PHILIPS BLF202 Hf/vhf power mos transistor Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D175
BLF202
HF/VHF power MOS transistor
Product specification
1999 Oct 20
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF202
FEATURES
PINNING - SOT409A
• High power gain
PIN
• Easy power control
1, 8
source
• Gold metallization
2, 3
gate
• Good thermal stability
4, 5
source
• Withstands full load mismatch.
6, 7
drain
DESCRIPTION
APPLICATIONS
• Communications transmitters in the HF/VHF range with
a nominal supply voltage of 12.5 V.
8
handbook, halfpage
5
DESCRIPTION
Silicon N-channel enhancement mode vertical D-MOS
transistor in an 8-lead SOT409A SMD package with a
ceramic cap.
1
Top view
4
MBK150
Fig.1 Simplified outline.
QUICK REFERENCE DATA
RF performance at Tmb = 25 °C in a common source test circuit.
MODE OF OPERATION
CW, class-B
f
(MHz)
VDS
(V)
PL
(W)
Gp
(dB)
ηD
(%)
175
12.5
2
>10
>50
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B.
1999 Oct 20
2
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF202
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage
−
40
V
VGS
gate-source voltage
−
20
V
ID
DC drain current
Ptot
total power dissipation
Tstg
Tj
−
1
A
−
5.7
W
storage temperature
−65
150
°C
junction temperature
−
200
°C
Tmb ≤ 85 °C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
thermal resistance from junction to
mounting base
Rth j-mb
Tmb ≤ 85 °C, Ptot = 5.7 W
MCD789
10
handbook, halfpage
ID
(A)
1
(1)
(2)
10−1
10−2
1
10
VDS (V)
102
(1) Current is this area may be limited by RDS(on).
(2) Tmb = 85 °C.
Fig.2 DC SOAR.
1999 Oct 20
3
VALUE
UNIT
20.5
K/W
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF202
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX. UNIT
V(BR)DSS
drain-source breakdown voltage
ID = 3 mA; VGS = 0
40
−
−
V
VGS(th)
gate-source threshold voltage
ID = 3 mA; VDS = 10 V
2
−
4.5
V
IDSS
drain-source leakage current
VGS = 0; VDS = 12.5 V
−
−
10
µA
IGSS
gate-source leakage current
VGS = ±20 V; VDS = 0
−
−
1
µA
IDSX
on-state drain current
VGS = 15 V; VDS = 10 V
−
1.3
−
A
RDSon
drain-source on-state resistance
ID = 0.3 A; VGS = 15 V
−
3.5
4
Ω
80
gfs
forward transconductance
ID = 0.3 A; VDS = 10 V
135
−
mS
Cis
input capacitance
VGS = 0; VDS = 12.5 V; f = 1 MHz −
5.3
−
pF
Cos
output capacitance
VGS = 0; VDS = 12.5 V; f = 1 MHz −
7.8
−
pF
Crs
feedback capacitance
VGS = 0; VDS = 12.5 V; f = 1 MHz −
1.8
−
pF
MGP111
15
handbook, halfpage
ID
(mA)
T.C.
(mV/K)
10
1200
5
800
0
400
−5
MGP112
1600
handbook, halfpage
1
10
102
ID (mA)
0
103
0
4
8
12
16
20
VGS (V)
VDS = 10 V.
VDS = 10 V; Tj = 25 °C.
Fig.3
Temperature coefficient of gate-source
voltage as a function of drain current; typical
values.
1999 Oct 20
Fig.4
4
Drain current as a function of gate-source
voltage; typical values.
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF202
MGP113
5
MGP114
30
handbook, halfpage
handbook, halfpage
RDSon
C
(pF)
(Ω)
4
20
3
Cos
2
10
Cis
1
0
0
40
80
120
Tj (°C)
0
160
0
4
8
12
VDS (V)
16
VGS = 15 V; ID = 0.3 A.
VGS = 0; f = 1 MHz.
Fig.5
Drain-source on-state resistance as a
function of junction temperature; typical
values.
Fig.6
MGP115
5
handbook, halfpage
Crs
(pF)
4
3
2
1
0
0
4
8
12
VDS (V)
16
VGS = 0; f = 1 MHz.
Fig.7
Feedback capacitance as a function of
drain-source voltage; typical values.
1999 Oct 20
5
Input and output capacitance as functions
of drain-source voltage; typical values.
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF202
APPLICATION INFORMATION FOR CLASS-B OPERATION
Tmb = 25 °C; RGS = 237 Ω; unless otherwise specified.
RF performance in CW operation in a common source class-B test circuit.
MODE OF OPERATION
CW, class-B
f
(MHz)
VDS
(V)
IDQ
(mA)
PL
(W)
Gp
(dB)
ηD
(%)
175
12.5
20
2
>10; typ. 13
>50; typ. 55
Ruggedness in class-B operation
The BLF202 is capable of withstanding a load mismatch corresponding to VSWR = 50:1 through all phases under the
following conditions: VDS = 15.5 V; f = 175 MHz at rated load power.
MGP116
20
handbook, halfpage
Gp
(dB)
MGP117
100
ηD
4
handbook, halfpage
PL
(W)
(%)
16
80
Gp
12
3
60
ηD
2
8
40
4
20
1
0
1
1.5
2
2.5
0
3.5
3
0
0
PL (W)
0.2
0.4
0.6
PIN (W)
0.8
Class-B operation; VDS = 12.5 V; IDQ = 20mA; f = 175 MHz.
Class-B operation; VDS = 12.5 V; IDQ = 20 mA; f = 175 MHz.
Fig.8
Fig.9
Power gain and efficiency as a functions of
load power; typical values.
1999 Oct 20
6
Load power as a function of input power;
typical values.
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF202
C10
handbook, full pagewidth
50 Ω
input
C1
C8
L3
D.U.T.
L4
L2
L1
C9
L5
C2
R1
C5
R6
C6
C3
L6
R2
+VD
C7
C4
R3
R5
R4
MGP118
f = 175 MHz.
Fig.10 Test circuit for class-B operation.
1999 Oct 20
7
C11
50 Ω
output
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF202
List of components (class-B test circuit)
COMPONENT
DESCRIPTION
VALUE
DIMENSIONS
CATALOGUE NO.
C1, C11
film dielectric trimmer
2 to 9 pF
2222 809 09005
C2, C9
film dielectric trimmer
2 to 9 pF
2222 809 09002
C3, C5
multilayer ceramic chip capacitor;
note 1
1 nF; 500 V
C4, C6
multilayer ceramic chip capacitor
2 × 100 nF
in parallel,
50 V
C7
Sprague electrolytic tantalum
capacitor
2.2 µF; 35 V
C8
multilayer ceramic chip capacitor;
note 1
5.1 pF; 500 V
C10
multilayer ceramic chip capacitor;
note 1
9.1 pF; 500 V
L1
8 turns enamelled 0.8 mm copper
wire
137 nH
length 5.1 mm;
int. dia. 4 mm;
leads 2 × 5 mm
L2, L3
stripline; note 2
81 Ω
8 mm × 2 mm
L4
3 turns enamelled 1 mm copper wire 57 nH
length 5 mm;
int. dia. 6 mm;
leads 2 × 5 mm
L5
9 turns enamelled 1 mm copper wire 355 nH
length 11 mm;
int. dia. 7 mm;
leads 2 × 5 mm
L6
grade 3B Ferroxcube RF choke
R1
0.4 W metal film resistor
237 Ω
2322 151 72371
R2
0.4 W metal film resistor
1 kΩ
2322 151 71002
R3
0.4 W metal film resistor
1 MΩ
2322 151 71005
R4
10 turns cermet potentiometer
5 kΩ
R5
0.4 W metal film resistor
7.5 kΩ
2322 151 77502
R6
1 W metal film resistor
10 Ω
2322 153 51009
2222 852 47104
4312 020 36642
Notes
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.
2. The striplines are on a double copper-clad printed-circuit board, with PTFE fibre-glass dielectric (εr = 2.2), thickness
1.6 mm.
1999 Oct 20
8
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF202
MGP119
250
MGP120
50
ZL
handbook, halfpage
handbook, halfpage
Zi
(Ω)
(Ω)
40
RL
125
30
ri
20
0
XL
10
xi
−125
0
50
100
150
f (MHz)
0
200
0
50
100
150
f (MHz)
200
Class B-operation; VDS = 12.5 V; IDQ = 20 mA;
RGS = 237 Ω; PL = 2 W.
Class B-operation; VDS = 12.5 V; IDQ = 20 mA;
RGS = 237 Ω; PL = 2 W.
Fig.11 Input impedance as a function of frequency
(series of components); typical values.
Fig.12 Load impedance as a function of frequency
(series components); typical values.
MGP121
20
handbook, halfpage
Gp
(dB)
15
10
handbook, halfpage
5
Zi
ZL
MBA379
0
0
50
100
150
f (MHz)
200
Class B-operation; VDS = 12.5 V; IDQ = 20 mA;
RGS = 237 Ω; PL = 2 W.
Fig.14 Power gain as a function of frequency;
typical values.
Fig.13 Definition of MOS impedance.
1999 Oct 20
9
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF202
MOUNTING RECOMMENDATIONS
Both the metallized groundplate and leads contribute to the heatflow. It is recommended that the transistor is mounted
on a grounded metallized area of 0.8 mm maximum thickness on the printed-circuit board, equipped with at least 12
(0.5 mm diameter) through metallized holes filled with solder.
A thermal resistance Rth(mb-h) of 5 K/W can be achieved if heatsink compound is applied when the transistor is mounted
on the printed-circuit board.
handbook, full pagewidth
1.87 (2×)
0.60 (4×)
0.80 (2×)
0.50 (12×)
7.38 3.60
1.00 (8×)
1.00 (9×)
4.60
Dimensions in mm.
Fig.15 Footprint SOT409A.
1999 Oct 20
10
MGK390
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF202
PACKAGE OUTLINE
Ceramic surface mounted package; 8 leads
SOT409A
D
A
D2
B
c
w2 B
H1
8
5
L
E2
H
E
A
1
4
e
α
w1
b
Q1
0
2.5
5 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
c
D
D2
E
E2
e
H
H1
L
Q1
w1
w2
α
mm
2.36
2.06
0.58
0.43
0.23
0.18
5.94
5.03
5.16
5.00
4.93
4.01
4.14
3.99
1.27
7.47
7.26
4.39
4.24
1.02
0.51
0.10
0.00
0.25
0.25
7°
0°
inches
0.093
0.081
0.023
0.017
0.009
0.007
0.234
0.198
0.203
0.197
0.194
0.158
0.163
0.157
0.050
0.294
0.286
0.173
0.167
0.040
0.020
0.004
0.000
0.010
0.010
7°
0°
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
98-01-27
SOT409A
1999 Oct 20
EUROPEAN
PROJECTION
11
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF202
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Short-form specification
The data in this specification is extracted from a full data sheet with the same type
number and title. For detailed information see the relevant data sheet or data handbook.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Oct 20
12
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF202
NOTES
1999 Oct 20
13
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF202
NOTES
1999 Oct 20
14
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF202
NOTES
1999 Oct 20
15
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SCA 68
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125002/01/pp16
Date of release: 1999
Oct 20
Document order number:
9397 750 06378