AOD4142 N-Channel SDMOSTM POWER Transistor General Description Features The AOD4142 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications. VDS (V) = 25V ID = 50A RDS(ON) < 5.3mΩ RDS(ON) < 9.8mΩ -RoHS Compliant -Halogen Free* (VGS = 10V) (VGS = 10V) (VGS = 4.5V) 100% UIS Tested! 100% R g Tested! TO-252 D-PAK Top View D Bottom View D G G S G S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage VGS TC=25°C Continuous Drain CurrentG TC=100°C Pulsed Drain Current C Avalanche Current TA=70°C C Repetitive avalanche energy L=50uH C TC=25°C Power Dissipation B TC=100°C Power Dissipation A TA=70°C TA=25°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case B Alpha & Omega Semiconductor, Ltd. Units V ±20 V 50 ID 43 IDM 120 TA=25°C Continuous Drain Current A Maximum 25 A 17 IDSM 13 IAR 50 EAR 63 PD W 25 2.5 PDSM W 1.6 TJ, TSTG -55 to 175 Symbol t ≤ 10s Steady-State Steady-State mJ 50 RθJA RθJC Typ 15 41 2.1 °C Max 20 50 3 Units °C/W °C/W °C/W www.aosmd.com AOD4142 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA 1.2 ID(ON) On state drain current VGS=10V, VDS=5V 120 TJ=55°C 50 VGS=10V, ID=30A TJ=125°C VGS=4.5V, ID=20A µA 100 nA 2 2.5 V 4.4 5.3 6.6 7.9 7.8 9.8 mΩ 1 V 50 A A gFS Forward Transconductance VDS=5V, ID=30A 65 VSD Diode Forward Voltage IS=1A, VGS=0V 0.7 IS Maximum Body-Diode Continuous CurrentG DYNAMIC PARAMETERS Ciss Input Capacitance Units V 10 Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Max 25 VDS=25V, VGS=0V IDSS RDS(ON) Typ mΩ S 1440 1800 2160 pF 310 445 580 pF 170 285 400 pF 0.8 1.6 2.4 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 25 31 37 nC Qg(4.5V) Total Gate Charge 12 15 18 nC Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Qgs Gate Source Charge Qgd Gate Drain Charge VGS=0V, VDS=12.5V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=12.5V, ID=30A 4 4.8 6 nC 5.3 8.9 13 nC tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Body Diode Reverse Recovery Time IF=30A, dI/dt=500A/µs 9.6 12 Qrr Body Diode Reverse Recovery Charge IF=30A, dI/dt=500A/µs 17 21 VGS=10V, VDS=12.5V, RL=0.42Ω, RGEN=3Ω 8 ns 10.4 ns 29 ns 9 ns 14 25 ns nC A: The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allow s it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. *This device is guaranteed green after data code 8X11 (Sep 1ST 2008). Rev1 : Oct 2008 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD4142 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 80 10V 5V VDS=5V 4.5V 80 60 7V ID(A) ID (A) 60 4V 40 40 20 20 125°C VGS=3.5V 25°C 0 0 0 1 2 3 4 0 5 1 12 4 5 Normalized On-Resistance 2 10 VGS=4.5V RDS(ON) (mΩ ) 3 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics 8 6 4 VGS=10V 2 1.8 1.6 VGS=10V, 30A 17 5 2 VGS=4.5V, 20A 10 1.4 1.2 1 0.8 0 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 200 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction 18 Temperature 20 1.0E+02 ID=30A 1.0E+01 43 40 15 1.0E+00 10 IS (A) RDS(ON) (mΩ ) 2 125°C 125°C 1.0E-01 1.0E-02 25°C 1.0E-03 5 1.0E-04 25°C 1.0E-05 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AOD4142 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2800 10 VDS=12.5V ID=30A 2400 Capacitance (pF) VGS (Volts) 8 6 4 Ciss 2000 1600 1200 Coss 800 2 400 Crss 0 0 0 5 10 15 20 25 30 Qg (nC) Figure 7: Gate-Charge Characteristics 35 0 1000.0 10µs RDS(ON) limited 25 100µs DC 1m s10ms 1.0 0.1 TJ(Max)=175°C TC=25°C 0.0 0.01 TJ(Max)=175°C TC=25°C 160 10µs Power (W) ID (Amps) 10 15 20 VDS (Volts) Figure 8: Capacitance Characteristics 200 100.0 10.0 5 17 5 2 10 120 80 40 0.1 1 VDS (Volts) 10 100 0 0.0001 0.001 0.01 0.1 1 10 0 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-to- Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Case (Note F) Zθ JC Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=3°C/W 43 40 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD4142 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 TA=25°C 70 Power Dissipation (W) ID(A), Peak Avalanche Current 80 60 TA=100°C 50 TA=150°C 40 30 20 TA=125°C 50 40 30 20 10 10 0 0 0.000001 0.00001 0.0001 0 0.001 25 50 75 100 150 175 10000 60 TA=25°C 50 1000 40 Power (W) Current rating ID(A) 125 TCASE (°C) Figure 13: Power De-rating (Note F) Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability 30 17 100 5 2 10 20 10 10 1 1E05 0 0 25 50 75 100 125 150 1E- 0.001 0.01 0.1 1 10 100 1000 0 04 Pulse Width (s) 18 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) 175 TCASE (°C) Figure 14: Current De-rating (Note F) Zθ JA Normalized Transient Thermal Resistance 100 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, 43 single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=50°C/W 40 1 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD4142 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 16 12 di/dt=700A/µs 25 125ºC 3 14 10 di/dt=700A/µs 125ºC 2.5 12 6 125ºC 10 trr (ns) 25ºC 15 25ºC 2 0 10 15 20 25 30 S 0 0 5 10 20 25 30 20 2.5 Is=20A 125ºC 8 125º 4 25ºC 2 trr trr (ns) 6 2 15 Irm (A) 25ºC Qrr 15 IB (A) Figure 18: Diode Reverse Recovery Time and Soft Coefficient vs. Conduction Current 10 Is=20A 0.5 25ºC 125ºC 20 Qrr (nC) 1 0 30 IB (A) Figure 17: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current 15 125ºC 2 0 5 1.5 10 125º 1 S 10 5 Irm 0 0 100 200 300 400 500 600 700 0 800 di/dt (A/µ µs) Figure 19: Diode Reverse Recovery Charge and Peak Current vs. di/dt Alpha & Omega Semiconductor, Ltd. 1.5 25ºC S 5 25ºC 8 4 Irm 25 trr 6 4 0 2 10 S 8 Qrr Irm (A) Qrr (nC) 20 5 25ºC 0.5 0 0 100 200 300 400 500 600 700 0 800 di/dt (A/µ µs) Figure 20: Diode Reverse Recovery Time and Soft Coefficient vs. di/dt www.aosmd.com AOD4142 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds Vgs 90% + Vdd DUT VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd L Vgs Ig Alpha & Omega Semiconductor, Ltd. Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com