DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 BFQ591 NPN 7 GHz wideband transistor Product specification Supersedes data of 2002 Jan 07 2002 Feb 04 Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFQ591 FEATURES PINNING • High power gain PIN • Low noise figure 1 emitter • High transition frequency 2 collector • Gold metallization ensures excellent reliability. 3 base DESCRIPTION APPLICATIONS Intended for applications in the GHz range such as MATV or CATV amplifiers and RF communications subscribers equipment. handbook, halfpage DESCRIPTION 1 NPN wideband transistor in a SOT89 plastic package. Bottom view 2 3 MBK514 MARKING TYPE NUMBER MARKING CODE BFQ591 Fig.1 Simplified outline (SOT89). BCp QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter − − 20 V VCEO collector-emitter voltage open base − − 15 V IC collector current (DC) − − 200 mA W Ptot total power dissipation Ts ≤ 90 °C; note 1 − − 2.25 hFE DC current gain IC = 70 mA; VCE = 8 V 60 90 250 Cre feedback capacitance IC = 0; VCB = 12 V; f = 1 MHz − 0.8 − pF fT transition frequency IC = 70 mA; VCE = 12 V; f = 1 GHz − 7 − GHz GUM maximum unilateral power gain IC = 70 mA; VCE = 12 V; f = 900 MHz; Tamb = 25 °C − 11 − dB |s21|2 insertion power gain IC = 70 mA; VCE = 12 V; f = 900 MHz; Tamb = 25 °C − 10 − dB Note 1. Ts is the temperature at the soldering point of the collector pin. 2002 Feb 04 2 Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFQ591 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 20 V VCEO collector-emitter voltage open base − 15 V VEBO emitter-base voltage open collector − 3 V IC collector current (DC) − 200 mA Ptot total power dissipation − 2.25 W Tstg storage temperature −65 +150 °C Tj junction temperature − 175 °C Ts ≤ 90 °C; note 1 Note 1. Ts is the temperature at the soldering point of the collector pin. THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering point CONDITIONS Ts ≤ 90 °C; note 1 Note 1. Ts is the temperature at the soldering point of the collector pin. 2002 Feb 04 3 VALUE UNIT 38 K/W Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFQ591 CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)CBO collector-base breakdown voltage IC = 0.1 mA; IE = 0 − − 20 V V(BR)CES collector-emitter breakdown voltage IC = 0.1 mA; IB = 0 − − 15 V V(BR)EBO emitter-base breakdown voltage IE = 0.1 mA; IC = 0 − − 3 V ICBO collector-base leakage current IE = 0; VCB = 10 − − 100 nA hFE DC current gain IC = 70 mA ; VCE = 8 V 60 90 250 Cre feedback capacitance IC = 0; VCB = 12 V; f = 1 MHz − 0.8 − pF fT transition frequency IC = 70 mA; VCE = 12 V; f = 1 GHz − 7 − GHz GUM maximum unilateral power gain; note 1 IC = 70 mA; VCE = 12 V; Tamb = 25 °C − 11 − dB f = 900 MHz − 5.5 − dB |s21|2 insertion power gain IC = 70 mA; VCE = 12 V; f = 1 GHz; Tamb = 25 °C − 10 − dB Vo output voltage note 2 − 700 − mV f = 2 GHz Notes 2 s 21 1. GUM is the maximum unilateral power gain, assuming s12 is zero and G UM = 10 log ------------------------------------------------------- dB . 2 2 ( 1 – s 11 ) ( 1 – s 22 ) 2. dim = 60 dB (DIN45004B); Vp = Vo; Vq = Vo −6 dB; fp = 795.25 MHz; fq = 803.25 MHz; fr = 803.25 MHz; measured at f(p+q+r) = 793.25 MHz. 2002 Feb 04 4 Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFQ591 MLD796 3 MRA749 250 handbook, halfpage handbook, halfpage hFE Ptot (W) 200 2 150 100 1 50 0 10−2 0 50 0 100 150 Ts (°C) 200 10−1 1 10 IC (mA) 102 VCE = 12 V. Fig.3 DC current gain as a function of collector current; typical values. Fig.2 Power derating curve. MLD797 1.2 MLD798 8 handbook, halfpage handbook, halfpage Cre fT (GHz) (pF) 6 0.8 4 0.4 2 0 0 4 0 8 12 VCB (V) 10 1 16 IC = 0; f = 1 MHz. VCE = 12 V; f = 1 GHz. Fig.4 Fig.5 Feedback capacitance as a function of collector-base voltage; typical values. 2002 Feb 04 5 IC (mA) 102 Transition frequency as a function of collector current. Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFQ591 MLD799 gain 10 gain (dB) 20 (dB) 8 15 6 25 handbook, halfpage MLD800 handbook, halfpage MSG GUM Gmax GUM 10 4 5 2 0 0 0 40 80 IC (mA) 40 0 120 VCE = 12 V; f = 900 MHz. VCE = 12 V; f = 2 GHz. Fig.6 Fig.7 Gain as a function of collector current; typical values. MLD801 40 handbook, halfpage gain (dB) 30 MSG 20 GUM Gmax 10 MSG 0 10 102 103 f (MHz) 104 IC = 70 mA; VCE = 12 V. Fig.8 Gain as a function of frequency; typical values. 2002 Feb 04 6 80 IC (mA) 120 Gain as a function of collector current; typical values. Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFQ591 MLD802 −30 MLD803 −30 d2 handbook, halfpage handbook, halfpage dim (dB) (dB) −40 −40 −50 −50 −60 −60 −70 −70 −80 0 40 80 IC (mA) 120 0 40 80 IC (mA) 120 Vo = 700 mV; VCE = 12 V; Tamb = 25 °C; f(p+q+r) = 793.25 MHz. Vo = 316 mV; VCE = 12 V; f(p+q) = 810 MHz. Fig.9 Fig.10 Second order intermodulation distortion as function of collector current; typical values. Intermodulation distortion as function of collector current; typical values. 2002 Feb 04 7 Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFQ591 SPICE parameters for the BFQ591 die. SEQUENCE No. PARAMETER 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19(1) 20(1) 21(1) IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RB IRB RBM RE RC XTB EG XTI CJE VJE MJE TF XTF VTF ITF PTF CJC VJC MJC XCJ TR CJS VJS MJS FC 22 23 24 25 26 27 28 29 30 31 32 33 34 35(1) 36(1) 37(1) 38 VALUE 1.341 123.5 .988 75.85 9.656 232.2 2.134 10.22 1.016 1.992 294.1 211.0 997.2 5.00 1.000 5.00 1.275 920.6 0.000 1.110 3.000 3.821 600.0 348.5 13.60 71.73 10.28 1.929 0.000 1.409 219.4 166.5 2.340 543.7 0.000 750.0 0.000 733.2 UNIT fA − − V mA fA − − − V mA aA − Ω µA Ω Ω Ω − eV − pF mV − ps − V mA deg fF mV − − ps F mV − − L1 LB B L2 B' C' E' C be C Cce LE MBC964 L3 E QLB = 50;QLE = 50;QLB,E(f) = QLB,E√(f/fc); fc = scaling frequency = 1 GHz. Fig.11 Package equivalent circuit SOT89. List of components (see Fig.11) DESIGNATION Note 1. These parameters have not been extracted, the default values are shown. 2002 Feb 04 C cb handbook, halfpage 8 VALUE UNIT Cbe 16 fF Ccb 150 fF Cce 150 fF L1 1 nH L2 0.01 nH L3 1 nH LB 1.2 nH LE 1.2 nH Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFQ591 PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 3 leads SOT89 B D A b3 E HE L 1 2 3 c b2 w M b1 e1 e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A b1 b2 b3 c D E e e1 HE L min. w mm 1.6 1.4 0.48 0.35 0.53 0.40 1.8 1.4 0.44 0.37 4.6 4.4 2.6 2.4 3.0 1.5 4.25 3.75 0.8 0.13 OUTLINE VERSION SOT89 2002 Feb 04 REFERENCES IEC JEDEC EIAJ TO-243 SC-62 9 EUROPEAN PROJECTION ISSUE DATE 97-02-28 99-09-13 Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFQ591 DATA SHEET STATUS DATA SHEET STATUS(1) PRODUCT STATUS(2) DEFINITIONS Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2002 Feb 04 10 Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFQ591 NOTES 2002 Feb 04 11 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: [email protected]. SCA74 © Koninklijke Philips Electronics N.V. 2002 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613516/03/pp12 Date of release: 2002 Feb 04 Document order number: 9397 750 09271