Formosa FFM304 Fast recovery type Datasheet

Formosa MS
Chip Silicon Rectifier
FFM301 THRU FFM307
Fast recovery type
Features
SMC
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O Utilizing Flame
Retardant Epoxy Molding Compound.
0.276(7.0)
0.260(6.6)
For surface mounted applications.
0.012(0.3) Typ.
0.152(3.8)
0.144(3.6)
0.189(4.8)
0.173(4.4)
Exceeds environmental standards of MIL-S-19500 /
228
0.244(6.2)
0.228(5.8)
Low leakage current.
0.087(2.2)
0.071(1.8)
0.032(0.8) Typ.
0.040(1.0) Typ.
Mechanical data
Case : Molded plastic, JEDEC DO-214AB
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by c athode band
Mounting Position : Any
Weight : 0.00585 ounce, 0.195 gram
0.040 (1.0) Typ.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (AT TA=25oC unless otherwise noted)
PARAMETER
CONDITIONS
Symbol
o
Forward rectified current
Ambient temperature = 55 C
Forward surge current
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
25o C
VR = VRRM TA =
Reverse current
MAX.
UNIT
IO
3.0
A
IFSM
100
A
10.0
uA
300
Junction to ambient
Diode junction capacitance
Rq JA
f=1MHz and applied 4vDC reverse voltage
TSTG
V RRM
*1
V RMS
(V)
(V)
*2
VR
*3
(V)
FFM301
F31
50
35
50
FFM302
F32
100
70
100
FFM303
F33
200
140
200
FFM304
F34
400
280
400
FFM305
F35
600
420
600
FFM306
F36
800
560
800
FFM307
F37
1000
700
1000
VF
*4
(V)
T RR
*5
(nS)
uA
o
50
CJ
Storage temperature
MARKING
CODE
TYP.
IR
VR = VRRM TA = 100o C
Thermal resistance
SYMBOLS
MIN.
C / w
60
-55
pF
+150
o
C
Operating
temperature
( o C)
150
*1 Repetitive peak reverse voltage
1.3
-55 to +150
*2 RMS voltage
250
*3 Continuous reverse voltage
500
*4 Maximum forward voltage
*5 Reverse recovery time
RATING AND CHARACTERISTIC CURVES (FFM301 THRU FFM307)
FIG.1-TYPICAL FORWARD
FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT,(A)
CHARACTERISTICS
10
3.0
1.0
3.6
3.0
2.4
Single Phase
1.8
Half Wave 60Hz
Resistive Or Inductive Load
1.2
0.6
0
0
20
40
Tj=25 C
60
80
100
120
140
160
180
200
AMBIENT TEMPERATURE ( C)
Pulse Width 300us
1% Duty Cycle
0.1
.01
.6
.8
1.0
1.2
1.4
1.6
1.8
2.0
FORWARD VOLTAGE,(V)
FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE
RECOVERY TIME CHARACTERISTICS
50W
NONINDUCTIVE
10W
NONINDUCTIVE
( )
(+)
D.U.T.
25Vdc
(approx.)
PULSE
GENERATOR
(NOTE 2)
( )
PEAK FORWAARD SURGE CURRENT,(A)
FIG.4-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
100
80
60
Sine Wave
40
JEDEC method
20
0
1
5
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
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0
-0.25A
100
FIG.5-TYPICAL JUNCTION CAPACITANCE
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.
+0.5A
50
10
NUMBER OF CYCLES AT 60Hz
OSCILLISCOPE
(NOTE 1)
trr
8.3ms Single Half
Tj=25 C
(+)
1W
NONINDUCTIVE
70
JUNCTION CAPACITANCE,(pF)
INSTANTANEOUS FORWARD CURRENT,(A)
50
60
50
40
30
20
10
0
-1.0A
1cm
SET TIME BASE FOR
50 / 10ns / cm
.01
.05
.1
.5
1
REVERSE VOLTAGE,(V)
5
10
50
100
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