BF244A / BF244B / BF244C BF244A BF244B BF244C S G TO-92 D N-Channel RF Amplifier This device is designed for RF amplifier and mixer applications operating up to 450 MHz, and for analog switching requiring low capacitance. Sourced from Process 50. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units VDG Drain-Gate Voltage VGS Gate-Source Voltage 30 V - 30 V ID Drain Current 50 mA IGF Forward Gate Current 10 mA Tstg Storage Temperature Range -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD TA = 25°C unless otherwise noted Characteristic RθJC Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 1997 Fairchild Semiconductor Corporation Max Units BF244A / BF244B / BF244C 350 2.8 125 mW mW/°C °C/W 357 °C/W (continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units OFF CHARACTERISTICS IG = 1.0 µA, VDS = 0 VGS = - 20 V, VDS = 0 30 V(BR)GSS Gate-Source Breakdown Voltage IGSS Gate Reverse Current VGSS(off) Gate-Source Cutoff Voltage VDS = 15 V, ID = 10 nA VGS Gate-Source Voltage VDS = 15 V, ID = 200 µA 244A 244B 244C VDS = 15 V, VGS = 0 V 5.0 nA - 0.5 - 8.0 V - 0.4 - 1.6 - 3.2 - 2.2 - 3.8 - 7.5 V V V 244A 244B 244C 2.0 6.0 12 6.5 15 25 mA mA mA 3.0 6.5 mmhos mmhos BF244A / BF244B / BF244C N-Channel RF Amplifier ON CHARACTERISTICS IDSS Zero-Gate Voltage Drain Current SMALL SIGNAL CHARACTERISTICS Forward Transfer Admittance yos Output Admittance VDS = 15 V, VGS = 0, f = 1.0 kHz VDS = 15 V, VGS = 0, f = 200 MHz VDS = 15 V, VGS = 0, f = 1.0 kHz yrs Reverse Transfer Admittance VDS = 15 V, VGS = 0, f = 200 MHz 1.0 Ciss Input Capacitance VDS = 20 V, VGS = - 1.0 V 3.0 µmhos pF Crss Reverse Transfer Capacitance 0.7 pF Coss Output Capacitance 0.9 pF NF Noise Figure 1.5 dB F(Yfs) Cut-Off Frequency VDS = 20 V, VGS = - 1.0 V, f = 1.0 MHz VDS = 20 V, VGS = - 1.0 V, f = 1.0 MHz VDS = 15 V, VGS = 0, RG = 1.0 kΩ, f = 100 MHz VDS = 15 V, VGS = 0 700 MHz yfs 5.6 40 µmhos 5 Typical Characteristics Channel Resistance vs Temperature Transfer Characteristics 1000 V GS(OFF) = -4.5V V DS = 15V r DS - DRAIN ON RESISTANCE (Ω ) 20 ID - DRAIN CURRENT (mA) O TA = -55 C 16 O T A = +25 C T A = +125O C 12 O TA = -55 C O T A = +25 C 8 T A = +125O C 4 -2.5 V 0 500 -1 -2 -3 -4 VGS - GATE-SOURCE VOLTAGE(V) -5 -2.5 V 200 -5.0V 100 -8.0 V 50 30 V DS 20 = 100mV V GS = 0 V 10 0 V GS(OFF) = -1.0V 300 -50 0 50 100 150 T A - AMBIENT TEMPERATURE ( C) (continued) (continued) Transconductance Characteristics V 6 5 = 15V T A = +25 C T A = +125O C 5 O TA = -55 C 4 O T A = +25 C O T A = +125 C 3 V GS(OFF) = -4.5V 2 1 0 DS O -2.5 V 0 -1 -2 -3 -4 VGS- GATE-SOURCE VOLTAGE(V) 4 TYP V = V G S(OFF) = -5.5V 5.0V 20 V 10 DG = 5v 10 5 10V 15V 20V 5 10 15 15 20 20 1 V 0.5 V 0.1 0.01 0.02 G S(OFF) G S(OFF) = -3.5V = -1.5V 0.05 0.1 0.2 0.5 1 2 I D -- DRAIN CURRENT (mA) -3.0V -3.5V 1 -4.0V 0 5 10 50 30 20 10 5 20 VGS(OFF) 10 -1 3 2 @ V GS = 15V, I D= 1nA -2 -3 -5 -7 V - GATE-SOURCE VOLTAGE(V) 1 - 10 V DG = 15V BW = 6.0 Hz @ f = 10 Hz, 100 Hz = 0.2 f @ f > 1.0 kHz Hz ) e n- NOISE VOLTAGE ( nV/ gfs -- TRANSCONDUCTANCE (mmhos) O T A = +25 C T A = +125 O C O TA = -55 C O T A = +25 C T A = +125 O C = - 5V V DG = 15V f = 1.0 kHz 0.1 0.01 0.02 100 Noise Voltage vs Frequency V GS(OFF) = - 1.5V O TA = -55 C 5 V GS(OFF) 1 GS 10 0.5 0.2 0.4 0.6 0.8 VDS - DRAIN-SOURCE VOLTAGE(V) gfs, IDSS @ V DS = 15 V, V GS = 0 PULSE r DS @ VDS= 100mV, V GS = 0 Transconductance vs Drain Current 1 -2.5V S Transconductance Parameter Interactions O V G 0V 5V -0. -1.0V V -1.5 -2.0V 2 Output Conductance vs Drain Current T A = +25 C f = 1.0 kHz = -5.0V GS(OFF) 3 0 -5 O T A = +25 C gfs --- TRANSCONDUCTANCE ( mmhos ) I -- DRAIN CURRENT ( mA ) DSS O TA = -55 C I D -- DRAIN CURRENT (mA) 7 Common Drain-Source Characteristics r DS -- DRAIN "ON" RESISTANCE ( Ω ) gos -- OUTPUT CONDUCTANCE (u mhos) gfs -- TRANSCONDUCTANCE (mmhos) Typical Characteristics 0.05 0.1 0.2 0.5 1 2 I D - DRAIN CURRENT (mA) 5 10 I D = 0.5 mA 10 5 I D = 3 mA 1 0.01 0.03 0.1 0.3 1 3 10 f -- FREQUENCY (kHz) 30 100 BF244A / BF244B / BF244C N-Channel RF Amplifier (continued) Typical Characteristics (continued) Capacitance vs Voltage Noise Figure Frequency 10 5 ) -- CAPACITANCE (pF) f = 0.1 - 1.0 MHz V DS NF -- NOISE FIGURE (dB) 5 C is ( V DS = 15 V) 1 C is ( C rs C rs ( V DS = 0 V) 0 -5 -10 -15 VG S-- GATE-SOURCE VOLTAGE(V) 4 3 I = 15V = 5.0 mA R g = 1.0 k Ω O T A = +25 C 2 1 0 10 -20 D BF244A / BF244B / BF244C N-Channel RF Amplifier 20 30 50 100 200 300 f -- FREQUENCY (MHz) 500 1000 Common Gate Characteristics Input Admittance Yigs -- INPUT ADMITTANCE (mmhos) Y ogs-- OUTPUT CONDUCTANCE (mmhos) Output Admittance 1 b Og S (x 10) g Ogs V DS = 15V V GS = 0 (CG) 100 200 300 500 f -- FREQUENCY (MHz) 700 V DS = 15V V GS = 0 (CG) 10 1 100 +g fgs -b fgs 1 V DS = 15V V GS = 0 (CG) 200 300 500 f -- FREQUENCY (MHz ) 700 200 300 500 f -- FREQUENCY (MHz) 700 1000 Reverse Transadmittance 1000 Y rgs-- REVERSE TRANSFER (mmhos) Yfgs -- FORWARD TRANSFER (mmhos) Forward Transadmittance 100 5 b igs 1000 10 5 g igs 5 1 V DS = 15V V GS = 0 (CG) g rgs - b rgs 100 200 300 500 f -- FREQUENCY (MHz) 700 1000 (continued) Common Source Characteristics Input Admittance Y Yis s -- INPUT ADMITTANCE (mmhos) b OSS (x 10) g OSS V DS = 15V V GS = 0 (CS) OSS -- OUTPUT CONDUCTANCE (mmhos) Output Admittance 1 100 200 300 500 f -- FREQUENCY (MHz) 700 1000 10 V DS = 15V V GS = 0 5 (CS) 1 b iss g iss 100 5 +g fss -b fss 1 V DS = 15V V GS = 0 (CS) 100 200 300 500 f -- FREQUENCY (MHz) 700 700 1000 Reverse Transadmittance 10 Y rss-- REVERSE TRANSFER (mmhos) Yfss -- FORWARD TRANSFER (mmhos) Forward Transadmittance 200 300 500 f -- FREQUENCY (MHz) 1000 10 5 - b rss 1 -g rss ( X 0.1) V DS = 15V V GS = 0 (CS) 100 200 300 500 f -- FREQUENCY (MHz) 700 1000 BF244A / BF244B / BF244C N-Channel RF Amplifier TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST FASTr™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER SMART START™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. G