KODENSHI EL-313 Infrared emitting diodes(gaas) Datasheet

Infrared Emitting Diodes(GaAs)
KODENSHI
EL-313
DIMENSIONS
(Unit : mm)
The EL-313 is a high-power GaAs IRED mounted in a
clear side-viewing package. This IRED is both
compact and easy to mount.
FEATURES
•Compact plastic mold type
APPLICATIONS
•Optical switches
•Transmission sensors
MAXIMUM RATINGS
Item
Reverse voltage
Forward current
Power dissipation
Pulse forward current *1
Operating temp.
Storage temp.
Soldering temp. *2
(Ta=25℃)
Symbol
Rating
Unit
VR
IF
PD
IFP
Topr.
Tstg.
Tsol.
4
50
100
1
-20~+85
-30~+85
240
V
mA
mW
A
℃
℃
℃
*1. pulse width :tw ≦100 μ
sec.period :T=10msec
*2. For MAX.5 seconds at the position of 2 mm from the package
ELECTRO-OPTICAL CHARACTERISTICS
Item
Forward voltage
Reverse current
Peak emission wavelength
Radiant intensity *3
Half angle
(Ta=25℃)
Symbol
Conditions
VF
IR
λp
PO
Δθ
IF=30mA
VR=4V
IF=20mA
IF=30mA
Min.
Typ.
Max.
Unit.
1.2
1.5
10
V
μ
A
nm
mW
deg.
940
2.0
±20
*3. Exclusive PT r is used as detector
- 1-
Infrared Emitting Diodes(GaAs)
EL-313
Power dissipation Vs.
Ambient temperature
Relative intensity Vs.
Wavelength
Radiant intensity Vs.
Forward current
Relative radiant intensity Vs.
Ambient temperature
Forward current vs.
Forward voltage
Radiant Pattern
Relative radiant intensity Vs.
Distance
- 2-
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