Fairchild BC638 Pnp epitaxial silicon transistor Datasheet

BC636/638/640
PNP EPITAXIAL SILICON TRANSISTOR
SWITCHING AND AMPLIFIER APPLICATIONS
• Complement to BC635/637/639
TO-92
ABSOLUTE MAXIMUM RATINGS (TA=25°°C)
Characteristic
Collector Emitter Voltage
at RBE=1Kohm
Collector Emitter Voltage
Collector Emitter Voltage
Symbol
: BC636
: BC638
: BC640
: BC636
: BC638
: BC640
: BC636
: BC638
: BC640
Emitter Base Voltage
Collector Current
Peak Collector Current
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
VCER
VCES
VCEO
VEBO
IC
ICP
IB
PC
TJ
T STG
Rating
Unit
-45
-60
-100
-45
-60
-100
-45
-60
-80
-5
-1
-1.5
-100
1
150
-65 ~ 150
V
V
V
V
V
V
V
V
V
V
A
A
mA
W
°C
°C
1. Emitter 2. Collector 3. Base
ELECTRICAL CHARACTERISTICS (TA=25°°C)
Characteristic
Symbol
Collector-Emitter Breakdown Voltage
: BC636
: BC638
: BC640
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
: BC635
: BC637/BC639
BVCEO
Collector Emitter Saturation Voltage
Base Emitter On Voltage
Current Gain Bandwidth Product
VCE (sat)
VBE (on)
fT
Test Conditions
Min
Typ
Max
IC= -10mA, IB=0
-45
-60
-80
ICBO
IEBO
hFE
VCB= -30V, IE=0
VEB= -5V, IC=0
VCE= -2V, IC= -5mA
VCE= -2V, IC= -150mA
VCE= -2V, IC= -500mA
IC= -500mA, IB= -50mA
VCE= -2V, IC= -500mA
VCE= -5V, IC= -10mA, f=50MHz
-0.1
-0.1
25
40
40
25
Unit
V
V
V
µA
µA
250
160
-0.5
-1
100
V
V
MHz
Rev. B
1999 Fairchild Semiconductor Corporation
BC636/638/640
PNP EPITAXIAL SILICON TRANSISTOR
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effectiveness.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
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changes at any time without notice in order to improve
design.
No Identification Needed
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