DB3, DB4, DC34 Silicon Bidirectional Trigger Diodes These diacs are intended for use in thyristor phase control, circuits for lamp-dimming, universal-motor speed controls, and heat controls. Max. 0.5 Min. 27.5 Max. 1.9 Black Part No. Black "ST" Brand XXX ST Max. 3.9 Min. 27.5 Glass Case DO-35 Dimensions in mm Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Power Dissipation (Ta = 65 OC) Ptot 150 mW Repetitive Peak On-state Current (tp = 20 µs, f = 100 Hz) ITRM 2 A Tj, Tstg - 40 to + 125 Operating Junction and Storage Temperature Range C O Characteristics at Ta = 25 OC Parameter Min. Max. 28 36 30 38 35 45 [|+VBO|-|-VBO|] - 3 V | ΔV ± | 5 - V Output Voltage See diagram 2 VO 5 - V Breakover Current at C = 22 nF IBO - 50 µA Leakage Current at VB = 0.5 VBO max IB - 10 µA Rise Time See diagram 3 tr - 2 µs Breakover Voltage at C = 22 nF, see diagram 1 Symbol DB3 DC34 VBO DB4 Breakover Voltage Symmetry at C = 22 nF, see diagram 1 Dynamic Breakover Voltage at ΔI = [IBO to IF = 10 mA] Unit V DB3, DB4, DC34