DMN3008SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI RDS(ON) max ID max TC = +25°C 4.4mΩ @ VGS = 10V 62A 5.5mΩ @ VGS = 4.5V 56A V(BR)DSS 30V Features and Benefits Low RDS(ON) – Ensures on-state losses are minimized Small, form factor thermally efficient package enables higher density end products Occupies only 33% of the board area occupied by SO-8 enabling smaller end products 100% Unclamped Inductive Switch (UIS) test in production Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Applications Mechanical Data Backlighting Power Management Functions DC-DC Converters Case: POWERDI®3333-8 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See Diagram Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.072 grams (Approximate) POWERDI®3333-8 D Pin 1 S S S G G D D D D S Top View Bottom View Equivalent Circuit Ordering Information (Note 4) Part Number DMN3008SFG-7 DMN3008SFG-13 Notes: Case POWERDI®3333-8 POWERDI®3333-8 Packaging 2,000/Tape & Reel 3,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information POWERDI®3333-8 YYWW ADVANCE INFORMATION Product Summary N08= Product Type Marking Code YYWW = Date Code Marking YY = Last Digit of Year (ex: 15 = 2015) WW = Week Code (01 ~ 53) N08 POWERDI is a registered trademark of Diodes Incorporated. DMN3008SFG Document number: DS36748 Rev. 6 - 2 1 of 7 www.diodes.com July 2015 © Diodes Incorporated DMN3008SFG Maximum Ratings (@TA = +25°C, unless otherwise specified.) ADVANCE INFORMATION Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Steady State Continuous Drain Current (Note 6) VGS = 10V TA = +25°C TA = +70°C TA = +25°C TA = +70°C TC = +25°C TC = +70°C t<10s Steady State ID Value 30 ±20 17.6 14.1 ID 23.0 18.4 A A 62 50 80 2 45 101 ID Pulsed Drain Current (10μs pulse, duty cycle = 1%) Maximum Continuous Body Diode Forward Current (Note 6) Avalanche Current, L = 0.1mH Avalanche Energy, L = 0.1mH Units V V IDM IS IAS EAS A A A A mJ Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol TA = +25°C TA = +70°C Steady State t < 10s TA = +25°C TA = +70°C Steady State t < 10s Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Value 0.9 0.6 134 79 2.1 1.3 58 34 4.8 -55 to +150 PD RθJA PD RθJA Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range RθJC TJ, TSTG Units W °C/W °C/W W °C/W °C/W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 30 — — — — — — 10 ±100 V μA nA VGS = 0V, ID = 250μA VDS = 30V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) RDS (ON) 2.3 4.4 5.5 1.2 mΩ VSD — 3.9 4.6 0.75 V Static Drain-Source On-Resistance 1 — — — VDS = VGS, ID = 250μA VGS = 10V, ID = 13.5A VGS = 4.5V, ID = 13.5A VGS = 0V, IS = 1A Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf trr Qrr — — — — — — — — — — — — — — 3,690 530 459 0.9 41 86 9.2 18.6 5.7 14.0 63.7 28.4 19.3 10.7 — — — — — — — — — — — — — — pF pF pF Ω nC nC nC nC ns ns ns ns ns nC Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge Notes: V Test Condition VDS = 10V, VGS = 0V, f = 1MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = 24V, ID = 27A VDD = 15V, VGS = 10V, RL = 1.11Ω, RG = 4.7Ω, ID = 13.5A IF=13.5A, di/dt=100A/μs 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. DMN3008SFG Document number: DS36748 Rev. 6 - 2 2 of 7 www.diodes.com July 2015 © Diodes Incorporated DMN3008SFG 30 ID, DRAIN CURRENT (A) VGS = 4.5V 25 ID, DRAIN CURRENT (A) VGS = 4.0V VGS = 3.0V VGS = 2.5V 10.0 8.0 6.0 4.0 2.0 0.0 20 T A = 150°C TA = 125°C 15 T A = 85°C 10 VGS = 2.0V TA = 25°C TA = -55°C 5 VGS = 1.8V 0 0 0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristic 2 0 0.5 1 1.5 2 2.5 3 3.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 4 0.03 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.006 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () VDS = 5.0V VGS = 10V 22.0 20.0 18.0 16.0 14.0 12.0 0.0055 0.025 0.005 VGS = 4.5V 0.0045 0.02 0.015 0.004 VGS = 10V 0.0035 0.003 ID = 13.5A 0.01 0.005 0.0025 0.002 0 2 0.01 0 0 4 6 8 10 12 14 16 18 20 22 24 26 28 30 ID, DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 2 4 6 8 10 12 14 16 18 VGS, GATE-SOURCE VOLTAGE (V) Figure 4 Typical Transfer Characteristic 20 1.8 VGS = 4.5V 0.009 0.008 R DS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () ADVANCE INFORMATION 30.0 28.0 26.0 24.0 TA = 150°C 0.007 T A = 125°C 0.006 TA = 85°C 0.005 TA = 25°C 0.004 TA = -55°C 0.003 0.002 1.6 VGS = 4.5V ID = 13.5A 1.4 1.2 VGS = 10V ID = 13.5A 1 0.8 0.001 0 0 5 10 15 20 25 ID, DRAIN CURRENT (A) Figure 5 Typical On-Resistance vs. Drain Current and Temperature DMN3008SFG Document number: DS36748 Rev. 6 - 2 30 3 of 7 www.diodes.com 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( C) Figure 6 On-Resistance Variation with Temperature July 2015 © Diodes Incorporated V GS(th), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 1.8 0.01 0.009 0.008 VGS = 4.5V ID = 13.5A 0.007 0.006 0.005 VGS = 10V ID = 13.5A 0.004 0.003 0.002 0.001 0 -50 1.6 1.4 1.2 ID = 1mA 1 ID = 250µA 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 100 125 150 T J, JUNCTION TEMPERATURE ( C) Figure 7 On-Resistance Variation with Temperature -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE ( C) Figure 8 Gate Threshold Variation vs. Ambient Temperature 150 100000 IDSS, DRAIN LEAKAGE CURRENT (nA) 30 25 TA = 150°C IS, SOURCE CURRENT (A) 10000 20 T A = 150°C 15 TA = 125°C TA = 85°C 10 T A = 25°C T A = -55°C 5 0 TA = 125°C 1000 TA = 85°C 100 10 TA = 25°C 1 0.1 0 0.2 0.4 0.6 0.8 1 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9 Diode Forward Voltage vs. Current 10 VGS GATE THRESHOLD VOLTAGE (V) ADVANCE INFORMATION DMN3008SFG 0 5 10 15 20 25 30 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10 Typical Drain-Source Leakage Current vs. Voltage 8 VDS = 24V ID = 27A 6 4 2 0 0 10 20 30 40 50 60 70 80 Qg, TOTAL GATE CHARGE (nC) Figure 11 Gate Charge DMN3008SFG Document number: DS36748 Rev. 6 - 2 90 100 4 of 7 www.diodes.com July 2015 © Diodes Incorporated DMN3008SFG 10000 1000 CT, JUNCTION CAPACITANCE (pF) Ciss RDS(on) Limited -ID, DRAIN CURRENT (A) 100 10 1000 DC PW = 10s 1 Coss 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12 Typical Junction Capacitance PW = 1s PW = 100ms PW = 10ms PW = 1ms TJ(max) = 150°C TA = 25°C VGS = 10V Single Pulse 0.01 DUT on 1 * MRP Board Crss 100 0 0.1 30 0.01 PW = 100µs 0.1 1 10 -V DS, DRAIN-SOURCE VOLTAGE (V) Figure 13 SOA, Safe Operation Area 100 1 r(t), TRANSIENT THERMAL RESISTANCE ADVANCE INFORMATION f = 1MHz D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 RJA(t) = r(t) * RJA RJA = 136°C/W Duty Cycle, D = t1/ t2 Single Pulse 0.001 0.0001 0.001 DMN3008SFG Document number: DS36748 Rev. 6 - 2 0.01 0.1 1 10 t1, PULSE DURATION TIMES (sec) Figure 14 Transient Thermal Resistance 5 of 7 www.diodes.com 100 1000 July 2015 © Diodes Incorporated DMN3008SFG ADVANCE INFORMATION Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. POWERDI®3333-8 A1 A3 A Seating Plane D L(4x) D2 1 Pin #1 ID b2(4x) E E2 e1 8 z(4x) b L1(3x) e POWERDI®3333-8 Dim Min Max Typ A 0.75 0.85 0.80 A1 0.00 0.05 0.02 A3 0.203 b 0.27 0.37 0.32 b2 0.20 D 3.25 3.35 3.30 D2 2.22 2.32 2.27 E 3.25 3.35 3.30 E2 1.56 1.66 1.61 e 0.65 e1 0.79 0.89 0.84 L 0.35 0.45 0.40 L1 0.39 z 0.515 All Dimensions in mm Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. POWERDI®3333-8 X3 X2 8 Y2 X1 Y1 Y3 Y X DMN3008SFG Document number: DS36748 Rev. 6 - 2 Dimensions Value (in mm) C 0.650 X 0.420 X1 0.420 X2 0.230 X3 2.370 Y 0.700 Y1 1.850 Y2 2.250 Y3 3.700 1 C 6 of 7 www.diodes.com July 2015 © Diodes Incorporated DMN3008SFG ADVANCE INFORMATION IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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