BPW36/BPW37 HERMETIC SILICON PHOTOTRANSISTOR PACKAGE DIMENSIONS FEATURES • Hermetically sealed package • Narrow reception angle • European “Pro Electron” registered 0.209 (5.31) 0.184 (4.67) DESCRIPTION 0.030 (0.76) NOM 0.255 (6.48) • The BPW36/37 are silicon phototransistors mounted in narrow angle TO-18 packages. 0.50 (12.7) MIN SCHEMATIC C 0.020 (0.51) 3X Base B 0.100 (2.54) 0.050 (1.27) Emitter Collector (Case) E 0.040 (1.02) Ø0.100 (2.54) 0.040 (1.02) 45° NOTES: 1. Dimensions for all drawings are in inches (mm). 2. Tolerance of ± .010 (.25) on all non-nominal dimensions unless otherwise specified. ABSOLUTE MAXIMUM RATINGS 1. Derate power dissipation linearly 3.00 mW/°C above 25°C ambient. 2. Derate power dissipation linearly 6.00 mW/°C above 25°C case. 3. RMA flux is recommended. 4. Methanol or isopropyl alcohols are recommended as cleaning agents. 5. Soldering iron tip 1/16” (1.6mm) minimum from housing. 6. As long as leads are not under any stress or spring tension. 7. Light source is a GaAs LED emitting light at a peak wavelength of 940 nm. (TA = 25°C unless otherwise specified) Parameter Operating Temperature Storage Temperature Soldering Temperature (Iron)(3,4,5 and 6) Soldering Temperature (Flow)(3,4 and 6) Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Power Dissipation (TA = 25°C)(1) Power Dissipation (TC = 25°C)(2) Symbol TOPR TSTG TSOL-I TSOL-F VCEO VCBO VEBO PD PD 2001 Fairchild Semiconductor Corporation DS300279 3/13/01 1 OF 4 Rating -65 to +125 -65 to +150 240 for 5 sec 260 for 10 sec 45 45 5 300 600 Unit °C °C °C °C V V V mW mW www.fairchildsemi.com BPW36/BPW37 HERMETIC SILICON PHOTOTRANSISTOR ELECTRICAL / OPTICAL CHARACTERISTICS (TA =25°C) (All measurements made under pulse conditions) PARAMETER TEST CONDITIONS SYMBOL MIN TYP MAX UNITS Collector-Emitter Breakdown IC = 10 mA, Ee = 0 BVCEO 45 — — V Emitter-Base Breakdown IE = 100 µA, Ee = 0 BVEBO 5.0 — — V Collector-Base Breakdown IC = 100 µA, Ee = 0 BVCBO 45 — — V Collector-Emitter Leakage VCE = 10 V, Ee = 0 ICEO — — 100 nA 0 — ±10 — Deg. IC(ON) 1.0 — — mA IC(ON) 0.5 — — mA ton — 8 — µs toff — 7 — µs VCE(SAT) — — 0.40 V Reception Angle at 1/2 Sensitivity Ee = 0.5 mW/cm2 On-State Collector Current BPW36 VCE = 5 V(7) Ee = 0.5 mW/cm2 On-State Collector Current BPW37 VCE = 5 V(7) IC = 2 mA, VCC = 10 V Turn-On Time RL = 100 1 IC = 2 mA, VCC = 10 V Turn-Off Time RL = 100 1 IC = 1.0 mA, Ee = 3.0 mW/cm2 Saturation Voltage TYPICAL PERFORMANCE CURVES 10 IL - NORMALIZED LIGHT CURRENT IL - NORMALIZED LIGHT CURRENT 10 Ee = 20 mW/cm2 10 mW/cm2 1.0 5 mW/cm2 2 mW/cm2 0.1 1 mW/cm2 Normalized to: VCE = 5 V Ee = 10 mW/cm2 .01 1.0 0.1 Normalized to: VCE = 5 V Ee = 10 mW/cm2 .01 .01 0.1 1.0 10 100 0.1 1.0 10 100 VCE - COLLECTOR TO EMITTER VOLTAGE H - TOTAL IRRADIANCE IN mW/cm2 Fig. 1 Light Current vs. Collector to Emitter Voltage Fig. 2 Normalized Light Current vs. Radiation www.fairchildsemi.com 2 OF 4 3/13/01 DS300279 BPW36/BPW37 HERMETIC SILICON PHOTOTRANSISTOR TYPICAL PERFORMANCE CURVES 10 SWITCHING TIME (µs) IL - NORMALIZED LIGHT CURRENT 10 1.0 RL = 1 k1 1.0 Normalized to: VCE = 10 V IL = 2 mA tON = tOFF = 5 µs RL = 100 1 Normalized to: VCE = 5 V Ee = 10 mW/cm2 TA = 25˚C 0.1 0 50 100 150 0.1 1.0 TA - TEMPERATURE (˚C) 10 100 IL - OUTPUT CURRENT (mA) Fig. 3 Normalized Light Current vs. Temperature Fig. 4 Switching Times vs. Output Current 106 1.4 IL - NORMALIZED LIGHT CURRENT IL - NORMALIZED DARK CURRENT RL = 10 1 0.1 -50 105 104 103 102 10.0 Normalized to: ID @ 25˚C VCEO = 10 V 1.0 0.1 1.2 CQX14 BPW36 OR BPW37 1.0 0.8 0.6 0.4 Normalized to: CQX14 Input = 10 mA VCEO = 10 V IL = 100 µA TA = 25˚C 0.2 0 0 25 50 75 100 125 55 150 TA - TEMPERATURE (˚C) 3/13/01 35 15 5 25 45 65 85 105 TA - TEMPERATURE (˚C) Fig. 5 Dark Current vs. Temperature DS300279 RL = 100 1 Fig. 6 Normalized Light Current vs. Temperature Both Emitter (CQX14) and Detector (BPW36 or BPW37) at Same Temperature 3 OF 4 www.fairchildsemi.com BPW36/BPW37 HERMETIC SILICON PHOTOTRANSISTOR DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body,or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in labeling, can be reasonably expected to result in a significant injury of the user. www.fairchildsemi.com 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. 4 OF 4 3/13/01 DS300279