BCR10PM-12LG Triac Medium Power Use REJ03G1509-0200 Rev.2.00 Jun 28, 2007 Features • • • • • The Product guaranteed maximum junction temperature 150°C • Insulated Type • Planar Type • UL Recognized : Yellow Card No. E223904 File No.E80271 IT (RMS) : 10 A VDRM : 600 V IFGTI, IRGTI, IRGT III: 30 mA Viso : 2000 V Outline RENESAS Package code: PRSS0003AA-A (Package name: TO-220F ) 2 3 1 1. T1 Terminal 2. T2 Terminal 3. Gate Terminal 1 2 3 Applications Switching mode power supply, light dimmer, electronic switch, hair dryer, Television, Stereo system, refrigerator, Washing machine, infrared kotatsu, and carper, small motor controller, SS relay, solenoid driver, copying machine, electric tool, electric heater control, and other general purpose control applications Parameter Symbol Repetitive peak off-state voltageNote1 Non-repetitive peak off-state voltageNote1 REJ03G1509-0200 Page 1 of 7 Rev.2.00 Jun 28, 2007 VDRM VDSM Voltage class 12 600 720 Unit V V BCR10PM-12LG Parameter RMS on-state current Symbol IT (RMS) Ratings 10 Unit A Surge on-state current ITSM 100 A I2 t 41.6 A2s PGM PG (AV) VGM IGM Tj Tstg — Viso 5 0.5 10 2 –40 to +150 –40 to +150 2.0 2000 W W V A °C °C g V I2t for fusion Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction Temperature Storage temperature Mass Isolation voltage Conditions Commercial frequency, sine full wave 360°conduction, Tc = 103°C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Ta = 25°C, AC 1 minute, T1 • T2 • G terminal to case Notes: 1. Gate open. Electrical Characteristics Parameter Repetitive peak off-state current On-state voltage Symbol IDRM Min. — Typ. — Max. 2.0 Unit mA Test conditions Tj = 150°C, VDRM applied VTM — — 1.5 V Tc = 25°C, ITM = 15 A, instantaneous measurement Gate trigger voltageNote2 Ι ΙΙ ΙΙΙ VFGTΙ VRGTΙ VRGTΙΙΙ — — — — — — 1.5 1.5 1.5 V V V Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω Gate trigger curentNote2 Ι ΙΙ ΙΙΙ IFGTΙ IRGTΙ IRGTΙΙΙ — — — — — — 30 30 30 mA mA mA Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω VGD Rth (j-c) 0.2/0.1 — — — — 4.1 V °C/W Tj = 125°C/150°C, VD = 1/2 VDRM Junction to caseNote3 (dv/dt)c 10/1 — — V/µs Tj = 125°C/150°C Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state Note4 commutation voltage Notes: 2. Measurement using the gate trigger characteristics measurement circuit. 3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W. 4. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below. Test conditions 1. Junction temperature Tj = 125°C/150°C 2. Rate of decay of on-state commutating current (di/dt)c = –5.0 A/ms 3. Peak off-state voltage VD = 400 V REJ03G1509-0200 Page 2 of 7 Rev.2.00 Jun 28, 2007 Commutating voltage and current waveforms (inductive load) Supply Voltage Time Main Current (di/dt)c Time Main Voltage (dv/dt)c Time VD BCR10PM-12LG Performance Curves 100 7 5 90 3 2 Surge On-State Current (A) 102 Tj = 150°C 101 7 5 3 2 Tj = 25°C 100 7 5 0.5 1.0 1.5 2.0 2.5 3.0 3.5 70 60 50 40 30 20 10 2 3 4 5 7 101 2 3 4 5 7 102 On-State Voltage (V) Conduction Time (Cycles at 60Hz) Gate Characteristics (I, II and III) Gate Trigger Current vs. Junction Temperature 101 7 5 3 V = 1.5V 2 GT 100 7 5 3 2 IRGT I PGM = 5W PG(AV) = 0.5W IGM = 2A IFGT I, IRGT III 10–1 7 VGD = 0.1V 5 1 2 10 2 3 5 7 10 2 3 5 7 103 2 3 5 7 104 103 Typical Example 7 5 3 IRGT I, IRGT III 2 102 IFGT I 7 5 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 160 Gate Current (mA) Junction Temperature (°C) Gate Trigger Voltage vs. Junction Temperature Maximum Transient Thermal Impedance Characteristics (Junction to case) 103 7 5 4 3 2 Typical Example 102 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 160 Junction Temperature (°C) REJ03G1509-0200 Page 3 of 7 Gate Trigger Current (Tj = t°C) × 100 (%) Gate Trigger Current (Tj = 25°C) Gate Voltage (V) 80 0 100 4.0 5 3 2 VGM = 10V Gate Trigger Voltage (Tj = t°C) × 100 (%) Gate Trigger Voltage (Tj = 25°C) Rated Surge On-State Current Rev.2.00 Jun 28, 2007 Transient Thermal Impedance (°C/W) On-State Current (A) Maximum On-State Characteristics 102 4.5 103 104 100 101 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 10–1 102 Conduction Time (Cycles at 60Hz) BCR10PM-12LG 7 5 3 2 No Fins 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 10–1 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105 6 4 2 0 0 2 4 6 8 10 12 14 16 Allowable Ambient Temperature vs. RMS On-State Current 160 Curves apply regardless of conduction angle Ambient Temperature (°C) Case Temperature (°C) 8 Allowable Case Temperature vs. RMS On-State Current 120 100 80 60 40 360° Conduction Resistive, inductive loads 20 0 2 4 6 8 10 12 14 16 140 120 All fins are black painted aluminum and greased 120 120 t2.3 100 100 100 t2.3 80 60 60 t2.3 60 Curves apply regardless of 40 conduction angle Resistive, 20 inductive loads Natural convection 0 0 2 6 4 8 10 12 14 16 RMS On-State Current (A) RMS On-State Current (A) Allowable Ambient Temperature vs. RMS On-State Current Repetitive Peak Off-State Current vs. Junction Temperature 160 Natural convection No Fins Curves apply regardless of conduction angle Resistive, inductive loads 140 120 100 80 60 40 20 0 12 360° Conduction Resistive, 10 inductive loads RMS On-State Current (A) 140 0 14 Conduction Time (Cycles at 60Hz) 160 Ambient Temperature (°C) 16 On-State Power Dissipation (W) 103 Maximum On-State Power Dissipation 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 RMS On-State Current (A) REJ03G1509-0200 Page 4 of 7 Rev.2.00 Jun 28, 2007 Repetitive Peak Off-State Current (Tj = t°C) × 100 (%) Repetitive Peak Off-State Current (Tj = 25°C) Transient Thermal Impedance (°C/W) Maximum Transient Thermal Impedance Characteristics (Junction to ambient) 106 7 Typical Example 5 3 2 105 7 5 3 2 104 7 5 3 2 103 7 5 3 2 102 –60 –40 –20 0 20 40 60 80 100 120 140 160 Junction Temperature (°C) BCR10PM-12LG 103 7 5 4 3 2 Latching Current vs. Junction Temperature Latching Current (mA) Typical Example 102 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 160 103 7 5 3 2 Distribution 102 T2+, G– Typical Example 7 5 3 2 101 7 5 3 2 T2+, G+ Typical Example T2–, G– 100 –40 0 40 80 120 160 Junction Temperature (°C) Breakover Voltage vs. Junction Temperature Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj=125°C) 160 Typical Example 140 120 100 80 60 40 20 0 –60 –40 –20 0 20 40 60 80 100 120 140 160 Breakover Voltage (dv/dt = xV/µs) × 100 (%) Breakover Voltage (dv/dt = 1V/µs) Junction Temperature (°C) 160 Typical Example Tj = 125°C 140 120 100 80 60 III Quadrant 40 20 I Quadrant 0 1 2 10 2 3 5 7 10 2 3 5 7 103 2 3 5 7 104 Junction Temperature (°C) Rate of Rise of Off-State Voltage (V/µs) Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj=150°C) Commutation Characteristics (Tj=125°C) 160 Typical Example Tj = 150°C 140 120 100 80 60 40 III Quadrant 20 I Quadrant 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 Rate of Rise of Off-State Voltage (V/µs) REJ03G1509-0200 Page 5 of 7 Rev.2.00 Jun 28, 2007 Critical Rate of Rise of Off-State Commutating Voltage (V/µs) Breakover Voltage (dv/dt = xV/µs) × 100 (%) Breakover Voltage (dv/dt = 1V/µs) Breakover Voltage (Tj = t°C) × 100 (%) Breakover Voltage (Tj = 25°C) Holding Current (Tj = t°C) × 100 (%) Holding Current (Tj = 25°C) Holding Current vs. Junction Temperature 7 5 Typical Example Tj = 125°C 3 IT = 4A 2 τ = 500µs VD = 200V f = 3Hz 101 7 Minimum 5 Characteristics 3 2 Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT τ Time Value I Quadrant III Quadrant 100 7 0 10 2 3 5 7 101 2 3 5 7 102 Rate of Decay of On-State Commutating Current (A/ms) BCR10PM-12LG Gate Trigger Current vs. Gate Current Pulse Width 7 5 3 2 Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT τ Time 101 7 5 Gate Trigger Current (tw) × 100 (%) Gate Trigger Current (DC) Critical Rate of Rise of Off-State Commutating Voltage (V/µs) Commutation Characteristics (Tj=150°C) Typical Example Tj = 150°C IT = 4A τ = 500µs VD = 200V f = 3Hz I Quadrant III Quadrant 3 2 Minimum Characteristics Value 100 7 100 5 7 101 2 3 2 3 5 7 102 103 7 5 4 3 2 Typical Example IFGT I IRGT I IRGT III 102 7 5 4 3 2 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 Rate of Decay of On-State Commutating Current (A/ms) Gate Current Pulse Width (µs) Gate Trigger Characteristics Test Circuits Recommended Circuit Values Around The Triac 6Ω 6Ω Load C1 A 6V V Test Procedure I V A V 330Ω Test Procedure III REJ03G1509-0200 Page 6 of 7 330Ω Test Procedure II 6Ω 6V R1 A 6V 330Ω Rev.2.00 Jun 28, 2007 C0 R0 C1 = 0.1 to 0.47µF C0 = 0.1µF R0 = 100Ω R1 = 47 to 100Ω BCR10PM-12LG Package Dimensions Package Name TO-220F JEITA Package Code SC-67 Previous Code RENESAS Code PRSS0003AA-A MASS[Typ.] 2.0g Unit: mm 10.5Max 2.8 17 8.5 5.0 1.2 5.2 φ3.2 ± 0.2 13.5Min 3.6 1.3Max 0.8 2.54 0.5 2.6 4.5 2.54 Order Code Lead form Straight type Lead form Standard packing Vinyl sack Plastic Magazine (Tube) Quantity 100 50 Standard order code Type name Type name – Lead forming code Note : Please confirm the specification about the shipping in detail. REJ03G1509-0200 Page 7 of 7 Rev.2.00 Jun 28, 2007 Standard order code example BCR10PM-12LG BCR10PM-12LG-A8 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property rights or any other rights of Renesas or any third party with respect to the information in this document. 2. Renesas shall have no liability for damages or infringement of any intellectual property or other rights arising out of the use of any information in this document, including, but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples. 3. 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