BSP612P OptiMOS™-P Small-Signal-Transistor Product Summary Features VDS • P-channel RDS(on),max • Enhancement mode • Logic level (4.5V rated) -60 V VGS=10 V 120 mW VGS=4.5 V 170 ID -3 A • Avalanche rated • Qualified according to AEC Q101 PG-SOT-223 • 100% lead-free; RoHS compliant • Halogen-free according to AEC61249-2-21 Type Package Tape and Reel Information Marking BSS612P SOT223 H6327: 1000 pcs/ reel BSP612P Halogen Free Yes Packing Non dry Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T A=25 °C -3.0 T A=70 °C -2.44 Pulsed drain current I D,pulse T A=25 °C -12 Avalanche energy, single pulse E AS I D =-3 A, V DD =-25V, R GS = 25 Ω 150 Reverse diode dv /dt dv /dt I D=-3 A, V DS=-48 V, di /dt =200 A/µs, T j,max=150 °C Gate source voltage V GS Power dissipation1) P tot Operating and storage temperature T j, T stg ESD Class T A=25 °C JESD22-A114 -HBM Soldering Temperature IEC climatic category; DIN IEC 68-1 Rev 2.0 page 1 6 Unit A mJ kV/µs ±20 V 1.8 W -55 ... 150 °C 1C V 260 °C °C 55/150/56 °C 2015-10-07 BSP612P OptiMOS™-P Small-Signal-Transistor Symbol Conditions Values min. typ. Unit max. Thermal characteristics Thermal resistance, junction - soldering point (Pin 4) R thJS Thermal resistance, junction - ambient R thJA minimal footprint Thermal resistance, junction - ambient R thJA 6 cm2 cooling area1) 25 K/W 100 - - 70 - - -60 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=-250 µA Gate threshold voltage V GS(th) V DS=0 V, I D=-1 mA -2.0 -1.5 -1.0 Drain-source leakage current I DSS V DS=-60V, V GS=0 V, T j=25 °C - - -40 nA V DS=-60V, V GS=0V, T j=150 °C - - -20 mA V Gate-source leakage current I GSS V GS=-20V, V DS=0V - - -100 nA Drain-source on-state resistance R DS(on) V GS=-4.5 V, I D=-2.3 A - 140 170 mW V GS=-10 V, I D=-3 A - 101 120 4.6 - Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=2.44 A S 1) Device on 40mm x 40mm x 1.5mm epoxy PCB FR4 with 6cm² (one layer, 70µm thick) copper area for drain connection. PCB is vertical in still air. Rev 2.0 page 2 2015-10-07 BSP612P OptiMOS™-P Small-Signal-Transistor Symbol Conditions Values Unit min. typ. max. - 814 1083 - 248 330 Dynamic characteristics2) Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 109 163 Turn-on delay time t d(on) - 8.3 12.5 Rise time tr - 10.4 15.6 Turn-off delay time t d(off) - 43.2 64.8 Fall time tf - 11.3 17.0 Gate to source charge Q gs - -2.42 -3.2 Gate to drain charge Q gd - -10.1 -15.2 Gate charge total Qg - -26.3 -39.4 Gate plateau voltage V plateau - -3.1 - V - - -3.0 A - - -12 V GS=0 V, V DS=-25 V, f =1 MHz V DD=-30 V, V GS=10 V, I D=-3 A, R G,ext=2.7 W pF ns Gate Charge Characteristics2) V DD=-48 V, I D=-3 A, V GS=0 to -10 V nC Reverse Diode Diode continous forward current IS T A=25 °C Diode pulse current I S,pulse Diode forward voltage V SD V GS=0 V, I F=-3 A, - 0.80 1.1 V Reverse recovery time2) t rr - 44.8 67.2 ns Reverse recovery charge2) Q rr V R=-30 V, I F=-3 A, di F/dt =100 A/µs - 62.9 94.4 nC 2) Defined by design. Not subjected to production test Rev 2.0 page 3 2015-10-07 BSP612P 1 Power dissipation 2 Drain current P tot=f(T A) I D=f(T A); V GS≤-10 V 2 3.5 1.8 3 1.6 2.5 1.4 2 ID [A] Ptot [W] 1.2 1 1.5 0.8 0.6 1 0.4 0.5 0.2 0 0 0 40 80 120 160 0 40 TA [°C] 80 120 160 TA [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T A=25 °C; D =0 Z thJA=f(t p) parameter: t p parameter: D =t p/T 103 100 µs 101 102 1 ms 10 ms 0.5 ID [A] ZthJA [K/W] 100 10-1 101 0.2 0.1 DC 0.05 100 0.02 10-2 0.01 single pulse 10-3 10-1 10-1 100 101 102 VDS [V] Rev 2.0 10-5 10-4 10-3 10-2 10-1 100 101 102 tp [s] page 4 2015-10-07 BSP612P 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 250 20 6V 5V 3.5 V 4.5 V 200 10 V 15 RDS(on) [mW] ID [A] 4V 4V 10 150 4.5 V 5V 6V 100 10 V 3.5 V 5 50 0 0 0 1 2 3 4 5 0 6 1 2 VDS [V] 3 4 5 6 ID [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C 4 10 8 3 gfs [S] ID [A] 6 2 4 25 °C 1 2 125 °C 0 0 0 1 2 3 4 2 4 6 8 ID [A] VGS [V] Rev 2.0 0 page 5 2015-10-07 BSP612P 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=-3 A; V GS=-10 V V GS(th)=f(T j); V DS=VGS; I D=-1 mA parameter: I D 240 2.8 2.4 max 2 RDS(on) [mW] 160 VGS(th) [V] max typ 1.6 typ 1.2 2min 80 0.8 0.4 0 0 -60 -20 20 60 100 140 -60 -20 20 Tj [°C] 60 100 140 Tj [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz; Tj=25°C I F=f(V SD) parameter: T j 104 101 150 °C 100 150 °C, 98% 25 °C 103 Ciss IF [A] C [pF] 25 °C, 98% Coss 10-1 Crss 102 10-2 101 10-3 0 20 40 60 VDS [V] Rev 2.0 0 0.4 0.8 1.2 1.6 2 VSD [V] page 6 2015-10-07 BSP612P 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 W V GS=f(Q gate); I D=-3 A pulsed parameter: T j(start) parameter: V DD 101 10 9 8 7 25 °C VGS [V] IAV [A] 6 100 100 °C 30 V 5 12 V 48 V 4 3 125 °C 2 1 10-1 0 100 101 102 0 103 8 16 24 Qgate [nC] tAV [µs] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=250 µA 70 V GS Qg VBR(DSS) [V] 65 60 V gs(th) 55 Q g(th) Q sw Q gs 50 -60 -20 20 60 100 Q gate Q gd 140 Tj [°C] Rev 2.0 page 7 2015-10-07 BSP612P SOT223 Package Outline: 179 Footprint: Rev 2.0 Packaging: page 8 2015-10-07 BSP612P Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev 2.0 page 9 2015-10-07