AP75T10AGP
RoHS-compliant Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ Low On-resistance
▼ Fast Switching Characteristic
BVDSS
105V
RDS(ON)
15mΩ
ID
G
65A
S
Description
The Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
G
D
TO-220(P)
S
The TO-220 package is universally preferred for all commercialindustrial through hole applications and suited for low voltage
applications such as DC/DC converters.
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
105
V
VGS
Gate-Source Voltage
±20
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
65
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V
41
A
260
A
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
138
W
Linear Derating Factor
1.11
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Thermal Resistance Junction-case
Max.
0.9
℃/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
62
℃/W
Data and specifications subject to change without notice
200817071-1/4
AP75T10AGP
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=1mA
105
-
-
V
RDS(ON)
Static Drain-Source On-Resistance2
VGS=10V, ID=30A
-
-
15
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=30A
-
29.3
-
S
VDS=100V, VGS=0V
-
-
10
uA
Drain-Source Leakage Current (T j=150 C)
VDS=80V ,VGS=0V
-
-
100
uA
Gate-Source Leakage
VGS= ±20V
-
-
±100
nA
ID=30A
-
63
101
nC
IDSS
o
Drain-Source Leakage Current (T j=25 C)
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=80V
-
9
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
30
-
nC
VDS=50V
-
18
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=30A
-
74
-
ns
td(off)
Turn-off Delay Time
RG=10Ω,VGS=10V
-
65
-
ns
tf
Fall Time
RD=1.6Ω
-
104
-
ns
Ciss
Input Capacitance
VGS=0V
-
2800 4480
pF
Coss
Output Capacitance
VDS=25V
-
550
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
250
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.2
1.8
Ω
Min.
Typ.
IS=30A, VGS=0V
-
-
1.3
V
IS=30A, VGS=0V
-
72
-
ns
dI/dt=100A/µs
-
180
-
nC
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
Max. Units
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
2/4
AP75T10AGP
120
250
T C = 25 o C
T C = 150 C
100
ID , Drain Current (A)
ID , Drain Current (A)
200
7.0 V
150
100
5.0V
50
10V
7.0V
o
10V
80
5.0V
60
4.5V
40
V G = 4 .0V
4.5V
20
V G = 4 .0V
0
0
0
2
4
6
0
8
1
2
3
4
5
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
34
2.4
I D =16A
I D =30A
V G =10V
T C =25 o C
30
26
Normalized RDS(ON)
RDS(ON) (mΩ)
2.0
22
18
1.6
1.2
0.8
14
0.4
10
2
4
6
8
-50
10
0
50
100
150
T j , Junction Temperature ( o C)
V GS Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
40
1.4
1.2
30
o
IS(A)
T j =150 C
Normalized VGS(th) (V)
o
T j =25 C
20
1
0.8
10
0.6
0
0.4
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j ,Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
AP75T10AGP
f=1.0MHz
10000
I D = 30 A
12
V DS = 50 V
V DS = 64 V
V DS = 80 V
10
C iss
8
C (pF)
VGS , Gate to Source Voltage (V)
14
6
1000
C oss
4
C rss
2
0
100
0
20
40
60
80
1
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
29
V DS ,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (Rthjc)
1000
ID (A)
100
100us
1ms
10
10ms
o
T c =25 C
Single Pulse
100ms
1s
DC
1
0.1
1
10
100
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
0.02
t
0.01
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
1000
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4/4
ADVANCED POWER ELECTRONICS CORP.
Package Outline : TO-220
E1
A
E
Millimeters
SYMBOLS
φ
L2
L5
c1
D
L4
b1
L3
L
b
MIN
NOM
MAX
A
4.25
4.48
4.70
b
b1
c
c1
0.65
0.80
0.90
1.15
1.38
1.60
0.40
0.50
0.60
1.00
1.20
1.40
E
9.70
10.00
10.40
E1
---
---
11.50
L1
c
e
----
2.54
----
L
12.70
13.60
14.50
L1
2.60
2.80
3.00
L2
1.00
1.40
1.80
L3
2.6
3.10
3.6
L4
14.70
15.50
16
L5
6.30
6.50
6.70
φ
3.50
3.60
3.70
D
8.40
8.90
9.40
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
e
Part Marking Information & Packing : TO-220
Part Number
Package Code
75T10AGP
meet Rohs requirement
LOGO
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Se
quence