AOSMD AOD4142 N-channel sdmostm power transistor Datasheet

AOD4142
N-Channel SDMOSTM POWER Transistor
General Description
Features
The AOD4142 is fabricated with SDMOSTM trench
technology that combines excellent RDS(ON) with low gate
charge.The result is outstanding efficiency with controlled
switching behavior. This universal technology is well suited
for PWM, load switching and general purpose applications.
VDS (V) = 25V
ID = 50A
RDS(ON) < 5.3mΩ
RDS(ON) < 9.8mΩ
-RoHS Compliant
-Halogen Free*
(VGS = 10V)
(VGS = 10V)
(VGS = 4.5V)
100% UIS Tested!
100% R g Tested!
TO-252
D-PAK
Top View
D
Bottom View
D
G
G
S
G
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
CurrentG
TC=100°C
Pulsed Drain Current C
Avalanche Current
TA=70°C
C
Repetitive avalanche energy L=50uH C
TC=25°C
Power Dissipation B
TC=100°C
Power Dissipation A
TA=70°C
TA=25°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Case B
Alpha & Omega Semiconductor, Ltd.
Units
V
±20
V
50
ID
43
IDM
120
TA=25°C
Continuous Drain
Current A
Maximum
25
A
17
IDSM
13
IAR
50
EAR
63
PD
W
25
2.5
PDSM
W
1.6
TJ, TSTG
-55 to 175
Symbol
t ≤ 10s
Steady-State
Steady-State
mJ
50
RθJA
RθJC
Typ
15
41
2.1
°C
Max
20
50
3
Units
°C/W
°C/W
°C/W
www.aosmd.com
AOD4142
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
IGSS
Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250µA
1.2
ID(ON)
On state drain current
VGS=10V, VDS=5V
120
TJ=55°C
50
VGS=10V, ID=30A
TJ=125°C
VGS=4.5V, ID=20A
µA
100
nA
2
2.5
V
4.4
5.3
6.6
7.9
7.8
9.8
mΩ
1
V
50
A
A
gFS
Forward Transconductance
VDS=5V, ID=30A
65
VSD
Diode Forward Voltage
IS=1A, VGS=0V
0.7
IS
Maximum Body-Diode Continuous CurrentG
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Units
V
10
Zero Gate Voltage Drain Current
Static Drain-Source On-Resistance
Max
25
VDS=25V, VGS=0V
IDSS
RDS(ON)
Typ
mΩ
S
1440
1800
2160
pF
310
445
580
pF
170
285
400
pF
0.8
1.6
2.4
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
25
31
37
nC
Qg(4.5V) Total Gate Charge
12
15
18
nC
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
VGS=0V, VDS=12.5V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=12.5V, ID=30A
4
4.8
6
nC
5.3
8.9
13
nC
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Body Diode Reverse Recovery Time
IF=30A, dI/dt=500A/µs
9.6
12
Qrr
Body Diode Reverse Recovery Charge IF=30A, dI/dt=500A/µs
17
21
VGS=10V, VDS=12.5V,
RL=0.42Ω, RGEN=3Ω
8
ns
10.4
ns
29
ns
9
ns
14
25
ns
nC
A: The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allow s it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
*This device is guaranteed green after data code 8X11 (Sep 1ST 2008).
Rev1 : Oct 2008
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD4142
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
80
10V
5V
VDS=5V
4.5V
80
60
7V
ID(A)
ID (A)
60
4V
40
40
20
20
125°C
VGS=3.5V
25°C
0
0
0
1
2
3
4
0
5
1
12
4
5
Normalized On-Resistance
2
10
VGS=4.5V
RDS(ON) (mΩ )
3
VGS(Volts)
Figure 2: Transfer Characteristics
VDS (Volts)
Fig 1: On-Region Characteristics
8
6
4
VGS=10V
2
1.8
1.6
VGS=10V, 30A
17
5
2
VGS=4.5V, 20A
10
1.4
1.2
1
0.8
0
0
5
0
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
25
50
75
100
125
150
175
200
Temperature (°C)
0
Figure 4: On-Resistance vs. Junction
18
Temperature
20
1.0E+02
ID=30A
1.0E+01
43
40
15
1.0E+00
10
IS (A)
RDS(ON) (mΩ )
2
125°C
125°C
1.0E-01
1.0E-02
25°C
1.0E-03
5
1.0E-04
25°C
1.0E-05
0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics
www.aosmd.com
AOD4142
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
2800
10
VDS=12.5V
ID=30A
2400
Capacitance (pF)
VGS (Volts)
8
6
4
Ciss
2000
1600
1200
Coss
800
2
400
Crss
0
0
0
5
10
15
20
25
30
Qg (nC)
Figure 7: Gate-Charge Characteristics
35
0
1000.0
10µs
RDS(ON)
limited
25
100µs
DC
1m
s10ms
1.0
0.1
TJ(Max)=175°C
TC=25°C
0.0
0.01
TJ(Max)=175°C
TC=25°C
160
10µs
Power (W)
ID (Amps)
10
15
20
VDS (Volts)
Figure 8: Capacitance Characteristics
200
100.0
10.0
5
17
5
2
10
120
80
40
0.1
1
VDS (Volts)
10
100
0
0.0001
0.001
0.01
0.1
1
10
0
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-to-
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Case (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=3°C/W
43
40
1
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD4142
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
TA=25°C
70
Power Dissipation (W)
ID(A), Peak Avalanche Current
80
60
TA=100°C
50
TA=150°C
40
30
20
TA=125°C
50
40
30
20
10
10
0
0
0.000001
0.00001
0.0001
0
0.001
25
50
75
100
150
175
10000
60
TA=25°C
50
1000
40
Power (W)
Current rating ID(A)
125
TCASE (°C)
Figure 13: Power De-rating (Note F)
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
30
17
100
5
2
10
20
10
10
1
1E05
0
0
25
50
75
100
125
150
1E- 0.001 0.01 0.1
1
10
100 1000
0
04
Pulse Width (s)
18
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
175
TCASE (°C)
Figure 14: Current De-rating (Note F)
Zθ JA Normalized Transient
Thermal Resistance
100
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01,
43 single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=50°C/W
40
1
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD4142
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
16
12
di/dt=700A/µs
25
125ºC
3
14
10
di/dt=700A/µs
125ºC
2.5
12
6
125ºC
10
trr (ns)
25ºC
15
25ºC
2
0
10
15
20
25
30
S
0
0
5
10
20
25
30
20
2.5
Is=20A
125ºC
8
125º
4
25ºC
2
trr
trr (ns)
6
2
15
Irm (A)
25ºC
Qrr
15
IB (A)
Figure 18: Diode Reverse Recovery Time and Soft
Coefficient vs. Conduction Current
10
Is=20A
0.5
25ºC
125ºC
20
Qrr (nC)
1
0
30
IB (A)
Figure 17: Diode Reverse Recovery Charge and
Peak Current vs. Conduction Current
15
125ºC
2
0
5
1.5
10
125º
1
S
10
5
Irm
0
0
100
200
300
400
500
600
700
0
800
di/dt (A/µ
µs)
Figure 19: Diode Reverse Recovery Charge and
Peak Current vs. di/dt
Alpha & Omega Semiconductor, Ltd.
1.5
25ºC
S
5
25ºC
8
4
Irm
25
trr
6
4
0
2
10
S
8
Qrr
Irm (A)
Qrr (nC)
20
5
25ºC
0.5
0
0
100
200
300
400
500
600
700
0
800
di/dt (A/µ
µs)
Figure 20: Diode Reverse Recovery Time and Soft
Coefficient vs. di/dt
www.aosmd.com
AOD4142
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
Vgs
90%
+ Vdd
DUT
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds Isd
L
Vgs
Ig
Alpha & Omega Semiconductor, Ltd.
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
www.aosmd.com
Similar pages