DE475-102N20A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 Tc = 25°C 20 A IDM Tc = 25°C, pulse width limited by TJM 120 A IAR Tc = 25°C 20 A EAR Tc = 25°C 30 mJ IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.2Ω 5 V/ns dv/dt >200 V/ns 1800 W 730 W 4.5 W RthJC 0.08 C/W RthJHS 0.20 C/W IS = 0 PDC PDHS Tc = 25°C Derate 4.4W/°C above 25°C PDAMB Tc = 25°C VDSS = 1000 V ID25 = 20 A RDS(on) ≤ 0.6 Ω PDC = 1800W DRAIN GATE SG1 SG2 SD1 SD2 Features Symbol Test Conditions • Isolated Substrate − high isolation voltage (>2500V) − excellent thermal transfer − Increased temperature and power Characteristic Values TJ = 25°C unless otherwise specified min. VDSS VGS = 0 V, ID = 3 ma VGS(th) VDS = VGS, ID = 250 µa IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = 0.8 VDSS TJ = 25°C VGS = 0 TJ = 125°C RDS(on) VGS = 15 V, ID = 0.5ID25 Pulse test, t ≤ 300µS, duty cycle d ≤ 2% gfs VDS = 15 V, ID = 0.5ID25, pulse test typ. 1000 3.0 3.6 6 Advantages ±100 nA 9 +150 -55 1.6mm (0.063 in) from case for 10 s S V 150 Tstg Ω 5.0 0.6 +150 cycling capability IXYS advanced low Qg process • • − − • • • 50 µA 1 mA TJM Weight V -55 TJ TL max. Low gate charge and capacitances easier to drive faster switching Low RDS(on) Very low insertion inductance (<2nH) No beryllium oxide (BeO) or other hazardous materials °C • Optimized for RF and high speed °C • Easy to mount—no insulators needed • High power density °C 300 °C 3 g switching at frequencies to 30MHz DE475-102N20A RF Power MOSFET Symbol Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) min. typ. 0.3 Ω 6200 pF 185 pF 44 pF 46 pF 5 ns 5 ns 5 ns 8 ns 145 nC 28 nC 68 nC RG Ciss Coss VGS = 0 V, VDS = 0.8 VDSS(max), f = 1 MHz Crss Cstray Back Metal to any Pin Td(on) Ton Td(off) VGS = 15 V, VDS = 0.8 VDSS ID = 0.5 IDM RG = 0.2 Ω (External) Toff Qg(on) Qgs VGS = 10 V, VDS = 0.5 VDSS ID = 0.5 ID25 Qgd Source-Drain Diode Characteristic Values (TJ = 25°C unless otherwise specified) Symbol Test Conditions IS VGS = 0 V ISM Repetitive; pulse width limited by TJM VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2% min. typ. Trr QRM max. IF = IS, -di/dt = 100A/µs, VR = 100V IRM max. 20 A 120 A 1.5 V 200 ns 0.6 µC 14 A CAUTION: Operation at or above the Maximum Ratings values may impact device reliability or cause permanent damage to the device. Information in this document is believed to be accurate and reliable. IXYSRF reserves the right to make changes to information published in this document at any time and without notice. For detailed device mounting and installation instructions, see the “Device Installation & Mounting Instructions” technical note on the IXYSRF web site at; http://www.ixysrf.com/pdf/switch_mode/appnotes/7de_series_mosfet_installation_instructions.pdf IXYS RF reserves the right to change limits, test conditions and dimensions. IXYS RF MOSFETS are covered by one or more of the following U.S. patents: 4,835,592 4,860,072 4,881,106 4,891,686 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 5,640,045 DE475-102N20A RF Power MOSFET Fig. 1 Fig. 2 Typical Transfer Characteristics V DS = 50V, PW = 15µS Typical Output Characteristics 40 60 Top ID , Drain Currnet (A) ID , Drain Current (A) 50 40 30 20 30 Bottom 8-10V 7.5V 7V 6.5V 6V 5.5V 5V 20 10 10 0 0 4 5 6 7 8 9 10 11 0 12 10 20 30 40 50 60 70 80 90 100 110 120 VDS, Drain-to-Source Voltage (V) VGS, Gate-to Source Voltage (V) Fig. 3 Fig. 4 Gate Charge vs. Gate-to-Source Voltage V GS = 500V, ID = 10A, Ig = 4m A Extended Typical Output Characteristics 14 12 10 8 6 4 9-10V 8V 7.5V 7V 6.5V 6V 5.5V 60 Bottom 40 20 2 0 0 0 50 100 150 200 250 0 Gate Charge (nC) Fig. 5 Ciss 10000 1000 Coss 100 Crss 10 1 0 100 200 300 400 25 50 75 100 VDS, Drain-to-Source Voltage (V) VD S vs. Capacitance Capacitance (pF) Top 80 ID, Drain Currnet (A) Gate-to-Source Voltage (V) 16 500 VDS Voltage (V) 600 700 800 125 DE475-102N20A RF Power MOSFET Fig. 6 Package Drawing Source Source Gate Drain Source Source DE475-102N20A RF Power MOSFET 102N20A DE-SERIES SPICE Model The DE-SERIES SPICE Model is illustrated in Figure 7. The model is an expansion of the SPICE level 3 MOSFET model. It includes the stray inductive terms LG, LS and LD. Rd is the RDS(ON) of the device, Rds is the resistive leakage term. The output capacitance, COSS, and reverse transfer capacitance, CRSS are modeled with reversed biased diodes. This provides a varactor type response necessary for a high power device model. The turn on delay and the turn off delay are adjusted via Ron and Roff. Figure 7 DE-SERIES SPICE Model This SPICE model may be downloaded as a text file from the IXYSRF web site at http://www.ixysrf.com/products/switch_mode.html http://www.ixysrf.com/spice/de475-102n20a.html Net List: .SUBCKT 102N20A 10 20 30 * TERMINALS: D G S * 1000 Volt 20 Amp 0.6 ohm N-Channel Power MOSFET * REV.A 10-29-01 M1 1 2 3 3 DMOS L=1U W=1U RON 5 6 0.5 DON 6 2 D1 ROF 5 7 .1 DOF 2 7 D1 D1CRS 2 8 D2 D2CRS 1 8 D2 CGS 2 3 6.2N RD 4 1 0.5 DCOS 3 1 D3 RDS 1 3 5.0MEG LS 3 30 .5N LD 10 4 1N LG 20 5 1N .MODEL DMOS NMOS (LEVEL=3 VTO=3.0 KP=3.8) .MODEL D1 D (IS=.5F CJO=1P BV=100 M=.5 VJ=.6 TT=1N) .MODEL D2 D (IS=.5F CJO=400P BV=1000 M=.4 VJ=.6 TT=400N RS=10M) .MODEL D3 D (IS=.5F CJO=900P BV=1000 M=.3 VJ=.4 TT=400N RS=10M) .ENDS Doc #9200-0238 Rev 6 © 2009 IXYS RF An IXYS Company 2401 Research Blvd., Suite 108 Fort Collins, CO USA 80526 970-493-1901 Fax: 970-493-1903 Email: [email protected] Web: http://www.ixyscolorado.com