ALSC AS4C14400 1m-bit ã 4 cmos dram (fast page mode or edo) Datasheet

High Performance
1M×4
CMOS DRAM
AS4C14400
AS4C14405
®
1M-bit × 4 CMOS DRAM (Fast page mode or EDO)
Preliminary information
Features
• 1024 refresh cycles, 16 ms refresh interval
• Organization: 1,048,576 words × 4 bits
• High speed
- RAS-only or CAS-before-RAS refresh
• Read-modify-write
• TTL-compatible, three-state I/O
• JEDEC standard packages
- 40/50/60/70 ns RAS access time
- 20/25/30/35 ns column address access time
- 10/13/15/18 ns CAS access time
• Low power consumption
- 300 mil, 20/26-pin SOJ
- 300 mil, 20/26-pin TSOP
- Active: 385 mW max (-60)
- Standby: 5.5 mW max, CMOS I/O
• Fast page mode (AS4C14400) or EDO (AS4C14405)
• Single 5V power supply
• ESD protection ≥ 2001V
• Latch-up current ≥ 200 mA
Pin arrangement
Pin designation
SOJ
TSOP
I/O0
I/O1
WE
RAS
A9
1
2
3
4
5
26
25
24
23
22
GND
I/O3
I/O2
CAS
OE
I/O0
I/O1
WE
RAS
A9
1
2
3
4
5
26
25
24
23
22
GND
I/O3
I/O2
CAS
OE
A0
A1
A2
A3
VCC
9
10
11
12
13
18
17
16
15
14
A8
A7
A6
A5
A4
A0
A1
A2
A3
VCC
9
10
11
12
13
18
17
16
15
14
A8
A7
A6
A5
A4
Pin(s)
Description
A0 to A9
Address inputs
RAS
Row address strobe
I/O0 to I/O3
Input/output
OE
Output enable
CAS
Column address strobe
WE
Read/write control
VCC
Power (5.0 ± 0.5V)
GND
Ground
Selection guide
Symbol
4C14400-40
4C14400-50
4C14400-60
4C14400-70
Unit
Maximum RAS access time
tRAC
40
50
60
70
ns
Maximum column address access time
tCAA
20
25
30
35
ns
Maximum CAS access time
tCAC
10
13
15
18
ns
Maximum output enable (OE) access time
tOEA
10
13
15
18
ns
Minimum read or write cycle time
tRC
70
90
110
130
ns
Minimum fast page mode cycle time
tPC
30
35
40
45
ns
Maximum operating current
ICC1
90
80
70
60
mA
Maximum CMOS standby current
ICC5
1.0
1.0
1.0
1.0
mA
Shaded areas contain advance information.
ALLIANCE SEMICONDUCTOR
AS4C14400
®
Functional description
The AS4C14400 is a high performance CMOS Dynamic Random Access Memory organized as 1,048,576 words × 4 bits. The AS4C14400 is
fabricated with advanced CMOS technology and designed with innovative design techniques resulting in high speed, extremely low power
and wide operating margins at component and system levels.
The AS4C14400 features a high speed page mode operation in which high speed read, write and read-write are performed on any of the
1024 × 4 bits defined by the column address. The asynchronous column address uses an extremely short row address capture time to ease
the system level timing constraints associated with multiplexed addressing. Output is tri-stated by a column address strobe (CAS) which acts
as an output enable independent of RAS. Very fast CAS to output access time eases system design.
Refresh on the 1024 address combinations of A0 to A9 during a 16 ms period is accomplished by performing any of the following:
• RAS-only refresh cycles
• Hidden refresh cycles
• CAS-before-RAS refresh cycles
• Normal read or write cycles
The AS4C14400 is available in JEDEC standard 20/26-pin plastic SOJ and 20/26-pin plastic TSOP packages. System level features include
single power supply of 5.0 ± 0.5V tolerance and direct interface with TTL logic families.
REFRESH
CONTROLLER
Logic block diagram
RAS
RAS clock
generator
CAS
CAS clock
generator
WE
WE clock
generator
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
Sense amp
OE
Row decoder
GND
I/O3
I/O2
I/O1
I/O0
Data
I/O
Column decoder
Address buffer
Vcc
1024 × 1024 × 4
Array
(4,194,304)
Recommended operating conditions
Parameter
Supply voltage
Input voltage
Operating temperature
Symbol
Minimum
Nominal
Maximum
Unit
VCC
4.5
5.0
5.5
V
GND
0.0
0.0
0.0
V
VIH
2.4
–
VCC + 1
V
VIL
–1.0
–
0.8
V
TA
0
70
°C
Recommended operating conditions apply to all specifications unless otherwise noted.
2
AS4C14400
®
Absolute maximum ratings
Parameter
Symbol
Minimum
Maximum
Unit
Input voltage
Vin
-1.0
+7.0
V
Output voltage
Vout
-1.0
+7.0
V
Power supply voltage
VCC
-1.0
+7.0
V
Storage temperature (plastic)
TSTG
-55
+150
°C
Soldering temperature × time
TSOLDER
–
260 × 10
o
Power dissipation
PD
–
1
W
DC output current
Iout
–
50
mA
C × sec
NOTE: Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect reliability.
DC electrical characteristics
-40
Parameter
Symbol Test Conditions
Input leakage current
II
Output leakage current
-60
-70
Max
Min
Max
Min
Max
Min
Max
Unit Notes
0V ≤ Vin ≤ +5.5V
-2
Pins not under test = 0V
+2
-2
+2
-2
+2
-2
+2
µA
IOZ
Outputs disabled,
0V ≤ Vout ≤ +5.5V
-10
+10 -10
+10 -10
+10 -10
+10 µA
Operating power
supply current
ICC1
RAS, CAS, Address
cycling: tRC=min
–
90
–
80
–
70
–
60
mA
TTL standby power
supply current
ICC2
RAS = CAS = VIH
–
2.0
–
2.0
–
2.0
–
2.0
mA
Average power supply
I
current, RAS refresh mode CC3
RAS cycling, CAS = VIH,
–
tRC = min
90
–
80
–
70
–
60
mA
1
Fast page mode average
power supply current
ICC4
RAS = VIL, CAS cycling,
Address cycling:
tPC = min
–
80
–
70
–
60
–
50
mA
1,2
CMOS standby power
supply current
ICC5
RAS = CAS = VCC - 0.2V –
1.0
–
1.0
–
1.0
–
1.0
mA
CAS-before-RAS refresh
power supply current
ICC6
RAS, CAS cycling:
tRC = min
–
90
–
80
–
70
–
60
mA
VOH
IOUT = -5.0 mA
2.4
–
2.4
–
2.4
–
2.4
–
V
VOL
IOUT = 4.2 mA
–
0.4
–
0.4
–
0.4
–
0.4
V
Output voltage
Min
-50
1,2
1
Shaded areas contain advance information.
3
AS4C14400
®
AC parameters common to all waveforms
-40
-50
-60
-70
Symbol
Parameter
Min
Max
Min
Max
Min
Max
Min
Max
Unit
tRC
Random read or write cycle time
70
–
90
–
110
–
130
–
ns
tRP
RAS precharge time
20
–
30
–
40
–
50
–
ns
tRAS
RAS pulse width
40
10K
50
10K
60
10K
70
10K
ns
tCAS
CAS pulse width
10
–
13
–
15
–
18
–
ns
tRCD
RAS to CAS delay time
18
30
20
37
20
45
20
52
ns
6
tRAD
RAS to column address delay time
13
20
15
25
15
30
15
35
ns
7
tRSH(R)
CAS to RAS hold time (read)
10
–
13
–
15
–
18
–
ns
tCSH
RAS to CAS hold time
40
–
50
–
60
–
70
–
ns
tCRP
CAS to RAS precharge time
0
–
0
–
0
–
0
–
ns
tASR
Row address setup time
0
–
0
–
0
–
0
–
ns
tRAH
Row address hold time
8
–
10
–
10
–
10
–
ns
tT
Transition time (rise and fall)
2
50
2
50
2
50
2
50
ns
4,5
tREF
Refresh period
–
16
–
16
–
16
–
16
ms
3
tCLZ
CAS to output in low Z
0
–
0
–
0
–
0
–
ns
8
Notes
Shaded areas contain advance information.
Read cycle
-40
-50
-60
-70
Min
Max
Min
Max
Min
Max
Min
Max
Unit
Notes
Access time from RAS
–
40
–
50
–
60
–
70
ns
6
tCAC
Access time from CAS
–
10
–
13
–
15
–
18
ns
6,13
tAA
Access time from address
–
20
–
25
–
30
–
35
ns
7,13
tAR(R)
Column add hold from RAS
30
–
40
–
45
–
55
–
ns
tRCS
Read command setup time
0
–
0
–
0
–
0
–
ns
tRCH
Read command hold time to CAS
0
–
0
–
0
–
0
–
ns
9
tRRH
Read command hold time to RAS
0
–
0
–
0
–
0
–
ns
9
tRAL
Column address to RAS lead time
20
–
25
–
30
–
35
–
ns
tCPN
CAS precharge time
5
–
10
–
10
–
10
–
ns
tODS
Output disable setup time
0
–
0
–
0
–
0
–
ns
tOFF
Output buffer turn-off time
0
10
0
13
0
15
0
18
ns
Symbol
Parameter
tRAC
Shaded areas contain advance information.
4
8,10
AS4C14400
®
Write cycle
-40
Symbol
Parameter
tASC
-50
-60
-70
Min
Max
Min
Max
Min
Max
Min
Max
Unit
Column address setup time
0
–
0
–
0
–
0
–
ns
tCAH
Column address hold time
8
–
10
–
10
–
15
–
ns
tAWR
Column address hold time to RAS
30
–
40
–
45
–
55
–
ns
tWCS
Write command setup time
0
–
0
–
0
–
0
–
ns
11
tWCH
Write command hold time
5
–
10
–
10
–
15
–
ns
11
tWCR
Write command hold time to RAS
30
–
40
–
45
–
55
–
ns
tWP
Write command pulse width
8
–
10
–
10
–
15
–
ns
tRWL
Write command to RAS lead time
10
–
13
–
15
–
18
–
ns
tCWL
Write command to CAS lead time
10
–
13
–
15
–
18
–
ns
tDS
Data-In setup time
0
–
0
–
0
–
0
–
ns
12
tDH
Data-In hold time
8
–
10
–
10
–
15
–
ns
12
tDHR
Data-In hold time to RAS
30
–
40
–
45
–
55
–
ns
Notes
Shaded areas contain advance information.
Read-modify-write cycle
-40
-50
-60
-70
Symbol
Parameter
Min
Max
Min
Max
Min
Max
Min
Max
Unit
tRWC
Read-write cycle time
105
–
131
–
155
–
181
–
ns
tRWD
RAS to WE delay time
60
–
73
–
85
–
98
–
ns
11
tCWD
CAS to WE delay time
30
–
36
–
40
–
46
–
ns
11
tAWD
Column address to WE delay time
40
–
48
–
55
–
63
–
ns
11
tRSH(W)
CAS to RAS hold time (write)
10
–
13
–
15
–
18
–
ns
tCAS(W)
CAS pulse width (write)
10
–
13
–
15
–
18
–
ns
Notes
Shaded areas contain advance information.
5
AS4C14400
®
Fast page mode cycle
-40
-50
-60
-70
Symbol
Parameter
Min
Max
Min
Max
Min
Max
Min
Max
Unit
Notes
tPC
Read-write cycle time
(fast page)
30
–
35
–
40
–
45
–
ns
14
tCAP
Access time from CAS precharge
–
25
–
30
–
35
–
40
ns
13
tCP
CAS precharge time
(fast page)
5
–
10
–
10
–
10
–
ns
tPCM
Fast page mode RMW cycle
65
–
76
–
85
–
96
–
ns
tCRW
Page mode CAS pulse width
(RMW)
45
–
54
–
60
–
69
–
ns
tRASP
RAS pulse width
40
100K
50
100K
60
100K
70
100K
ns
Shaded areas contain advance information.
Refresh cycle
-40
-50
-60
-70
Symbol
Parameter
Min
Max
Min
Max
Min
Max
Min
Max
Unit
Notes
tCSR
CAS setup time (CAS-before-RAS)
10
–
10
–
10
–
10
–
ns
3
tCHR
CAS hold time (CAS-before-RAS)
10
–
10
–
15
–
15
–
ns
3
tRPC
RAS precharge to CAS hold time
0
–
0
–
0
–
0
–
ns
tCPT
CAS precharge time
(CAS-before-RAS counter test)
5
–
10
–
10
–
10
–
ns
Shaded areas contain advance information.
Output enable
-40
Std
Symbol
Parameter
tROH
-50
-60
-70
Min
Max
Min
Max
Min
Max
Min
Max
Unit
RAS hold time referenced to OE
5
–
10
–
10
–
10
–
ns
tOEA
OE access time
–
10
–
13
–
15
–
18
ns
tOED
OE to data delay
10
–
13
–
15
–
18
–
ns
tOEZ
Output buffer turnoff delay
from OE
–
10
–
13
–
15
–
18
ns
tOEH
OE command hold time
10
–
13
–
15
–
18
–
ns
Shaded areas contain advance information.
6
Notes
8, 10
AS4C14400
®
Notes
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
ICC1, ICC3, ICC4, and ICC6 depend on cycle rate.
ICC1 and ICC4 depend on output loading. Specified values are obtained with the output open.
An initial pause of 200 µs is required after power-up followed by any 8 RAS cycles before proper device operation is achieved. In the case of an internal
refresh counter, a minimum of 8 CAS-before-RAS initialization cycles instead of 8 RAS cycles are required. 8 initialization cycles are required after
extended periods of bias without clocks (greater than 16 ms).
AC Characteristics assume tT = 5 ns. All AC parameters are measured with a load equivalent to two TTL loads and 100 pF, V IL (min) ≥ GND and VIH
(max) ≤ VCC. See AC test conditions for more information.
VIH (min) and VIL (max) are reference levels for measuring timing of input signals. Transition times are measured between V IH and VIL .
Operation within the t RCD (max) limit ensures that tRAC (max) can be met. tRCD (max) is specified as a reference point only. If tRCD is greater than the
specified tRCD (max) limit, then access time is controlled exclusively by tCAC.
Operation within the t RAD (max) limit ensures that tRAC (max) can be met. tRAD (max) is specified as a reference point only. If tRAD is greater than the
specified tRAD (max) limit, then access time is controlled exclusively by tAA.
Assumes three state test load (5 pF and a 380 Ω Thevenin equivalent).
Either tRCH or tRRH must be satisfied for a read cycle.
tOFF (max) defines the time at which the output achieves the open circuit condition; it is not referenced to output voltage levels.
tWCS, tWCH , tRWD, tCWD and tAWD are not restrictive operating parameters. They are included in the datasheet as electrical characteristics only. If t WCS ≥
tWCS (min) and tWCH ≥ tWCH (min), the cycle is an early write cycle and data out pins will remain open circuit, high impedance, throughout the cycle.
If tRWD ≥ tRWD (min), tCWD ≥ tCWD (min) and tAWD ≥ tAWD (min), the cycle is a read-write cycle and the data out will contain data read from the
selected cell. If neither of the above conditions is satisfied, the condition of the data out at access time is indeterminate.
These parameters are referenced to CAS leading edge in early write cycles and to WE leading edge in read-write cycles.
Access time is determined by the longest of tCAA or tCAC or tCAP.
tASC ≥ tCP to achieve t PC (min) and tCAP (max) values.
These parameters are sampled and not 100% tested.
AC test conditions
- Access times are measured with output reference
levels of VOH = 2V and VOL = 0.8 V
- Input rise and fall times: 5 ns
+3.0V
+5V
R1 = 828W
Dout
90%
10%
90%
100 pF*
10%
Don’t care input
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AA
AAAA
AA Rising input
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AA
*including scope
and jig capacitance
GND
Figure B: Equivalent output load
Figure A: Input waveform
Key to switching waveforms AAAAAA
R2 = 295W
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AA
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A
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Falling input
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Undefined output
7
AS4C14400
®
Timing waveform of read cycle
tRC
tRAS
tRCD
tRSH
tRP
RAS
tCSH
tCRP
tCAH
tASC
tRCS
tCAS
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AAAA
AAAA
CAS
AAAA
AAAAAAAA
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AAA
AAAAAAAAAAA
tAR
tRAD
AAAAAAAAAA
Address AAAA
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AAAAAA
AA
tRAH
t ASR
Row
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tRAL
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Column
tRRH
tRCH
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AA
WE AAAA
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tROH
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OE AAAA
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t OEZ
tRAC
tAA
tOEA
tOFF
tCAC
tCLZ
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AAAA
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AAA
I/O
Data Out
Timing waveform of early write cycle
tRC
tRAS
tRP
RAS
tCSH
tRSH
tCRP
tRCD
tCAS
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AAAA
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CAS
AAAA
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AA
AAAA
AAAAAA
AA
tAWR
tRAD
t RAL
tASC
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Address AAAA
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tASR
tRAH
Row
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Column
tWCR
t CWL
tRWL
tWP
tWCS
tWCH
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tDHR
tDS
I/O
8
tDH
Data In
AS4C14400
®
Timing waveform of write cycle
(OE controlled)
tRC
tRAS
tRP
RAS
tCSH
tRSH
tCRP
tRCD
t CAS
AAAAA
AAAA
AAAAAA
AAAAA
CAS
AAAAAA
AAAA
AAAAAA
AA
AAAAAA
t RAL
tAWR
tRAD
tRAH
tASR
Address
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A
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tASC
tCAH
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AA
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Row
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Column
tWCR
tRWL
tCWL
WE
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OE
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tWP
tOEH
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AA
t DHR
tOED
I/O
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t DS
AAAA
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AA
Data In
Timing waveform of read-write cycle
tRWC
tRAS
tRP
RAS
tCAS
tCRP
tRCD
tRSH
CAS
tAR
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AAAA
AAAA
AAAAAAAA
AAAA
tCSH
AAAA
AA
AAAA
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AA
t RAL
tRAD
AAAAAAAA
AA
Address AAAA
AAAAAAAA
AAAAAA
AA
AAAA
AAAA
AA
tRAH
tASR
Row
tASC
AAAA
AAAAA
AAAA
AAAAAAAA
AAAAA
A
AAAA
AAAA
A
tCAH
Column
tRWD
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAA
A
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
A
tRWL
t AWD
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAA
WE AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAA
AA
tRCS
tCWL
tCWD
tOEA
tOEZ
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAA
OE AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAA
tWP
AAAA
AAAAAAAA
AAAAAAAA
AAAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAA
A
tOED
tRAC
tAA
tCAC
tCLZ
I/O
AAA
AAA
AAA
Data Out
tDS
tDH
AAAA
AAAA
AAAA
Data In
AAAA
AAAAAAAA
AAAAAAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAA
9
AS4C14400
®
Timing waveform of fast page mode read cycle
tRASP
tRP
RAS
tCSH
tCRP
tRCD
tRSH
AAAA
AAAA
AAAA
AAAA
CAS
tCAS
tCP
tPC
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
tAR
tRAD
tASR
Address
AAAA
AAAAAAAA
AAAAAAAA
AAAAAA
AA
AAAAAAAAAAAAAA
tRAL
tASC
tRAH
AAAA
AAAAAAAA
AAAAAAA
AAA Column AAAA
AAAAAAAA
AAAA
AAAAAAAAAAA
AAAAAAAA
Row
tRCS
tRCH
WE
AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAA
AAA
AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA
AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAA
tOEA
OE
AAAA
AAAAAAAA
AAAAAA
AA
AAAAAAAAAA Column
Column
tRCS
AAAAAA
AAAA
AAAAAA
AA
AAAAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAA
A
AAAAAAAAAAAAAAAAAAAAAAAAA
tRRH
tRCH
AAAAAAA
AAAA
AAAAAAA
AAA
AAAAAAA
AAAAAA
AAAA
AAAAAA
AA
tRAC
AAAAAAAAAAAAAAAAAAAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAA
A
AAAAAAAAAAAAAAAAAAAAA
tOEA
AAAAAAAAAA
AAAA
AAAAAAAA
AAAAAA
AA
AAAAAAAAAAAAAAAAAAAAAAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAA
tOEZ
tCLZ
tCAP
tOFF
tAA
AAAA
AAAA Data Out
AAAA
AAAA
I/O
tCAH
tCAC
AAA
AAA Data Out
AAA
AAA
AAAA
AAAA Data Out
AAAA
AAAA
Timing waveform of fast page mode early write cycle
tRASP
tRAH
tRWL
RAS
tCRP
tRCD
tPC
tCSH
tCAS
AAAA
AAAAA
A
AAAA
AAAAA
A
CAS
Address
AAAAAAAAAA
AAAA
AAAAAAAA
AAAAAA
AA
tRAD
Row
AAAAAAAAA
AAAA
AAAAAAAA
AAAAA
A
Column
tCP
tWCS
AAAA
AAAAAA
AAAA
AAAAAA
tAR
tASR
tCAH
tASC
AAAAAAAA
AAAA
AAAAAAAA
AAAA
Column
AAAA
AAAA
AAAA
AAAA
tRSH
tRAL
AAAAAA
AAAA
AAAAAA
AA
AAAAAAAAAAAAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAA
AA
Column
tCWL
tWP
WE
AAAA
AAAAAAAA
AAAAAAAA
A
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAA
A
AAAA
AAAAAAA
AAAA
AAAAAAAA
AAAAAAA
AAA
AAAA
AAAA
AAAA
AAAA
AAAAAAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAA
OE
tWCH
AAAA
AAAAAAAA
AAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAA
AAA
AAAA
AAAA
AAAA
AAAA
AAAAAAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAA
tHDR
10
AAAA
AAAAAAAA
AAAAAAAA
AAAAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAA
AA
AAAA
AAAAAAAA
AA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAA
AA
AAAA
AAAA
AAAA
AAAA
AAAA
AA
AAAA
AAAAAAAA
AAAAAAAA
AA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAA
AA
tOED
tDH
tDS
I/O
tOEH
Data In
AAAA
AAAAAA
AAAA
AAAAAAAA
AAAAA
Data In
AAAA
AAAAAA
AAAA
AAAAAAAA
AAAAA
Data In
AAAA
AAAA
AAAA
AAAAAAAA
AAAA
AS4C14400
®
Timing waveform of fast page mode read-write cycle
t RASP
tRP
RAS
tPCM
tCSH
tRCD
CAS
tRAD
tASR
tCAS
AAAA
AAAA
AAAA
AAAA
tCP
tRAL
tRAH
tCAH
Address
AAAAAAAAA
AAAAA
AAAAAAAAAAAAAAAAAA
AAAA
AAAAAAAA
AAAAA
A Row AAAA
AAAAA
A Column AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAA
AA Column
AAAAAAAAA
AAAAA
AAAAAAAAAAAAAAAAAA
tRWD
tRCS
WE
tCWL
t CWD
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAA
AAAAAAAAAAAAAAAAAAAA
tCRP
AAAA
AAAA
AAAA
AAAA
tCAH
AAAAAAAAAAAAAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAA
AAA
AAAAAAAAAAAAAAA
tCAH
Column
tRWL
tCWD
tCWD
t AWD
t OEA
tAWD
tOEZ
AAAAAAAAAAAAAAAAAAAAAAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAA
AAAAAAAAAAAAAAAAAAAAAAAA
tOED
tCWL
tWP
tOEA
OE
tAA
tDH
tRAC
tCLZ
AAA
AAA
AAA
AAA
I/O
tCAP
tDS
tDS
tCLZ
tCAC
AAAA
AAAAA
A Data In
AAAA
AAAAA
A
Data Out
AAA
AAA
AAA
AAA
tCLZ
tCAC
AAAA
AAAAAA Data In
AAAA
AAAAAA
Data Out
AAA
AAA
AAA
AAA
tCAC
AAAA
AAAAAA
AAAA
AAAAAA
Data
Out
Timing waveform of RAS only refresh cycle
Data In
(WE = OE = VIH or VIL)
t RC
tRAS
tRP
RAS
CAS
Address
tCRP
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAA
A
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAA
A
tARS
AAAAAAAAAAAAAAAAAAAAAAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAA
t RPC
tRAH
Row
AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAA
AAA
Timing waveform of CAS-before-RAS refresh cycle
(WE = OE = VIH or VIL)
tRC
tRP
tRAS
RAS
t RPC
tCHR
tCPN
tCSR
CAS
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAA
AA
tOFF
I/O
11
AS4C14400
®
Timing waveform of hidden refresh cycle (read)
tRC
tRC
tRAS
tPR
tRAS
tPR
RAS
tCRP
tCHR
tRCD
tRSH
AAA
AAA
AAA
CAS
tCRP
tAR
tRAD
tRAH
t ASC
t ASR
Address
AAAA
AAAA
AAAAAA
AA
AAAAAAAA
AAAA
AAAAAA Row AAAAAAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAA
A
AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA
Column
tRCS
t RRH
WE
AAAAAAAAAAAAAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAA
AAA
AAAAAAAAAAAAAAA
OE
AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAA
AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAA
AA
AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA
tOEA
AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAA
tRAC
tAA
AA
AA
AA
I/O
tCAC
tOFF
tCLZ
tOEZ
Data Out
Timing waveform of hidden refresh cycle (write)
tRC
tRAS
tRP
RAS
tCRP
tRCD
tRSH
AAAA
AAAAAA
AA
AAAA
AAAAAA
AA
CAS
tAR
tRAD
tRAH
tRAL
tASR
Address
AAAA
AAAA
AAAA
AAAAA
A
AAAA
AAAAAAAA
AAAAA
A
tASC
tCAH
Row
AAAA
A
AAAA
A
AAAA
AAAAA
A
Column
AAAA
AAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAA
AA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAA
AA
t RWL
tWCR
tWP
tWCS
tWCH
AAAAAAAAAAAAAAAAAAAAAAAAAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAA
AAAAAAAA
AAAAAAAAAAAA
AAAAAAAAAAAA
AAAAAAA
WE AAAA
AAAAAAAAAAAA
AAAAAAAAAAAA
AAAAAAAAAAA
AAA
tDS
AAAAAAAA
AAAAAAAA
AAAAAAA
I/O AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAA
AAA
tDH
tDHR
Data In
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAA
AAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAA
OE AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAA
AA
12
AS4C14400
®
Timing waveform of CAS before RAS refresh counter test cycle
tRAS
tRP
tRSH
RAS
tCSR
tCPT
tCAS
tCHR
AAAA
AAAA
AAAA
CAS
tRAL
Address
tCAH
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAA
AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAA
AAA
AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA
Column
tAA
tCAC
tCLZ
AA
AA
AA
Read Cycle
I/O
WE
AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAA
AA
tOFF
Data Out
tRRH
tRCH
tRCS
AAAAAAAAAAAAAAAAAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAA
AAA
tROH
tOEA
OE
AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAA
AAA
AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAA
AA
tRWL
t CWL
Write Cycle
tWP
tWCH
WE
tWCS
AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAA
AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAA
t DH
tDS
I/O
OE
Data In
AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAA
tRCS
tWP
tCWD
Read-Write Cycle
WE
tAWD
AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAA
AA
tCWL
tOEA
OE
tOED
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAA
AAA
t AA
tCLZ
tDH
tOEZ
tCAC
I/O
AAAAAAAAAAAAAAAAAAAAAAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAA
AAA
Data Out AAAA
AAA
AAAA
AAA
AAAA
tDS
Data In
13
AS4C14400
®
Typical DC and AC characteristics
1.2
1.1
1.0
0.9
70
4.5
5.0
5.5
Supply voltage (V)
Typical supply current ICC
vs. supply voltage VCC
Supply current (mA)
Supply current (mA)
30
20
10
4.5
5.0
5.5
Supply voltage (V)
Typical refresh current ICC3
vs. supply voltage VCC
40
30
20
10
6.0
-50
50
-40
40
30
100
150
200
Load capacitance (pF)
250
Typical power-on current IPO
vs. cycle rate 1/tRC
70
60
40
30
20
40
30
20
10
0.0
2
Typical refresh current ICC3
vs. ambient temperature Ta
4
6
8
Cycle rate (MHz)
10
Typical TTL stand-by current ICC2
vs. supply voltage VCC
3.5
3.0
50
40
30
20
0.0
–55
50
–10
35
80
125
Ambient temperature (°C)
10
4.5
5.0
5.5
Supply voltage (V)
-60
60
50
60
50
70
20
50
70
80
–10
35
80
125
Ambient temperature (°C)
Typical supply current ICC
vs. ambient temperature Ta
0.0
–55
6.0
Refresh current (mA)
Refresh current (mA)
0.9
10
60
14
1.0
60
40
0.0
4.0
1.1
70
50
70
1.2
0.8
–55
6.0
60
0.0
4.0
1.3
Power-on current (mA)
0.8
4.1
1.4
Typical access time tRAC
vs. load capacitance CL
90
Stand-by current (mA)
1.3
Ta = 25°C
Normalized access time tRAC
vs. ambient temperature Ta
Typical access time (ns)
1.4
1.5
Normalized access time
Normalized access time
1.5
Normalized access time tRAC
vs. supply voltage VCC
2.5
2.0
1.5
1.0
0.5
0.0
–10
35
80
125
Ambient temperature (°C)
2
4
6
8
Supply voltage (V)
10
AS4C14400
®
2.5
2.0
1.5
1.0
0.5
0.0
60
50
40
30
20
10
0.0
0
20
40
60
80
Ambient temperature (°C)
0
20
40
60
80
Ambient temperature (°C)
Capacitance
Parameter
Input capacitance
I/O capacitance
Typical fast page mode current ICC4
vs. supply voltage VCC
70
Fast page mode current (mA)
3.0
Stand-by current (mA)
Typical fast page mode current ICC4
vs. ambient temperature Ta
70
Fast page mode current (mA)
Typical TTL stand-by current ICC2
vs. ambient temperature Ta
3.5
60
50
40
30
20
10
0.0
4.0
4.5
5.0
5.5
Supply voltage (V)
6.0
(f = 1 MHz, Ta = Room Temperature)
Symbol
Signals
Test Conditions
Max
Unit
CIN1
A0 to A8
Vin = 0V
5
pF
CIN2
RAS, CAS, WE, OE
Vin = 0V
7
pF
CI/O
I/O0 to I/O3
Vin = Vout = 0V
7
pF
15
AS4C14400
®
Ordering codes
Package \ RAS Access Time
40 ns
50 ns
60 ns
70 ns
Plastic SOJ, 300 mil, 20/26-pin
AS4C14400-40JC
AS4C14405-40JC
AS4C14400-50JC
AS4C14405-50JC
AS4C14400-60JC
AS4C14405-60JC
AS4C14400-70JC
AS4C14405-70JC
Plastic TSOP, 300 mil, 20/26-pin
AS4C14400-40TC
AS4C14405-40TC
AS4C14400-50TC
AS4C14405-50TC
AS4C14400-60TC
AS4C14405-60TC
AS4C14400-70TC
AS4C14405-70TC
Shaded areas contain advance information.
Part numbering system
AS4C
DRAM Prefix
14400
Device number
–XX
X
RAS access time
C
Package:
J = SOJ 300 mil,
T = TSOP 300 mil
Commercial temperature range, 0°C to 70 °C
Representatives, distributors, and sales offices
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Please contact your rep to
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