Inchange Semiconductor Product Specification BUH315 Silicon NPN Power Transistors DESCRIPTION ·With TO-3PML package ·High voltage ·High speed switching APPLICATIONS ·Horizontal deflection for color TV ·Switch mode power supplies. PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 700 V VEBO Emitter-base voltage Open collector 10 V IC Collector current (DC) 6 A ICM Collector current-peak 12 A IB Base current (DC) 3 A IBM Base current-peak tp<5ms 5 A Ptot Total power dissipation TC=25℃ 44 W 150 ℃ -65~150 ℃ Tj Tstg Operating junction temperature Storage temperature tp<5ms Inchange Semiconductor Product Specification BUH315 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0 700 V V(BR)EBO Emitter-base breakdown voltage IE=10mA; IC=0 10 V VCEsat Collector-emitter saturation voltage IC=3A ;IB=0.75A 1.5 V VBEsat Base-emitter saturation voltage IC=3A ;IB=0.75A 1.3 V ICES Collector cut-off current VCE=1500V; VBE=0 0.2 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA hFE DC current gain IC=3A ; VCE=5V Tj=100℃ 6 3.5 MAX UNIT 12 Switching times resistive load ts Storage time 2.4 μs 0.2 μs IC=3A;IB1=0.75A;IB2=1.5A VCC=400V tf Fall time THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case 2 MAX UNIT 2.8 ℃/W Inchange Semiconductor Product Specification BUH315 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3