Infrared Emitting Diodes(GaAs) KODENSHI EL-313 DIMENSIONS (Unit : mm) The EL-313 is a high-power GaAs IRED mounted in a clear side-viewing package. This IRED is both compact and easy to mount. FEATURES •Compact plastic mold type APPLICATIONS •Optical switches •Transmission sensors MAXIMUM RATINGS Item Reverse voltage Forward current Power dissipation Pulse forward current *1 Operating temp. Storage temp. Soldering temp. *2 (Ta=25℃) Symbol Rating Unit VR IF PD IFP Topr. Tstg. Tsol. 4 50 100 1 －20～＋85 －30～＋85 240 V mA mW A ℃ ℃ ℃ *1. pulse width ：tw ≦100 μ sec.period ：T=10msec *2. For MAX.5 seconds at the position of 2 mm from the package ELECTRO-OPTICAL CHARACTERISTICS Item Forward voltage Reverse current Peak emission wavelength Radiant intensity *3 Half angle (Ta=25℃) Symbol Conditions VF IR λp PO Δθ IF=30mA VR=4V IF=20mA IF=30mA Min. Typ. Max. Unit. 1.2 1.5 10 V μ A nm mW deg. 940 2.0 ±20 *3. Exclusive PT r is used as detector - 1- Infrared Emitting Diodes(GaAs) EL-313 Power dissipation Vs. Ambient temperature Relative intensity Vs. Wavelength Radiant intensity Vs. Forward current Relative radiant intensity Vs. Ambient temperature Forward current vs. Forward voltage Radiant Pattern Relative radiant intensity Vs. Distance - 2-