A Product Line of Diodes Incorporated DMP21D0UT 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Max V(BR)DSS RDS(on) Max @ TA = 25°C (Note 4) -20V 495mΩ @ VGS = -4.5V -0.59A 690mΩ @ VGS = -2.5V -0.50A 960mΩ @ VGS = -1.8V -0.42A • • • • • • • • 2 Footprint of just 3mm – less than half the size of SOT23 0.8mm profile – ideal for low profile applications Low Gate Threshold Voltage Fast Switching Speed ESD Protected Gate 3KV Totally Lead-Free & Fully RoHS compliant (Note 1) Halogen and Antimony Free. “Green” Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • • • • • Portable electronics • Case: SOT523 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish ; Solderable per MIL-STD-202, Method 208 Weight: 0.002 grams (approximate) Drain SOT523 D Gate Bottom View ESD PROTECTED TO 3kV Gate Protection Diode S G Top View Internal Schematic Source Equivalent Circuit Ordering Information (Note 3) Part Number DMP21D0UT-7 Notes: Marking PBC Reel size (inches) 7 Tape width (mm) 8 Quantity per reel 3,000 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free. 2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com. 3. For packaging details, go to our website at http://www.diodes.com. Marking Information PBC Date Code Key Year Code Month Code 2011 Y Jan 1 2012 Z Feb 2 DMP21D0UT Datasheet Number: DS35297 Rev. 2 - 2 Mar 3 PBC = Product Type Marking Code YM = Date Code Marking Y = Year (ex: Y = 2011) M = Month (ex: 9 = September) YM 2013 A Apr 4 May 5 2014 B Jun 6 1 of 7 www.diodes.com 2015 C Jul 7 Aug 8 2016 D Sep 9 Oct O 2017 E Nov N Dec D March 2012 © Diodes Incorporated A Product Line of Diodes Incorporated DMP21D0UT Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Drain-Source Voltage Gate-Source Voltage Pulsed Drain Current (Note 6) Thermal Characteristics Unit V V ID -0.59 -0.42 -0.65 A IDM -5.0 A Value 0.24 0.33 525 383 -55 to +150 Unit W W °C/W °C/W °C @TA = 25°C unless otherwise specified Characteristic Power Dissipation (Note 4) Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 4) Thermal Resistance, Junction to Ambient (Note 5) Operating and Storage Temperature Range Notes: Value -20 ±8 TA = 25°C (Note 4) TA = 85°C (Note 4) TA = 25°C (Note 5) Steady State Continuous Drain Current Symbol VDSS VGSS Symbol PD PD RθJA RθJA TJ, TSTG 4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout 5. Device mounted on 25mm X 25mm FR-4 PCB with high coverage of 2oz copper 6. Device mounted on minimum recommended pad layout test board, 10μs pulse duty cycle = 1%. P(pk), PEAK TRANSIENT POWER (W) 10 9 Single Pulse RθJA = 380°C/W RθJA(t) = r(t) * RθJA TJ - TA = P * RθJA(t) 8 7 6 5 4 3 2 1 0 0.0001 0.001 0.01 0.1 1 10 t1, PULSE DURATION TIME (SEC) Fig. 1 Single Pulse Maximum Power Dissipation 100 1,000 r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.9 D = 0.1 D = 0.05 RθJA(t) = r(t) * RθJA RθJA = 380°C/W D = 0.02 0.01 P(pk) D = 0.01 t1 t2 T J - T A = P * RθJA(t) Duty Cycle, D = t1/t2 D = 0.005 D = Single Pulse 0.001 0.000001 0.00001 DMP21D0UT Datasheet Number: DS35297 Rev. 2 - 2 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 2 Transient Thermal Response 2 of 7 www.diodes.com 10 100 1,000 March 2012 © Diodes Incorporated A Product Line of Diodes Incorporated DMP21D0UT Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = 25°C Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -20 - - -1 ±10 V μA μA VGS = 0V, ID = -250μA VDS = -20V, VGS = 0V VGS = ±8V, VDS = 0V VGS(th) - -0.7 V Static Drain-Source On-Resistance RDS (ON) - - |Yfs| VSD 50 - - 495 690 960 -1.2 VDS = VGS, ID = -250μA VGS = -4.5V, ID = -400mA VGS = -2.5V, ID = -300mA VGS = -1.8V, ID = -100mA VDS = -3V, ID = -300mA VGS = 0V, IS = -300mA Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf - 76.5 13.7 10.7 195 1.5 1.0 0.2 0.3 7.1 8.0 31.7 18.5 - Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: - mΩ mS V pF pF pF Ω nC nC nC nC ns ns ns ns Test Condition VDS = -10V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VGS = -8V,VDS = -15V,ID = -1A VGS = -4.5V, VDS = -15V, ID = -1A VDS = -10V, -ID = 1A VGS = -4.5V, RG = 6Ω 7. Short duration pulse test used to minimize self-heating effect. 2.0 2.0 VGS = -4.5V VGS = -4.0V VGS = -2.5V 1.5 -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) VGS = -3.0V VGS = -2.0V VGS = -1.8V 1.0 VGS = -1.5V 0.5 VDS = -5V 1.5 1.0 0.5 T A = 150°C TA = 125°C VGS = -1.2V 0 0 1 2 3 4 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 3 Typical Output Characteristic DMP21D0UT Datasheet Number: DS35297 Rev. 2 - 2 5 3 of 7 www.diodes.com 0 TA = 85°C T A = 25°C TA = -55°C 0 0.5 1.0 1.5 2.0 2.5 -VGS, GATE-SOURCE VOLTAGE (V) Fig. 4 Typical Transfer Characteristic 3.0 March 2012 © Diodes Incorporated A Product Line of Diodes Incorporated 1.0 0.9 0.8 0.7 VGS = -1.8V 0.6 0.5 VGS = -2.5V 0.4 0.3 VGS = -4.5V 0.2 0.1 0 0 0.4 0.8 1.2 1.6 -ID, DRAIN-SOURCE CURRENT (A) Fig. 5 Typical On-Resistance vs. Drain Current and Gate Voltage 2.0 RDSON, DRAIN-SOURCE ON-RESISTANCE (Ω) RDSON , DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 1.7 1.5 1.3 1.1 VGS = -5.0V ID = -500mA 0.9 VGS = -2.5V ID = -250mA 0.7 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) DMP21D0UT 0.5 -50 1.4 VGS = -4.5V 0.6 0.5 T A = 150°C TA = 125°C 0.4 TA = 85°C TA = 25°C 0.3 TA = -55°C 0.2 0.1 0 0 0.4 0.8 1.2 1.6 -ID, DRAIN CURRENT (A) Fig. 6 Typical On-Resistance vs. Drain Current and Temperature 2.0 0.8 0.7 0.6 VGS = -2.5V ID = -250mA 0.5 0.4 0.3 VGS = -5.0V ID = -500mA 0.2 0.1 0 -50 2.0 1.8 1.2 -IS, SOURCE CURRENT (A) -VGS(TH), GATE THRESHOLD VOLTAGE (V) 0.7 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 8 On-Resistance Variation with Temperature -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 On-Resistance Variation with Temperature 1.0 ID = -1mA 0.8 0.6 0.8 ID = -250µA 0.4 1.6 1.4 TA = 25°C 1.2 1.0 0.8 0.6 0.4 0.2 0.2 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 9 Gate Threshold Variation vs. Ambient Temperature DMP21D0UT Datasheet Number: DS35297 Rev. 2 - 2 4 of 7 www.diodes.com 0 0.4 0.6 0.8 1.0 1.2 -VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 10 Diode Forward Voltage vs. Current March 2012 © Diodes Incorporated A Product Line of Diodes Incorporated DMP21D0UT 100,000 1,000 TA = 150°C TA = 125°C 100 10,000 IGSS, LEAKAGE CURRENT (nA) -IDSS, LEAKAGE CURRENT (nA) 10,000 T A = 85°C 10 TA = 150°C T A = 125°C 1,000 100 TA = 25°C 10 0 0.1 0 4 8 12 16 20 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 11 Typical Leakage Current vs. Drain-Source Voltage 10,000 T A = 150°C TA = 125°C 1,000 100 T A = 85°C T A = 25°C 10 TA = -55°C 1 0.1 2 4 6 8 VGS, GATE-SOURCE VOLTAGE (V) Fig.12 Leakage Current vs. Gate-Source Voltage 1,000 CT, JUNCTION CAPACITANCE (pF) IGSS, LEAKAGE CURRENT (nA) 100,000 TA = -55°C 1 T A = 25°C 1 TA = 85°C 0 2 4 6 8 VGS, GATE-SOURCE VOLTAGE (V) Fig.13 Leakage Current vs. Gate-Source Voltage f = 1MHz 100 Ciss Coss 10 Crss 1 0 2 4 6 8 10 12 14 16 18 20 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 14 Typical Junction Capacitance -VGS, GATE-SOURCE VOLTAGE (V) 8 7 6 5 4 3 2 1 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Qg, TOTAL GATE CHARGE (nC) Fig. 15 Gate-Charge Characteristics DMP21D0UT Datasheet Number: DS35297 Rev. 2 - 2 5 of 7 www.diodes.com March 2012 © Diodes Incorporated A Product Line of Diodes Incorporated DMP21D0UT Package Outline Dimensions A SOT523 Dim Min Max Typ A 0.15 0.30 0.22 B 0.75 0.85 0.80 C 1.45 1.75 1.60 D 0.50 ⎯ ⎯ G 0.90 1.10 1.00 H 1.50 1.70 1.60 J 0.00 0.10 0.05 K 0.60 0.80 0.75 L 0.10 0.30 0.22 M 0.10 0.20 0.12 N 0.45 0.65 0.50 0° 8° α ⎯ All Dimensions in mm B C G H K M N J L D Suggested Pad Layout Y Z C X DMP21D0UT Datasheet Number: DS35297 Rev. 2 - 2 Dimensions Value (in mm) Z 1.8 X 0.4 Y 0.51 C 1.3 E 0.7 E 6 of 7 www.diodes.com March 2012 © Diodes Incorporated A Product Line of Diodes Incorporated DMP21D0UT IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2012, Diodes Incorporated www.diodes.com DMP21D0UT Datasheet Number: DS35297 Rev. 2 - 2 7 of 7 www.diodes.com March 2012 © Diodes Incorporated