JMNIC BFR520 Npn 9 ghz wideband transistor Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
BFR520
NPN 9 GHz wideband transistor
Product specification
File under Discrete Semiconductors, SC14
September 1995
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR520
telephones (CT1, CT2, DECT, etc.),
radar detectors, pagers and satellite
TV tuners (SATV) and repeater
amplifiers in fibre-optic systems.
FEATURES
• High power gain
• Low noise figure
• High transition frequency
• Gold metallization ensures
excellent reliability.
The transistor is encapsulated in a
plastic SOT23 envelope.
3
fpage
PINNING
1
DESCRIPTION
PIN
The BFR520 is an npn silicon planar
epitaxial transistor, intended for
applications in the RF frontend in
wideband applications in the GHz
range, such as analog and digital
cellular telephones, cordless
DESCRIPTION
2
Top view
MSB003
Code: N28
1
base
2
emitter
3
collector
Fig.1 SOT23.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
−
−
20
V
RBE = 0
−
−
15
V
VCBO
collector-base voltage
VCES
collector-emitter voltage
IC
DC collector current
−
−
70
mA
Ptot
total power dissipation
up to Ts = 97 °C; note 1
−
−
300
mW
hFE
DC current gain
IC = 20 mA; VCE = 6 V
60
120
250
Cre
feedback capacitance
IC = ic = 0; VCB = 6 V; f = 1 MHz
−
0.4
−
fT
transition frequency
IC = 20 mA; VCE = 6 V; f = 1 GHz
−
9
−
GHz
GUM
maximum unilateral
power gain
IC = 20 mA; VCE = 6 V;
Tamb = 25 °C; f = 900 MHz
−
15
−
dB
IC = 20 mA; VCE = 6 V;
Tamb = 25 °C; f = 2 GHz
−
9
−
dB
pF
S212
insertion power gain
IC = 20 mA; VCE = 6 V;
Tamb = 25 °C; f = 900 MHz
13
14
−
dB
F
noise figure
Γs = Γopt; IC = 5 mA; VCE = 6 V;
Tamb = 25 °C; f = 900 MHz
−
1.1
1.6
dB
Γs = Γopt; IC = 20 mA; VCE = 6 V;
Tamb = 25 °C; f = 900 MHz
−
1.6
2.1
dB
Γs = Γopt; IC = 5 mA; VCE = 8 V;
Tamb = 25 °C; f = 2 GHz
−
1.9
−
dB
Note
1. Ts is the temperature at the soldering point of the collector tab.
September 1995
2
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR520
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
20
V
VCES
collector-emitter voltage
RBE = 0
−
15
V
VEBO
emitter-base voltage
open collector
−
2.5
V
IC
DC collector current
−
70
mA
Ptot
total power dissipation
−
300
mW
Tstg
storage temperature
−65
150
°C
Tj
junction temperature
−
175
°C
up to Ts = 97 °C; note 1
THERMAL RESISTANCE
SYMBOL
Rth j-s
PARAMETER
from junction to soldering point (note 1)
Note
1. Ts is the temperature at the soldering point of the collector tab.
September 1995
3
THERMAL RESISTANCE
260 K/W
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR520
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = 6 V
−
−
50
hFE
DC current gain
IC = 20 mA; VCE = 6 V
60
120
250
Ce
emitter capacitance
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
−
1
−
pF
Cc
collector capacitance
IE = ie = 0; VCB = 6 V; f = 1 MHz
−
0.5
−
pF
Cre
feedback capacitance
IC = 0; VCB = 6 V; f = 1 MHz
−
0.4
−
pF
fT
transition frequency
IC = 20 mA; VCE = 6 V; f = 1 GHz
−
9
−
GHz
GUM
maximum unilateral
power gain (note 1)
IC = 20 mA; VCE = 6 V;
Tamb = 25 °C; f = 900 MHz
−
15
−
dB
IC = 20 mA; VCE = 6 V;
Tamb = 25 °C; f = 2 GHz
−
9
−
dB
nA
S212
insertion power gain
IC = 20 mA; VCE = 6 V;
Tamb = 25 °C; f = 900 MHz
13
14
−
dB
F
noise figure
Γs = Γopt; IC = 5 mA; VCE = 6 V;
Tamb = 25 °C; f = 900 MHz
−
1.1
1.6
dB
Γs = Γopt; IC = 20 mA; VCE = 6 V;
Tamb = 25 °C; f = 900 MHz
−
1.6
2.1
dB
Γs = Γopt; IC = 5 mA; VCE = 6 V;
Tamb = 25 °C; f = 2 GHz
−
1.9
−
dB
PL1
output power at 1 dB gain
compression
IC = 20 mA; VCE = 6 V; RL = 50 Ω;
Tamb = 25 °C; f = 900 MHz
−
17
−
dBm
ITO
third order intercept point
note 2
−
26
−
dBm
Notes
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
2
S 21
- dB.
G UM = 10 log ------------------------------------------------------------2
2


1
S
1
–
S
–

11  
22 
2. IC = 20 mA; VCE = 6 V; RL = 50 Ω; Tamb = 25 °C;
fp = 900 MHz; fq = 902 MHz;
measured at f(2p−q) = 898 MHz and f(2q−p) = 904 MHz.
September 1995
4
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR520
MRA703
MRA702 - 1
250
400
handbook,
halfpage
handbook, halfpage
P
tot
(mW)
hFE
200
300
150
200
100
100
50
0
10−2
0
0
50
100
150
200
10−1
10 I (mA) 102
C
1
T ( o C)
s
VCE = 6 V.
Fig.3
Fig.2 Power derating curve.
MRA705
MRA704
0.6
DC current gain as a function of collector
current.
12
handbook, halfpage
handbook, halfpage
Cre
(pF)
fT
(GHz)
VCE = 6V
8
0.4
VCE = 3V
4
0.2
0
0
4
8
VCB (V)
0
10−1
12
Fig.5
Feedback capacitance as a function of
collector-base voltage.
September 1995
10
IC (mA)
102
Tamb = 25 °C; f = 1 GHz.
iC = 0; f = 1 MHz.
Fig.4
1
5
Transition frequency as a function of
collector current.
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR520
MRA706
MRA707
25
25
handbook,
gain halfpage
(dB)
gain
(dB)
20
20
MSG
Gmax
15
15
GUM
Gmax
10
10
GUM
5
5
0
0
0
10
20
IC (mA)
30
VCE = 6 V; f = 900 MHz.
0
10
20
IC (mA)
30
VCE = 6 V; f = 2 GHz.
Fig.6 Gain as a function of collector current.
Fig.7 Gain as a function of collector current.
MRA708
50
MRA709
50
handbook, halfpage
handbook, halfpage
gain
(dB)
gain
(dB)
40
40
GUM
GUM
30
30
MSG
MSG
20
20
Gmax
Gmax
10
0
10
102
103
f (MHz)
10
0
10
104
VCE = 6 V; Ic = 5 mA.
103
f (MHz)
104
VCE = 6 V; Ic = 20 mA.
Fig.8 Gain as a function of frequency.
September 1995
102
Fig.9 Gain as a function of frequency.
6
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
MRA714
5
handbook, halfpage
Fmin
(dB)
4
f = 900 MHz
BFR520
MRA715
20
Gass
handbook, halfpage
(dB)
15
(dB)
4
5
Fmin
IC = 5 mA
20 mA
20
Gass
(dB)
15
Gass
1000 MHz
Gass
3
10
3
10
5
2
5
0
1
2000 MHz
2
2000 MHz
1000 MHz
1
Fmin
20 mA
900 MHz
Fmin
0
5 mA
500 MHz
−5
102
0
1
10
IC (mA)
0
102
VCE = 6 V.
103
VCE = 6 V.
Fig.10 Minimum noise figure and associated
available gain as functions of collector
current.
Fig.11 Minimum noise figure and associated
available gain as functions of frequency.
stability
circle
handbook, full pagewidth
90°
1.0
1
135°
0.8
45°
2
0.5
pot. unst.
region
0.6
Fmin = 1. 1 dB
0.2
0.4
5
ΓOPT
180°
0.2
0
0.5
1
0.2
2
5
0°
0
F = 1.5 dB
F = 2 dB
5
0.2
F = 3 dB
−135°
0.5
2
−45°
1
MRA716
Zo = 50 Ω.
VCE = 6 V; IC = 5 mA; f = 900 MHz.
−90°
Fig.12 Noise circle figure.
September 1995
f (MHz)
−5
104
7
1.0
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR520
90°
handbook, full pagewidth
1.0
1
135°
0.8
45°
2
0.5
0.6
F = 3 dB
F = 2.5 dB
F = 2 dB
Fmin = 1. 9 dB
0.2
ΓMS
180°
0.5
0
Gmax = 9.3 dB
ΓOPT
1
0.4
5
0.2
2
5
0°
0
G = 9 dB
5
0.2
G = 8 dB
G = 7 dB
−135°
0.5
2
−45°
1
MRA717
−90°
Zo = 50 Ω.
VCE = 6 V; IC = 5 mA; f = 2000 MHz.
Fig.13 Noise circle figure.
September 1995
8
1.0
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR520
90°
handbook, full pagewidth
1.0
1
135°
0.8
45°
2
0.5
0.6
0.2
0.4
5
0.2
3 GHz
180°
0.2
0
0.5
1
2
5
0°
0
40 MHz
5
0.2
0.5
−135°
2
−45°
1
MRA710
−90°
VCE = 6 V; IC = 20 mA.
Zo = 50 Ω.
Fig.14 Common emitter input reflection coefficient (S11).
90°
handbook, full pagewidth
135°
45°
40 MHz
3 GHz
180°
50
40
30
20
0°
10
−135°
−45°
−90°
MRA711
VCE = 6 V; IC = 20 mA.
Fig.15 Common emitter forward transmission coefficient (S21).
September 1995
9
1.0
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR520
90°
handbook, full pagewidth
135°
45°
3 GHz
40 MHz
180°
0.5
0.4
0.3
0.2
0°
0.1
−135°
−45°
−90°
MRA712
VCE = 6 V; IC = 20 mA.
Fig.16 Common emitter reverse transmission coefficient (S12).
90°
handbook, full pagewidth
1.0
1
135°
0.8
45°
2
0.5
0.6
0.2
0.4
5
0.2
180°
0.2
0
0.5
1
2
5
0°
0
40 MHz
3 GHz
5
0.2
−135°
0.5
2
−45°
1
MRA713
−90°
VCE = 6 V; IC = 20 mA.
Zo = 50 Ω.
Fig.17 Common emitter output reflection coefficient (S22).
September 1995
10
1.0
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR520
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
E
B
A
X
HE
v M A
3
Q
A
A1
1
2
e1
bp
c
w M B
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max.
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.9
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
1.9
0.95
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
97-02-28
SOT23
September 1995
EUROPEAN
PROJECTION
11
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR520
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
September 1995
12
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