Siemens BC857CW Pnp silicon af transistors (for af input stages and driver applications high current gain low collector-emitter saturation voltage) Datasheet

PNP Silicon AF Transistors
BC 856W ... BC 860W
Features
●
●
●
●
●
For AF input stages and driver applications
High current gain
Low collector-emitter saturation voltage
Low noise between 30 Hz and 15 kHz
Complementary types: BC 847W, BC 848W,
BC 849W, BC 850W (NPN)
Type
Marking
Ordering Code
(tape and reel)
BC 856 AW
BC 856 BW
BC 857 AW
BC 857 BW
BC 857 CW
BC 858 AW
BC 858 BW
BC 858 CW
BC 859 AW
BC 859 BW
BC 859 CW
BC 860 BW
BC 860 CW
3As
3Bs
3Es
3Fs
3Gs
3Js
3Ks
3Ls
4As
4Bs
4Cs
4Fs
4Gs
Q62702-C2335
Q62702-C2292
Q62702-C2293
Q62702-C2294
Q62702-C2295
Q62702-C2296
Q62702-C2297
Q62702-C2298
Q62702-C2299
Q62702-C2300
Q62702-C2301
Q62702-C2302
Q62702-C2303
1)For
Pin Configuration
1
2
3
B
E
C
Package1)
SOT-323
detailed information see chapter Package Outlines.
Semiconductor Group
1
04.96
BC 856W ... BC 860W
Maximum Ratings
Description
Symbol
BC 856W BC 857W BC 858W Unit
BC 860W BC 859W
Collector-emitter voltage
VCEO
65
45
30
V
Collector-base voltage
VCBO
80
50
30
V
Collector-emitter voltage
VCES
80
50
30
V
Emitter-base voltage
VEBO
5
5
5
V
Collector current
IC
100
mA
Collector peak current
ICM
200
mA
Total power dissipation, TS = 115 ˚C
Ptot
250
mW
Junction temperature
Tj
150
˚C
Storage temperature range
Tstg
–65 to 150
˚C
Thermal Resistance
Junction - ambient1)
Rth JA
≤
240
K/W
Junction - soldering point
Rth JS
≤
105
K/W
Semiconductor Group
2
BC 856W ... BC 860W
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
65
45
30
–
–
–
–
–
–
Collector-base breakdown voltage
V(BR)CB0
IC = 10 µA
BC 856W
BC 857W, BC 860W
BC 858W, BC 859W
80
50
30
–
–
–
–
–
–
Collector-emitter breakdown voltage
IC = 10 µA, VBE = 0
BC 856W
BC 857W, BC 860W
BC 858W, BC 859W
V(BR)CES
80
50
30
–
–
–
–
–
–
Emitter-base breakdown voltage
IE = 1 µA
V(BR)EB0
5
–
–
Collector cutoff current
VCB = 30 V
VCB = 30 V, TA = 150 ˚C
ICB0
–
–
–
–
15
5
DC current gain
IC = 10 µA, VCE = 5 V
BC 856 AW … BC 859 AW
BC 856 BW … BC 860 BW
BC 857 CW … BC 860 CW
IC = 2 mA, VCE = 5 V
BC 856 AW … BC 859 AW
BC 856 BW … BC 860 BW
BC 857 CW … BC 860 CW
hFE
Collector-emitter saturation voltage1)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
VCEsat
Base-emitter saturation voltage1)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
VBEsat
Base-emitter voltage
IC = 2 mA, VCE = 5 V
IC = 10 mA, VCE = 5 V
VBE(on)
DC characteristics
Collector-emitter breakdown voltage
IC = 10 mA
BC 856W
BC 857W, BC 860W
BC 858W, BC 859W
1)Pulse
test: t ≤ 300 µs, D = 2 %.
Semiconductor Group
3
V
V(BR)CE0
nA
µA
–
–
–
–
140
250
480
–
–
–
125
220
420
180
290
520
250
475
800
–
–
75
250
300
650
–
–
700
850
–
–
600
–
650
–
750
820
mV
BC 856W ... BC 860W
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
AC characteristics
Transition frequency
IC = 20 mA, VCE = 5 V, f = 100 MHz
fT
–
250
–
MHz
Output capacitance
VCB = 10 V, f = 1 MHz
Cobo
–
3
–
pF
Input capacitance
VCB = 0.5 V, f = 1 MHz
Cibo
–
10
–
Short-circuit input impedance
IC = 2 mA, VCE = 5 V, f = 1 kHz
BC 856 AW … BC 859 AW
BC 856 BW … BC 860 BW
BC 857 CW … BC 860 CW
h11e
Open-circuit reverse voltage transfer ratio
IC = 2 mA, VCE = 5 V, f = 1 kHz
BC 856 AW … BC 859 AW
BC 856 BW … BC 860 BW
BC 857 CW … BC 860 CW
h12e
Short-circuit forward current transfer ratio
IC = 2 mA, VCE = 5 V, f = 1 kHz
BC 856 AW … BC 859 AW
BC 856 BW … BC 860 BW
BC 857 CW … BC 860 CW
h21e
Open-circuit output admittance
IC = 2 mA, VCE = 5 V, f = 1 kHz
BC 856 AW … BC 859 AW
BC 856 BW … BC 860 BW
BC 857 CW … BC 860 CW
h22e
Noise figure
IC = 0.2 mA, VCE = 5 V, RS = 2 kΩ
f = 30 Hz … 15 kHz
BC 859W
BC 860W
BC 859W
f = 1 kHz, ∆ f = 200 Hz
BC 860W
F
Equivalent noise voltage
IC = 0.2 mA, VCE = 5 V, RS = 2 kΩ
f = 10 Hz … 50 Hz
BC 860W
Vn
Semiconductor Group
kΩ
–
–
–
–
–
–
10– 4
–
–
–
1.5
2.0
3.0
–
–
–
–
–
–
–
200
330
600
–
–
–
µS
–
–
–
18
30
60
–
–
–
dB
–
–
–
–
1.2
1.0
1.0
1.0
4
3
4
4
µV
–
4
2.7
4.5
8.7
–
0.110
BC 856W ... BC 860W
Total power dissipation Ptot = f (TA*; TS)
* Package mounted on epoxy
Collector-base capacitance CCB0 = f (VCB0)
Emitter-base capacitance CEB0 = f (VEB0)
Permissible pulse load Ptot max/Ptot DC = f (tp)
Transition frequency fT = f (IC)
VCE = 5 V
Semiconductor Group
5
BC 856W ... BC 860W
Collector cutoff current ICB0 = f (TA)
VCB = 30 V
Collector-emitter saturation voltage
IC = f (VCEsat), hFE = 20
DC current gain hFE = f (IC)
VCE = 5 V
Base-emitter saturation voltage
IC = f (VBEsat), hFE = 20
Semiconductor Group
6
BC 856W ... BC 860W
h parameter he = f (IC) normalized
VCE = 5 V
h parameter he = f (VCE) normalized
IC = 2 mA
Noise figure F = f (VCE)
IC = 0.2 mA, RS = 2 kΩ, f = 1 kHz
Noise figure F = f (f)
IC = 0.2 mA, VCE = 5 V, RS = 2 kΩ
Semiconductor Group
7
BC 856W ... BC 860W
Noise figure F = f (IC)
VCE = 5 V, f = 120 Hz
Noise figure F = f (IC)
VCE = 5 V, f = 1 kHz
Noise figure F = f (IC)
VCE = 5 V, f = 10 kHz
Semiconductor Group
8
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