AP55T10GS-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Lower Gate Charge ▼ Fast Switching Characteristic 100V RDS(ON) 18mΩ ID G ▼ RoHS Compliant & Halogen-Free BVDSS 54A S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. GD S TO-263(S) The TO-263 package is widely preferred for commercial-industrial surface mount applications and suited for switching power applications. Absolute Maximum Ratings Rating Units VDS Symbol Drain-Source Voltage Parameter 100 V VGS Gate-Source Voltage +20 V ID@TC=25℃ Continuous Drain Current, V GS @ 10V 54 A ID@TC=100℃ Continuous Drain Current, V GS @ 10V 38 A 160 A 125 W 3.75 W 1 IDM Pulsed Drain Current PD@TC=25℃ Total Power Dissipation 3 PD@TA=25℃ Total Power Dissipation TSTG Storage Temperature Range -55 to 175 ℃ TJ Operating Junction Temperature Range -55 to 175 ℃ Thermal Data Symbol Parameter Value Units Rthj-c Maximum Thermal Resistance, Junction-case 1.2 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) 3 40 ℃/W Data and specifications subject to change without notice 1 201103111 AP55T10GS-HF o Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 100 - - V RDS(ON) Static Drain-Source On-Resistance 2 VGS=10V, ID=30A - - 18 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 5 V gfs Forward Transconductance VDS=10V, ID=40A - 55 - S IDSS Drain-Source Leakage Current VDS=80V, VGS=0V - - 25 uA IGSS Gate-Source Leakage VGS= +20V, VDS=0V - - +100 nA ID=40A - 63 100 nC 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=80V - 23 - nC Qgd Gate-Drain ("Miller") Charge VGS=10V - 30 - nC 2 td(on) Turn-on Delay Time VDS=50V - 20 - ns tr Rise Time ID=10A - 35 - ns td(off) Turn-off Delay Time RG=3.3Ω - 30 - ns tf Fall Time VGS=10V - 15 - ns Ciss Input Capacitance VGS=0V - 3300 5280 pF Coss Output Capacitance VDS=25V - 320 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 190 - pF Rg Gate Resistance f=1.0MHz - 1 - Ω Min. Typ. IS=30A, VGS=0V - - 1.3 V Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 2 Test Conditions Max. Units trr Reverse Recovery Time IS=10A, VGS=0V - 70 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 220 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in 2 copper pad of FR4 board THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP55T10GS-HF 120 160 10V 9.0V 8.0V ID , Drain Current (A) 120 7.0V 80 40 10V 9.0V 8.0V 7.0V T C = 175 o C 100 ID , Drain Current (A) o T C = 25 C 80 60 V G = 6.0V 40 V G = 6.0V 20 0 0 0 4 8 12 16 20 0 4 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 12 16 Fig 2. Typical Output Characteristics 2.8 1.2 I D =40A V G =10V I D =1mA 2.4 Normalized RDS(ON) 1.1 Normalized BVDSS (V) 8 V DS , Drain-to-Source Voltage (V) 1 2.0 1.6 1.2 0.9 0.8 0.4 0.8 -50 0 50 100 150 -50 200 0 50 100 150 200 T j , Junction Temperature ( o C) T j , Junction Temperature ( o C) Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance Temperature v.s. Junction Temperature 40 1.6 Normalized VGS(th) (V) I D =250uA IS(A) 30 20 T j =175 o C T j =25 o C 10 1.2 0.8 0.4 0 0 0 0.2 0.4 0.6 0.8 1 1.2 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.4 -50 0 50 100 150 200 T j ,Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP55T10GS-HF I D = 40 A V DS =80V 10 4000 8 C (pF) VGS , Gate to Source Voltage (V) f=1.0MHz 5000 12 C iss 3000 6 2000 4 1000 2 0 C oss C rss 0 0 20 40 60 80 1 5 9 13 17 21 25 29 V DS ,Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 10us Operation in this area limited by RDS(ON) ID (A) 100 Normalized Thermal Response (Rthjc) 1000 100us 10 1ms 10ms 100ms DC o T c =25 C Single Pulse Duty factor=0.5 0.2 0.1 0.1 0.05 PDM 0.02 t T 0.01 Duty factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse 0.01 1 0.1 1 10 100 1000 0.00001 0.0001 0.001 V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area 0.01 0.1 1 10 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 10V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4