D2084UK MECHANICAL DATA TetraFET 100W – 28V – 900MHz B C (2 pls) 2 3 1 H DIM A B C D E F G H I J K M N O P G (typ) P (2 pls) A D 4 5 E (4 pls) F I N O M J K mm 19.05 10.77 45° 9.78 5.71 27.94 1.52R 10.16 22.22 0.13 2.72 1.70 5.08 34.03 1.57R Tol. 0.50 0.13 5° 0.13 0.13 0.13 0.13 0.13 MAX 0.02 0.13 0.13 0.50 0.13 0.08 Inches 0.75 0.424 45° 0.385 0.225 1.100 0.060R 0.400 0.875 0.005 0.107 0.067 0.200 1.340 0.062R Tol. 0.020 0.005 5° 0.005 0.005 0.005 0.005 0.005 MAX 0.001 0.005 0.005 0.020 0.005 0.003 PIN 1 SOURCE (COMMON) PIN 2 DRAIN 1 PIN 3 DRAIN 2 PIN 4 GATE 2 PIN 5 GATE 1 ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit PER SIDE BVDSS Drain–Source Breakdown Voltage I = 100mA IDSS Zero Gate Voltage Drain Current V = 28V 4 mA IGSS Gate Leakage Current V = 20V 1 µA VGS(th) Gate Threshold Voltage I = 10mA 7 V gm * Ciss Input Capacitance VDS = 0V Coss Output Capacitance Crss VGS(th)match V = 10V V 65 1 I = 3A 3.2 mhos 170 pF V = 28V 68 pF Reverse Transfer Capacitance V = 28V 3.6 pF Gate Threshold Matching Voltage ID = 10mA Between Sides VDS = VGS T = 300µS VGS = -5V 0.1 V TOTAL DEVICE PO = 100W f = 900MHz V = 28V IDQ = 3A Thermal Resistance = 0.6 °C / W HAZARDOUS MATERIAL WARNING The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area. THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE. Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 5/96