MAKO Semiconductor CO., LTD SOT-23 Plastic-Encapsulate DLRGHV BZX84C2V4-BZX84C43 ZENER DIODE SOT-23 FEATURES z Planar Die Construction z 300mW Power Dissipation Zener Voltages from 2.4V - 43V z z Ultra-Small Surface Mount Package Power Dissipation M O AK Maximum Ratings(Ta=25℃ unless otherwise specified) Characteristic Thermal Resistance from Junction to Ambient Storage Temperature Range Unit VF Pd 0.9 300 V mW 417 Tj 150 ℃ /W ℃ Tstg -55~+150 ℃ RθJA ico m Junction Temperature Value @ IF = 10mA Se Forward Voltage (Note 2) Power Dissipation(Note 1) Symbol r to uc nd MAKOSemiconductor 1 Du ELECTRICAL CHARACTERISTICS Ta=25℃ unless otherwise specified Maximum Zener ZenerVoltage Range (Note 2) Type Number Impedance VZ@IZT IZT ZZT@IZT ZZK@IZK Reverse Coefficent of Zener voltage @ IZT=5mA IZK IR mV/°C VR Min(V) Max(V) (mA) (mA) (μA) (V) Min Max Z11 2.4 2.20 2.60 5 100 600 1.0 50 1.0 -3.5 0 BZX84C2V7 Z12 2.7 2.5 2.9 5 100 600 1.0 20 1.0 -3.5 0 BZX84C3V0 Z13 3.0 2.8 3.2 5 95 600 1.0 10 1.0 -3.5 0 BZX84C3V3 Z14 3.3 3.1 3.5 5 95 600 1.0 5 1.0 -3.5 0 BZX84C3V6 Z15 3.6 3.4 3.8 5 90 600 1.0 5 1.0 -3.5 0 BZX84C3V9 Z16 3.9 3.7 4.1 5 90 600 1.0 3 1.0 -3.5 0 BZX84C4V3 Z17 4.3 4.0 4.6 5 90 600 1.0 3 1.0 -3.5 0 BZX84C4V7 Z1 4.7 4.4 5.0 5 80 500 1.0 3 2.0 -3.5 0.2 Z2 5.1 4.8 5.4 5 60 480 1.0 2 2.0 -2.7 1.2 5.6 5.2 6.0 5 40 400 1.0 1 2.0 -2.0 2.5 6.2 5.8 6.6 5 10 150 1.0 3 4.0 0.4 3.7 6.8 6.4 7.2 5 15 80 1.0 2 4.0 1.2 4.5 7.5 7.0 7.9 5 15 80 1.0 1 5.0 2.5 5.3 8.2 7.7 8.7 5 15 80 1.0 0.7 5.0 3.2 6.2 M Nom(V) BZX84C2V4 O AK BZX84C5V1 BZX84C6V2 Z4 BZX84C6V8 Z5 BZX84C7V5 Z6 BZX84C8V2 Z7 BZX84C9V1 Z8 9.1 8.5 BZX84C10 Z9 10 9.4 9.6 5 15 100 1.0 0.5 6.0 3.8 7.0 10.6 5 20 150 1.0 0.2 7.0 4.5 8.0 m Z3 Se BZX84C5V6 (Ω) Temperature Current (Note 3) Code Maximum Y1 11 10.4 11.6 Y2 12 11.4 12.7 5 20 150 1.0 0.1 8.0 5.4 9.0 5 25 150 1.0 0.1 8.0 6.0 10.0 BZX84C13 Y3 13 12.4 14.1 BZX84C15 Y4 15 13.8 BZX84C16 Y5 16 15.3 BZX84C18 Y6 18 BZX84C20 Y7 20 BZX84C22 Y8 BZX84C24 Y9 BZX84C27 Y10 27 25.1 BZX84C30 Y11 30 28.0 BZX84C33 Y12 33 31.0 35.0 2 BZX84C36 Y13 36 34.0 38.0 2 90 350 BZX84C39 Y14 39 37.0 41.0 2 130 350 BZX84C43 Y15 43 40.0 46.0 2 100 700 30 170 1.0 0.1 8.0 15.6 5 30 200 1.0 0.1 10.5 9.2 13.0 17.1 5 40 200 1.0 0.1 11.2 10.4 14.0 16.8 19.1 5 18.8 21.2 5 55 225 1.0 0.1 14.0 14.4 18.0 22 20.8 23.3 5 55 250 1.0 24 22.8 25.6 5 70 28.9 2 80 32.0 2 ico 5 uc BZX84C11 BZX84C12 225 nd 45 80 0.1 12.6 12.4 11.0 16.0 0.1 15.4 16.4 20.0 250 1.0 0.1 16.8 18.4 22.0 300 0.5 0.1 18.9 21.4 25.3 300 325 0.5 0.1 21.0 r to 80 1.0 7.0 0.5 0.1 23.1 24.4 27.4 29.4 33.4 0.5 0.1 25.2 30.4 37.4 0.5 0.1 27.3 33.4 41.2 1 0.1 32 10 12 Notes: 1. Valid provided that device terminals are kept at ambient temperature. 2. Tested with pulses, period=5ms,pulse width =300μs. 3. f = 1kHZ. MAKOSemiconductor 2 Du0 ELECTRICAL CHARACTERISTICS Zener Characteristics(VZ Up to 10 V) Zener Characteristics(11 V to 43 V) 100 100 Pulsed PD =300mW IZ, ZENER CURRENT (mA) 1 1 2 3 4 5 6 7 8 9 10 0.5 10 11 15 20 VZ, ZENER VOLTAGE (V) 25 43 39 36 33 30 30 35 40 M Pulsed FOR BZX84CXXX SERIES 10 O AK IR, LEAKAGE CURRENT (uA) 30 25 20 VZ @ IZT 15 10 Se 5 0 4 8 12 16 20 24 28 32 VZ, NOMINAL ZENER VOLTAGE (V) 36 40 0.1 0.01 Ta=100℃ Ta=25℃ 1E-4 0 44 5 10 15 20 25 30 35 40 45 VZ, NOMINAL ZENER VOLTAGE (V) ico Typical Capacitance 1000 1 1E-3 m -5 0 50 Typical Leakage Current 100 TYPICAL Ta VALUES 35 45 VZ, ZENER VOLTAGE (V) Temperature Coefficients 40 θVZ, TEMPERATURE COEFFICIENT (mV/℃) 27 1 0.5 Effect of Zener Voltage on Zener Impedance 1000 Ta=25℃ f=1MHz ZZT, DYNAMIC IMPEDANCE(Ω) 1 100 IZ=5mA 10 r to BIAS AT 50% OF VZ NOM 1 10 100 1 VZ, NOMINAL ZENER VOLTAGE (V) f=1kHz uc 1V BIAS 1 IZ(AC)=0.1IZ(DC) nd 100 10 Ta=25℃ IZ=1mA 0V BIAS C, CAPACITANCE (pF) 24 18 20 22 10 11 12 13 10 9.1 8.2 7.5 6.2 6.8 5.1 4.7 5.6 10 2.4 IZ, ZENER CURRENT (mA) Ta =25℃ PD =300mW Pulsed 15 16 Ta =25℃ 10 100 VZ, NOMINAL ZENER VOLTAGE (V) Power Derating Curve 350 250 POWER DISSIPATION PD (mW) 300 200 150 100 50 0 0 25 50 75 AMBIENT TEMPERATURE MAKO Semiconductor 100 Ta 125 150 (℃ ) 3 D,Aug,2014 Symbol M O AK Dimensions In Inches Min Max 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP 0.071 0.079 0.022 REF 0.012 0.020 0° 6° m Se A A1 A2 b c D E E1 e e1 L L1 Dimensions In Millimeters Min Max 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP 1.800 2.000 0.550 REF 0.300 0.500 0° 8° r to uc nd ico MAKOSemiconductor 4 Du M O AK m Se r to uc nd ico MAKOSemiconductor 5 Du