PHILIPS BYV26C Fast soft-recovery controlled avalanche rectifier Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, 2 columns
M3D116
BYV26 series
Fast soft-recovery
controlled avalanche rectifiers
Product specification
Supersedes data of February 1994
1996 May 30
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYV26 series
FEATURES
DESCRIPTION
• Glass passivated
Rugged glass SOD57 package, using
a high temperature alloyed
construction.
• High maximum operating
temperature
• Low leakage current
• Excellent stability
• Guaranteed avalanche energy
absorption capability
• Available in ammo-pack.
2/3 page k(Datasheet)
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
a
MAM047
Fig.1 Simplified outline (SOD57) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VRRM
PARAMETER
CONDITIONS
IF(AV)
−
200
V
BYV26B
−
400
V
−
600
V
BYV26D
−
800
V
BYV26E
−
1000
V
BYV26F
−
1200
V
BYV26G
−
1400
V
BYV26A
−
200
V
BYV26B
−
400
V
continuous reverse voltage
BYV26C
−
600
V
BYV26D
−
800
V
BYV26E
−
1000
V
BYV26F
−
1200
V
BYV26G
−
1400
V
−
1.00
A
−
1.05
A
−
0.65
A
−
0.68
A
BYV26A to E
−
10.0
A
BYV26F and G
−
9.6
A
average forward current
BYV26F and G
average forward current
BYV26A to E
BYV26F and G
IFRM
UNIT
BYV26C
BYV26A to E
IF(AV)
MAX.
repetitive peak reverse voltage
BYV26A
VR
MIN.
repetitive peak forward current
1996 May 30
Ttp = 85 °C; lead length = 10 mm;
see Figs 2 and 3;
averaged over any 20 ms period;
see also Figs 10 and 11
Tamb = 60 °C; PCB mounting (see
Fig.19); see Figs 4 and 5;
averaged over any 20 ms period;
see also Figs 10 and 11
Ttp = 85 °C; see Figs 6 and 7
2
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
SYMBOL
IFRM
BYV26 series
PARAMETER
repetitive peak forward current
CONDITIONS
MIN.
MAX.
UNIT
Tamb = 60 °C; see Figs 8 and 9
BYV26A to E
−
6.0
A
BYV26F and G
−
6.4
A
IFSM
non-repetitive peak forward current t = 10 ms half sine wave; Tj = Tj max
prior to surge; VR = VRRMmax
−
30
A
ERSM
non-repetitive peak reverse
avalanche energy
−
10
mJ
Tstg
storage temperature
−65
+175
°C
Tj
junction temperature
−65
+175
°C
MIN.
TYP.
MAX.
−
−
1.3
V
−
−
1.3
V
−
−
2.50
V
−
−
2.15
V
BYV26A
300
−
−
V
BYV26B
500
−
−
V
IR = 400 mA; Tj = Tj max prior to
surge; inductive load switched off
see Figs 12 and 13
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
VF
PARAMETER
forward voltage
BYV26A to E
CONDITIONS
IF = 1 A; Tj = Tj max;
see Figs 14 and 15
BYV26F and G
VF
forward voltage
BYV26A to E
IF = 1 A;
see Figs 14 and 15
BYV26F and G
V(BR)R
IR
trr
reverse avalanche breakdown
voltage
IR = 0.1 mA
BYV26C
700
−
−
V
BYV26D
900
−
−
V
BYV26E
1100
−
−
V
BYV26F
1300
−
−
V
BYV26G
1500
−
−
V
VR = VRRMmax; see Fig.16
−
−
5
µA
VR = VRRMmax;
Tj = 165 °C; see Fig.16
−
−
150
µA
−
−
30
ns
reverse current
reverse recovery time
BYV26A to C
when switched from
IF = 0.5 A to IR = 1 A;
measured at IR = 0.25 A;
see Fig.20
−
−
75
ns
−
−
150
ns
−
45
−
pF
BYV26D and E
−
40
−
pF
BYV26F and G
−
35
−
pF
BYV26D and E
BYV26F and G
Cd
diode capacitance
BYV26A to C
1996 May 30
UNIT
f = 1 MHz; VR = 0 V;
see Figs 17 and 18
3
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
SYMBOL
dI R
-------dt
PARAMETER
BYV26 series
CONDITIONS
maximum slope of reverse recovery when switched from
IF = 1 A to VR ≥ 30 V and
current
dI
F/dt = −1 A/µs;
BYV26A to C
see Fig.21
BYV26D and E
BYV26F and G
MIN.
TYP.
MAX.
UNIT
−
−
7
A/µs
−
−
6
A/µs
−
−
5
A/µs
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-tp
thermal resistance from junction to tie-point
lead length = 10 mm
Rth j-a
thermal resistance from junction to ambient
note 1
VALUE
UNIT
46
K/W
100
K/W
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.19.
For more information please refer to the “General Part of associated Handbook”.
1996 May 30
4
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYV26 series
GRAPHICAL DATA
MSA855
1
MLB533
2
handbook, halfpage
handbook, halfpage
20 15
10 lead length (mm)
I F(AV)
I F(AV)
(A)
(A)
lead length 10 mm
1
0.5
0
0
100
0
T tp ( oC)
BYV26A to E
a = 1.42; VR = VRRMmax; δ = 0.5.
Switched mode application.
Fig.2
T tp ( oC)
200
BYV26F and G
a = 1.42; VR = VRRMmax; δ = 0.5.
Switched mode application.
Maximum average forward current as a
function of tie-point temperature (including
losses due to reverse leakage).
Fig.3
MSA856
1
Maximum average forward current as a
function of tie-point temperature (including
losses due to reverse leakage).
MLB534
1
handbook, halfpage
handbook, halfpage
I F(AV)
I F(AV)
(A)
(A)
0.5
0.5
0
0
0
100
o
Tamb ( C)
200
0
BYV26A to E
a = 1.42; VR = VRRMmax; δ = 0.5.
Device mounted as shown in Fig.19.
Switched mode application.
Fig.4
100
0
200
o
Tamb ( C)
200
BYV26F and G
a = 1.42; VR = VRRMmax; δ = 0.5.
Device mounted as shown in Fig.19.
Switched mode application.
Maximum average forward current as a
function of ambient temperature (including
losses due to reverse leakage).
1996 May 30
100
Fig.5
5
Maximum average forward current as a
function of ambient temperature (including
losses due to reverse leakage).
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYV26 series
MSA860
12
I FRM
(A)
10
δ = 0.05
8
6
0.1
4
0.2
0.5
2
1
0
10 2
10 1
1
10
10 2
10 3
t p (ms)
10 4
BYV26A to E.
Ttp = 85°C; Rth j-tp = 46 K/W.
VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1000 V.
Fig.6 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
MLB535
10
I FRM
(A)
δ = 0.05
8
6
0.1
4
0.2
0.5
2
1
0
10 2
10 1
1
10
10 2
10 3
t p (ms)
10 4
BYV26F and G.
Ttp = 85°C; Rth j-tp = 46 K/W.
VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1400 V.
Fig.7 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1996 May 30
6
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYV26 series
MSA859
6
I FRM
(A)
δ = 0.05
5
4
0.1
3
0.2
2
0.5
1
1
0
10 2
10 1
1
10
10 2
10 3
t p (ms)
10 4
BYV26A to E
Tamb = 60 °C; Rth j-a = 100 K/W.
VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1000 V.
Fig.8 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
MLB536
8
I FRM
(A)
δ = 0.05
6
0.1
4
0.2
2
0.5
1
0
10 2
10 1
1
10
10 2
10 3
t p (ms)
10 4
BYV26F and G
Tamb = 60 °C; Rth j-a = 100 K/W.
VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1400 V.
Fig.9 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1996 May 30
7
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYV26 series
MSA854
3
MLB532
3
P
(W)
P
(W)
a = 3 2.5
2
1.57
2
a=3
2
2.5
2
1.57
1.42
1.42
1
1
0
0
0
0.5
1
I F(AV) (A)
0
0.5
1
I F(AV) (A)
BYV26A to E
a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5.
BYV26F and G
a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5.
Fig.10 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function of
average forward current.
Fig.11 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function of
average forward current.
MSA857
200
MLB599
200
handbook, halfpage
handbook, halfpage
Tj
( oC)
Tj
( oC)
100
100
A
B
C
D
F
E
0
0
400
800
V R (V)
0
1200
BYV26A to E
Solid line = VR.
Dotted line = VRRM; δ = 0.5.
1000
VR (V)
2000
BYV26F and G
Solid line = VR.
Dotted line = VRRM; δ = 0.5.
Fig.12 Maximum permissible junction temperature
as a function of reverse voltage.
1996 May 30
0
G
Fig.13 Maximum permissible junction temperature
as a function of reverse voltage.
8
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYV26 series
MSA853
MBD427
8
8
handbook, halfpage
handbook, halfpage
IF
(A)
IF
(A)
6
6
4
4
2
2
0
0
0
2
4
6
VF (V)
8
0
BYV26A to E
Dotted line: Tj = 175 °C.
Solid line: Tj = 25 °C.
2
4
VF (V)
6
BYV26F and G
Dotted line: Tj = 175 °C.
Solid line: Tj = 25 °C.
Fig.14 Forward current as a function of forward
voltage; maximum values.
Fig.15 Forward current as a function of forward
voltage; maximum values.
MGC550
103
handbook, halfpage
MSA858
10 2
handbook, halfpage
IR
(µA)
Cd
(pF)
102
BYV26A,B,C
10
BYV26D,E
10
1
1
0
100
Tj (°C)
1
200
102
V R (V)
10
3
BYV26A to E
f = 1 MHz; Tj = 25 °C.
VR = VRRMmax.
Fig.16 Reverse current as a function of junction
temperature; maximum values.
1996 May 30
10
Fig.17 Diode capacitance as a function of reverse
voltage, typical values.
9
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYV26 series
MBD437
10 2
handbook, halfpage
50
handbook, halfpage
25
Cd
(pF)
7
50
10
2
3
1
1
10 2
10
10 3
V R (V)
10 4
MGA200
BYV26F and G
f = 1 MHz; Tj = 25 °C.
Dimensions in mm.
Fig.18 Diode capacitance as a function of reverse
voltage, typical values.
DUT
handbook, full pagewidth
Fig.19 Device mounted on a printed-circuit board.
IF
(A)
+
10 Ω
0.5
25 V
t rr
1Ω
50 Ω
0
t
0.25
0.5
IR
(A)
1
Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns.
Source impedance: 50 Ω; tr ≤ 15 ns.
Fig.20 Test circuit and reverse recovery time waveform and definition.
1996 May 30
10
MAM057
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYV26 series
IF halfpage
ndbook,
dI F
dt
t rr
10% t
dI R
dt
100%
IR
MGC499
Fig.21 Reverse recovery definitions.
1996 May 30
11
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
PACKAGE OUTLINE
handbook, full pagewidth
k
3.81
max
28 min
Dimensions in mm.
The marking band indicates the cathode.
,
4.57
max
BYV26 series
a
28 min
0.81
max
MBC880
Fig.22 SOD57.
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 May 30
12
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