TO 3P BYV415K-600P Dual ultrafast power diode 24 December 2014 Product data sheet 1. General description Dual ultrafast power diode in a SOT1259 (3-lead TO-3P) plastic package. 2. Features and benefits • • • • Very low on-state loss Fast switching Low leakage current Low thermal resistance 3. Applications • • Active PFC in air conditioner Interleaved PFC topology in switched-mode power supplies 4. Quick reference data Table 1. Quick reference data Symbol Parameter VRRM repetitive peak reverse voltage IF(AV) average forward current Conditions Min Typ Max Unit - - 600 V - - 15 A IF = 15 A; Tj = 150 °C; Fig. 6 - 1.1 1.4 V IF = 1 A; VR = 30 V; dIF/dt = 100 A/µs; - 25 50 ns δ = 0.5; Tmb ≤ 126 °C; square-wave pulse; Fig. 1; Fig. 2; Fig. 3 Static characteristics VF forward voltage Dynamic characteristics trr reverse recovery time Tj = 25 °C; Fig. 7 Scan or click this QR code to view the latest information for this product BYV415K-600P NXP Semiconductors Dual ultrafast power diode 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 A1 anode 1 2 K cathode 3 A2 anode 2 mb mb mounting base; connected to cathode Graphic symbol A1 A2 K 1 2 sym125 3 TO3P (SOT1259) 6. Ordering information Table 3. Ordering information Type number BYV415K-600P Package Name Description Version TO3P Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO3P SOT1259 7. Marking Table 4. Marking codes Type number Marking code BYV415K-600P BYV415K-600P BYV415K-600P Product data sheet All information provided in this document is subject to legal disclaimers. 24 December 2014 © NXP Semiconductors N.V. 2014. All rights reserved 2 / 11 BYV415K-600P NXP Semiconductors Dual ultrafast power diode 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VRRM Conditions Min Max Unit repetitive peak reverse voltage - 600 V VRWM crest working reverse voltage - 600 V VR reverse voltage DC - 600 V IF(AV) average forward current δ = 0.5; Tmb ≤ 126 °C; square-wave - 15 A - 30 A - 15 A - 140 A - 155 A pulse; Fig. 1; Fig. 2; Fig. 3 IO(AV) average output current δ = 0.5; Tmb ≤ 126 °C; square-wave pulse; both diodes conducting IFRM repetitive peak forward current δ = 0.5; tp = 25 µs; Tmb ≤ 126 °C; Square-ware pulse IFSM non-repetitive peak forward current tp = 10 ms; Tj(init) = 25 °C; sine-wave pulse; per diode; Fig. 4 tp = 8.3 ms; Tj(init) = 25 °C; sine-wave pulse; per diode; Fig. 4 Tstg storage temperature -65 175 °C Tj junction temperature - 175 °C aaa-015103 40 Ptot (W) δ=1 2.2 2.8 15 4.0 0.2 0.1 10 10 Fig. 1. 1.9 20 0.5 0 a = 1.57 Ptot (W) 30 20 aaa-015107 25 5 0 5 10 15 0 20 25 IF(AV) (A) 0 5 10 IF(AV) = IF(RMS) × √δ a = form factor = I F(RMS) / IF(AV) Vo = 1.135 V; Rs = 0.017 Ω Vo = 1.135 V; Rs = 0.017 Ω Forward power dissipation as a function of average forward current; square waveform; maximum values BYV415K-600P Product data sheet Fig. 2. 15 Forward power dissipation as a function of average forward current; sinusoidal waveform; maximum values All information provided in this document is subject to legal disclaimers. 24 December 2014 IF(AV) (A) © NXP Semiconductors N.V. 2014. All rights reserved 3 / 11 BYV415K-600P NXP Semiconductors Dual ultrafast power diode aaa-015108 20 IF(AV) (A) 126 °C aaa-015109 104 IFSM (A) 15 103 10 102 IF IFSM 5 0 -50 Fig. 3. 0 50 100 10 10-5 150 200 Tmb (°C) Forward current as a function of mounting base Fig. 4. temperature; maximum values BYV415K-600P Product data sheet t tp Tj(init) = 25 °C max 10-3 tp (s) 10-2 Non-repetitive peak forward current as a function of pulse width; sinusoidal waveform; maximum values All information provided in this document is subject to legal disclaimers. 24 December 2014 10-4 © NXP Semiconductors N.V. 2014. All rights reserved 4 / 11 BYV415K-600P NXP Semiconductors Dual ultrafast power diode 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base with heatsink compound; per diode; Fig. 5 - 1.2 2 K/W with heatsink compound; both diodes conducting - 0.65 1.2 K/W thermal resistance from junction to ambient in free air - 45 - K/W Rth(j-a) aaa-014272 10 Zth(j-mb) (K/W) 1 10-1 δ = 0.5 δ = 0.3 10-2 δ = 0.1 P δ= δ = 0.05 10-3 Fig. 5. T single pulse tp 10-4 10-6 tp 10-5 10-4 10-3 10-2 10-1 1 t T tp (s) 10 Transient thermal impedance from junction to mounting base as a function of pulse duration BYV415K-600P Product data sheet All information provided in this document is subject to legal disclaimers. 24 December 2014 © NXP Semiconductors N.V. 2014. All rights reserved 5 / 11 BYV415K-600P NXP Semiconductors Dual ultrafast power diode 10. Characteristics Table 7. Characteristics characteristics are per diode unless otherwise stated Symbol Parameter Conditions Min Typ Max Unit IF = 15 A; Tj = 25 °C; Fig. 6 - 1.4 2.1 V IF = 15 A; Tj = 150 °C; Fig. 6 - 1.1 1.4 V VR = 600 V; Tj = 25 °C - - 10 µA VR = 600 V; Tj = 150 °C - - 500 µA IF = 15 A; VR = 400 V; dIF/dt = 200 A/ - 125 - nC - 318 - nC - 25 50 ns - 45 - ns - 65 - ns - 34 - ns - 5.5 - A - 9.7 - A Static characteristics VF IR forward voltage reverse current Dynamic characteristics Qr recovered charge µs; Tj = 25 °C; Fig. 7 IF = 15 A; VR = 400 V; dIF/dt = 200 A/ µs; Tj = 125 °C; Fig. 7 trr reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 100 A/µs; Tj = 25 °C; Fig. 7 IF = 15 A; VR = 400 V; dIF/dt = 200 A/ µs; Tj = 25 °C; Fig. 7 IF = 15 A; VR = 400 V; dIF/dt = 200 A/ µs; Tj = 125 °C; Fig. 7 IF = 15 A; VR = 400 V; dIF/dt = 500 A/ µs; Tj = 25 °C; Fig. 7 IRM peak reverse recovery current IF = 15 A; VR = 400 V; dIF/dt = 200 A/ µs; Tj = 25 °C; Fig. 7 IF = 15 A; VR = 400 V; dIF/dt = 200 A/ µs; Tj = 125 °C; Fig. 7 BYV415K-600P Product data sheet All information provided in this document is subject to legal disclaimers. 24 December 2014 © NXP Semiconductors N.V. 2014. All rights reserved 6 / 11 BYV415K-600P NXP Semiconductors Dual ultrafast power diode aaa-015110 40 IF IF (A) dlF dt 30 trr (1) 20 (2) (3) time 25 % Qr 10 IR 0 100 % IRM 003aac562 0 1 2 VF (V) 3 Fig. 7. Reverse recovery definitions; ramp recovery Vo = 1.135 V; Rs = 0.017 Ω (1) Tj = 150 °C; typical values (2) Tj = 150 °C; maximum values (3) Tj = 25 °C; maximum values Fig. 6. Forward current as a function of forward voltage BYV415K-600P Product data sheet All information provided in this document is subject to legal disclaimers. 24 December 2014 © NXP Semiconductors N.V. 2014. All rights reserved 7 / 11 BYV415K-600P NXP Semiconductors Dual ultrafast power diode 11. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO3P SOT1259 D D1 A c1 D2 H Ø2 Ø1 E3 E E2 E1 L1 b2 b1 1 2 L2 3 b A1 e c 0 5 scale Dimensions (mm are the original dimensions) Unit max nom min mm 10 mm A A1 b b1 b2 5.0 1.6 1.2 3.2 2.2 0.75 1.65 15.8 13.8 c c1 D D1 9.8 D2 4.6 1.2 0.8 2.8 1.8 0.55 1.45 15.4 13.4 9.4 e E E1 E2 E3 H 20.1 14.1 18.9 17.06 5.2 5.45 (typ) 19.7 13.7 18.5 16.46 4.8 L1 L2 Ø1 Ø2 3.7 20.3 3.5 3.3 3.3 19.7 3.3 3.1 sot1259_po Outline version SOT1259 Fig. 8. References IEC JEDEC JEITA European projection Issue date 14-10-21 14-10-22 TO3P Package outline TO3P (SOT1259) BYV415K-600P Product data sheet All information provided in this document is subject to legal disclaimers. 24 December 2014 © NXP Semiconductors N.V. 2014. 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Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................3 9 Thermal characteristics .........................................5 10 Characteristics ....................................................... 6 11 Package outline ..................................................... 8 12 12.1 12.2 12.3 12.4 Legal information ...................................................9 Data sheet status ................................................. 9 Definitions .............................................................9 Disclaimers ...........................................................9 Trademarks ........................................................ 10 © NXP Semiconductors N.V. 2014. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 24 December 2014 BYV415K-600P Product data sheet All information provided in this document is subject to legal disclaimers. 24 December 2014 © NXP Semiconductors N.V. 2014. All rights reserved 11 / 11