-Circuit Voltage VO = f (Ev) Relative Spectral Sensitivity Srel = f (λ) OHF00078 100 ΙP S rel % 80 OHF01066 10 3 µA 10 4 mV VO 10 2 10 3 VO OHF00958 160 mW Ptot 140 120 100 60 10 1 Total Power Dissipation Ptot = f (TA) 10 2 ΙP 40 80 60 10 0 10 1 -1 0 40 20 20 10 0 400 500 600 700 800 900 nm 1100 λ 10 0 Dark Current IR = f (VR), E = 0 10 10 3 lx 10 4 EV 10 2 Capacitance C = f (VR), f = 1 MHz, E = 0 OHF00080 4000 ΙR 10 1 C pA 0 20 40 60 80 ˚C 100 TA Dark Current IR = f (TA), VR = 10 V, E = 0 OHF00081 100 0 OHF00082 10 3 Ι R nA pF 80 10 2 3000 70 60 2000 10 1 50 40 30 10 0 1000 20 10 0 0 5 10 15 V VR 0 -2 10 20 10 -1 10 0 10 1 V 10 2 VR Directional Characteristics Srel = f (ϕ) 40 30 20 10 ϕ 0 OHF01402 1.0 50 0.8 60 0.6 70 0.4 80 0.2 0 90 100 1.0 2003-02-04 0.8 0.6 0.4 0 20 40 60 80 100 4 120 10 -1 0 20 40 60 80 ˚C 100 TA BPW 34, BPW 34 S, BPW 34 S (E9087) Maßzeichnung Package Outlines BPW 34 5.4 (0.213) 4.3 (0.169) Chip position 0.6 (0.024) 0.4 (0.016) 2.2 (0.087) 1.9 (0.075) 3.7 (0.146) 3.5 (0.138) 3.0 (0.118) 1.2 (0.047) 0.7 (0.028) 0.8 (0.031) 0.6 (0.024) 4.9 (0.193) 4.5 (0.177) 0.6 (0.024) 0.4 (0.016) Cathode marking 4.0 (0.157) 0.6 (0.024) 0.6 (0.024) 0.4 (0.016) 0.4 (0.016) 0.35 (0.014) 0.5 (0.020) 0.2 (0.008) 0.3 (0.012) 0.8 (0.031) 0.6 (0.024) 1.8 (0.071) 1.4 (0.055) 0 ... 5˚ 5.08 (0.200) spacing Photosensitive area 2.65 (0.104) x 2.65 (0.104) GEOY6643 BPW 34 S 0.3 (0.012) 1.1 (0.043) 0.9 (0.035) 6.7 (0.264) 6.2 (0.244) 4.5 (0.177) 4.3 (0.169) 0...5 ˚ 0.2 (0.008) 0.1 (0.004) 1.2 (0.047) 1.1 (0.043) 0...0.1 (0...0.004) Chip position 0.9 (0.035) 0.7 (0.028) 1.7 (0.067) 1.5 (0.059) 4.0 (0.157) 3.7 (0.146) 1.8 (0.071) ±0.2 (0.008) Photosensitive area Cathode lead 2.65 (0.104) x 2.65 (0.104) GEOY6863 Maße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch). 2003-02-04 5 BPW 34, BPW 34 S, BPW 34 S (E9087) BPW 34 S (E9087) 6.7 (0.264) 6.2 (0.244) 1.7 (0.067) 1.5 (0.059) 4.0 (0.157) 3.7 (0.146) 1.8 (0.071) ±0.2 (0.008) 0.9 (0.035) 0.7 (0.028) 4.5 (0.177) 4.3 (0.169) 0...5 ˚ 0.2 (0.008) 0.1 (0.004) 1.1 (0.043) 0.9 (0.035) 0.3 (0.012) 1.2 (0.047) 1.1 (0.043) 0...0.1 (0...0.004) Chip position Photosensitive area Cathode lead 2.65 (0.104) x 2.65 (0.104) GEOY6916 Maße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch). Published by OSRAM Opto Semiconductors GmbH & Co. OHG Wernerwerkstrasse 2, D-93049 Regensburg © All Rights Reserved. Attention please! The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2003-02-04 6