GE BCX70J Small signal transistor (npn) Datasheet

BCX70 Series
Small Signal Transistor (NPN)
t
c
u
d
ro
TO-236AB (SOT-23)
P
w
Ne
.122 (3.1)
.110 (2.8)
.016 (0.4)
Top View
.056 (1.43)
.052 (1.33)
3
Pin Configuration
1 = Base 2 = Emitter
3 = Collector
.016 (0.4)
.007 (0.175)
.005 (0.125)
max. .004 (0.1)
2
.037(0.95) .037(0.95)
0.037 (0.95)
0.037 (0.95)
.016 (0.4)
0.079 (2.0)
0.035 (0.9)
.045 (1.15)
.037 (0.95)
1
Mounting Pad Layout
0.031 (0.8)
.102 (2.6)
.094 (2.4)
Dimensions in inches and (millimeters)
Dimensions in inches and (millimeters)
Mechanical Data
Features
Case: SOT-23 Plastic Package
Weight: approx. 0.008g
Marking
BCX70G = AG
Code:
BCX70H = AH
BCX70J = AJ
BCX70K = AK
Packaging Codes/Options:
E8/10K per 13” reel (8mm tape), 30K/box
E9/3K per 7” reel (8mm tape), 30K/box
• NPN Silicon Epitaxial Planar Transistors for
switching and AF amplifier applications.
• Suited for low level, low noise, low frequency
applications in hybrid circuits.
• Low current, low voltage.
• As complementary types, BCX71 Series PNP
transistors are recommended.
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol
Value
Unit
Collector-Base Voltage
VCBO
45
V
Collector-Emitter Voltage
VCEO
45
V
Emitter-Base Voltage
VEBO
5.0
V
Collector Current
IC
200
mA
Peak Base Current
IB
50
mA
Power Dissipation
Ptot
250
mW
Thermal Resistance Junction to Ambient Air
RΘJA
(1)
500
°C/W
Junction Temperature
Tj
150
°C
Storage Temperature Range
TS
–65 to +150
°C
Note: (1) Mounted on FR-4 printed-circuit board.
11/10/00
BCX70 Series
Small Signal Transistor (NPN)
Electrical Characteristics (T
= 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
hFE
VCE = 5 V, IC = 10 µA
VCE = 5 V, IC = 10 µA
VCE = 5 V, IC = 10 µA
VCE = 5 V, IC = 10 µA
VCE = 5 V, IC = 2 mA
VCE = 5 V, IC = 2 mA
VCE = 5 V, IC = 2 mA
VCE = 5 V, IC = 2 mA
VCE = 1 V, IC = 50 mA
VCE = 1 V, IC = 50 mA
VCE = 1 V, IC = 50 mA
VCE = 1 V, IC = 50 mA
—
30
40
100
120
180
250
380
50
70
90
100
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
220
310
460
630
—
—
—
—
—
Collector-Emitter Saturation Voltage
VCEsat
IC = 10 mA, IB = 0.25 mA
IC = 50 mA, IB = 1.25 mA
50
100
—
—
350
550
mV
Base-Emitter Saturation Voltage
VBEsat
IC = 10 mA, IB = 0.25 mA
IC = 50 mA, IB = 1.25 mA
600
700
—
—
850
1050
mV
Base-Emitter Voltage
VBE
VCE = 5 V, IC = 2 mA
VCE = 5 V, IC = 10 µA
VCE = 1 V, IC = 50 mA
550
—
—
650
520
780
750
—
—
mV
—
20
nA
ICBO
VCB = 45 V, VBE = 0 V
VCB = 45 V, VBE = 0 V
TA = 150°C
—
Collector Cut-off Current
—
—
20
µA
Emitter Cut-off Current
IEBO
VEB = 4 V, IC = 0
—
—
20
nA
fT
VCE = 5 V, IC = 10 mA
f = 100 MHz
100
250
—
MHz
Collector-Base Capacitance
CCBO
VCB = 10 V, f = 1 MHz, IE = 0
—
2.5
—
pF
Emitter-Base Capacitance
CEBO
VEB = 0.5 V, f = 1 MHz, IC = 0
—
8
—
pF
F
VCE = 5 V, IC = 200 µA,
RS = 2 kΩ, f = 1 kHz,
B = 200 Hz
—
2
6
dB
hfe
VCE = 5 V, IC = 2 mA,
f = 1.0 kHZ
—
—
—
—
200
260
330
520
Turn-on Time at RL = 990Ω (see fig. 1)
ton
VCC = 10 V, IC = 10 mA,
IB(on) = -IB(off) = 1 mA
—
85
150
ns
Turn-off Time at RL = 990Ω (see fig. 1)
toff
VCC = 10 V, IC = 10 mA,
IB(on) = -IB(off) = 1 mA
—
480
800
ns
J
DC Current Gain
BCX70G
BCX70H
BCX70J
BCX70K
BCX70G
BCX70H
BCX70J
BCX70K
BCX70G
BCX70H
BCX70J
BCX70K
Gain-Bandwidth Product
Noise Figure
Small Signal Current Gain
BCX70G
BCX70H
BCX70J
BCX70K
BCX70 Series
Small Signal Transistor (NPN)
Ratings and Characteristic Curves
Fig. 1 Switching Waveforms
INPUT
90%
10%
t off
t on
10%
90%
90%
OUTPUT
10%
td
tr
ts
tf
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