Rohm DTA115TE -100ma / -50v digital transistors (with built-in resistors) Datasheet

-100mA / -50V Digital transistors
(with built-in resistors)
DTA115TM / DTA115TE / DTA115TUA / DTA115TKA
 Applications
Inverter, Interface, Driver
 Dimensions (Unit : mm)
DTA115TM
0.2
0.8
1.2
(3)
(1)(2)
0.22
0.2
 Features
1) Built-in bias resistors enable the configuration of an inverter circuit
without connecting external input resistors.
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input, and
parasitic effects are almost completely eliminated.
3) Only the on / off conditions need to be set for operation, making
the device design easy.
4) Higher mounting densities can be achieved.
1.2
0.32
0.4 0.4
0.13
0.5
0.8
(1) Base
(2) Emitter
(3) Collector
ROHM : VMT3
Abbreviated symbol : 99
DTA115TE
0.7
1.6
0.55
0.3
0.8
(2)
1.6
(3)
(1)
0.2
0.2
0.15
0.5 0.5
ROHM : EMT3
EIAJ : SC-75A
 Packaging specifications
Package
VMT3
EMT3
UMT3
SMT3
Packaging type
Taping
Taping
Taping
Taping
Code
T2L
TL
T106
T146
Basic ordering
Part No. unit (pieces)
8000
3000
3000
3000
−
−
−
−
−
0.1Min.
 Structure
PNP epitaxial planar silicon transistor
(Resistor built-in type)
1.0
Abbreviated symbol : 99
DTA115TUA
2.0
(1) Emitter
(2) Base
(3) Collector
0.9
0.2
0.3
0.7
DTA115TE
−
DTA115TUA
−
−
DTA115TKA
−
−
2.1
(1)
(2)
0.65 0.65
−
ROHM : UMT3
EIAJ : SC-70
−
0.15
1.3
Abbreviated symbol : 99
DTA115TKA
(1) Emitter
(2) Base
(3) Collector
1.1
2.9
 Inner circuit
0.1Min.
DTA115TM
1.25
(3)
0.4
0.8
(3)
1.6
2.8
C
R1
E : Emitter
C : Collector
B : Base
E
(2)
(1)
0.95 0.95
0.15
ROHM : SMT3
EIAJ : SC-59
R1=100kΩ
1.9
Abbreviated symbol : 99
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c 2009 ROHM Co., Ltd. All rights reserved.
○
1/2
0.3Min.
B
(1) Emitter
(2) Base
(3) Collector
2009.06 - Rev.C
DTA115TM / DTA115TE / DTA115TUA / DTA115TKA
Data Sheet
 Absolute maximum ratings (Ta=25C)
Symbol
Limits
Unit
Collector-base voltage
VCBO
−50
V
Collector-emitter voltage
VCEO
−50
V
Emitter-base voltage
VEBO
−5
V
IC
−100
mA
Parameter
Collector current
Collector power
dissipation
DTA115TM / DTA115TE
150
PC
DTA115TUA / DTA115TKA
mW
200
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
 Electrical characteristics (Ta=25C)
Symbol
Min.
Typ.
Max.
Unit
Collector-base breakdown voltage
BVCBO
−50
−
−
V
IC= −50μA
Collector-emitter breakdown voltage
BVCEO
−50
−
−
−5
−
−
V
V
IC= −1mA
Emitter-base breakdown voltage
BVEBO
ICBO
−
−
−0.5
μA
VCB= −50V
Parameter
Collector cutoff current
Conditions
IE= −50μA
IEBO
−
−
−0.5
μA
VEB= −4V
VCE(sat)
−
−
−0.3
hFE
100
250
600
V
−
IC= −1mA , VCE= −5V
Input resistance
R1
130
kΩ
fT ∗
70
−
100
Transition frequency
250
−
MHZ
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
IC/IB= −1mA/−0.1mA
−
VCE= −10V , IE=5mA , f=100MHZ
∗Characteristics of built-in transistor
1k
VCE=5V
Ta=25°C
Ta=100°C
DC CURRENT GAIN : hFE
500
200
100
Ta= −40°C
50
20
10
5
2
1
10μ
20μ
50μ 100μ 200μ
500μ 1m
2m
5m
10m
COLLECTOR CURRENT : IC (A)
Fig.1 DC current gain
vs. Collector current
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c 2009 ROHM Co., Ltd. All rights reserved.
○
CORRECTOR SATURATION VOLTAGE : VCE(sat) (V)
 Electrical characteristic curves
1
IC/IB=10/1
500m
200m
Ta=100°C
100m
Ta=25°C
50m
20m
Ta= −40°C
10m
5m
2m
1m
10μ
20μ
50μ 100μ 200μ
500μ 1m
2m
5m
10m
COLLECTOR CURRENT : IC (A)
Fig.2 Collector-Emitter saturation voltage
vs. Collector current
2/2
2009.06 - Rev.C
Notice
Notes
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