BCX70 Series Small Signal Transistor (NPN) t c u d ro TO-236AB (SOT-23) P w Ne .122 (3.1) .110 (2.8) .016 (0.4) Top View .056 (1.43) .052 (1.33) 3 Pin Configuration 1 = Base 2 = Emitter 3 = Collector .016 (0.4) .007 (0.175) .005 (0.125) max. .004 (0.1) 2 .037(0.95) .037(0.95) 0.037 (0.95) 0.037 (0.95) .016 (0.4) 0.079 (2.0) 0.035 (0.9) .045 (1.15) .037 (0.95) 1 Mounting Pad Layout 0.031 (0.8) .102 (2.6) .094 (2.4) Dimensions in inches and (millimeters) Dimensions in inches and (millimeters) Mechanical Data Features Case: SOT-23 Plastic Package Weight: approx. 0.008g Marking BCX70G = AG Code: BCX70H = AH BCX70J = AJ BCX70K = AK Packaging Codes/Options: E8/10K per 13” reel (8mm tape), 30K/box E9/3K per 7” reel (8mm tape), 30K/box • NPN Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. • Suited for low level, low noise, low frequency applications in hybrid circuits. • Low current, low voltage. • As complementary types, BCX71 Series PNP transistors are recommended. Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector-Base Voltage VCBO 45 V Collector-Emitter Voltage VCEO 45 V Emitter-Base Voltage VEBO 5.0 V Collector Current IC 200 mA Peak Base Current IB 50 mA Power Dissipation Ptot 250 mW Thermal Resistance Junction to Ambient Air RΘJA (1) 500 °C/W Junction Temperature Tj 150 °C Storage Temperature Range TS –65 to +150 °C Note: (1) Mounted on FR-4 printed-circuit board. 11/10/00 BCX70 Series Small Signal Transistor (NPN) Electrical Characteristics (T = 25°C unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit hFE VCE = 5 V, IC = 10 µA VCE = 5 V, IC = 10 µA VCE = 5 V, IC = 10 µA VCE = 5 V, IC = 10 µA VCE = 5 V, IC = 2 mA VCE = 5 V, IC = 2 mA VCE = 5 V, IC = 2 mA VCE = 5 V, IC = 2 mA VCE = 1 V, IC = 50 mA VCE = 1 V, IC = 50 mA VCE = 1 V, IC = 50 mA VCE = 1 V, IC = 50 mA — 30 40 100 120 180 250 380 50 70 90 100 — — — — — — — — — — — — — — — — 220 310 460 630 — — — — — Collector-Emitter Saturation Voltage VCEsat IC = 10 mA, IB = 0.25 mA IC = 50 mA, IB = 1.25 mA 50 100 — — 350 550 mV Base-Emitter Saturation Voltage VBEsat IC = 10 mA, IB = 0.25 mA IC = 50 mA, IB = 1.25 mA 600 700 — — 850 1050 mV Base-Emitter Voltage VBE VCE = 5 V, IC = 2 mA VCE = 5 V, IC = 10 µA VCE = 1 V, IC = 50 mA 550 — — 650 520 780 750 — — mV — 20 nA ICBO VCB = 45 V, VBE = 0 V VCB = 45 V, VBE = 0 V TA = 150°C — Collector Cut-off Current — — 20 µA Emitter Cut-off Current IEBO VEB = 4 V, IC = 0 — — 20 nA fT VCE = 5 V, IC = 10 mA f = 100 MHz 100 250 — MHz Collector-Base Capacitance CCBO VCB = 10 V, f = 1 MHz, IE = 0 — 2.5 — pF Emitter-Base Capacitance CEBO VEB = 0.5 V, f = 1 MHz, IC = 0 — 8 — pF F VCE = 5 V, IC = 200 µA, RS = 2 kΩ, f = 1 kHz, B = 200 Hz — 2 6 dB hfe VCE = 5 V, IC = 2 mA, f = 1.0 kHZ — — — — 200 260 330 520 Turn-on Time at RL = 990Ω (see fig. 1) ton VCC = 10 V, IC = 10 mA, IB(on) = -IB(off) = 1 mA — 85 150 ns Turn-off Time at RL = 990Ω (see fig. 1) toff VCC = 10 V, IC = 10 mA, IB(on) = -IB(off) = 1 mA — 480 800 ns J DC Current Gain BCX70G BCX70H BCX70J BCX70K BCX70G BCX70H BCX70J BCX70K BCX70G BCX70H BCX70J BCX70K Gain-Bandwidth Product Noise Figure Small Signal Current Gain BCX70G BCX70H BCX70J BCX70K BCX70 Series Small Signal Transistor (NPN) Ratings and Characteristic Curves Fig. 1 Switching Waveforms INPUT 90% 10% t off t on 10% 90% 90% OUTPUT 10% td tr ts tf