NXP BF1211WR Rf manual 16th edition Datasheet

RF Manual 16 edition
th
Application and design manual
for High Performance RF products
June 2012
NXP enables you to unleash the performance
of next-generation RF and microwave designs
NXP's RF Manual is one of the most important reference tools on the market for today’s
RF designers. It features our complete range of RF products, from low- to high-power signal
conditioning, organized by application and function, and with a focus on design-in support.
When it comes to RF, the first thing on the designer's mind is to meet the
specified performance. NXP brings clarity to every aspect of your design
challenge, so you can unleash the performance of your RF and microwave
designs. NXP delivers a portfolio of high-performance RF technology that
allows you to differentiate your product – no matter where in the RF world
you are. That’s why customers trust us with their mission-critical designs.
Whether it’s LDMOS and GaN for high-power RF applications or Si and
SiGe:C BiCMOS for your small-signal needs, we’ve got you covered.
Our broad portfolio of far-reaching technologies gives you the freedom
to design with confidence.
Shipping more than four billion RF products annually, NXP is a clear industry
leader in High Performance RF. From satellite receivers, cellular base
stations, and broadcast transmitters to ISM (industrial, scientific, medical)
and aerospace and defense applications, you will find the High Performance
RF products that will help you realize a clear advantage in your products,
your reputation, and your business.
So if you're looking to improve your RF performance, design a highly
efficient signal chain, or break new ground with an innovative ISM
application, NXP will help you unleash the performance of your
next-generation RF and microwave designs.
4
NXP Semiconductors RF Manual 16th edition
What’s new?
This RF Manual provides updated information on RF applications that are
grouped as follows: wireless and broadband communication infrastructure, TV
and satellite, portable devices, automotive, ISM, and aerospace and defense.
We describe in detail the new developments in our core technologies, QUBiC4
(SiGe:C) and LDMOS. We have also added GaN technology to our product
offering; this key technology lets high-power amplifiers deliver very high
efficiency in next-generation wireless communication systems.
New products include GaN power amplifiers, a complete line of overmolded
plastic (OMP) RF power transistors and MMICs, and our eighth generation
LDMOS transistors (Gen8). Next-generation devices and improved products
include GPS LNAs, medium power amplifiers, IF gain blocks, satellite LNB ICs
and CATV modules.
Our portfolio for the wireless communication infrastructure has expanded, with
a comprehensive set of amplifiers (low noise, variable gain, medium power, and
high power Doherty amplifiers), mixers, IQ modulators and synthesizers, so you
can build a highly efficient signal chain for transmit line-ups and receive chains.
The Design Support section is updated and includes all available tools,
documents, materials and links that ease the design-in of our products.
We’re relentless in our commitment to RF innovation, and have the infrastructure and insight to inspire confidence
in your performance-critical applications. We bring focus to complex RF problems so you are free to push the
performance limits of your application, realize your design vision, and gain a competitive edge for your enterprise.
What you are reading is more than a guide, it's a tool that lets you unleash your RF performance: the 16th edition
of the RF Manual.
Kind regards,
John Croteau
Sr. Vice President & General Manager
Business Line High Performance RF
RF Manual web page
www.nxp.com/rfmanual
NXP Semiconductors RF Manual 16th edition
5
Contents
1
Products by application
1.1
Wireless communication infrastructure_______________________________________________________________________________________________________________________________________________________________ 9
1.1.1 Base stations (all cellular standards and frequencies) ______________________________________________________________________________________________________________________________ 9
1.1.2 Point-to-point communications ________________________________________________________________________________________________________________________________________________________________ 12
1.1.3 Repeater ___________________________________________________________________________________________________________________________________________________________________________________________________ 14
Broadband communication infrastructure _________________________________________________________________________________________________________________________________________________________15
1.2.1 CATV optical (optical node with multiple out-ports)________________________________________________________________________________________________________________________________ 15
1.2.2 CATV electrical (line extenders) ______________________________________________________________________________________________________________________________________________________________ 16
TV and satellite____________________________________________________________________________________________________________________________________________________________________________________________________ 17
1.3.1 Network interface module (NIM) for TV reception___________________________________________________________________________________________________________________________________ 17
1.3.2 Basic TV tuner ___________________________________________________________________________________________________________________________________________________________________________________________ 19
1.3.3 Satellite outdoor unit, twin low-noise block (LNB) with discrete components ______________________________________________________________________________________ 20
1.3.4 Satellite outdoor unit, twin low-noise block (LNB) with integrated mixer / oscillator / downconverter __________________________________________________21
1.3.5 Satellite multi-switch box - 4 x 4 (up to 16 x 16) / DiSEqC / SMATV ________________________________________________________________________________________________________ 22
1.3.6 VSAT ________________________________________________________________________________________________________________________________________________________________________________________________________ 23
Portable devices _________________________________________________________________________________________________________________________________________________________________________________________________ 25
1.4.1 GPS __________________________________________________________________________________________________________________________________________________________________________________________________________ 25
1.4.2 FM radio ___________________________________________________________________________________________________________________________________________________________________________________________________26
1.4.3 China Mobile Multimedia Broadcasting (CMMB) in UHF band 470 – 862 MHz _______________________________________________________________________________________27
1.4.4 Cellular receiver ________________________________________________________________________________________________________________________________________________________________________________________28
1.4.5 802.11n DBDC and 802.11ac WLAN ________________________________________________________________________________________________________________________________________________________ 29
1.4.6 Generic RF front-end _______________________________________________________________________________________________________________________________________________________________________________ 30
Automotive __________________________________________________________________________________________________________________________________________________________________________________________________________31
1.5.1 SDARS & HD radio ______________________________________________________________________________________________________________________________________________________________________________________ 31
1.5.2 Remote keyless entry, RF generic front-end with dedicated antenna for reception and transmission ___________________________________________________32
1.5.3 Tire pressure monitoring system _____________________________________________________________________________________________________________________________________________________________ 33
1.5.4 Car radio receiver (CREST ICs: TEF6860HL, TEF6862HL) _______________________________________________________________________________________________________________________ 34
Industrial, scientific & medical (ISM)__________________________________________________________________________________________________________________________________________________________________ 35
1.6.1 Broadcast / ISM _______________________________________________________________________________________________________________________________________________________________________________________ 35
1.6.2 E-metering, RF generic front-end with a single antenna / ZigBee ______________________________________________________________________________________________________________36
1.6.3 RF microwave furnace application____________________________________________________________________________________________________________________________________________________________37
1.6.4 RF plasma lighting ___________________________________________________________________________________________________________________________________________________________________________________ 38
1.6.5 Medical imaging _______________________________________________________________________________________________________________________________________________________________________________________39
1.7
Aerospace and defense __________________________________________________________________________________________________________________________________________________________________________ 40
1.7.1 Microwave products for L- and S-band radar and avionics applications ________________________________________________________________________________________________ 40
1.2
1.3
1.4
1.5
1.6
9
2
Focus applications, products & technologies
2.1
Wireless communication infrastructure_____________________________________________________________________________________________________________________________________________________________ 42
2.1.1 Build a highly efficient signal chain with RF components for transmit line-ups and receive chains ________________________________________________________42
2.1.2 Digital wideband VGAs with high linearity & flexible current settings ___________________________________________________________________________________________________ 44
2.1.3 Doherty amplifier technology for state-of-the-art wireless infrastructure ______________________________________________________________________________________________ 46
2.1.4 The new generation of LDMOS RF power for wireless infrastructures: NXP's Gen8 _____________________________________________________________________________ 48
Broadband communication infrastructure ________________________________________________________________________________________________________________________________________________________ 49
2.2.1 Connecting people, protecting your network : NXP's CATV C-family for the Chinese SARFT standard_________________________________________________49
2.2.2 Highly efficient line-up of 1 GHz GaAs modules for sustainable CATV networks ___________________________________________________________________________________52
TV and satellite___________________________________________________________________________________________________________________________________________________________________________________________________ 54
2.3.1 LNAs with programmable gain & bypass option for improved tuner performance _______________________________________________________________________________ 54
2.3.2 Complete satellite portfolio for all LNB architectures_____________________________________________________________________________________________________________________________ 56
2.3.3 VSAT, 2-way communication via satellite_________________________________________________________________________________________________________________________________________________ 58
2.3.4 Low noise LO generators for microwave & mmWave radios ___________________________________________________________________________________________________________________ 60
Portable devices __________________________________________________________________________________________________________________________________________________________________________________________________ 61
2.4.1 The best reception of GNSS signals with the smallest footprint ______________________________________________________________________________________________________________ 61
Industrial, scientific & medical ___________________________________________________________________________________________________________________________________________________________________________ 63
2.5.1 Medical applications driven by RF power________________________________________________________________________________________________________________________________________________ 63
2.5.2 RF-driven plasma lighting________________________________________________________________________________________________________________________________________________________________________ 64
2.5.3 QUBiC4 Si and SiGe:C transistors for any RF function ____________________________________________________________________________________________________________________________ 65
2.5.4 Building on decades of innovation in microwave and radar ___________________________________________________________________________________________________________________ 66
2.5.5 Digital broadcasting at its best _______________________________________________________________________________________________________________________________________________________________ 68
2.5.6 Setting the benchmark for ultra low-power and high-performance wireless connectivity solutions ______________________________________________________69
Technology __________________________________________________________________________________________________________________________________________________________________________________________________________70
2.6.1 The first mainstream semiconductor company to offer GaN products ___________________________________________________________________________________________________70
2.2
2.3
2.4
2.5
2.6
6
NXP Semiconductors RF Manual 16th edition
42
2.6.2 Completing NXP's RF power transistor offering: products in plastic packages (OMP) ___________________________________________________________________________71
2.6.3 Looking for a leader in SiGe:C? You just found us! __________________________________________________________________________________________________________________________________72
2.6.4 High-performance, small-size packaging enabled by NXP's leadless package platform and WL-CSP technology ________________________________ 74
3
Products by function
75
3.1 New products ______________________________________________________________________________________________________________________________________________________________________________________________________75
3.2 RF diodes ____________________________________________________________________________________________________________________ 78
3.2.1 Varicap diodes _________________________________________________________________________________________________________________________________________________________________________________________78
3.2.2 PIN diodes _______________________________________________________________________________________________________________________________________________________________________________________________79
3.2.3 Band-switch diodes __________________________________________________________________________________________________________________________________________________________________________________81
3.2.4 Schottky diodes ________________________________________________________________________________________________________________________________________________________________________________________81
3.3 RF Bipolar transistors ________________________________________________________________________________________________________________________________________________________________________________________ 82
3.3.1 Wideband transistors ______________________________________________________________________________________________________________________________________________________________________________ 82
3.4 RF ICs _________________________________________________________________________________________________________________________________________________________________________________________________________________ 85
3.4.1 RF MMIC amplifiers and mixers _______________________________________________________________________________________________________________________________________________________________ 85
3.4.2 Wireless infrastructures ICs _____________________________________________________________________________________________________________________________________________________________________ 88
3.4.3 Satellite LNB RF ICs _________________________________________________________________________________________________________________________________________________________________________________ 89
3.4.4 Low-noise LO generators for VSAT and general microwave applications ______________________________________________________________________________________________ 89
3.5 RF MOS transistors ____________________________________________________________________________________________________________________________________________________________________________________________ 90
3.5.1 JFETs _______________________________________________________________________________________________________________________________________________________________________________________________________ 90
3.5.2 MOSFETs __________________________________________________________________________________________________________________________________________________________________________________________________91
3.6 RF Modules ________________________________________________________________________________________________________________________________________________________________________________________________________ 93
3.6.1 CATV push-pulls ______________________________________________________________________________________________________________________________________________________________________________________93
3.6.2 CATV push-pulls 1 GHz ____________________________________________________________________________________________________________________________________________________________________________93
3.6.3 CATV power doublers ______________________________________________________________________________________________________________________________________________________________________________94
3.6.4 CATV optical receivers _____________________________________________________________________________________________________________________________________________________________________________94
3.6.5 CATV reverse hybrids _______________________________________________________________________________________________________________________________________________________________________________94
3.7 RF power transistors __________________________________________________________________________________________________________________________________________________________________________________________ 95
3.7.1 RF power transistors for base stations ____________________________________________________________________________________________________________________________________________________95
3.7.2 RF power transistors for broadcast / ISM applications____________________________________________________________________________________________________________________________ 99
3.7.3 RF power transistors for aerospace and defense __________________________________________________________________________________________________________________________________ 100
3.7.4 Gallium Nitride (GaN) RF power amplifiers ____________________________________________________________________________________________________________________________________________ 101
3.8 Wireless microcontroller chipsets and modules ______________________________________________________________________________________________________________________________________________101
4
Design support
102
4.1
4.2
4.3
4.4
4.5
4.6
Knowing NXP’s RF portfolio _____________________________________________________________________________________________________________________________________________________________________________102
Product selection on NXP.com _________________________________________________________________________________________________________________________________________________________________________102
Product evaluation ____________________________________________________________________________________________________________________________________________________________________________________________102
Additional design-in support ____________________________________________________________________________________________________________________________________________________________________________103
Application notes ______________________________________________________________________________________________________________________________________________________________________________________________103
Simulation models _____________________________________________________________________________________________________________________________________________________________________________________________104
4.6.1 Simulation models for RF power devices _______________________________________________________________________________________________________________________________________________104
4.6.2 Simulation models for RF bipolar wideband transistors_________________________________________________________________________________________________________________________105
4.6.3 Simulation models for RF MOSFET transistors _______________________________________________________________________________________________________________________________________106
4.6.4 Simulation models for RF varicap diodes _______________________________________________________________________________________________________________________________________________106
4.6.5 Simulation models for RF MMIC amplifiers ____________________________________________________________________________________________________________________________________________ 107
5
Cross-references & replacements_______________________________________________________108
5.1 Cross-references: manufacturer types versus NXP types ______________________________________________________________________________________________________________________________ 108
5.2 Cross-references: NXP discontinued types versus NXP replacement types __________________________________________________________________________________________________ 117
6
Packing quantities per package with relevant ordering code _____________________________ 119
6.1 Packing quantities per package with relevant ordering code _________________________________________________________________________________________________________________________ 119
6.2 Marking codes ___________________________________________________________________________________________________________________________________________________________________________________________________122
7
Abbreviations _________________________________________________________________________124
8
Contacts and web links ________________________________________________________________125
9
Product index _________________________________________________________________________126
NXP Semiconductors RF Manual 16th edition
7
8
NXP Semiconductors RF Manual 16th edition
1. Products by application
1.1 Wireless communication infrastructure
Base stations (all cellular standards and frequencies)
Products
by application
1.1.1
See also brochure: 'Your partner in Mobile Communication Infrastructure design', NXP document number 9397 750 16837.
Application diagram
DPD
CFR
DUC
DDC
Power Amplifier
DVGA RF-BP
PLL
VCO
Dual
DAC
0
HPA
90
Transmitter
Q
IF-SAW
JEDEC
IF
MPA
DVGA Mixer+LO
Tower Mounted
Amplifier
Tx
Att.
ADC
LO
Duplexer
Digital
Front
End
(JEDEC) Interface
OBSAI / CPRI
Digital Baseband
JEDEC Interface
IQ-Modulator
I
JEDEC Interface
RF-SAW
Dual
ADC
Clock
Generator
Jitter Cleaner
BP or LP
Dual
DVGA
Data Converter
IF-SAW
Dual
Mixer
RF Small Signal
PLL
VCO
RF Power
LNA +VGA
Rx
LNA
TX / RX1
µC
RX2
Filter Unit
LNA+VGA
Micro Controller
The block diagram above shows transmit (upper part, Tx) and receive (lower part, Rx) functions of a base station, and includes the Tx feedback function (middle part, Tx feedback).
The signals generated in the "Digital Baseband & Control" block follow the requirements of the air-interface standard. These signals are interfaced to the DAC via
serial interface SER. The SER can use the LVDS or JEDEC standard. After the signals are fed to the I-DAC and Q-DAC, they are converted to the analog domain.
Before the I and Q signals enter the IQ modulator, they are first low-pass filtered to remove any aliasing signals. At the IQ modulator, the signals are up-converted to
RF using an LO signal coming from the PLL/VCO device, typically called the LO generator. Due to device aging and variation in cell load, the up-converted signals
are fed to the VGA to control the power level. An additional band-pass filter is needed to remove the out-of-band spurs. The clean signal is fed to the RF power
board, where the desired transmit power is made. Finally, the RF power signal is fed to the antenna via a duplexer.
Directly after the final-stage amplifier, a signal coupler picks up a certain amount of the RF signal, which is attenuated and then down-mixed using the IF mixer.
This signal is called the observation signal, and is used to derive coefficients for the digital pre-distortion algorithm. Since power levels vary, the observation is first
fed to the VGA to control the power level, and after band-pass filtering, the signal is converted to the digital domain using an ADC. The same serial interface is used
to send the digital signals to the baseband processor.
At the receiver, the received signal directly after the duplexer is fed to the LNA for direct amplification, since the received signal level is quite low. If the first LNA
is mounted in the tower top, a long RF cable is used to interface the RF signals with a base transceiver station (BTS). A second LNA is used to amplify the received
signals. Band-pass filtering is applied to reduce the out-of-band signals levels before these signals are applied to the IF mixer. Signal levels that change dramatically
require a VGA to maintain the full scale ranges of the I-ADC and Q-ADC for optimal conversion performance. Low-pass filtering is used before the ADC to remove
the aliasing signals. These digital signals are interfaced to the baseband using a serial interface such as JEDEC.
The sample clocks and LO signals are derived from clock cleaners and PLLs respectively. This is denoted as Clock and PLL / VCO in the block diagram. This set-up
is required to make a synchronized system. Typically denoted in SNRs, and in order to improve reception quality, the receive function is equipped with a second
receiver, called a diversity receiver.
NXP Semiconductors RF Manual 16th edition
9
Recommended products
Function
Product
Driver
Driver/final
MMIC
HPA
Final
Integrated Doherty
fmin (MHz)
fmax (MHz)
P1dB (W)
Matching
Package
Type
700
2200
10
-
SOT1179
2110
2170
40
I/O
SOT1121
BLP7G22-10*
BLF6G22L(S)-40P
2500
2700
40
I/O
SOT1121
BLF6G27L(S)-40P
2000
2200
60
I/O
SOT1212
BLM7G22S-60PB(G)*
700
1000
160
-
SOT467
BLF6H10L(S)-160
700
1000
200
I/O
SOT1244C
700
1000
270
I/O
SOT1244C
BLF8G10LS-270GV
850
960
300
I/O
SOT539
BLF8G10L(S)-300P*
900
1000
140
O
SOT1224
BLP7G09S-140P(G)*
920
960
160
I/O
SOT502
BLF8G10L(S)-160*
920
960
250
I/O
SOT502
1800
1900
260
I/O
SOT539B
BLF7G20LS-260A*
BLF7G20L(S)-250P
BLF8G10LS-200GV
BLF7G10L(S)-250
1805
1880
250
I/O
SOT539
2000
2200
160
I/O
SOT502B
BLF7G22L(S)-160*
2000
2200
200
I/O
SOT1244C
BLF8G22LS-200GV*
2000
2200
270
I/O
SOT1244C
BLF8G22LS-270GV*
2500
2700
100
I/O
SOT502
BLF7G27L(S)-100
2500
2700
140
I/O
SOT502
BLF7G27L(S)-140
3400
3600
100
I/O
SOT502
BLF6G38(LS)-100
2010
2025
50
O
SOT1130
BLD6G21L(S)-50
* Check status in section 3.1, as this type is not yet released for mass production
Product highlight:
BLF8G10LS-160
160 W LDMOS power transistor for base W-CDMA base station and
multi-carrier applications at frequencies from 920 to 960 MHz.
Features
`
`
`
`
`
`
`
`
`
10
NXP Semiconductors RF Manual 16th edition
Excellent ruggedness
High efficiency
Low R th providing excellent thermal stability
Designed for broadband operation (920 to 960 MHz)
Lower output capacitance for improved performance in Doherty
applications
Low memory effects for excellent pre-distortability
Internally matched for ease of use
Integrated ESD protection
Compliant to Restriction of Hazardous Substances (RoHS) Directive
2002/95/EC
Discrete
attenuator
Function
Product
RF diode
PIN diode
Product
RF transistor
SiGe:C transistor
LNA (low noise
amplifier)
Package
SOT753
SOT753
Various
Type
BAP64Q
BAP70Q
BAP64^
Package
Type
BFU725F/N1
BFU690F
BFU730F
BFU760F
BFU790F
BGU7051
BGU7052
BGU7053
BGU7060
BGU7061
BGU7062
BGU7063
SOT343F
SOT650
MMIC
SiGe:C MMIC
SOT1301
Function
Single VGA
(variable-gain
amplifier)
Product
Function
Dual VGA
(variable-gain
amplifier)
Product
Function
Product
MPA
(medium
power
amplifier)
Function
Dual mixer
MMIC
MMIC
MMIC
Product
MMIC
Function
Product
PLL + VCO
MMIC
(LO generator)
Function
IQ modulator
Product
MMIC
Gain range
31 dB
Gain range
24 dB
28 dB
PL (1dB) @ 940 MHz
24 dBm
28 dBm
25 dBm
28 dBm
30 dBm
Package
SOT617
Package
SOT617
Package
SOT89
SOT908
Type
BGA7210
BGA7204
Type
BGA7350
BGA7351
Type
BGA7024
BGA7027
BGA7124
BGA7127
BGA7130
Frequency
0.7 - 1.2 GHz
1.7 -2.7 GHz
Package
Noise
131 dBc/Hz @ 1 MHz
offset @ 5.3 GHz
Package
Type
SOT617
BGX7300*
Package
Type
BGX7100
BGX7101
Output power
0 dBm
4 dBm
SOT1092
SOT616
Products
by application
Function
Type
BGX7220
BGX7221
* Check status in section 3.1, as this type is not yet released for mass production
for mass production
^ SOD523, SOD323, SOT23 & SOT323
Product highlight:
Digital VGAs BGA7204 & BGA7210
These 6-bit digital VGAs offer high linearity (35 dBm @ 2.2-2.8 GHz)
and high output power (23 dBm @ 2.2-2.8 GHz) across a large
bandwidth without external matching. Smart routing with no
connection crosses simplifies design and decreases footprint by 25%.
The unique power-save mode can effectively reduce the current
consumption in TDD systems up to 45%. The BGA7210 adds flexible
current distribution across its two amplifiers, depending on the
attenuation state, to save current.
Features
` Internally matched for 50 Ω
- BGA7204 = 0.4 to 2.75 GHz
- BGA7210 = 0.7 to 3.8 GHz
` High maximum power gain
- BGA7204 = 18.5 dB
- BGA7210 = 30 dB
` High output third-order intercept, IP3O
- BGA7204 = 38 dB
- BGA7210 = 39 dB
` Attenuation range of 31.5 dB, 0.5 dB step size (6 bit)
` Fast switching power-save mode (power-down pin)
` Digitally controlled current setting from 120 to 195 mA with an
optimum at 185mA (BGA7210 only)
` Simple control interfaces (SPI)
` ESD protection on all pins (HBM 4 kV; CDM 2 kV)
NXP Semiconductors RF Manual 16th edition
11
1.1.2
Point-to-point communications
Application diagram
INDOOR UNIT
POWER
SUPPLY
OUTDOOR UNIT
PLL VCO
0
MPA
VGA
IF
VGA
PA
MPA
BPF
90
BUF
DIGITAL
SIGNAL
PROCESSOR
REF
MPX
PMU
PLL VCO
0
90
ANALOG
VGA
VGA
to/from
IDU
MPX
REF
PMU
SYNTH
PLL
ANTENNA
PLL
IF
LNA
LNA
LNA
LPF
VGA
VGA
DATA
INTERFACE
brb406
Recommended products
Indoor unit
Function
Product
Single VGA
(variable-gain
amplifier)
Function
MMIC
Product
Dual VGA
(variable-gain
amplifier)
Function
MMIC
Product
MPA
(medium
power
amplifier)
Function
MMIC
Product
IQ
modulator
MMIC
Gain range
23 dB
31 dB
Gain range
24 dB
28 dB
PL (1dB) @
940 MHz
24 dBm
28 dBm
25 dBm
28 dBm
30 dBm
Output
power
0 dBm
4 dBm
Package
SOT617
Package
SOT617
Package
SOT89
SOT908
Type
Function
Product
Package
BGA7202
BGA7204
Type
IF gain block
MMIC
MMIC
Generalpurpose
wideband
amplifiers
IF
BGA7350
BGA7351
Type
Function
BGA7024
BGA7027
BGA7124
BGA7127
BGA7130
Product
Package
SOT891
SOT650
RF MMIC
SiGe:C
MMIC
SOT1301
LNA
Package
Type
SOT616
BGX7100
BGX7101
SiGe:C
transistor
NXP Semiconductors RF Manual 16th edition
SOT343F
RF transistor
Wideband
transistor
12
SOT363
SOT343R
SOT143R
Type
BGA2800
BGA2801
BGA2815
BGA2816
BGM1012
BGA2714
BGA2748
BGA2771
Type
BGU7003
BGU7051
BGU7052
BGU7053
BGU7060
BGU7061
BGU7062
BGU7063
BFU725F/N1
BFU710F
BFU730F
BFG425W
BFG424W
BFG325/XR
Outdoor unit
Single VGA
(variablegain
amplifier)
Function
MPA
(medium
power
amplifier)
Function
Buffer
Function
LNA
Function
Product
Gain range
Package
Type
BGA7210
MMIC
31 dB
SOT617
BGA7204
Product
MMIC
PL (1dB)
@ 940 MHz
24 dBm
28 dBm
25 dBm
28 dBm
30 dBm
Product
RF transistor
SiGe:C
transistor
SOT908
SOT343F
Package
SiGe:C
transistor
Product
IF gain block
SOT89
Package
Product
RF transistor
Package
SOT343F
Package
MMIC
SOT363
IF
MMIC
Generalpurpose
wideband
amplifiers
Type
BGA7024
BGA7027
BGA7124
BGA7127
BGA7130
Type
BFU725F/N1
BFU730F
BFU760F
BFU790F
Type
BFU725F/N1
BFU730F
BFU760F
BFU790F
Function
Dual VGA
(variablegain
amplifier)
Function
PLL + VCO
(LO
generator)
Function
Oscillator
Product
Gain range
Package
24 dB
MMIC
Type
BGA7350
SOT617
28 dB
Product
MMIC
Noise
Package
Type
-131 dBc/Hz @
1 MHz offset
@ 5.3 GHz
SOT617
BGX7300*
Package
Type
BFG424W
BFG425W
BFU725F/N1
BFU730F
BFU760F
BFU790F
Product
RF transistor
BGA7351
Wideband
transistor
SOT343R
SiGe:C
transistor
SOT343F
Products
by application
Function
* Check status in section 3.1, as this type is not yet released for mass
production
NXP BTS Tx component demonstrator board
Type
BGA2800
BGA2801
BGA2815
BGA2816
BGA2850
BGA2865
BGA2866
BGM1014
BGM1013
BGM1012
BGA2714
Product highlight:
BGA7350 MMIC variable-gain amplifier
The BGA7350 MMIC is a dual independent digitally controlled IF
variable-gain amplifier (VGA) operating from 50 to 250 MHz. Each IF
VGA amplifies with a gain range of 24 dB and, at its maximum gain
setting, delivers 17 dBm output power at 1 dB gain compression
with superior linear performance. The BGA7350 is optimized for a
differential gain error of less than ±0.1 dB for accurate gain control
and has a total integrated gain error of less than ±0.4 dB. It is housed
in a 32-pin leadless HVQFN package (5 x 5 mm).
Features
` Dual independent digitally controlled 24 dB gain range VGAs,
with 5-bit control interface
` 50 to 250 MHz frequency operating range
` Gain step size: 1 dB ± 0.1 dB
` 18.5 dB power gain
` Fast gain stage switching capability
` 17 dBm output power at 1 dB gain compression
` 5 V single supply operation with power-down control
` Logic-level shutdown control pin reduces supply current
` ESD protection at all pins
` Unconditionally stable
NXP Semiconductors RF Manual 16th edition
13
1.1.3
Repeater
Application diagram
Dual mixer
Tx0
PA
mixer
Dual DAC
Dual ADC
I-DAC
LPF
VGA
LPF
VGA
Dual mixer
mixer
LNA
RF SAW
LNA
RF SAW
LNA
Rx0
ADC
DDC/
DUC
Filtering
Tx1
PA
Dual VGA
LPF
LPF
Rx1
Q-DAC
ADC
mixer
mixer
PLL
VCO
Clock
Recovery
jitter
cleaner
LO Signal
brb631
Recommended products
Function
Product
fmin (MHz)
fmax (MHz)
P1dB (W)
Matching
700
2300
700
1450
1800
2110
2500
3400
2010
2110
2200
2700
1000
1550
2000
2170
2700
3800
2025
2170
10
10
45
40
45
40
40
50
50
50
I
I
I/O
I/O
I/O
I/O
I/O
O
I/O
Driver
Driver/final
HPA
Integrated Doherty
Function
Product
MPA
(medium power amplifier)
Function
PL (1 dB) @ 940 MHz
24 dBm
28 dBm
25 dBm
28 dBm
30 dBm
MMIC
Product
Dual VGA
(variable-gain amplifier)
Function
Gain range
24 dB
MMIC
28 dB
Product
Dual mixer
Function
Frequency range
1.7 - 2.7 GHz
0.7 - 1.2 GHz
MMIC
Product
Package
SOT1179
SOT975
SOT608
SOT1135
SOT608
SOT1121
SOT1121
SOT502
SOT1130
SOT1130
Package
SOT908
Package
Type
BGA7350
SOT617
BGA7351
Package
Type
BGX7220
BGX7221
SOT1092
Package
Type
BGU7051
BGU7052
BGU7053
BGU7060
BGU7061
BGU7062
BGU7063
SiGe:C MMIC
SOT1301
Function
Product
PLL + VCO
(LO generator)
MMIC
BLP7G22-10*
BLF6G27-10(G)
BLF6G10(S)-45
BLF6G15L(S)-40RN
BLF6G20(S)-45
BLF6G22L(S)-40P
BLF6G27L(S)-40P
BLF6G38(LS)-50
BLD6G21L(S)-50
BLD6G22L(S)-50
Type
BGA7024
BGA7027
BGA7124
BGA7127
BGA7130
SOT89
SOT650
LNA
Type
Noise
Package
Type
-131 dBc/Hz @ 1 MHz
offset @ 5.3 GHz
SOT617
BGX7300*
* Check status in section 3.1, as this type is not yet released for mass production
Product highlight:
BGX7221 MMIC dual down-mixer
The BGX7221 combines a pair of high performance, high linearity
down-mixers for use in receivers that have a common local oscillator
used with, for example, main and diversity paths. The device covers
frequency bands from 1700 to 2700 MHz with an extremely flat
behavior.
14
NXP Semiconductors RF Manual 16th edition
Features
`
`
`
`
`
`
`
`
`
`
8.5 dB conversion gain over all bands
13 dBm input, 1 dB compression point
25.5 dBm input third-order intercept point
10 dB (typ) small signal noise figure
Integrated active biasing
Single +5 V supply operation
Power-down per mixer with hardware control pins
Low bias current in power-down mode
Matched 50 Ω single-ended RF and LO input impedances
ESD protection at all pins
1.2 Broadband communication infrastructure
1.2.1
CATV optical (optical node with multiple out-ports)
RF power
amplifier
Products
by application
Application diagram
duplex
filter
coax out
port 1
fiber in
RF forward
receiver
RF preamplifier
splitter
coax out
port 2
coax out
port 3
coax out
port 4
bra852
Recommended products
Function
RF forward
receiver
Product
Forward
path receiver
Function
Product
Frequency
Power doubler
870 MHz
RF
pre-amplifier
Frequency
870 MHz
870 MHz
Push-pulls
1 GHz
Function
RF power
amplifier
Product
Power
doublers
Frequency
870 MHz
1 GHz
Package
SOT115
SOT115
Type
BGO807C
BGO807CE
Gain (dB)
18.2 - 18.8
18 - 19
21 - 22
23 - 24.5
27 - 28.5
Type
BGD812
BGY885A
BGY887
CGY1043
CGY1047
Gain (dB)
22 - 24
24 - 26
22 - 23.5
26.5 - 28
Type
CGD942C
CGD944C
CGD1042Hi
CGD1046Hi
Product highlight:
BGO807CE optical receiver
The BGO807CE is an integrated optical receiver module that
provides high output levels and includes an integrated temperaturecompensated circuitry. In your optical node design, BGO807CE
enables a high performance/ price ratio and ruggedness. When
upgrading an HFC network from analog to digital, our BGO807CE
is the perfect fit.
Features
`
`
`
`
`
`
`
Excellent linearity
Low noise
Excellent flatness
Standard CATV outline
Rugged construction
Gold metallization ensures excellent reliability
High optical input power range
NXP Semiconductors RF Manual 16th edition
15
1.2.2
CATV electrical (line extenders)
Application diagram
duplex
filter
RF preamplifier
RF power
amplifier
duplex
filter
coax in
coax out
RF reverse
amplifier
bra505
Recommended products
Function
Product
Frequency
550 MHz
750 MHz
RF
pre-amplifier
870 MHz
Push-pulls
1003 MHz
Function
Product
RF reverse
amplifier
Reverse
hybrids
Frequency
5-75 MHz
5-120 MHz
5-200 MHz
Gain (dB)
33.5 - 35.5
33.2 - 35.2
18 - 19
21 - 22
18 - 19
21 - 22
33.5 - 34.5
34.5 - 36.5
18 - 19
21 - 22.5
23 - 24.5
27 - 28.5
29 - 31
32 - 34
Type
BGY588C
BGE788C
BGY785A
BGY787
BGY885A
BGY887
BGY888
CGY888C
BGY1085A
CGY1041
CGY1043
CGY1047
CGY1049
CGY1032
Gain (dB)
29.2 - 30.8
24.5 - 25.5
23.5 - 24.5
Type
BGY68
BGY66B
BGY67A
Function
Product
Frequency
750 MHz
870 MHz
RF power
amplifier
Power
doublers
1003 MHz
Gain (dB)
18.2 - 18.8
18.2 - 18.8
20 - 20.6
18.2 - 18.8
19.7 - 20.3
22 - 23
24 - 26
22 - 24
24 - 26
19.5 - 22
22 - 23.5
23.5 - 25.5
26 - 28
22 - 24
23.5 - 25.5
26 - 28
All available in SOT115 package
Product highlight:
CGD1046Hi
Capable of supporting high output power, the CGD1046Hi is
primarily designed for use in fiber deep-optical-node applications
(N+1/2/3). This 1 GHz hybrid amplifier solution offers an extended
temperature range, high-power overstress capabilities in case of
surges, and high ESD levels. The result is a low cost of ownership,
with durability and superior ruggedness.
16
NXP Semiconductors RF Manual 16th edition
Features
`
`
`
`
`
`
`
`
`
`
`
`
High output power
High power gain for power doublers
Extremely low noise
Dark Green products
GaAs HFET dies for high-end applications
Rugged construction
Superior levels of ESD protection
Integrated ringwave protection
Design optimized for digital channel loading
Temperature-compensated gain response
Optimized heat management
Excellent temperature resistance
Type
BGD712
BGD712C
BGD714
BGD812
BGD814
CGD942C
CGD944C
CGD1042H
CGD1044H
CGD1040Hi
CGD1042Hi
CGD1044Hi
CGD1046Hi
CGD982HCi
CGD985HCi
CGD987HCi
Looking for more information on our wideband LNAs supporting multi-tuner applications in TVs, DVR/PVRs, and STBs?
See section 2.3.1 LNAs with programmable gain & bypass option for improved tuner performance.
1.3 TV and satellite
Network interface module (NIM) for TV reception
Products
by application
1.3.1
Application diagram
RF input
VGA
surge
CONVENTIONAL
TUNER OR
SILICON TUNER
RF SW
WB LNA
RF output
brb403
Recommended products
Function
Product
Vcc (V)
5
Gain (db)
10
Package
Type
SOT363
BGU7031
SOT363
BGU7032
SOT363
BGU7033
SOT363
BGU7041
SOT363
BGU7042
SOT363
BGU7044
SOT363
BGU7045
10
5
-2
10
5
5
-2
LNA
MMIC
3.3
10
10
3.3
-2
3.3
14
14
3.3
-2
Product highlight:
Make a high-performance active splitter in a NIM tuner
with the BGU703x/ BGU704x
Today's TV tuners require complicated signal handling and benefit
from flexibility in design. The front-end of a TV signal receiver is
no longer just a tuned receiver, but has evolved into an RF network
interface module (NIM) with tuned demodulators, active splitters,
and remodulators. The active splitter requires an LNA with excellent
linearity. NXP has developed two new series of LNA/VGA MMICs
(BGU703x/BGU704x), designed especially for high linearity (P3O
of 29 dBm) in low-noise applications such as an active splitter in a
NIM tuner. The BGU703x family operates at a supply voltage of 5 V
and is intended for use with normal can tuners. The BGU704x family
operates at 3.3 V and works seamlessly with our Si tuner ICs, which
also operate at 3.3 V.
NXP Semiconductors RF Manual 16th edition
17
Recommended products
Function
Product
5 V silicon RF
switch
RF Switch /
PLT switch
MOSFET
3.3 V silicon
RF switch
Function
Product
AGC control
amplifier
MOSFET
Package
SOT23
SOT143B
SOT143R
SOT343
SOT343R
SOT143B
SOT143R
SOT343
SOT343R
Type
BF1107
BF1108
BF1108R
BF1108W
BF1108WR
BF1118
BF1118R
BF1118W
BF1118WR
Package
Type
2-in-1 with
band switch
@5V
SOT363
BF1215
2-in-1 @ 5 V
SOT363
BF1216
5V
SOT343
BF1217
Note: given that there is now an LNA before the MOSFET, the gain of these
MOSFETs is made slightly lower and the cross-modulation somewhat higher.
That way, the MOSFET is not under AGC even under nominal RF input level.
BGU703x evaluation board
Product highlight:
Save energy with the BF11x8
The BF11x8 series are small-signal, RF-switching MOSFETs that can
be used to switch RF signals up to 1 GHz. Using the BF11x8 series
as an RF switch saves a considerable amount of energy. When a
recording device (DVD-R, HDD-R, VCR, DVR) is powered off, viewers
can still watch TV, although the antenna is looped via the recording
device. Without the BF11x8, the antenna signal is lost. When power
18
NXP Semiconductors RF Manual 16th edition
to the recording device is on, the BF11x8 is open, so the RF signal
travels via the recording device to the TV tuner. When power to the
recording device is off, the BF11x8 closes. This ensures that the RF
signal is looped through directly to the TV tuner and guarantees TV
reception. This saves energy because the recording device can be
powered off.
1.3.2
Basic TV tuner
Application diagram
MOSFET
From antenna,
cable, active splitter,
etc.
MOPLL
IC
Products
by application
RF input
IF
VAGC
bra500
Recommended products
Function
Product
VHF low
Input filter
Varicap
diode
VHF high
UHF
Function
Product
5V
RF
pre-amplifier
MOSFET
2-in-1 @ 5 V
V
Package
SOD323
SOD523
SOD323
SOD523
SOD523
SOD882D
SOD882D
SOD323
SOD882D
SOD523
SOD523
Type
BB152
BB182
BB153
BB178
BB187
BB178LX
BB187LX
BB149A
BB179LX
BB179
BB189
Package
SOT143
SOT143
SOT143
SOT143
SOT143
SOT363
SOT363
SOT363
SOT363
SOT363
SOT666
SOT666
SOT363
SOT363
SOT363
Type
BF1201
BF1202
BF1105
BF1211
BF1212
BF1102R
BF1203
BF1204
BF1206
BF1207
BF1208
BF1208D
BF1210
BF1214
BF1218
Function
Bandswitching
Function
Bandpass filter
with bypass
The BGU7045 MMIC is a 3.3 V wideband amplifier with bypass mode.
It is designed specifically for high-linearity, low-noise applications
over a frequency range of 40 MHz to 1 GHz. It is especially suited
to set-top box applications. The LNA is housed in a 6-pin SOT363
plastic SMD package.
Product
Varicap
diode
VHF high
UHF
Function
Product
VHF low
Oscillator
Varicap
diode
VHF high
UHF
RF
pre-amplifier
BGU7045 1 GHz wideband low-noise amplifier
Bandswitch diode
VHF low
Function
Product highlight:
Product
Product
MOSFET
Package
SOD523
SOD523
SOD523
Type
BA277
BA891
BA591
Package
SOD323
SOD523
SOD323
SOD882D
SOD523
SOD882D
SOD523
SOD323
SOD882D
SOD523
SOD523
Type
BB152
BB182
BB153
BB178LX
BB178
BB187LX
BB187
BB149A
BB179LX
BB179
BB189
Package
SOD323
SOD523
SOD323
SOD882D
SOD523
SOD882D
SOD523
SOD323
SOD882D
SOD523
SOD523
Type
BB152
BB182
BB153
BB178LX
BB178
BB187LX
BB187
BB149A
BB179LX
BB179
BB189
Package
Type
2-in-1 with
band switch
@5V
SOT363
BF1215
2-in-1 @ 5 V
SOT363
BF1216
5V
SOT343
BF1217
Features
`
`
`
`
`
`
`
Internally biased
Noise figure of 2.8 dB
High linearity with an IP3O of 29 dBm
75 Ω input and output impedance
Power-down during bypass mode
Bypass mode current consumption < 5 mA
ESD protection > 2 kV HBM and >1.5 kV CDM on all pins
NXP Semiconductors RF Manual 16th edition
19
1.3.3
Satellite outdoor unit, twin low-noise block (LNB) with discrete components
Looking for fully integrated mixer / oscillator / downconverter for universal single LNB?
See section 2.3.2 Complete satellite portfolio for all LNB architectures
Application diagram
horizontal
1st
antenna stage
LNA
2nd
stage
LNA
3rd
stage
LNA
mixer
H low
IF amplifier
oscillator
low
mixer
BIAS IC
V low
mixer
IF amplifier
H high
IF
amplifier
(4 x 2)
IF
SWITCH
IF out 1
IF amplifier
vertical
antenna
high
oscillator
IF
amplifier
V high
1st
stage
LNA
2nd
stage
LNA
3rd
stage
LNA
mixer
IF amplifier
IF out 2
brb022
Recommended products
Function
2nd & 3 rd
stage LNA
Product
Function
Product
RF bipolar
transistor
RF transistor
Oscillator
RF transistor
Function
IF switch
Function
1st stage
IF
amplifier
Package
SiGe:C
transistor
Wideband
transistor
SiGe:C
transistor
Product
RF diode
PIN diode
Product
MMIC
RF bipolar
transistor
IF gain block
Wideband
transistor
SOT343F
Package
SOT343
SOT343F
SOT343F
Type
BFU710F
BFU730F
Type
BFG424W
BFG424F
BFU660F
BFU710F
BFU730F
Package
Various
Various
Various
Various
Various
Type
BAP64^
BAP51^
BAP1321^
BAP50^
BAP63^
Package
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT343
SOT343F
Type
BGA2800
BGA2801
BGA2802
BGA2803
BGA2815
BGA2816
BGA2817
BGA2818
BGA2850
BGA2851
BGA2866
BFG424W
BFG424F
Function
Product
Package
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
Type
BGA2800
BGA2801
BGA2815
BGA2816
BGA2818
BGA2850
BGA2865
BGA2866
BGA2867
BGA2870
BGA2874
BGM1014
MMIC
IF gain block
RF bipolar
transistor
Wideband
transistor
SOT343
BFG325
2nd stage LNA
RF transistor
SiGe:C
SOT343F
BFU710F
BFU730F
Function
Product
Output
stage IF
amplifier
Mixer
RF transistor
Package
SiGe:C
transistor
SOT343F
Type
BFU710F
BFU730F
^ Also available in ultra-small leadless package SOD882D
Product highlight:
BGA28xx-family of IF gain blocks
The BGA28xx IF gain blocks are silicon Monolitic Microwave
Integrated Circuit (MMIC) wideband amplifiers with internal
matching circuitry in a 6-pin SOT363 plastic SMD package.
20
NXP Semiconductors RF Manual 16th edition
Features
`
`
`
`
`
No output inductor necessary when used at the output stage
Internally matched to 50 Ω
Reverse isolation > 30 dB up to 2 GHz
Good linearity with low second- and third-order products
Unconditionally stable (K > 1)
1.3.4
Satellite outdoor unit, twin low-noise block (LNB) with integrated mixer / oscillator / downconverter
Application diagram
H
LNA3
LNA3
COMBINER
LNA2
SPLITTER
LNA1
IF out 1
shared
crystal
LNA3
V
TFF1014
SWITCHED TO
LOW-BAND
BPF
Products
by application
LNA2
COMBINER
LNA1
SPLITTER
LNA3
BPF
TFF1014
IF out 2
SWITCHED TO
HIGH-BAND
22 kHz
TONE
DETECT
3
H/V
DETECT
aaa-002896
Recommended products
Function
2nd & 3 rd
stage LNA
Product
Function
Product
Mixer/
oscillator/
downconverter
Package
RF transistor
RF IC
SiGe:C
transistor
SOT343F
Type
BFU710F
BFU730F
Package
Type
SOT763
TFF1014HN
Product highlight:
Industry’s lowest-power integrated Ku-band downconverters
These Universal DVB-S compliant Ku-band downconverters consume
about 50% less current (52 mA) than other integrated solutions.
They are fully integrated (PLL synthesizer/mixer/IF gain block) and RF
tested – which results in significantly decreased manufacturing time.
Stability of the local oscillator is guaranteed, which improves overall
system reliability over temperature and time, and eliminates the need
for manual alignment in production.
Features
`
`
`
`
Ultra-low current consumption (ICC = 52 mA)
Low phase noise (1.5° RMS typ)
Integration bandwidth from 10 kHz to 13 MHz
Small PCB footprint
- DHVQFN16 package (2.5 x 3.5 x 0.85 mm)
- Only 7 external components
- No inductors necessary
NXP Semiconductors RF Manual 16th edition
21
1.3.5
Satellite multi-switch box - 4 x 4 (up to 16 x 16) / DiSEqC / SMATV
Application diagram
input
terrestrial
amplifier
input
terrestrial
satellite dishe(s)
input
amplifiers
LNB
output
amplifiers
coax out to STB
SWITCH MATRIX
FOR 4 × 4,
NEEDS 16
(SINGLE) PIN
DIODES
coax out to STB
coax out to STB
coax out to STB
brb023
Recommended products
Function
Product
Input
amplifier
terrestrial
Function
MMIC
Package
General
purpose
medium
power
amplifier
Product
MMIC
Input
amplifier
LNB
RF bipolar
transistor
General
purpose
amplifier
Wideband
transistor
SiGe:C
transistor
Function
Product
Switch
matrix
RF diode
RF transistor
SOT89
SOT908
Package
SOT363
SOT363
SOT363
SOT363
SOT343
SOT343
SOT143
SOT143
SOT343F
Package
PIN diode
SiGe:C
transistor
Various
SOT343F
Type
BGA6289
BGA6489
BGA6589
BGA7024
BGA7124
Type
BGA2771
BGA2866
BGA2867
BGA2818
BFG325
BFG425W
BFG520
BFG540
BFU660F
BFU725F/N1
BFU730F
Type
BAP50^
BAP51^
BAP63^
BAP64^
BAP70^
BAP1321^
BFU725F/N1
BFU730F
Function
Product
MMIC
Package
SOT908
Type
BGA6289
BGA6489
BGA6589
BGA7024
BGA7124
SOT363
BGM1011
SOT363
BGA2869
Wideband
transistor
SOT223
SOT223
SOT223
SOT143
SiGe:C
transistor
SOT343F
BFG135
BFG 591
BFG198
BFG540
BFU725F/N1
BFU730F
General
purpose
medium
power
amplifier
General
purpose
amplifier
Output
amplifier
RF bipolar
transistor
SOT89
^ Also available in ultra-small leadless package SOD882D
Product highlight:
PIN diodes for switching matrix
In addition to delivering outstanding RF performance, this component
simplifies design-in because of its extremely low forward resistance,
diode capacitance, and series inductance. Significant board space
is saved by supplying a range of highly compact package options,
including SOD523, SOD323 and leadless SOD882D.
22
NXP Semiconductors RF Manual 16th edition
Features
` High isolation, low distortion, low insertion loss
` Low forward resistance (Rd) and diode capacitance (Cd)
` Ultra-small package options
1.3.6
VSAT
Application diagram
OUTDOOR UNIT
INDOOR UNIT
IF
POWER
SUPPLY
PA
IF1
Products
by application
MOD
BUF
DIGITAL
SIGNAL
PROCESSOR
REF
MPX
to/from
IDU
REF
MPX
PMU
PMU
LNA
IF2
SYNTH
PLL
´N
PLL
OMT
ANTENNA
BUF
DATA
INTERFACE
IF1
LNA2
LNA1
DEMOD
brb405
Recommended products
Indoor unit
Function
Product
IF
Function
MMIC
Package
IF gain block
Product
LNA
Type
BGA2714
BGA2748
BGA2771
BGA2800
BGA2801
BGA2815
BGA2816
BGM1012
SOT363
Package
SiGe:C transistor
SOT343F
Wideband
transistor
SOT343R
Type
BFU725F/N1
BFU710F
BFU725F/N1
BFU730F
BFG425W
BFG424W
BFG325/XR
RF transistor
SOT143R
Product highlight:
TFF1003HN Low phase noise LO generator for VSAT
applications
The TFF1003HN is a Ku-band frequency generator intended for
low phase noise local-oscillator (LO) circuits for Ku-band VSAT
transmitters and transceivers. The specified phase noise complies
with IESS-308 from Intelsat.
Features
`
`
`
`
`
`
`
Phase noise compliant with IESS-308 (Intelsat)
LO generator with VCO range: 12.8 to 13.05 GHz
Input signal 50 to 816 MHz
Divider settings: 16, 32, 64, 128, or 256
Output level −5 dBm; stability ±2 dB
Third- or fourth-order
Internally stabilized voltage references for loop filter
NXP Semiconductors RF Manual 16th edition
23
Recommended products
Outdoor unit
Function
Product
IF
Function
MMIC
Package
IF gain block
Product
LNA2
Function
Package
RF transistor
SiGe:C transistor
MMIC
SiGe:C MMIC
Product
PLL
Function
RF IC
SOT891
Product
RF diode
Function
Product
RF transistor
Type
BFU610F
BFU630F
BFU660F
BFU690F
BFU710F
BFU725F/N1
BFU730F
BFU760F
BFU790F
BGU7003
Type
TFF1003HN
TFF1007HN
TFF11xxxHN^
SiGe:C IC
SOT616
Wideband
transistor
SOT343R
SiGe:C transistor
SOT343F
Varicap diode
Package
SOD523
Type
BB202
Package
Type
BFU610F
BFU630F
BFU660F
BFU690F
BFU710F
BFU725F/N1
BFU730F
BFU760F
BFU790F
Package
RF transistor
Function
Synth
Buffer
SOT343F
Package
Product
Oscillator
SOT363
Type
BGA2800
BGA2801
BGA2815
BGA2816
BGA2850
BGA2865
BGA2866
BGM1014
BGM1013
BGM1012
BGA2714
SiGe:C transistor
SOT343F
Type
BFG424W
BFG425W
BFU610F
BFU630F
BFU660F
BFU690F
BFU710F
BFU725F/N1
BFU730F
BFU760F
BFU790F
^ 17 different types with LO ranges: 7-15 GHz, see 3.4.4
Product highlight:
TFF1007HN Low phase noise LO generator
for VSAT applications
The TFF1007HN is a Ku-band frequency generator intended for
low phase noise local-oscillator (LO) circuits for Ku-band VSAT
transmitters and transceivers. The specified phase noise complies
with IESS-308 from Intelsat.
24
NXP Semiconductors RF Manual 16th edition
Features
` Divider settings: 64
` Input signal 230.46 to 234.38 MHz
` Internally stabalized voltage references for loop filter and output
power level
` LO generator with VCO range: 14.75 to 15 GHz
` Output level -4 dBm minimum
` Phase noise compliant with IESS-308 (Intelsat)
` Third- or fourth-order PLL
1.4 Portable devices
1.4.1
GPS
Products
by application
Application diagram
external
active
antenna
LNA
BPF
SPDT
embedded
antenna
LNA
BPF
BPF
GPS
RECEIVER
IC
001aan955
Recommended products
Function
SPDT switch
Function
Product
RF diode
Package
PIN diode
Product
RF transistor
Various
Package
SiGe:C
transistor
SOT343F
SOT891
LNA
MMIC
SiGe:C
MMIC
SOT886
WL-CSP
Type
BAP64^
BAP1321^
BAP51^
Type
BFU725F /N1
BFU710F
BFU730F
BGU7003
BGU7003W
BGU7004
BGU7005
BGU7007
BGU7008
BGU8007
BGU8006
^ Also available in ultra-small leadless package SOD882D
Product highlight:
BGU8007 SiGe:C LNA MMIC for GPS, GLONASS,
and Galileo
The BGU8007 is a low-noise amplifier (LNA) for GNSS receiver
applications in a plastic leadless 6-pin extremely-small SOT886
package. It requires only one external matching inductor and one
external decoupling capacitor.
Features
`
`
`
`
`
`
`
`
`
`
Covers full GNSS L1 band, from 1559 to 1610 MHz
Noise figure (NF) = 0.75 dB
Gain = 19.5 dB
High 1 dB compression point of -12 dBm
High out-of-band IP3i of 4 dBm
Supply voltage 1.5 to 2.85 V
Power-down mode current consumption < 1 µA
Optimized performance at low supply current of 4.8 mA
Integrated temperature stabilized bias for easy design
Requires only one input matching inductor and one supply
decoupling capacitor
NXP Semiconductors RF Manual 16th edition
25
1.4.2
FM radio
Application diagram
headset
antenna
LNA
SPDT
embedded
antenna
LNA
FM
RECEIVER
IC
001aan956
Recommended products
Function
Product
SPDT switch
Function
RF diode
Package
PIN diode
Product
RF transistor
SiGe:C
transistor
MMIC
SiGe:C
MMIC
LNA
Various
Type
BAP64^
BAP 65^
BAP1321^
BAP51^
Package
Type
SOT343F
BFU725F /N1
SOT1209
SOT891
SOT886
BGU6101
BGU6102
BGU6104
BGU7003
BGU7003W
^ Also available in ultra-small leadless package SOD882D
Product highlight:
BGU6102 MMIC wideband amplifier
The BGU6102 is an unmatched MMIC featuring an integrated biasenable function and a wide supply voltage. It is part of a family of
three products (BGU6101, BGU6102, BGU6104), and is optimized for
2 mA operation.
26
NXP Semiconductors RF Manual 16th edition
Features
`
`
`
`
`
`
`
`
Applicable between 40 MHz and 4 GHz
High ohmic FM LNA: 13 dB gain and 1.0 dB NF at 100 MHz
50 Ω FM LNA: 15 dB gain and 1.3 dB NF at 100 MHz
Integrated temperature-stabilized bias for easy design
Bias current configurable with external resistor
Power-down mode current consumption < 6 μA
ESD protection > 1 kV Human Body Model (HBM) on all pins
Supply voltage from 1.5 to 5 V
1.4.3
China Mobile Multimedia Broadcasting (CMMB) in UHF band 470 – 862 MHz
Products
by application
Application diagram
Recommended products
Function
LNA
Product
MMIC
Package
SOT891
SOT886
SiGe:C MMIC
SOT1209
Type
BGU7003
BGU7003W
BGU6101
BGU6102
BGU6104
Product highlight:
BGU7003W MMIC wideband amplifier
The BGU7003W MMIC is a wideband amplifier in SiGe:C technology
for high-speed, low-noise applications. It is housed in a plastic
leadless 6-pin extremely thin small outline SOT886 package.
Features
`
`
`
`
`
`
`
Low-noise, high-gain microwave MMIC
Bias current configurable with external resistor
Noise figure NF = 1.2 dB at 600 MHz
Insertion power gain = 19.5 dB at 600 MHz
Power-down mode current consumption < 1 μA
Optimized performance at low supply current of 5 mA
ESD protection > 1 kV HBM on all pins
NXP Semiconductors RF Manual 16th edition
27
1.4.4
Cellular receiver
Application diagram
GSM/
EDGE
GSM/EDGE FE
SWITCH
TRANSCEIVER
PA
BPF
UMTS
LTE
duplexer
001aan957
Recommended products
Function
LNA
Product
MMIC
SiGe:C MMIC
Package
SOT891
SOT886
Type
BGU7003
BGU7003W
Product highlight:
BGU7003 MMIC wideband amplifier
The BGU7003 MMIC is a wideband amplifier in SiGe:C technology for
high-speed, low-noise applications. It is housed in a plastic leadless
6-pin extremely thin small outline SOT886 package.
28
NXP Semiconductors RF Manual 16th edition
Features
`
`
`
`
`
`
Applicable between 40 MHz and 6 GHz
LTE LNA: 1 dB NF, 18.5 dB gain and -5 dBm IIP3 at 750 MHz
Integrated temperature-stabilized bias for easy design
Bias current configurable with external resistor
Power-down mode current consumption < 1 μA
ESD protection > 1 kV Human Body Model (HBM) on all pins
1.4.5
802.11n DBDC and 802.11ac WLAN
low pass
filter
Products
by application
Application diagram
PActrl
Tx
antenna
SPDT
switch
medium
power
amplifier
APPLICATION
CHIPSET
Rx
bandpass
filter
LNA
SPDT
bra502
Recommended products
Function
Medium
power
amplifier
Function
LNA
Product
MMIC
Package
Medium power
amplifier
Product
RF transistor
MMIC
SOT89
SOT908
Package
SiGe:C
transistor
SiGe:C MMIC
SOT343F
SOT883C
Type
BGA7024
BGA7027
BGA7124
BGA7127
Type
BFU730F
BFU760F
BFU730LX
Product highlight:
BFU760F NPN silicon germanium microwave transistor
The BGU760F is part of the family of 6th (Si) and 7th (SiGe:C)
generation RF transistors and can be used to perform nearly any RF
function. These next-generation wideband transistors offer the best
RF noise figure versus gain performance, drawing the lowest current.
This performance allows for better signal reception at low power and
enables RF receivers to operate more robustly in noisy environments.
Features
` System optimized gain of 12.5 dB @ 2.4 GHz and 11 dB @ 5.5 GHz
` Low noise figure (NF) of 1.1 dB @ 2.4 GHz and 5.5 GHz
` High input 1 dB gain compression (Pi(1dB) ) of -8 dBm @ 2.4 GHz and
-5 dBm @ 5.5 GHz
` High input third order intercept point IP3I of +3 dBm @ 2.4 GHz and
+8 dBm @ 5.5 GHz
` Only 8 external components required
NXP Semiconductors RF Manual 16th edition
29
1.4.6
Generic RF front-end
Application diagram
antenna
filter
LNA
filter
mixer
buffer
SPDT
switch
filter
VCO
PA
driver
LOW
FREQUENCY
CHIP SET
VCO
bra850
Recommended products
Function
Product
SPDT switch
RF diode
Bandswitch
diode
PIN diode
Function
Product
Wideband
transistor
RF bipolar
transistor
LNA
MMIC
Function
Driver
Product
RF bipolar
transistor
MMIC
SiGe:C
transistor
Package
SOD523
SOD323
Various
Various
Type
BA277
BA591
BAP51^
BAP1321^
Function
Package
SOT23
SOT323
SOT323
Type
PBR951
PRF957
PRF947
BFU610F
BFU630F
BFU660F
BFU690F
BFU710F
BFU725F/N1
BFU730F
BFU760F
BFU790F
BGU6101
BGU6102
BGU6104
Function
SOT343F
Low-noise
SOT1209
wideband ampl.
Wideband
transistor
Gen-purp
wideband amp
Package
SOT323
SOT23
SOT363
SOT363
Mixer
Buffer
Function
Power
amplifier
Function
VCO
Product
RF bipolar
transistor
Wideband
transistor
MMIC
Linear mixer
Product
RF bipolar
transistor
Wideband
transistor
Product
MMIC
Product
Varicap
diodes
Generalpurpose
wideband
amplifier
VCO varicap
diodes
Package
SOT343
SOT343
SOT343
SOT363
Type
BFG410W
BFG425W
BFG480W
BGA2022
Package
SOT23
SOT323
SOT323
SOT416
Type
PBR951
PRF957
PRF947
PRF949
Package
Type
BGA6289
BGA6489
BGA6589
BGA7024
BGA7027
SOT89
Package
SOD523
SOD323
Type
BB198
BB156
Type
PRF957
PBR951
BGA2771
BGA2866
^ Also available in ultra-small leadless package SOD882D
Product highlight:
BFU790F silicon NPN germanium microwave transistor
Silicon NPN germanium microwave transistor for high-speed, lownoise applications in a plastic, 4-pin dual-emitter SOT343F package.
30
NXP Semiconductors RF Manual 16th edition
Features
` Low-noise, high-linearity microwave transistor
` 110 GHz fT silicon germanium technology
` High maximum output power at 1 dB compression of 20 dBm
at 1.8 GHz
1.5 Automotive
1.5.1
SDARS & HD radio
Products
by application
Application diagram
antenna
1st
stage
LNA
2nd
stage
LNA
filter
3rd
stage
LNA
CHIPSET
001aan958
Recommended products
Function
1 stage
LNA
st
Function
2nd stage
LNA
Function
3 stage
LNA
rd
Product
MMIC
Low-noise wideband
amplifier
Product
MMIC
General-purpose
wideband amplifier
Product
RF transistor
Package
Type
SOT343F
BFU730F
Package
SOT343F
Type
BFU690F
BGA2869
BGA2851
BGA2803
SOT363
Package
SiGe:C transistor
SOT343F
Type
BFU690F
BFU725F/N1
BFU790F
Product highlight:
BFU730F NPN wideband silicon germanium RF transistor
The BGU730F is part of the family of 6th (Si) and 7th (SiGe:C)
generation RF transistors and can be used to perform nearly any RF
function. These next-generation wideband transistors offer the best
RF noise figure versus gain performance, drawing the lowest current.
This performance allows for better signal reception at low power and
enables RF receivers to operate more robustly in noisy environments.
Features
At 2.3 GHz
` High maximum power gain (Gp) of 17.6 dB
` Noise figure (NF) of 0.8 dB
` Input 1dB gain compression (Pi(1dB) ) of -15 dBm
` Input third order intercept point IP3I of +4.7 dBm
NXP Semiconductors RF Manual 16th edition
31
1.5.2
Remote keyless entry, RF generic front-end with dedicated antenna for reception and transmission
Application diagram
antenna
filter
receiver
LNA
filter
mixer
LOW
FREQUENCY
CHIP SET
buffer
VCO
antenna
filter
transmitter
PA
driver
VCO
LOW
FREQUENCY
CHIP SET
bra851
Recommended products
Function
Product
RF bipolar
transistor
LNA
MMIC
Function
Driver
Product
RF bipolar
transistor
MMIC
Function
VCO
SiGe:C MMIC
SOT886
Type
PBR951
PRF957
PRF947
BGU6101
BGU6102
BGU6104
BGU7003W
Wideband
transistor
Gen-purp
wideband amp
Package
SOT323
SOT23
SOT363
SOT363
Type
PRF957
PBR951
BGA2771
BGA2866
Package
SOD323
SOD323
SOD523
SOD323
Type
BB148
BB149A
BB198
BB156
Wideband
transistor
Low-noise
SOT1209
wideband ampl.
Product
Varicap
diodes
Package
SOT23
SOT323
SOT323
VCO varicap
diodes
Function
Mixer
Function
Buffer
Function
Power
amplifier
Product
RF bipolar
transistor
Product
RF bipolar
transistor
Product
RF bipolar
transistor
MMIC
^ AEC-Q101 qualified (some limitations apply)
Product highlight:
Varicap diodes as VCO
Varicap diodes are principally used as voltage varicap capacitors,
with their diode function a secondary option. These devices are ideal
for voltage controlled oscillators (VCOs) in ISM band applications.
32
NXP Semiconductors RF Manual 16th edition
Features
`
`
`
`
Wideband
transistor
Excellent linearity
Excellent matching
Very low series resistance
High capacitance ratio
Wideband
transistor
Wideband
transistor
General-purpose
wideband
amplifier
Package
SOT343
SOT343
SOT343
Type
BFG410W
BFG425W
BFG480W
Package
SOT23
SOT323
SOT323
SOT416
Type
PBR951
PRF957
PRF947
PRF949
Package
SOT323
SOT23
SOT363
SOT363
SOT908
Type
PRF957
PBR951
BGA2771
BGA2866
BGA7124
1.5.3
Tire pressure monitoring system
Products
by application
Application diagram
antenna
filter
PA
driver
VCO
SENSOR
brb216
Recommended products
Function
PA
Function
Product
RF bipolar
transistor
Product
RF bipolar
transistor
Driver
MMIC
Function
VCO
Wideband
transistor
Wideband
transistor
Amplifier
Gen-purp
wideband amp
Product
Varicap diodes VCO varicap diodes
Package
SOT23
SOT323
SOT23
SOT323
SOT323
Type
BFR92A
BFR92AW
BFR94A^
BFR93AW
BFR94AW^
Package
SOT323
SOT23
SOT363
SOT363
SOT363
Type
PRF957
PBR951
BGA2031/1
BGA2771
BGA2866
Package
SOD523
SOD323
Type
BB198
BB156
^ AEC-Q101 qualified (some limitations apply)
Product highlight:
BGU6101 MMIC wideband amplifier
The BGU6101 is an unmatched MMIC featuring an integrated biasenable function and a wide supply voltage. It is part of a family of
three products (BGU6101, BGU6102, BGU6104), and is optimized for
2 mA operation.
Features
`
`
`
`
`
`
`
Applicable between 40 MHz and 6 GHz
13 dB gain and 0.8 dB NF at 450 MHz
50 Ω FM LNA: 15 dB gain and 1.4 dB NF at 100 MHz
Integrated temperature-stabilized bias for easy design
Bias current configurable with external resistor
Power-down mode current consumption < 1 μA
ESD protection > 1 kV Human Body Model (HBM) on all pins
NXP Semiconductors RF Manual 16th edition
33
1.5.4
Car radio receiver (CREST ICs: TEF6860HL, TEF6862HL)
Application diagram
FM input
filter
& AGC
IF
bandpass
filter
1st
mixer
2nd
mixer
variable
BW filter
IF limiter
FM deamplifier modulator
f
AGC &
hum filter
oscillator
V
FM MPX
oscillator
AM LNA
DET
RF input
filter
1st
mixer
IF
bandpass
filter
2nd
mixer
IF
bandpass
filter
IF
AM deamplifier modulator
AM audio
bra501
Recommended products
Function
AM LNA
Product
RF transistor
Function
Product
FM input
filter & AGC
RF diode
JFET
Varicap
diode
PIN diode
Package
SOT23
Type
BF862
Package
SOT23
SOT23
SOD523
SOD323
Type
BB201^
BB207
BAP70-02
BAP70-03
Function
AGC &
hum filter
Product
Function
Product
Oscillator
RF diode
RF diode
Package
Type
PIN diode
SOT363
BAP70AM
Varicap
diode
Package
SOD323
SOD523
Type
BB156
BB208-02
^ OIRT
Note 1:
The following recommended discrete products are applicable for
NICEPACS, CCC and DDICE: NICE:TEA6840H,TEA6845H,TEA684
6H, NICEPACS:TEA6848H,TEA6849H; CCC:TEF6901H,TEF6903H;
DDICE:TEA6721HL. All recommended discrete products are
applicable, excluding AM LNA in: DICE2:TEF6730HWCE.
Product highlight:
BF862 junction field effect transistor
Our tuning portfolio contains advanced products for car radio
reception applications and in-vehicle media platforms. The NXP
devices for this application ensure excellent reception quality and
ease of design-in. Performance is demonstrated in reference designs.
The high-performance junction FET BG862 is specially designed for
AM radio amplifiers.
34
NXP Semiconductors RF Manual 16th edition
Note 2:
Phones and portable radios (IC:TEA5767/68) use varicap BB202 as the
FM oscillator.
Features
` High transition frequency and optimized input capacitance for
excellent sensitivity
` High transfer admittance resulting in high gain
` Encapsulated in the versatile and easy-to-use SOT23 package
1.6 Industrial, scientific & medical (ISM)
1.6.1
Broadcast / ISM
Products
by application
Application diagram
typ. 0.5 kW
DVB-T
Driver stages
typ. 5 kW DVB-T
output power
harmonic
filter
power
monitor
TV exciter
DVB-T
8× final
amplifiers
Recommended broadcast products
Function
Product
Driver
HPA
Final
fmin (MHz)
fmax (MHz)
P1dB (W)
VDS (V)
η D (%)
G p (dB)
Package
Type
10
500
20
50
70
27.5
CW
SOT467C
BLF571
1
1400
35
32
63
19
CW
SOT467C
BLF642
1
1000
100
40
60
21
CW
SOT467
BLF871(S)
1
1000
140
50
49
21
CW
SOT467
BLF881(S)
10
1400
200
32
70
18
pulsed
SOT1121
BLF647P(S)*
BLF178P
Test signal
10
128
1200
50
75
28.5
pulsed
SOT539A
470
860
500
42
47
21
CW
SOT539A
BLF879P
470
860
300
50
46
21
CW
SOT1121
BLF884P(S)
470
860
600
50
46
21
CW
SOT539
BLF888A(S)
470
860
600
50
46
21
CW
SOT539
BLF888B(S)
Recommended ISM products
Function
HPA
Product
fmin (MHz)
fmax (MHz)
P1dB (W)
Matching
Driver
1
10
10
10
10
10
1300
2400
2400
2400
2400
2500
128
128
500
500
500
1300
2500
2500
2500
2500
12
600
1400
200
600
1400
250
180
140
200
250
I
I
I/O
I/O
I/O
I/O
Final
VDS (V)
28
50
50
50
50
50
50
28
28
28
28
η D (%)
G p (dB)
60
75
72
70
70
69
56
55
52
52
55
19
28
29
24
26
23
17
12
17.5
15
15
Test signal
CW
pulsed
pulsed
pulsed
pulsed
pulsed
CW
CW
CW
CW
CW
Package
Type
SOT975
SOT539
SOT539
SOT1121
SOT539
SOT539
SOT1121
SOT539
SOT502
SOT502
SOT539
BLF25M612(G)*
BLF174XR(S)*
BLF178XR(S)
BLF572XR(S)*
BLF574XR(S)*
BLF578XR(S)
BLF6G13L(S)-250P
BLF2425M6L(S)180P*
BLF2425M7L(S)140*
BLF2425M7L(S)200*
BLF2425M7L(S)250P*
* Check status in section 3.1, as this type is not yet released for mass production
Product highlight:
BLF578XR Power LDMOS transistor
Designed for broadband operation, this 1400 W extremely rugged
LDMOS power transistor supports broadcast and industrial
applications in the HF to 500 MHz band. This product is an enhanced
version of the BLF578. It uses NXP's XR process to provide maximum
ruggedness capability in the most severe applications without
compromising RF performance.
Features
`
`
`
`
`
`
Output power = 1400 W
Power gain = 23 dB
High Efficiency = 69 %
Integrated ESD protection
Excellent ruggedness
Excellent thermal stability
NXP Semiconductors RF Manual 16th edition
35
1.6.2
E-metering, RF generic front-end with a single antenna / ZigBee
Application diagram
Looking for a wireless microcontroller platform with chipsets, modules and supporting software?
See section 2.5.6 Setting the benchmark for ultra low-power and high-performance wireless
connectivity solutions.
antenna
filter
LNA
filter
mixer
buffer
SPDT
switch
filter
LOW
FREQUENCY
CHIP SET
VCO
PA
driver
VCO
bra850
Recommended products
Function
Product
SPDT Switch
RF diode
Bandswitch
diode
PIN diode
Function
Product
RF transistor
LNA
MMIC
Function
SiGe:C transistor
SiGe:C MMIC
Product
Driver
Package
SOD523
SOD323
Various
Various
Type
BA277
BA591
BAP51^
BAP1321^
Function
Package
Function
SOT886
Type
BFU610F
BFU630F
BFU660F
BFU690F
BFU710F
BFU725F/N1
BFU730F
BFU760F
BFU790F
BGU7003W
Package
Type
SOT343F
RF bipolar
transistor
Wideband
transistor
SOT343
BFG425W
MMIC
Gen-purp
wideband amp
SOT363
SOT363
BGA2771
BGA2866
Mixer
Buffer
Function
Medium power
amplifier
Function
VCO
Product
RF bipolar
transistor
Wideband
transistor
MMIC
Linear mixer
Product
RF bipolar
transistor
Wideband
transistor
Product
RF bipolar
transistor
Wideband
transistor
MMIC
Product
Varicap
diodes
Generalpurpose
wideband
amplifier
VCO varicap
diodes
Package
SOT343
SOT343
SOT343
SOT363
Type
BFG410W
BFG425W
BFG480W
BGA2022
Package
SOT23
SOT323
SOT323
SOT416
Type
PBR951
PRF957
PRF947
PRF949
Package
Type
SOT343
BFG21W
SOT908
SOT908
BGA6289
BGA6489
BGA6589
BGA7124
BGA7127
Package
SOD523
SOD323
Type
BB198
BB156
SOT89
^ Also available in ultra-small leadless package SOD882D
Product highlight:
BGA7127 MMIC medium power amplifier
The BGA7127 MMIC is a one-stage driver amplifier offered in a
low-cost, ultra-small SOT908 leadless package. It delivers 27 dBm
output power at 1 dB gain compression and superior performance
for various narrowband-tuned application circuits at frequencies up
to 2700 MHz.
36
NXP Semiconductors RF Manual 16th edition
Features
`
`
`
`
`
`
`
Operating range: 400 to 2700 MHz
16 dB small signal gain at 2 GHz
27 dBm output power at 1 dB gain compression
Integrated active biasing
3.3 / 5 V single-supply operation
Simple quiescent current adjustment
1 μA shutdown mode
1.6.3
RF microwave furnace application
Application diagram
oscillator
MPA
Products
by application
antenna
HPA
isolator
CONTROLLER
brb418
Recommended products
Function
Product
Package
SOT343R
RF transistor
Oscillator
SOT343F
Function
Product
Package
SOT89
MPA
(medium
power
amplifier)
SOT908
SOT89
SOT908
SOT89
SOT908
MMIC
Type
BFG410W
BFG424W
BFG425W
BFG424F
BFU610F
BFU630F
BFU660F
BFU690F
BFU710F
BFU725F/N1
BFU730F
BFU760F
BFU790F
Type
BGA6289
BGA6489
BGA6589
BGA7124
BGA7024
BGA7127
BGA7027
BGA7130
* Check status in section 3.1, as this type is not yet released for mass production
Function
Product
Driver
HPA
Final
fmin (MHz)
fmax (MHz)
P1dB (W)
ηη D (%)
G p (dB)
1
2400
2400
2400
2400
2500
2500
2500
2500
2500
12
180
140
200
250
60
55
52
52
55
19
12
17.5
15
15
Product highlight:
New family for ISM 2.45 GHz
NXP's 6th and 7th generation LDMOS technology, along with advanced
packaging concepts, enables power amplifiers that deliver best-in-class
performance at 2.45 GHz. The unsurpassed ruggedness and low thermal
resistance, along with the intrinsic efficiency of the LDMOS process,
make these transistors ideally suited for furnace applications.
test signal
CW
CW
CW
CW
CW
Package
Type
SOT975
SOT539
SOT502
SOT502
SOT539
BLF25M612(G)
BLF2425M6L(S)180P
BLF2425M7L(S)140*
BLF2425M7L(S)200
BLF2425M7L(S)250P*
Features
`
`
`
`
Excellent ruggedness
Consistent device performance
Low thermal resistance for unrivalled reliability
Ease of design
NXP Semiconductors RF Manual 16th edition
37
1.6.4
RF plasma lighting
Looking for more information on RF plasma lighting?
See section 2.5.2 RF-driven plasma lighting: The next revolution in light
sources are powered by solid-state RF technology
Application diagram
RF (plasma) bulb
oscillator
MPA
HPA
CONTROLLER
brb436
Recommended products
Function
Product
RF transistor
Oscillator
Function
Product
Package
Type
SOT143
SOT143
SOT23
SOT323
SOT323
SOT323
SOT343
SOT343
SOT363
SOT416
BFG520
BFG325/XR
BFR520
BFR92AW
BFR93AW
BFS520
BFG520W
BFG325W/XR
BFM520
BFR520T
Package
Type
BGA6289
BGA6489
BGA6589
BGA7124
BGA7024
BGA7127
BGA7027
BGA7130
SOT89
MPA
(medium
power
amplifier)
Function
SOT908
SOT89
SOT908
SOT89
SOT908
MMIC
Product
Driver
HPA
Final
fmin (MHz)
fmax (MHz)
P1dB (W)
Package
Type
1
10
1
10
10
10
10
10
688
700
700
2400
2400
2400
2400
2500
500
1000
500
500
500
500
500
1000
1000
1000
2500
2500
2500
2500
12
20
100
300
600
600
1200
1400
200
135
160
180
140
200
250
SOT975
SOT467C
SOT467
SOT502
SOT539A
SOT539
SOT539A
SOT539
SOT502
SOT502
SOT502
SOT539
SOT502
SOT502
SOT539
BLF25M612(G)*
BLF571
BLF871(S)
BLF573(S)
BLF574
BLF574XR(S)*
BLF578
BLF578XR(S)
BLF6G10(LS)-200RN
BLF6G10(LS)-135RN
BLF6G10(LS)-160RN
BLF2425M6L(S)180P*
BLF2425M7L(S)140
BLF2425M7L(S)200*
BLF2425M7L(S)250P
* Check status in section 3.1, as this type is not yet released for mass production
Product highlight:
LDMOS enables RF lighting
NXP's 50 V high-voltage LDMOS process enables highest power at
the extreme ruggedness levels necessary for this kind of application.
BLF578: 1200 W CW operation - highest power LDMOS
38
NXP Semiconductors RF Manual 16th edition
Features
`
`
`
`
`
Highest power device
Unprecedented ruggedness
Low thermal resistance for reliable operation
Consistent device performance
Broadband device for flexible use
1.6.5
Medical imaging
Looking for more information on medical applications?
See section 2.5.1 Medical applications driven by RF power: From imaging
to cancer treatment, a flexible and versatile technology in the doctor’s toolbox
Products
by application
Application diagram
Magnet
X GRADIENT
AMPLIFIER
Gradient coils
RF coils
Y GRADIENT
AMPLIFIER
WAVEFORM
GENERATOR
Z GRADIENT
AMPLIFIER
RF amplifier
RF
ELECTRONICS
COMPUTER
ADC
IMAGE
DISPLAY
brb434
Recommended products
Function
Product
Driver
HPA
Final
fmin (MHz)
fmax (MHz)
P1dB (W)
1
10
1
10
10
10
10
10
688
700
700
2400
2400
2400
2400
2500
500
1000
500
500
500
500
500
1000
1000
1000
2500
2500
2500
2500
12
20
100
300
600
600
1200
1400
200
135
160
140
180
200
250
Package
Type
SOT975
SOT467C
SOT467
SOT502
SOT539A
SOT539
SOT539A
SOT539
SOT502
SOT502
SOT502
SOT502
SOT539
SOT502
SOT539
BLF25M612(G)*
BLF571
BLF871(S)
BLF573(S)
BLF574
BLF574XR(S)*
BLF578
BLF578XR(S)
BLF6G10(LS)-200RN
BLF6G10(LS)-135RN
BLF6G10(LS)-160RN
BLF2425M7L(S)140
BLF2425M6L(S)180P*
BLF2425M7L(S)200*
BLF2425M7L(S)250P
* Check status in section 3.1, as this type is not yet released for mass production
Product highlight:
LDMOS in emerging medical applications
NXP’s line of 50 V high-voltage LDMOS devices enables highest
power output and features unequalled ruggedness for pulsed
operation in MRI and NMR applications. The high power densities
enable compact amplifier design.
Features
`
`
`
`
Best broadband efficiency
Highest power (density) devices
Unrivalled ruggedness
Consistent device performance
NXP Semiconductors RF Manual 16th edition
39
1.7 Aerospace and defense
1.7.1
Microwave products for L- and S-band radar and avionics applications
Application diagram
RF signals
video, timing, bias voltage,
control and data
I-f signals
RF small signal
ANTENNA
DRIVE
RF POWER BOARD
RF power
PLL VCO
MPA
mixer
HPA
ISOLATOR
VGA
local oscillator
duplexer
DISPLAY
AND
CONTROL
local oscillator signal
WAVEFORM
GENERATOR
PLL VCO
control and timing
mixer
DETECTOR
video
LNA
IF amplifier
brb410
Recommended products
Function
Product
Driver
HPA
Final
fmin (MHz)
fmax (MHz)
P1dB (W)
VDS (V)
η D (%)
G p (dB)
Package
Type
500
1030
1030
2700
2700
3100
400
500
960
960
1030
1030
1200
1200
1200
2700
2700
2900
3100
3100
1400
1090
1090
3100
3500
3500
1000
1400
1215
1215
1090
1090
1400
1400
1400
3100
2900
3300
3500
3500
25
10
2
6
30
20
600
130
250
500
200
600
250
500
250
130
350
150
120
350
50
36
36
32
32
32
50
50
36
50
28
48
36
50
50
32
32
32
32
32
50
40
33
50
45
57
50
50
50
65
52
45
50
55
50
50
47
43
43
19
16
16
15
13
15.5
20
17
13.5
17
20
17
15
17
17
12
13.5
13.5
11
10
SOT467C
SOT467C
SOT538A
SOT975C
SOT1135
SOT608
SOT539
SOT1135
SOT502A
SOT634A
SOT502
SOT539A
SOT502A
SOT539A
SOT502
SOT922-1
SOT539
SOT922-1
SOT502
SOT539
BLL6H0514-25
BLA1011-10
BLA1011-2
BLS6G2731-6G
BLS6G2735L(S)-30
BLS6G3135(S)-20
BLU6H0410L(S)-600P
BLL6H0514L(S)-130
BLA0912-250R
BLA6H0912-500
BLA6G1011LS-200RG
BLA6H1011-600
BLL6G1214L-250
BLL6H1214-500
BLL6H1214L(S)-250
BLS6G2731S-130
BLS7G2729L(S)-350P
BLS7G2933S-150
BLS6G3135(S)-120
BLS7G3135L(S)-350P*
* Check status in section 3.1, as this type is not yet released for mass production
Product highlight:
BLS7G2729L-350P LDMOS S-band radar power transistor
Designed for S-band operation (2.7 to 2.9 GHz), this internally
matched LDMOS power transistor for rader applications delivers an
output power of 350 W and a power gain of 13.5 dB at an efficiency
of 50 %.
40
NXP Semiconductors RF Manual 16th edition
Features
`
`
`
`
`
Easy power control
Integrated ESD protection
High flexibility with respect to pulse formats
Excellent ruggedness
Excellent thermal stability
LNA (low-noise
amplifier) & Mixer
Function
Product
RF transistor
SiGe:C transistor
Product
Package
Type
SOT343F
BFU710F
BFU725F/N1
BFU730F
Package
Type
SOT363
BGA2800
BGA2801
BGA2815
BGA2816
BGA2850
BGA2865
BGA2866
BGM1014
BGM1013
BGM1012
Package
Type
SOT616
TFF1003HN
TFF1007HN
TFF11xxxHN^
MMIC
IF amplifier
MMIC
General-purpose
wideband
amplifiers
Function
PLL/VCO
LO generator
Function
Single VGA (variablegain amplifier)
Function
Dual VGA (variablegain amplifier)
Function
MPA
(medium power
amplifier)
Product
RF IC
Product
MMIC
Product
MMIC
Product
MMIC
SiGe:C IC
Gain range
Package
Type
31 dB
SOT617
BGA7210
BGA7204
Gain range
Package
Type
24 dB
28 dB
SOT617
BGA7350
BGA7351
PL (1 dB) @ 940 MHz
Package
Type
24 dBm
28 dBm
25 dBm
28 dBm
30 dBm
Products
by application
Function
BGA7024
BGA7027
BGA7124
BGA7127
BGA7130
SOT89
SOT908
^ 17 different types with LO ranges: 7-15 GHz, see 3.4.4
Product highlight:
BGA28xx-family of IF gain blocks
The BGA28xx IF gain blocks are silicon Monolitic Microwave
Integrated Circuit (MMIC) wideband amplifiers with internal
matching circuitry in a 6-pin SOT363 plastic SMD package.
Features
`
`
`
`
No output inductor necessary when used at the output stage
Internally matched to 50 Ω
Reverse isolation > 30 dB up to 2 GHz
Good linearity with low second order
NXP Semiconductors RF Manual 16th edition
41
2. Focus applications, products & technologies
2.1 Wireless communication infrastructure
2.1.1
Build a highly efficient signal chain with RF components for transmit line-ups and receive chains
As a global leader in RF technology and component design, NXP Semiconductors offers a complete
portfolio of RF products, from low- to high-power signal conditioning that delivers advanced performance
and helps simplify your design and the development process. Our solutions range from discrete devices to
modular building blocks, so you can design a highly efficient signal chain.
State-of-the-art QUBiC4
NXP’s industry-leading QUBiC4 technology, available since
2002, has been widely deployed in the field and offers
more consistent parameter performance compared to GaAs
technology. It speeds the migration from GaAs to silicon and
delivers more functionality in less space. High integration
reduces the design footprint and enables more costcompetitive designs. It also improves reliability and offers
significant savings in manufacturing expenditures.
Application diagram of base station
(all cellular standards and frequencies)
The block diagram below shows base station transmit (upper
part, Tx) and receive (lower part, Rx) functions, and includes
the Tx feedback function (middle part, Tx feedback).
DPD
CFR
DUC
DDC
Power Amplifier
DVGA RF-BP
PLL
VCO
Dual
DAC
0
HPA
90
Transmitter
Q
IF-SAW
JEDEC
IF
MPA
DVGA Mixer+LO
Tower Mounted
Amplifier
Tx
Att.
ADC
LO
Duplexer
Digital
Front
End
(JEDEC) Interface
OBSAI / CPRI
Digital Baseband
JEDEC Interface
IQ-Modulator
I
JEDEC Interface
RF-SAW
Dual
ADC
Clock
Generator
Jitter Cleaner
BP or LP
Dual
DVGA
Data Converter
IF-SAW
RF Small Signal
Digital wideband VGAs with high linearity & flexible
current settings
These 6-bit digital VGAs (BGA7204 & BGA7210) offer high
linearity (35 dBm @ 2.2-2.8 GHz) and high output power
(23 dBm @ 2.2-2.8 GHz) across a large bandwidth without
external matching. Smart routing with no connection crosses
simplifies design and decreases footprint by 25%.
42
NXP Semiconductors RF Manual 16th edition
Dual
Mixer
PLL
VCO
RF Power
LNA +VGA
Rx
LNA
TX / RX1
µC
RX2
Filter Unit
LNA+VGA
Micro Controller
The unique power-save mode can effectively reduce the current
consumption in TDD systems up to 45%. The BGA7210 adds
flexible current distribution across its two amplifiers, depending
on the attenuation state, to save current.
Medium power amplifier
The NXP MPAs (BGA7x2x/BGA7x3x) are based on a one-stage
amplifier, available in a low-cost surface-mount package.
It delivers a set of available output power from 24 to 30 dBm.
All cover the frequency range from 400 to 2700 MHz.
Low-noise amplifiers up to 2.8 GHz
Designed for high linearity and low noise, these monolithic
SiGe:C BiCMOS LNAs (BGU7051, BUG7052 & BGU7053) deliver
18-24 dB gain, 3-5 dB more gain than equivalents, along with
low power consumption. The RF input power overdrive of
20 dBm and the high ESD protection
(HBM 4 kV; CDM 2 kV) make these
devices extremely rugged.
Integrated biasing circuitry,
3.3 V supply voltage and low
external component count (only
6 capacitors) ensures easy system
integration.
Integrated base station LNAs with lowest NF for
the complete LNA chain
NXP provides the industry’s only fully Integrated base station
LNA that can be tailored to the needs of individual OEMs for
optimal fit in their Rx line-ups. By integrating three stages in
one monolithic design, these SiGe:C BiCMOS LNAs (BGU706x)
deliver the industry’s lowest noise figure for a receive chain
(0.9 dB), while saving up to 80% in component cost. Additionally,
the analog gain control up to 35 dB, RF input power overdrive
of 10-15 dBm, and high linearity (0.9-2.5 dBm IP3I at maximum
gain) make them very suitable in small cell sizes.
IQ modulators
The BGX7100 and BGX7101 devices combine high performance,
high linearity I and Q modulation paths for use in radio
frequency up-conversion. It supports RF frequency outputs in
the range from 400 to 4000 MHz. The BGX710x IQ modulator
is performance-independent of the IQ common mode voltage.
The modulator provides a typical output 1 dB compression point
(PL(1dB)) value of 12 dBm and a typical 27 dBm output thirdorder intercept point (IP3O). Unadjusted sideband suppression
and carrier feed through are 50 dBc and −45 dBm respectively.
A hardware control pin
provides a fast power-down/
power-up mode functionality
which allows significant
power saving. The BGX7101
is 4 dB higher gain compared
to the BGX7100.
Dual mixers
The BGX722x device combines a pair of high-performance,
high-linearity down-mixers for use in receivers having a common
local oscillator (e.g. having main and diversity paths). Each mixer
provides an input 1 dB compression point
(P1dB) above 13 dBm, with an input thirdorder intercept point (IIP3) of 26 dBm.
The small-signal noise figure (NF) is below
10 dB whereas under large signal blocking
conditions the NF is typically 19 dB.
Isolation between mixers is at least 40 dB.
Synthesizer with an integrated VCO (LO generator)
The BGX7300 is a low phase noise wideband synthesizer
with an integrated VCO which allows the implementation of
an integer-N or fractional-N Phase-Locked Loop (PLL). The
integrated voltage controlled oscillator (VCO) supports a
fundamental frequency range from 2.2 GHz up to 4.4 GHz.
The BGX7300 has dual differential RF outputs, each with output
power up to +5 dBm. The VCO frequency can by divided by
1/2/4/8/16/32 before being fed to the RF outputs. Hence the
generated output frequency can be as low as 68.75MHz. For
isolation purpose, each RF output can be muted or forced into
power-down mode using a hardware pin or SPI sofware control.
A dedicated differential input stage lets the BGX7300 work with
an external VCO. Most of the characteristics are programmable
via a 3- or 4-wire Serial Peripheral Interface bus (SPI). Each VCO
is powered from an internally regulated voltage source providing
sufficient power supply rejection. The device is designed to
operate from 3.3 V nominal supply voltage connected to the
supply pins.
Selection guides of the listed components are available
in Chapter 3 (3.4.1 & 3.4.2).
NXP Semiconductors RF Manual 16th edition
43
Focus applications,
products & technologies
Dual digital IF VGAs
The BGA7350 and BGA7351 are dual, independently controlled
receive IF VGAs that operate from 50 to 250 MHz. Integrated
matching improves performance in the receiver chain, because
the VGA can drive the filter directly into the analog-to-digital
converter to ensure a constant input level. The BGA7350 has a
gain range of 24 dB, while the BGA7351 has a range of 28 dB.
For both devices, the maximum gain setting delivers at least
16 dBm output power at 1 dB gain
compression (P1dB). For gain control,
each amplifier uses a separate digital
gain-control code, which is provided
externally through two sets of five
bits. The resulting gain flatness
is 0.1 dB.
2.1.2
Digital wideband VGAs with high linearity & flexible current settings
NXP digital VGAs BGA7204 & BGA7210
These 6-bit digital VGAs offer high linearity (35 dBm @ 2.2-2.8 GHz) and high output power
(23 dBm @ 2.2-2.8 GHz) across a large bandwidth without external matching. Smart routing with no
connection crosses simplifies design and decreases footprint by 25%. The unique power-save mode
can effectively reduce the current consumption in TDD systems up to 45%. The BGA7210 adds flexible
current distribution across its two amplifiers, depending on the attenuation state, to save current.
Key features
` Internally matched for 50 Ω
- BGA7204 = 0.4 to 2.75 GHz
- BGA7210 = 0.7 to 3.8 GHz
` High maximum power gain
- BGA7204 = 18.5 dB
- BGA7210 = 30 dB
` High output third-order intercept, IP3O
- BGA7204 = 38 dBm
- BGA7210 = 39 dBm
` Attenuation range of 31.5 dB, 0.5 dB step size (6 bit)
` High output power, PL(1dB)
- BGA7204 = 21 dBm
- BGA7210 = 23 dBm
` Fast switching power-save mode (power down pin)
` Digitally controlled current setting from 120 to 195 mA with
an optimum at 185mA (BGA7210 only)
` Simple control interfaces
- BGA7204 SPI and parallel
- BGA7210 SPI
` ESD protection on all pins (HBM 4 kV; CDM 2 kV)
` HVQFN32 (5 x 5 x 0.85 mm)
Key benefits
` Wideband operation supports platforms with multiple
frequency ranges
` Smart lead routing produces simpler design, decreases
footprint by 25%
` Power-save mode can reduce current consumption in
TDD systems up to 45%
` Flexible current setting (BGA7210) saves power
` Monolithic design enables high quality
44
NXP Semiconductors RF Manual 16th edition
Applications
` GSM, W-CDMA, WiMAX, LTE base stations
` Wireless point-to-point and repeaters
` Cable modem termination systems
` Temperature-compensation circuits
OM7921 – BGA7210 customer evaluation kit
(also available OM7922 – BGA7204 CEK)
Designed for the transmit path of wireless architectures, these
VGAs can be used to control the power level to the power
amplifier. The up-converted signals are fed to the VGA, and
thus help compensate for variations in cell load and the
presence of aging infrastructure equipment.
The BGA7204 operates in the range between 0.4 and 2.75 GHz,
while the BGA7210 operates between 0.7 and 3.8 GHz. By
supporting more than 2 GHz of bandwidth, these devices can
be used to populate several frequency bands.
An integrated power-save mode makes it possible to reduce
consumption even more, to just 15 mA during a receive slot.
This can effectively reduce the current consumption in Time
Division Duplexing (TDD) systems up to 45%.
The BGA7210 builds on the BGA7204 by adding flexible
current setting across its two amplifiers, depending on the
attenuation state. The serial peripheral interface is used to set
the attenuation state, and, using a similar method, to set the
current through the first and second amplifiers. The desired
configuration is set by software and enables current savings of
as much as 75 mA.
Higher output power, higher peak gain, and smaller attenuator
step sizes enable engineers to use fewer components and
provide greater control to maintain and optimize performance
in the transmit chain.
Smart routing (with no connection crosses) reduces the number
of board connections, simplifies design-in, and decreases the
design footprint by 25%. The monolithic design increases
reliability and ensures high quality.
Schematic of BGA7210 evaluation board (OM7921)
VSUP
C23
L1
C22
C26
C12
PUPMXG/
VDDD VCC1
CLK SERIN SS SEROUT
PWRDN
24
23
22
21 20
19
17
VDDA
16
C25
C14
C24
C18
15
VCC2
C17
C1
RF_IN 29
L2
C27
12 RF_OUT
RF_OUT
Csh
aaa-000665
Digital VGAs
Type
number
BGA7204
BGA7210
Package
SOT617-3
SOT617-3
frange
[min]
(MHz)
frange
[max]
(MHz)
@ VCC
(V)
@ ICC
[typ]
(mA)
Gp @
minimum
attenuation
(dB)
Attenuation
range
(dB)
IP3O
[typ]
(dBm)
PL(1dB)
[typ]
(dBm)
NF
[typ]
(dB)
400
700
5
115
18.5
31.5
38.0
21.0
7.0
700
1450
5
115
18.5
31.5
37.5
21.0
6.5
1450
2100
5
115
17.5
30.5
36.0
20.5
6.5
2100
2750
5
115
16.5
30.0
34.0
20.0
7.0
700
1400
5
185
30.0
31.5
39.0
21.0
6.5
1400
1700
5
185
29.5
31.5
37.0
21.0
6.5
1700
2200
5
185
29.0
31.5
35.0
21.0
6.5
2200
2800
5
185
28.0
30.5
35.0
23.0
7.0
3400
3800
5
185
26.0
29.5
27.0
19.0
8.0
NXP Semiconductors RF Manual 16th edition
45
Focus applications,
products & technologies
The NXP BGA7204 and BGA7210 are monolithic digital
variable-gain amplifiers (VGAs) that operate over an extremely
wide range with high linearity and high output power.
2.1.3
Doherty amplifier technology for state-of-the-art wireless infrastructure
Best-in-class PA designs enable considerable energy savings
NXP’s latest power amplifier designs let the wireless infrastructure run with significantly higher energy
efficiency – towards “Green Base Stations”. In order to achieve the highest efficiencies currently possible,
NXP combines its latest generations of LDMOS technology (Gen7 & 8) with the Doherty concept. The high
performance of our LDMOS technology, matched with the efficiency of the Doherty technology, creates
power amplifiers that offer high efficiency and high gain, are easily linearizable, and are more cost-effective
to operate.
Developed by W.H. Doherty in 1936, the Doherty amplifier remained largely unused because the dominant
mobile communication system modulation techniques (FM, GMSK, and EDGE) did not require high peak-toaverage ratio (PAR) signals. For today's base stations, however, transmitting 3G, 4G, and multi-carrier signals
makes the high power and added efficiency of the Doherty approach the preferred option for most service
providers.
NXP’s Doherty designs ensure high efficiency while maintaining a very similar peak power capability of two
transistors combined. The input and output sections are internally matched, benefiting the amplifiers with
high gain, good gain flatness, and phase linearity over a wide frequency band.
Integrated Doherty
NXP offers the world’s first fully integrated Doherty designs.
From the outside these devices look like ordinary transistors.
In fact, they are completely integrated Doherty amplifiers that
readily deliver the associated high efficiency levels for base
station applications. With the ease of design-in of an ordinary
Class AB transistor, they also provide significant
space and cost savings.
46
NXP Semiconductors RF Manual 16th edition
Key features & benefits
` Contains splitter, main and peak amplifier, delay lines,
and combiner in one package
- 40% efficiency @ 10 W average power
- No additional tuning in manufacturing
` Design is as easy as with a single Class AB transistor
` Ideally suited for space-constrained applications
(e.g. remote radio heads, antenna arrays)
` Currently available for TD-SCDMA (BLD6G21L(S)-50) and
W-CDMA (BLD22L(S)-50); see section 3.7.1.4 for details
Key features & benefits
` Most efficient Doherty amplifier designs available to date
` Production-proven, consistent designs
` NXP’s LDMOS provides unsurpassed ruggedness
` Currently available for the following frequency bands:
- 728 to 821 MHz
- 869 to 960 MHz
- 1805 to 1880 MHz (DCS)
- 1930 to 1990 MHz (PCS)
- 1880 to 2025 MHz (TD-SCDMA)
- 2110 to 2170 MHz (UMTS / LTE)
- 2300 to 2400 MHz (WiBRO / LTE)
- 2500 to 2700 MHz (WiMAX / LTE)
- 3300 to 3800 MHz (WiMAX)
Focus applications,
products & technologies
Discrete Doherty amplifiers
In addition to the integrated versions, NXP offers product
demonstrators for very efficient, high-power, discrete two- and
three-way Doherty amplifiers. The two-way designs, based on
the BLF7G22LS-130 device, deliver 47.0 dBm (50 W) with 43%
efficiency and 15.7 dB gain for W-CDMA applications.
All of our product demonstrators are supported by
comprehensive documentation and hardware.
Please see section 3.7.1.8 for a complete list of available
designs.
Our flagship three-way Doherty demonstrator achieves
48% efficiency at 48 dBm (63 W) average output power and
15.0 dB gain with a two-carrier W-CDMA signal. The current
design covers the W-CDMA standard for band 1 operation
and is tailored towards high-yield, minimum-tuning, volume
manufacturing.
Power LDMOS Doherty designs
Freq band
(MHz)
PPEAK
(dBm)
POUT-AVG
(dBm)
VDS
(V)
Gain
(dB)
Drain Eff.
(%)
Type
Main transistor
Peak transistor
869-894
59.2
50.4
28
16
52
3-WAY
BLF7G10LS-250
2x BLF7G10LS-250
920-960
57.3
49.3
30
16
50
ASYM
BLF8G10LS-160
BLF7G10LS-250
1526-1555
56.6
48.6
28
18.4
42
SYM
BLF7G15LS-200
BLF7G15LS-200
1805-1880
58.6
51
28
16
47.6
3-WAY
BLF7G20LS-200
2x BLF7G20LS-200
1930-1990
58.2
50
28
16
40
SYM
BLF7G20LS-250P
BLF7G20LS-250P
2010-2025
52.2
44
28
15.6
43
SYM
1/2 BLF7G21LS-160P
1/2 BLF7G21LS-160P
2110-2170
56.5
49
28
14.2
46
ASYM
BLF7G22LS-160
BLF7G22LS-200
2110-2170
57.2
49.2
28
16
47
3-WAY
BLF7G22LS-160
2x BLF7G22L(S)-160
2300-2400
56.8
48.5
30
15
42
3-WAY
BLF7G24LS-100
2x BLF7G24LS-100
2620-2690
55.2
47.2
30
15
41
ASYM
BLF7G27LS-100
BLF7G27LS-140
NXP Semiconductors RF Manual 16th edition
47
2.1.4
The new generation of LDMOS RF power for wireless infrastructures: NXP's Gen8
NXP announced last year the 8th generation of its renowned RF power device portfolio for base stations.
Listening carefully to the world’s leading infrastructure providers and understanding their requirements, we
took a holistic approach to the development of Gen8. This means that we scrutinized every detail of a power
transistor and reconsidered the entire “transistor system” to ceate a new generation that performs markedly
better than its predecessors, and its competitors, and again sets standards for the industry.
Gen8 addresses the key trends in the wireless
infrastructure industry
` Increasing signal bandwidths up to 100 MHz to enable
full-band operation
` Cost sensitivity: peak powers up to 270 Watts in SOT502sized packages
` Reduction in the size/weight/volume of the cabinet
` The ongoing need for greater electrical efficiency to reduce
cooling requirements and operational expenditures
` Ever-increasing output power
` The need to deploy multi-standard and future-proof
solutions
Gen8 is the answer to all these often conflicting requirements.
The package and die design, as well as the input and output
match structures, have been optimized to enable wideband,
affordable, compact, multi-standard, and highly efficient
Doherty power amplifiers. Solutions for all cellular frequency
bands are currently being sampled and are in production or
will be released throughout 2012.
The first wave of Gen8 transistors
fmin
(MHz)
fmax
(MHz)
P1dB
(W)
Matching
Package
Planned
release
BLF8G10L(S)-160
920
960
160
I/O
SOT502
Released
BLF8G10L(S)-160V
700
1000
160
I/O
SOT1244
Released
BLF8G10LS-200GV
700
1000
200
I/O
SOT1244C
Q412
BLF8G10LS-270GV
700
1000
270
I/O
SOT1244C
Q412
BLF8G10L(S)-300P
850
960
300
I/O
SOT539
Q312
BLF8G10LS-400PGV
700
1000
400
I/O
SOT1242C
Q412
BLF8G20L(S)-200V
1800
2000
200
I/O
SOT1120
Released
BLF8G20LS-270GV
1800
2000
270
I/O
SOT1244C
Q412
BLF8G20LS-270PGV
1800
2000
270
I/O
SOT1242C
Q412
BLF8G22LS-160BV
2000
2200
160
I/O
SOT1120B
Released
BLF8G22LS-200GV
2000
2200
200
I/O
SOT1244C
Q312
BLF8G22LS-270GV
2000
2200
270
I/O
SOT1244C
Q312
BLF8G22LS-400PGV
2000
2200
400
I/O
SOT1242C
Q312
BLF8G24L(S)-200P
2300
2400
200
I/O
SOT539
Q312
BLF8G27LS-140G
2500
2700
140
I/O
SOT502E
Q412
BLF8G27LS-140V
2600
2700
140
I/O
SOT1244B
Q412
BLF8G27LS-200PGV
2500
2700
200
I/O
SOT1242C
Q412
BLF8G27LS-280PGV
2500
2700
280
I/O
SOT1242C
Q412
Type
Note: All devices are internally matched (I/O)
48
NXP Semiconductors RF Manual 16th edition
Description
Gen8 ceramic LDMOS transistor for GSM, WCDMA &
LTE applications
Gen8 ceramic LDMOS transistor for GSM, WCDMA &
LTE applications
Gen8 ceramic LDMOS transistor for GSM, WCDMA &
LTE applications (gull-wing)
Gen8 ceramic LDMOS transistor for GSM, WCDMA &
LTE applications (gull-wing)
Gen8 ceramic push-pull LDMOS transistor for GSM,
WCDMA & LTE applications (gull-wing)
Gen8 ceramic push-pull LDMOS transistor for GSM,
WCDMA & LTE applications (gull-wing)
Gen8 ceramic LDMOS transistor for GSM & LTE
applications
Gen8 ceramic LDMOS transistor for GSM & LTE
applications (gull-wing)
Gen8 ceramic push-pull LDMOS transistor for GSM &
LTE applications (gull-wing)
Gen8 ceramic LDMOS transistor for WCDMA & LTE
applications
Gen8 ceramic LDMOS transistor for WCDMA & LTE
applications (gull-wing)
Gen8 ceramic LDMOS transistor for WCDMA & LTE
applications (gull-wing)
Gen8 ceramic push-pull LDMOS transistor for
WCDMA & LTE applications (gull-wing)
Gen8 ceramic push-pull LDMOS transistor for
WCDMA & LTE applications
Gen8 ceramic LDMOS transistor for WCDMA & LTE
applications (gull-wing)
Gen8 ceramic LDMOS transistor for WCDMA & LTE
applications
Gen8 ceramic push-pull LDMOS transistor for
WCDMA & LTE applications (gull-wing)
Gen8 ceramic push-pull LDMOS transistor for
WCDMA & LTE applications (gull-wing)
2.2 Broadband communication infrastructure
2.2.1
Connecting people, protecting your network: NXP's CATV C-family for the Chinese
SARFT standard
Specially designed for the Chinese Hybrid Fiber Coax (HFC) infrastructure, NXP's CATV C-family offers a
total solution for cable TV networks. It is both flexible enough for connecting rural communities as part of
China’s "Connecting to Every Village" program and powerful enough for upgrading major cities from analog
Film and Television (SARFT) standard, and cover most HFC applications in the 550 MHz to 1 GHz range.
Products
` BGY588C, BGE788C and CGY888C push-pull amplifiers
` BGD712C, CGD944C, CGD942C, CGD982HCi, CGD985HCi
and CGD987HCi power doublers
` BGO807C, BGO807CE optical receivers
Benefits
` Compliant with Chinese SARFT HFC networks standard
` Transparent cap allows confirmation of product authenticity
` Rugged construction
` Highest by Design internal ESD protection
Features
` Excellent linearity, stability, and reliability
` High power gain
` Extremely low noise
` Silicon nitride passivity
` GaAs HFET dies for high-end devices
The BGY588C, BGE788C and BGD712C devices cover
the frequency range from 550 MHz to 750 MHz. Extending
the C-family portfolio into the high-end segment, the
CGD944C, CGD942C, CGY888C and BGO807C operate
between 40 and 870 MHz and have been specifically tested
under Chinese raster conditions. Manufactured using our GaAs
HFET die process, the CGD942C and CGD944C are high-gain,
high-performance 870 MHz power doublers. The CGD982HCi,
CGD985HCi and CGD987HCi operate from 40 to 1003 MHz
and are specified for 870 MHz and 1 GHz. These power
doublers are optimized for the Chinese SARFT standard. They
are capable of satisfying the demanding requirements of topend applications, including high-power optical nodes.
Our GaAs HFET MMIC dies are designed to provide the best
ESD protection levels, without the external TVS components
normally used with GaAs pHEMT devices.
All CATV C-type devices feature a transparent cap that makes
it easy to distinguish them from counterfeit products.
C-family application information
NXP C-family by application
Application
BGY588C
BGE788C
CGY888C
BGD712C
BGO807C
CGD942C
BGO807CE
CGD944C
CGD982HCi
CGD985HCi
CGD987HCi
Optical node
•
•
•
•
Optical receiver
•
•
•
•
Distribution amplifier
•
•
•
•
Line-extender amplifier
•
•
•
•
Terminating amplifier
•
•
•
NXP Semiconductors RF Manual 16th edition
49
Focus applications,
products & technologies
to high-end digital services. All C-type devices are compliant with the Chinese State Administration for Radio,
BGY588C, BGE788C, and CGY888C
The last stage of an HFC network structure is called
IN
port
a ‘terminating amplifier‘ or, since it's close to the subscriber, a
"user amplifier." terminating amplifier requires a single module
PAD
OUT
port
EQ
BGY588C
BGE788C
CGY888C
such as the BGY588C for 550 MHz, the BGE788C for 750 MHz
and the CGY888C for 870 MHz systems. These modules fit
bra820
perfectly in the Chinese "Connecting to Every Village" projects.
BGD712C
The BGD712C is a 750 MHz, 18 dB power doubler module.
It has been designed for 750 MHz optical nodes including
IN
port
PAD
BGY785A
BGY787
ordinary or optical receivers and distribution amplifiers.
It can also be used in line-extender amplifiers together with
OUT
port
EQ
BGD712C
bra821
a 750 MHz push-pull module, such as the BGY785A or the
BGY787. As such it can be used widely in Chinese "Connecting
to Every Village" projects.
CGD944C and CGD942C
Our full GaAs power doubler modules, the CGD942C and
the CGD944C offer high output power and better CTB
and CSO than other modules. Designed for high-end HFC
networks containing optical nodes with multiple out-ports,
these modules enable each port to directly cover at least
125 subscribers. These two devices are ideal when used in
upgrading HFC networks to 870 MHz.
CGD94xC / CGD98xHCi
PAD
CGD94xC / CGD98xHCi
PAD
BGO807C
The BGO807C is an integrated optical receiver module that
provides high output levels with integrated temperaturecompensated circuitry. In an optical node design, the
BGO807C enables a high performance / price ratio
and ruggedness. When upgrading an HFC network from
analog to digital, the BGO807C is the perfect fit.
EQ
PAD
BGO807C
BGO807CE
CGD982HCi, CGD985HCi, and CGD987HCi
Our newest GaAs power doubler modules, the CGD982HCi,
the CGD985HCi and the CGD987HCi are customized designs
for CATV hybrid fiber coax Chinese networks operating in the
40 to 1003 MHz bandwidth, and specified with the Chinese
cable TV network official loading raster on top of the
traditional NTSC loading rasters. For use in optical notes for
fiber deep applications where the output power level needs
to be at its highest.
OUT
port 1
H
L
(N + 1)
OUT
port 2
H
L
CGD94xC / CGD98xHCi
PAD
RF switch
OUT
port 3
H
L
CGD94xC / CGD98xHCi
PAD
BGO807C
BGO807CE
OUT
port 4
H
L
bra822
BGD812
PAD
PAD
BGO807C
BGO807CE
EQ
BGY885A
H
L
OUT
port 1
H
L
OUT
port 2
BGD812
PAD
bra823
50
NXP Semiconductors RF Manual 16th edition
Connecting people, protecting your network
NXP CATV C-family for the Chinese SARFT standard
Push-pull amplifiers
BGY588C
Power gain (dB)
BGE788C
CGY888C
Typ
34.5
34.2
35.5
Slope cable equivalent (dB)
Range
0.2 - 1.7
0.3 - 2.3
1.5 typ.
Composite triple beat (dB)
Max
-57
-49
-68 typ.
Composite 2nd order distortion (dB)
Max
-62
-52
-66 typ.
Noise (@ f max) (dB)
Max
8
8
4 typ.
Total current consumption (mA)
Typ
325
305
280
Range
40 - 550
40 - 750
40 - 870
Frequency range (MHz)
Focus applications,
products & technologies
Parameters
Power doublers
Parameters
BGD712C
Power gain (dB)
CGD942C
CGD944C
CGD982HCi
CGD985HCi
CGD987HCi
Typ
18.5
23
25
23
24.5
27
Slope cable equivalent (dB)
Range
0.5 - 1.5
1-2
1-2
0.5 - 2
0.5 - 2
0.7 - 2
Composite triple beat (dB)
Max
-62
-66 typ.
-66 typ.
-66
-66
-66
Composite 2 order distortion (dB)
Max
-63
-66 typ.
-66 typ.
-69
-69
-66
Noise (@ f max) (dB)
Max
7
5
5
5.5
5.5
5.5
Total current consumption (mA)
Typ
395
450
450
440
440
440
Range
40 - 750
40 - 870
40 - 870
40 - 1003
40 - 1003
40 - 1003
BGO807C
BGO807CE
Min
800
800
Slope cable equivalent (dB)
Range
0-2
0-2
Composite triple beat (dB)
Max
-71
-69
Composite 2nd order distortion (dB)
Typ
-54
-53
Noise (@ f max) (dB)
Max
8.5
8.5
Total current consumption (mA)
Typ
190
190
Range
40 - 870
40 - 870
nd
Frequency range (MHz)
Optical receiver
Parameters
Responsivity (Rmin)
Frequency range (MHz)
Connector
- / SC0 / FC0
NXP Semiconductors RF Manual 16th edition
51
2.2.2
Highly efficient line-up of 1 GHz GaAs modules for sustainable CATV networks
NXP high gain power doublers CGD104xHi and push-pulls CGY104
Designed for 1 GHz “sustainable networks,” these high-performance GaAs devices enable extended
bandwidth and higher data rates. They deliver increased network capacity and make way for high-end
services like HDTV, VoIP, and digital simulcasting.
New CATV GaAs platform layout
Key features
` Excellent linearity, stability, and reliability
` High power gain for power doublers
` Extremely low noise
` Dark Green products
` GaAs HFET dies for high-end applications
` Rugged construction
` Superior levels of ESD protection
` Integrated ringwave protection
` Design optimized for digital channel loading
` Temperature compensated gain response
` Optimized heat management
` Excellent temperature resistance
Key benefits
` Simple upgrade to 1-GHz capable networks
` Low total cost of ownership
` High power-stress capability
` Highly automated assembly
Key applications
` Hybrid Fiber Coax (HFC) applications
` Line extenders
` Trunk amplifiers
` Fiber deep-optical-node (N+0/1/2)
` Bridgers
52
NXP Semiconductors RF Manual 16th edition
The NXP power doublers CGD104xH and CGD104xHi are ideal
for use in line extenders and trunk amplifiers. They support
fiber deep-optical-node applications (N+0/1/2), delivering
the highest output power on the market today. The GaAs HFET
die process delivers high gain, excellent CTB and CSO ratings,
and lower current.
The new NXP CGY104x push-pull family is the first line-up on
the market to combine very low noise, best-in-class distortion
parameters, and low, “carbon footprint” capabilities. It delivers
the best performance for the lowest power consumption,
so it reduces OPEX and CO2 emissions
All of NXP’s 1 GHz solutions are designed for durability and
offer superior ruggedness, an extended temperature range,
high-power overstress capabilities, and extremely high ESD
levels. As a result, they also reduce the cost of ownership.
The GaAs die is inserted in an HVQFN package that is then
mounted on thermal vias that manage heat transfer to the
heat sink. Temperature-control circuitry keeps the module's
high performance stable over a wide range of temperature.
Assembly is fully automated and requires almost no human
intervention, so repeatability remains very high.
Upcoming products
Additional push-pulls, currently under development, will
extend the capabilities of the power doublers even further,
supporting almost all modern HFC applications. The push-pull
CGY1041 will deliver a gain of 21 dB, the CGY1043 a gain of
23 dB, the CGY1049 a gain of 29 dB and the CGY1032 a gain of
32 dB. NXP is also developing a new, highly integrated power
doubler. The CGD1046Hi will deliver, in one IC, a 26 dB power
gain with 60 dBmV output power and excellent ESD protection,
for the ultimate in high-quality, distortionless devices.
CATV 1 GHz power doublers
CATV 1 GHz power doublers
CGD1040Hi
CGD1042H
CGD1042Hi
CGD1044H
CGD1044Hi
CGD1046Hi
Typ
21
23
23
25
25
27
Slope cable equivalent (dB)
Typ
1.5
1.5
1.5
1
1.5
0.5 - 2.0
Composite triple beat (dB)
Typ
-69
-69
-69
-69
-69
-73
Composite 2nd order distortion (dB)
Typ
-68
-68
-68
-68
-68
-68
Noise (@ fmax) (dB)
Max
6
6
6
6
6
5
Total current consumption (mA)
Typ
440
450
440
450
440
460
Frequency range (MHz)
Range
40 - 1003
40 - 1003
40 - 1003
40 - 1003
40 - 1003
40 - 1003
CGY1049
CGY1032
Focus applications,
products & technologies
Parameters
Power gain (dB)
CATV 1 GHz push-pulls
CATV 1 GHz push-pulls
Parameters
CGY1041
CGY1043
CGY1047
Power gain (dB)
Typ
22
24
28
30
33
Slope cable equivalent (dB)
Typ
2
2
2
1.6
1.8
Composite triple beat (dB)
Typ
-62
-62
-64
-62
-62
Composite 2nd order distortion (dB)
Typ
-64
-64
-66
-64
-64
Noise (@ fmax) (dB)
Max
5
5
4.5
5
5
Total current consumption (mA)
Typ
250
250
250
250
265
Frequency range (MHz)
Range
40 - 1003
40 - 1003
40 - 1003
40 - 1003
40 - 1003
CGD104xHi
PAD
H
L
OUT
port 1
H
L
OUT
port 2
H
L
OUT
port 3
H
L
OUT
port 4
CGD104xHi
PAD
PAD
(N + 1)
RF switch
EQ
CGD104xHi
PAD
CGD104xHi
PAD
bra822
An optical node with multiple out-ports using the CGD1040Hi / CGD1042Hi / CGD1044Hi / CGD1046Hi
NXP Semiconductors RF Manual 16th edition
53
2.3 TV and satellite
2.3.1
LNAs with programmable gain & bypass option for improved tuner performance
NXP LNAs BGU703x &BGU704x for TVs/STBs
Designed for high linearity and low noise, these 3.3 and 5 V wideband LNAs support multi-tuner applications
in TVs, DVR/PVRs, and STBs operating between 40 MHz and 1 GHZ. A unique programmable gain with
bypass mode compensates for tuner switch signal loss (important in multi-tuner systems), and improves
overall system performance by 7 to 10 dB.
Key features
 Internally biased
 Fixed Gp = 10 dB: BGU7031 (5 V), BGU7041 (3.3 V), and
Fixed Gp = 14 dB: BGU7044 (3.3 V)
 Programmable between Gp = 10 dB and
bypass: BGU7032 (5 V), BGU7042 (3.3 V), and programmable
between Gp = 14 dB and bypass: BGU7045 (3.3 V)
 Programmable between Gp = 10 dB, 5 dB and bypass:
BGU7033 (5 V)
 Flat gain between 40 MHz and 1 GHz
 Output power at 1 dB gain compression (PL(1 dB) ) ranging
from 9 to 14 dBm
 Noise figure as low as 2.8 dB
 High linearity with an OIP3 of 29 dBm
 75 Ω input and output impedance
 Power-down during bypass mode
 ESD protection >2 kV HBM, >1.5 kV CDM on all pins
NXP’s BGU703x and BGU704x low-noise amplifiers (LNAs)
upgrade overall picture quality with improved signal handling
(NF, dynamic range), while reducing the number of external
components.
Key trends
 Multiple tuners in TV, DVR/PVR, and set-top box
applications, requiring improved signal handling
 Use of 3.3 V Si tuner ICs, perfect match with our 3.3 V LNAs
(BGU704x)
All the devices can be used with discrete or Si can tuners, as
well as with on-board tuners. They deliver more robust ESD
performance compared to GaAs solutions, withstanding >2 kV
human body model (HBM) and >1.5 kV charged device model
(CDM).
Applications
 Terrestrial and cable set-top boxes (STBs)
 Silicon and can tuners
 Personal and digital video recorders (PVRs and DVRs)
 Home networking and in-house signal distribution
BGU703x evaluation board
54
NXP Semiconductors RF Manual 16th edition
Produced in NXP’s own QUBiC4+ Si BiCMOS process, they
improve signal handling by compensating for the signal loss at
the tuner switch. This can improve system performance by as
much as 7 to 10 dB.
The BGU7031, BGU7041, and BGU7044 are LNAs with fixed gain.
The BGU7032, BGU7042, and BGU7045 have an additional
bypass mode, and the BGU7033 adds two gain levels along
with the bypass mode. In bypass mode, the devices consume
less than 5 mA of current. Integrated biasing and 75 Ω
matching reduces footprint by eliminating as many as 15
components compared to discrete solutions.
Type
Package
Frequency
range
@
Gain (1)
NF
PL (1dB)
OIP3
FL (2)
RLout
RLin
(mA)
(dB)
(dB)
(dBm)
(dBm)
(dB)
(dB)
(dB)
5
43
10
4.5
14
29
-0.2
12
18
GP 10 dB
5
43
10
4.5
14
29
-0.2
12
18
Bypass
5
4
-2
2.5
-
29
-0.2
8
8
GP 10 dB
5
43
10
4.5
14
29
-0.2
12
18
GP 5 dB
5
43
5
6
9
29
-0.2
12
17
Bypass
5
4
-2
2.5
-
29
-0.2
8
8
GP 10 dB
3.3
38
10
4
12
29
-0.2
12
21
GP 10 dB
3.3
38
10
4
12
29
-0.2
12
21
Bypass
3.3
3
-2
2.5
-
29
-0.2
10
10
GP 14 dB
3.3
34
14
2.8
13
29
-0.2
12
20
GP 14 dB
3.3
34
14
2.8
13
29
-0.2
12
20
Bypass
3.3
3
-2
2.5
-
27
-0.2
10
9
Mode
VCC
ICC
(V)
GP 10 dB
(MHz)
BGU7031
SOT363
40 - 1000
BGU7032
SOT363
40 - 1000
BGU7033
SOT363
40 - 1000
BGU7041
SOT363
40 - 1000
BGU7042
SOT363
40 - 1000
BGU7044
SOT363
40 - 1000
BGU7045
SOT363
40 - 1000
Block diagram
Focus applications,
products & technologies
LNAs for set-top boxes (75 Ω)
Application diagram of an active splitter
with passive loop-through
BGU703x/BGU704x
VGA
RF input
surge
CONVENTIONAL
TUNER OR
SILICON TUNER
RF SW
BF1108 or BF1118
RF output
WB LNA
BGU7031/BGU7041/BGU7044(optional)
NXP Semiconductors RF Manual 16th edition
brb403
55
2.3.2
Complete satellite portfolio for all LNB architectures
NXP Satellite LNB devices TFF101xHN, BFU710F/730F, and BGA28xx
Designed for use in LNAs, mixers, and IF amplifiers, these robust, small-footprint products are the latest
additions to NXP's leading portfolio for satellite LNB architectures. They are manufactured in NXP’s
groundbreaking QUBiC4X SiGe:C and QUBiC4+ process technologies.
Fully integrated Ku-band downconverters TFF101xHN
The TFF101xHN is a family of fully integrated downconverters
for Ku-band LNBs. They give the best RF performance in terms
of phase noise, gain, and noise figure at the lowest current
consumption in the market.
Ku-band downconverter TFF101xHN/N1 for LNB
` Typical application: Universal single LNB & twin LNB
` Ultra-low current consumption: 52 mA over PVT
` Only 7 external components
` No inductors
` Single supply domain: 5 V
` Uses low-cost fundamental 25 MHz crystal
` High PL1dBo = 6 dBm / 3OIPo = 16 dBm
` Best-in-class PN < 1.4 deg RMS
- 10 kHz to 13 MHz integration bandwidth
` Multiple gain types available
- TFF1014HN/N1 36 dB
- TFF1015HN/N1 39 dB
- TFF1017HN/N1 42 dB
- TFF1018HN/N1 45 dB
` Flat gain over frequency (< 2 dBpp)
` Input & output matched 50 Ω
` Small leadless DHVQFN16 package (2.5 x 3.5 x 0.85 mm)
RF transistors BFU710F/730F
The BFU710F and BFU730F are wideband RF transistors that can
be used as an LNA or as a mixer for a DBS LNB in the Ku-band.
In either application, they deliver good noise and linearity, a
higher gain at a lower current consumption compared to their
GaAs pHEMT equivalents, and the cost advantage of silicon.
BFU710F as LNA in Ku-band LNB
` Typical application: LNA2 for single-output LNB
` Overall similar RF performance to GaAs pHemt LNAs
` Power consumption: 3.5 mA
` Single supply: 3/5/6 V
` High RF gain: 13.5 dB
` Low noise figure: 1.6 dB
` Linearity (OIP3): 12 dBm
56
NXP Semiconductors RF Manual 16th edition
BFU710F as mixer in Ku-band LNB
` Typical application: Active mixer for single-output LNB
` Single supply 3/5/6 V
` Low power consumption: 2.5 mA
` LO drive < 0 dBm
` SSB noise figure < 8 dB (including BPF at the input)
` SSB conversion gain > 5 dB (including BPF at the input)
` Linearity (OIP3) > 0 dBm
` LO-RF isolation min 20 dB
` RF match better than 10 dB
` IF match better than 8 dB
BFU730F as LNA in Ku-band LNB
` Typical application: LNA2 and LNA3 for multi-output LNB
` Overall similar RF performance to GaAs pHemt LNAs
` Power consumption: 11 mA
` Single supply 3/5/6 V
` Very high RF gain: 11.5 dB
` Low noise figure: 1.25 dB
` Linearity (OIP3) > 17 dBm
` Return loss > 10 dB
MMICs BGA28xx as IF amplifiers (first stage & output
stage)
For compatibility with existing designs, the series uses market
standard packages: the SOT363 and the pin-compliant
SOT363F. The pinning is identical to NXP’s current gain
block family, and the blocks deliver similar noise figures. New
features include flatter gain, a positive gain slope, improved
P1dB vs Icc, and no necessity for an output inductor.
` Internally matched at 50 Ω
` Gain slope > 0.5 dB
Single supply voltage: 3.3 or 5 V
Reverse isolation: > 30 dB up to 2 GHz
Best-in-class power vs current consumption
Noise figure: 4 to 6 dB at 1 GHz
Unconditionally stable (K > 1)
High-compression-point models work without output inductor
6-pin SOT363 plastic SMD package
These products – the integrated downconverters TFF101xHN,
the wideband transistors BFU710F/730F for LNA and mixer
functionality, and the BGA28xx series of IF MMICs – are
the most recent additions to NXP’s leading portfolio for
satellite LNB. They join the other discrete products, including
oscillators, amplifiers, and switches, to provide complete
coverage for all LNB architectures.
Since the ICs, transistors, and the MMICs are manufactured
in NXP’s industry-leading QUBiC4X SiGe:C and QUBiC4+
process, they offer better overall RF performance and are more
robust than their GaAs equivalents and offer the added cost
advantage of silicon. The process technology also enables
higher integration, for added features. NXP owns the industrial
base for production (wafer fab, test, assembly), so volume
supplies can be assured.
Satellite outdoor unit, twin low noise block (LNB) with
integrated mixer/ oscillator/ downconverter
LNA2
H
LNA3
COMBINER
LNA1
SPLITTER
LNA3
BPF
LNA2
LNA3
COMBINER
SPLITTER
LNA1
IF out 1
shared
crystal
LNA3
V
TFF1014
SWITCHED TO
LOW-BAND
BPF
TFF1014
IF out 2
SWITCHED TO
HIGH-BAND
22 kHz
TONE
DETECT
3
H/V
DETECT
aaa-002896
Note: Also see section 1.3.4 Satellite outdoor unit, twin low noise block (LNB) with integrated
mixer/ oscillator/ downconverter
Fully integrated mixer / oscillator / downconverter
LB/HB/H/V detection
pHemt bias
LO oscillator control
linear regulated 5 V
BIAS
V/T
LIN
HB
Hor
2nd
10.7 ~ 12.75 GHz
BPF
1st
Ver
0.95 ~ 1.9 GHz/
1.1 ~ 2.15 GHz
mixer
IF amps
BFU710F
25.000 MHz
PLL/VCO
TFF101xHN
LOOP
FILTER
001aan954
NXP Semiconductors RF Manual 16th edition
57
Focus applications,
products & technologies
`
`
`
`
`
`
`
2.3.3
VSAT, 2-way communication via satellite
Design a Ku-/ Ka-band VSAT transceiver that meets IESS-308
with NXP's Ku-/ Ka-band RF LO generators
The TFF100xHN family are Ku-band RF PLLs, with integrated VCO intended for low phase-noise localoscillator (LO) circuits in Ku- & Ka-band VSAT transmitters and transceivers. Manufactured in a highperformance SiGe:C process, these devices deliver extremely low phase noise and comply with the IESS-308
from Intelsat.
VSAT networks are commonly used to transmit narrowband
data, such as point-of-sale transactions for credit cards, or to
transmit broadband data that supports satellite Internet access
to a remote location, VoIP, or video.
The network typically consists of a dish antenna, an outdoor
unit, and an indoor unit. The outdoor unit is used for
frequency translation between RF and IF, and usually includes
a microwave-based uplink/downlink separator, a low noise
block (LNB) for receiving the downlink signals, and a block
Upconverter (BUC).
The VSAT ICs can be used to create the LO generator for a
linear BUC (meaning the IF or RF conversion is done by mixing
with an LO).
Features
` Phase noise compliant with IESS-308 (Intelsat)
` Differential input and output
` Divider settings at 16, 32, 64, 128, or 256
` Lock-detect output
` SiGe:C technology (120 GHz fT process)
` HVQFN24 (SOT616-1) package
Applications
` VSAT block upconverters
` VSAT down conversion
` Local oscillator signal generation
To enable precise frequency and time multiplexing, the
downlink signal provides an accurate frequency reference of
10 MHz. The indoor unit frequency multiplexes this with the
uplink IF signal, and the LO signal in the BUC needs to be
frequency-locked to the reference.
The TFF100xHN ICs are housed in a 24-pin HVQFN (SOT616-1)
package. The pins have been assigned for optimal performance.
Three voltage domains are used to separate the block on the
IC, and two pins for each output (OUT-P and OUT-N) have been
reserved to match a typical layout using a linewidth of Z = 50 Ω
microstrip on a 20-mil RO4003 board (1.1 mm).
The ground pins have been placed next to the reference input
and the output, and, to minimize crossings in the application,
all the supply pins are on the same side of the IC.
58
NXP Semiconductors RF Manual 16th edition
Satellite
HUB
Focus applications,
products & technologies
VSATs
Typical VSAT network
Complete LO generator for linear BUC with TFF1003HN
Type
fIN(REF)
Package
VCC
ICC
PLL
PLL phase noise
@ N=64 @ 100 kHz
Typ
Output buffer
fo(RF)
Max
Input
Po
RLout(RF)
Si
Typ
Max
Min
(MHz)
(V)
(mA)
(dBc/Hz)
(GHz)
(dBm)
(dB)
(dBm)
TFF1003HN
SOT616
50 - 815
3.3
100
-92
12.8 - 13.05
-5
-10
-10
TFF1007HN
SOT616
228.78 - 234.38
3.3
130
-104
14.62 - 15
-3
-10
-10
Icc (mA)
Single supply
(V)
RF gain (dB)
NF (dB)
OIP3 (dBm)
Ku-band LNA2 for single
output LNB
3.5
3/5/6
13.5
1.6
12
BFU730F
Ku-band LNA2 and LNA3
for multiple output LNB
11
3/5/6
11.5
1.25
17
Type
Application
Icc (mA)
Single supply
(V)
LO drive
SSB NF (dB)
SSB conversion LO-RF isolation
gain (dB)
(dB)
BFU710F
Ku-band active mixer for
single output LNB
2.5
3/5/6
< 0 dBm
< 8 dB
Type
Application
BFU710F
> 5 dB
min 20
NXP Semiconductors RF Manual 16th edition
59
2.3.4
Low noise LO generators for microwave & mmWave radios
NXP LO generators (integrated VCO/PLL) TFF11xxxHN
Manufactured in NXP’s breakthrough QUBiC4X SiGe:C process technology, these highly integrated,
alignment-free LO generators are low-power and low-spurious solutions that simplify design-in and lower
the total cost of ownership.
These low noise local-oscillator (LO) generators, optimized
for use in many different microwave applications between
7 and 15 GHz, deliver highly accurate performance in a small
footprint. They require no alignment or frequency modification
on the production line, so they simplify manufacturing. High
integration saves board space and makes design-in easier, for
lower overall cost and faster development.
Features
` TFF11xxxHN family: lowest-noise LO generators for
a full family in 7 to 15 GHz range
` Maximum power consumption for all types is 330 mW (typ)
` Phase-noise compliant with IESS-308 (Intelsat)
` Proven QUBiC4X SiGe:C technology (120 GHz fT process)
` External loop filter
` Differential input and output
` Lock-detect output
` Internally stabilized voltage reference for loop filter
` 24-pin HVQFN (SOT616-1) package
Applications : TFF11xxxHN family
` Industrial/medical test and measurement equipment
` Electronic warfare (EW)
` Electronic countermeasures (ECM)
` Point-to-point
` Point-to-multipoint
` Satellite communication/VSAT
` Radar systems
60
NXP Semiconductors RF Manual 16th edition
Since these ICs are manufactured in NXP’s industry-leading
QUBiC4X SiGe:C process, they offer better overall RF
performance, are more robust than their GaAs equivalents,
and consume much less power. The process technology also
enables higher integration, for added features. NXP owns the
industrial base for production (wafer fab, test, assembly),
so volume supplies can be assured.
The TFF1003HN is the basis for the entire family of LO
generators. It has VCO coverage of 12.8 to 13.05 GHz and
accepts input signals from 50 to 816 MHz. The divider can be set
for 16, 32, 64, 128, or 256, and the output level is -5 dBm with a
stability of ±2 dB. The family of LO generators is completed by
a range of 18 different devices operating in a center frequency
ranging from 7 to 15 GHz. The RF performance of all these
devices is consistent with the TFF1003HN.
All the LO generators have low power dissipation (330 mW typ),
and all are available in a space-saving 24-pin HVQFN package.
Full portfolio overview of low noise LO generators for
general microwave applications in section 3.4.4
2.4 Portable devices
2.4.1
The best reception of GNSS signals with the smallest footprint
NXP SiGe:C GPS LNAs BGU700x/BGU8007
NXP's GPS low-noise amplifiers offer the best reception of weak signals because of dynamic suppression
of strong cellular and WLAN transmit signals. Moreover, as only two external components are required,
Key features
 Low noise figure: 0.75 dB
 System-optimized gain of 16.5 or 19 dB
 Adaptive biasing dynamically suppresses strong cellular and
WLAN transmit signals, resulting in improved linearity of
10 dB better IP3 under -40 to -20 dBm jamming conditions
and effective GPS output with jammer powers up to -15 dBm
 AEC-Q100 qualified (BGU7004, BGU7008) for highest
reliability in harsh conditions
 Only two external components required
 Small 6-pin leadless package: 1.45 x 1.0 x 0.5 mm
Key benefits
 Maintains optimal GPS signal reception for as long as possible
 Significant PCB size savings (50%)
 Lower component cost (10%)
Applications
 Smart phones, feature phones
 Tablets
 Personal Navigation Devices (PNDs)
 Digital Still Camera (DSCs)
 Digital Video Camera (DVCs)
 RF front-end modules (used in phones)
 Complete GPS chipset modules (used in DSCs)
 Automotive applications (BGU7004/8): toll collection,
emergency call
Focus applications,
products & technologies
designers can save up to 50% in PCB size and 10% in component cost.
These SiGe:C low-noise amplifiers (LNAs) improve the
reception of GPS signals, including GloNass and Galileo.
Available in extremely small 6-pin packages, they reduce
footprint, lower cost, and enhance reception in systems that
use an active or patch antenna.
GPS has become a standard feature in a very wide range of
consumer products, from personal navigation devices to digital
video cameras, watches, electric cars, and more. GPS signal
power levels are weak and below the noise floor at -155 dBm.
In many of these products, especially smart phones, strong
transmitters such as WLAN and cellular can drive the GPS LNA
into compression. When the GPS LNA is in compression, it has
lower gain, and that can worsen GPS reception. Also, when the
LNA is in compression, it generates intermodulation products
and harmonics from the transmitter signals, which can
overpower the weak GPS signals and lead to no GPS reception.
The NXP BGU700x/BGU8007 series use adaptive biasing
to immediately detect any output power from jammers, and
compensate by temporarily increasing the current. As a result,
optimal GPS signal reception is maintained for as long as possible.
Each device in the BGU700x/BGU8007 series requires only one
input matching inductor and one supply decoupling capacitor
to complete the design. This creates a very compact design
and lowers the bill of materials. Designers can save up to 50%
in PCB size and 10% in component cost. For example,
the BGU7005 is in a 1.45 x 1 mm package with application
area at only 4.53 mm2. This is 50% smaller than a comparable
solution with a 9.06 mm2 application area.
NXP Semiconductors RF Manual 16th edition
61
Application diagram
external
active
antenna
LNA
BPF
SPDT
embedded
antenna
LNA
BPF
BPF
GPS
RECEIVER
IC
001aan955
Smallest footprint
Type
MMIC *
Package size
Package
X
Y
Pins
Pitch Area
SMD's
Appl.
SMD size
X
Y
SMD's
area
Appl. area
mm2
mm
mm
mm
#
mm
mm2
#
mm
mm
mm2
1.45 x 1
1.7
1.25
6
0.5
2.13
2
1.5
0.8
2.4
4.53
Wafer-level package
1.26 x 0.86
1.5
1.1
6
0.4
1.65
6
1.5
0.8
7.2
8.85
Competitor
Wafer-level package
0.86 x 0.86
1.1
1.1
4
0.4
1.21
4
1.5
0.8
4.8
6.01
Competitor
Thin small leadless package
2 x 1.3
2.25
1.55
6
0.5
3.49
4
1.5
0.8
4.8
8.29
Competitor
Thin small leadless package
1.4 x 1.26
1.65
1.5
6
0.48
2.48
4
1.5
0.8
4.8
7.28
Competitor
Thin small outline non-leaded
1.5 x 1.5
1.75
1.75
6
0.5
3.06
5
1.5
0.8
6
9.06
BGU7005/7
SOT886
Competitor
* Includes keep-out area on PCB (a commonly used assembly rule)
SiGe:C GPS LNAs
Supply
voltage
Supply current
Insertion power gain
Noise
figure
Input power at 1 dB gain
compression
Input third-order intercept point
f1 = 1713 MHz, f2 = 1851 MHz
Vcc
Icc
|s21|2
NF
PL(1dB)
IP3i
(V)
(mA)
(dB)
(dB)
(dBm)
(dBm)
Vcc = 1.8 V, Typ
Vcc = 2.2 V, Min
Vcc = 2.2 V, Typ
Vcc = 2.5 V, Icc = 5 mA
-
-
9
-
-
-
5
12
-
-14 -11
-
-
-
-11
-8
-
-
5
9
-
-
-
5
12
-
-15 -12
-
-
-
-14 -11
-
-
1
4
-
-
-
2
5
-
-15 -12
-
-
-
-14 -11
-
-
1
4
-
-
-
2
5
1
4
-
-
2
5
-
-
-
18.3
20
0.8
-
-
BGU7004^
SOT886
1.5
2.85
-
4.5
-
-
16.5*
-
0.9
-
-
BGU7005
SOT886
1.5
2.85
-
4.5
-
-
16.5*
-
0.9
-
BGU7007
SOT886
1.5
2.85
-
4.8
-
-
18.5**
-
0.9
-
BGU7008^
SOT886
1.5
2.85
-
4.8
-
-
18.5**
-
0.9
-
BGU8007
SOT886
1.5
2.2
-
4.6
-
-
19.0***
-
0.75#
* 16.5 dB without jammer / 17.5 dB with jammer
** 18.5 dB without jammer / 19.5 dB with jammer
*** 19.0 dB without jammer / 20.5 dB with jammer
62
NXP Semiconductors RF Manual 16th edition
Typ
Max
Typ
-15 -12
-
-
-
-
-20
-
-
^ AEC-Q101 qualified (some limitations apply)
#
Evaluation board losses excluded
-13 -10
-
-
-
Vcc = 2.85 V, Typ
Vcc = 1.5 V, Typ
0
5
16
Vcc = 2.85 V, Min
Vcc = 1.5 V, Min
-
-
15
Vcc = 1.8 V, Min
Vcc = 2.85 V, Typ
-
-
-
Vcc = 2.5 V, Icc = 5 mA
-
-8
3
Vcc = 2.85 V, Min
-
-11
2.85
Max
Vcc = 2.2 V, Typ
-
-
Min
2.2
Min
Vcc = 2.2 V, Min
-
-
Max
SOT891
Vcc = 1.8 V, Typ
-
-
Typ
Vcc = 1.5 V, Typ
-
-14 -11
Min
BGU7003
Vcc = 1.8 V, Min
Package
Vcc = 1.5 V, Min
Type
@ 1.575 GHz
2.5 Industrial, scientific & medical
2.5.1
Medical applications driven by RF power: From imaging to cancer treatment,
a flexible and versatile technology in the doctor’s toolbox
RF technology is making its way into all kinds of medical applications, ranging from the
well-known imaging techniques (MRI, EPRI) over low frequency, external heat treatment,
and electro-surgical tools, to minimally invasive endoscopic cancer treatment (RF ablation).
One clear trend is the increasing share of RF-based technologies for ablation. Another is the
achieve higher spatial resolution, better control, and shorter treatment times.
RF radiation is not a new technology in medicine. It is currently
used for imaging purposes in MRI (magnetic resonance imaging)
and EPRI (electron paramagnetic resonance imaging), techniques
that employ frequencies from a few megahertz to about 500 MHz.
Other well-known external heat-treatments to rejuvenate skin or
relieve muscle pain make use of frequencies around 480 kHz – not
too demanding in terms of RF. Surgical equipment to cut and
simultaneously coagulate blood vessels runs off RF at about 5 MHz.
The latter application belongs to a class of treatment techniques
that is growing rapidly and uses RF radiation to deposit energy
locally at various parts of the body – in general to “ablate”
(remove) unwanted tissue. Inside the body, the RF energy heats
the surrounding tissue until it is desiccated and/or necrotized. The
damaged tissue will later be re-absorbed by the surrounding, living
tissue. Further application examples for RF ablation include cancer
treatment in the lung, kidney, breast, bone and liver, removal of
varicose veins, treatment of heart arrhythmia, and a growing list of
other applications that benefit from the high control and feedback
possible with RF.
Another advantage of RF in this context is the fact that it can be
applied via small catheters ending in antennas that deploy the RF
signal. Unlike older, direct-current techniques, the tissue is heated
only very locally around the antenna. Neighboring nerves (and the
heart) are not stimulated. This led to the development of a variety
of specialized catheters, used during minimally invasive surgery,
along with ultrasound or X-ray imaging to determine the exact
location of the RF-active part. During the treatment, the impedance
of the surrounding tissue can be monitored and the end-point
determined. With proper catheters, one can even achieve “self
limitation” due to the reduced uptake of RF energy in desiccated
tissue. Likewise, the RF frequency can be used to tune the energy
deposition zone around the catheter: the higher the frequency, the
smaller the penetration depth – and hence the volume to deposit
the RF energy – in the watery tissue.
With the trend towards higher RF frequencies and powers, the
complexity of RF generators and the requirements for the device
technology also increase. Above 10 MHz, say, up to 3.8 GHz, the
technology of choice for power amplifiers is Si LDMOS (laterally
diffused metal oxide semiconductor). This technology has proven
to be powerful, efficient, and rugged in base stations, radar
systems, broadcast transmitters, and other industrial, scientific,
and medical (ISM) applications. LDMOS is available from up to
50 V supply to achieve power levels up to 1,200 W per single
device, with outstanding ruggedness and high gain and efficiency.
To drive and control the LDMOS power amplifier stages, it
takes voltage-controlled oscillators, phase locked loops, and
medium power amplifiers. These parts of the RF signal chain are
conveniently available based on reliable and high-volume SiGe:C
(QUBiC) semiconductor technologies. Going a step further, one
can even use high-speed converters to drive the signal chain
entirely from the digital domain, for full and easy control over the
shape and modulation of the applied RF.
RF implications
These in-situ medical applications and, in general, most of the ISM
applications, usually form highly mismatched RF loads during some
part of the usage cycle. This in turn means that, without protection
or other measures, all of the "injected" RF power reflects back into
the final stage of the amplifier and needs to be dissipated in the
transistor(s), and most likely destroys the device(s) if this situation
lasts too long. LDMOS transistors are designed to be extremely
rugged and generally withstand these mismatch situations without
degrading over time.
This device ruggedness, or the ability to withstand “harsh” RF
conditions in general, be it mismatch or extremely short pulse rise
and fall times, is essential for reliable device performance. RF power
companies have gone to great lengths to achieve best-in-class
device ruggedness. The technologies have been hardened under
the most stringent ruggedness tests during development, which is
particularly true for the 50 V technology. Among other factors, the
base resistance of the parasitic bipolar and the drain extension of
the LDMOS device play key roles in this respect.
This ruggedness, combined with the power density and the high
efficiencies achievable, make LDMOS the preferred technology for
RF power amplifiers up to 3.8 GHz.
NXP Semiconductors RF Manual 16th edition
63
Focus applications,
products & technologies
trend towards higher RF frequencies (several GHz) and higher powers (> 100 W) in order to
2.5.2
RF-driven plasma lighting:
The next revolution in light sources are powered by solid-state RF technology
Recent developments in RF power technology, such as improved cost structure, ruggedness, and power levels
of up to 1200 W per device, have enabled a breakthrough light source technology, called ‘RF plasma lighting’.
All RF plasma lighting sources make use of a small, electrode-less quartz lightbulb that contains argon gas
and metal halide mixtures. The bulb is powered by direct RF radiation, which ignites the gas mixtures to
create and power a bright plasma, the color of which can be tuned by the composition of its constituents.
This technology works without any additional electrodes in
the bulb, unlike standard high-intensity discharge lamps.
No electrodes means very long operating lifetimes, since
the contamination and wire erosion that lead to decreased
efficiency and eventual lamp failure are precluded. The RF
light source lives up to 50,000 hrs when it reaches 50% of its
original light output. Typical high-intensity discharge lamps, by
comparison, achieve 20,000 hrs operating life. Another strong
point of the plasma light is its efficiency: 1 W of RF power is
converted to 130-140 lm of light. This leads to very compact,
very bright lamps that easily emit 10,000 to 20,000 lm of white
light with a close-to-sunlight color rendition.
The key enabler for the RF light source is RF technology,
based on Si LDMOS RF power transistors. LDMOS technology
operating at 28 V is the leading RF power technology for cellular
base stations or broadcast transmitters as final amplifier stages
in the frequency range between a few MHz up to 3.8 GHz.
Recently, another LDMOS format, 50 V LDMOS, has emerged
for use in broadcast, ISM, defense and avionics applications.
It combines high power density to achieve power levels up to
1,200 W per single device and outstanding ruggedness, with
high gain and efficiency at frequencies of up to 1.5 GHz.
Comparison of lighting technologies
The table below summarizes currently available technologies that
generate bright light with varying degrees of efficiency. It lists a
few key parameters, including lifetime, luminous flux, efficacy, color
rendition index, color temperature, start-up time, and re-strike time
(time to start after switch-off from normal operation).
Color
Start-up Re-strike
Lifetime Luminous Efficacy
Color
flux
temperature
time
time
(lm/W) rendering
(hrs)
(klm)
(K)
(s)
(s)
Incandescent 2,000
1,700
10 to 17
100
3200
0.1
0.1
Fluorescent
10,500
3,000
115
51 to 76 2940 to 6430
0.3
0.1
LED
25,000
130
60 to 100
30
6000
0.1
0.1
Type
HID (highintensity
discharge)
20,000
25,000
65 to 115
40 to 94
4000 to 5400
60
480
RF plasma
50,000
25,000
100 to140
70 to 94
4000 to 5500
30
25
Table 1: Comparison of light generation. Note: numbers are only valid for a
qualitative comparison. Source: www.wikipedia.org and references therein.
64
NXP Semiconductors RF Manual 16th edition
The plasma light source is among the brightest and most
efficient available to date and boasts a very long life time.
Important to note is the high brightness per bulb: much
brighter than LEDs, for example. Consequently, it takes
multiple LEDs to generate the light output of a single plasma
light source. Hence, LED luminaries for street lighting will be
considerably larger than those for plasma light sources.
RF implications
The RF plasma lighting sources can operate at a wide range of RF
frequencies, but initial applications typically focus at frequencies
of around a few hundred megahertz. At these frequencies both
the 28 and 50 V LDMOS technologies can be used, yielding
high efficiency values of 70% to more than 80% and low-heat
dissipation making compact plasma lamp designs possible.
The RF-driven plasma light is a perfect example of novel
applications that can be powered by RF energy in the
industrial, scientific, and medical (ISM) realm. Established
technologies use RF to pump a gas discharge in a laser cavity.
These "gas discharge" applications and, in general, most of
the ISM applications, typically form highly mismatched RF
loads during some part of the usage cycle. In the case of
gas discharges, for example, the gas cavity acts as an "open
circuit" during switch-on. This in turn means that without
protection or other measures, all of the "injected" RF power
reflected back into the final stage of the amplifier needs to
be dissipated in the transistor(s) right there and most likely
destroys the device(s) if this situation lasts too long. After the
discharge strikes, the load impedance reverts to "matched,"
eventually, and the transistor sees an acceptable load.
Obviously, these mismatched conditions occur every time the
plasma is "switched on,” exerting strain on the finals. LDMOS
transistors are designed to be extremely rugged and generally
withstand these mismatch situations without degrading over
time.
This ruggedness, combined with the high power density and
efficiency achievable, make LDMOS the preferred technology
for RF lighting and other equally demanding applications in the
ISM realm.
2.5.3
QUBiC4 Si and SiGe:C transistors for any RF function
NXP wideband transistors BFU6x0F & BFU7x0F
Key features
 40/110 GHz transition frequency allows for applications
up to 18 GHz and beyond
 High gain of 13.5 dB at 12 GHz with a low noise figure of 1.45 dB
 High linearity of 34 dBm (OIP3) at 1.8 GHz
 Consuming only 3 mA to generate 13.5 dB gain at 12 GHz
 Plastic surface-mount SOT343F package for high
performance and easy manufacturing
can be used as low-noise amplifiers, while the BFUx60F
and BFUx90F can be used as high-linearity and high-output
amplifiers. Other options include using these transistors as
buffer amplifiers, mixers, and oscillators.
Higher transition frequencies (40 to 110 GHz) enable higher
application frequencies (24/77 GHz car radar, 18 GHz Ka band,
3.5-3.7 WiMas, etc.), and the devices meet the low current
requirements of wideband applications.
Applications
 Wideband applications that require
- Low-noise amplifiers
- High linearity and high output amplifiers
- Buffer amplifiers
- Mixers
- Oscillators
As a result, these devices are ideal for use in a very wide
range of applications: second and third LNA stage and
mixer stage in DBS LNBs, Ka/Ku band DROs, satellite radio
(SDARS) LNA, C-band/X-band high-output buffer amplifiers,
AMR, WLAN/WiFi, ZigBee, Bluetooth, FM radio, GPS, cellular
(LTE, UMTS), mobile TV, RKE, high-linearity applications, low
current battery-equipped applications, low-noise amplifiers for
microwave communications systems, medium output power
applications, microwave driver/buffer applications, and more.
The devices in this family of sixth- (Si) and seventh- (SiGe:C)
generation RF transistors can be used to perform nearly any RF
function. For example, the BFUx10F, BFUx30F, BFU725/N1
Selection guide – function
Function
LNAs, mixers, frequency multipliers, buffers
Frequency
range
Band
Type
High-linearity, high-output amplifiers & drivers
Oscillators
<6 GHz
6 GHz – 12 GHz
12 GHz –
+18 GHz
<6 GHz
6 GHz – 12 GHz
12 GHz – 18 GHz
<6 GHz
6 GHz – 12 GHz
12 GHz –
+18 GHz
L,S,C
X, Ku low
Ku high, Ka
L,S,C
X, Ku low
Ku high
L,S,C
X, Ku low
Ku high, Ka
•
•
•
•
•
•
•
•
•
•
•
BFU610F
BFU630F
BFU660F
BFU690F
BFU725F/N1
BFU710F
BFU730F
BFU760F
BFU790F
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
Red = application note available on NXP.com
Typenumber
Package
Package
name
generation
fT [typ] (GHz)
VCEO [max] (V)
IC [max] (mA)
Ptot [max]
(mW)
Polarity
NF (dB)
@ f (GHz)
@ IC (mA)
@ VCE (V)
NF (dB)
@ f (GHz)
@ IC (mA)
@ VCE (V)
PL(1dB) [typ]
(dBm)
@ f (GHz)
@ IC (mA)
@ VCE (V)
IP3 [typ]
(dBm)
@ f (GHz)
@ IC (mA)
@ VCE (V)
Selection guide – specification
BFU610F
BFU630F
BFU660F
BFU690F
BFU710F
BFU725F/N1
BFU730F
BFU760F
BFU790F
SOT343F
SOT343F
SOT343F
SOT343F
SOT343F
SOT343F
SOT343F
SOT343F
SOT343F
DFP4
DFP4
DFP4
DFP4
DFP4
DFP4
DFP4
DFP4
DFP4
6th
6th
6th
6th
7th
7th
7th
7th
7th
15
21
21
18
43
55
55
45
25
5.5
5.5
5.5
5.5
2.8
2.8
2.8
2.8
2.8
10
30
60
100
10
40
30
70
100
136
200
225
230
136
136
197
220
234
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
1.1
0.85
0.6
0.6
0.85
0.7
0.8
0.4
0.4
2.4
2.4
1.5
1.5
5.8
5.8
5.8
1.5
1.5
2
3
6
15
2
5
5
12
20
2
2
2
2
2
2
2
2
2
1.7
1.3
1.2
0.7
1.45
1.1
1.3
0.5
0.5
5.8
5.8
5.8
2.4
12
12
12
2.4
2.4
2
3
6
15
2
5
5
12
20
2
2
2
2
2
2
2
2
2
3
12.5
18.5
20
4.5
8
12.5
18.5
19
5.8
5.8
5.8
2.4
5.8
5.8
5.8
5.8
2.4
10
30
60
70
5
25
15
30
60
1.5
2.5
4
4
2.5
2
2.5
2.5
2.5
18
27.5
28
33
19.5
19
29
33
34
5.8
5.8
5.8
2.4
5.8
5.8
5.8
5.8
2.4
10
30
40
70
10
25
20
30
30
1.5
2.5
4
4
1.5
2
2.5
2.5
2.5
NXP Semiconductors RF Manual 16th edition
65
Focus applications,
products & technologies
These next-generation devices offer the best RF noise figure versus gain performance, drawing the
lowest current. This performance allows for better signal reception at low power and enables RF
receivers to operate more robustly in noisy environments.
2.5.4
Building on decades of innovation in microwave and radar
NXP builds on more than 50 years of history in semiconductor technology and component design. For more
than three decades we have led in providing high-performance RF technologies for microwave applications.
The company has built a strong position in the field of RF small-signal and power transistors for microwave
amplifiers with best-in-class Si devices and processing technologies.
We were the first semiconductor company to supply S-band
transistors (2700 to 3500 MHz) based on laterally diffused
metal-oxide-silicon (LDMOS). To further strengthen our
position towards the future, we are currently developing
new high-power and high-bandwidth technologies based on
gallium nitride (GaN) material.
Another enabling technology is NXP’s BICMOS process
QUBiC, which is available in several variants with fT up to
200 GHz, each specialized to address specific small-signal
RF applications.
The product portfolio encompasses:
- Low-noise amplifiers (LNAs)
- Variable-gain amplifiers (VGAs)
- Mixers
- Local oscillators (LOs)
- LO generators
NXP now also focuses on architectural breakthroughs and
has developed highly integrated products for microwave and
millimeter wave. One example is a family of LO generators
from 7 to 15 GHz with integrated PLL and VCO. Another
example is an integrated RF power module in S-band
(3.1-3.5 GHz) at 200 W.
RF small-signal product highlight
Manufactured in NXP’s breakthrough QUBiC4X SiGe:C process
technology, these highly integrated, alignment-free LO
generators TFF1xxxHN are low-power, low-spurious solutions
that simplify design-in and lower the total cost of ownership.
66
NXP Semiconductors RF Manual 16th edition
Features
` Lowest noise LO generators for 7 to 15 GHz range
` Maximum power consumption for all types, typical 330 mW
` Phase-noise compliant with IESS-308 (Intelsat)
` Proven QUBiC4X SiGe:C technology (120 GHz fT process)
` External loop filter
` Differential input and output
` Lock-detect output
` Internally stabilized voltage reference for loop filter
RF power product highlight
The BLS6G2933P-200 is the first LDMOS-based, industrystandard pallet produced by NXP. This pallet offers more than
40% efficiency and includes the complete bias network for
S-band applications.
Microwave applications and bands of operation
System
Frequency
VHF and UHF
<1 GHz
L-band
1200 - 1400 MHz
S-band
2700 - 3500 MHz
X-band
8000 - 12000 MHz
Commercial avionics
DME (Distance Measuring Equipment)
978 - 1215 MHz
Transponders
Mode A / Mode S / Mode C / TCAS
1030 - 1090 MHz
Military avionics
IFF transponders (Identification, Friend or Foe)
1030 - 1090 MHz
TACAN (Tactical Air Navigation)
960 - 1215 MHz
JTIDS / MIDS
(Joint Tactical Information Distribution System)
960 - 1215 MHz
Marine radar
Focus applications,
products & technologies
Features
` Reduces component count and considerably simplifies radar
system design
` P1 dB output power 200 W
` Efficiency > 40%
` Industry-standard footprint
` 50 Ω in/out matched for entire bandwidth
` Lightweight heat sink included
` The advantages of LDMOS over Bipolar
- Higher gain and better efficiency
- Better ruggedness – overdrive without risk to 5 dB
- Improved pulse droop and insertion phase
- Consistent performance – no tuning required
- Improved thermal characteristics – no thermal runaway
- Non-toxic packaging and RoHS-compliance
9300 - 9500 MHz
For a complete list of products, see the respective smallsignal and power microwave pages in chapter 3
NXP Semiconductors RF Manual 16th edition
67
2.5.5
Digital broadcasting at its best
The BLF881 / BLF888A transistor line-up enables today’s most powerful and
efficient digital broadcast transmitter applications
BLF881
This transistor is based on NXP’s 50 V LDMOS technology and
features 120 W RF output power for broadcast transmitter and
industrial applications. An unmatched device, the BLF881 can be
used in the HF to 1 GHz range. The excellent ruggedness and
broadband performance of this device make it ideal for digital
transmitter applications – either on its own or as a driver in
combination with the high-power transistor BLF888A.
The BLF881 is also available in an earless version, the BLF881S,
which enables an even more compact PCB design.
BLF888A
Running from a 50 V supply voltage, the BLF888A is a
600 W LDMOS RF power transistor for broadcast transmitter
and industrial applications. Being a matched device, the
BLF888A is optimized for digital signal broadcasting and
can deliver 120 W average DVB-T output power over the full
UHF band from 470 MHz to 860 MHz with 20 dB power gain
and 31% drain efficiency. The excellent ruggedness of this
transistor (it withstands a VSWR in excess of 40:1) makes it the
ultimate choice as final stage for digital transmitter applications
– ideally accompanied by a BLF881 as the driver. This device
is also available in an earless package, denoted BLF888AS, to
enable surface-mount assembly processes and take optimum
advantage of the very low thermal resistance of the package.
Key features and benefits
` Excellent efficiency and reliability
` Highest power levels in the market
` Best-in-class ruggedness designed into all devices
` Best broadband performance
` Easy power control
` Best-in-class design support
` Low thermal resistance design for unrivalled reliability
` Advanced flange material for optimum thermal behavior
and reliability
` Designed for broadband operation (470 to 860 MHz)
Key applications
` Analog and digital TV transmitters
typ. 0.5 kW
DVB-T
Driver stages
8× final
TV exciter
DVB-T
harmonic
filter power
monitor
typ. 5 kW DVB-T
output power
amplifiers
Type
Product
BLF642
BLF884P(S)
BLF879P
BLF888A(S)
BLF888B(S)
BLF881(S)
Driver
68
Final
brb339
fmin (MHz)
fmax (MHz)
P1dB (W)
Matching
VDS (V)
PL (W)
η D (%)
Gp (dB)
Test signal
Package
1
470
470
470
470
1
1400
860
860
860
860
1000
35
300
500
600
600
140
I
I
I
I
-
32
50
42
50
50
50
35
150
200
250
250
140
63
46
47
46
46
49
19
21
21
21
21
21
CW
CW
CW
CW
CW
CW
SOT467C
SOT1121
SOT539A
SOT539
SOT539
SOT467
NXP Semiconductors RF Manual 16th edition
2.5.6
Setting the benchmark for ultra low-power and high-performance wireless connectivity solutions
NXPs JN5148/2 wireless microcontroller platform with chipsets, modules, and supporting software
NXP provides a complete package for the development of IEEE802.15.4-based wireless network solutions,
incorporating all the necessary hardware and software components. NXP’s JN514x range of wireless
microcontroller chips provides the optimum hardware platform for designing wireless network nodes that
combine high-performance processing and radio communications. NXP also supplies JN514x wireless
microcontrollers mounted on modules, and evaluation kits that simplify the development of custom
Products
` JN5142-J01 for JenNet-IP Smart Devices, JN5148-J01 for
JenNet-IP Gateways
` JN5148-001 for JenNet and IEEE802.15.4, JN5142-001 for
RF4CE and IEEE802.15.4
` JN5148-Z01 for ZigBee applications
` JN5148-001-M00, JN5148-001-M03, JN5148-001-M04:
modules for JenNet and IEEE802.15.4
Key features
` Ultra low-power MCU together with an IEEE802.15.4compliant radio transceiver
` Enhanced 32-bit RISC processor for high performance
and low power
` On-chip ROM and RAM for storage of application,
networking stack, and software libraries
` A rich mix of analog and digital peripherals
` Low-current solution for long battery-life
` Standard-power and high-power modules
` Software Developer’s Kit (SDK), including JenNet,
JenNet-IP and ZigBee networking stacks
Software
A selection of network protocol stacks, based on the industrystandard IEEE802.15.4, is available to support the wireless
connectivity requirements of your application. These include
JenNet, JenNet-IP, and ZigBee PRO, which are provided as a
set of software libraries.
JenNet is suitable for all proprietary applications. ZigBee
PRO is used for smart energy and other applications where
ZigBee interoperability is required. JenNet-IP provides IPv6
connectivity to the end node and is rapidly emerging as a
standard for lighting and automation applications in buildings.
Evaluation kit
Key applications
` Smart lighting / smart energy / smart grid
` Utilities metering
` Home and commercial building automation and control
` Remote control
` Security systems
` Location-aware services – eg asset management
NXP Semiconductors RF Manual 16th edition
69
Focus applications,
products & technologies
applications.
2.6 Technology
2.6.1
The first mainstream semiconductor company to offer GaN products
NXP Galium-Nitride (GaN) broadband amplifiers
A disruptive technology, setting new performance boundaries for RF power amplifiers
If independent market research claims come true, GaN product
sales will exceed 300 Musd in 2014. This can only happen if GaN
is made available through mainstream semiconductor companies,
and NXP is the first to make this happen. So, what is it about GaN
and RF power applications ? Simply put, GaN makes a step increase
in efficiency and power density performance over Si LDMOS in
most applications. This can be quantified in the Johnson’s Figure
of Merit (FoM) – a combination of significant RF performance
variables that has a baseline for Si at 1 and leads to a FoM for GaN
of 324. To put this into some context, GaAs, another commonly
used compound material in RF, has a FoM of 1.44. With such a high
FoM rating, GaN truly represents a breakthrough technology.
in product reliability and cost, and give our customers a high
degree of confidence in the supply chain. It's part of what's
needed to take GaN to the mainstream.
GaN products are termed High-Electron Mobility Transistors
(HEMT), a name that captures one of the intrinsic benefits of
GaN: the high electron drift velocity. These transistors are
depletion-mode devices, that is, devices that are normally on,
without the need for applying a gate bias. A negative gate
bias will be needed to switch the transistors off. This biasing
is not straightforward, but at NXP, we've developed complete
solutions (not just individual components) that include a tried
and tested bias circuit. We also provide continuous application
support throughout the life of the product.
Next-generation GaN devices from NXP will be super-efficient,
enabling a breakthrough in performance for the largest RF
power market segment: cellular base stations. In turn this
technology will enable a departure from linear amplifier
topologies with the onset of switched mode power amplifier
(SMPA) concepts. NXP’s commitment to exploit the technology
in a full portfolio of products will also lead to products for higher
frequency applications up to 10 GHz.
The first NXP GaN products will be unmatched broadband
amplifiers for use in applications requiring high RF performance
across a wide range of frequencies up to 3.5 GHz. NXP’s first
generation GaN process is designed for products operating
from a 50V supply voltage, delivering best-in-class efficiency
and linearity. The products will use industry-standard package
footprints enabling customers to adopt NXP’s products into
existing designs without changing the mechanical design.
A further advantage of GaN is that it is a very hard structure able
to withstand very high temperatures. NXP’s GaN transistors will
be specified to a maximum temperature of 250 °C, compared to
225 °C for Si LDMOS. Special packages are required to support
such high temperatures. In this area, NXP's GaN customers
benefit from our 30-year legacy in RF power products, and our
large industrial base. As a GaN supplier, we deliver excellence
GaN RF power amplifiers
Type
fmin (MHz) fmax (MHz) Pout (W) Matching
CLF1G0035-50
0
3500
CLF1G0035-100
0
CLF1G0035-200
0
CLF1G0060-10
VDS (V)
η D (%)
Pulsed
Package
SOT467
Planned
release
-
50
3500
100
-
50
52
14.8
Pulsed
SOT467
Q412
3500
200
-
50
50
14.2
Pulsed
SOT1228
Q313
0
6000
10
-
50
54
14
Pulsed
SOT1227
Q113
CLF1G0060-30
0
6000
30
-
50
54
14
Pulsed
SOT1227
Q113
CLF2G2536-100
CLF2G2536-300
CLF3G4060-30
CLF3G4060-350
2500
2500
4000
4000
3600
3600
6000
6000
100
300
30
350
I/O
I/O
I/O
I/O
28
28
28
28
65
65
55
55
13
13
13
13
Pulsed
Pulsed
Pulsed
Pulsed
SOT1135
SOT502
SOT1135
SOT502
Q413
Q413
Q114
Q114
NXP Semiconductors RF Manual 16th edition
14.2
Test
signal
50
70
54
Gp (dB)
Q312
Applications
Cellular, WiMAX, ISM, avionics,
S-band, general purpose
Cellular, WiMAX, ISM, avionics,
S-band, general purpose
Cellular, WiMAX, ISM, avionics,
S-band, general purpose
Cellular, WiMAX, ISM, avionics,
S-band, general purpose
Cellular, WiMAX, ISM, avionics,
S-band, general purpose
Cellular, WiMAX, S-band
Cellular, WiMAX, S-band
C-band
C-band
2.6.2
Completing NXP's RF power transistor offering: products in plastic packages (OMP)
NXP is currently developing a complete line of overmolded plastic (OMP) RF power
transistors and MMICs with peak powers ranging from 3 to 500 W. The main benefit of
plastic packages is cost effectiveness with little or no impact on performance. The range
of plastic devices will complement the extensive range of RF power products that NXP
offers in ceramic packages for all frequency ranges and applications up to 2.45 GHz.
` Final transistors in OMP package (SOT502-sized) ranging
from 140 to 200 W in frequency bands from 730 MHz
to 2.2 GHz
` Final transistors in OMP package (SOT502-sized) ranging
from 3 to 500 W in ISM frequency bands from a few MHz
up to 2.45 GHz
Focus applications,
products & technologies
Products in development
` Single-stage broadband drivers in HSOP-outlines, from
3 to 10 W
` Single-stage OMP drivers from 25 to 45 W, replacing
their ceramic equivalents for cost-sensitive applications
` Dual-stage MMICs from 30 to 60 W that can be used as
high-gain drivers or combined as low-power dual-stage
Doherty amplifiers
` Fully integrated plug-and-play Doherty PAs in a single
package (50 to 100 W)
Some of these products are available for sampling now, while
the rest of the portfolio will be rolled out throughout 2012.
RF power products in plastic packages (OMP)
Type
BLP7G22-10
BLM7G22S-60PB(G)
BLP7G07S-140P(G)
BLP7G09S-140P(G)
fmin
(MHz)
fmax
(MHz)
P1dB
(W)
700
2000
700
900
2200
2200
900
1000
10
60
140
140
Matching Package
I/O
O
O
SOT1179
SOT1212
SOT1224
SOT1224
Description
Gen7 OMP LDMOS transistor for WCDMA & GSM applications
Gen7 LDMOS MMIC for WCDMA applications (gull-wing)
Gen7 OMP push-pull LDMOS transistor for GSM, WCDMA & LTE applications (gull-wing)
Gen7 OMP push-pull LDMOS transistor for GSM, WCDMA & LTE applications (gull-wing)
NXP Semiconductors RF Manual 16th edition
71
2.6.3
Looking for a leader in SiGe:C? You just found us!
NXP QUBiC4 process technology
NXP's innovative, high-performance SiGe:C QUBiC4 process lets customers implement more functions into
less space, with the added benefits of competitive cost, superb reliability, and significant manufacturing
advantages. Our state-of-the-art QUBiC4 technology and extensive IP availability speed the migration from
GaAs components to silicon by enabling cutting-edge products with best-in-class low noise performance,
linearity, power consumption, immunity to out-of-band signals, spurious performance, and output power.
QUBiC is a mature process that has been in mass production since 2002 and has had continuous performance
upgrades added ever since. The QUBiC4 process is automotive-qualified and dual-sourced in two highvolume, NXP-owned 8-inch waferfabs that provide flexible, low-cost manufacturing with high yields and very
low ppm in the field.
There are three QUBiC4 variants, each with its own
benefits for specific application areas
QUBiC4+
The QUBiC4+ BiCMOS process features 0.25 μm CMOS with
5 metal layers for integration of dense digital logic-based
smart functionality, a rich set of active and passive devices for
high-frequency mixed-signal designs, including thick top metal
layers for high-quality inductors. The device set includes
35 GHz fT NPNs with 3.8 V breakdown voltage (BVce0) and low
noise figure (NF < 1.1 dB @ 2 GHz), 5 GHz fT VPNPs, a 28 GHz
high-voltage NPN with 5.9 V breakdown voltage, differential
and single-ended varicaps with Q-factor > 30, scalable
inductors with Q-factor > 20, 800 MHz FT lateral PNPs,
0.25 μm CMOS, 137, 220 & 12 to 2000 ohm/sq. poly and
active resistors, a 270 ohm/sq. SiCr thin film resistor,
a 5.7 fF/μm2 oxide capacitor and a 5 fF/μm2 MIM capacitor,
1 to 6 fF/μm2 oxide capacitors and various other devices
including L-PNPs, isolated NMOS, 3.3 V CMOS and RF-CMOS
transistors capacitor. The QUBiC4+ process is silicon-based
and ideal for applications up to 5 GHz (fT = 35 GHz,
NF < 1.1 dB @ 2 GHz), as well as for medium power amplifiers
up to 33 dBm.
QUBiC4X
The QUBiC4X BiCMOS process is a SiGe:C-based extension
of the QUBiC process for high-frequency mixed-signal designs
and offers a rich set of devices, including a 110 GHz fT NPN with
2.0 V breakdown voltage and very low noise figure (NF < 1.0 dB @
10 GHz), 0.25 μm CMOS, a variety of resistors, a 5.7 fF/μm2 oxide
capacitor, and a 5 fF/μm2 MIM capacitor.
72
NXP Semiconductors RF Manual 16th edition
The QUBiC4X is ideal for applications that typically operate at
up to 30 GHz (fT = 110 GHz , NF < 1.0 dB @ 10 GHz) and ultralow noise applications such as LNAs and mixers.
QUBiC4Xi
The QUBiC4Xi BiCMOS process further enhances the QUBiC4X
process and offers an additional feature set of devices for highfrequency mixed-signal designs. These include 180 GHz fT
NPNs with 1.4 V breakdown voltage and ultra-low noise figure
(NF < 0.7 dB @ 10 GHz), 0.25 μm CMOS, several resistors,
a 5.7 fF/μm2 oxide capacitor and a 5 fF/μm2 MIM capacitor.
QUBiC4Xi represents the newest SiGe:C process, with
improved fT (> 200 GHz) and even lower noise figure
(NF < 0.6 dB @ 10 GHz). It is ideal for applications beyond
30 GHz, such as LO generators.
SiGe:C
f / fmax = 180/200 GHz
T
QUBiC4X
SiGe:C
fT / fmax = 110/140 GHz
+VPNP
+TFR
QUBiC4+
+DG
+HVNPN
BiCMOS
f /f max = 35/80 GHz
Features
-4ML
QUBiC4X
` SiGe:C process
` fT/fMAX= 110/140 GHz
` Optimized for applications up to 30 GHz
Focus applications,
products & technologies
QUBiC4Xi
QUBiC4+
` Baseline, 0.25 µm CMOS, single poly, 5 metal
` Digital gate density 26k gates/mm2
` fT/fMAX= 35/80 GHz
` +TFR – Thin Film Resistor
` +DG – Dual Gate Oxide MOS
` +HVNPN – High Voltage NPN
` +VPNP – Vertical PNP (high Vearly)
` -4ML – high-density 5fF/µm2 MIM capacitor
` Wide range of active and high-quality passive devices
` Optimized for up to 5 GHz applications
QUBiC4Xi
` SiGe:C process
` Improves fT/fmax up to 180/200 GHz
` Optimized for ultra-low noise microwave above 30 GHz
QUBiC4+
QUBiC4X
QUBiC4Xi
2004
2006
2008
CMOS 0.25 um, bipolar 0.4 um,
double poly, deep trench, Si
CMOS 0.25 um, bipolar LV 0.4 um,
double poly, deep trench, SiGe:C
CMOS 0.25 um, bipolar LV 0.3 um,
double poly, deep trench, SiGe:C
LV NPN f T/Fmax (GHz)
35/80 (Si)
110/140 (SiGe:C)
180/200 (SiGe:C)
HV NPN f T/Fmax (GHz)
28/70 (Si)
60/120 (SiGe:C)
90/200 (SiGe:C)
NPN BVce0: HV/LV **
5.9 / 3.8 V
3.2 / 2.0 V
2.5 / 1.4 V
5 / >9
Planned
Planned
CMOS voltage /
dual gate
2.5 / 3.3 V
2.5 V
2.5 V
Noise figure NPN (dB)
2 GHz: 1.1
10 GHz: 1.0
10 GHz: 0.6
NMOS 58, PMOS 19
NMOS 58, PMOS 19
NMOS 58, PMOS 19
Isolation (60 dB @ 10 GHz)
STI and DTI
STI and DTI
STI and DTI
Interconnection
(AlCu with CMP W Plugs)
5 LM, 3 µm top metal
5 LM, 3 µm top metal
2 µm M4
5 LM, 3 µm top metal
NW, DN, Poly-Poly
5fF/um2 MIM
NW, DN, Poly-Poly
5fF/um2 MIM
NW, DN, Poly-Poly
5fF/um2 MIM
Poly (64/137/220/2K) Active (12, 57),
high-precision SiCr (270)
Poly (64/220/330/2K), Active (12, 57),
high-precision SiCr (tbd)
Poly (64/220/330/2K), Active (12, 57),
high-precision SiCr (tbd)
Varicaps (single-ended &
differential)
1x single-ended, Q > 40
3x differential, Q 30-180
1x single-ended, Q > 40
3x differential, Q 30-180
1x single-ended, Q > 40
3x differential, Q 30-180
Inductors (1.5nH @ 2 GHz)
- scalable
Q > 21, thick metal, deep trench isolation,
high R substrate
Q > 21, thick metal, deep trench isolation,
high R substrate
Q > 21, thick metal, deep trench isolation,
high R substrate
Other devices
LPNP, isolated NMOS, VPNP, transformers
Isolated-NMOS, transformers
Isolated-NMOS, transformers
32 (MIM) / 34 / 33 (HVNPN) / 35 (VPNP)
36 (MIM)
36 (MIM)
Release for production
CMOS/bipolar
V-PNP f T / BVcb0 (GHz / V)
RFCMOS f T (GHz)
Capacitors
Resistors (Ω/sq)
Mask count
NXP Semiconductors RF Manual 16th edition
73
2.6.4
High-performance, small-size packaging enabled by NXP's leadless package platform
and WL-CSP technology
RF small-signal packaging is driven by two major trends which partly overlap
` Lower parasitics for better RF performance
` Smaller form factors for portable applications
To cope with these trends, NXP uses several approaches
` For non-space-restricted applications the use of flat-pack packages instead of gull-wing versions reduces the parasitic
impedance because of shorter lead length (e.g. SOT343F instead of SOT343). This results in better RF performance in
the Ku and Ka bands (13-20GHz). To reduce PCB board space, a smaller version (SOT1206) is also available.
SOT343
SOT343F
SOT1206
` For space-restricted applications there are two routes to reduce the form factor and parasitics:
- Leadless package platform
- Wafer Level Chip Scale Package (WL-CSP) technology
The leadless package (UTLP) platform (>25 variants already
released) is highly flexible with respect to package size,
package height, and I/O pitch. For example, the 6-pin
packages range in size from 1.45 x 1 x 0.5 mm with 0.5 mm
pitch to 0.8 x 0.8 x 0.35 mm with 0.3 mm pitch. Package height
of 0.25 mm is planned.
Because of the compact size of the design, wire lengths and
parasitic impedance are also restricted. The absence of leads
further reduces the inductance.
SOT886
Wafer Level Chip Scale Package technology is ideally for
RF functions where the I/O pitch has to fit within the chip
area. With larger pitches and smaller designs (and thus little
effective chip area), it is more cost-effective to do the fan-out
using a leadless package instead of increasing the chip size.
The absence of wires gives the lowest parasitic inductance
available.
SOT891
SOT1208
74
NXP Semiconductors RF Manual 16th edition
0.65 x 0.44 x 0.29 mm (incl. 0.09 mm balls)
5 I/Os @ 0.22 mm pitch
3. Products by function
NXP RF product catalog:
http://www.nxp.com/rf
3.1
New products
DEV = in development
CQS = customer qualification samples
RFS = release for supply
Type
Application / description
Expected
status
June 2012
Planned
release
Section
RFS
Released
3.3.1
NEW: Wideband transistors
BFU730LX
Gen7 wideband transistor
BGU8007
GPS LNA, 19.0 dB gain, AEC-Q100
RFS
Released
3.4.1
BGU7003W
General-purpose unmatched LNA for FM radio
RFS
Released
3.4.1
BGU6101
Unmatched wideband MMIC w/ bias enable function & wide range of supply voltage
RFS
Released
3.4.1
BGU6102
Unmatched wideband MMIC w/ bias enable function & wide range of supply voltage
RFS
Released
3.4.1
BGU6104
Unmatched wideband MMIC w/ bias enable function & wide range of supply voltage
RFS
Released
3.4.1
Products by function
NEW: SiGe:C LNAs (for e.g. GPS)
NEW: LNAs for set-top boxes
BGU7044
LNA for STB tuning
RFS
Released
3.4.1
BGU7045
LNA for STB tuning
RFS
Released
3.4.1
NEW: General-purpose wideband amplifiers (50 Ω gain blocks)
BGA2874
IF gain block 30.5 dB, 2.5 V
RFS
Released
3.4.1
BGA2817
IF gain block 24 dB, 3 V
RFS
Released
3.4.1
BGA2818
IF gain block 31 dB, 3 V
RFS
Released
3.4.1
BGA2851
IF gain block 25 dB, 5 V
RFS
Released
3.4.1
BGA2867
IF gain block 27 dB, 5 V
RFS
Released
3.4.1
BGA2869
IF gain block 32.5 dB, 5 V
RFS
Released
3.4.1
NEW: Medium power amplifier MMICs
BGA7014
Medium power amplifier, 12.0 dB ,13.0 dBm P1dB, SOT89
Dev
Q4 2012
3.4.1
BGA7017
Medium power amplifier, 13.5 dB, 16.5 dBm P1dB, SOT89
Dev
Q4 2012
3.4.1
BGA7020
Medium power amplifier, 13.0 dB, 18.5 dBm P1dB, SOT89
Dev
Q4 2012
3.4.1
BGA7130
Medium power amplifier, 18.0 dB, 30 dBm P1dB, SOT908
RFS
Released
3.4.1
NEW: VGAs for wireless infrastructures
BGA7351
50 MHz to 250 MHz high linearity variable gain amplifier - 28 dB gain range
RFS
Released
3.4.1
BGA7210
400 MHz to 2750 MHz high linearity variable gain amplifier
RFS
Released
3.4.1
BGA7204
700 MHz to 3800 MHz high linearity variable gain amplifier
RFS
Released
3.4.1
NEW: LNAs for wireless infrastructures
BGU7051
LNA 900 MHz - from 0.5 to 1.5 GHz
RFS
Released
3.4.1
BGU7052
LNA 1.9 GHz - from 1.5 to 2.5 GHz
RFS
Released
3.4.1
BGU7053
LNA 2.5 GHz - from 2.3 to 2.8 GHz
RFS
Released
3.4.1
BGU7060
LNA with variable gain from 700 to 800 MHz
RFS
Released
3.4.1
BGU7061
LNA with variable gain from 700 to 950 MHz
RFS
Released
3.4.1
BGU7062
LNA with variable gain from 1710 to 1785 MHz
RFS
Released
3.4.1
BGU7063
LNA with variable gain from 1920 to 1980 MHz
RFS
Released
3.4.1
NXP Semiconductors RF Manual 16th edition
75
Type
Application / description
Expected
status
June 2012
Planned
release
Section
DEV
Q4 2012
3.4.2
NEW: PLL + VCO (LO generator) for wireless infrastructures
BGX7300
Rx LO generator, 400 MHz to 3 GHz
NEW: IQ modulators for wireless infrastructures
BGX7100
IQ modulator, ouput power 0 dBm
RFS
Released
3.4.2
BGX7101
IQ modulator, ouput power 4 dBm
RFS
Released
3.4.2
NEW: Dual mixers for wireless infrastructures
BGX7220
Dual mixer, NF 8 dB, IIP3 30 dBm, P < 1 W, 700 MHz to 1.2 GHz
RFS
Released
3.4.2
BGX7221
Dual mixer, NF 10 dB, IIP3 23 dBm, P < 1 W, 1.7GHz to 2.7 GHz
RFS
Released
3.4.2
NEW: RF power transistors for base stations
BLF6G15L(S)-40RN
Gen6 ceramic driver LDMOS transistor for GSM, WCDMA & LTE applications
RFS
Released
3.7.1
BLF6H10L(S)-160
Gen6 ceramic high-voltage LDMOS transistor for GSM, WCDMA & LTE applications
DEV
Q312
3.7.1
BLF7G20LS-260A
Gen7 ceramic asymmetrical Doherty LDMOS transistor for GSM & LTE applications
DEV
Q412
3.7.1
BLF7G24L(S)-160P
Gen7 ceramic push-pull LDMOS transistor for WCDMA & LTE applications
RFS
Released
3.7.1
BLF7G27LS-90PG
Gen7 ceramic push-pull LDMOS transistor for WCDMA & LTE applications (gull-wing)
RFS
Released
3.7.1
BLF8G10L(S)-160V
Gen8 ceramic LDMOS transistor for GSM, WCDMA & LTE applications
RFS
Released
3.7.1
BLF8G10LS-200GV
Gen8 ceramic LDMOS transistor for GSM, WCDMA & LTE applications (gull-wing)
DEV
Q412
3.7.1
BLF8G10LS-270GV
Gen8 ceramic LDMOS transistor for GSM, WCDMA & LTE applications (gull-wing)
DEV
Q412
3.7.1
BLF8G10L(S)-300P
Gen8 ceramic push-pull LDMOS transistor for GSM, WCDMA & LTE applications (gull-wing)
DEV
Q312
3.7.1
3.7.1
BLF8G10LS-400PGV
Gen8 ceramic push-pull LDMOS transistor for GSM, WCDMA & LTE applications (gull-wing)
DEV
Q412
BLF8G20L(S)-200V
Gen8 ceramic LDMOS transistor for GSM & LTE applications
RFS
Released
3.7.1
BLF8G20LS-270GV
Gen8 ceramic LDMOS transistor for GSM & LTE applications (gull-wing)
DEV
Q412
3.7.1
3.7.1
BLF8G20LS-270PGV
Gen8 ceramic push-pull LDMOS transistor for GSM & LTE applications (gull-wing)
DEV
Q412
BLF8G22LS-160BV
Gen8 ceramic LDMOS transistor for WCDMA & LTE applications
RFS
Released
3.7.1
BLF8G22LS-200GV
Gen8 ceramic LDMOS transistor for WCDMA & LTE applications (gull-wing)
DEV
Q312
3.7.1
BLF8G22LS-270GV
Gen8 ceramic LDMOS transistor for WCDMA & LTE applications (gull-wing)
DEV
Q312
3.7.1
BLF8G22LS-400PGV
Gen8 ceramic push-pull LDMOS transistor for WCDMA & LTE applications (gull-wing)
DEV
Q312
3.7.1
BLF8G24L(S)-200P
Gen8 ceramic push-pull LDMOS transistor for WCDMA & LTE applications
DEV
Q312
3.7.1
BLF8G27LS-140G
Gen8 ceramic LDMOS transistor for WCDMA & LTE applications (gull-wing)
DEV
Q412
3.7.1
BLF8G27LS-140V
Gen8 ceramic LDMOS transistor for WCDMA & LTE applications
DEV
Q412
3.7.1
BLF8G27LS-200PGV
Gen8 ceramic push-pull LDMOS transistor for WCDMA & LTE applications (gull-wing)
DEV
Q412
3.7.1
BLF8G27LS-280PGV
Gen8 ceramic push-pull LDMOS transistor for WCDMA & LTE applications (gull-wing)
DEV
Q412
3.7.1
BLM7G22S-60PB(G)
Gen7 LDMOS MMIC for WCDMA applications (gull-wing)
DEV
Q312
3.7.1
BLP7G07S-140P(G)
Gen7 OMP push-pull LDMOS transistor for GSM, WCDMA & LTE applications (gull-wing)
DEV
Q412
3.7.1
BLP7G09S-140P(G)
Gen7 OMP push-pull LDMOS transistor for GSM, WCDMA & LTE applications (gull-wing)
DEV
Q412
3.7.1
BLP7G22-10
Gen7 OMP LDMOS transistor for WCDMA & GSM applications
DEV
Q312
3.7.1
3.7.2
NEW: RF power transistors for broadcast / ISM applications
BLF174XR(S)
XR ceramic push-pull LDMOS transistor for ISM applications
DEV
Q312
BLF178XR(S)
XR ceramic push-pull LDMOS transistor for FM broadcast & ISM applications
RFS
Released
3.7.2
BLF2425M6L(S)180P
Gen6 ceramic push-pull LDMOS transistor for 2.45 GHz ISM applications
DEV
Q312
3.7.2
BLF2425M7L(S)140
Gen7 ceramic LDMOS transistor for 2.45GHz ISM applications
RFS
Released
3.7.2
BLF2425M7L(S)200
Gen7 ceramic LDMOS transistor for 2.45GHz ISM applications
DEV
Q412
3.7.2
BLF2425M7L(S)250P
Gen7 ceramic push-pull LDMOS transistor for 2.45 GHz ISM applications
RFS
Released
3.7.2
BLF25M612(G)
Gen6 ceramic LDMOS driver transistor for 2.45 GHz ISM applications (gull-wing)
DEV
Q312
3.7.2
BLF572XR(S)
XR ceramic push-pull LDMOS transistor for ISM applications
DEV
Q412
3.7.2
BLF574XR(S)
XR ceramic push-pull LDMOS transistor for ISM applications
DEV
Q312
3.7.2
BLF578XR(S)
XR ceramic push-pull LDMOS transistor for UHF broadcast & ISM applications
RFS
Released
3.7.2
BLF647P(S)
Ceramic push-pull LDMOS transistor for broadband applications
DEV
Q312
3.7.2
76
NXP Semiconductors RF Manual 16th edition
Type
Application / description
Expected
status
June 2012
Planned
release
Section
NEW: RF power transistors for aerospace and defense
BLL6G1214LS-250
Gen6 ceramic LDMOS transistor for L-band applications
RFS
Released
3.7.3
BLL6H1214LS-500
Gen6 high-voltage ceramic LDMOS transistor for L-band applications
DEV
Q412
3.7.3
BLS6G2735L(S)-30
Gen6 ceramic LDMOS driver transistor for S-band radar applications
RFS
Released
3.7.3
BLS7G2729L(S)-350P
Gen7 ceramic push-pull LDMOS transistor for S-band radar applications
RFS
Released
3.7.3
BLS7G3135L(S)-350P
Gen7 ceramic push-pull LDMOS transistor for S-band radar applications
DEV
Q412
3.7.3
BLU6H0410L(S)-600P
Gen6 high-voltage ceramic push-pull LDMOS transistor for UHF band radar applications
RFS
Released
3.7.3
NEW: Gallium Nitride (GaN) RF power amplifiers
CLF1G0060-10
Gen1 GaN broadband amplifier
DEV
Q113
3.7.4
CLF1G0060-30
Gen1 GaN broadband amplifier
DEV
Q113
3.7.4
CLF1G0035-50
Gen1 GaN broadband amplifier
DEV
Q312
3.7.4
CLF1G0035-100
Gen1 GaN broadband amplifier
DEV
Q412
3.7.4
JN5142-J01
JenNet-IP
RFS
Released
3.8
JN5142-001
RF4CE / IEEE802.15.4
RFS
Released
3.8
JN5148-J01
JenNet-IP
RFS
Released
3.8
JN5148-001
JenNet / IEEE802.15.4
RFS
Released
3.8
JN5148-Z01
ZigBee
RFS
Released
3.8
JN5148-001-M00
JenNet / IEEE802.15.4
RFS
Released
3.8
JN5148-001-M03
JenNet / IEEE802.15.4
RFS
Released
3.8
JN5148-001-M04
JenNet / IEEE802.15.4
RFS
Released
3.8
JenNet
Networking stack
RFS
Released
3.8
JenNet-IP
Networking stack
RFS
Released
3.8
ZigBee PRO
Networking stack
RFS
Released
3.8
NXP Semiconductors RF Manual 16th edition
Products by function
NEW: Low-power wireless microcontrollers and networking stacks
77
3.2
3.2.1
RF diodes
Varicap diodes
Varicap selection guide on www.nxp.com/varicaps
Easy-to-use parametric filters help you choose
the right varicap for your design.
Why choose NXP’s varicap diodes:
` Reference designs for TV and radio tuning
` Direct matching process
` Small tolerances
` Short lead time
` Complete portfolio covering broad range of frequencies and packages (including leadless)
` Reliable volume supply
VCO and FM radio tuning varicap diodes
@ f = 1 MHz
Type
BB145B
BB156
BB198
BB199
BB201
BB202^^
BB207^
BB208-02^
BB208-03^
Package
Number
of
diodes
SOD523
SOD323
SOD523
SOD523
SOT23
SOD523
SOT23
SOD523
SOD323
1
1
1
1
2
1
2
1
1
Configuration
SG
SG
SG
SG
CC
SG
CC
SG
SG
Cd
min
Cd
typ
Cd
max
@ VR
=
Cd
min
Cd
typ
Cd
max
@ VR
=
(pF)
(pF)
(pF)
6.4
14.4
25
36.5
89
28.2
76
19.9
19.9
16
95
81
-
7.2
17.6
28.5
42.5
102
33.5
86
23.2
23.2
(V)
(pF)
(pF)
(pF)
1
1
1
0.5
1
0.2
1
1
1
2.55
4.2
4.8
11.8
25.5
7.2
25.5
4.5
4.5
4.8
27.6
27.6
-
2.95
5.4
6.8
13.8
29.7
11.2
29.7
5.4
5.4
^ Includes special design for FM car radio (CREST-IC:TEF6860)
^^ Includes special design for mobile phone tuner ICs
rs
typ
rs
max
@f=
(V)
(Ω)
(Ω)
(MHz)
4
7.5
2
7.5
2.3
7.5
7.5
7.5
0.4
0.25
0.25
0.35
0.2
0.35
0.35
0.6
0.7
0.8
0.5
0.6
0.4
0.5
0.5
470
470
100
100
100
100
100
100
100
Cd1/
Cd2
max
@ V1
=
@ V2
=
(V)
Cd1/
Cd2
min
(V)
4
7.5
4
2
7.5
2.3
7.5
7.5
7.5
2.2
2.7
2.8
3.1
2.5
2.6
3.7
3.7
3.9
3.8
3.3
5.2
5.2
1
1
0.5
1
0.2
1
1
1
Type of connection:
CC:
SG:
common cathode
single
TV / VCR / DVD / HDD varicap diodes - UHF tuning
@ f = 1 MHz
Type
Package
Matched
BB149
BB149A
BB179
BB179B
BB179BLX
BB179LX
BB184
BB189
Unmatched
BB135
SOD323
SOD323
SOD523
SOD523
SOD882D
SOD882D
SOD523
SOD523
SOD323
Cd
min
Cd
typ
Cd
max
@ VR
=
(pF)
(pF)
(pF)
(V)
1.9
1.951
1.951
1.9
1.9
1.95
1.87
1.89
2.1
2.1
2.1
2.1
2.1
2
2.04
2.25
2.225
2.225
2.25
2.25
2.22
2.13
2.18
1.7
-
2.1
Bold = highly recommended product
78
NXP Semiconductors RF Manual 16th edition
rs
typ
rs
max
@f=
@
Cd =
(V)
(Ω)
(Ω)
(MHz)
(pF)
1
1
1
1
1
1
1
2
28
28
28
28
28
28
10
25
0.6
0.6
0.6
0.65
0.65
0.65
0.65
0.75
0.75
0.75
0.75
0.7
470
470
470
470
470
470
470
470
9
9
9
9
9
30
9
9
0.5
28
-
0.75
470
9
@ V1
=
@ V2
=
(V)
10
10.9
10.9
10
10.9
12
Cd1/Cd2
min
Cd1/Cd2
typ
Cd1/Cd2
max
28
28
28
28
28
28
10
25
8.2
8.45
8.45
8.45
8.45
6
6.3
9
9
9
9
9
9
7
7.3
28
8.9
-
@ V1
=
@ V2
=
(V)
(V)
2
2
2
2
2
2
2
1.8
0.5
1
1
1
1
1
1
2
28
28
28
28
28
28
10
25
10
10
10
10
10
5
5
10
-
-
-
-
∆Cd/
Cd
@
Ns
=
TV / VCR / DVD / HDD varicap diodes - VHF tuning
@ f = 1 MHz
Type
Package
Matched
BB148
BB152
BB153
BB178
BB178LX
BB182
BB187
BB187LX
Unmatched
BB131
BB181
BBY40
SOD323
SOD523
SOT23
Cd
typ
Cd
max
@ VR
=
(pF)
(pF)
(pF)
2.4
2.48
2.361
2.361
2.36
2.48
2.57
2.57
2.6
2.7
2.6
2.6
2.6
2.7
2.75
2.75
0.7
0.7
4.3
-
rs
typ
rs
max
@f=
@ Cd
=
(V)
(Ω)
(Ω)
(MHz)
(pF)
1
1
1
1
1
1
2
2
28
28
28
28
28
28
25
25
1
0.65
0.65
0.7
1
-
0.9
1.2
0.8
0.8
1.2
0.75
0.75
100
100
100
100
470
100
470
470
12
30
30
30
30
30
-
0.5
0.5
3
28
28
25
-
3
3
0.7
470
470
200
9
9
25
Cd1/
Cd2
typ
Cd1/
Cd2
max
@ V1
=
@ V2
=
(V)
Cd1/
Cd2
min
(V)
2.75
2.89
2.754
2.754
2.75
2.89
2.92
2.92
28
28
28
28
28
28
25
25
14.5
20.6
13.5
13.5
13.5
20.6
11
11
15
22
15
15
15
22
-
-
1.055
1.055
6
28
28
25
12
12
5
-
16
16
6.5
@ V1
=
@ V2
=
(V)
(V)
2
2
2
2
2
2
2
2
0.5
1
1
1
1
1
2
2
28
28
28
28
28
28
25
25
10
10
10
10
5
10
10
10
-
-
-
-
∆Cd/
Cd
@ Ns
=
PIN diodes
Cd
(fF)
PIN diode selection guide on www.nxp.com/pindiodes
Easy-to-use parametric filters help you choose the right
PIN diode for your design.
brb407
700
600
BAP65LX
Freq = 100 MHz, Cd @ VR = 0 V
rD @ 0.5 mA
rD @ 10 mA
BAP65LX
500
400
BAP50LX
BAP63LX
BAP63LX
BAP1321LX
BAP51LX
BAP51LX BAP1321LX
BAP142LX
BAP142LX
300
200
BAP64LX
BAP70-02
100
0
10−1
Why choose NXP’s PIN diodes:
` Broad portfolio
` Unrivalled performance
` Short lead time
` Low series inductance
` Low insertion loss
` Low capacitance
1
10
25
20
BAP70-20
BAP50LX
BAP64LX
BAP51LX
BAP142LX
BAP1321LX
BAP63LX
15
10
BAP65LX
5
BAP65LX
BAP65-02
BAP65-03
BAP65-05
BAP65-05W
BAP63LX
BAP63-02
BAP63-03
BAP63-05W
SOD882D
SOD523
SOD323
SOT23
SOT323
SOD882D
SOD523
SOD323
SOT323
Config
VR max
(V)
IF max
(mA)
1
1
1
2
2
1
1
1
2
SG
SG
SG
CC
CC
SG
SG
SG
CC
30
30
30
30
30
50
50
50
50
100
100
100
100
100
100
100
100
100
BAP50LX
BAP70-02
BAP64LX
BAP51LX
BAP142LX
BAP1321LX
BAP63LX
BAP65LX
10−1
1
10
Insertion Loss (dB)
For more information: www.nxp.com/pindiodes
@ f = 100 MHz
Number of
diodes
102
rD (Ω)
Freq = 1800 MHz, Isolation @ VR = 0 V
Insertion Loss @ 0.5 mA
Insertion Loss @ 10 mA
Isolation
(dB)
PIN diodes : typical rD @ 1 mA ≤ 2, switching diodes
Package
BAP64LX
BAP70-02
brb408
0
10−2
Type
BAP50LX
Products by function
3.2.2
SOD323
SOD323
SOD323
SOD523
SOD882D
SOD523
SOD523
SOD882D
Cd
min
@ IF = 0.5 mA
@ IF = 1 mA
@ f = 1 MHz
@ IF = 10 mA
@ VR
=0V
@ VR = 1 V
@ VR = 20 V
rD
typ
(Ω)
rD
max
(Ω)
rD
typ
(Ω)
rD
max
(Ω)
rD
typ
(Ω)
rD
max
(Ω)
Cd
typ
(pF)
Cd
typ
(pF)
Cd
max
(pF)
Cd
typ
(pF)
Cd
max
(pF)
2.3
2.5
2.5
2.5
3.3
3.5
3.5
3.5
0.94
1
1
1
1
1.87
1.95
1.95
1.95
3
3
3
3
0.49
0.56
0.56
0.56
0.56
1.19
1.17
1.17
1.17
0.9
0.9
0.9
0.9
0.9
1.8
1.8
1.8
1.8
0.61
0.65
0.65
0.7
0.7
0.34
0.36
0.4
0.4
0.48
0.55
0.55
0.575
0.575
0.29
0.32
0.35
0.35
0.85
0.9
0.9
0.9
0.9
-
0.37
0.375
0.375
0.425
0.425
0.24
0.25
0.27
0.3
0.3
0.32
0.32
0.35
PIN diode: selection on isolation and insertion loss in SOD882D
ISL (isolation )
f=
f=
f=
900 MHz 1800 MHz 2450 MHz
Type
VR =
VR =
VR =
0V
0V
0V
BAP65LX
10
5.5
3.9
BAP63LX
15.9
10.5
8.3
BAP55LX
19
14
12
BAP1321LX
17
12
10
BAP142LX
18
13
11
BAP51LX
19
15
13
BAP64LX
22
16
14
BAP50LX
20.3
17.9
16.5
IF =
0.5 mA
0.09
0.20
0.24
0.25
0.24
0.36
1.22
1.82
f=
900 MHz
IF =
IF =
1 mA
10 mA
0.06
0.06
0.17
0.12
0.17
0.08
0.19
0.11
0.18
0.10
0.25
0.12
0.22
0.12
1.07
0.25
IL (Insertion loss)
f=
f=
1800 MHz
2450 MHz
IF =
IF =
IF =
IF =
IF =
IF =
IF =
IF =
IF =
100 mA 0.5 mA 1 mA
10 mA 100 mA 0.5 mA 1 mA
10 mA 100 mA
0.05
0.09
0.07
0.07
0.06
0.10
0.08
0.08
0.07
0.11
0.20
0.17
0.13
0.11
0.21
0.19
0.15
0.15
0.05
0.25
0.18
0.09
0.07
0.26
0.19
0.10
0.08
0.09
0.26
0.20
0.13
0.11
0.27
0.21
0.14
0.12
0.07
0.24
0.19
0.11
0.09
0.25
0.25
0.12
0.10
0.90
0.36
0.26
0.14
0.10
0.38
0.27
0.15
0.12
0.09
1.21
0.23
0.13
0.10
1.22
0.24
0.15
0.11
1.80
1.06
0.26
1.81
1.08
0.27
-
Bold = highly recommended product
NXP Semiconductors RF Manual 16th edition
79
PIN diodes : typical rD @ 1 mA = 2.2 - 2.4, switching diodes
@ f = 100 MHz
Type
BAP55LX
BAP1321-02
BAP1321-03
BAP1321-04
BAP1321LX
BAP142LX
Package
Number of
diodes
Config
VR max
(V)
IF max
(mA)
SOD882D
SOD523
SOD323
SOT23
SOD882D
SOD882D
1
1
1
2
1
1
SG
SG
SG
SR
SG
SG
50
60
60
60
60
50
100
100
100
100
100
100
@ IF = 0.5 mA
rD
typ
(Ω)
3.3
3.4
3.4
3.4
3.3
3.3
rD
max
(Ω)
4.5
5
5
5
5
5
@ IF = 1 mA
rD
typ
(Ω)
2.2
2.4
2.4
2.4
2.4
2.4
rD
max
(Ω)
3.3
3.6
3.6
3.6
3.6
3.6
@ IF = 10 mA
rD
typ
(Ω)
0.8
1.2
1.2
1.2
1.2
1
rD
max
(Ω)
1.2
1.8
1.8
1.8
1.8
1.8
@ f = 1 MHz
@ VR
@ VR = 20 V
@ VR = 1 V
=0V
Cd
Cd
Cd
Cd
Cd
typ
typ
max
typ
max
(pF)
(pF)
(pF)
(pF)
(pF)
0.28
0.23
0.18
0.28
0.4
0.35
0.45
0.25
0.32
0.4
0.35
0.45
0.25
0.32
0.42
0.375
0.45
0.275 0.325
0.32
0.27
0.38
0.21
0.28
0.25
0.22
0.16
0.26
PIN diodes : typical rD @ 1 mA = 3.2 - 3.6, switching diodes
@ f = 100 MHz
Type
BAP51LX
BAP51-02
BAP51-03
BAP51-04W
BAP51-05W
BAP51-06W
Package
Number
of diodes
Config
VR max
(V)
IF max
(mA)
SOD882D
SOD523
SOD323
SOT323
SOT323
SOT323
1
1
1
2
2
2
SG
SG
SG
SR
CC
CA
60
60
50
50
50
50
100
50
50
50
50
50
@ IF = 0.5 mA
rD
typ
(Ω)
4.9
5.5
5.5
5.5
5.5
5.5
rD
max
(Ω)
9
9
9
9
9
-
@ IF = 1 mA
rD
typ
(Ω)
3.2
3.6
3.6
3.6
3.6
3.6
rD
max
(Ω)
6.5
6.5
6.5
6.5
6.5
-
@ f = 1 MHz
@ IF = 10 mA
rD
typ
(Ω)
1.4
1.5
1.5
1.5
1.5
2
rD
max
(Ω)
2.5
2.5
2.5
2.5
2.5
-
@ VR
=0V
Cd
typ
(pF)
0.3
0.4
0.4
0.4
0.4
0.4
@ VR = 1 V
Cd
typ
(pF)
0.22
0.3
0.3
0.3
0.3
0.3
Cd
max
(pF)
0.4
0.55
0.55
0.55
0.55
-
@ VR = 20 V
Cd
typ
(pF)
0.17
0.2
0.2
0.2
0.2
0.2
Cd
max
(pF)
0.3
0.35
0.35
0.35
0.35
-
PIN diodes : typical rD @ 1 mA = 10, attenuator/switching diodes
@ f = 100 MHz
Type
Package
Number
of diodes
BAP64Q
SOT753
BAP64-02
SOD523
BAP64-03
SOD323
BAP64-04
SOT23
BAP64-04W
SOT323
BAP64-05
SOT23
BAP64-05W
SOT323
BAP64-06
SOT23
BAP64-06W
SOT323
BAP64LX^
SOD882D
^ = attenuator / switching diode
4
1
1
2
2
2
2
2
2
1
Config
SR
SG
SG
SR
SR
CC
CC
CA
CA
SG
*= @ VR = 20 V
VR max
(V)
IF max
(mA)
100
175
175
175
100
175
100
175
100
60
100
100
100
100
100
100
100
100
100
100
@ IF = 0.5 mA
rD
typ
(Ω)
20
20
20
20
20
20
20
20
20
31
rD
max
(Ω)
40
40
40
40
40
40
40
40
40
50
@ IF = 1 mA
rD
typ
(Ω)
10
10
10
10
10
10
10
10
10
16
rD
max
(Ω)
20
20
20
20
20
20
20
20
20
26
@ f = 1 MHz
@ VR =
0V
Cd
rD
max
typ
(Ω)
(pF)
3,8
0.52
3.8
0.48
3.8
0.48
3.8
0.52
3.8
0.52
3.8
0.52
3.8
0.52
3.8
0.52
3.8
0.52
4.4
0.48
@ IF = 10 mA
rD
typ
(Ω)
2
2
2
2
2
2
2
2
2
2.6
@ VR = 1 V
@ VR = 20 V
Cd
typ
(pF)
0.37
0.35
0.35
0.37
0.37
0.37
0.37
0.37
0.37
0.34
Cd
typ
(pF)
0.23
0.23
0.23
0.23
0.23
0.23
0.23
0.23
0.23
0.17*
Cd
max
(pF)
-
Cd
max
(pF)
0.35
0.35
0.35
0.35
0.35
0.35
0.35
0.35
0.35
0.3*
PIN diodes : typical rD @ 1 mA = 14 - 16, attenuator diodes
@ f = 100 MHz
Type
BAP50-02
BAP50-03
BAP50-04
BAP50-04W
BAP50-05
BAP50-05W
BAP50LX
Package
Number
of diodes
Config
VR max
(V)
IF max
(mA)
SOD523
SOD323
SOT23
SOT323
SOT23
SOT323
SOD882D
1
1
2
2
2
2
1
SG
SG
SR
SR
CC
CC
SG
50
50
50
50
50
50
50
50
50
50
50
50
50
50
@ IF = 0.5 mA
rD
typ
(Ω)
25
25
25
25
25
25
26
rD
max
(Ω)
40
40
40
40
40
40
40
@ IF = 1 mA
rD
typ
(Ω)
14
14
14
14
14
14
14
rD
max
(Ω)
25
25
25
25
25
25
25
@ f = 1 MHz
@ VR =
0V
Cd
rD
max
typ
(Ω)
(pF)
5
0.4
5
0.4
5
0.45
5
0.45
5
0.45
5
0.45
5
0.4
@ IF = 10 mA
rD
typ
(Ω)
3
3
3
3
3
3
3
@ VR = 1 V
@ VR = 5 V
Cd
typ
(pF)
0.3
0.3
0.35
0.35
0.3
0.35
0.28
Cd
typ
(pF)
0.22
0.2
0.3
0.3
0.35
0.3
0.19
Cd
max
(pF)
0.55
0.55
0.6
0.6
0.5
0.6
0.55
Cd
max
(pF)
0.35
0.35
0.5
0.5
0.6
0.5
0.35
PIN diodes : typical rD @ 1 mA = 40, attenuator diodes
@ f = 100 MHz
Type
Package
Number
of diodes
BAP70Q
SOT753
4
BAP70-02
SOD523
1
BAP70-03
SOD323
1
BAP70-04W
SOT323
2
BAP70-05
SOT23
2
BAP70AM
SOT363
4
Bold = highly recommended product
80
Config
VR max
(V)
SR
SG
SG
SR
CC
SR
50
50
50
50
50
50
NXP Semiconductors RF Manual 16th edition
IF max
(mA)
100
100
100
100
100
100
SG = single
SR = series
@ IF = 0.5
mA
rD
typ
(Ω)
77
77
77
77
77
77
@ IF = 1 mA
rD
rD
rD
max
typ
max
(Ω)
(Ω)
(Ω)
100
40
50
100
40
50
100
40
50
100
40
50
100
40
50
100
40
50
CC = common cathode
CA = common anode
@ f = 1 MHz
@ IF = 10 mA
rD
typ
(Ω)
5.4
5.4
5.4
5.4
5.4
5.4
rD
max
(Ω)
7
7
7
7
7
7
@ VR
=0V
Cd
typ
(pF)
0.6
0.57
0.57
0.6
0.6
0.57
@ VR = 1 V
@ VR = 20 V
Cd
typ
(pF)
0.43
0.4
0.4
0.43
0.43
0.4
Cd
max
(pF)
0.25
0.2
0.2
0.25
0.25
0.2
Cd
max
(pF)
-
Cd
typ
(pF)
0.3
0.25
0.25
0.3
0.3
0.25
3.2.3
Band-switch diodes
Why choose NXP’s band-switch diodes:
` Reliable volume supplier
` Short lead time
` Low series inductance
` Low insertion loss
` Low capacitance
` High reverse isolation
Type
Package
VR max
(V)
IF max
(mA)
rD max
(Ω)
@ IF =
(mA)
@f=
(MHz)
Cd max
(pF)
@ VR =
(V)
@f=
(MHz)
BA277
BA591
BA891
BAT18
SOD523
SOD323
SOD523
SOT23
35
35
35
35
100
100
100
100
0.7
0.7
0.7
0.7
2
3
3
5
100
100
100
200
1.2
0.9
0.9
1
6
3
3
20
1
1
1
1
Schottky diodes
Products by function
3.2.4
Schottky diode selection guide on www.nxp.com/rfschottkydiodes
Easy-to-use parametric filters help you choose the right Schottky
diode for your design.
Why choose NXP’s Schottky diodes:
` Low diode capacitance
` Low forward voltage
` Single- and triple-isolated diode
` Small package
Applications
` Digital applications:
- Ultra high-speed switching
- Clamping circuits
` RF applications:
- Diode ring mixer
- RF detector
- RF voltage doubler
Low-capacitance Schottky diodes
VR max.
IF max.
(V)
(mA)
BAT17
SOT23
Single
4
30
PMBD353
SOT23
Dual-series
4
30
PMBD354^
SOT23
Dual-series
4
30
1PS76SB17
SOD323
Single
4
30
1PS66SB17
SOT666
Triple-isolated
4
30
1PS79SB17
SOD523
Single
4
30
1PS88SB82
SOT363
Triple-isolated
15
30
1PS70SB82
SOT323
Single
15
30
1PS70SB84
SOT323
Dual-series
15
30
1PS70SB85
SOT323
Dual c.c
15
30
1PS70SB86
SOT323
Dual c.a.
15
30
1PS66SB82
SOT666
Triple-isolated
15
30
1PS10SB82
SOD882
Single
15
30
Bold = highly recommended product
^ Diodes have matched capacitance
Type
Package
Configuration
VF max.
(mV)
450 @ IF = 1 mA
450 @ IF = 1 mA
450 @ IF = 1 mA
450 @ IF = 1 mA
450 @ IF = 1 mA
450 @ IF = 1 mA
340 @ IF = 1 mA
340 @ IF = 1 mA
340 @ IF = 1 mA
340 @ IF = 1 mA
340 @ IF = 1 mA
340 @ IF = 1 mA
340 @ IF = 1 mA
CD max.
(pF)
1 @ VR = 0 V
1 @ VR = 0 V
1 @ VR = 0 V
1 @ VR = 0 V
1 @ VR = 0 V
1 @ VR = 0 V
1 @ VR = 0 V
1 @ VR = 0 V
1 @ VR = 0 V
1 @ VR = 0 V
1 @ VR = 0 V
1 @ VR = 0 V
1 @ VR = 0 V
NXP Semiconductors RF Manual 16th edition
81
3.3
RF Bipolar transistors
3.3.1
Wideband transistors
RF wideband transistor selection guide on www.nxp.com/rftransistors
Easy-to-use parametric filters help you choose the right RF wideband
transistor for your design.
Why choose NXP’s wideband transistors:
st
th
` Broad portfolio (1 - 7 generation)
` Short lead time
` Smallest packages
` Volume delivery
Wideband transistors
The fT-IC curve represents transition frequency (fT)
characteristics as a function of collector current (IC) for the seven
generations of RF wideband transistors. A group of transistors
having the same IC and similar fT represents a curve. The curve
number matches with products in the selection tables of
this section (third column of each table), detailing their RF
characteristics.
Wideband transistors line-up per frequency
bra510
100
(33)
(37)
fT
(GHz)
7th generation
(39)
(35)
(27)
(26)
(29)
(25)
(36)
10
(31)
(20)
(30)
(38)
(40)
4th generation
(23)
(22)
(21)
(19)
(34)
(15)
(14)
(16)
(18)
3rd generation
(11)
(7)
(9)
(8)
(12)
(10)
2nd generation
(4)
(1)
1
0.1
0.5
0.2
1
(3)
2
5
1st generation
10
20
Pin
4
1
3
3
2
2
Figure 1
82
6th generation
5th generation
(32)
(41)
1
2
3
4
4
1
2
3
4
1
Figure 2
NXP Semiconductors RF Manual 16th edition
1
2
3
4
50
100
200
500
IC (mA)
Description
Type (Figure 1)
Collector
Base
Emitter
Emitter
Type/X (Figure 1)
Collector
Emitter
Base
Emitter
Type/XR (Figure 2)
Collector
Emitter
Base
Emitter
1000
Wideband transistors
Function
High-linearity, high-output amplifiers and
drivers
6 GHz –
12 GHz –
<6 GHz
12 GHz
18 GHz
LNAs, mixers, frequency multipliers, buffers
Frequency range
Band
Type
BFU610F
BFU630F
BFU660F
BFU690F
BFU725F/N1
BFU710F
BFU730F
BFU760F
BFU790F
<6 GHz
6 GHz –
12 GHz
12 GHz –
+18 GHz
L,S,C
X, Ku low
Ku high, Ka
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
L,S,C
X, Ku low
•
•
•
•
•
•
•
Oscillators
<6 GHz
6 GHz –
12 GHz
12 GHz –
+18 GHz
L,S,C
X, Ku low
Ku high, Ka
Ku high
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
Red = application note available on NXP.com
NPN
NPN
NPN
NPN
NPN
NPN
NPN
7
7
7
-
1900
1900
1900
-
1
1
1
-
3.6
3.6
3.6
-
@ IC = (mA)
@ VCE = (V)
1
1
-
-
1000
0.5
1
1.8
0.5
1
2
0.5
1
2
-70 -10
100 10
15 10
2
70 10
- 3.75
50 10 3.3
30
6
3.5
15 10
3
15 10
2
14 10 2.5
0.5
1
1.8
0.5
1
1.8
2.5
-15 -10 2.5
2.4
-30 -5 2.4
1000
1000
1000
1000
500
500
800
2000
1000
800
1000
1000
500
500
500
500
0.5
1
1
5
-50
50
30
5
5
2
1
0.5
-5
-5
-10
-10
1
1
1
10
-10
10
6
10
10
5
1
1
-10
-10
-5
-5
3
2.1
3
3
3
2000
1000
2000
1000
1000
5
5
5
-5
-10
10
10
10
-10
-5
800
800
2000
2000
2000
2000
2000
2000
2000
1000
2000
2000
2000
2000
2000
2000
2000
100
50
80
80
70
15
15
30
30
45
70
15
30
30
30
30
30
1000
1000
1000
1000
500
1000
1000
1000
1000
1000
1000
15
15
5
5
45
5
5
5
5
5
5
8
8
8
8
10
8
8
8
8
8
8
2.5
2.5
2.3
2.3
3
2.7
3
3
3
2.1
2.1
2000
2000
2000
2000
1000
2000
2000
2000
2000
2000
2000
5
5
5
5
45
15
5
5
5
5
5
8
8
8
8
10
8
8
8
8
8
8
SOT23
SOT323
SOT23
1
1.6
2.3
15
15
5
25 300 NPN
50 300 NPN
6.5 30 NPN
BFG25A/X
BFG25AW
BFG25AW/X
BFG31
BFG35
BFG92A/X
BFG97
BFQ149
BFQ18A
BFQ19
BFR106
BFR92A
BFR92AW
BFS17A
BFS25A
BFT25A
BFT92
BFT92W
BFT93
BFT93W
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
18
18
18
10
11
7
10
10
11
10
10
7
7
4
18
18
7
7
9
9
SOT143B
5
SOT343N 5
SOT343N 5
SOT223
5
SOT223
4
SOT143B
5
SOT223
5.5
SOT89
5
SOT89
4
SOT89
5.5
SOT23
5
SOT23
5
SOT323
5
SOT23
2.8
SOT323
5
SOT23
5
SOT23
5
SOT323
4
SOT23
5
SOT323
4
5
5
5
-15
18
15
15
-15
18
15
15
15
15
15
5
5
-15
-15
-12
-12
6.5
6.5
6.5
-100
150
25
100
-100
150
100
100
25
25
25
6.5
6.5
-25
-35
-35
-50
32
500
500
1000
1000
400
1000
1000
1000
1000
500
300
300
300
32
32
300
300
300
300
NPN
NPN
NPN 16 1000 0.5
PNP 16 500 -70
NPN 15 500 100
NPN 16 1000 15
NPN 16 500 70
PNP 12 500 -50
NPN
NPN 11.5 500 50
NPN
NPN 14 1000 15
NPN 14 1000 15
NPN
NPN
NPN
PNP 18 500 -14
PNP 17 500 -15
PNP 16.5 500 -30
PNP 15.5 500 -30
18
16
1
8
-10 12
10 11
10 11
10 12
-10
10 7.5
- 11.5
10
8
10
8
- 13.5
13
15
-10
-10 11
-5
-5 10
1000
2000
2000
800
800
2000
800
800
800
2000
2000
800
1000
1000
1000
BFG135
BFG198
BFG590
BFG590/X
BFG591
BFG67
BFG67/X
BFG93A
BFG93A/X
BFG94
BFQ591
BFQ67W
BFR93A
BFR94A^
BFR93AR
BFR93AW
BFR94AW^
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
16
15
22
22
22
14
14
8
8
8
22
14
8
8
8
8
8
SOT223
SOT223
SOT143B
SOT143B
SOT223
SOT143B
SOT143B
SOT143B
SOT143B
SOT223
SOT89
SOT323
SOT23
SOT23
SOT23
SOT323
SOT323
15
10
15
15
15
10
10
12
12
12
15
10
12
12
12
12
12
150
100
200
200
200
50
50
35
35
60
200
50
35
35
35
35
35
1000
1000
400
400
2000
380
380
300
300
700
2250
300
300
300
300
300
300
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
10
8
4
4
12
8
8
8
8
12
8
8
8
8
8
8
Bold = highly recommended product
7
8
5
5
7
8
8
6
6
6
7
8
6
6
6
5
5
Polarity
3
3
1
Type
1
1
1
16
18
13
13
13
17
17
16
16
11
13
13
13
13
13
13
500
500
900
900
900
1000
1000
1000
1000
900
1000
1000
1000
1000
1000
1000
100
50
80
80
70
15
15
30
30
70
15
30
30
30
30
30
12
15
7.5
7.5
7.5
10
10
10
10
13.5
5.5
8
7
7
7
8
8
10
8
4
4
12
8
8
8
8
10
12
8
8
8
8
8
8
1.7
1.7
1.7
1.7
2.7
1.3
1.9
1.9
1.9
1.5
1.5
NF (typ) (dB)
-
BFS17
BFS17W
BFT25
NF (typ) (dB)
-
IC (max) (mA)
5
5
1
VCEO (max) (V)
2
2
1
f T (typ) (GHz)
500
500
500
Package
4.5
4.5
3.8
Curve
@ VCE = (V)
@ f = (MHz)
800
@ IC = (mA)
GUM (typ) (dB)
12
@ f = (MHz)
@ VCE = (V)
1
@ VCE = (V)
@ IC = (mA)
1
@ IC = (mA)
@ f = (MHz)
500
@ f = (MHz)
GUM (typ) (dB)
18
Generation
P tot (max) (mW)
RF wideband transistors generations 1 to 3
^ AEC-Q101 qualified (some limitations apply)
NXP Semiconductors RF Manual 16th edition
83
Products by function
GUM
(typ)
(dB)
400
400
400
2000
2100
2000
2000
@ VCE =
(V)
Polarity
250
250
250
500
250
250
500
@ IC =
(mA)
P tot (max)
(mW)
8
8
10
10
8
10
9.5
SOT143
SOT143
SOT343
SOT223
SOT223H
SOT223
SOT223
@f=
(MHz)
IC (max)
(mA)
BFG10
BFG10/X
BFG10W/X
BLT50
BLT70
BLT80
BLT81
VCEO
(max)
(V)
Type
Package
RF power transistors for portable equipment (VHF)
1800
1800
1800
1800
5
5
15
15
3
3
3
3
-
-
-
-
1
1
1.1
1.1
5
5
5
5
5
20
20
20
20
20
40
40
40
40
40
40
40
5
5
20
20
40
5
20
40
-
6
6
6
6
6
6
6
6
6
6
8
8
8
8
8
8
8
6
6
6
6
8
6
6
8
-
8.5
8.5
19.4
19.4
5
5
15
15
3
3
3
3
@ f = (MHz)
10
10
10
10
10
26
26
26
26
26
34
34
34
34
34
34
34
10
10
26
26
34
10
26
34
-
@ VCE = (V)
@ VCE = (V)
NPN 18
NPN 18
NPN 18.3
NPN 18.3
5
5
5
5
5
20
20
20
20
20
40
40
40
40
40
40
40
5
5
20
20
40
5
20
40
-
@ VCE = (V)
1.9
1.9
1.9
1.9
1.9
1.9
1.9
1.9
1.85
1.85
2.1
2.1
2.1
2.1
2.1
2.1
2.1
1.9
1.9
2.7
1.9
1.9
1.9
1.9
2.1
1.9
1.9
2.1
2
2
2.1
2.1
1.8
@ IC = (mA)
6
6
6
6
6
6
6
6
6
6
8
8
8
8
8
8
8
3
3
8
8
6
6
6
6
8
6
6
8
6
6
6
6
6
@ IC = (mA)
5
5
5
5
5
20
20
20
5
5
10
10
10
10
10
10
10
1
5
40
15
5
1.25
5
5
10
1.25
5
10
5
5
5
5
5
IP3 (typ) (dBm)
900
900
900
900
900
900
900
900
900
900
900
900
900
900
900
900
900
900
900
900
1000
900
900
900
900
900
900
900
900
1000
1000
1000
1000
1000
@ IC = (mA)
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.1
1.1
1.3
1.3
1.3
1.3
1.3
1.3
1.3
1.1
1.2
1.9
1.7
1.2
1.2
1.1
1.1
1.3
1.2
1.1
1.3
1.4
1.3
1.5
1.5
1.3
PL(1dB) (typ) (dBmW)
6
6
6
6
6
6
6
6
6
6
8
8
8
8
8
8
8
3
3
8
6
6
6
6
8
6
6
8
6
6
6
6
6
2000 1.25
2000 1.25
2000 1.25
2000 1.25
2000 1.25
2000
5
2000
5
2000
5
2000
5
2000
5
2000 10
2000 10
2000 10
2000 10
2000 10
2000 10
2000 10
2000
5
2000
5
2000 15
2000
5
2000 1.25
2000
5
2000
5
2000 10
2000 1.25
2000
5
2000 10
2000
5
2000
5
2000
5
2000
5
2000
5
6
6
6
6
6
6
6
6
6
6
8
8
8
8
8
8
8
3
3
8
6
6
6
6
8
6
6
8
6
6
6
6
6
4
4
4
4
4
17
17
17
17
17
21
21
21
21
21
21
21
4
5
17
17
21
4
17
21
-
6
6
6
6
6
6
6
6
6
6
8
8
8
8
8
8
8
6
6
6
6
8
6
6
8
-
900
900
900
900
900
900
900
900
900
900
900
900
900
900
900
900
900
900
900
900
900
900
900
900
900
-
2000
2000
2000
2000
3
3
3
3
1.8
1.8
8.7
8.7
3
3
3
3
1800 5
1800 5
1800 15
1800 15
@ VCE = (V)
60
60
210
210
5
5
5
5
5
20
20
20
20
20
40
40
40
40
40
40
40
5
20
15
5
5
20
20
40
5
20
40
15
30
15
15
30
@ IC = (mA)
10
10
35
35
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
@ f = (MHz)
6
6
6
6
14
14
14
14
13
13
12
12
12
13
13
13
11
11
11
11
11
10
10
10
9
10
9
8
10
10
9
9
7
10
9
8
9.5
8
10
10
9.2
NF (typ) (dB)
SOT143R
SOT343R
SOT143R
SOT343R
@ VCE = (V)
30
30
31
31
@ IC = (mA)
4.5
4.5
4.5
4.5
@ f = (MHz)
BFG310/XR
BFG310W/XR
BFG325/XR
BFG325W/XR
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NF (typ) (dB)
150
150
500
500
500
300
300
300
500
500
400
400
400
500
500
500
650
500
1000
1,200
300
150
150
300
150
500
150
300
500
360
365
250
150
270
@ VCE = (V)
18
18
18
18
18
70
70
70
70
70
120
120
120
120
120
120
120
18
70
120
50
18
18
70
70
120
18
70
120
50
100
50
50
100
@ IC = (mA)
P tot (max) (mW)
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
8
8
15
10
15
15
15
15
15
15
15
15
10
10
10
10
10
@ f = (MHz)
IC (max) (mA)
SOT143B 9
SOT143B 9
SOT343N 9
SOT343N 9
SOT343R 9
SOT143B 9
SOT143B 9
SOT143R 9
SOT343N 9
SOT343N 9
SOT143B 9
SOT143B 9
SOT143R 9
SOT343N 9
SOT343N 9
SOT343R 9
SOT223
9
SOT363A 9
SOT363A 9
SOT89
9
SOT23
8
SOT23
9
SOT416
9
SOT23
9
SOT416
9
SOT23
9
SOT323
9
SOT323
9
SOT323
9
SOT23
8
SOT23
8
SOT323
8.5
SOT416
9
SOT323
8.5
GUM (typ) (dB)
VCEO (max) (V)
19
19
19
19
19
20
20
20
20
20
21
21
21
21
21
21
21
19
20
21
14
19
19
20
20
21
19
20
21
20
21
20
20
21
Polarity
Curve
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
f T (typ) (GHz)
Generation
BFG505
BFG505/X
BFG505W
BFG505W/X
BFG505W/XR
BFG520
BFG520/X
BFG520/XR
BFG520W
BFG520W/X
BFG540
BFG540/X
BFG540/XR
BFG540W
BFG540W/X
BFG540W/XR
BFG541
BFM505
BFM520
BFQ540
BFQ67
BFR505
BFR505T
BFR520
BFR520T
BFR540
BFS505
BFS520
BFS540
PBR941
PBR951
PRF947
PRF949
PRF957
Package
Type
RF wideband transistors generations 4 and 4.5
1
1
3
3
SOT343F
SOT343F
SOT343F
SOT343F
SOT343F
SOT343F
SOT343F
SOT883C
SOT343F
SOT343F
40
40
40
40
70
70
70
53
70
70
5
10
5
30
5
70
5 100
2.8 10
2.8 40
2.8 30
3.0 30
2.8 70
2.8 100
50
130
200
300
30
136
130
160
200
250
NPN 21
NPN 28
NPN 28.5
NPN 25.6
NPN 16.5
NPN 18
NPN 18.5
NPN 13.3
NPN 25
NPN 20.4
Bold = highly recommended product
84
NXP Semiconductors RF Manual 16th edition
PL(1dB) (typ) (dBmW)
34
35
36
37
38
33
39
40
41
900
900
900
900
900
900
1
1
2
2
2
8
2
2
2
2
2
2
1.6
1.2
1.2
1.2
1.2
1.8
2000
2000
2000
2000
2000
2000
1
1
2
2
2
8
2
2
2
2
2
2
5
1
5
2
12 2
12 2
12 2
20 3.6
900
1
6
1
2000 10 15 10
2000 25 22 25
2000 25 22 25
2000 25 22 25
2000 1 28 80
5800
2400
1500
1500
12000
5800
5800
5800
2400
2400
8
25
60
90
8
25
25
25
60
90
2
2
2
2
2
2
2
2
2
2
0.75
0.58
0.6
0.7
0.9
0.47
0.56
0.55
0.5
0.56
2400
1500
1500
1500
5800
2400
2400
2400
1500
1500
1
5
20
50
2
5
5
5
20
50
2
2
2
2
2
2
2
2
2
2
1.4 5800 1
0.73 2400 5
0.75 2400 20
0.9 2400 50
1.5 12000 2
0.7 5800 5
0.8 5800 5
0.8 5800 5
0.6 2400 20
0.7 2400 50
2
2
2
2
2
2
2
2
2
2
8
-
- 14 8
5
- 23 25 5
- 30 60 5
- 35 90 5
- 14.5 8
2
5800 25 19 25 2
- 20.5 25 2
- 26 12.4 2.3
- 23 60 2
- 24 90 2
2
-
IP3 (typ) (dBm)
1
0.9
0.8
0.8
0.8
1.2
@ IC = (mA)
3.6
2
2
2
2
2
2
@ f = (MHz)
1
3
10
25
25
25
80
@ VCE = (V)
1900
2000
2000
2000
2000
2000
2000
NF (typ) (dB)
10
22
21
23
22
20
16
NF (typ) (dB)
@ VCE = (V)
6
6
6
6
7
7
7
7
7
7
@ IC = (mA)
BFU610F
BFU630F
BFU660F
BFU690F
BFU710F
BFU725F/N1
BFU730F
BFU730LX
BFU760F
BFU790F
@ f = (MHz)
NPN
NPN
NPN
NPN
NPN
NPN
NPN
@ VCE = (V)
Polarity
600
16
54
135
135
135
360
@ IC = (mA)
P tot (max) (mW)
4.5 500
4.5 3.6
4.5 12
4.5 30
4.5 30
4.5 30
4.5 250
@ f = (MHz)
IC (max) (mA)
17
22
25
25
25
21
@ VCE = (V)
VCEO (max) (V)
SOT343R
SOT343R
SOT343R
SOT343F
SOT343R
SOT343R
SOT343R
@ IC = (mA)
f T (typ) (GHz)
32
25
26
27
27
27
29
@ f = (MHz)
Curve
5
5
5
5
5
5
5
GUM (typ) (dB)
Generation
BFG21W
BFG403W
BFG410W
BFG424F
BFG424W
BFG425W
BFG480W
Package
Type
RF wideband transistors generations 5 to 7
1
2
2
2
2
2
3.4
3.4.1
RF ICs
RF MMIC amplifiers and mixers
RF MMIC amplifiers and mixers selection guide on www.nxp.com/mmics
Easy-to-use parametric filters help you choose the right zRF MMIC for your design.
Why choose NXP's RF MMIC amplifiers and mixers:
` Reduced RF component count
` Easy circuit design-in
` Reduced board size
` Short time-to-market
` Broad portfolio
` Volume delivery
` Short lead time
Gp [dB]
Type
Package
BGA2870
BGA2874
SOT363
SOT363
2.5
2.5
BGA2800
BGA2803
BGA2748
BGA2714
BGA2801
BGA2802
BGA2815
BGA2817
BGA2819
BGM1012
BGA2816
BGA2818
BGA2819
BGA2850
BGA2851
BGA2715
BGA2717
BGA2712
BGA2866
BGA2867
BGA2709
BGA2716
BGA2776
BGA2865
BGA2868
BGA2869
BGM1013
BGM1014
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
3
3
3
3
3
3
3
3
3
3
3
3
3
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
Pl(1dB) [dBm]
NF [dB]
IP3o[dBm]
[Ohm]
External
Inductor
13.0
17.0
2150
MHz
50
50
N
N
8.0
2.0
-1.4
0.0
9.0
6.0
10.0
15.0
11.0
13.0
8.0
14.0
14.0
8.0
5.0
0.6
6.3
6.0
12.0
14.1
14.0
15.9
14.4
10.0
21.5
19.0
18.6
15.1
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
75
75
N
N
N
N
N
N
N
N
N
Y
N
N
N
N
N
N
N
N
N
N
Y
Y
Y
N
N
N
Y
Y
250
MHz
500
MHz
750
MHz
250
MHz
500
MHz
750
MHz
250
MHz
500
MHz
750
MHz
250
MHz
750
MHz
15.6
16.0
31.2
31.1
250
MHz
31.1
31.0
950
MHz
31.0
30.6
2150
MHz
5.0
5.0
250
MHz
4.0
4.0
950
MHz
4.0
4.0
2150
MHz
3.1
3.0
250
MHz
3.2
3.1
950
MHz
3.7
3.4
2150
MHz
15.0
19.0
950
MHz
10.5
5.8
5.7
4.6
14.3
12.5
18.2
20.0
16.0
14.6
22.0
19.9
18.0
9.1
7.0
4.3
8.0
12.3
17.4
21.7
23.5
15.9
24.4
26.4
26.0
22.0
27.5
21.0
19.9
23.6
17.6
20.7
22.2
25.6
25.8
24.5
27.0
19.6
31.9
30.1
30.0
23.2
23.3
15.6
20.0
21.1
23.2
26.4
22.5
22.4
22.9
30.9
31.5
30.9
35.3
30.2
20.5
23.4
21.9
20.4
22.4
25.8
25.3
24.7
27.0
20.0
32.0
29.8
30.0
24.0
24.7
21.5
24.2
21.2
23.9
27.2
22.7
22.8
23.2
32.2
32.8
30.9
35.6
32.2
20.2
23.0
17.8
20.8
23.0
25.5
25.2
25.1
28.0
20.4
26.9
30.0
31.0
22.9
25.2
23.3
25.1
22.0
24.3
27.2
23.0
22.9
23.2
29.6
33.5
32.2
32.1
34.3
-6.0
-6.0
-9.2
-7.9
2.0
1.0
5.0
6.0
2.0
6.0
5.0
6.0
5.0
-2.0
-8.0
-10.9
-9.0
0.0
-3.0
1.0
5.0
1.0
3.4
3.7
3.7
1.7
2.4
3.8
4.2
3.7
3.9
3.6
3.6
1.9
2.2
3.8
4.1
3.8
3.9
3.2
4.8
3.2
3.3
3.1
4.1
3.2
2.6
2.3
3.9
3.8
3.8
4.0
5.3
4.9
3.9
4.0
3.9
4.6
4.2
3.7
3.4
2.4
3.0
3.9
3.6
3.7
3.8
3.3
4.9
3.2
3.3
3.4
4.0
3.0
3.1
2.9
4.3
3.9
3.7
5.1
5.5
5.3
4.0
4.1
4.0
4.9
4.2
11.0
5.0
-1.9
2.1
14.0
13.0
17.0
18.0
12.0
18.0
15.0
18.0
16.0
10.0
8.0
2.3
10.0
11.0
17.0
18.8
22.0
22.2
18.6
19.0
23.5
20.0
22.7
20.5
Vcc (V) Is (mA)
-7.8
2.0
3.0
8.0
6.0
7.0
7.0
5.0
-3.0
4.0
6.8
9.0
8.8
-4.0
-8.0
-2.6
0.2
4.0
6.5
8.3
8.9
7.2
8.0
11.0
8.8
13.0
11.2
4.9
3.2
3.5
3.0
4.2
4.0
2.6
2.3
4.2
3.9
3.7
4.3
5.5
4.7
3.8
4.0
3.0
-2.0
-5.0
-8.5
-3.1
-2.0
3.0
4.9
5.7
6.1
6.0
2.0
8.5
7.6
8.1
5.7
3.8
4.6
4.3
Zout
Products by function
General-purpose wideband amplifiers (50 Ω)
General-purpose LNA MMICs
|S21|2 [dB]
(1)
Type
Package
BGA2001
BGA2002 (1)
BGA2003
BGA2011
BGA2012
BGU7003
BGU7003W
BGU6101
BGU6102
BGU6104
Vcc
(V)
Is
(mA)
SOT343R
SOT343R
SOT343R
SOT363
SOT363
SOT891
SOT886
SOT1209
SOT1209
2.5
2.5
2.5
3
3
2.5
2.5
3
3
4.0
4.0
10.0
15.0
7.0
5.0
5.0
1.5
3.0
SOT1209
3
6.0
450
MHz
900 1800
MHz MHz
18.0
18.0
19.0
19.0
2400
MHz
Pl(1dB) [dBm]
5800 450
MHz MHz
900 2400 450
MHz MHz MHz
14.0
14.0
14.0
NFmin [dB]
900 1800 2400 5800 450
MHz MHz MHz MHz MHz
1.3
1.3
1.8
1.5
16.0
13.0
18.5
15.2
15.2
13.0 (2)
14.0 (3)
22.5
18.5
12.8 (4)
AEC-Q101 qualified (2) Icc 3 mA (3) Icc 6 mA (4) Icc 12 mA
1.3
1.3
1.8
900 1800
MHz MHz
-7.4
-7.4
-6.5
10.0
1.7
20.0
20.0
12.0
16.5
11.4
11.4
-11.0
-5.0
0.5
-11.5 -6.5 (2) 0.8
-5.5 0 (3)
0.7
0.5 6.5 (4) 0.8
0.6
0.6
0.8
0.8
0.8
ESD
protection
IP3o [dBm]
2400
MHz
5800
MHz
kV
HBM
-4.5
-4.5
-4.8
1
1
10.0
0.8
0.8
1.3 (2)
1.2 (3)
1.1 (4)
1.5
1.5
-2.5
5.5
11.0
-2.0
6.0
12.0
6.5 (2)
11.5 (3)
18.5 (4)
3
3
3
Bold = highly recommended product Bold red = new, highly recommended product
NXP Semiconductors RF Manual 16th edition
85
SiGe:C LNAs (for GPS and others)
@ 1.575 GHz
(dBm)
Typ
Max
Min
Typ
Max
3
-
4.5
4.5
4.8
4.8
4.1
4.6
15
-
16
-
18.3
16.5*
16.5*
18.5**
18.5**
17.5****
19.0***
20
-
* 16.5 dB without jammer / 17.5 dB with jammer
** 18.5 dB without jammer / 19.5 dB with jammer
*** 19.0 dB without jammer / 20.5 dB with jammer
**** 17.5 dB without jammer / 19 dB with jammer
0.8
0.9
0.9
0.9
0.9
0.6 #
0.75 # -15 -12
-14
-14
-15
-15
-
- -20 -11 - -11 -8 -11 - -11 -8 -12 - -14 -11 -12 - -14 -11 -10 - -8 - -13 -10 - 1
Typ
Vcc = 2.2 V, Typ
Min
2.85
2.85
2.85
2.85
2.85
3.1
2.2
Vcc = 2.2 V, Min
Max
2.2
1.5
1.5
1.5
1.5
1.5
1.5
Vcc = 1.5 V, Min
Min
Vcc = 1.8 V, Typ
SOT891
SOT886
SOT886
SOT886
SOT886
WL-CSP
SOT886
Vcc = 1.8 V, Min
BGU7003
BGU7004^
BGU7005
BGU7007
BGU7008^
BGU8006
BGU8007
Vcc = 2.85 V, Min
(dBm)
Vcc = 2.85 V, Typ
(dB)
Vcc = 2.5 V, Icc = 5 mA
IP3i
(dB)
Vcc = 2.2 V, Typ
PL(1dB)
(mA)
Vcc = 2.2 V, Min
NF
(V)
Vcc = 1.8 V, Typ
|s21|2
Vcc = 1.8 V, Min
Icc
Vcc = 1.5 V, Typ
Vcc
Package
Input third-order intercept point
f1 = 1713 MHz, f2 = 1851 MHz
Vcc = 1.5 V, Min
Input power at 1 dB gain
compression
Vcc = 2.85 V, Min
Noise
figure
Vcc = 2.85 V, Typ
Insertion power
gain
Vcc = 2.5 V, Icc = 5 mA
Supply current
Vcc = 1.5 V, Typ
Type
Supply
voltage
4
5
5
1
1
-
9
9
4
4
5
-
2
5
0
-
5
5
2
2
-
12
12
5
5
8
-
^ AEC-Q101 qualified (some limitations apply)
Evaluation board losses excluded
#
LNAs for set-top boxes (75 Ω)
Package
Frequency
range
BGU7031
SOT363
(MHz)
40 - 1000
BGU7032
SOT363
40 - 1000
BGU7033
SOT363
40 - 1000
BGU7041
SOT363
40 - 1000
BGU7042
SOT363
40 - 1000
Type
BGU7044
SOT363
40 - 1000
BGU7045
SOT363
40 - 1000
@
Mode
VCC
ICC
GP 10 dB
GP 10 dB
Bypass
GP 10 dB
GP 5 dB
Bypass
GP 10 dB
GP 10 dB
Bypass
GP 14 dB
GP 14 dB
Bypass
(V)
5
5
5
5
5
5
3.3
3.3
3.3
3.3
3.3
3.3
(mA)
43
43
4
43
43
4
38
38
3
34
34
3
Gain (1)
NF
PL (1dB)
OIP3
FL (2)
RLout
RLin
(dB)
10
10
-2
10
5
-2
10
10
-2
14
14
-2
(dB)
4.5
4.5
2.5
4.5
6
2.5
4
4
2.5
2.8
2.8
2.5
(dBm)
14
14
14
9
12
12
13
13
-
(dBm)
29
29
29
29
29
29
29
29
29
29
29
27
(dB)
-0.2
-0.2
-0.2
-0.2
-0.2
-0.2
-0.2
-0.2
-0.2
-0.2
-0.2
-0.2
(dB)
12
12
8
12
12
8
12
12
10
12
12
10
(dB)
18
18
8
18
17
8
21
21
10
20
20
9
LNAs for wireless infrastructures (50 Ω)
Type
Package
@ VCC
[typ]
(V)
@ ICC
[typ]
(mA)
BGU7051
SOT650-1
3.3
65
BGU7052
SOT650-1
3.3
80
BGU7053
SOT650-1
3.3
90
BGU7060
SOT1301AA
5
BGU7061
SOT1301AA
BGU7062
BGU7063
86
frange
[min]
(MHz)
500
750
900
1500
1850
1950
2300
2700
frange
[max]
(MHz)
750
850
1500
1750
1900
2500
2500
2800
200
700
800
5
200
800
950
SOT1301AA
5
185
1710
1785
SOT1301AA
5
190
230
1920
1980
NXP Semiconductors RF Manual 16th edition
Gass
[typ]
(dB)
23.5
21.5
21
21.5
20
19.7
18.5
17.5
3
12
18
35
3
12
18
35
3
12
18
35
18
35
NF
[typ]
(dB)
0.6
0.63
0.65
0.76
0.76
0.79
0.85
0.9
21
15
7.2
1
21
15
7.2
1
20.6
15
9.3
0.98
6.4
1.05
PL(1dB)
[typ]
(dBm)
17
16.5
16.5
15.5
14.5
14.5
13.5
13
11
7.5
-7
-12.5
11
7.5
-7
-12.5
10.7
5.4
-7
-12.8
-6.4
-12.5
IP3O
[typ]
(dBm)
32
32
33
37
35.5
35
36
36
25.5
22.5
4.5
2.5
25.5
22.5
4.5
2.5
25.6
21
3.4
1
5.4
0.9
RLin
[typ]
(dB)
27.5
26
24.5
23
23
22
23
26
20
20
20
24
20
20
20
24
23
23
23
26
35
31
RLout
[typ]
(dB)
18
17.5
18
22
22
21
19.5
23
19
19
19
19
19
19
19
19
16
16
16
16
15
15
@ VCC
@ ICC
Package
[typ]
(V)
[typ]
(mA)
Frequency
range
[min]
(MHz)
BGA6289
SOT89
4.1
84
100-3000
BGA6489
SOT89
5.1
78
100-3000
BGA6589
SOT89
4.8
81
100-3000
BGA7014*
SOT89
5
70
30-6000
BGA7017*
SOT89
5
87
30-6000
BGA7020*
SOT89
5
120
30-6000
BGA7024
SOT89
5
110
400 - 2700
BGA7027
SOT89
5
165
400 - 2700
BGA7124
SOT908
5
140
400 - 2700
BGA7127
SOT908
5
180
400 - 2700
BGA7130
SOT908
5
450
400 - 2700
Type
RF input
frequency
[max]
(MHz)
900
1800
900
1800
900
1800
2000
4000
2000
4000
2000
4000
940
1960
2140
2445
940
1960
2140
940
1960
2140
2445
940
1960
2140
2445
750
2140
Gain
PL(1dB)
IP3O
NF
[typ]
(dB)
15.0
13.0
20.0
16.0
22.0
17.0
12.0
13.5
12.0
13.5
13.0
14.0
22.0
16.0
15.0
14.0
19.0
11.5
11.0
23.0
16.5
16.0
14.0
20.0
13.0
12.0
10.5
18.0
10.0
[typ]
(dBm)
31.0
28.0
33.0
30.0
33.0
32.0
13.0
10.0
16.5
11.5
18.5
14.0
24.0
25.5
25.5
24.5
29.0
27.5
28.0
25.0
24.5
24.5
23.5
27.5
28.5
28.0
27.5
30.0
30.0
[typ]
(dBm)
17.0
15.0
20.0
17.0
21.0
20.0
26.0
20.5
29.0
23.0
33.0
26.0
37.5
38.0
38.0
37.5
41.5
43.0
42.5
38.5
38.0
37.5
36.0
41.5
42.5
42.0
41.5
43.0
44.0
[typ]
(dB)
3.5
3.7
3.1
3.3
3
3.3
6.2
6.0
6.4
6.3
6.5
6.2
2.9
3.7
3.7
4.0
2.6
3.8
3.9
5.2
4.6
4.8
5.4
3.1
4.5
4.6
4.7
5.0
5.0
Products by function
General-purpose medium power amplifiers
VGAs for wireless infrastructures
Type
Package
type
BGA7204
SOT617-3
single
BGA7210
SOT617-3
single
BGA7350
BGA7351
SOT617-1
SOT617-1
dual
dual
@ VCC
@ ICC
frange
frange
[typ]
(V)
5
5
5
5
5
5
5
5
5
5
5
[typ]
(mA)
115
115
115
115
185
185
185
185
185
245
280
[min]
(MHz)
400
700
1450
2100
700
1400
1700
2200
3400
50
50
[max]
(MHz)
700
1450
2100
2750
1400
1700
2200
2800
3800
250
250
Gp @ minimum
attenuation
Attenuation
range
(dB)
(dB)
18.5
18.5
17.5
16.5
30
29.5
29
28
26
18.5
22
31.5
31.5
30.5
30
31.5
31.5
31.5
30.5
29.5
24
28
Gain(1)
(dB)
23
@ 1900 MHz
DG(2)
P1dB
(dB)
(dBm)
56
13
ACPR
(dBc)
49
@ 1900 MHz
NF Gain(1) OIP3
(dB)
(dB) (dBm)
9
6
10
Vs
(V)
4
NF
PL(1dB)
IP3O
[typ]
(dB)
7
6.5
6.5
7
6.5
6.5
6.5
7
8
6
6
[typ]
(dBm)
21
21
20.5
20
21
21
21
23
19
17
16.5
[typ]
(dBm)
38
37.5
36
34
39
37
35
35
27
43
46
2-stage variable-gain linear amplifier
@
(1)
Type
Package
BGA2031/1
SOT363
Gain = GP, power gain
(2)
Vs
(V)
3
Is
(mA)
51
Frequency
Gain(1)
range
(dB)
800-2500
24
@ 900 MHz
DG(2)
P1dB
(dB)
(dBm)
62
11
ACPR
(dBc)
49
Vs
(V)
3.3
Limits
Is
(mA)
77
P tot
(mW)
200
DG = gain control range
Wideband linear mixer
@
(1)
Type
Package
BGA2022
SOT363
Gain = GP, power gain
(2)
Vs
(V)
3
Is
(mA)
6
RF input
Frequency
range
800 - 2500
IF output
Frequency
range
50 - 500
NF
(dB)
9
@ 880 MHz
Gain(1) OIP3
(dB) (dBm)
5
4
Limits
Is
(mA)
10
Ptot
(mW)
40
DG = gain control range
Bold = highly recommended product
Bold red = new, highly recommended product
* Check status in section 3.1, as this type is not yet released for mass production
NXP Semiconductors RF Manual 16th edition
87
3.4.2
Wireless infrastructure ICs
Low-noise PLL + VCO (LO generator) for wireless infrastructures
Type
Package
BGX7300*
SOT1092-2
@ VCC
@ ICC
fi(ref)
[typ]
[typ]
[min]
(V)
(mA)
(MHz)
3.3
150
VCO output RF output
frequency frequency
(MHz)
(MHz)
2200 - 2750
10 - 250 2750 - 3500
3500 - 4400
Normalized
phase noise
Phase noise
@ 1MHz
[max]
[max]
[max]
[typ]
(dBc/Hz)
(dBc/Hz)
deg
(dBm)
-225
-134 (2.2 GHz carrier)
-133 (3.0 GHz carrier)
-131 (4.2 GHz carrier)
0.24°
@ 2.1 GHz
-5 to +5
68 - 4400
Integrated RMS Programmable
phase error
output power
IQ modulators for wireless infrastructure
Type
Package
@ VCC
@ ICC
[typ]
[typ]
(V)
(mA)
BGX7100
SOT616-3
5
BGX7101
SOT616-3
5
flo
range
(MHz)
165
165
173
173
178
178
184
172
172
180
180
178
182
188
400 4000
400 4000
flo
(MHz)
750
910
1840
1960
2140
2650
3650
750
910
1840
1960
2140
2650
3650
Po
BWmod
Nflr(o) *
PL(1dB)
IP2O
IP3O
SBS
CF
[typ]
[typ]
[typ]
[typ]
[typ]
[typ]
[typ]
[typ]
(dBm)
(MHz)
(dBm/Hz)
(dBm)
(dBm)
(dBm)
(dBc)
(dBm)
-159/-158.5
-159/-158.5
-158.5/-158
-158.5/-158
-158.5/-158
-158/-158
-158/-158
-159/-158.5
-159/-158.5
-158.5/-158
-158.5/-158
-158.5/-158
-158/-158
-158/-158
11.5
11.5
11.5
11.5
11.5
11.5
11.5
12
12
12
12
12
12
12
71
72
69
72.5
74
62
60
71
75
71
72
75
65
65
29
29
27
27
27
26
25
28
28
27
27
27
26
25
55
49
47
49
51
60
53
63
49
55
57
63
50
57
-55
-55
-50
-48
-45
-45
-43
-51
-57
-50
-47
-45
-45
-42
-0.2
400
4
650
* Without modulation/with modulation
Dual mixers for wireless infrastructure
Type
@ VCC
@ ICC
RF input
frequency
RF input
frequency
Local
oscillator
frequency
Local
oscillator
frequency
Second-order
spurious
rejection
2RF-2LO
NFSSB
singlesideband
IP3i
Gconv
[typ]
[typ]
[min]
[max]
[min]
[max]
[max]
[typ]
[typ]
[typ]
(V)
(mA)
(MHz)
(MHz)
(MHz)
(MHz)
(dBc)
(dB)
(dBm)
(dB)
5
5
330
365
700
1400
950
2700
500
1500
1150
2500
-60
-60
10
10
26
25.5
8
8.5
Package
BGX7220
BGX7221
SOT1092-2
SOT1092-2
Bold red = new, highly recommended product
* Check status in section 3.1, as this type is not yet released for mass production
88
NXP Semiconductors RF Manual 16th edition
3.4.3
Satellite LNB RF ICs
Type
Package
TFF1014HN
TFF1015HN
TFF1017HN
TFF1018HN
3.4.4
SOT763-1
SOT763-1
SOT763-1
SOT763-1
Input freq
range
Vcc
I
Gconv
NF
OIP3
LO Freq
Integrated Phase noise
density (degrees RMS)
(V)
(mA)
(dB)
(dB)
(dB)
(GHz)
10.7 - 12.75
5
52
36
7
13
9.75 / 10.6
1.5
10.7 - 12.75
5
52
39
7
13
9.75 / 10.6
1.5
10.7 - 12.75
5
52
42
7
13
9.75 / 10.6
1.5
10.7 - 12.75
5
52
45
7
13
9.75 / 10.6
1.5
Low-noise LO generators for VSAT and general microwave applications
Why choose NXP’s low-noise LO generators:
` Lowest total cost of ownership
` Alignment-free concept
` Easy circuit design-in
` Improved LO stability
fIN(REF)
Type
TFF1003HN
TFF1007HN
VCC
ICC
PLL phase noise @ N=64,
@ 100 kHz
Typ
Typ
Max
Package
SOT616
SOT616
PLL
Output buffer
fo(RF)
Products by function
Low-noise LO generators for VSAT applications
Input
Po
RLout(RF)
Si
Typ
Max
Min
(dBm)
(MHz)
(V)
(mA)
(dBc/Hz)
(GHz)
(dBm)
(dB)
50 - 815
3.3
100
-92
12.8 - 13.05
-5
-10
-10
230.46 - 234.38
3.3
100
-104
14.62 - 15
-3
-10
-10
Low-noise LO generators for general microwave applications
Type
Package
fIN(REF)
VCC
ICC
Typ
(V)
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
Typ
(mA)
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
PLL phase noise @
N=64
@ 100 kHz @ 10 MHz
(dBc/Hz) (dBc/Hz)
-95
-131
-95
-131
-95
-131
-95
-131
-95
-131
-95
-131
-95
-131
-95
-131
-95
-131
-95
-131
-95
-131
-95
-131
-95
-131
-95
-131
-95
-131
-95
-131
-95
-131
-95
-131
-95
-131
Min
(GHz)
6.84
7.16
7.49
7.84
8.21
8.59
8.99
9.00
9.41
9.85
10.31
10.79
11.29
11.81
12.36
12.9
13.54
14.17
14.83
PLL
fo(RF)
Typ
(GHz)
7
7.33
7.67
8.02
8.4
8.79
9.2
9.4
9.63
10.07
10.54
11.03
11.55
12.09
12.65
13.2
13.85
14.5
15.18
(MHz)
TFF11070HN*
SOT616
27 - 448
TFF11073HN*
SOT616
28 - 468
TFF11077HN*
SOT616
29 - 490
TFF11080HN* SOT616
31 - 513
TFF11084HN* SOT616
32 - 537
TFF11088HN* SOT616
34 - 562
TFF11092HN*
SOT616
35 - 588
TFF11094HN*
SOT616
36-600
TFF11096HN*
SOT616
37 - 616
TFF11101HN*
SOT616 38 - 644
TFF11105HN*
SOT616
40 - 674
TFF11110HN*
SOT616
42 - 706
TFF11115HN*
SOT616
44 - 738
TFF11121HN*
SOT616
46 - 773
TFF11126HN*
SOT616 48 - 809
TFF11132HN*
SOT616
51 - 846
TFF11139HN*
SOT616
53 - 886
TFF11145HN*
SOT616
55 - 927
TFF11152HN*
SOT616
58 - 970
Bold = highly recommended product
* To be released on request, please consult your local NXP representative or authorized distributor
Max
(GHz)
7.16
7.49
7.84
8.21
8.59
8.99
9.41
9.6
9.85
10.31
10.79
11.29
11.81
12.36
12.94
13.5
14.17
14.83
15.52
Output buffer
Po
RLout(RF)
Typ
Max
(dBm)
(dB)
-5
-10
-5
-10
-5
-10
-5
-10
-5
-10
-5
-10
-5
-10
-5
-10
-5
-10
-5
-10
-5
-10
-5
-10
-5
-10
-5
-10
-5
-10
-5
-10
-5
-10
-5
-10
-5
-10
Input
Si
Min
(dBm)
-10
-10
-10
-10
-10
-10
-10
-10
-10
-10
-10
-10
-10
-10
-10
-10
-10
-10
-10
Frequency
band
C
C
C
C. X
X
X
X
X
X
X
Ku
Ku
Ku
Ku
Ku
Ku
Ka
Ka
Ka
NXP Semiconductors RF Manual 16th edition
89
3.5
3.5.1
RF MOS transistors
JFETs
JFET selection guide on www.nxp.com/rffets
Easy-to-use parametric filters help you choose the right junction
field effect transistor for your design.
Why choose NXP’s JFETs:
` Reliable volume supplier
` Short lead time
` Broad portfolio
N-channel junction field-effect transistors for switching
Type
Package
BSR56
BSR57
BSR58
PMBFJ108
PMBFJ109
PMBFJ110
PMBFJ111
PMBFJ112
PMBFJ113
PMBF4391
PMBF4392
PMBF4393
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
VDS
IG
(V)
max
40
40
40
25
25
25
40
40
40
40
40
40
(mA)
max
50
50
50
50
50
50
50
50
50
50
50
50
I DSS
(mA)
min
max
50
20
100
8
80
80
40
10
20
5
2
50
150
25
75
5
30
Vgsoff
(V)
min
max
4
10
2
6
0.8
4
3
10
2
6
0.5
4
3
10
1
5
0.5
3
4
10
2
5
0.5
3
CHARACTERISTICS
RDSON
C rs
(Ω)
(pF)
max
min
max
25
5
40
5
60
5
8
15
12
15
18
15
30
typ.3
50
typ.3
100
typ.3
30
3.5
60
3.5
100
3.5
t on
(ns)
typ
4
4
4
13
13
13
-
t off
(ns)
max
15
15
15
typ
6
6
6
35
35
35
-
max
25
50
100
20
35
50
P-channel junction field-effect transistors for switching
Type
Package
PMBFJ174
PMBFJ175
PMBFJ176
PMBFJ177
SOT23
SOT23
SOT23
SOT23
90
VDS
IG
(V)
max
30
30
30
30
(mA)
max
50
50
50
50
I DSS
(mA)
min
max
20
135
7
70
2
35
1.5
20
NXP Semiconductors RF Manual 16th edition
Vgsoff
(V)
min
max
5
10
3
6
1
4
0.8
2.25
CHARACTERISTICS
RDSON
C rs
(Ω)
(pF)
max
min
max
85
typ.4
125
typ.4
250
typ.4
300
typ.4
t on
(ns)
typ
7
15
35
45
t off
(ns)
max
-
typ
15
30
35
45
max
-
N-channel junction field-effect transistors for general RF applications
Package
VDS
IG
(V)
max
(mA)
max
I DSS
(mA)
min
max
CHARACTERISTICS
Vgsoff
|Yfs|
(V)
(mS)
min
max
min
max
DC, LF, and HF amplifiers
BF545A
SOT23
30
10
2
6.5
0.4
7.5
BF545B
SOT23
30
10
6
15
0.4
7.5
BF545C
SOT23
30
10
12
25
0.4
7.5
BF556A
SOT23
30
10
3
7
0.5
7.5
BF556B
SOT23
30
10
6
13
0.5
7.5
BF556C
SOT23
30
10
11
18
0.5
7.5
Pre-amplifiers for AM tuners in car radios
BF861A
SOT23
25
10
2
6.5
0.2
1.0
BF861B
SOT23
25
10
6
15
0.5
1.5
BF861C
SOT23
25
10
12
25
0.8
2
BF862
SOT23
20
10
10
25
0.3
2
RF stages FM portables, car radios, main radios & mixer stages
SOT23
20
10
0.7
3
typ. 0.8
BF510 (1)
SOT23
20
10
2.5
7
typ. 1.5
BF511(1)
SOT23
20
10
6
12
typ. 2.2
BF512(1)
SOT23
20
10
10
18
typ. 3
BF513 (1)
Low-level general-purpose amplifiers
BFR30
SOT23
25
5
4
10
<5
BFR31
SOT23
25
5
1
5
< 2.5
General-purpose amplifiers
BFT46
SOT23
25
5
0.2
1.5
< 1.2
AM input stages UHF/VHF amplifiers
PMBFJ308
SOT23
25
50
12
60
1
6.5
PMBFJ309
SOT23
25
50
12
30
1
4
PMBFJ310
SOT23
25
50
24
60
2
6.5
PMBFJ620
SOT363
25
50
24
60
2
6.5
(1)
C rs
(pF)
min
max
3
3
3
4.5
4.5
4.5
6.5
6.5
6.5
-
0.8
0.8
0.8
0.8
0.8
0.8
-
12
16
20
35
20
25
30
-
2.1
2.1
2.1
typ=1.9
2.7
2.7
2.7
-
0.4
0.4
0.4
0.4
0.5
0.5
0.5
0.5
1.5
1.5
-
>1
1.5
-
> 10
> 10
> 10
10
1.3
1.3
1.3
1.3
2.5
2.5
2.5
2.5
2.5
4
6
7
1
1.5
4
4.5
Products by function
Type
Asymmetrical
3.5.2
MOSFETs
RF MOSFET selection guide on www.nxp.com/rffets Easy-to-use parametric
filters help you choose the right RF MOSFET for your design.
Why choose NXP's MOSFETs:
` Reference designs for TV tuning
` Short lead time
` Broad portfolio
` Smallest packages
` 2-in-1 FETs for tuner applications
` Reliable volume supply
` Best performance MOSFETs for TV tuning
N-channel, single MOSFETs for switching
VDS
Type
Package
BSS83
SOT143
Silicon RF Switches
BF1107
SOT23
BF1108
SOT143B
BF1108R
SOT143R
BF1108W
SOT343
BF1108WR
SOT343R
BF1118
SOT143B
BF1118R
SOT143R
BF1118W
SOT343
BF1118WR
SOT343R
(V)
max
10
ID
(mA)
max
50
3
3
3
3
3
3
3
3
3
10
10
10
10
10
10
10
10
10
I DSS
(mA)
min
max
-
100
100
100
100
100
100
100
100
100
VGS(th)
(V)
min
max
0.1
2
-
7
7
7
7
7
7
7
7
7
RDSON
(Ω)
max
45
20
20
20
20
20
22
22
22
22
Characteristics
C rs
t on
(pF)
(ns)
min
max
typ
max
typ.0.6
1
-
-
-
-
t off
(ns)
typ
-
max
5
|S21(on)|2
(dB)
max
-
-
-
2.5
3
3
3
3
3
3
3
3
|S21(off)|2
(dB)
min
-
MODE
30
30
30
30
30
30
30
30
30
depl.
depl.
depl.
depl
depl
depl
depl
depl
depl
enh.
Bold = highly recommended product
NXP Semiconductors RF Manual 16th edition
91
N-channel, dual-gate MOSFETs
Type
Package
With external bias
BF908
SOT143
BF908R
SOT143R
BF908WR
SOT343R
BF991
SOT143
BF992
SOT143
BF994S
SOT143
BF996S
SOT143
BF998
SOT143
BF998R
SOT143R
BF998WR
SOT343R
Fully internal bias
BF1105
SOT143
BF1105R
SOT143R
BF1105WR
SOT343R
Partly internal bias
BF904A
SOT143
BF904AR
SOT143R
BF904AWR
SOT343R
BF909A
SOT143
BF909AR
SOT143R
BF909AWR
SOT343R
SOT363
BF1102(R)(4)
BF1201
SOT143
BF1201R
SOT143R
BF1201WR
SOT343R
BF1202
SOT143
BF1202R
SOT143R
BF1202WR
SOT343R
BF1203(5)
SOT363
BF1204(4)
SOT363
BF1206(5)
SOT363
BF1207(5)(7)(8)
SOT363
BF1208 (5)(6)(7)
SOT666
BF1208D
(5)(6)(7)
SOT666
BF1210 (5)(6)
SOT363
BF1211
BF1211R
BF1211WR
BF1212
BF1212R
BF1212WR
BF1214 (4)
SOT143
SOT143R
SOT343
SOT143
SOT143R
SOT343
SOT363
BF1218 (5)(6)(7)
SOT363
Characteristics
|Yfs|
C is
C os
(mS)
(pF)
(pF)
min
max
typ
typ
VDS
ID
(V)
max
(mA)
max
12
12
12
20
20
20
20
12
12
12
40
40
40
20
40
30
30
30
30
30
3
3
3
4
4
4
2
2
2
27
27
27
25
20
20
18
18
18
-
-2
-2
-2
-2.5
-1.3
-2.5
-2.5
-2.0
-2.0
-2.5
36
36
36
10
20
15
15
21
21
22
50
50
50
-
3.1
3.1
3.1
2.1
4
2.5
2.3
2.1
2.1
2.1
7
7
7
30
30
30
8
8
8
16
16
16
0.3
0.3
0.3
1.2
1.2
1.2
25
25
25
-
7
7
7
7
7
7
7
10
10
10
10
10
10
10
10
10
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
30
30
30
40
40
40
40
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
8
8
8
12
12
12
12
11
11
11
8
8
8
11
8
8
14
9
13
9
14
9
14
10
14
9
11
11
11
8
8
8
13
14
10
13
13
13
20
20
20
20
19
19
19
16
16
16
19
16
16
23
17
23
19
24
17
24
20
24
17
19
19
19
16
16
16
23
24
20
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
1
1
1
1
1
1
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.0
1.0
1.0
1.0
1
1
1
1
1
1
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1
1
22
22
22
36
36
36
36
23
23
23
25
25
25
23
25
25
33
29
25
26
26
28
26
25
26
28
25
25
25
28
28
28
25
26
25
30
30
30
50
50
50
35
35
35
40
40
40
35
40
40
48
44
40
41
41
43
41
40
41
43
40
40
40
43
43
43
35
41
40
I DSX
(mA)
min max
VGS(th)
(V)
min
max
F @ 800 MHz
(dB)
typ
VHF
1.7
1.7
1.7
1.1
2
1
0.8
1.05
1.05
1.05
1.5
1.5
1.5
1
1.2(1)
1(1)
1.8
1
1
1
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
2.2(3)
2.2(3)
2.2(3)
1.2(2)
1.2(2)
1.2(2)
1.7
1.7
1.7
X
X
X
X
X
X
2.2
2.2
2.2
3.6
3.6
3.6
2.8(3)
2.6
2.6
2.6
1.7
1.7
1.7
2.6
1.7
1.7
2.4
1.7
2.2
1.8
2.2
2
2.1
2.1
2.2
2
2.1
2.1
2.1
1.7
1.7
1.7
2.2
2.1
2.1
1.3
1.3
1.3
2.3
2.3
2.3
1.6(2)
0.9
0.9
0.9
0.85
0.85
0.85
0.9
0.85
0.85
1.1
0.85
0.9
0.8
0.9
0.85
0.8
0.85
0.9
0.85
0.9
0.9
0.9
0.9
0.9
0.9
0.9
0.8
0.85
2
2
2
2
2
2
2
1.9
1.9
1.9
1.1
1.1
1.1
1.9
1.1
1.1
1.6
1.4
1.4
1.4
1.4
1.4
1.1
1.4
1.4
1.4
1.3
1.3
1.3
1.1
1.1
1.1
1.4
1.1
1.4
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
-
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
UHF
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
@ 200 MHz
C OSS
C ig
Two equal dual gate
MOSFETs in one
package
Two low-noise gain
amplifiers in one
package
Transistor A: fully
internal bias, transistor
B: partly internal bias
Internal switching
function
Transistor A: partly
internal bias, transistor
B: fully internal bias
N-channel, dual-gate MOSFETs for set-top boxes
Characteristics
Package
Type
BF1215 (1)(2)(3)
SOT363
BF1216(1)
SOT363
BF1217
SOT343
VDS
ID
(V)
max
6
(mA)
max
30
30
30
30
30
6
(mA)
max
19.5
23
19.5
23
23
Two low-noise gain amplifiers in one package
Transistor A: fully internal bias, transistor B: partly internal bias
(3)
Internal switching function
Bold = highly recommended product
(1)
(2)
92
NXP Semiconductors RF Manual 16th edition
V(th)gs
IDSX
(V)
min
0.3
0.3
0.3
0.3
0.3
max
1
1
1
1
1
|Yfs|
Cis
COS
(mS)
typ
27
27
27
27
27
(pF)
typ
2.5
2.5
2.5
2.5
2.5
(pF)
typ
0.8
0.8
0.8
0.8
0.8
[email protected]
800 MHz
(dB)
typ
1.9
1.9
1.9
1.9
1.9
X-Mod @ 40 dB
gain reduction
(dB)
typ
107
107
107
107
107
3.6
RF modules
CATV module selection guide on www.nxp.com/catv
Easy-to-use parametric filters help you choose the right
CATV module for your design.
C-types (China)
` CATV push-pulls, section 3.6.2: BGY588C, BGE788C,
CGY888C
` CATV power doublers, section 3.6.3: BGD712C, CGD982HCi,
CGD985HCi, CGD987HCi
` CATV optical receivers, section 3.6.4: BGO807C, BGO807CE
CATV types for Chinese (C-types) and 1 GHz GaAs HFET
line-ups
The C-types are specially designed for the Chinese market,
customized for two major governmental projects. The GaAs
HFET family includes a complete 1 GHz line-up for high-end
applications around the world.
1 GHz GaAs HFET high-end hybrids
` CATV push-pulls, section 3.6.2 : CGY1032, CGY1041,
CGY1043, CGY1047, CGY1049
` CATV power doublers, section 3.6.3: CGD1040Hi,
CGD1042Hi, CGD1044Hi, CGD1046Hi, CGD1042H,
CGD1044H
3.6.1
CATV push-pulls
Type
BGY588C
BGY785A
BGE788C
BGY787
BGE787B
BGE885
BGX885N
BGY885A
BGY887
CGY888C
BGY835C
BGY887B
BGY888
3.6.2
Products by function
Why choose NXP’s RF modules:
` Excellent linearity, stability, and reliability
` Rugged construction
` Extremely low noise
` High power gain
` Low total cost of ownership
Frequency range
(MHz) (1)
Gain
(dB)
Slope
(dB)
FL
(dB) (2)
RLIN/RLOUT
(dB)
CTB
(dB) (3)
40-550
33.5 - 35.5
18 - 19
33.2 - 35.2
21 - 22
28.5 - 29.5
16.5 - 17.5
16.5 - 17.5
18 - 19
21 - 22
34.5 - 36.5
33.5 - 34.5
28.5 - 29.5
33.5 - 34.5
0.2 - 1.7
0-2
0.3 - 2.3
0 - 1.5
0.2 - 2.2
0.2 - 1.2
0.2 - 1.4
0-2
0.2 - 2
1.5
0.5 - 2.5
0.5 - 2.5
0.5 - 2.5
0.5
0.1
0.6
0.2
0.45
0.5
0.3
0.2
0.2
0.25
0.5
0.5
0.2
16 / 16
20 / 20
16 / 16
20 / 20
20 / 20
14 / 14
20 / 20
20 / 20
20 / 20
20 / 20
20 / 20
20 / 20
20 / 20
-57
-54.5
-49
-54.5
-48
40-750
40-870
-65
-64.5
-65
-60
-60
-63.5
X mod
(dB) (3)
-57.5
-54
-52
-65
-64.5
-72
-60
-63
CSO
(dB) (3)
@ Ch
@ Vo
(dBmV)
NF @ fmax
(dB)
Itot
(mA)
-62
-62
-52
-57.5
-56
77
110
110
110
110
44
44
44
44
44
-67
-67.5
-63
-55
-60
-64
49
49
112
49
49
49
44
44
44
44
44
44
8
6
8
5
6.5
8
8
6
5
4
7
6.5
5.5
345
225
325
220
340
240
240
225
220
280
340
340
325
CATV push-pulls 1 GHz
Frequency
range (MHz) (1)
RLIN/RLOUT CTB
FL
X mod
CSO
(dB) (1)
(dB) (3) (dB) (3) (dB) (3)
(dB)
@ Vo NF @ fmax
(dB)
(dBmV)
Itot
(mA)
Gain
(dB)
Slope
(dB)
CGY1041
21 - 22.5
1.2 - 2.7
0.9
20 / 18
-62
-58
-64
79 NTSC channels + 75 digital channels
44
4.3
CGY1043
23 - 24.5
1.2 - 2.7
0.9
20 / 18
-62
-58
-64
79 NTSC channels + 75 digital channels
44
4.2
265
CGY1047
27 - 28.5
1.5 - 2.5
0.8
20 / 18
-64
-60
-66
79 NTSC channels + 75 digital channels
44
4.5
250
Type
CGY1049
40 - 1003
@ Ch
265
29 - 31
0.85 - 2.35
0.85
20 / 18
-62
-58
-64
79 NTSC channels + 75 digital channels
44
4.5
265
CGY1032
32 - 34
1.05 - 2.55
0.85
20 / 18
-62
-58
-64
79 NTSC channels + 75 digital channels
44
4.4
265
BGY1085A
18 - 19
0-2
0.3
20 / 20
-53
-54
-56
150
40
7.5
240
Bold = highly recommended product
NXP Semiconductors RF Manual 16th edition
93
3.6.3
CATV power doublers
Frequency
range (MHz) (1)
Type
BGD712
BGD712C
BGD714
BGD812
BGD814
BGD816L
CGD942C
CGD944C
CGD1040HI
CGD1042HI
CGD1044HI
CGD1046HI
CGD1042H
CGD1044H
CGD982HCI
CGD985HCI
CGD987HCI
3.6.4
BGO807C
BGO807CE
Type
BGY68
BGY66B
BGY67
BGY67A
BGR269
40 - 870
40 - 1003
Slope
(dB)
FL
(dB) (1)
18.2 - 18.8
18.2 - 18.8
20 - 20.6
18.2 - 18.8
19.7 - 20.3
21.2 - 21.8
22 - 24
24 - 26
19.5 - 22
22 - 23.5
23.5 - 25.5
26.5 - 28
22 - 24
24 - 26
22 - 24
23.5 - 25.5
26 - 28
0.5 - 1.5
0.5 - 1.5
0.5 - 1.5
0.4 - 1.4
0.5 - 1.5
0.5 - 1.5
1-2
1-2
0.5 - 2
0.5 - 2
0.5 - 2
0.7 - 2.2
1.5
1
0.5 - 2
0.5 - 2
0.7 - 2
0.35
0.35
0.35
0.5
0.5
0.5
0.5
0.5
1
1
1
1
0.5
0.5
1
1
1
RLIN/RLOUT
CTB (dB) (3)
(dB)
17 / 17
17 / 17
23 / 23
25 / 23
25 / 24
22 / 25
20 / 20
20 / 20
20 / 20
20 / 20
20 / 20
20 / 20
20 / 21
20 / 21
20 / 20
20 / 20
20 / 20
X mod
(dB) (3)
-62
-62
-61
-57
-56
-55
-66
-66
-70
-70
-70
-75
-75
-75
-66
-66
-66
-63
-62
-62
-61
-58
-66
-66
-66
-65
-64
-68
-67
-67
-68
-68
-68
CSO (dB) (3)
@ Ch
@ Vo
(dBmV)
NF @ fmax
(dB)
Itot
(mA)
-63
-63
-62
-58
-57
-56
-66
-66
-76
-75
-75
-70
-76
-76
-69
-69
-66
112
112
112
132
132
132
98
98
79
79
79
79
79
79
98
98
98
44
44
44
44
44
44
48
48
58.4
58.4
58.4
56.4
59
59
48
48
48
7
7
7
7.5
7.5
7.5
3.5
3.5
5.5
5.5
5
5
5
5
5.5
5
5
395
410
395
395
395
360
450
450
440
440
440
450
450
450
440
440
440
CATV optical receivers
Type
3.6.5
40 - 750
Gain
(dB)
Frequency
range (MHz) (1)
S
(V/W) (4)
Slope
(dB)
FL
(dB) (1)
RLOUT
(dB)
IMD3
(dB) (3)
IMD2
(dB) (3)
@ fmeasured
(MHz)
@ Pi(opt)
(mW)
NF @ fmax
(dB)
Itot
(mA)
Connectors
40 - 870
750
750
0-2
0-2
1
1
11
11
-71
-69
-55
-53
854.5
854.5
1
1
8.5
8.5
205
205
FC and SC
FC and SC
CSO
(dB) (3)
@ Ch
@ Vo
(dBmV)
NF @ fmax
(dB)
Itot
(mA)
4
14
22
22
28
50
48
50
50
50
3.5
5
5.5
5.5
5.5
135
135
215
215
160
CATV reverse hybrids
Frequency
range (MHz)(1)
Gain
(dB)
Slope
(dB)
FL
(dB) (1)
RLIN/RLOUT
(dB)
CTB
(dB) (3)
X mod
(dB) (3)
5 - 75
5 - 120
29.2 - 30.8
24.5 - 25.5
21.5 - 22.5
23.5 - 24.5
34.5 - 35.5
-0.2 - 0.5
-0.2 - 0.5
-0.2 - 0.5
-0.2 - 0.5
-0.2 - 0.6
0.2
0.2
0.2
0.2
0.5
20 / 20
20 / 20
20 / 20
20 / 20
20 / 20
-68
-66
-67
-67
-57
-60
-54
-60
-59
-50
5 - 200
-66
Bold = highly recommended product
Frequency range: minimum and maximum frequency in MHz at which data are characterized (@ Ch / @ Vo)
FL is flatness of frequency response
(3)
The number of channels and the output voltage at which CTB, Xmod, CSO, IMD2, and IMD3 are characterized, are @ fmax
(4)
S is minimum responsivity of optical receivers
(1)
(2)
94
NXP Semiconductors RF Manual 16th edition
3.7
RF power transistors
NEW : RF power transistor selection guide on www.nxp.com/rfpower
Easy-to-use parametric filters help you choose the right RF
power transistor for your design.
3.7.1
RF power transistors for base stations
Device naming conventions RF power transistors for base stations
22 L S
-45 P R B N G V
video bandwidth enhanced
gullwing-shaped leads
specialty
option: current sense lead
enhanced ruggedness
push-pull device
P1dB power
option: earless package
option: low thermal resistivity
operating frequency (in 100MHz; maximum)
G: standard LDMOS
LDMOS technology generation
F: LDMOS transistor in ceramic package
C: LDMOS transistor in air cavity plastic (ACP) package
D: fully integrated Doherty amplifier
M: MMIC module
L: high frequency power transistor
B: semiconductor die made of Si
Products by function
B L F 6 G
Why choose NXP‘s RF power transistors for base stations:
` Leading technology (generations 6, 7, and 8 of LDMOS)
` Highest efficiency
` Best ruggedness
` Advanced Doherty amplifier designs
` Very broad band (video bandwidth enhanced) devices
` Industry’s first 3.8 GHz Doherty
` Industry's first three-way, 900 MHz Doherty
` Industry's first 50 V, 600 W, single-package Doherty
NXP offers complete line-ups of RF power transistors operating from 800 MHz right up to 3.8 GHz for base stations,
covering all cellular technologies [MC-GSM/EDGE, TDMA, (TD-S)CDMA, W-CDMA/UMTS, LTE] and WiMAX infrastructures.
3.7.1.1
0.7 - 1.0 GHz line-up
Test signal performance
Type
BLP7G22-10*
BLM6G10-30(G)
BLF6G10L-40BRN
BLF6G10(S)-45
BLP7G07S-140P(G)*
BLF8G10L(S)-300P*
BLF8G10L(S)-160
BLF7G10L(S)-250
BLF6G10(LS)-200RN
BLF6G10(LS)-135RN
BLF6H10L(S)-160
BLF6G10(LS)-160RN
BLF8G10L(S)-160V*
BLF8G10LS-200GV*
BLF6G10L(S)-260PRN
BLF8G10LS-270GV*
BLF8G10LS-400PGV*
BLP7G09S-140P(G)*
Product
Driver
MMIC
Driver/final
Final
fmin
(MHz)
fmax
(MHz)
P1dB
(W)
700
920
700
700
700
850
920
920
688
700
700
700
700
700
700
700
700
900
2200
960
1000
1000
900
960
960
960
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
10
30
40
45
140
300
160
250
200
135
160
160
160
200
260
270
400
140
Matching
VDS
(V)
PL
(W)
BO
(dB)
ηD
(%)
Gp
(dB)
Test signal
Package
I/O
I
I
O
I/O
I/O
I/O
I
I
I
I/O
I/O
I
I/O
I/O
O
28
28
28
28
28
28
30
30
28
28
50
32
30
28
28
28
28
28
2
2
2.5
1
35
60
35
60
40
26.5
45
32
35
45
40
56
79
35
7.0
11.8
12.0
16.5
6.0
7.0
6.6
6.2
7.0
7.1
5.5
7.0
6.6
6.5
8.1
6.8
7.0
6.0
26
11.5
15
8
28
30
29
30.5
28.5
28
30
27
28
28
26.5
28
27
28
17
29
23
23
19
19
19.7
19.5
20
21
20
22.5
30
19.3
22
19.6
19.4
19
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
SOT1179
SOT822
SOT1112A
SOT608
SOT1224
SOT539
SOT502
SOT502
SOT502
SOT502
SOT467
SOT502
SOT1244
SOT1244C
SOT539
SOT1244C
SOT1242C
SOT1224
Bold red = new, highly recommended product
* Check status in section 3.1, as this type is not yet released for mass production
NXP Semiconductors RF Manual 16th edition
95
3.7.1.2
1.4 - 1.7 GHz line-up
Test signal performance
Type
Product
BLF6G21-10G
BLP7G22-10
BLF6G15L-40BRN
BLF6G15L(S)-40RN*
BLF7G15LS-200
BLF6G15L-250PBRN
BLF7G15LS-300P
3.7.1.3
Driver
Driver/final
Final
Product
BLF6G21-10G
Driver
BLP7G22-10
BLF6G20(S)-45
Driver/final
BLF7G20L(S)-90P
BLF6G20(LS)-75
BLF6G20(LS)-110
BLF6G20LS-140
BLF7G20LS-140P
BLF6G20(LS)-180RN
Final
BLF8G20L(S)-200V*
BLF6G20S-230PRN
BLF7G20LS-260A*
BLF8G20LS-270GV*
BLF8G20LS-270PGV*
BLF7G20L(S)-200
BLF7G20L(S)-250P
Integrated
BLD6G21L(S)-50
Doherty
P1dB
(W)
1
700
1450
1450
1450
1450
1450
2200
2200
1550
1550
1550
1550
1550
10
10
40
40
200
250
300
Matching
VDS
(V)
PL
(W)
BO
(dB)
I/O
I/O
I/O
I/O
I/O
28
28
28
28
28
28
28
0.7
2
2.5
2.5
50
60
85
11.5
7.0
12.0
12.0
6.0
6.2
5.5
VDS
(V)
28
28
28
28
28
28
28
28
30
28
28
28
28
28
28
28
PL
(W)
0.7
2
2.5
40
29.5
25
35.5
60
40
55
65
50
50
56
55
70
BO
(dB)
11.5
7.0
12.6
3.5
4.1
6.4
6.0
3.7
6.5
5.6
5.5
7.2
7.3
6.8
5.6
5.5
ηD
(%)
15
26
14
41
37.5
32
30
41
27
33
32
44
25
28
33
35
Gp
(dB)
18.5
17
19.2
19.5
19
19
16.5
17.5
17.2
17.5
17.5
15.5
17.8
19.4
18
18
Test signal
Package
2-c WCDMA
2-c WCDMA
2-c WCDMA
GSM EDGE
GSM EDGE
2-c WCDMA
2-c WCDMA
GSM EDGE
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
SOT538A
SOT1179
SOT608
SOT1121
SOT502
SOT502
SOT502B
SOT1121B
SOT502
SOT1120
SOT539B
SOT539B
SOT1244C
SOT1242C
SOT502
SOT539
28
8
8.0
43
14.5
TD-SCDMA
SOT1130
Product
VDS
(V)
28
28
26
26
28
28
28
28
28
28
28
28
28
28
28
28
28
32
32
30
28
28
28
28
28
PL
(W)
0.7
2
6
30
13.5
2.5
2.5
2
3.2
45
45
17
25
20
30
30
43
55
50
40
48
50
50
55
70
BO
(dB)
11.5
7.0
0.0
0.0
4.7
12.0
12.6
11.8
12.7
5.5
5.5
6.4
6.0
7.0
6.4
6.4
5.7
4.6
5.6
6.5
6.2
7.3
9.0
5.6
5.5
ηD
(%)
15
26
39
35
30
16
13
9
10
34
34
30.5
29
28.5
28.5
32
30
30
27.5
25
28
26
26
31
31
Gp
(dB)
18.5
17
15.5
13.5
19
19
18.5
29.5
30
18
18
18.7
18.5
19.1
17
18.5
18
18.5
17.5
16
20.2
17.8
18
18.5
18.5
Test signal
Package
BLF6G21-10G
BLP7G22-10*
Driver
BLF3G21-6
BLF3G21-30
BLF6G22L(S)-40P
BLF6G22L-40BN
Driver/final
BLF6G22(S)-45
BLM6G22-30(G)
MMIC
BLM7G22S-60PB(G)*
BLF7G21LS-160
BLF7G21L(S)-160P
BLF6G22LS-75
BLF6G22LS-100
BLF7G22L(S)-100P
BLF6G22LS-130
BLF7G22L(S)-130
BLF7G22L(S)-160
Final
BLF8G22LS-160BV*
BLF6G22(LS)-180PN
BLF6G22(LS)-180RN
BLF8G22LS-200GV*
BLF8G22LS-270GV*
BLF8G22LS-400PGV*
BLF7G22L(S)-200
BLF7G22L(S)-250P
Integrated
BLD6G22L(S)-50
Doherty
2-c WCDMA
2-c WCDMA
CW
CW
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
SOT538A
SOT1179
SOT538A
SOT467C
SOT1121
SOT1112A
SOT608
SOT822
SOT1212
SOT1121B
SOT1121
SOT502B
SOT502B
SOT1121B
SOT502B
SOT502
SOT502B
SOT1120B
SOT539
SOT502
SOT1244C
SOT1244C
SOT1242C
SOT502
SOT539
28
8
8.0
40
14
TD-SCDMA
SOT1130
PL
(W)
BO
(dB)
2
20
30
30
60
7.0
7.0
6.7
7.3
5.2
ηD
(%)
15
26
13
13
29
33
31
Gp
(dB)
Test signal
Package
18.5
17
22
21.5
19.5
18.5
18
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
SOT538A
SOT1179
SOT1112A
SOT1135
SOT502B
SOT1110A
SOT539B
Test signal performance
fmin
(MHz)
1
700
1800
1427
1800
1800
1800
1800
1800
1800
1800
1800
1800
1800
1805
1805
fmax
(MHz)
2200
2200
2000
2170
2000
2000
2000
2000
2000
2000
2000
1900
2000
2000
1990
1880
2010
2025
P1dB
Matching
(W)
10
10
45
I/O
90
I/O
75
I/O
110
I/O
140
I/O
140
I/O
180
I/O
200
I/O
230
I/O
260
I/O
270
I/O
270
I/O
200
I/O
250
I/O
50
O
2.0 - 2.2 GHz line-up
Type
3.7.1.5
fmax
(MHz)
1.8 - 2.0 GHz line-up
Type
3.7.1.4
fmin
(MHz)
Test signal performance
fmin
(MHz)
1
700
1800
1800
2110
2000
2000
2100
2000
1800
1800
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2110
2110
fmax
(MHz)
2200
2200
2200
2200
2170
2200
2200
2200
2200
2050
2050
2200
2200
2200
2200
2200
2200
2200
2200
2200
2200
2200
2200
2170
2170
P1dB
Matching
(W)
10
10
6
30
40
I/O
40
I/O
45
I/O
30
I/O
60
I/O
160
I/O
160
I/O
75
I/O
100
I/O
100
I/O
130
I/O
130
I/O
160
I/O
160
I/O
180
I/O
180
I/O
200
I/O
270
I/O
400
I/O
200
I/O
250
I/O
2110
2170
50
fmin
(MHz)
fmax
(MHz)
P1dB
(W)
Matching
VDS
(V)
2300
2300
2300
2300
2300
2700
2400
2400
2400
2400
10
100
140
160
200
I
I/O
I/O
I/O
I/O
28
28
28
28
28
I/O
2.3 - 2.4 GHz line-up
Test signal performance
Type
Product
BLF6G27-10(G)
BLF7G24L(S)-100
BLF7G24L(S)-140
BLF7G24L(S)-160P*
BLF8G24L(S)-200P*
Driver
Final
Bold red = new, highly recommended product
* Check status in section 3.1, as this type is not yet released for mass production
96
NXP Semiconductors RF Manual 16th edition
ηD
(%)
20
27
26.5
27.5
30
Gp
(dB)
Test signal
Package
19
18
18.5
18.5
16.5
N-CDMA/IS95
N-CDMA/IS95
N-CDMA/IS95
N-CDMA/IS95
1-c WCDMA
SOT975
SOT502
SOT502
SOT539
SOT539
2.5 - 2.7 GHz line-up
Type
Product
BLF6G27-10(G)
Driver
BLF6G27L(S)-40P
BLF6G27(S)-45
Driver/final
BLF6G27L(S)-50BN
BLF7G27L(S)-75P
BLF6G27(LS)-75
BLF7G27L(S)-90P
BLF7G27LS-90PG*
BLF6G27(LS)-100
BLF7G27L(S)-100
BLF6G27(LS)-135
BLF7G27L(S)-140
Final
BLF8G27LS-140
BLF8G27LS-140G*
BLF7G27L(S)-150P
BLF8G27LS-200PGV*
BLF8G27LS-280PGV*
BLF8G27LS-140V*
BLF7G27L-200PB
3.7.1.7
Test signal performance
fmax
(MHz)
2700
2700
2700
2700
2700
2700
2700
2700
2700
2700
2700
2700
2700
2700
2700
2700
2700
2700
2700
P1dB
Matching
(W)
10
I
40
I/O
45
I/O
50
I/O
75
I/O
75
I/O
90
I/O
90
I/O
100
I/O
100
I/O
135
I/O
140
I/O
140
I/O
140
I/O
150
I/O
200
I/O
280
I/O
140
I/O
200
I/O
VDS
(V)
28
28
28
28
28
28
28
28
28
28
32
28
28
28
28
28
28
32
32
PL
(W)
2
20
7
3
12
9
16
16
14
25
20
30
50
50
30
32
50
45
65
BO
(dB)
7.0
3.0
8.1
12.2
8.0
9.2
7.5
7.5
8.5
6.0
8.3
6.7
4.5
4.5
7.0
8.0
7.5
4.9
4.9
VDS
(V)
28
28
28
28
PL
(W)
2
4.5
9
18.5
BO
(dB)
7.0
7.4
7.4
7.3
3.5 - 3.8 GHz line-up
Type
Product
BLF6G38-10(G)
BLF6G38(S)-25
BLF6G38(LS)-50
BLF6G38(LS)-100
3.7.1.8
fmin
(MHz)
2300
2500
2500
2500
2300
2500
2500
2500
2500
2500
2500
2500
2500
2500
2500
2500
2500
2600
2600
Driver
Driver/final
Final
fmin
(MHz)
3400
3400
3400
3400
fmax
(MHz)
3600
3800
3800
3600
P1dB
(W)
10
25
50
100
Matching
I/O
I/O
I/O
I/O
ηD
(%)
20
37
24
14.5
26
23
29
27.5
23
28
22.5
22
31
31
26
23
21
30
29
Gp
(dB)
19
17.5
18
16.5
17
17
18.5
17.5
17
18
16
16.5
18
18
16.5
17
16.4
16.5
16.5
Test signal
Package
N-CDMA/IS95
1-c WCDMA
N-CDMA/IS95
2-c WCDMA
N-CDMA/IS95
N-CDMA/IS95
N-CDMA/IS95
N-CDMA/IS95
1-c WCDMA
N-CDMA/IS95
N-CDMA/IS95
N-CDMA/IS95
2-c WCDMA
2-c WCDMA
N-CDMA/IS95
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
SOT975
SOT1121
SOT608
SOT1112
SOT1121
SOT502
SOT1121
SOT1121C
SOT502
SOT502
SOT502
SOT502
SOT502B
SOT502E
SOT539
SOT1242C
SOT1242C
SOT1244B
SOT1110A
Test signal performance
Gp
ηD
Test signal
(dB)
(%)
20
14
N-CDMA/IS95
24
15
N-CDMA/IS95
23
14
N-CDMA/IS95
21.5
13
N-CDMA/IS95
Package
SOT975
SOT608
SOT502
SOT502
Power LDMOS Doherty designs
PPEAK
(dBm)
POUT-AVG
(dBm)
VDS
(V)
Gain
(dB)
Drain efficiency
(%)
Type
Main transistor
Peak transistor
55.5
57.2
58
47
49.5
50
28
32
32
19
20
20.5
42
42
47
SYM
SYM
SYM
1/2 BLF6G10L(S)-260PRN
BLF6G10LS-200RN
BLF6G10LS-200RN
1/2 BLF6G10L(S)-260PRN
BLF6G10LS-200RN
BLF6G10LS-200RN
46
52
52.7
54.7
55.1
56.2
56.6
57
57.1
57.1
57.2
57.3
57.5
38
44
44.5
47.5
47.1
48
50
49.2
49
49
49.3
49.3
50.8
28
28
28
28
28
28
30
28
30
28
28
30
30
24
20
15
17.3
20.5
18.5
18.8
15.8
16.1
15
16.5
16
18
51
48
50
48
44
40
44.5
48
46.7
48
49.5
50
48.8
SYM
SYM
3-WAY
SYM
SYM
SYM
SYM
SYM
ASYM
3-WAY
SYM
ASYM
ASYM
BLF6G21-10G
BLF6G10S-45
BLF6G10S-45
BLF6G10LS-135RN
1/2 BLF6G10L(S)-260PRN
BLF6G10LS-135RN
BLF6G10LS-200RN
BLF7G10LS-250
BLF8G10LS-160
BLF8G10LS-160
BLF7G10LS-250
BLF8G10LS-160
BLF6G10LS-200RN
BLF6G21-10G
BLF6G10S-45
2x BLF6G10S-45
BLF6G10LS-135RN
1/2 BLF6G10L(S)-260PRN
BLF6G10LS-135RN
BLF6G10LS-200RN
BLF7G10LS-250
BLF7G10LS-250
2x BLF8G10LS-160
BLF7G10LS-250
BLF7G10LS-250
BLF7G10LS-250
925-960
57.7
869-894
57.9
869-894
58
869-894
58.9
925-960
58.9
869-894
59.2
1476-1555 MHz
1526-1555
56.6
1476-1511
58.1
1476-1511
58.6
1805-1880 MHz (DCS)
1805-1880
48
1805-1880
50
1805-1880
52.5
1845-1880
52.6
1805-1880
54
1805-1880
55
1805-1880
55.4
1805-1880
55.5
1805-1880
56.1
1805-1880
56.5
49.7
52
50
52
50.9
50.4
28
28
32
28
32
28
20.5
18.2
20.5
16.1
22
16
40
50.1
46
49.1
47
52
SYM / MPPM
SYM / MMPP
SYM
ASYM
SYM / MMPP
3-WAY
BLF6G10L(S)-260PRN
BLF6G10LS-260PRN
BLF6G10-200RN
BLF6G10LS-200RN
BLF6G10L(S)-260PRN
BLF7G10LS-250
BLF6G10L(S)-260PRN
BLF6G10LS-260PRN
BLF6G10-200RN
2x BLF7G10LS-250
BLF6G10L(S)-260PRN
2x BLF7G10LS-250
48.6
49.6
50.6
28
28
32
18.4
16
16.5
42
42
42
SYM
ASYM
SYM
BLF7G15LS-200
BLF7G15LS-200
BLF6G15LS-250PBRN
BLF7G15LS-200
BLF7G15LS-300P
BLF6G15LS-250PBRN
40
42.8
44.5
45
47
49
47.5
47
48.1
49
28
28
28
28
28
28
31
28
30
28
15.4
15.8
16
14.5
16
15.5
16.3
16
15.2
32
42.4
48
44
46.5
49
47
49
41
48
45.5
SYM
SYM
SYM
SYM
SYM
SYM
ASYM
SYM
ASYM
ASYM
1/2 BLF6G22LS-40P
1/2 BLF7G20LS-90P
1/2 BLF7G21LS-160P
1/2 BLF7G21LS-160P
BLF6G20LS-110
BLF7G21LS-160P
BLF7G20LS-90P
1/2 BLF7G20L(S)-250P
BLF7G20LS-90P
BLF6G21-10G
1/2 BLF6G22LS-40P
1/2 BLF7G20LS-90P
1/2 BLF7G21LS-160P
1/2 BLF7G21LS-160P
BLF6G20LS-110
BLF7G21LS-160P
BLF7G21LS-160P
1/2 BLF7G20L(S)-250P
BLF7G20LS-200
BLF7G20LS-200
Freq band (MHz)
728-821 MHz
790-821
790-821
728-768
869-960 MHz
920-960
869-894
869-894
920-960
920-960
920-960
920-960
920-960
920-960
920-960
869-894
920-960
869-894
Bold red = new, highly recommended product
* Check status in section 3.1, as this type is not yet released for mass production
NXP Semiconductors RF Manual 16th edition
97
Products by function
3.7.1.6
PPEAK
(dBm)
1805-1880
57.1
1805-1880
57.5
1805-1880
57.5
1805-1880
57.8
1805-1880
57.9
1805-1880
58.2
1805-1880
58.6
1805-1880
58.7
1930-1990 MHz (PCS)
1930-1990
53
1930-1990
54.3
1930-1990
55.2
1930-1990
55.5
1930-1990
55.7
1930-1990
56
1930-1990
56
1930-1990
57
1930-1990
57
Freq band (MHz)
POUT-AVG
(dBm)
49
49.5
50.5
50.4
50
50
51
51
VDS
(V)
28
30
28
30
32
28
28
30
Gain
(dB)
14.3
16
14
16
15.5
16
16
15.8
Drain efficiency
(%)
45.1
42
48
41.5
37
42
47.6
47
Type
Main transistor
Peak transistor
3-WAY
SYM
ASYM
SYM
SYM / MMPP
SYM MPPM
3-WAY
3-WAY
BLF7G21LS-160P
BLF7G20LS-200
BLF7G20LS-200
BLF7G20LS-250P
BLF6G20-230PRN
BLF7G20LS-250P
BLF7G20LS-200
BLF7G20LS-200
2x BLF7G21LS-160P
BLF7G20LS-200
BLF7G20LS-250P
BLF7G20LS-250P
BLF6G20-230PRN
BLF7G20LS-250P
2x BLF7G20LS-200
2x BLF7G20LS-200
45
47.4
47.2
47.5
49
48
48
49
49.5
28
28
28
28
28
31
28
30
28
16.5
16.7
16
14.5
14.5
15.3
14.8
17.2
15.1
40
48.2
40
46
48
38
45
41
46
SYM
SYM
SYM
ASYM
ASYM
SYM
ASYM
SYM
ASYM
BLF6G20-75
BLF6G20LS-110
1/2 BLF7G20LS-250P
BLF7G20LS-90P
BLF7G21LS-160P
BLF6G20LS-140
BLF7G20LS-140P
BLF7G20LS-200
BLF7G21LS-160P
BLF6G20-75
BLF6G20LS-110
1/2 BLF7G20LS-250P
BLF7G20LS-200
BLF7G20LS-200
BLF6G20LS-140
BLF7G20LS-200
BLF7G20LS-200
2x BLF7G21LS-160P
50
49.1
50.5
28
28
30
16
32
15.7
40
42.3
43
SYM
ASYM
3-WAY
BLF7G20LS-250P
BLF6G21-10G
BLF7G20LS-200
BLF7G20LS-250P
BLF7G20LS-200
2x BLF7G20LS-200
39
42
42
44.5
44
44.5
28
28
28
28
28
28
14.4
17
17.2
15.2
15.6
16
41
46
47.2
41.5
43
44
SYM
SYM
SYM
SYM
SYM
SYM
BLD6G21L(S)-50
1/2 BLF7G20L(S)-90P
1/2 BLF7G20L(S)-90P
1/2 BLF7G21LS-160P
1/2 BLF7G21LS-160P
1/2 BLF7G21LS-160P
BLD6G21L(S)-50
1/2 BLF7G20L(S)-90P
1/2 BLF7G20L(S)-90P
1/2 BLF7G21LS-160P
1/2 BLF7G21LS-160P
1/2 BLF7G21LS-160P
39
40
40.5
46.5
47
47
47
46.4
49
47.9
48
48.5
49
49.2
50
28
28
28
28
28
28
28
28
28
28
28
28
28
28
32
13
17
17.2
16.5
17
17
15.5
15
14.5
17.3
15
16.2
14.2
16
17.5
38
44
46
43
43
43
38
43
47
42
48
41
46
47
40
SYM
SYM
SYM
SYM
SYM
SYM
SYM
ASYM
ASYM
SYM
3-WAY
SYM
ASYM
3-WAY
SYM
BLD6G22L(S)-50
1/2 BLF6G22LS-40P
1/2 BLF6G22L-40P
BLF6G22LS-100
BLF7G22L(S)-130
1/2 BLF7G22LS-250P
BLF6G22L(S)-130
BLF7G22L(S)-130
BLF7G22LS-130
BLF7G22LS-160
BLF7G22L(S)-130
BLF7G22L(S)-200
BLF7G22LS-160
BLF7G22LS-160
BLF7G22LS-250P
BLD6G22L(S)-50
1/2 BLF6G22LS-40P
1/2 BLF6G22L-40P
BLF6G22LS-100
BLF7G22L(S)-130
1/2 BLF7G22LS-250P
BLF6G22L(S)-130
BLF7G22L(S)-200
BLF7G22LS-200
BLF7G22LS-160
2x BLF7G22L(S)-130
BLF7G22L(S)-200
BLF7G22LS-200
2x BLF7G22L(S)-160
BLF7G22LS-250P
42
45
47
47.5
48.5
48.5
28
28
28
28
30
30
14.6
15
15.5
15.2
15
15
44
42.3
45
44
40
42
SYM
SYM
SYM
ASYM
SYM
3-WAY
1/2 BLF7G27L(S)-75P
1/2 BLF7G24LS-160P
BLF7G24LS-100
BLF7G24LS-100
BLF7G24LS-140
BLF7G24LS-100
1/2 BLF7G27L(S)-75P
1/2 BLF7G24LS-160P
BLF7G24LS-100
BLF7G24LS-140
BLF7G24LS-140
2x BLF7G24LS-100
39
40
40
42
42
42.3
44
44
44
44.5
47
47.2
47.3
47
28
28
28
28
28
28
28
28
28
28
28
30
28
28
14.6
14.4
14.6
15
15
14.5
14
14
14
14
15.2
15
15
15
46.2
41
44
43
37.5
39
40
40
40
38
43
41
41
40.4
ASYM
SYM
SYM
SYM
SYM
SYM
3-WAY
3-WAY
ASYM
SYM
SYM
ASYM
ASYM
ASYM
BLF6G27-10G
1/2 BLF6G27LS-40P
1/2 BLF6G27LS-40P
1/2 BLF7G27L(S)-75P
BLF6G27S-45
1/2 BLF7G27LS-90P
BLF6G27-45
BLF6G27-45
BLF6G27-45
1/2 BLF7G27LS-150P
BLF7G27LS-100
BLF7G27LS-100
BLF7G27LS-100
BLF7G27LS-100
1/2 BLF6G27LS-40P
1/2 BLF6G27LS-40P
1/2 BLF6G27LS-40P
1/2 BLF7G27L(S)-75P
BLF6G27S-45
1/2 BLF7G27LS-90P
2x BLF6G27-45
2x BLF6G27-45
BLF6G27(LS)-100
1/2 BLF7G27LS-150P
BLF7G27LS-100
BLF7G27LS-140
BLF7G27LS-140
BLF7G27LS-140
43
45
28
28
11.5
10
32
30
SYM
ASYM
BLF6G38-50
BLF6G38LS-50
BLF6G38-50
BLF6G38LS-100
1930-1990
58.2
1930-1990
56.8
1930-1990
58.5
1805-2025 MHz (TD-SCDMA)
2010-2025
47
1880-2025
50
2010-2025
50
1805-2050
52
2010-2025
52.2
1880-1920
52.5
2110-2170 MHz (UMTS / LTE)
2110-2170
47
2110-2170
48.3
2110-2170
48.5
2110-2170
54.7
2110-2170
54.9
2110-2170
55
2110-2170
55
2110-2170
55.5
2110-2170
55.7
2110-2170
55.9
2110-2170
56
2110-2170
56.5
2110-2170
56.5
2110-2170
57.2
2110-2170
58
2300-2400 MHz (WiBRO / LTE)
2300-2400
49.5
2300-2400
53
2300-2400
54.1
2300-2400
55
2300-2400
56.2
2300-2400
56.8
2500-2700 MHz (WiMAX / LTE)
2620-2690
46.9
2580-2620
48.2
2620-2690
48.2
2570-2620
49.5
2500-2700
50
2500-2700
50.3
2500-2600
52
2600-2700
52
2600-2700
52
2500-2700
52.5
2570-2620
54.1
2620-2690
55.2
2545-2575
55.3
2570-2620
55.4
3300-3800 MHz (WiMAX)
3400-3600
51
3500-3700
52
98
NXP Semiconductors RF Manual 16th edition
3.7.2
RF power transistors for broadcast / ISM applications
Why choose NXP’s RF power transistors for broadcast / ISM applications:
` Highest power
` Best-in-class design support
` Best ruggedness
` Very low thermal resistance design for unrivalled
` Best broadband performance
reliability
NXP's leading LDMOS technologies, together with advanced package concepts, enable power amplifiers that deliver
best-in-class performance. We offer the industry’s highest power and best ruggedness for all broadcast technologies.
Our portfolio includes transistors for Ultra High Frequency (UHF), Very High Frequency (VHF), and High Frequency (HF)
applications and covers ISM frequency bands.
Type
BLF571
BLF645
BLF871(S)
BLF647
BLF572XR(S)*
BLF647P(S)*
BLF573(S)
BLF369
BLF574
BLF574XR(S)*
BLF578
BLF578XR(S)*
BLF861A
BLF174XR(S)
BLF178XR(S)
Product
Driver
Final
fmin
(MHz)
fmax
(MHz)
P1dB
(W)
VDS
(V)
PL
(W)
ηD
(%)
Gp
(dB)
Test signal
Package
10
1
1
1
10
10
10
10
10
10
10
10
470
10
10
500
1400
1000
800
500
1400
500
500
500
500
500
500
860
128
128
20
100
100
300
200
200
300
500
600
600
1200
1400
150
600
1400
50
32
40
32
50
32
50
32
50
50
50
50
32
50
50
20
100
100
150
200
200
300
500
500
600
1000
1400
150
600
1400
70
56
60
60
70
70
70
60
70
70
75
69
60
75
72
27,5
18
21
12,5
24
18
27.2
18
26.5
26
26
23
14
28
29
CW
CW
CW
CW
pulsed
pulsed
CW
CW
CW
pulsed
CW
pulsed
CW
pulsed
pulsed
SOT467C
SOT540A
SOT467
SOT540A
SOT1121
SOT1121
SOT502
SOT800-2
SOT539A
SOT539
SOT539A
SOT539
SOT540A
SOT539
SOT539
Products by function
3.7.2.1 0-1000 MHz (UHF/VHF/HF/ISM) LDMOS line-up
3.7.2.2 UHF 470-860 MHz LDMOS line-up
Type
BLF642
BLF871(S)
BLF881(S)
BLF878
BLF884P(S)
BLF879P
BLF888
BLF888A(S)
BLF888B(S)
Product
Driver
Final
fmin
(MHz)
fmax
(MHz)
P1dB
(W)
VDS
(V)
PL
(W)
ηD
(%)
Gp
(dB)
1
1
1
470
470
470
470
470
470
1400
1000
1000
860
860
860
860
860
860
35
100
140
300
300
500
500
600
600
32
40
50
42
50
42
50
50
50
35
100
140
300
150
200
250
250
250
63
60
49
46
46
47
46
46
46
19
21
21
21
21
21
19
21
21
Test signal
CW
CW
CW
CW
CW
CW
CW
CW
CW
Package
SOT467C
SOT467
SOT467
SOT979A
SOT1121
SOT539A
SOT979A
SOT539
SOT539
3.7.2.3 2.45 GHz ISM LDMOS transistor line-up
Type
BLF25M612(G)
BLF2425M7L(S)140
BLF2425M6L(S)180P
BLF2425M7L(S)200
BLF2425M7L(S)250P
Product
Driver
Final
fmin
(MHz)
fmax
(MHz)
P1dB
(W)
VDS
(V)
PL
(W)
ηD
(%)
Gp
(dB)
Test signal
Package
1
2400
2400
2400
2400
2500
2500
2500
2500
2500
12
140
180
200
250
28
28
28
28
28
12
140
180
200
250
60
52
55
52
55
19
17.5
12
15
15
CW
CW
CW
CW
CW
SOT975
SOT502
SOT539
SOT502
SOT539
Bold red = new, highly recommended product
* Check status in section 3.1, as this type is not yet released for mass production
NXP Semiconductors RF Manual 16th edition
99
3.7.3
RF power transistors for aerospace and defense
Device naming conventions RF power transistors for aerospace and defense
B L S 6 G 2731 S -120 G
option: gullwing shaped leads
P1dB power
S: earless package
P: pallet
frequency band (in 100MHz; here: 2700-3100)
G: standard LDMOS (≤ 28V)
H: high voltage LDMOS (50V)
LDMOS technology generation
A: avionics frequency band operation
L: L-band frequency operation
S: S-band frequency operation
L: high frequency power transistor
B: semiconductor die made of Si
Why choose NXP’s microwave RF power transistors
` High gain
` High efficiency
` Highest reliability
` Improved pulse droop and insertion phase
` Improved ruggedness - overdrive without risk to +5 dB
` Reduces component count and helps simplify L- and S-band radar design
` Uses non-toxic, RoHS-compliant packages
3.7.3.1 Avionics LDMOS transistors
Type
Product
BLA1011-2
BLA1011-10
BLA1011(S)-200R
BLA6G1011-200R
BLA6G1011LS-200RG
BLA0912-250R
BLA1011-300
BLA6H0912-500
BLA6H1011-600
BLU6H0410L(S)-600P
Driver
Final
fmin
(MHz)
fmax
(MHz)
P1dB
(W)
VDS
(V)
PL
(W)
ηD
(%)
Gp
(dB)
Test signal
Package
1030
1030
1030
1030
1030
960
1030
960
1030
400
1090
1090
1090
1090
1090
1215
1090
1215
1090
1000
2
10
200
200
200
250
300
500
600
600
36
36
36
28
28
36
32
50
48
50
2
10
200
200
200
250
300
450
600
600
40
50
65
65
50
57
50
52
57
16
16
15
20
20
13.5
16.5
17
17
20
pulsed
pulsed
pulsed
pulsed
pulsed
pulsed
pulsed
pulsed
pulsed
pulsed
SOT538A
SOT467C
SOT502
SOT502A
SOT502
SOT502A
SOT957A
SOT634A
SOT539A
SOT539
fmin
(MHz)
fmax
(MHz)
P1dB
(W)
VDS
(V)
PL
(W)
ηD
(%)
Gp
(dB)
Test signal
Package
500
1200
500
1200
1200
1200
1200
1400
1400
1400
1400
1400
1400
1400
25
35
130
250
250
250
500
50
36
50
36
36
50
50
25
35
130
250
250
250
500
50
43
50
47
45
55
50
19
13
17
13
15
17
17
pulsed
pulsed
pulsed
pulsed
pulsed
pulsed
pulsed
SOT467C
SOT467C
SOT1135
SOT502A
SOT502A
SOT502
SOT539A
3.7.3.2 L-band LDMOS transistors
Type
Product
BLL6H0514-25
BLL1214-35
BLL6H0514L(S)-130
BLL1214-250R
BLL6G1214L-250
BLL6H1214L(S)-250
BLL6H1214(LS)-500
Driver
Final
Bold red = new, highly recommended product
100
NXP Semiconductors RF Manual 16th edition
3.7.3.3 S-band LDMOS transistors
Type
Product
BLS6G2731-6G
BLS6G3135(S)-20
BLS6G2735L(S)-30
BLS2933-100
BLS7G2325L-105
BLS6G2731(S)-120
BLS6G3135(S)-120
BLS6G2731S-130
BLS6G2933S-130
BLS7G2933S-150
BLS7G2729L(S)-350P
BLS7G3135L(S)-350P
3.7.4
Driver
Final
fmin
(MHz)
fmax
(MHz)
P1dB
(W)
VDS
(V)
PL
(W)
ηD
(%)
Gp
(dB)
Test signal
Package
2700
3100
2700
2900
2300
2700
3100
2700
2900
2900
2700
3100
3100
3500
3500
3300
2500
3100
3500
3100
3300
3300
2900
3500
6
20
30
100
105
120
120
130
130
150
350
350
32
32
32
32
30
32
32
32
32
32
32
32
6
20
30
100
105
120
120
130
130
150
350
350
33
45
50
40
55
48
43
50
47
47
50
43
15
15.5
13
8
16.5
13.5
11
12
12.5
13.5
13.5
10
pulsed
pulsed
pulsed
pulsed
pulsed
pulsed
pulsed
pulsed
pulsed
pulsed
pulsed
pulsed
SOT975C
SOT608
SOT1135
SOT502A
SOT502A
SOT502
SOT502
SOT922-1
SOT922-1
SOT922-1
SOT539
SOT539
Gallium Nitride (GaN) RF power amplifiers
Device
naming conventions GaN RF power amplifiers
Device naming conventions GaN RF power amplifiers
C L
F
1G
0040 S
# P
Products by function
P:
push-pull indicator, P = push-pull type; no P means single-ended transistor
2 to 1500: nominal P3dB in Watts: eg 50 = 50W
S earless type, S = earless; no S means eared package
35 to 60: upper frequency, 10x GHz value: 35 = 3.5GHz; 60 = 6.0GHz
00 to 40: lower frequency, 10x GHz value: 00 = 0GHz or DC; 40 = 4.0GHz
1G: technology generation: 1G = 1st generation
F: package style: F = ceramic, P = overmolded plastic
L: high frequency power transistor
C: primary material identifier: C = wide band-gap compound materials, eg GaN
fmin
(MHz)
fmax
(MHz)
Pout
(W)
Matching
VDS
(V)
ηD
(%)
Gp
(dB)
Test
signal
Package
Applications
CLF1G0060-10*
0
6000
10
-
50
54
14
Pulsed
SOT1227
Cellular, WiMAX, ISM, avionics,
S-band, general purpose
CLF1G0060-30*
0
6000
30
-
50
54
14
Pulsed
SOT1227
Cellular, WiMAX, ISM, avionics,
S-band, general purpose
CLF1G0035-50*
0
3500
50
-
50
54
14.2
Pulsed
SOT467
CLF1G0035-100*
0
3500
100
-
50
52
14.8
Pulsed
SOT467
Type
Cellular, WiMAX, ISM, avionics,
S-band, general purpose
Cellular, WiMAX, ISM, avionics,
S-band, general purpose
3.8 Wireless microcontroller chipsets and modules
Type
Module/
single chip
JN5148-001-M00
Module
JN5148-001-M03
Module
JN5148-001-M04
Module
JN5142-J01
Single chip
JN5148-J01
Single chip
JN5142-001
Single chip
JN5148-001
Single chip
JN5148-Z01
Single chip
Application
2.4-2.4835 GHz
JenNet & IEEE802.15.4
2.4-2.4835 GHz
JenNet & IEEE802.15.4
2.4-2.4835 GHz
JenNet & IEEE802.15.4
2.4-2.4835 GHz
JenNet-IP
2.4-2.4835 GHz
JenNet-IP
2.4-2.4835 GHz
RF4CE & IEEE802.15.4
2.4-2.4835 GHz
JenNet & IEEE802.15.4
2.4-2.4835 GHz
ZigBee PRO
TX
RX
Operating
current current
voltage
Form
factor
TX power
Receiver sensitivity
+2.5 dBm
–95 dBm
15 mA
17.5 mA
2.3-3.6 V
+2.5 dBm
–95 dBm
15 mA
17.5 mA
2.3-3.6 V
+20 dBm
–98 dBm
110mA
23 mA
2.7-3.6 V
+2.5 dBm
–95 dBm
15 mA
17.5 mA
2.3-3.6 V
6 x 6 mm QFN40
+2.5 dBm
–95 dBm
15 mA
17.5 mA
2.3-3.6 V
8 x 8 mm QFN56
+2.5 dBm
–95 dBm
15 mA
17.5 mA
2.3-3.6 V
6 x 6 mm QFN40
+2.5 dBm
–95 dBm
15 mA
17.5 mA
2.3-3.6 V
8 x 8 mm QFN56
+2.5 dBm
–95 dBm
15 mA
17.5 mA
2.3-3.6 V
8 x 8 mm QFN56
Integral antenna
18 x 32 mm
U.FL connector
18 x 30 mm
U.FL connector
18 x 41 mm
Bold red = new, highly recommended product
* Check status in section 3.1, as this type is not yet released for mass production
NXP Semiconductors RF Manual 16th edition
101
4. Design support
This chapter will guide you through the available tools, documents, materials, and links that ease
the design-in of our products.
4.1
Knowing NXP’s RF portfolio
4.3
Product evaluation
Beyond this RF Manual, you can learn about NXP’s broad RF
NXP offers a broad range of support material for evaluating RF
portfolio through the NXP Technical Academy, various webinars
products and optimizing the performance of your application.
and the NXP channel on YouTube.
Data sheets and application notes
The NXP Technical Academy provides training modules where
The first chapter of this RF Manual includes application
you can learn about our products and applications, watch
diagrams, recommended type numbers, and product highlights.
hands-on trainings and even get certified! The training modules
More in-depth application information is available in the
can be viewed on mobile devices as well.
second chapter, in product data sheets or in the Application
Notes section of the NXP website (www.nxp.com/products/
NXP provides RF webinars on a regular basis.
all_appnotes).
(www.nxp.com/news/meet-nxp/webinars-and-podcasts.html#rf)
Simulation tools
On NXP’s YouTube channel (www.youtube.com/user/
To help you evaluate our products in your specific application,
nxpsemiconductors), there are short videos that explain NXP's
NXP offers various simulation tools, including small-signal
portfolio, application information, tips and tricks to optimize
touchstone S-parameters and parametric models that let you
your systems performance, and more.
customize the biasing conditions. The parametric models are
based on best-in-class Mextram models and RFLDMOS models
4.2
Product selection on NXP.com
developed by Philips Research, a recognized leader in physicsbased models. The parametric models fully support AC, DC,
S-parameter, harmonic balance, and time-domain simulations.
Every RF product has its own webpage on the NXP website.
These models allow designers to assess the performance of
Pages can be accessed in several ways: by product tree, by
complex systems at an early stage of the development process.
application area, or via cross-reference search. Or, simply type
'nxp <product>' in the Google search bar.
The models are available for Advanced Design System (ADS),
Microwave Office (MWO) and Ansoft Designer. Spice versions
Product tree and parametric search
of the parametric models, which can be used with almost any
The product tree (www.nxp.com/products/rf) categorizes the
commercial design tool, are also available.
product by function. The parametric search tool allows you to
refine the selection based on performance requirements.
Application area
To find out what NXP offers in each application area, use the
Explore Application section of the NXP website.
Cross reference
NXP maintains a cross-reference of competitor products
and NXP alternatives. This list can be searched online via the
search tool bar on the NXP website or off-line by installing the
X-Reference-Tool.
102
NXP Semiconductors RF Manual 16th edition
4.4
Additional design-in support
If you need additional design-in support, please contact your
local NXP sales representative or authorized distributor. You can
also submit a question using the web form on the NXP website.
4.5
Application notes
Product
category
Filename
Description
Amplifiers
AN11152
Reducing the Spurs at RF_out caused by the biasing
choke during fast switching on and off in TDD system
Amplifiers
AN11148
BGU7003 1900MHz to 2100MHz LNA Application
PLL’s and
Oscillators
AN11144
Universal Single LNB with TFF101x FIMOD IC
Amplifiers
AN11135
Replacing HMC625 by NXP BGA7204
Amplifiers
AN11130
Bias module for 50 V GaN demonstration boards
Transistors
AN11118
BFU725F/N1 1.5 GHz LNA evaluation board
Amplifiers
AN11103
Externally-matched 900 MHz LNA using BGU7005
Transistors
AN11102
BFU725F/N1 2.4 GHz LNA evaluation board
Amplifiers
AN11101
BGU7007 GPS front end evaluation board
Amplifiers
AN11091
Ohmic FM LNA for embedded Antenna in Portable
applications with BGU6102
Amplifiers
AN11090
50 Ohm FM LNA for embedded Antenna in Portable
applications with BGU6102
Amplifiers
AN11086
BGU7003 LNA application for GPS L2 band
Amplifiers
AN11072
BGU7003 400MHz and 900 MHz applicaiton
Amplifiers
AN11068
Transistors
AN11066
Amplifiers
AN11062
Amplifiers
AN11035
Amplifiers
AN11034
Transistors
AN11024
Transistors
AN11010
Single stage Ku band LNA using BFU730F
Transistors
AN11007
Single stage 5-6 GHz WLAN LNA with BFU730F
Transistors
AN11006
Single stage 2.3_2.7GHz LNA with BFU730F
Amplifiers
AN10967
BLF578 demo for 352 MHz 1kW CW power
Amplifiers
AN10953
BLF645 10 MHz to 600 MHz 120 W amplifier
Amplifiers
AN10951
Amplifiers
AN10945
Amplifiers
AN10944
Amplifiers
AN10933
Amplifiers
AN10923
Amplifiers
AN10921
Amplifiers
AN10896
Amplifiers
AN10885
Amplifiers
AN10882
Amplifiers
AN10869
Broadband DVB-T UHF power amplifier with the BLF888
Amplifiers
AN10858
174 MHz to 230 MHz DVB-T power amplifier with the
BLF578
Amplifiers
AN10847
Doherty RF performance using the BLF6G20-230PRN
Amplifiers
AN10800
Using the BLF578 in the 88 MHz to 108 MHz FM band
Amplifiers
AN10714
Using the BLF574 in the 88-108 MHz FM band
BGU7005 matching options for improved LTE jammer
immunity
SDARS active antenna 1st stage LNA with BFU730F,
2.33 GHz
Broadband DVB-T UHF power amplifier with the
BLF888A
50 Ohm FM LNA for embedded Antenna in Portable
applications with BGU7003W
High Ohmic FM LNA for embedded Antenna in
Portable applications with BGU7003W
SDARS active antenna 2nd stage LNA with BFU690,
2.33 GHz
Design support
Customer evaluation kits and samples
Several kits are available for evaluation of our products. Boards
are provided with industry-standard RF connectors to facilitate
measurements and integration in your application. The features
and content of each kit are described on the NXP website and
are listed on the corresponding product page. On the Customer
Evaluation Kits page you can also find support materials, such
as the latest user manuals and software updates. You can order
small quantities of all products to build and evaluate prototypes.
To obtain a kit or order samples, please contact your local NXP
representative or authorized distributor.
1805 MHz to 1880 MHz asymmetrical Doherty amplifier
with the BLF7G20LS-90P and BLF7G21LS-160P
174 MHz to 230 MHz DVB-T power amplifier with the
BLF881
1930 MHz to 1990 MHz Doherty amplifier using the
BLF7G20LS-200
2.5 GHz to 2.7 GHz Doherty power amplifier using the
BLF7G27LS-150P
1.5GHz Doherty power amplifier for base station
applications using the BLF6G15L-250PBRN
BLF7G20LS-200 Doherty 1.805-1.88 GHz RF power
amplifier
Mounting and Soldering of RF transistors
Doherty RF performance analysis using the
BLF7G22LS-130
Dependency of BLF578 gate bias voltage on
temperature
NXP Semiconductors RF Manual 16th edition
103
4.6
4.6.1
Simulation models
Simulation models for RF power devices
Updates of this overview are available in PDF format at:
http://www.nxp.com/wcm_documents/models/RFPower_
Model_Overview.pdf
Type
ADS model
Microwave Office
model
BLF6G38-10G
Available
Available
BLF6G38-25
Available
Available
BLF6G38-50
Available
Available
BLF6G38LS-100
Available
BLF6G38LS-50
Available
Available
BLF6G38S-25
Available
Available
BLF7G15LS-300P
Available
BLF7G15LS-200
Available
BLF7G20L-200
Available
BLF7G20L-250P
Available
BLF7G20L-90P
Available
BLF7G20LS-140P
Available
Type
ADS model
Microwave Office
model
BLA6G1011-200R
Available
Available
BLF7G20LS-200
Available
BLA6G1011L-200RG
Available
Available
BLF7G20LS-250P
Available
BLA6G1011LS-200RG
Available
Available
BLF7G20LS-90P
Available
BLA6H0912-500
Available
Available
BLF7G21L-160P
Available
BLA6H1011-600
Available
Available
BLF7G21LS-160P
Available
BLF369
Available
BLF7G22L-130
Available
BLF3G21-6
Available
BLF7G22L-160
Available
BLF571
Available
Available
BLF7G22L-200
Available
BLF573
Available
Available
BLF7G22L-250P
Available
BLF573S
Available
Available
BLF7G22LS-130
Available
BLF574
Available
Available
BLF7G22LS-160
Available
BLF578
Available
Available
BLF7G22LS-200
Available
BLF645
Available
Available
BLF7G22LS-250P
Available
BLF6G10-135RN
Available
Available
BLF7G24L-100
Available
BLF6G10-200RN
Available
BLF7G24L-140
Available
BLF6G10-45
Available
BLF7G24LS-100
Available
BLF6G10L-260PRN
Available
BLF7G24LS-140
Available
BLF6G10L-40BRN
Available
BLF7G27L-100
Available
BLF6G10LS-135RN
Available
BLF7G27L-140
Available
BLF6G10LS-200RN
Available
BLF7G27L-150P
Available
BLF6G10LS-260PRN
Available
BLF7G27L-200PB
Available
BLF6G10S-45
Available
BLF7G27L-75P
Available
BLF6G15L-250PBRN
Available
BLF7G27L-90P
Available
BLF6G15L-40BRN
Available
BLF7G27LS-100
Available
BLF6G20-180RN
Available
BLF7G27LS-140
Available
BLF6G20-230PRN
Available
BLF7G27LS-150P
Available
BLF6G20-45
Available
BLF7G27LS-75P
Available
BLF6G20LS-180RN
Available
BLF7G27LS-90P
Available
BLF6G20S-230PRN
Available
BLF871
Available
Available
BLF6G20S-45
Available
Available
BLF871S
Available
Available
BLF6G21-10G
Available
Available
BLF878
Available
Available
BLF6G22-180RN
Available
BLF881
Available
Available
BLF6G22-45
Available
BLF881S
Available
Available
BLF6G22L-40P
Available
BLF888
Available
BLF6G22LS-180RN
Available
BLF888A
Available
Available
BLF6G22LS-40P
Available
BLF888AS
Available
Available
BLF6G22S-45
Available
BLL6H0514-25
Available
Available
BLF6G27-10
Available
BLL6H0514L-130
Available
Available
BLF6G27-10G
Available
BLL6H0514LS-130
Available
Available
BLF6G27-135
Available
BLL6H1214-500
Available
BLF6G27-45
Available
BLL6H1214L-250
Available
Available
BLF6G27-75
Available
BLL6H1214LS-250
Available
Available
BLF6G27L-40P
Available
BLM6G22-30
Available
BLF6G27LS-135
Available
BLS6G2731-6G
Available
BLF6G27LS-40P
Available
BLS6G2731S-130
Available
Available
BLF6G27LS-75
Available
BLS6G3135-120
Available
Available
BLF6G27S-45
Available
BLS6G3135-20
Available
BLF6G38-10
Available
BLS6G3135S-120
Available
BLF6G38-100
Available
BLS6G3135S-20
Available
104
NXP Semiconductors RF Manual 16th edition
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Simulation models for RF bipolar wideband transistors
BFG18A
BFQ19
BFQ540
BFQ67
BFQ67W
BFR106
BFR505
BFR505T
BFR520
BFR540
BFR92A
BFR92AW
BFR93A
BFR93AW
BFS17
BFS17A
BFS17W
BFS25A
BFS505
BFS520
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
Mextram
model
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
Mextram
model
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
Spice model
Mextram
model
Spice model
S-parameters
Spice model
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
NXP Semiconductors RF Manual 16th edition
Design support
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
Ansoft Designer design kit
Spice model
BFM520
BFQ149
√
Microwave Office design kit
S-parameters
BFG67
BFG67/X
BFG10
BFG10W
BFG10W/X
BFG135
BFG198
BFG21W
BFG25A/X
BFG25AW/X
BFG31
BFG35
BFG310/XR
BFG310W/XR
BFG325/XR
BFG325W/XR
BFG403W
BFG410W
BFG424F
BFG424W
BFG425W
BFG480W
BFG505
BFG505/X
BFG505W/X
BFG520
BFG520W
BFG520X
BFG520/XR
BFG540
BFG540/X
BFG540/XR
BFG540W
BFG541
BFG590
BFG590/X
BFG591
BFG92A/X
BFG93A
BFG94
BFG97
BFM505
S-parameters
Type
Evaluation
board
ADS 2009 design kit v2.2
S-parameters
4.6.2
105
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
BB145B
BB149
BB149A
BB156
BB179
BB179B
BB201
BB202
BB207
BB208-2
106
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
Mextram
model
√
√
√
√
√
√
√
Mextram
model
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
Mextram
model
S-parameters
√
√
√
√
Spice model
Ansoft Designer design kit
Mextram
model
Microwave Office design kit
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
NXP Semiconductors RF Manual 16th edition
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
Mextram
model
Spice model
Mextram
model
Ansoft Designer design kit
Spice model
Mextram
model
Spice model
S-parameters
Spice model
S-parameters
Evaluation
board
√
√
√
√
√
√
√
√
√
√
Microwave Office design kit
S-parameters
Simulation models for RF varicap diodes
ADS 2009 design kit v2.2
Type
√
Spice model
Mextram
model
Spice model
S-parameters
Spice model
S-parameters
Evaluation
board
BF1211
BF1211R
BF1211WR
BF1212
BF1212R
BF1212WR
BF511
BF513
BF862
BF904
BF908
BF909
BF998
4.6.4
√
Simulation models for RF MOSFET transistors
ADS 2009 design kit v2.2
Type
√
Spice model
Mextram
model
Spice model
S-parameters
√
√
√
√
√
√
√
√
√
Spice model
√
Ansoft Designer design kit
S-parameters
4.6.3
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
Microwave Office design kit
S-parameters
BFS540
BFT25
BFT25A
BFT92
BFT92W
BFT93
BFT93W
BFU725F
BFU725F/N1
BFU610F
BFU630F
BFU660F
BFU690F
BFU710F
BFU730F
BFU730LX
BFU760F
BFU790F
PBR941
PBR951
PRF947
PRF949
PRF957
Spice model
Type
S-parameters
Evaluation
board
ADS 2009 design kit v2.2
S-parameters
Simulation models for RF bipolar wideband transistors (continued)
S-parameters
4.6.2
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
Mextram
model
Spice model
Mextram
model
Ansoft Designer design kit
Spice model
Mextram
model
Spice model
S-parameters
Spice model
Microwave Office design kit
Design support
BGA2001
BGA2002
BGA2003
BGA2711
BGA2748
BGA2771
BGA2776
BGA2709
BGA2712
BGA2714
BGA2715
BGA2716
BGA2717
BGA2011
BGA2012
BGA2031
BGA6289
BGA6489
BGA6589
BGA2800
BGA2801
BGA2815
BGA2816
BGA2850
BGA2865
BGA2866
BGA7024
BGA7027
BGA7124
BGA7127
BGM1011
BGM1012
BGM1013
BGM1014
BGU6102
BGU7031
BGU7032
BGU7033
BGU7041
BGU7042
BGU7044
BGU7045
BGU7050
BGU7051
BGU7052
BGU7053
BGU7061
BGU7062
BGU7063
BGU7064
BGU7003
BGU7003W
BGU7004
BGU7005
BGU7007
BGU8007
S-parameters
Type
Evaluation
board
ADS 2009 design kit v2.2
S-parameters
Simulation models for RF MMIC amplifiers
S-parameters
4.6.5
√
√
√
√
√
NXP Semiconductors RF Manual 16th edition
107
5. Cross-references & replacements
NXP cross-references:
http://www.nxp.com/xref/nxp?typenumber
NXP end-of-life:
http://www.nxp.com/products/eol/
5.1 Cross-references: manufacturer types versus NXP types
In alphabetical order of manufacturer type
Abbreviations:
Base station
Broadcasts
BS diode
CATV OR
CATV PD
CATV PPA
CATV PPA/HG
CATV RA
FET
A&D
MMIC
Varicap
WB trs 1-4
WB trs 5-7
Base station power transistors
Broadcast power transistors
Band switch diode
CATV optical receiver
CATV power doubler
CATV push-pull amplifier
CATV push-pull amplifier high gain
CATV reverse amplifier
Field-effect transistor
Microwave power transistors
Monolithic microwave integrated circuit
Varicap diode
Wideband transistor 1-4 generation
Wideband transistor 5-7 generation
Manufacturer type
Manufacturer
NXP type
Product
family
Manufacturer type
Manufacturer
NXP type
Product
family
3001
3003
3005
10502
AH125
SXB-4089
0510-50A
1011LD110A
1011LD110B
1014-12
1014-2
1014-6A
10AM20
1617-35
1SS314
1SS356
1SS381
1SS390
1SV172
1SV214
1SV214
1SV215
1SV228
1SV231
1SV232
1SV233
1SV234
1SV239
1SV241
1SV246
Microsemi
Microsemi
Microsemi
Microsemi
Triquint
RFMD
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Toshiba
Rohm
Toshiba
Rohm
Toshiba
Toshiba
Toshiba
Toshiba
Toshiba
Toshiba
Toshiba
Sanyo
Sanyo
Toshiba
Sanyo
Sanyo
BLS7G3135LS-350P
BLS7G3135L-350P
BLS6G3135S-20
BLA1011-200R
BGA7127
BGA7127
BLF1043
BLA1011-300
BLA1011S-200
BLL1214-250R
BLL1214-35
BLL6G1214L-250
BLF1046
BLL6G1214LS-250
BA591
BA591
BA277
BA891
BAP50-04
BB149
BB149A
BB153
BB201
BB152
BB148
BAP70-03
BAP64-04
BB145B
BAP64-02
BAP64-04W
A&D
A&D
A&D
A&D
MMIC
MMIC
Broadcast
A&D
A&D
A&D
A&D
A&D
Broadcast
A&D
BS diode
BS diode
BS diode
BS diode
PIN diode
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
PIN diode
PIN diode
Varicap
PIN diode
PIN diode
1SV247
1SV248
1SV249
1SV250
1SV251
1SV252
1SV254
1SV263
1SV264
1SV266
1SV267
1SV269
1SV270
1SV271
1SV278
1SV279
1SV282
1SV282
1SV283
1SV283
1SV284
1SV288
1SV290
1SV294
1SV305
1SV307
1SV308
1T362
1T362A
1T363A
Sanyo
Sanyo
Sanyo
Sanyo
Sanyo
Toshiba
Toshiba
Sanyo
Sanyo
Sanyo
Sanyo
Toshiba
Toshiba
Toshiba
Toshiba
Toshiba
Toshiba
Toshiba
Toshiba
Toshiba
Toshiba
Toshiba
Toshiba
Sanyo
Toshiba
Toshiba
Toshiba
PEC
PEC
PEC
BAP70-02
BAP50-02
BAP50-04W
BAP50-03
BAP50-04
BAP50-04W
BB179
BAP50-02
BAP50-04W
BAP50-03
BAP50-04
BB148
BB156
BAP50-03
BB179
BB179
BB178
BB187
BB178
BB187
BB156
BB152
BB182
BAP70-03
BB202
BAP51-03
BAP51-02
BB149
BB149A
BB153
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
Varicap
PIN diode
PIN diode
PIN diode
PIN diode
Varicap
Varicap
PIN diode
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
PIN diode
Varicap
PIN diode
PIN diode
Varicap
Varicap
Varicap
108
NXP Semiconductors RF Manual 16th edition
Manufacturer
NXP type
Product
family
Manufacturer type
Manufacturer
NXP type
Product
family
1T368A
1T369
1T379
1T397
1T399
1T402
1T403
1T404A
1T405A
1T406
1T408
2324-12L
2324-20
2324-25
2424-25
2F1G20DS
2F1G20DS
2F1G20P
2F1G22DS
2F1G22DS
2F1G22DS
2F1G23P
2F1G23P
2F1G24D
2F1G24D
2F1G24DS
2F722DS
2F8718P
2F8719DS
2F8720DS
2F8723P
2F8734P
2N4856
2N4857
2N4858
2SC4094
2SC4095
2SC4182
2SC4184
2SC4185
2SC4186
2SC4226
2SC4227
2SC4228
2SC4247
2SC4248
2SC4315
2SC4320
2SC4321
2SC4325
2SC4394
2SC4536
2SC4537
2SC4592
2SC4593
2SC4703
2SC4784
2SC4807
2SC4842
2SC4899
2SC4900
2SC4901
2SC4988
2SC5011
2SC5012
2SC5065
2SC5085
2SC5087
2SC5088
2SC5090
2SC5092
2SC5095
2SC5107
2SC5463
2SC5508
2SC5508
2SC5593
PEC
PEC
PEC
PEC
PEC
PEC
PEC
PEC
PEC
PEC
PEC
Microsemi
Microsemi
Microsemi
Microsemi
RFHIC
RFHIC
RFHIC
RFHIC
RFHIC
RFHIC
RFHIC
RFHIC
RFHIC
RFHIC
RFHIC
RFHIC
RFHIC
RFHIC
RFHIC
RFHIC
RFHIC
Standard
Standard
Standard
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Toshiba
Toshiba
Toshiba
Toshiba
Toshiba
Toshiba
Toshiba
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Toshiba
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Toshiba
Toshiba
Toshiba
Toshiba
Toshiba
Toshiba
Toshiba
Toshiba
Toshiba
Renesas Electronics
Renesas Electronics
Renesas Electronics
BB148
BB152
BB131
BB152
BB148
BB179B
BB178
BB187
BB187
BB182
BB187
BLS6G2731S-120
BLS6G2731-6G
BLS6G2731-120
BLS6G2731S-130
CGD1040Hi
CGD1042H
CGY1041
CGD1042H
CGD1042Hi
CGD982HCi
CGY1041
CGY1043
CGD1044Hi
CGD985HCi
CGD1044H
BGD816L
BGY885A
BGD812
BGD814
BGY887
CGY888C
BSR56
BSR57
BSR58
BFG520/XR
BFG520/XR
BFS17W
BFS17W
BFS17W
BFR92AW
PRF957
BFQ67W
BFS505
BFR92AW
BFR92AW
BFG520/XR
BFG520/XR
BFQ67W
BFS505
PRF957
BFQ19
BFR93AW
BFG520/XR
BFS520
BFQ19
BFS505
BFQ18A
BFG540W/XR
BFS505
BFG520/XR
BFS520
BFQ540
BFG540W/XR
BFG540W/XR
PRF957
PRF957
BFG520/XR
BFG540W/XR
BFS520
BFG520/XR
BFS505
BFS505
BFQ67W
BFU660F
BFU660F
BFG410W
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
A&D
A&D
A&D
A&D
CATV PD
CATV PD
CATV PP
CATV PD
CATV PD
CATV PD
CATV PP
CATV PP
CATV PD
CATV PD
CATV PD
CATV PD
CATV PP
CATV PD
CATV PD
CATV PP
CATV PP
FET
FET
FET
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 5-7
WB trs 5-7
WB trs 5-7
2SC5594
2SC5623
2SC5624
2SC5631
2SC6023
2SK210BL
2SK508
3SK290
AD8376
AD8376
ADL5354
ADL5356
ADL5358
ADL5372
ADL5375
ADL5812
ADRF660x
AH115-S8G
AH116-S8G
AH118
AH118
AH118
AH118
AH125
AH125
AH212-EG
AH212-S8G
AH215
AH215
AH215-S8G
AH225-S8G
AH312-S8G
AH314-G
AH315-G
AH315-G
AH315-G
AH315-G
AH315-G
AH315-G
AN26112A
AN26120A
AN26122A
BA592
BA595
BA595
BA597
BA885
BA892
BA892-02V
BA892-02V
BA892V-02V-GS08
BA895
BAR14-1
BAR15-1
BAR16-1
BAR17
BAR50-02L
BAR50-02V
BAR50-02V
BAR50-02V
BAR50-03W
BAR60
BAR61
BAR63
BAR63-02L
BAR63-02L
BAR63-02V
BAR63-02W
BAR63-03W
BAR63-05
BAR63-05W
BAR63V-02V-GS08
BAR63V-05W-GS08
BAR64-02LRH
BAR64-02V
BAR64-02W
BAR64-03W
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Sanyo
Renesas Electronics
Renesas Electronics
Renesas Electronics
ADI
ADI
ADI
ADI
ADI
ADI
ADI
ADI
ADI
Triquint
Triquint
Triquint
Triquint
Triquint
Triquint
Triquint
Triquint
Triquint
Triquint
Triquint
Triquint
Triquint
Triquint
Triquint
Triquint
Triquint
Triquint
Triquint
Triquint
Triquint
Triquint
Panasonic
Panasonic
Panasonic
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Vishay
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Vishay
Vishay
Infineon
Infineon
Infineon
Infineon
BFG425W
BFG410W
BFG425W
BFQ540
BFG424W
PMBFJ309
PMBFJ308
BF998WR
BGA7350
BGA7351
BGX7221
BGX7221
BGX7220
BGX710x
BGX710x
BGX7221
BGX721x
BLF8G27LS-140V
BLF6G10-135RN
BGA7024
BGA7024
BGA7124
BGA7124
BGA7027
BGA7127
BLF6G38-10
BLF6G38-100
BGA7130
BGA7130
BLF6G27-10
BLF6G27-10G
BLF7G24L-100
BLF6G27LS-100
BLF6G10-160RN
BLF6G10-200RN
BLF7G24L-140
BLF7G24L-160P
BLF6G27LS-135
BLF6G27LS-40P
BGU7045
BGU7042
BGU7045
BA591
BAP51-03
BAP70-03
BAP70-03
BAP70-03
BA891
BA277
BA891
BA891
BAP70-02
BAP70-03
BAP70-03
BAP70-03
BAP50-03
BAP50LX
BAP50-02
BAP50-03
BAP50-05
BAP70-02
BAP50-03
BAP50-03
BAP63-03
BAP63-02
BAP63LX
BAP63-02
BAP63-02
BAP63-03
BAP63-05W
BAP63-05W
BAP63-02
BAP63-05W
BAP64LX
BAP64-02
BAP64-02
BAP64-03
WB trs 5-7
WB trs 5-7
WB trs 5-7
WB trs 1-4
WB trs 5-7
FET
FET
FET
MMIC
MMIC
MMIC
MMIC
MMIC
MMIC
MMIC
MMIC
MMIC
Base station
Base station
MMIC
MMIC
MMIC
MMIC
MMIC
MMIC
Base station
Base station
MMIC
MMIC
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
MMIC
MMIC
MMIC
BS diode
PIN diode
PIN diode
PIN diode
PIN diode
BS diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
NXP Semiconductors RF Manual 16th edition
109
Cross-references
& replacements
Manufacturer type
Manufacturer type
Manufacturer
NXP type
Product
family
BAR64-04
BAR64-04W
BAR64-05
BAR64-05W
BAR64-06
BAR64-06W
BAR64V-02V-GS08
BAR64V-04-GS08
BAR64V-05-GS08
BAR64V-06-GS08
BAR64V-06W-GS08
BAR65-02L
BAR65-02V
BAR65-02W
BAR65-03W
BAR65V-02V-GS08
BAR66
BAR67-02W
BAR67-03W
BAT18-04
BB304C
BB304M
BB305C
BB305M
BB403M
BB501C
BB501M
BB502C
BB502M
BB503C
BB503M
BB535
BB545
BB555
BB565
BB601M
BB639
BB639
BB640
BB641
BB659
BB664
BB664
BB669
BB814
BB831
BB833
BB835
BBY58-02V
BBY65
BF1005R
BF1005S
BF1005SR
BF2030
BF2030
BF2030R
BF2030R
BF2030W
BF2030W
BF2040
BF2040R
BF2040W
BF5020
BF5020R
BF5020W
BF5030W
BF770A
BF771
BF771W
BF772
BF775
BF775A
BF775W
BF851A
BF851B
BF851C
BF994S
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Vishay
Vishay
Vishay
Vishay
Vishay
Infineon
Infineon
Infineon
Infineon
Vishay
Infineon
Infineon
Infineon
Infineon
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Infineon
Infineon
Infineon
Infineon
Renesas Electronics
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Standard
Standard
Standard
Vishay
BAP64-04
BAP64-04W
BAP64-05
BAP64-05W
BAP64-06
BAP64-06W
BAP64-02
BAP64-04
BAP64-05
BAP64-06
BAP64-06W
BAP65LX
BAP65-02
BAP65-02
BAP65-03
BAP65-02
BAP1321-04
BAP1321-02
BAP1321-03
BAT18
BF1201WR
BF1201R
BF1201WR
BF1201R
BF909R
BF1202WR
BF1202R
BF1202WR
BF1202R
BF1202WR
BF1202R
BB149
BB149A
BB179B
BB179
BF1202
BB148
BB153
BB152
BB152
BB178
BB178
BB187
BB152
BB201
BB131
BB131
BB131
BB202
BB202
BF1105R
BF1105
BF1105R
BF1211
BF1212
BF1211R
BF1212R
BF1211WR
BF1212WR
BF909
BF909R
BF909WR
BF1212
BF1212R
BF1212WR
BF909WR
BFR93A
PBR951
BFS540
BFG540
BFR92A
BFR92A
BFR92AW
BF861A
BF861B
BF861C
BF994S
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
Varicap
Varicap
Varicap
Varicap
FET
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
FET
FET
FET
FET
110
NXP Semiconductors RF Manual 16th edition
Manufacturer type
Manufacturer
NXP type
Product
family
BF996S
BF998
BF998
BF998-GS08
BF998R
BF998R
BF998R-GS08
BF998RW
BF998W
BFG135A
BFG193
BFG194
BFG196
BFG19S
BFG235
BFP180
BFP181
BFP181T-GS08
BFP182
BFP183
BFP183R
BFP183T-GS08
BFP183TW-GS08
BFP193
BFP193W
BFP196T-GS08
BFP196TR-GS08
BFP196TRW-GS08
BFP196TW-GS08
BFP196W
BFP280
BFP405
BFP420
BFP450
BFP620
BFP640
Vishay
Infineon
Vishay
Vishay
Vishay
Infineon
Vishay
Vishay
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Vishay
Infineon
Infineon
Infineon
Vishay
Vishay
Infineon
Infineon
Vishay
Vishay
Vishay
Vishay
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
BF996S
BF998
BF998
BF998
BF998R
BF998R
BF998R
BF998WR
BF998WR
BFG135
BFG198
BFG31
BFG541
BFG97
BFG135
BFG505/X
BFG67/X
BFG67/X
BFG67/X
BFG520/X
BFG520/XR
BFG520/X
BFG520W/X
BFG540/X
BFG540W/XR
BFG540/X
BFG540/XR
BFG540W/XR
BFG540W/X
BFG540W/XR
BFG505/X
BFG410W
BFG425W
BFG480W
BFU660F
BFU630F, BFU660F
FET
FET
FET
FET
FET
FET
FET
FET
FET
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 5-7
WB trs 5-7
WB trs 5-7
WB trs 5-7
WB trs 5-7
BFP650
Infineon
BFU690F, BFU760F,
BFU790F
WB trs 5-7
BFP67-GS08
BFP67R-GS08
BFP720
BFP740
BFP740
BFP740F
Vishay
Vishay
Infineon
Infineon
Infineon
Infineon
BFG67/X
BFG67/X
BFU710F, BFU730F
BFU710F, BFU730F
BFU725F
BFU725F
WB trs 1-4
WB trs 1-4
WB trs 5-7
WB trs 5-7
WB trs 5-7
WB trs 5-7
BFP750
Infineon
BFU690F, BFU760F,
BFU790F
WB trs 5-7
BFP81
BFP92A-GS08
BFP93A
BFP93A-GS08
BFQ193
BFQ19S
BFQ67-GS08
BFR106
BFR180
BFR180W
BFR181
BFR181T-GS08
BFR181TW-GS08
BFR181W
BFR182
BFR182W
BFR183
BFR183T-GS08
BFR183TW-GS08
BFR183W
BFR193
BFR193TW-GS08
BFR193W
BFR196T-GS08
BFR196TW-GS08
BFR35AP
BFR92AL
BFR92AW-GS08
BFR92P
BFR92W
BFR93A
Infineon
Vishay
Infineon
Vishay
Infineon
Infineon
Vishay
Infineon
Infineon
Infineon
Infineon
Vishay
Vishay
Infineon
Infineon
Infineon
Infineon
Vishay
Vishay
Infineon
Infineon
Vishay
Infineon
Vishay
Vishay
Infineon
Freescale
Vishay
Infineon
Infineon
Infineon
BFG92A/X
BFG92A/X
BFG93A/X
BFG93A/X
BFQ540
BFQ19
BFQ67W
BFR106
BFR505
BFS505
BFR520
BFR520
BFS520
BFS520
PBR941
PRF947
PBR951
PBR951
PRF957
PRF957
PBR951
PRF957
PRF957
BFR540
BFS540
BFR92A
BFR92A
BFR92AW
BFR92A
BFR92AW
BFR93A
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
Manufacturer
NXP type
Product
family
Manufacturer type
Manufacturer
NXP type
Product
family
BFR93AL
BFR93AW
BFR93AW-GS08
BFR93-GS08
BFS17-GS08
BFS17-GS08
BFS17L
BFS17P
BFS17W
BFS17W-GS08
BFS481
BFS483
BFT92
BFT93
BG3123
BG3123R
BG3130
BG3130R
BG3430R
BG5120K
BG5130R
BG5412K
BGA428
BGA461
BGA615
BGA715
BGA915
BGB707
BGB717
BIC701C
BIC701M
BIC702C
BIC702M
BIC801M
BSR111
BSR112
BSR113
BSR174
BSR175
BSR176
BSR177
CA901
CA901A
CMM6004-SC
CMM6004-SC
CMM6004-SC
CMM6004-SC
CMY91
CMY91
CXE1089Z
CXE1089Z
D10040180GT
D10040180GTH
D10040200GT
D10040200GTH
D10040200P1
D10040200PH1
D10040220GT
D10040220GTH
D10040230P1
D10040230PH1
D10040240GT
D10040240GTH
D10040250GT
D10040250GTH
D10040270GT
D10040270GTH
D10040270GTL
D8740180GT
D8740180GTH
D8740220GT
D8740220GTH
D8740240GT
D8740240GTH
D8740250GT
D8740250GTH
D8740270GT
Freescale
Infineon
Vishay
Vishay
Vishay
Vishay
Freescale
Infineon
Infineon
Vishay
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Mimix
Mimix
Mimix
Mimix
Infineon
Infineon
RFMD
RFMD
RFMD
RFMD
RFMD
RFMD
RFMD
RFMD
RFMD
RFMD
RFMD
RFMD
RFMD
RFMD
RFMD
RFMD
RFMD
RFMD
RFMD
RFMD
RFMD
RFMD
RFMD
RFMD
RFMD
RFMD
RFMD
RFMD
BFR93A
BFR93AW
BFR93AW
BFR93A
BFS17
BFS17A
BFS17
BFS17A
BFS17W
BFS17W
BFM505
BFM520
BFT92
BFT93
BF1203
BF1203
BF1214
BF1214
BF1207
BF1210
BF1206
BF1208D
BGU7003
BGU7003
BGU7007
BGU8007
BGU7005
BGU6102
BGU6102
BF1105WR
BF1105R
BF1105WR
BF1105R
BF1105
PMBFJ111
PMBFJ112
PMBFJ113
PMBFJ174
PMBFJ175
PMBFJ176
PMBFJ177
BGX885N
BGX885N
BGA7024
BGA7124
BGA7124
BGA7204
BGA2022
BGA2022
BGA6489
BGA6589
CGD1042H
CGD1042H
CGD1042H
CGD1042H
CGD1042H
CGD1042H
CGD1042H
CGD1042H
CGD1042H
CGD1042H
CGD1044H
CGD1044H
CGD1044H
CGD1044H
CGD1044H
CGD1044H
CGD1044H
CGD942C
CGD942C
CGD942C
CGD942C
CGD944C
CGD944C
CGD944C
CGD944C
CGD944C
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
FET
FET
FET
FET
FET
FET
FET
FET
MMIC
MMIC
MMIC
MMIC
MMIC
MMIC
MMIC
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
CATV PPA
CATV PPA
MMIC
MMIC
MMIC
MMIC
MMIC
WB trs 1-4
MMIC
MMIC
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
D8740270GTH
D8740320GT
D8740320GTH
EC2C03C
FSD273TA
FSD273TA
HBFP0405
HBFP0420
HBFP0450
HMC454ST89E
HMC454ST89E
HMC454ST89E
HMC617LP3
HMC618LP3
HMC625
HMC667LP2
HSC277
HSMP3800
HSMP3802
HSMP3804
HSMP3810
HSMP3814
HSMP381B
HSMP381C
HSMP381F
HSMP3820
HSMP3822
HSMP3830
HSMP3832
HSMP3833
HSMP3834
HSMP3860
HSMP3862
HSMP3864
HSMP386B
HSMP386E
HSMP386L
HSMP3880
HSMP3890
HSMP3892
HSMP3894
HSMP3895
HSMP389B
HSMP389C
HSMP389F
HVB14S
HVC131
HVC132
HVC200A
HVC200A
HVC202A
HVC202B
HVC300A
HVC300B
HVC306A
HVC306B
HVC355B
HVC359
HVC363A
HVC376B
HVC376B
HVD132
HVU131
HVU132
HVU202(A)
HVU202(A)
HVU300A
HVU307
HVU315
HVU316
HVU363A
HVU363A
HVU363B
IB0912L200
IB0912L30
IB0912L70
IB0912M210
RFMD
RFMD
RFMD
Sanyo
Skyworks
Skyworks
Agilent
Agilent
Agilent
Hittite
Hittite
Hittite
Hittite
Hittite
Hittite
Hittite
Renesas Electronics
Agilent
Agilent
Agilent
Agilent
Agilent
Agilent
Agilent
Agilent
Agilent
Agilent
Agilent
Agilent
Agilent
Agilent
Agilent
Agilent
Agilent
Agilent
Agilent
Agilent
Agilent
Agilent
Agilent
Agilent
Agilent
Agilent
Agilent
Agilent
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Integra
Integra
Integra
Integra
CGD944C
CGD888C
CGD888C
BB145B
BB148
BB178
BFG410W
BFG425W
BFG480W
BGA7027
BGA7127
BGA7127
BGU7051
BGU7052
BGA7204
BGU7053
BA277
BAP70-03
BAP50-04
BAP50-05
BAP50-03
BAP50-05
BAP50-03
BAP50-05
BAP64-05W
BAP1321-03
BAP1321-04
BAP64-03
BAP64-04
BAP64-06
BAP64-05
BAP50-03
BAP50-04
BAP50-05
BAP50-02
BAP50-04W
BAP50-05W
BAP51-03
BAP51-03
BAP64-04
BAP64-05
BAP51-02
BAP51-02
BAP64-04
BAP51-05W
BAP50-04W
BAP65-02
BAP51-02
BB178
BB187
BB179
BB179B
BB182
BB182
BB187
BB187
BB145B
BB202
BB178
BB198
BB202
BAP51-02
BAP65-03
BAP51-03
BB149
BB149A
BB152
BB148
BB148
BB131
BB148
BB153
BB148
BLA1011-200R
BLA1011-2
BLA1011-200
BLA0912-250
CATV PD
CATV PD
CATV PD
Varicap
Varicap
Varicap
WB trs 5-7
WB trs 5-7
WB trs 5-7
MMIC
MMIC
MMIC
MMIC
MMIC
MMIC
MMIC
BS diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
PIN diode
PIN diode
PIN diode
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
A&D
A&D
A&D
A&D
NXP Semiconductors RF Manual 16th edition
Cross-references
& replacements
Manufacturer type
111
Manufacturer type
Manufacturer
NXP type
Product
family
Manufacturer type
Manufacturer
NXP type
Product
family
IB0912M350
IB0912M500
IB0912M600
IB0912M70
IB1011S1000
IB1011S1500
IB1011S190
IB1011S250
IB1011S350
IB1011S70
IB1214M130
IB1214M150
IB1214M300
IB1214M32
IB1214M375
IB1214M55
IB1214M6
IB2729M25
IB2729M5
IB2731M110
IB2731MH110
IB2731MH25
IB2931MH155
IB2931MH55
IB2934M100
IB3135MH100
IB3135MH20
IB3135MH45
IB3135MH5
IB3135MH65
IB3135MH75
IB450S300
IB450S500
IDM165L650
IDM175CW300
IDM265L650
IDM30512CW100
IDM30512CW20
IDM30512CW50
IDM500CW120
IDM500CW150
IDM500CW200
IDM500CW300
IDM500CW80
ILD0506EL350
ILD0912M150HV
ILD0912M15HV
ILD0912M400HV
ILD0912M60
ILD1214M10
ILD1214M60
ILD2731M140
ILD2735M120
ILD2933M130
INA-51063
JDP2S01E
JDP2S01U
JDP2S02AFS
JDP2S02AS
JDP2S02T
JDP2S04E
JDS2S03S
KP2310R
KTK920*
KTK920BT
KTK920T
KV1835E
LTC5590
LTC5591
LTC5592
MA2S077
MA2S357
MA2S357
MA2S372
MA2S374
MA2SV01
MA357
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Agilent
Toshiba
Toshiba
Toshiba
Toshiba
Toshiba
Toshiba
Toshiba
Toko
KEC
KEC
KEC
Toko
Linear Technology
Linear Technology
Linear Technology
Standard
Panasonic
Panasonic
Panasonic
Panasonic
Renesas Electronics
Panasonic
BLA0912-250R
BLA6H0912-500
BLA1011-10
BLL6H0514LS-130
BLA6G1011LS-200RG
BLA6H1011-600
BLA1011S-200
BLA1011S-200R
BLA6G1011-200R
BLA1011-300
BLL6H1214-500
BLL6G1214L-250
BLL6G1214LS-250
BLL1214-250R
BLL6H1214L-250
BLL1214-35
BLL1214-250
BLS7G2729LS-350P
BLS7G2729L-350P
BLS6G2731-6G
BLS6G2731S-130
BLS6G2731S-120
BLS6G2933S-130
BLS2933-100
BLS7G2933S-150
BLS7G3135LS-350P
BLS6G3135-20
BLS6G3135S-120
BLS6G3135-120
BLS6G3135S-20
BLS7G3135L-350P
BLF578XR
BLF544
BLF1043
BLF369
BLF1046
BLF574XRS
BLF574
BLF574XR
BLF572XR
BLF572XRS
BLF573
BLF573S
BLF571
BLF988
BLL6H0514-25
BLU6H0410LS-600P
BLL6H0514L-130
BLU6H0410L-600P
BLL6H1214LS-250
BLL6H1214LS-500
BLS6G2731-120
BLS6G2735L-30
BLS6G2735LS-30
BGA2001
BAP65-02
BAP65-03
BAP51-02
BAP51-03
BAP63-02
BAP50-02
BA891
BAP64-04W
BF1108
BF1108
BF1108R
BB199
BGX7220
BGX7221
BGX7221
BA277
BB178
BB187
BB179
BB182
BB202
BB153
A&D
A&D
A&D
A&D
A&D
A&D
A&D
A&D
A&D
A&D
A&D
A&D
A&D
A&D
A&D
A&D
A&D
A&D
A&D
A&D
A&D
A&D
A&D
A&D
A&D
A&D
A&D
A&D
A&D
A&D
A&D
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
A&D
A&D
A&D
A&D
A&D
A&D
A&D
A&D
A&D
MMIC
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
BS diode
PIN diode
FET
FET
FET
Varicap
MMIC
MMIC
MMIC
BS diode
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
MA366
MA368
MA372
MA372
MA4CP101A
MA4P274-1141
MA4P275-1141
MA4P275CK-287
MA4P277-1141
MA4P278-287
MA4P789-1141
MA4P789ST-287
MAX19985A
MAX19995
MAX2634
MAX2657
MAX2658
MAX2659
MAX2667
MAX2687
MAX2694
MC7712
MC7716
MC7722
MC7726
MC-7831
MC7831-HA
MC-7831-HA
MC-7832
MC7832-HA
MC-7832-HA
MC-7833
MC-7836
MC-7836
MC-7846
MC-7847
MC7852
MC7866
MC-7882
MC-7883
MC-7884
MC-7891
MC7893
MC7893
MC-7893
MC7894
MC7894
MC-7894
MC7896
MC7896
MC-7896
MCH4009
MD7IC18120GNR1
MD7IC18120NR1
MD7IC2050GNR1
MD7IC21100GNR1
MD7IC21100NBR1
MD7IC21100NR1
MD7IC2250GNR1
MD7IC2250NBR1
MD7IC2250NR1
MD7IC2755GNR1
MD7IC2755NR1
MD8IC970GNR1
MD8IC970NR1
MDS60L
MGA631P8
MGA632P8
MGA632P8
MHVIC915NR2
MHW10186N
MHW10236N
MHW10247AN
MHW10276N
MHW1224
MHW1244
MHW1253LA
Panasonic
Panasonic
Panasonic
Panasonic
Panasonic
Panasonic
Panasonic
Panasonic
Panasonic
Panasonic
Panasonic
Panasonic
MAXIM
MAXIM
Maxim
Maxim
Maxim
Maxim
Maxim
Maxim
Maxim
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Sanyo
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Microsemi
Avago
Avago
Avago
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
BB148
BB131
BB149
BB149A
BAP65-03
BAP51-03
BAP65-03
BAP65-05
BAP70-03
BAP70-03
BAP1321-03
BAP1321-04
BGX7220
BGX7221
BGU6102
BGU8007
BGU7005
BGU7005
BGU8007
BGU7005
BGU7005
BGY785A
BGY787
BGY785A
BGY787
BGY885A
BGY1085A
BGY1085A
BGY887
CGY1041
CGY1041
BGY887B
BGY887B
CGY1047
CGD942C
CGD944C
BGY885A
BGD816L
BGD814
CGD942C
CGD944C
CGD1042H
CGD1042Hi
CGD982HCi
CGD1042H
CGD1044Hi
CGD985HCi
CDG1044H
CGD1046Hi
CGD987HCi
CGD1044H
BFG424F
BLF6G20-180RN
BLF6G20-230PRN
BLF7G20LS-200
BLF6G22-45
BLF6G22L-40BN
BLF6G22LS-40BN
BLF6G22LS-100
BLF6G22LS-130
BLF6G22LS-180PN
BLF6G27-100
BLF6G27-135
BLF8G10LS-400PGV
BLF8G10L-300P
BLA1011S-200R
BGU7051
BGU7052
BGU7053
BLF6G10LS-135RN
BGY1085A
CGY1043
CGD1044H
CGY1047
BGY67
BGY67A
BGY67A
Varicap
Varicap
Varicap
Varicap
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
MMIC
MMIC
MMIC
MMIC
MMIC
MMIC
MMIC
MMIC
MMIC
CATV PPA
CATV PPA
CATV PPA
CATV PPA
CATV PP
CATV PP
CATV PP
CATV PP
CATV PP
CATV PP
CATV PP
CATV PP
CATV PP
CATV PD
CATV PD
CATV PPA
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
WB trs 5-7
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
A&D
MMIC
MMIC
MMIC
Base station
CATV PP
CATV PP
CATV PD
CATV PP
CATV RA
CATV RA
CATV RA
112
NXP Semiconductors RF Manual 16th edition
Manufacturer
NXP type
Product
family
Manufacturer type
Manufacturer
NXP type
Product
family
MHW1254L
MHW1254LA
MHW1304L
MHW1304LA
MHW1304LAN
MHW1346
MHW1353LA
MHW1354LA
MHW7182B
MHW7182C
MHW7185C2
MHW7185CL
MHW7205C
MHW7205CL
MHW7205CLN
MHW7222
MHW7222A
MHW7222B
MHW7242A
MHW7272A
MHW7292
MHW7292A
MHW7292AN
MHW8182B
MHW8182C
MHW8182CN
MHW8185
MHW8185L
MHW8188AN
MHW8205
MHW820L
MHW8222BN
MHW8227A
MHW8227AN
MHW8247A
MHW8247AN
MHW8292
MHW8342
MHW8342N
MHW9182B
MHW9182C
MHW9182CN
MHW9186
MHW9186A
MHW9187N
MHW9188AN
MHW9188N
MHW9227AN
MHW9242A
MHW9247
MHW9247A
MHW9247AN
MHW9247N
MHWJ7185A
MHWJ7205A
MHWJ7292
MHWJ9182
MMBF4391
MMBF4392
MMBF4393
MMBF4860
MMBF5484
MMBFJ113
MMBFJ174
MMBFJ175
MMBFJ176
MMBFJ177
MMBFJ308
MMBFJ309
MMBFJ310
MMBFU310
MMBR5031L
MMBR5179L
MMBR571L
MMBR901L
MMBR911L
MMBR920L
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
BGY68
BGY68
BGY68
BGY68
BGY68
BGY67A
BGY67A
BGY68
BGY785A
BGY785A
BGD712
BGD712
BGD714
BGD714
BGD714
BGY787
BGY787
BGY787
BGE787B
BGE787B
BGE787B
BGE787B
BGE787B
BGY885A
BGY885A
BGY885A
BGD814
BGD812
CGD942C
BGD814
BGD814
BGY887
CGD942C
CGD942C
CGD944C
CGD944C
BGY887B
BGY888
CGY888C
BGY1085A
BGY1085A
BGY1085A
BGY885A
BGY885A
CGD942C
CGD942C
CGD942C
CGD942C
CGD1042
CGD944C
CGD944C
CGD944C
CGD944C
BGD712
BGD714
BGE787B
BGY1085A
PMBF4391
PMBF4392
PMBF4393
PMBFJ112
BFR31
PMBFJ113
PMBFJ174
PMBFJ175
PMBFJ176
PMBFJ177
PMBFJ308
PMBFJ309
PMBFJ310
PMBFJ310
BFS17
BFS17A
PBR951
BFR92A
BFR93A
BFR93A
CATV RA
CATV RA
CATV RA
CATV RA
CATV RA
CATV RA
CATV RA
CATV RA
CATV PPA
CATV PPA
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PPA
CATV PPA
CATV PPA
CATV PPA/HG
CATV PPA/HG
CATV PPA/HG
CATV PPA/HG
CATV PPA/HG
CATV PPA
CATV PPA
CATV PP
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PP
CATV PD
CATV PD
CATV PPA
CATV PD
CATV PPA
CATV PPA
CATV PP
CATV PPA
CATV PPA
CATV PP
CATV PPA
CATV PPA
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PPA/HG
CATV PPA
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
MMBR931L
MMBR941BL
MMBR941L
MMBR951AL
MMBR951L
MMBV105GLT1
MMBV109LT1
MMG2001NT1
MMG2001T1
MMG3004NT1
MMG3004NT1
MMG3004NT1
MMG3014
MMG3014
MMG3014
MMG3014
MRF282ZR1
MRF577
MRF5811L
MRF5P21045NR1
MRF5S9100NBR1
MRF5S9101NBR1
MRF5S9150HR3
MRF5S9150HSR3
MRF6P24190HR6
MRF6P24190HR6
MRF6P27160HR5
MRF6P27160HR5
MRF6P27160HR6
MRF6P27160HR6
MRF6S18060NR1
MRF6S18060NR1
MRF6S20010GNR1
MRF6S20010NR1
MRF6S21050LR3
MRF6S21050LSR3
MRF6S21100HR3
MRF6S21140HR3
MRF6S21190HSR3
MRF6S24140HR3
MRF6S24140HR3
MRF6S24140HSR3
MRF6S24140HSR3
MRF6S27015GNR1
MRF6S27015NR1
MRF6S27085HR3
MRF6S27085HR3
MRF6S27085HR5
MRF6S27085HSR3
MRF6S27085HSR5
MRF6V10010NR4
MRF6V12250HR3
MRF6V12250HR5
MRF6V12250HSR3
MRF6V12500HR5
MRF6V12500HSR3
MRF6V12500HSR5
MRF6V13250HR3
MRF6V13250HR3
MRF6V13250HR3
MRF6V13250HR3
MRF6V13250HR5
MRF6V13250HR5
MRF6V13250HR5
MRF6V13250HSR3
MRF6V13250HSR3
MRF6V13250HSR3
MRF6V13250HSR5
MRF6V13250HSR5
MRF6V13250HSR5
MRF6V14300HR3
MRF6V14300HR5
MRF6V14300HSR3
MRF6V14300HSR3
MRF6V14300HSR5
MRF6V14300HSR5
MRF6V2010NBR1
Freescale
Freescale
Freescale
Freescale
Freescale
ONSemicond.
ONSemicond.
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
BFT25A
PBR941
PBR941
PBR951
PBR951
BB156
BB148
BGD816L
BGD816L
BGA7027
BGA7127
BGA7127
BGA7024
BGA7124
BGA7124
BGA7204
BLF7G20LS-250P
PRF957
BFG93A/X
BLF6G22LS-180RN
BLF6G10-135RN
BLF6G10LS-200RN
BLF6G10-160RN
BLF6G10-200RN
BLF6G27-10G
BLF7G24LS-160P
BLF7G27L-150P
BLF8G27LS-140
BLF7G27L-90P
BLF8G27LS-140G
BLF6G20-110
BLF6G20-180PN
BLF6G22LS-75
BLF6G22S-45
BLF7G22L-130
BLF7G22L-160
BLF7G22LS-130
BLF7G22LS-160
BLF8G22LS-200GV
BLF7G24L-100
BLF7G27L-75P
BLF7G24L-140
BLF7G27LS-75P
BLF7G22LS-250P
BLF6G27-10
BLF7G27LS-100
BLF8G27LS-200GV
BLF8G27LS-200PGV
BLF8G27LS-280PGV
BLF7G27L-135
BLA1011-200R
BLA0912-250
BLA0912-250R
BLA6H0912-500
BLA1011-10
BLA1011-2
BLA1011-200
BLF6G15L-500H
BLF6G15LS-250PBRN
BLL6G1214LS-250
BLL6H1214LS-500
BLF6G15LS-500H
BLF6G15LS-40RN
BLL6H1214-500
BLF6G13L-250P
BLF7G20L-90P
BLL6H1214L-250
BLF6G13LS-250P
BLF7G20LS-90P
BLL6H1214LS-250
BLL1214-250
BLL1214-250R
BLF7G15LS-200
BLL1214-35
BLF7G15LS-300P
BLL6G1214L-250
BLF573S
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
Varicap
Varicap
CATV PD
CATV PD
MMIC
MMIC
MMIC
MMIC
MMIC
MMIC
MMIC
Base station
WB trs 1-4
WB trs 1-4
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
A&D
A&D
A&D
A&D
A&D
A&D
A&D
Base station
Base station
A&D
A&D
Base station
Base station
A&D
Base station
Base station
A&D
Base station
Base station
A&D
A&D
A&D
Base station
A&D
Base station
A&D
Broadcast
NXP Semiconductors RF Manual 16th edition
113
Cross-references
& replacements
Manufacturer type
Manufacturer type
Manufacturer
NXP type
Product
family
Manufacturer type
Manufacturer
NXP type
Product
family
MRF6V2010NBR5
MRF6V2010NR1
MRF6V2150NBR1
MRF6V2150NBR5
MRF6V2150NR1
MRF6V3090NBR1
MRF6V3090NBR5
MRF6V3090NR1
MRF6V3090NR5
MRF6VP11KHR5
MRF6VP11KHR6
MRF6VP21KHR5
MRF6VP21KHR6
MRF6VP2600HR5
MRF6VP3091NBR1
MRF6VP3091NBR5
MRF6VP3091NR1
MRF6VP3091NR5
MRF6VP3450HR5
MRF6VP3450HR6
MRF6VP3450HSR5
MRF6VP3450HSR6
MRF6VP41KHR5
MRF6VP41KHR6
MRF6VP41KHR7
MRF6VP41KHSR5
MRF6VP41KHSR6
MRF6VP41KHSR7
MRF7P20040HR3
MRF7P20040HSR3
MRF7S15100HR3
MRF7S15100HSR3
MRF7S15100HSR5
MRF7S18170HSR3
MRF7S21080HSR3
MRF7S21110HR3
MRF7S21110HSR3
MRF7S27130HR3
MRF7S27130HSR3
MRF7S35015HSR3
MRF7S35120HSR3
MRF7S38075HR3
MRF8P18265HR5
MRF8P18265HR6
MRF8P18265HSR5
MRF8P18265HSR6
MRF8P20160HR3
MRF8P20160HR5
MRF8P20160HSR3
MRF8P20160HSR5
MRF8P20161HSR3
MRF8P20161HSR5
MRF8P23080HR3
MRF8P23080HR5
MRF8P23080HSR3
MRF8P23080HSR5
MRF8P23160WHR3
MRF8P23160WHR5
MRF8P23160WHSR3
MRF8P23160WHSR5
MRF8P26080HR3
MRF8P26080HR5
MRF8P26080HSR3
MRF8P26080HSR5
MRF8P29300HR5
MRF8P29300HR5
MRF8P29300HR6
MRF8P29300HR6
MRF8P29300HSR5
MRF8P29300HSR5
MRF8P29300HSR6
MRF8P29300HSR6
MRF8P8300HR5
MRF8P8300HR6
MRF8P8300HSR5
MRF8P8300HSR6
MRF8P9040GNR1
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
BLF574
BLF574XR
BLF574XRS
BLF578
BLF578XR
BLF647PS
BLF202
BLF242
BLF244
BLF145
BLF147
BLF175
BLF177
BLF647P
BLF245
BLF245B
BLF246
BLF878
BLF879P
BLF884P
BLF884PS
BLF888
BLF248
BLF369
BLF571
BLF572XR
BLF572XRS
BLF573
BLF6G22-180PN
BLF6G22-180RN
BLF6G15L-250PBRN
BLF6G15L-40BRN
BLF6G15L-40RN
BLF6G20-40
BLF8G22LS-270GV
BLF8G22LS-400PGV
BLM7G22S-60PB
BLF6G27-45
BLF6G27-75
BLS6G3135S-20
BLS7G3135L-350P
BLF6G38-10
BLF6G20-45
BLF6G20-75
BLF6G20LS-110
BLF6G20LS-140
BLF8G20LS-270GV
BLF8G20LS-270PGV
BLF7G20L-200
BLF7G20L-250P
BLF8G20L-200V
BLF8G20LS-200V
BLM7G22S-60PBG
BLD6G21L-50
BLD6G21LS-50
BLM6G22-30
BLM6G22-30G
BLD6G22L-50
BLD6G22LS-50
BLF6G22L-40P
BLF6G27L-40P
BLF6G27L-50BN
BLF6G27LS-100
BLF6G27LS-135
BLF7G27LS-140
BLS6G2731-120
BLF7G27LS-150P
BLS6G2731-6G
BLF7G27LS-90P
BLS6G2731S-120
BLF7G27LS-90PG
BLS6G2731S-130
BLF6G10LS-160RN
BLF6G10LS-260PRN
BLF6G10S-45
BLF6H10L-160
BLF6G10-45
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
A&D
A&D
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
A&D
Base station
A&D
Base station
A&D
Base station
A&D
Base station
Base station
Base station
Base station
Base station
MRF8P9040NBR1
MRF8P9040NR1
MRF8S18120HR3
MRF8S18120HR5
MRF8S18120HSR3
MRF8S18120HSR5
MRF8S18260HR5
MRF8S18260HR6
MRF8S18260HSR5
MRF8S18260HSR6
MRF8S23120HR3
MRF8S23120HR5
MRF8S23120HSR3
MRF8S23120HSR5
MRF8S26060HR3
MRF8S26060HSR5
MRF8S8260HR3
MRF8S8260HR5
MRF8S8260HSR3
MRF8S8260HSR5
MRF917
MRF927
MRF9411L
MRF947
MRF947A
MRF9511L
MRF957
MRFE6P3300HR3
MRFE6P3300HR5
MRFE6P9220HR3
MRFE6S8046GNR1
MRFE6S8046NR1
MRFE6S9125NBR1
MRFE6S9125NR1
MRFE6S9160HSR3
MRFE6S9205HSR3
MRFE6VP8600HR5
MRFE6VP8600HR6
MRFE6VP8600HSR5
MRFG35003ANT1
MS1078
MS1281
MS1336
MS1337
MS1504
MS1505
MS1506
MS2267
MS2272
MT4S200T
MT4S200U
MT4S34U
MV2109G
MW6S004NT1
MW6S004NT1
MW7IC008NT1
MW7IC2020NT1
MW7IC2425GNR1
MW7IC2425GNR1
MW7IC2425NBR1
MW7IC2425NBR1
MW7IC2425NR1
MW7IC2425NR1
MW7IC2725GNR1
MW7IC2725NBR1
MW7IC2725NR1
MW7IC2750GNR1
MW7IC2750NBR1
MW7IC2750NR1
MW7IC3825GNR1
MW7IC3825NBR1
MW7IC3825NR1
MW7IC915NT1
MWE6IC9100NBR1
NESG2021M05
NESG2031M05
NESG2101M05
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Toshiba
Toshiba
Toshiba
ONSemicond.
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Renesas Electronics
Renesas Electronics
Renesas Electronics
BLF6G10L-260PBM
BLF6G10L-260PRN
BLF6G20LS-180RN
BLF6G20LS-75
BLF6G20S-230PRN
BLF6G20S-45
BLF7G20LS-140P
BLF7G20LS-260A
BLF7G21L-160P
BLF7G21LS-160
BLF6G22LS-40P
BLF7G22L-200
BLF7G22L-250P
BLF7G22LS-200
BLF7G27L-200PB
BLF8G27LS-140V
BLF8G10L-160V
BLF8G10LS-160V
BLF8G10LS-200GV
BLF8G10LS-270GV
BFQ67W
BFS25A
BFG520/X
BFS520
PRF947
BFG540/X
PRF957
BLF888A
BLF578XRS
BLF7G10LS-250
BLF8G10LS-300P
BLF7G10L-250
BLF6H10LS-160
BLF8G10L-160
BLM6G10-30
BLM6G10-30G
BLF888AS
BLF888B
BLF888BS
BLU6H0410L-600P
BLF145
BLF177
BLF175
BLF147
BLF248
BLF178XRS
BLF178XR
BLA1011-10
BLA6H0912-500
BFG424W
BFG425W
BFG410W
BB182LX
BLF6G21-10G
BLF1043
BLF988
BLF7G21LS-160P
BLF7G24L-160P
BLF8G24L-200P
BLF7G24LS-100
BLF8G24LS-200P
BLF7G24LS-140
BLS7G2325L-105
BLF6G27LS-40P
BLF6G27LS-50BN
BLF6G27LS-75
BLF6G27S-45
BLF7G27L-100
BLF7G27L-140
BLF6G38-100
BLF6G38-10G
BLF6G38-25
BLF6G10L-40BRN
BLF8G10LS-160
BFU610F
BFU630F
BFU660F
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
Broadcast
Broadcast
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Broadcast
Broadcast
Broadcast
A&D
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
A&D
A&D
WB trs 5-7
WB trs 5-7
WB trs 5-7
Varicap
Base station
Broadcast
Broadcast
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
WB trs 5-7
WB trs 5-7
WB trs 5-7
114
NXP Semiconductors RF Manual 16th edition
Manufacturer
NXP type
Product
family
Manufacturer type
Manufacturer
NXP type
Product
family
NESG2101M05
NESG2101M05
NESG3031M05
NESG3032M14
NJG1140KA1
PRF947B
PRF947B
PTF 080101S - 10 W
PTF 081301E
PTF 081301F
PTF 140451E
PTF 140451F
PTF 141501E - 150 W
PTFA 041501E
PTFA 041501F
PTFA 043002E - 300 W
PTFA 043002E - 300 W
PTFA 070601E - 60 W
PTFA 070601F - 60 W
PTFA 071701E - 170 W
PTFA 071701F - 170 W
PTFA 072401EL - 240 W
PTFA 072401FL - 240 W
PTFA 072401FL - 240 W
PTFA 080551E - 55 W
PTFA 080551F - 55 W
PTFA 081501E - 150 W
PTFA 081501F - 150 W
PTFA 082201E - 220 W
PTFA 082201F - 220 W
PTFA 091201E - 120 W
PTFA 091201F - 120 W
PTFA 142401EL - 240 W
PTFA 142401FL - 240 W
PTFA 210601E - 60 W
PTFA 210601F - 60 W
PTFA 210701E - 70 W
PTFA 210701F - 70 W
PTFA 211801E - 180 W
PTFA 211801F - 180 W
PTFA 212001E - 200 W
PTFA 212001F - 200 W
PTFA 240451E - 45 W
PTFA 241301E - 130 W
PTFA 241301F - 130 W
PTFA 260451E - 45 W
PTFA 261301E - 130 W
PTFA 261301F - 130 W
PTFB 082817 FH - 250 W
PTFB 082817 FH - 250 W
PTFB 091507FH - 150 W
PTFB 093608FV - 360 W
PTFB 210801FA - 80 W
PTFB 211501E - 150 W
PTFB 211501F - 150 W
PTFB 211503EL - 150 W
PTFB 211503FL - 150 W
PTFB 211803EL - 180 W
PTFB 211803FL - 180 W
PTFB 212503EL - 240 W
PTFB 212503FL - 240 W
PTFB 213004F - 300 W
PTFB 241402F - 2x70W
PTFB 241402F - 2x70W
PTMA 080152M - 20 W
PTMA 080302M - 30 W
PTMA 080304M - 2 X 15 W
PTMA 180402M - 40 W
PTMA 210152M - 20 W
PTMA 210452EL - 45 W
PTMA 210452FL - 45 W
R0605250L
R0605250L
R0605300L
R0605300L
R1005250L
R2005200P12
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
JRC
Motorola
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
RFMD
Standard
Standard
RFMD
RFMD
RFMD
BFU760F
BFU790F
BFU730F
BFU725F
BGU7044
PRF947
PRF947
BLF8G10L-300P
BLF8G10LS-300P
BLF7G10L-250
BLF1046
BLF145
BLF147
BLF6G10LS-200RN
BLF6G10-135RN
BLF6G21-10G
BLF1043
BLF6G10L-260PRN
BLF6G10L-40BRN
BLF6G10LS-135RN
BLF6G10LS-160RN
BLF6G10LS-260PRN
BLF6G10S-45
BLF6H10L-160
BLF6H10LS-160
BLF8G10L-160
BLF8G10L-160V
BLF8G10LS-160V
BLF8G10LS-200GV
BLF8G10LS-270GV
BLM6G10-30
BLM6G10-30G
BLF175
BLF177
BLF6G20-40
BLF6G20-45
BLF6G20-75
BLF6G20LS-110
BLF6G20LS-140
BLF6G20LS-180RN
BLF6G20LS-75
BLF6G20S-230PRN
BLF6G27-75
BLF6G27L-40P
BLF6G27L-50BN
BLF6G27LS-100
BLF6G27LS-135
BLF6G27LS-40P
BLF6G10L-260PBM
BLF8G10LS-400PGV
BLF7G10LS-250
BLF8G10LS-160
BLF6G20S-45
BLF7G20LS-140P
BLF7G20LS-260A
BLF7G21L-160P
BLF7G21LS-160
BLF7G21LS-160P
BLF8G20L-200V
BLF8G20LS-200V
BLF8G20LS-270GV
BLF8G20LS-270PGV
BLF7G24L-140
BLF6G27-45
BLF6G10-160RN
BLF6G10-200RN
BLF6G10-45
BLF6G20-110
BLF6G20-180PN
BLF6G20-180RN
BLF6G20-230PRN
BGS67A
BGY66B
BGY68
BGY68
BGY66B
BGY67
WB trs 5-7
WB trs 5-7
WB trs 5-7
WB trs 5-7
MMIC
WB trs 1-4
WB trs 1-4
Base station
Base station
Base station
Broadcast
Broadcast
Broadcast
Base station
Base station
Base station
Broadcast
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Broadcast
Broadcast
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
CATV RA
CATV RA
CATV RA
CATV RA
CATV RA
CATV RA
R2005240
R2005240
R2005240P12
R2005350L
RF3826
RF3863
RF3863
RF3863
RF3928
RF3928B
RF3931
RF3931
RF3932
RF3933
RF3934
RFFC2072
RFG1M09090
RFG1M09180
RFG1M20090
RFG1M20180
RFHA1000
RFHA1003
RFHA1006
RFHA3942
RN142G
RN142S
RN242CS
RN731V
RN739D
RN739F
S10040200P
S10040220GT
S10040220P
S10040230GT
S10040240P
S10040280GT
S10040340
S595T
S595TR
S595TRW
S7540185
S7540215
S8740180GT
S8740190
S8740190
S8740200P
S8740220
S8740220GT
S8740220P
S8740230
S8740240GT
S8740240P
S8740240P12
S8740260GT
S8740280GT
S8740340
S8740340PT
SD1013
SD1013-03
SD1014-06
SD1526-01
SDV701Q
SDV704Q
SDV705Q
SGA8343Z
SKY65048
SKY65066
SKY65084
SMA3101
SMA3101
SMA3103
SMA3103
SMA3107
SMA3107
SMA3109
SMA3109
SMA3111
Standard
RFMD
RFMD
RFMD
RFMD
RFMD
RFMD
RFMD
RFMD
RFMD
RFMD
RFMD
RFMD
RFMD
RFMD
RFMD
RFMD
RFMD
RFMD
RFMD
RFMD
RFMD
RFMD
RFMD
Rohm
Rohm
Rohm
Rohm
Rohm
Rohm
RFMD
RFMD
RFMD
RFMD
RFMD
RFMD
RFMD
Vishay
Vishay
Vishay
Standard
Standard
RFMD
Standard
RFMD
RFMD
Standard
RFMD
RFMD
Standard
RFMD
RFMD
RFMD
RFMD
RFMD
RFMD
RFMD
Microsemi
Microsemi
Microsemi
Microsemi
AUK
AUK
AUK
Sirenza
Skyworks
Skyworks
Skyworks
Sanyo
Sanyo
Sanyo
Sanyo
Sanyo
Sanyo
Sanyo
Sanyo
Sanyo
BGY67A
BGY67A
BGY67A
BGR269
BLF7G24L-100
BGU7051
BGU7052
BGU7053
BLS7G2933S-150
BLS6G2933S-130
BLF6G38-10
BLS6G3135-120
BLF6G38-100
BLF6G38-10G
BLF6G38-25
BGX721x
BLF6G10-200RN
BLF6G10-45
BLF6G20-110
BLF6G20-180PN
BLF6G10-135RN
BLF6G10LS-200RN
BLF6G10-160RN
BLS7G3135LS-350P
BAP1321-03
BAP1321-02
BAP51LX
BAP50-03
BAP50-04
BAP50-04W
CGY1041
CGY1041
CGY1041
CGY1043
CGY1043
CGY1047
CGY1034
BF1105
BF1105R
BF1105WR
BGY785A
BGY787
BGY885A
BGD812
BGY885A
BGY887
BGD814
BGY887
BGY887
BGD816L
BGY887
BGY887
BGY887
CGY887A
CGY887B
CGY888C
CGY888C
BLF178P
BLF174XRS
BLF174XR
BLA0912-250R
BB179
BB178
BB182
BFG425W
BGU7051
BGU7053
BGU7052
BGA2851
BGA2851
BGA2867
BGA2867
BGA2803
BGA2803
BGA2817
BGA2817
BGA2851
CATV RA
CATV RA
CATV RA
CATV RA
Base station
MMIC
MMIC
MMIC
A&D
A&D
Base station
A&D
Base station
Base station
Base station
MMIC
Base station
Base station
Base station
Base station
Base station
Base station
Base station
A&D
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
CATV PP
CATV PP
CATV PP
CATV PP
CATV PP
CATV PP
CATV PP
FET
FET
FET
CATV PPA
CATV PPA
CATV PP
CATV PD
CATV PP
CATV PP
CATV PD
CATV PP
CATV PP
CATV PD
CATV PP
CATV PP
CATV PP
CATV PP
CATV PP
CATV PP
CATV PP
Broadcast
Broadcast
Broadcast
A&D
Varicap
Varicap
Varicap
WB trs 5-7
MMIC
MMIC
MMIC
MMIC
MMIC
MMIC
MMIC
MMIC
MMIC
MMIC
MMIC
MMIC
NXP Semiconductors RF Manual 16th edition
115
Cross-references
& replacements
Manufacturer type
Manufacturer type
Manufacturer
NXP type
Product
family
SMA3111
SMA3113
SMA3113
SMA3117
SMA3117
SMP1302-004
SMP1302-005
SMP1302-011
SMP1302-074
SMP1302-075
SMP1302-079
SMP1304-001
SMP1304-011
SMP1307-001
SMP1307-011
SMP1320-004
SMP1320-011
SMP1320-074
SMP1321-001
SMP1321-005
SMP1321-011
SMP1321-075
SMP1321-079
SMP1322-004
SMP1322-011
SMP1322-074
SMP1322-079
SMP1340-011
SMP1340-079
SMP1352-011
SMP1352-079
SMV1235-004
SMV1236-004
SST111
SST112
SST113
SST174
SST175
SST176
SST177
SST201
SST202
SST203
SST308
SST309
SST310
SST4391
SST4392
SST4393
SST4856
SST4857
SST4859
SST4860
SST4861
SVC201SPA
SXA-389B
SXA-389B
SXA-389B
SXA-389B
SXB-4089
SXB-4089
T1G4005528-FS
T1G4005528-FS
T1G4005528-FS
T1L2003028-SP
T1P2701012-SP
TAN150
TAN250A
TAN300
TAN350
TAN75A
TBB1016
TMF3201J
TMF3202Z
TMPF4091
TMPF4092
TMPF4093
Sanyo
Sanyo
Sanyo
Sanyo
Sanyo
Skyworks
Skyworks
Skyworks
Skyworks
Skyworks
Skyworks
Skyworks
Skyworks
Skyworks
Skyworks
Skyworks
Skyworks
Skyworks
Skyworks
Skyworks
Skyworks
Skyworks
Skyworks
Skyworks
Skyworks
Skyworks
Skyworks
Skyworks
Skyworks
Skyworks
Skyworks
Skyworks
Skyworks
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Sanyo
RFMD
RFMD
RFMD
RFMD
RFMD
RFMD
Triquint
Triquint
Triquint
Triquint
Triquint
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Renesas Electronics
AUK
AUK
Standard
Standard
Standard
BGA2851
BGA2869
BGA2869
BGA2869
BGA2869
BAP50-05
BAP50-04
BAP50-03
BAP50-05W
BAP50-04W
BAP50-02
BAP70-03
BAP70-03
BAP70-03
BAP70-03
BAP65-05
BAP65-03
BAP65-05W
BAP1321-03
BAP1321-04
BAP1321-03
BAP1321-04
BAP1321-02
BAP65-05
BAP65-03
BAP65-05W
BAP65-02
BAP63-03
BAP63-02
BAP64-03
BAP64-02
BB181
BB156
PMBFJ111
PMBFJ112
PMBFJ113
PMBFJ174
PMBFJ175
PMBFJ176
PMBFJ177
BFT46
BFR31
BFR30
PMBFJ308
PMBFJ309
PMBFJ310
PMBF4391
PMBF4392
PMBF4393
BSR56
BSR57
BSR56
BSR57
BSR58
BB187
BGA7024
BGA7124
BGA7124
BGA7204
BGA7027
BGA7127
BLF6G38-25
BLS6G3135-120
BLS6G3135-20
BLL6H0514L-130
BLS6G2731-120
BLS7G2325L-105
BLL6H1214LS-500
BLL6H1214LS-250
BLL6H1214L-250
BLL6H1214-500
BF1204
BF1204
BF1202WR
PMBF4391
PMBF4392
PMBF4393
MMIC
MMIC
MMIC
MMIC
MMIC
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
Varicap
Varicap
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
Varicap
MMIC
MMIC
MMIC
MMIC
MMIC
MMIC
Base station
A&D
A&D
A&D
A&D
A&D
A&D
A&D
A&D
A&D
FET
FET
FET
FET
FET
FET
116
NXP Semiconductors RF Manual 16th edition
Manufacturer type
Manufacturer
NXP type
Product
family
TMPF4391
TMPF4392
TMPF4393
TMPFB246A
TMPFB246B
TMPFB246C
TMPFJ111
TMPFJ112
TMPFJ113
TMPFJ174
TMPFJ175
TMPFJ176
TMPFJ177
TPR400
TPR400
TPR400A
TPR500
TPR500A
TPR700
TRF370315
TRF370417
TRF3705
TSDF54040
TSDF54040-GS08
TSDF54040X-GS08
TSDF54040XR-GS08
uPC2709
uPC2711
uPC2712
uPC2745
uPC2746
uPC2748
uPC2771
uPC3224
uPC3224
uPC3226
uPC3226
uPC3227
uPC3227
uPC3232
uPC3232
uPC3240
uPC3240
uPC3241
uPC3241
uPC8112
UPC8230TU
UPC8236T6N
uPD5740T6N
uPD5756T6N
UTV005
UTV005P
UTV010
UTV020
UTV040
UTV080
UTV120
UTV200
UTV8100B
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
TI
TI
TI
Vishay
Vishay
Vishay
Vishay
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
PMBF4391
PMBF4392
PMBF4393
BSR56
BSR57
BSR58
PMBFJ111
PMBFJ112
PMBFJ113
PMBFJ174
PMBFJ175
PMBFJ176
PMBFJ177
BLA1011-2
BLA1011-200
BLA6G1011-200R
BLL1214-250
BLA6H1011-600
BLA6G1011LS-200RG
BGX710x
BGX710x
BGX710x
BF1102
BF1102
BF1102
BF1102R
BGA2709
BGA2711
BGA2712
BGA2001
BGA2001
BGA2748
BGA2771
BGA2851
BGA2851
BGA2867
BGA2867
BGA2851
BGA2851
BGA2869
BGA2869
BGA2802
BGA2802
BGA2817
BGA2817
BGA2022
BGU7007
BGU8007
BGU7045
BGU7045
BLF888B
BLF888AS
BLF888A
BLF888
BLF884PS
BLF884P
BLF879P
BLF878
BLF861A
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
A&D
A&D
A&D
A&D
A&D
A&D
MMIC
MMIC
MMIC
FET
FET
FET
FET
MMIC
MMIC
MMIC
MMIC
MMIC
MMIC
MMIC
MMIC
MMIC
MMIC
MMIC
MMIC
MMIC
MMIC
MMIC
MMIC
MMIC
MMIC
MMIC
MMIC
MMIC
MMIC
MMIC
MMIC
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
5.2
Cross-references: NXP discontinued types versus NXP replacement types
In alphabetical order of manufacturer discontinued type
Abbreviations:
BS diode
Band switch diode
CATV
Community antenna television system
FET
Field effect transistor
Varicap
Varicap diode
WB trs
Wideband transistor
RFP trs
RF Power transistor
Product family NXP
Replacement type NXP
NXP discontinued type
Product family NXP
Replacement type NXP
BA277-01
BS diode
BS diode
BS diode
PIN diode
PIN diode
PIN diode
PIN diode
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
WB trs
WB trs
FET
FET
FET
WB trs
WB trs
WB trs
WB trs
WB trs
WB trs
WB trs
WB trs
WB trs
WB trs
WB trs
WB trs
WB trs
WB trs
WB trs
WB trs
WB trs
WB trs
BA277
BA277
BA591
BAP142LX
BAP51LX
BAP51LX
BAP55LX
BB152
BB145B
BB145B
BB135
BB187
BB178LX
BB179BLX
BB179LX
BB181
BB182
BB182
BB187LX
BB149
BB202
BB207
BBY40
BF1211
BF1211R
BF1211WR
BF1203
BF1210
BF1210
BF1208
BF545A
BF545B
BF545C
BFS17
BFS17
BF861A
BF861C
BF992
BFM505
BFM520
BFM505
BFM520
BFS17A
BFG198
BFG198
BFG25AW/X
BFG410W
BFG425W
BFG505/X
BFG505
BFG520W/X
BFG590/X
BFG590
BFG590
BFG67
BFG92A/X
BFG92A/XR
BFG93A/XR
BFQ34/01
BFR92
BFR92AR
BFR92AT
BFR93
BFR93AT
BFR93R
BFU510
BFU540
BFU725F
BGA2031
BGD502
BGD602D
BGD702
BGD702D
BGD702D/08
BGD702N
BGD704
BGD704N
BGD802
BGD802N
BGD802N/07
BGD804
BGD804N
BGD804N/02
BGD902
BGD902L
BGD904
BGD904L
BGD906
BGE788
BGE847BO/FC
BGE847BO/FC0
BGE847BO/FC1
BGE847BO/SC
BGE847BO/SC0
BGE887BO/FC
BGE887BO/FC1
BGE887BO/SC
BGO807C
BGO807CE
BGO827
BGO827/SCO
BGO847/FC0
BGO847/FC01
BGO847/SC0
BGQ34/01
BGU2003
BGX885/02
BGY1085A/07
BGY585A
BGY587
BGY587B
BGY588N
WB trs
WB trs
WB trs
WB trs
WB trs
WB trs
WB trs
WB trs
WB trs
WB trs
WB trs
WB trs
WB trs
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
WB trs
WB trs
CATV
CATV
CATV
CATV
CATV
CATV
BFG92A/X
BFG93A/X
BFG35
BFR92A
BFR92A
BFR92AW
BFR92A
BFR93AW
BFR93A
BFU725F/N1
BFU725F/N1
BFU725F/N1
BGA2031/1
BGD712
BGD712
BGD712
BGD712
BGD712
BGD712
BGD714
BGD714
BGD812
BGD812
BGD812
BGD814
BGD814
BGD814
BGD812
BGD812
BGD814
BGD814
CGD942C
BGE788C
BGO827/SC0
BGO827/SC0
BGO827/SC0
BGO827/SC0
BGO827/SC0
BGO827/SC0
BGO827/SC0
BGO827/SC0
BGO807C/FCO
BGO807CE/SCO
BGO807CE/FCO
BGO807CE/SCO
BGO827/SC0
BGO827/SC0
BGO827/SC0
BFG35
BGA2003
BGX885N
BGY1085A
BGY785A
BGY787
BGE787B
BGY588C
BA278
BA792
BAP142L
BAP51-01
BAP51L
BAP55L
BB132
BB145
BB145B-01
BB151
BB157
BB178L
BB179BL
BB179L
BB181LX
BB182B
BB182LX
BB187L
BB190
BB202LX
BB804
BBY42
BF1101
BF1101R
BF1101WR
BF1203
BF1205
BF1205C
BF1206F
BF245A
BF245B
BF245C
BF689K
BF763
BF851A
BF851C
BF992/01
BFC505
BFC520
BFET505
BFET520
BFG17A
BFG197
BFG197/X
BFG25AW/XR
BFG410W/CA
BFG425W/CA
BFG505/XR
BFG505W/XR
BFG520W/XR
BFG590/XR
BFG590W
BFG590W/XR
BFG67/XR
BFG92A
NXP Semiconductors RF Manual 16th edition
Cross-references
& replacements
NXP discontinued type
117
NXP discontinued type
Product family NXP
Replacement type NXP
NXP discontinued type
Product family NXP
Replacement type NXP
BGY66B/04
BGY67/04
BGY67/09
BGY67/14
BGY67/19
BGY67A/04
BGY67A/14
BGY68/01
BGY685A
BGY685AD
BGY685AL
BGY687
BGY687B
BGY687B/02
BGY785A/07
BGY785A/09
BGY785AD
BGY785AD/06
BGY785AD/8M
BGY787/02
BGY787/07
BGY787/09
BGY847BO/SC
BGY883
BGY887/02
BGY887BO/SC
BLC6G22-100
BLC6G22-100
BLF1822-10
BLF2043
BLF2045
BLF3G22-30
BLF4G08LS-160A
BLF4G08LS-160A
BLF6G10-135RN
BLF6G10-160RN
BLF6G10-160RNL
BLF6G20-180RN
BLF6G20-40
BLF6G20S-230PRN
BLF6G22-180RN
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
RFP trs
RFP trs
RFP trs
RFP trs
RFP trs
RFP trs
RFP trs
RFP trs
RFP trs
RFP trs
RFP trs
RFP trs
RFP trs
RFP trs
RFP trs
BGY66B
BGY67
BGY67
BGY67
BGY67
BGY67A
BGY67A
BGY68
BGY785A
BGY785A
BGY785A
BGY787
BGE787B
BGE787B
BGY785A
BGY785A
BGY785A
BGY785A
BGY885A
BGY787
BGY787
BGY787
BGO827/SC0
BGY885A
BGY887
BGO827/SC0
BLF6G22-100
BLF6G22LS-100
BLF6G21-10G
BLF6G21-10G
BLF6G20-45BLF6G22-45
BLF6G22-45
BLF6G10LS-160RN
BLF6G10LS-160RN
BLF6G10LS-135RN
BLF6G10LS-160RN
BLF6G10-200RN
BLF7G20LS-200
BLF6G20-45
BLF7G20LS-250P
BLF7G22LS-200
BLF6G22LS-180PN
BLF6G22LS-75
BLF6G27-10
BLF6G27-10
BLF6G27-135
BLF6G27LS-135
BLF6G27LS-135
BLF6G27LS-75S
BLF6G27LS-75S
BLF6G38-10
BLF6G38-10
BLS2731-110
BLS2731-110T
BLS2731-20
BLS2731-50
CGD1042
CGD1044
CGD914
CGY887A
CGY887B
GD923
J108
J109
J110
J111
J112
J113
J174
J175
J176
J177
OM7650
OM7670
ON4831-2
ON4876
ON4890
ON4990
PMBT3640/AT
PN4392
PN4393
TFF1004HN
RFP trs
RFP trs
RFP trs
RFP trs
RFP trs
RFP trs
RFP trs
RFP trs
RFP trs
RFP trs
RFP trs
RFP trs
RFP trs
RFP trs
RFP trs
CATV
CATV
CATV
CATV
CATV
CATV
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
CATV
CATV
CATV
CATV
CATV
CATV
WB trs
FET
FET
Satellite IC
BLF7G22LS-200
BLF7G22LS-100
BLF6G27-10G
BLF6G27-10G
BLF7G27L-135
BLF7G27LS-140
BLF7G27LS-140
BLF6G27LS-75
BLF6G27LS-75
BLF6G38-10G
BLF6G38-10G
BLS6G2731-120
BLS6G2731-120
BLS6G2731-6G
BLS6G2731-6G
CGD1042H
CGD1044H
CGD1042H
CGY1043
CGY1047
CGD942C
PMBFJ108
PMBFJ109
PMBFJ110
PMBFJ111
PMBFJ112
PMBFJ113
PMBFJ174
PMBFJ175
PMBFJ176
PMBFJ177
BGY588C
BGE788C
BGY885A
BGY1085A
BGD712
BGD885
BFS17
PMBF4392
PMBF4393
TFF1014HN
118
NXP Semiconductors RF Manual 16th edition
6. Packing and packaging information
Packing quantities per package with relevant ordering code
Package
Package dimensions
L x W x H (mm)
Packing
quantity
Product
12NC ending
Packing
method
SOD323/SC-76
1.7 x 1.25 x 0.9
3,000
10,000
115
135
8 mm tape and reel
8 mm tape and reel
SOD523/SC-79
1.2 x 0.8 x 0.6
3,000
10,000
8,000
20,000
115
135
315
335
8 mm tape and reel
8 mm tape and reel
2 mm pitch tape and reel
2 mm pitch tape and reel
SOD882D
1.0 x 0.6 x 0.4
10,000
315
reel
SOT23
2.9 x 1.3 x 0.9
3,000
10,000
215
235
8 mm tape and reel
8 mm tape and reel
SOT54
4.6 x 3.9 x 5.1
5,000
5,000
10,000
10,000
112
412
116
126
bulk, delta pinning
bulk, straight leads
tape and reel, wide pitch
tape ammopack, wide pitch
SOT89/SC-62
4.5 x 2.5 x 1.5
1,000
4,000
115
135
12 mm tape and reel
12 mm tape and reel
SOT115
44.5 x 13.65 x 20.4
100
112
4 tray/box
SOT143(N/R)
2.9 x 1.3 x 0.9
3,000
10,000
215
235
8 mm tape and reel
8 mm tape and reel
SOT223/SC-73
6.7 x 3.5 x 1.6
1,000
4,000
115
135
12 mm tape and reel
12 mm tape and reel
SOT307
10 x 10 x 1.75
1,500
96
480
518
551
557
13" tape and reel dry pack
1 tray dry pack
5 tray dry pack
SOT323/SC-70
2.0 x 1.25 x 0.9
3,000
10,000
115
135
8 mm tape and reel
8 mm tape and reel
SOT341
5.3 x 10.2 x 2.0
1,000
658
118
112
13" tape and reel
tube
SOT343(N/R)
2.0 x 1.25 x 0.9
3,000
10,000
115
135
8 mm tape and reel
8 mm tape and reel
SOT343F
2.1 x 1.25 x 0.7
3,000
115
8 mm tape and reel
SOT360
6.5 x 4.4 x 0.9
2,500
118
16 mm tape and reel
SOT363/SC-88
2.0 x 1.25 x 0.9
3,000
10,000
115
135
8 mm tape and reel
8 mm tape and reel
SOT401
5 x 5 x 1.4
2,000
360
118
151
13" tape and reel
1 tray
SOT403
5.0 x 4.4 x 0.9
2,500
118
12 mm tape and reel
SOT416/SC-75
1.6 x 0.8 x 0.75
3,000
115
8 mm tape and reel
SOT467B
9.78 x 18.29 x 4.67
60
20
112
112
blister, tray
blister, tray
SOT467C
20.45 x 18.54 x 4.67
60
20
112
112
blister, tray
blister, tray
SOT502A
19.8 x 9.4 x 4.1
60
300
112
135
blister, tray
reel
NXP Semiconductors RF Manual 16th edition
Packing and
packaging information
6.1
119
83
T8
SO
120
Package
Package dimensions
L x W x H (mm)
Packing
quantity
Product
12NC ending
Packing
method
SOT502B
19.8 x 9.4 x 4.1
60
100
112
118
blister, tray
reel
SOT538A
5.1 x 4.1 x 2.6
160
112
blister, tray
SOT539A
31.25 x 9.4 x 4.65
60
300
112
135
blister, tray
reel
SOT540A
21.85 x 10.2 x 5.4
60
112
blister, tray
SOT608A
10.1 x 10.1 x 4.2
60
60
300
112
112
135
blister, tray
blister, tray
reel
SOT608B
10.1 x 10.1 x 4.2
60
100
300
112
118
135
blister, tray
reel
reel
SOT616
4.0 x 4.0 x 0.85
6,000
1,500
100
118
115
551
12 mm tape and reel
8 mm tape and reel
tray
SOT617
5 x 5 x 0.85
6,000
118
tape and reel
SOT618
6 x 6 x 0.85
4,000
1,000
490
2,450
118
515
551
157
13" tape and reel
7" tape and reel dry pack
1 tray dry pack
5 tray
SOT638
14 x 14 x 1
1,000
90
450
518
551
557
13" tape and reel dry pack
1 tray dry pack
5 tray dry pack
SOT650-1
3.0 x 3.0 x 0.85
6,000
118
reel
SOT666
1.6 x 1.2 x 0.7
4,000
115
8 mm tape and reel
SOT684
8 x 8 x 0.85
1,000
260
260
1,300
518
151
551
157
13" tape and reel dry pack
1 tray
1 tray dry pack
5 tray dry pack
SOT724
8.7 x 3.9 x 1.47
2,500
118
16 mm tape and reel
SOT753
2.9 x 1.5 x 1.0
3,000
125
8 mm tape and reel
SOT763-1
2.5 x 3.5 x 0.85
3,000
6,000
115
135
reel
SOT778
6.0 x 6.0 x 0.85
490
4,000
551
518
tray
multiple trays
SOT822-1
15.9 x 11 x 3.6
180
127
tube
SOT834-1
15.9 x 11 x 3.15
180
127
tube
SOT883
1.0 x 0.6 x 0.5
3,000
115
8 mm tape and reel
SOT886
1.45 x 1.0 x 0.5
5,000
115
8 mm tape and reel
SOT891
1.0 x 1.0 x 0.5
5,000
132
8 mm tape and reel
SOT908
3.0 x 3.0 x 0.85
6,000
118
12 mm tape and reel
SOT922-1
17.4 x 9.4 x 3.88
60
112
blister, tray
SOT975B
6.5 x 6.5 x 3.3
180
100
112
118
blister, tray
tape and reel
SOT975C
6.5 x 6.5 x 3.3
180
100
112
118
blister, tray
tape and reel
SOT979A
31.25 x 10.2 x 5.3
60
112
blister, tray
SOT1110A
41.28 x 17.12 x 5.36
60
100
112
118
blister, tray
reel
SOT1110B
41.15 x 36.32 x 4.68
60
112
blister, tray
NXP Semiconductors RF Manual 16th edition
Package dimensions
L x W x H (mm)
Packing
quantity
Product
12NC ending
Packing
method
SOT1112A
16.65 x 20.32 x 4.205
60
100
112
118
blister, tray
reel
SOT1112B
16.65 x 15.22 x 4.205
60
100
112
118
blister, tray
reel
SOT1120A
9.4 x 19.815 x 4.1
60
100
112
118
blister, tray
reel
SOT1120B
9.4 x 19.815 x 4.1
60
100
112
118
blister, tray
reel
SOT1121A
34.16 x 19.94 x 4.75
60
100
112
118
blister, tray
reel
SOT1121B
20.70 x 19.94 x 4.75
60
100
112
118
blister,tray
reel
SOT1121C
13.4 x 20.575 x 3.785
DEV
DEV
DEV
SOT1130A
20.45 x 17.12 x 4.65
60
112
blister, tray
SOT1130B
9.91 x 17.12 x 4.65
60
112
blister, tray
SOT1135A
20.45 x 19.94 x 4.65
60
100
112
118
blister, tray
reel
SOT1135B
16.65 x 9.78 x 4.205
60
100
112
118
blister, tray
reel
SOT1135C
16.65 x 9.78 x 4.205
60
100
112
118
blister, tray
reel
SOT1138
19.48 x 20.57 x 3.9
DEV
DEV
DEV
SOT1179
4.0 x 6.0 x 0.85
DEV
DEV
DEV
SOT1198-1
10.0 x 5.5 x 0.8
1000
115
reel
SOT1204
13.2 x 20.57 x 3.9
DEV
DEV
DEV
SOT1209
2 x 1.3 x 0.35
5000
147
8 mm tape and reel
SOT1240B
21.60 x 20.575 x 3.875
DEV
DEV
DEV
SOT1240C
18.00 x 20.575 x 3.875
DEV
DEV
DEV
SOT1242B
22.60 x 32.45 x 4.455
DEV
DEV
DEV
SOT1242C
18.00 x 32.45 x 4.455
DEV
DEV
DEV
SOT1244B
19.43 x 20.575 x 3.875
DEV
DEV
DEV
SOT1244C
18.00 x 20.575 x 3.875
DEV
DEV
DEV
Packing and
packaging information
N6
SO
HX
Package
NXP Semiconductors RF Manual 16th edition
121
6.2
Marking codes
In general, device marking includes the part number, some manufacturing information and the NXP logo. If packages
are too small for the full-length part number a shorter, coded part number – marking code – is used (where % = placeholder
for manufacturing site code). The full-length part number is always printed on the packing label on the box or bulk-pack in
which the devices are supplied.
p = made in Hong Kong
t
= made in Malaysia
W = made in China
Marking code
10%
13%
20%
21%
22%
24%
25%
26%
28%
29%
30%
31%
32%
33%
34%
35%
36%
38%
39%
40%
41%
42%
47%
48%
49%
50%
1
2
2
4
4
7
7
8
8
9
9
%1V
%1W
%6G
%6J
%6K
%6N
%6S
%6W
%6X
%6Y
%7N
%8N
%AB
%BG
%E7
%E8
%E9
%EA
%EB
%EC
%ED
%M1
%M2
%M3
%M4
122
Final product
BAT18
BB207
BF545A
BF545B
BF545C
BF556A
BF556B
BF556C
BF861A
BF861B
BF861C
BFR505
BFR520
BFR540
BFT25A
ON4288
ON4690
PMBFJ108
PMBFJ109
PMBFJ110
PMBFJ111
PMBFJ112
PMBFJ113
PMBFJ308
PMBFJ309
PMBFJ310
BA277
BB182
BB182/L
BB189
BB189/L
BA891
BA891/L
BB178
BB178/L
BB179
BB179/L
BFR93AW/DG
BAP51-05W
PMBF4393
PMBF4391
PMBF4392
ON5088
PMBFJ176
PMBFJ175
PMBFJ174
PMBFJ177
ON5087
ON5089
BF1210
PMBFJ177/DG
BGA2800
BGA2801
BGA2815
BGA2816
BGA2850
BGA2865
BGA2866
BF908
BF908R
BF909
BF909R
Package
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOD523
SOD523
SOD523
SOD523
SOD523
SOD523
SOD523
SOD523
SOD523
SOD523
SOD523
SOT323
SOT323
SOT23
SOT23
SOT23
SOT343
SOT23
SOT23
SOT23
SOT23
SOT343
SOT343
SOT363
SOT23
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT143
SOT143
SOT143
SOT143
NXP Semiconductors RF Manual 16th edition
Marking code
%M5
%M6
%M7
%M8
%M9
%M9
%MA
%MB
%MC
%MD
%ME
%MF
%MG
%MH
%MK
%ML
%MM
%MM
%MN
%MP
%MP
%MR
%MS
%MT
%MU
%MV
%MW
%MX
%MY
%MZ
%VA
%VB
LE
L4
LC
L3
1A
1B
1B%
1C
1C%
1N%
2A%
2E
2L
2N
4A
4K%
4L%
4W%
5K%
5W%
6F%
6K%
6W%
7K%
8K%
A1
A1
A1
A1
A2
Final product
BF909A
BF909AR
BF904A
BF904AR
BSS83
ON4906
BF991
BF992
BF904
BF904R
BFG505
BFG520
BFG540
BFG590
BFG505/X
BFG520/X
BFG540/X
ON4832
BFG590/X
BFG520/XR
ON4973
BFG540/XR
BFG10
BFG10/X
BFG25A/X
BFG67/X
BFG92A/X
BFG93A/X
BF1100
BF1100R
BGU7041
BGU7042
BAP64LX
BB179LX
BAP55LX
BB178LX
BGU6101
BGU6102
BGA2717
BGU6104
BAP50-05
BAP70-04W
BF862
PRF949/DG
BF1208
BF1206F
BF1208D
BAP64-04
BAP50-04
BAP64-04W
BAP64-05
BAP64-05W
BAP1321-04
BAP64-06
BAP50-04W
BAP65-05
BAP70-05
BA591
BB208-02
BGA2001
BAP64Q
BB208-03
Package
SOT143
SOT143
SOT143
SOT143
SOT143
SOT143
SOT143
SOT143
SOT143
SOT143
SOT143
SOT143
SOT143
SOT143
SOT143
SOT143
SOT143
SOT143
SOT143
SOT143
SOT143
SOT143
SOT143
SOT143
SOT143
SOT143
SOT143
SOT143
SOT143
SOT143
SOT363
SOT363
SOD882D
SOD882D
SOD882D
SOD882D
SOT1209
SOT1209
SOT363
SOT1209
SOT23
SOT323
SOT23
SOT416
SOT666
SOT666
SOT666
SOT23
SOT23
SOT323
SOT23
SOT323
SOT23
SOT23
SOT323
SOT23
SOT23
SOD323
SOD523
SOT343
SOT753
SOD323
Marking code
A2
A2
A2
A2%
A3
A3
A3
A3%
A5
A5%
A6%
A7%
A8
A8%
A8%
A9
AC
B3
B5%
B6
B6%
B7
B7%
B7%
B7%
BA%
BCp
C
C1%
C2%
C4%
C5%
CL
D1
D2
D2
D3
D3
D4
D5
D6
D7
D8
E1%
E1%
E1%
E1%
E2%
E2%
E2%
E3%
E6
FB
FF
FG
G2
G2%
G3%
G4%
G5%
K1
K2
Final product
BB184
BGA2002
BAP70Q
BGA2022
BAP64-03
BB198
BGA2003
BGA2031/1
BAP51-03
BGA2011
BGA2012
BFG310W/XR
BAP50-03
BFG325W/XR
PMBFJ620
BAP70-03
BGU7005
BGU7003
BSR12
BGU7007
BGA2715
BGU7008
BF862/B
BFU725F/N1
BGA2716
BGA2714
BFQ591
BB179B
BGM1011
BGM1012
BGM1013
BGM1014
BAP70-03/DG
BFU610F
BAP63-03
BFU630F
BAP65-03
BFU660F
BFU690F
BFU710F
BFU730F
BFU760F
BFU790F
BFS17
BFS17/FD
ON4438
BFS17W
BFS17A
ON5023
BGA2712
BGA2709
BAP55L
BFQ19
BFQ18A
BFQ149
BA278
BGA2711
BGA2748
BGA2771
BGA2776
BAP51-02
BAP51-05W
Package
SOD523
SOT343
SOT753
SOT363
SOD323
SOD523
SOT343
SOT363
SOD323
SOT363
SOT363
SOT343
SOD323
SOT343
SOT363
SOD323
SOT886
SOT891
SOT23
SOT886
SOT363
SOT886
SOT23
SOT343
SOT363
SOT363
SOT89
SOD523
SOT363
SOT363
SOT363
SOT363
SOD323
SOT343
SOD323
SOT343
SOD323
SOT343
SOT343
SOT343
SOT343
SOT343
SOT343
SOT23
SOT23
SOT23
SOT323
SOT23
SOT23
SOT363
SOT363
SOD882
SOT89
SOT89
SOT89
SOD523
SOT363
SOT363
SOT363
SOT363
SOD523
SOD523
Final product
BAP50-02
BAP63-02
BAP65-02
BAP1321-02
BAP70-02
BB199
BB202LX
BB202
BAP51LX
BF1203
BB178LX
BF1204
BB179LX
BF1205
BB179BLX
BB181LX
BF1206
BB182LX
BA792
BB187LX
BF1208
BF1201WR
BF1201
BAP50LX
BF1201R
PBR941B
BAP55LX
BAP63LX
BF1202
BF1202/L
BAP64LX
BF1202WR
BF1202WR/L
BF1202R
BAP65LX
BF1211
BAP142LX
BF1212
BAP1321LX
BF1211R
BGU7044
BF1212R
BGU7045
BGA2867
BGA2874
BGA2817
BFR30
BFR31
BF1207
BF908
BF908R
BF909
BF909R
BFT46
BF909A
BF909AR
BF1215
BSR56
BF904A
BF904AR
BSR57
BF1216
BF1100
BF1100R
BSR58
BF1205C
BF1218
BSS83
ON4906
BF991
BF992
BGA2802
BF998WR
BGA2803
BF904WR
BGA2851
BF908WR
BF909WR
BF1100WR
BF909AWR
BF994S
Package
SOD523
SOD523
SOD523
SOD523
SOD523
SOD523
SOD882T
SOD523
SOD882T
SOT363
SOD882T
SOT363
SOD882T
SOT363
SOD882T
SOD882T
SOT363
SOD882T
SOD110
SOD882T
SOT363
SOT343
SOT143
SOD882T
SOT143
SOT23
SOD882T
SOD882T
SOT143
SOT143
SOD882T
SOT343
SOT343
SOT143
SOD882T
SOT143
SOD882T
SOT143
SOD882T
SOT143
SOT363
SOT143
SOT363
SOT363
SOT363
SOT363
SOT23
SOT23
SOT363
SOT143
SOT143
SOT143
SOT143
SOT23
SOT143
SOT143
SOT363
SOT23
SOT143
SOT143
SOT23
SOT363
SOT143
SOT143
SOT23
SOT363
SOT363
SOT143
SOT143
SOT143
SOT143
SOT363
SOT343
SOT363
SOT343
SOT363
SOT343
SOT343
SOT343
SOT343
SOT143
Marking code
MH
MH%
MK
ML
ML
MO%
MO%
MO4
MO6
N
N0
N0%
N0%
N2
N2%
N2%
N3
N33
N36
N37
N38
N39
N4
N4
N4%
N42
N43
N43
N44
N48
N49
N6%
N7
N70
N71
N8
N9
N9%
NA
NA%
NB
NB%
NC
NC%
ND
ND%
NE
NE%
NF%
NG%
NG%
NH%
NL%
33*
P1
P1
P2%
P2%
P2%
P3
p3A
P4
p4A
P5
P5
p5A
P6
p6K
p6L
P8
P9
PB
PC
PF
PL
R2%
R2%
R5%
R7%
R8%
S
Final product
BF904AWR
BF996S
BF1211WR
BF1212WR
BF1212WR/L
BF998
BF998R
BF904
BF904R
BB181
BFR505T
BFS505
BFM505
BFR520T
BFS520
BFM520
BFG520W
BFG505
BFG520
BFG540
BFG590
BFG505/X
BFG520W/X
BFQ540
BFS540
BFG520/X
BFG540/X
ON4832
BFG590/X
BFG520/XR
BFG540/XR
BFS25A
BFG540W/X
BFG10
BFG10/X
BFG540W/XR
BFG540W
BAP70AM
BF1105WR
BF1105R
BF1109WR
BF1109R
BF1101WR
BF1101R
BFG424W
BF1101
BFG424F
BF1105
BF1109
BF1108
BF1108/L
BF1108R
BFR94A
BFR540
BB131
BFG21W
BFR92A
ON4640
BFR92AW
BFG403W
BGA6289
BFG410W
BGA6489
BB135
BFG425W
BGA6589
BFG480W
BGA7024
BGA7027
BB148
BB149
BB152
BB153
BB156
BB149A
BFR93A
BFR93AW
BFR93AR
BFR106
BFG93A
BAP64-02
Package
SOT343
SOT143
SOT343
SOT343
SOT343
SOT143
SOT143
SOT143
SOT143
SOD523
SOT416
SOT323
SOT363
SOT416
SOT323
SOT363
SOT343
SOT143
SOT143
SOT143
SOT143
SOT143
SOT343
SOT89
SOT323
SOT143
SOT143
SOT143
SOT143
SOT143
SOT143
SOT323
SOT343
SOT143
SOT143
SOT343
SOT343
SOT363
SOT343
SOT143
SOT343
SOT143
SOT343
SOT143
SOT343
SOT143
SOT343
SOT143
SOT143
SOT143
SOT143
SOT143
SOT23
SOT143
SOD323
SOT343
SOT23
SOT23
SOT323
SOT343
SOT89
SOT343
SOT89
SOD323
SOT343
SOT89
SOT343
SOT89
SOT89
SOD323
SOD323
SOD323
SOD323
SOD323
SOD323
SOT23
SOT323
SOT23
SOT23
SOT143
SOD523
Marking code
S1%
S2%
S2%
S3%
S6%
S7%
S8%
S9%
SB%
SB%
SC%
SC%
SD%
SE%
T5
TA%
TB%
UW
UY
UZ
V0%
V0%
V1
V1%
V11
V12
V14
V15
V2%
V2%
V2%
V3%
V4%
V6%
V8
VA
VB
VC
VC%
VD%
W1
W1%
W1%
W2%
W2%
W2%
W4%
W6%
W7%
W9%
X
X
X1%
X1%
XG%
YC%
Z
ZA%
ZC
ZD
ZE
ZF
ZK%
ZX%
Final product
BFG310/XR
BFG325/XR
BBY40
BF1107
BF510
BF511
BF512
BF513
BF1214
BF1214/L
BB201
BGU7031
BGU7032
BGU7033
BFG10W/X
BGA2818
BGA2819
BGU7003W
BGU7004
BGU8007
PBR941
PRF947
BFG25AW/X
BFT25
BFG25A/X
BFG67/X
BFG92A/X
BFG93A/X
BFQ67
ON5042
BFQ67W
BFG67
BAP64-06W
BAP65-05W
BAP1321-03
BF1217WR
BF1118W
BF1118WR
BF1118
BF1118R
BF1102
BFT92
BFT92W
PBR951
PRF957
BF1102R
BAP50-05W
BAP51-04W
BAP51-06W
BAP63-05W
BB187
BB187/L
BFT93
BFT93W
BFR94AW
BGA2870
BB145B
BFU668F
BFU710LX
BFU730LX
BFU760LX
BFU790LX
ON5052
BGA2022/C
Package
SOT143
SOT143
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT363
SOT363
SOT23
SOT363
SOT363
SOT363
SOT343
SOT363
SOT363
SOT886
SOT886
SOT886
SOT23
SOT323
SOT343
SOT23
SOT143
SOT143
SOT143
SOT143
SOT23
SOT23
SOT323
SOT143
SOT323
SOT323
SOD323
SOT343
SOT343
SOT343
SOT143
SOT143
SOT363
SOT23
SOT323
SOT23
SOT323
SOT363
SOT323
SOT323
SOT323
SOT323
SOD523
SOD523
SOT23
SOT323
SOT323
SOT363
SOD523
SOT343
SOT883
SOT883
SOT883
SOT883
SOT23
SOT363
NXP Semiconductors RF Manual 16th edition
Packing and
packaging information
Marking code
K4
K5
K6
K7
K8
K9
L1
L2
L2
L2%
L3
L3%
L4
L4%
L5
L6
L6%
L7
L8
L8
L9%
LA
LA%
LB
LB%
LB%
LC
LD
LD%
LD%
LE
LE
LE
LE%
LF
LF%
LG
LG%
LH
LH%
LJ%
LK%
LK%
LP%
LR%
LS%
M1%
M2%
M2%
M26
M27
M28
M29
M3%
M33
M34
M4%
M4%
M41
M42
M5%
M5%
M56
M57
M6%
M6%
M7%
M74
M74
M91
M92
MA%
MB
MB%
MC
MC%
MD
ME
MF
MG
MG%
123
7. Abbreviations
3-way
AM
ASIC
ASYM
BPF
BUC
CATV
CDMA
CMMB
CMOS
CQS
DAB
DECT
DiSEqC
DSB
DVB
EDGE
ESD
FET
FM
GaAs
GaN
Gen
GPS
GSM
HBT
HDTV
HF
HFC
HFET
HPA
HVQFN
Abbreviations
IF
ISM
LDMOS
LNA
LNB
LO
LPF
MESFET
MMIC
MMPP
124
Doherty design using 3 discrete transistors
Amplitude Modulation
Application Specific Integrated Circuit
Asymmetrical design of Doherty (main and
peak device are different)
Band Pass Filter
Block Upconverter
Community Antenna Television
Code Division Multiple Access
Chinese Multimedia Mobile Broadcasting
Complementary Metal Oxide Semiconductor
Customer Qualification Samples
Digital Audio Broadcasting
Digital Enhanced Cordless
Telecommunications
Digital Satellite Equipment Control
Digital Signal Processor
Digital Video Broadcasting
Enhanced Data Rates for GSM Evolution
Electro Static Device
Field Effect Transistor
Frequency Modulation
Gallium Arsenide
Gallium Nitride
Generation
Global Positioning System
Global System for Mobile communications
Heterojunction Bipolar Transistor
High Definition Television
High Frequency (3-30 MHz)
Hybrid Fiber Coax
Heterostructure Field Effect Transistor
High Power Amplifier
Plastic thermally enHanced Very thin Quad
Flat pack No leads
Intermediate Frequency
Industrial, Scientific, Medical - reserved
frequency bands
Laterally Diffused Metal-Oxide-Semiconductor
Low Noise Amplifier
Low Noise Block
Local Oscillator
Low Pass Filter
Metal Semiconductor Field Effect Transistor
Monolithic Microwave Integrated Circuit
Main and peak devices realized separately in
halves of push-pull transistor
NXP Semiconductors RF Manual 16th edition
MPPM
Main and peak device realized in same pushpull transistor (2 times)
MoCA
Multimedia over Coax Alliance
MOSFET
Metal–Oxide–Semiconductor Field Effect
Transistor
MPA
Medium Power Amplifier
MRI
Magnetic Resonance Imaging
NF
Noise Figure
NIM
Network Interface Module
NMR
Nuclear Magnetic Resonance
PA
Power Amplifier
PAR
Peak to Average Ratio
PEP
Peak Envelope Power
pHEMT
pseudomorphic High Electron Mobility
Transistor
PLL
Phase Locked Loop
QUBiC
Quality BiCMOS
RF
Radio Frequency
RFS
Release for Supply
RoHS
Restriction of Hazardous Substances
Rx
Receive
SARFT
State Administration for Radio, Film and
Television
SER
Serializer
SiGe:C
Sillicon Germanium Carbon
SMATV
Satellite Master Antenna Television
SMD
Surface Mounted Device
SPDT
Single Pole, Double Throw
SYM
Symmetrical design of Doherty (main and peak
device are the same type of transistor)
TD-SCDMA Time Division-Synchronous Code Division
Multiple Access
TCAS
Traffic Collision Avoidance Systems
TMA
Tower Mounted Amplifier
TTFF
Time to First Fix
Tx
Transmit
UHF
Ultra High Frequency (470-860 MHz)
UMTS
Universal Mobile Telecommunications System
VCO
Voltage Controlled Oscillator
VGA
Variable Gain Amplifier
VHF
Very High Frequency (30-300 MHz)
VoIP
Voice over Internet Protocol
VSAT
Very Small Aperture Terminal
WCDMA
Wideband Code Division Multiple Access
WiMAX
Worldwide Interoperability for Microwave
Access
WLAN
Wireless Local Area Network
8. Contacts and web links
How to contact your authorized distributor or local NXP representative.
Authorized distributors
Asia Pacific:
http://www.nxp.com/profile/sales/asia_pacific_dist
Europe / Africa / Middle East:
http://www.nxp.com/profile/sales/europe_dist
North America:
http://www.nxp.com/profile/sales/northamerica_dist
Local NXP offices
Asia Pacific:
http://www.nxp.com/profile/sales/asia_pacific
Europe / Africa / Middle East:
http://www.nxp.com/profile/sales/europe
North America:
http://www.nxp.com/profile/sales/northamerica
NXP RF MMICs:
http://www.nxp.com/mmics
NXP RF wideband transistors:
http://www.nxp.com/rftransistors
NXP RF power & base stations:
http://www.nxp.com/rfpower
NXP RF FETs:
http://www.nxp.com/rffets
NXP RF CATV electrical & optical:
http://www.nxp.com/catv
NXP RF applications:
http://www.nxp.com/rf
NXP application notes:
http://www.nxp.com/technical-support-portal/50812/50961
NXP cross-references:
http://www.nxp.com
Web links
NXP RF Manual web page:
http://www.nxp.com/rfmanual
NXP varicaps:
http://www.nxp.com/varicaps
NXP RF PIN diodes:
http://www.nxp.com/pindiodes
NXP RF schottky diodes:
http://www.nxp.com/rfschottkydiodes
NXP packaging:
http://www.nxp.com/package
NXP end-of-life:
http://www.nxp.com/products/eol
NXP quality handbook:
http://www.standardics.nxp.com/quality/handbook
NXP literature:
http://www.nxp.com/products/discretes/documentation
NXP sales offices and distributors:
http://www.nxp.com/profile/sales
Contacts
and web links
NXP Semiconductors:
http://www.nxp.com
NXP Semiconductors RF Manual 16th edition
125
9. Product index
Type
Portfolio
chapter
Type
Portfolio
chapter
Type
Portfolio
chapter
1PS10SB82
3.2.4
BAP70Q
3.2.2
BF1208D
3.5.2
BFG325W/XR
3.3.1
1PS66SB17
3.2.4
BAT17
3.2.4
BF1210
3.5.2
BFG35
3.3.1
1PS66SB82
3.2.4
BAT18
3.2.3
BF1211
3.5.2
BFG403W
3.3.1
1PS70SB82
3.2.4
BB131
3.2.1
BF1211R
3.5.2
BFG410W
3.3.1
1PS70SB84
3.2.4
BB135
3.2.1
BF1211WR
3.5.2
BFG424F
3.3.1
1PS70SB85
3.2.4
BB145B
3.2.1
BF1212
3.5.2
BFG424W
3.3.1
1PS70SB86
3.2.4
BB148
3.2.1
BF1212R
3.5.2
BFG425W
3.3.1
1PS76SB17
3.2.4
BB149
3.2.1
BF1212WR
3.5.2
BFG480W
3.3.1
1PS79SB17
3.2.4
BB149A
3.2.1
BF1214
3.5.2
BFG505
3.3.1
1PS88SB82
3.2.4
BB152
3.2.1
BF1215
3.5.2
BFG505/X
3.3.1
BA277
3.2.3
BB153
3.2.1
BF1216
3.5.2
BFG505W
3.3.1
BA591
3.2.3
BB156
3.2.1
BF1217
3.5.2
BFG505W/X
3.3.1
BA891
3.2.3
BB178
3.2.1
BF1218
3.5.2
BFG505W/XR
3.3.1
BAP1321-02
3.2.2
BB178LX
3.2.1
BF510
3.5.1
BFG520
3.3.1
BAP1321-03
3.2.2
BB179
3.2.1
BF511
3.5.1
BFG520/X
3.3.1
BAP1321-04
3.2.2
BB179B
3.2.1
BF512
3.5.1
BFG520/XR
3.3.1
BAP1321LX
3.2.2
BB179BLX
3.2.1
BF513
3.5.1
BFG520W
3.3.1
BAP142LX
3.2.2
BB179LX
3.2.1
BF545A
3.5.1
BFG520W/X
3.3.1
BAP50-02
3.2.2
BB181
3.2.1
BF545B
3.5.1
BFG540
3.3.1
BAP50-03
3.2.2
BB182
3.2.1
BF545C
3.5.1
BFG540/X
3.3.1
BAP50-04
3.2.2
BB184
3.2.1
BF556A
3.5.1
BFG540/XR
3.3.1
BAP50-04W
3.2.2
BB187
3.2.1
BF556B
3.5.1
BFG540W
3.3.1
BAP50-05
3.2.2
BB187LX
3.2.1
BF556C
3.5.1
BFG540W/X
3.3.1
BAP50-05W
3.2.2
BB189
3.2.1
BF861A
3.5.1
BFG540W/XR
3.3.1
BAP50LX
3.2.2
BB198
3.2.1
BF861B
3.5.1
BFG541
3.3.1
BAP51-02
3.2.2
BB199
3.2.1
BF861C
3.5.1
BFG590
3.3.1
BAP51-03
3.2.2
BB201
3.2.1
BF862
3.5.1
BFG590/X
3.3.1
BAP51-04W
3.2.2
BB202
3.2.1
BF904A
3.5.2
BFG591
3.3.1
BAP51-05W
3.2.2
BB207
3.2.1
BF904AR
3.5.2
BFG67
3.3.1
BAP51-06W
3.2.2
BB208-02
3.2.1
BF904AWR
3.5.2
BFG67/X
3.3.1
BAP51LX
3.2.2
BB208-03
3.2.1
BF908
3.5.2
BFG92A/X
3.3.1
BAP55LX
3.2.2
BBY40
3.2.1
BF908R
3.5.2
BFG93A
3.3.1
BAP63-02
3.2.2
BF1102(R)
3.5.2
BF908WR
3.5.2
BFG93A/X
3.3.1
BAP63-03
3.2.2
BF1105
3.5.2
BF909A
3.5.2
BFG94
3.3.1
BAP63-05W
3.2.2
BF1105R
3.5.2
BF909AR
3.5.2
BFG97
3.3.1
BAP63LX
3.2.2
BF1105WR
3.5.2
BF909AWR
3.5.2
BFM505
3.3.1
BAP64-02
3.2.2
BF1107
3.5.2
BF991
3.5.2
BFM520
3.3.1
BAP64-03
3.2.2
BF1108
3.5.2
BF992
3.5.2
BFM540
3.3.1
BAP64-04
3.2.2
BF1108R
3.5.2
BF994S
3.5.2
BFQ149
3.3.1
BAP64-04W
3.2.2
BF1108W
3.5.2
BF996S
3.5.2
BFQ18A
3.3.1
BAP64-05
3.2.2
BF1108WR
3.5.2
BF998
3.5.2
BFQ19
3.3.1
BAP64-05W
3.2.2
BF1118
3.5.2
BF998R
3.5.2
BFQ591
3.3.1
BAP64-06
3.2.2
BF1118R
3.5.2
BF998WR
3.5.2
BFQ67
3.3.1
BAP64-06W
3.2.2
BF1118W
3.5.2
BFG10
3.3.1
BFQ67W
3.3.1
BAP64LX
3.2.2
BF1118WR
3.5.2
BFG10/X
3.3.1
BFR106
3.3.1
BAP64Q
3.2.2
BF1201
3.5.2
BFG10W/X
3.3.1
BFR30
3.5.1
BAP65-02
3.2.2
BF1201R
3.5.2
BFG135
3.3.1
BFR31
3.5.1
BAP65-03
3.2.2
BF1201WR
3.5.2
BFG198
3.3.1
BFR505
3.3.1
BAP65-05
3.2.2
BF1202
3.5.2
BFG21W
3.3.1
BFR505T
3.3.1
BAP65-05W
3.2.2
BF1202R
3.5.2
BFG25A/X
3.3.1
BFR520
3.3.1
BAP65LX
3.2.2
BF1202WR
3.5.2
BFG25AW
3.3.1
BFR520T
3.3.1
BAP70-02
3.2.2
BF1203
3.5.2
BFG25AW/X
3.3.1
BFR540
3.3.1
BAP70-03
3.2.2
BF1204
3.5.2
BFG31
3.3.1
BFR92A
3.3.1
BAP70-04W
3.2.2
BF1206
3.5.2
BFG310/XR
3.3.1
BFR92AW
3.3.1
BAP70-05
3.2.2
BF1207
3.5.2
BFG310W/XR
3.3.1
BFR93A
3.3.1
BAP70AM
3.2.2
BF1208
3.5.2
BFG325/XR
3.3.1
BFR93AR
3.3.1
126
NXP Semiconductors RF Manual 16th edition
Product index
Portfolio
chapter
Type
Portfolio
chapter
Type
Portfolio
chapter
Type
Portfolio
chapter
Type
Portfolio
chapter
BFR93AW
3.3.1
BGA6102
3.4.1
BGX7300
3.4.2
BLF6G20S-230PRN
3.7.1.3
BFR94A
3.3.1
BGA6104
3.4.1
BGX885N
3.6.1
BLF6G21-10G
3.7.1.2
BFR94AW
3.3.1
BGA6289
3.4.1
BGY588C
3.6.1
BLF6G22(LS)-180PN
3.7.1.4
BFS17
3.3.1
BGA6489
3.4.1
BGY66B
3.6.5
BLF6G22(LS)-180RN
3.7.1.4
BFS17A
3.3.1
BGA6589
3.4.1
BGY67
3.6.5
BLF6G22(S)-45
3.7.1.4
BFS17W
3.3.1
BGA7014
3.4.1
BGY67A
3.6.5
BLF6G22L-40BN
3.7.1.4
BFS25A
3.3.1
BGA7017
3.4.1
BGY68
3.6.5
BLF6G22L(S)-40P
3.7.1.4
BFS505
3.3.1
BGA7020
3.4.1
BGY785A
3.6.1
BLF6G22LS-100
3.7.1.4
BFS520
3.3.1
BGA7024
3.4.1
BGY787
3.6.1
BLF6G22LS-130
3.7.1.4
BFS540
3.3.1
BGA7027
3.4.1
BGY835C
3.6.1
BLF6G22LS-75
3.7.1.4
BFT25
3.3.1
BGA7124
3.4.1
BGY885A
3.6.1
BLF6G27-10(G)
3.7.1.5
BFT25A
3.3.1
BGA7127
3.4.1
BGY887
3.6.1
BLF6G27(LS)-100
3.7.1.6
BFT46
3.5.1
BGA7130
3.4.1
BGY887B
3.6.1
BLF6G27(LS)-135
3.7.1.6
BFT92
3.3.1
BGA7204
3.4.1
BGY888
3.6.1
BLF6G27(LS)-75
3.7.1.6
BFT92W
3.3.1
BGA7210
3.4.1
BLA0912-250R
3.7.3.1
BLF6G27(S)-45
3.7.1.6
BFT93
3.3.1
BGA7350
3.4.1
BLA1011-10
3.7.3.1
BLF6G27L(S)-40P
3.7.1.6
BFT93W
3.3.1
BGA7351
3.4.1
BLA1011-2
3.7.3.1
BLF6G27L(S)-50BN
3.7.1.6
BFU610F
3.3.1
BGD712
3.6.3
BLA1011-300
3.7.3.1
BLF6G38-10(G)
3.7.1.7
BFU630F
3.3.1
BGD712C
3.6.3
BLA1011(S)-200R
3.7.3.1
BLF6G38(LS)-100
3.7.1.7
BFU660F
3.3.1
BGD714
3.6.3
BLA6G1011-200R
3.7.3.1
BLF6G38(LS)-50
3.7.1.7
BFU690F
3.3.1
BGD812
3.6.3
BLA6G1011LS-200RG
3.7.3.1
BLF6G38(S)-25
3.7.1.7
BFU710F
3.3.1
BGD814
3.6.3
BLA6H0912-500
3.7.3.1
BLF6H10L(S)-160
3.7.1
BFU725F/N1
3.3.1
BGD816L
3.6.3
BLA6H1011-600
3.7.3.1
BLF7G10L(S)-250
3.7.1.1
BFU730F
3.3.1
BGE787B
3.6.1
BLD6G21L(S)-50
3.7.1.3
BLF7G15LS-200
3.7.1.2
BFU730LX
3.3.1
BGE788C
3.6.1
BLD6G22L(S)-50
3.7.1.4
BLF7G15LS-300P
3.7.1.2
BFU760F
3.3.1
BGE885
3.6.1
BLF174XR(S)
3.7.2
BLF7G20L(S)-200
3.7.1.3
BFU790F
3.3.1
BGM1013
3.4.1
BLF178XR(S)
3.7.2
BLF7G20L(S)-250P
3.7.1.3
BGA2001
3.4.1
BGM1014
3.4.1
BLF2425M6L(S)180P
3.7.2
BLF7G20L(S)-90P
3.7.1.3
BGA2002
3.4.1
BGO807C
3.6.4
BLF2425M7L(S)140
3.7.2
BLF7G20LS-140P
3.7.1.3
BGA2003
3.4.1
BGO807CE
3.6.4
BLF2425M7L(S)200
3.7.2
BLF7G20LS-260A
3.7.1
BGA2011
3.4.1
BGR269
3.6.5
BLF2425M7L(S)250P
3.7.2
BLF7G21L(S)-160P
3.7.1.4
BGA2012
3.4.1
BGU6101
3.4.1
BLF25M612(G)
3.7.2
BLF7G21LS-160
3.7.1.4
BGA2022
3.4.1
BGU6102
3.4.1
BLF369
3.7.2.1
BLF7G22L(S)-100P
3.7.1.4
BGA2031/1
3.4.1
BGU6104
3.4.1
BLF3G21-30
3.7.1.4
BLF7G22L(S)-130
3.7.1.4
BGA2709
3.4.1
BGU7003
3.4.1
BLF3G21-6
3.7.1.4
BLF7G22L(S)-160
3.7.1.4
BGA2712
3.4.1
BGU7003W
3.4.1
BLF571
3.7.2.1
BLF7G22L(S)-200
3.7.1.4
BGA2714
3.4.1
BGU7004
3.4.1
BLF572XR(S)
3.7.2
BLF7G22L(S)-250P
3.7.1.4
BGA2715
3.4.1
BGU7005
3.4.1
BLF573(S)
3.7.2.1
BLF7G24L(S)-100
3.7.1.5
BGA2716
3.4.1
BGU7007
3.4.1
BLF574
3.7.2.1
BLF7G24L(S)-140
3.7.1.5
BGA2717
3.4.1
BGU7008
3.4.1
BLF574XR(S)
BGA2748
3.4.1
BGU7031
3.4.1
BLF578
BGA2776
3.4.1
BGU7032
3.4.1
BLF578XR(S)
BGA2800
3.4.1
BGU7033
3.4.1
BLF642
BGA2801
3.4.1
BGU7041
3.4.1
BLF645
BGA2802
3.4.1
BGU7042
3.4.1
BLF647
BGA2803
3.4.1
BGU7044
3.4.1
BGA2815
3.4.1
BGU7045
BGA2817
3.4.1
BGA2818
BGA2819
3.7.2
BLF7G24L(S)-160P
3.7.1
3.7.2.1
BLF7G27L-200PB
3.7.1.6
3.7.2
BLF7G27L(S)-100
3.7.1.6
3.7.2.2
BLF7G27L(S)-140
3.7.1.6
3.7.2.1
BLF7G27L(S)-150P
3.7.1.6
3.7.2.1
BLF7G27L(S)-75P
3.7.1.6
BLF647P(S)
3.7.2
BLF7G27L(S)-90P
3.7.1.6
3.4.1
BLF6G10(LS)-135RN
3.7.1.1
BLF7G27LS-90PG
BGU7051
3.4.1
BLF6G10(LS)-160RN
3.7.1.1
BLF861A
3.4.1
BGU7052
3.4.1
BLF6G10(LS)-200RN
3.7.1.1
BLF871(S)
3.7.2.1
3.4.1
BGU7053
3.4.1
BLF6G10(S)-45
3.7.1.1
BLF878
3.7.2.2
BGA2850
3.4.1
BGU7060
3.4.1
BLF6G10L-40BRN
3.7.1.1
BLF879P
3.7.2.2
BGA2851
3.4.1
BGU7061
3.4.1
BLF6G10L(S)-260PRN
3.7.1.1
BLF881(S)
3.7.2.2
BGA2865
3.4.1
BGU7062
3.4.1
BLF6G15L-250PBRN
3.7.1.2
BLF884P(S)
3.7.2.2
BGA2866
3.4.1
BGU7063
3.4.1
BLF6G15L-40BRN
3.7.1.2
BLF888
3.7.2.2
BGA2867
3.4.1
BGU8006
3.4.1
BLF6G15L(S)-40RN
3.7.1
BLF888A(S)
3.7.2.2
BGA2868
3.4.1
BGU8007
3.4.1
BLF6G20(LS)-110
3.7.1.3
BLF888B(S)
3.7.2.2
BGA2869
3.4.1
BGX7100
3.4.2
BLF6G20(LS)-180RN
3.7.1.3
BLF8G10L(S)-160
3.7.1.1
BGA2870
3.4.1
BGX7101
3.4.2
BLF6G20(LS)-75
3.7.1.3
BLF8G10L(S)-160V
3.7.1
BGA2874
3.4.1
BGX7220
3.4.2
BLF6G20(S)-45
3.7.1.3
BLF8G10L(S)-300P
3.7.1
BGA6101
3.4.1
BGX7221
3.4.2
BLF6G20LS-140
3.7.1.3
BLF8G10LS-200GV
3.7.1
NXP Semiconductors RF Manual 16th edition
3.7.1
3.7.2.1
127
Product index
Type
Portfolio
chapter
Type
Portfolio
chapter
BLF8G10LS-270GV
3.7.1
BLT80
3.3.1
PMBF4393
3.5.1
BLF8G10LS-400PGV
3.7.1
BLT81
3.3.1
PMBFJ108
3.5.1
BLF8G20L(S)-200V
3.7.1
BLU6H0410L(S)-600P
3.7.3
PMBFJ109
3.5.1
BLF8G20LS-270GV
3.7.1
BSR56
3.5.1
PMBFJ110
3.5.1
BLF8G20LS-270PGV
3.7.1
BSR57
3.5.1
PMBFJ111
3.5.1
BLF8G22LS-160BV
3.7.1
BSR58
3.5.1
PMBFJ112
3.5.1
BLF8G22LS-200GV
3.7.1
BSS83
3.5.2
PMBFJ113
3.5.1
BLF8G22LS-270GV
3.7.1
CGD1040HI
3.6.3
PMBFJ174
3.5.1
BLF8G22LS-400PGV
3.7.1
CGD1042H
3.6.3
PMBFJ175
3.5.1
BLF8G24L(S)-200P
3.7.1
CGD1042HI
3.6.3
PMBFJ176
3.5.1
3.7.1.6
CGD1044H
3.6.3
PMBFJ177
3.5.1
BLF8G27LS-140G
3.7.1
CGD1044HI
3.6.3
PMBFJ308
3.5.1
BLF8G27LS-140V
3.7.1
CGD1046HI
3.6.3
PMBFJ309
3.5.1
BLF8G27LS-200PGV
3.7.1
CGD942C
3.6.3
PMBFJ310
3.5.1
BLF8G27LS-280PGV
3.7.1
CGD944C
3.6.3
PMBFJ620
3.5.1
Type
BLF8G27LS-140
Type
Portfolio
chapter
BLL1214-250R
3.7.3.2
CGD982HCI
3.6.3
PRF947
3.3.1
BLL1214-35
3.7.3.2
CGD985HCI
3.6.3
PRF949
3.3.1
BLL6G1214L-250
3.7.3.2
CGD987HCI
3.6.3
PRF957
3.3.1
3.7.3
CGY1032
3.6.2
TFF1003HN
3.4.4
BLL6H0514-25
3.7.3.2
CGY1041
3.6.2
TFF1007HN
3.4.4
BLL6H0514L(S)-130
3.7.3.2
CGY1043
3.6.2
TFF1014HN
3.4.3
BLL6H1214(LS)-500
3.7.3.2
CGY1047
3.6.2
TFF1015HN
3.4.3
BLL6H1214L(S)-250
3.7.3.2
CGY1049
3.6.2
TFF1017HN
3.4.3
BLL6H1214LS-500
3.7.3
CGY1085A
3.6.2
TFF11070HN
3.4.4
BLM6G10-30(G)
3.7.1.1
CGY888C
3.6.1
TFF11073HN
3.4.4
BLM6G22-30(G)
3.7.1.4
CLF1G0035-100
3.7.4
TFF11077HN
3.4.4
BLM7G22S-60PB(G)
3.7.1
CLF1G0035-50
3.7.4
TFF11080HN
3.4.4
BLP7G07S-140P(G)
3.7.1
CLF1G0060-10
3.7.4
TFF11084HN
3.4.4
BLP7G09S-140P(G)
3.7.1
CLF1G0060-30
3.7.4
TFF11088HN
3.4.4
BLP7G22-10
3.7.1
JenNet
3.8
TFF11092HN
3.4.4
BLP7G22-10*
3.7.1.4
JenNet-IP
3.8
TFF11094HN
3.4.4
BLS2933-100
3.7.3.3
JN5142-001
3.8
TFF11096HN
3.4.4
BLS6G2731-6G
3.7.3.3
JN5142-J01
3.8
TFF11101HN
3.4.4
BLS6G2731(S)-120
3.7.3.3
JN5148-001
3.8
TFF11105HN
3.4.4
BLS6G2731S-130
3.7.3.3
JN5148-001-M00
3.8
TFF11110HN
3.4.4
3.7.3
JN5148-001-M03
3.8
TFF11115HN
3.4.4
BLS6G2933S-130
3.7.3.3
JN5148-001-M04
3.8
TFF11121HN
3.4.4
BLS6G3135(S)-120
3.7.3.3
JN5148-J01
3.8
TFF11126HN
3.4.4
BLS6G3135(S)-20
3.7.3.3
JN5148-Z01
3.8
TFF11132HN
3.4.4
BLS7G2325L-105
3.7.3.3
PBR941
3.3.1
TFF11139HN
3.4.4
3.7.3
PBR951
3.3.1
TFF11145HN
3.4.4
3.7.3.3
PMBD353
3.2.4
TFF11152HN
3.4.4
BLS7G3135L(S)-350P
3.7.3
PMBD354
3.2.4
ZigBee PRO
3.8
BLT50
3.3.1
PMBF4391
3.5.1
BLT70
3.3.1
PMBF4392
3.5.1
BLL6G1214LS-250
BLS6G2735L(S)-30
BLS7G2729L(S)-350P
BLS7G2933S-150
128
NXP Semiconductors RF Manual 16th edition
Notes
NXP Semiconductors RF Manual 16th edition
129
Notes
130
NXP Semiconductors RF Manual 16th edition
www.nxp.com
© 2012 NXP B.V.
All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner. The information presented in this document does not form part of any quotation or contract,
is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by
the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
53520-1205-1011
www.climatepartner.com
Date of release: June 2012
Document order number: 9397 750 17272
Printed in the Netherlands
Similar pages