IXYS DE475-102N20A Rf power mosfet Datasheet

DE475-102N20A
RF Power MOSFET
N-Channel Enhancement Mode
Low Qg and Rg
High dv/dt
Nanosecond Switching
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 150°C
1000
V
VDGR
TJ = 25°C to 150°C; RGS = 1 MΩ
1000
V
VGS
Continuous
±20
V
VGSM
Transient
±30
V
ID25
Tc = 25°C
20
A
IDM
Tc = 25°C, pulse width limited by TJM
120
A
IAR
Tc = 25°C
20
A
EAR
Tc = 25°C
30
mJ
IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS,
Tj ≤ 150°C, RG = 0.2Ω
5
V/ns
dv/dt
>200
V/ns
1800
W
730
W
4.5
W
RthJC
0.08
C/W
RthJHS
0.20
C/W
IS = 0
PDC
PDHS
Tc = 25°C
Derate 4.4W/°C above 25°C
PDAMB
Tc = 25°C
VDSS
=
1000 V
ID25
=
20 A
RDS(on)
≤
0.6 Ω
PDC
=
1800W
DRAIN
GATE
SG1
SG2
SD1
SD2
Features
Symbol
Test Conditions
• Isolated Substrate
− high isolation voltage (>2500V)
− excellent thermal transfer
− Increased temperature and power
Characteristic Values
TJ = 25°C unless otherwise specified
min.
VDSS
VGS = 0 V, ID = 3 ma
VGS(th)
VDS = VGS, ID = 250 µa
IGSS
VGS = ±20 VDC, VDS = 0
IDSS
VDS = 0.8 VDSS TJ = 25°C
VGS = 0
TJ = 125°C
RDS(on)
VGS = 15 V, ID = 0.5ID25
Pulse test, t ≤ 300µS, duty cycle d ≤ 2%
gfs
VDS = 15 V, ID = 0.5ID25, pulse test
typ.
1000
3.0
3.6
6
Advantages
±100
nA
9
+150
-55
1.6mm (0.063 in) from case for 10 s
S
V
150
Tstg
Ω
5.0
0.6
+150
cycling capability
IXYS advanced low Qg process
•
•
−
−
•
•
•
50 µA
1 mA
TJM
Weight
V
-55
TJ
TL
max.
Low gate charge and capacitances
easier to drive
faster switching
Low RDS(on)
Very low insertion inductance (<2nH)
No beryllium oxide (BeO) or other
hazardous materials
°C
• Optimized for RF and high speed
°C
• Easy to mount—no insulators needed
• High power density
°C
300
°C
3
g
switching at frequencies to 30MHz
DE475-102N20A
RF Power MOSFET
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C unless otherwise specified)
min.
typ.
0.3
Ω
6200
pF
185
pF
44
pF
46
pF
5
ns
5
ns
5
ns
8
ns
145
nC
28
nC
68
nC
RG
Ciss
Coss
VGS = 0 V, VDS = 0.8 VDSS(max),
f = 1 MHz
Crss
Cstray
Back Metal to any Pin
Td(on)
Ton
Td(off)
VGS = 15 V, VDS = 0.8 VDSS
ID = 0.5 IDM
RG = 0.2 Ω (External)
Toff
Qg(on)
Qgs
VGS = 10 V, VDS = 0.5 VDSS
ID = 0.5 ID25
Qgd
Source-Drain Diode
Characteristic Values
(TJ = 25°C unless otherwise specified)
Symbol
Test Conditions
IS
VGS = 0 V
ISM
Repetitive; pulse width limited by TJM
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle ≤ 2%
min.
typ.
Trr
QRM
max.
IF = IS, -di/dt = 100A/µs,
VR = 100V
IRM
max.
20
A
120
A
1.5
V
200
ns
0.6
µC
14
A
CAUTION: Operation at or above the Maximum Ratings values may impact device reliability or cause permanent damage to the device.
Information in this document is believed to be accurate and reliable. IXYSRF reserves the right to make changes to information published in this document at any time and without notice.
For detailed device mounting and installation instructions, see the “Device Installation & Mounting Instructions” technical note on the
IXYSRF web site at;
http://www.ixysrf.com/pdf/switch_mode/appnotes/7de_series_mosfet_installation_instructions.pdf
IXYS RF reserves the right to change limits, test conditions and dimensions.
IXYS RF MOSFETS are covered by one or more of the following U.S. patents:
4,835,592
4,860,072
4,881,106
4,891,686
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
5,640,045
DE475-102N20A
RF Power MOSFET
Fig. 1
Fig. 2
Typical Transfer Characteristics
V DS = 50V, PW = 15µS
Typical Output Characteristics
40
60
Top
ID , Drain Currnet (A)
ID , Drain Current (A)
50
40
30
20
30
Bottom
8-10V
7.5V
7V
6.5V
6V
5.5V
5V
20
10
10
0
0
4
5
6
7
8
9
10
11
0
12
10
20
30
40
50
60
70
80
90
100 110 120
VDS, Drain-to-Source Voltage (V)
VGS, Gate-to Source Voltage (V)
Fig. 3
Fig. 4
Gate Charge vs. Gate-to-Source Voltage
V GS = 500V, ID = 10A, Ig = 4m A
Extended Typical Output Characteristics
14
12
10
8
6
4
9-10V
8V
7.5V
7V
6.5V
6V
5.5V
60
Bottom
40
20
2
0
0
0
50
100
150
200
250
0
Gate Charge (nC)
Fig. 5
Ciss
10000
1000
Coss
100
Crss
10
1
0
100
200
300
400
25
50
75
100
VDS, Drain-to-Source Voltage (V)
VD S vs. Capacitance
Capacitance (pF)
Top
80
ID, Drain Currnet (A)
Gate-to-Source Voltage (V)
16
500
VDS Voltage (V)
600
700
800
125
DE475-102N20A
RF Power MOSFET
Fig. 6 Package Drawing
Source
Source
Gate
Drain
Source
Source
DE475-102N20A
RF Power MOSFET
102N20A DE-SERIES SPICE Model
The DE-SERIES SPICE Model is illustrated in Figure 7. The model is an expansion of the SPICE
level 3 MOSFET model. It includes the stray inductive terms LG, LS and LD. Rd is the RDS(ON) of the
device, Rds is the resistive leakage term. The output capacitance, COSS, and reverse transfer capacitance, CRSS are modeled with reversed biased diodes. This provides a varactor type response
necessary for a high power device model. The turn on delay and the turn off delay are adjusted
via Ron and Roff.
Figure 7 DE-SERIES SPICE Model
This SPICE model may be downloaded as a text file from the IXYSRF web site at
http://www.ixysrf.com/products/switch_mode.html
http://www.ixysrf.com/spice/de475-102n20a.html
Net List:
.SUBCKT 102N20A 10 20 30
* TERMINALS: D G S
* 1000 Volt 20 Amp 0.6 ohm N-Channel Power MOSFET
* REV.A 10-29-01
M1 1 2 3 3 DMOS L=1U W=1U
RON 5 6 0.5
DON 6 2 D1
ROF 5 7 .1
DOF 2 7 D1
D1CRS 2 8 D2
D2CRS 1 8 D2
CGS 2 3 6.2N
RD 4 1 0.5
DCOS 3 1 D3
RDS 1 3 5.0MEG
LS 3 30 .5N
LD 10 4 1N
LG 20 5 1N
.MODEL DMOS NMOS (LEVEL=3 VTO=3.0 KP=3.8)
.MODEL D1 D (IS=.5F CJO=1P BV=100 M=.5 VJ=.6 TT=1N)
.MODEL D2 D (IS=.5F CJO=400P BV=1000 M=.4 VJ=.6 TT=400N RS=10M)
.MODEL D3 D (IS=.5F CJO=900P BV=1000 M=.3 VJ=.4 TT=400N RS=10M)
.ENDS
Doc #9200-0238 Rev 6
© 2009 IXYS RF
An
IXYS Company
2401 Research Blvd., Suite 108
Fort Collins, CO USA 80526
970-493-1901 Fax: 970-493-1903
Email: [email protected]
Web: http://www.ixyscolorado.com
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