SuperFET
TM
FCI11N60
600V N-Channel MOSFET
Features
Description
• 650V @TJ = 150°C
SuperFETTM is, Farichild’s proprietary, new generation of high
voltage MOSFET family that is utilizing an advanced charge
balance mechanism for outstanding low on-resistance and
lower gate charge performance.
• Typ. RDS(on) = 0.32Ω
• Ultra Low Gate Charge (typ. Qg = 40nC)
• Low Effective Output Capacitance (typ. Cosseff. = 95pF)
This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system miniaturization and higher efficiency.
• 100% Avalanche Tested
D
{
z
G{
G D S
z
z
{
S
Absolute Maximum Ratings
Symbol
Parameter
VDSS
Drain-Source Voltage
ID
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM
Drain Current
- Pulsed
(Note 1)
FCI11N60
Unit
600
V
11
7
A
A
33
A
± 30
V
340
mJ
VGSS
Gate-Source voltage
EAS
Single Pulsed Avalanche Energy
(Note 2)
IAR
Avalanche Current
(Note 1)
11
A
EAR
Repetitive Avalanche Energy
(Note 1)
12.5
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
PD
Power Dissipation
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
(TC = 25°C)
- Derate above 25°C
4.5
V/ns
125
1.0
W
W/°C
-55 to +150
°C
300
°C
Thermal Characteristics
Symbol
Parameter
FCI11N60
Unit
RθJC
Thermal Resistance, Junction-to-Case
1.0
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
62.5
°C/W
©2005 Fairchild Semiconductor Corporation
FCI11N60 Rev. A1
1
www.fairchildsemi.com
FCI11N60 600V N-Channel MOSFET
July 2005
Device Marking
FCI11N60
Device
Package
Reel Size
Tape Width
Quantity
FCI11N60
I2-PAK
--
--
50
Electrical Characteristics
Symbol
TC = 25°C unless otherwise noted
Parameter
Conditions
Min
Typ
Max Units
VGS = 0V, ID = 250µA, TJ = 25°C
600
--
--
V
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250µA, TJ = 150°C
--
650
--
V
∆BVDSS
/ ∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250µA, Referenced to 25°C
--
0.6
--
V/°C
BVDS
Drain-Source Avalanche Breakdown
Voltage
VGS = 0V, ID = 11A
--
700
--
V
IDSS
Zero Gate Voltage Drain Current
VDS = 600V, VGS = 0V
VDS = 480V, TC = 125°C
---
---
1
10
µA
µA
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30V, VDS = 0V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30V, VDS = 0V
--
--
-100
nA
3.0
--
5.0
V
--
0.32
0.38
Ω
--
9.7
--
S
--
1148
1490
pF
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250µA
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10V, ID = 5.5A
gFS
Forward Transconductance
VDS = 40V, ID = 5.5A
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25V, VGS = 0V,
f = 1.0MHz
--
671
870
pF
--
63
--
pF
Coss
Output Capacitance
VDS = 480V, VGS = 0V, f = 1.0MHz
--
35
--
pF
Coss eff.
Effective Output Capacitance
VDS = 0V to 400V, VGS = 0V
--
95
--
pF
VDD = 300V, ID = 11A
RG = 25Ω
--
34
80
ns
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
(Note 4, 5)
VDS = 480V, ID = 11A
VGS = 10V
(Note 4, 5)
--
98
205
ns
--
119
250
ns
--
56
120
ns
--
40
52
nC
--
7.2
--
nC
--
21
--
nC
11
A
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
33
A
VSD
Drain-Source Diode Forward Voltage
VGS = 0V, IS = 11A
--
--
1.4
V
trr
Reverse Recovery Time
390
--
ns
Reverse Recovery Charge
VGS = 0V, IS = 11A
dIF/dt =100A/µs
--
Qrr
--
5.7
--
µC
(Note 4)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. IAS = 5.5A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 11A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
FCI11N60 Rev. A1
2
www.fairchildsemi.com
FCI11N60 600V N-Channel MOSFET
Package Marking and Ordering Information
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
2
10
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
1
10
1
ID , Drain Current [A]
ID, Drain Current [A]
Top :
0
10
10
o
150 C
o
o
25 C
0
10
-55 C
* Note
1. VDS = 40V
2. 250 µs Pulse Test
* Notes :
1. 250 µs Pulse Test
o
2. TC = 25 C
-1
10
-1
10
-1
0
10
2
1
10
10
4
6
8
10
VGS , Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
IDR , Reverse Drain Current [A]
RDS(ON) [Ω],
Drain-Source On-Resistance
1.0
0.8
VGS = 10V
0.6
VGS = 20V
0.4
0.2
1
10
0
10
o
o
150 C
25 C
* Notes :
1. VGS = 0V
2. 250 µs Pulse Test
o
* Note : TJ = 25 C
0.0
-1
0
5
10
15
20
25
30
35
10
40
0.2
0.4
0.6
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
VGS, Gate-Source Voltage [V]
Capacitance [pF]
1000
0
-1
10
Coss
* Notes :
1. VGS = 0 V
2. f = 1 MHz
Ciss
Crss
0
10
1.6
1
10
VDS = 250V
10
VDS = 400V
8
6
4
2
* Note : ID = 11A
0
0
5
10
15
20
25
30
35
40
45
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
FCI11N60 Rev. A1
1.4
VDS = 100V
4000
2000
1.2
12
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
3000
1.0
Figure 6. Gate Charge Characteristics
6000
5000
0.8
VSD , Source-Drain Voltage [V]
3
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FCI11N60 600V N-Channel MOSFET
Typical Performance Characteristics
FCI11N60 600V N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
RDS(ON), (Normalized)
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
1.1
1.0
Notes :
1. VGS = 0 V
0.9
2. ID = 250µA
0.8
-100
-50
0
50
100
150
2.5
2.0
1.5
1.0
* Notes :
1. VGS = 10 V
2. ID = 5.5 A
0.5
0.0
-100
200
-50
0
o
TJ, Junction Temperature [ C]
150
200
Figure 10. Maximum Drain Current
vs. Case Temperature
12.5
2
10
Operation in This Area
is Limited by R DS(on)
10.0
100 us
1
10
ID, Drain Current [A]
ID, Drain Current [A]
100
o
Figure 9. Maximum Safe Operating Area
1 ms
10 ms
DC
0
10
* Notes :
o
1. TC = 25 C
-1
10
-2
0
10
7.5
5.0
2.5
o
2. TJ = 150 C
3. Single Pulse
10
50
TJ, Junction Temperature [ C]
1
2
10
0.0
25
3
10
10
50
75
100
125
150
o
VDS, Drain-Source Voltage [V]
TC, Case Temperature [ C]
Figure 11. Transient Thermal Response Curve
10
0
ZθJC(t), Thermal Response
D = 0 .5
0 .2
10
* N o te s :
o
1 . Z θ JC ( t) = 1 .0 C /W M a x.
0 .1
-1
2 . D u ty F a c to r, D = t 1 /t 2
0 .0 5
3 . T J M - T C = P D M * Z θ JC ( t)
0 .0 2
0 .0 1
PDM
s in g le p u ls e
10
t1
-2
10
-5
10
-4
10
-3
10
-2
10
t2
-1
10
0
10
1
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
FCI11N60 Rev. A1
4
www.fairchildsemi.com
FCI11N60 600V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
VGS
Same Type
as DUT
50KΩ
200nF
12V
Qg
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
VDS
RG
RL
VDS
90%
VDD
VGS
VGS
DUT
10V
10%
td(on)
tr
td(off)
t on
tf
t off
Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD
L
VDS
BVDSS
IAS
ID
RG
VDD
tp
FCI11N60 Rev. A1
VDS (t)
VDD
DUT
10V
ID (t)
tp
5
Time
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FCI11N60 600V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
FCI11N60 Rev. A1
6
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I2-PAK
4.50 ±0.20
(0.40)
9.90 ±0.20
+0.10
MAX13.40
9.20 ±0.20
(1.46)
1.20 ±0.20
1.30 –0.05
0.80 ±0.10
2.54 TYP
10.08 ±0.20
1.47 ±0.10
MAX 3.00
(0.94)
13.08 ±0.20
)
5°
(4
1.27 ±0.10
+0.10
0.50 –0.05
2.54 TYP
2.40 ±0.20
10.00 ±0.20
Dimensions in Millimeters
FCI11N60 Rev. A1
7
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FCI11N60 600V N-Channel MOSFET
Mechanical Dimensions
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or system whose failure to perform can be reasonably expected
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affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I16
8
FCI11N60 Rev. A1
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FCI11N60 600V N-Channel MOSFET
TRADEMARKS