AD ADG704 Cmos low voltage 4 ohm, 4-channel multiplexer Datasheet

a
CMOS
Low Voltage 4 ⍀, 4-Channel Multiplexer
ADG704
FEATURES
+1.8 V to +5.5 V Single Supply
2.5 ⍀ (Typ) On Resistance
Low On-Resistance Flatness
–3 dB Bandwidth >200 MHz
Rail-to-Rail Operation
10-Lead ␮SOIC Package
Fast Switching Times
tON 20 ns
tOFF 13 ns
Typical Power Consumption (<0.01 ␮W)
TTL/CMOS Compatible
FUNCTIONAL BLOCK DIAGRAM
ADG704
S1
S2
D
S3
S4
1 OF 4
DECODER
APPLICATIONS
Battery Powered Systems
Communication Systems
Sample-and-Hold Systems
Audio Signal Routing
Data Acquisition System
Video Switching
A0
A1
EN
GENERAL DESCRIPTION
PRODUCT HIGHLIGHTS
The ADG704 is a CMOS analog multiplexer, comprising four
single channels. This multiplexer is designed on an advanced
submicron process that provides low power dissipation yet gives
high switching speed, low on resistance, low leakage currents
and high bandwidths.
1. +1.8 V to +5.5 V Single Supply Operation.
The ADG704 offers high performance and is fully specified
and guaranteed with +3 V and +5 V supply rails.
The on resistance profile is very flat over the full analog signal
range. This ensures excellent linearity and low distortion when
switching audio signals. Fast switching speed also makes the
part suitable for video signal switching.
The ADG704 can operate from a single supply range of +1.8 V
to +5.5 V, making it ideal for use in battery powered instruments and with the new generation of DACs and ADCs from
Analog Devices.
The ADG704 switches one of four inputs to a common output,
D, as determined by the 3-bit binary address lines, A0, A1 and
EN. A Logic “0” on the EN pin disables the device.
2. Very Low RON (4.5 Ω Max at 5 V, 8 Ω Max at 3 V).
At supply voltage of +1.8 V, RON is typically 35 Ω over the
temperature range.
3. Low On-Resistance Flatness.
4. –3 dB Bandwidth Greater than 200 MHz.
5. Low Power Dissipation.
CMOS construction ensures low power dissipation.
6. Fast tON/tOFF.
7. Break-Before-Make Switching Action.
8. 10-Lead µSOIC Package.
Each switch of the ADG704 conducts equally well in both
directions when ON. The ADG704 exhibits break-before-make
switching action.
The ADG704 is available in 10-lead µSOIC package.
REV. A
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700
World Wide Web Site: http://www.analog.com
Fax: 781/326-8703
© Analog Devices, Inc., 1999
= +5 V ⴞ 10%, GND = 0 V. All Specifications –40ⴗC to +85ⴗC, unless
ADG704–SPECIFICATIONS1 (Votherwise
noted.)
DD
Parameter
ANALOG SWITCH
Analog Signal Range
On-Resistance (RON)
B Version
–40ⴗC to
+25ⴗC
+85ⴗC
0 V to VDD
2.5
4
On-Resistance Match Between
Channels (∆RON)
On-Resistance Flatness (RFLAT(ON))
4.5
0.1
0.4
0.75
Drain OFF Leakage ID (OFF)
Channel ON Leakage ID, IS (ON)
± 0.01
± 0.1
± 0.01
± 0.1
± 0.01
± 0.1
DIGITAL INPUTS
Input High Voltage, VINH
Input Low Voltage, VINL
Input Current
IINL or IINH
0.005
DYNAMIC CHARACTERISTICS2
tON
14
Test Conditions/Comments
V
Ω typ
Ω max
VS = 0 V to VDD, IDS = –10 mA;
Test Circuit 1
Ω typ
Ω max
Ω typ
Ω max
1.2
LEAKAGE CURRENTS
Source OFF Leakage IS (OFF)
Units
VS = 0 V to VDD, IDS = –10 mA
VDD = +5.5 V
VS = 4.5 V/1 V, VD = 1 V/4.5 V;
Test Circuit 2
VS = 4.5 V/1 V, VD = 1 V/4.5 V;
Test Circuit 2
VS = VD = 4.5 V or 1 V;
Test Circuit 3
± 0.3
nA typ
nA max
nA typ
nA max
nA typ
nA max
2.4
0.8
V min
V max
± 0.1
µA typ
µA max
VIN = VINL or VINH
RL = 300 Ω, CL = 35 pF
VS = 3 V, Test Circuit 4
RL = 300 Ω, CL = 35 pF
VS = 3 V, Test Circuit 4
RL = 300 Ω, CL = 35 pF
VS1 = VS2 = 3 V, Test Circuit 5
VS = 2 V, RS = 0 Ω, CL = 1 nF;
Test Circuit 6
RL = 50 Ω, CL = 5 pF, f = 10 MHz
RL = 50 Ω, CL = 5 pF, f = 1 MHz;
Test Circuit 7
RL = 50 Ω, CL = 5 pF, f = 10 MHz
RL = 50 Ω, CL = 5 pF, f = 1 MHz;
Test Circuit 8
RL = 50 Ω, CL = 5 pF; Test Circuit 9
± 0.3
± 0.3
tOFF
6
Break-Before-Make Time Delay, tD
8
Charge Injection
3
ns typ
ns max
ns typ
ns max
ns typ
ns min
pC typ
Off Isolation
–60
–80
dB typ
dB typ
Channel-to-Channel Crosstalk
–62
–82
dB typ
dB typ
Bandwidth –3 dB
CS (OFF)
CD (OFF)
CD, CS (ON)
200
9
37
54
MHz typ
pF typ
pF typ
pF typ
20
13
1
POWER REQUIREMENTS
IDD
VS = 0 V to VDD, IDS = –10 mA
µA typ
µA max
0.001
1.0
VDD = +5.5 V
Digital Inputs = 0 V or 5 V
NOTES
1
Temperature ranges are as follows: B Version: –40°C to +85°C.
2
Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
–2–
REV. A
ADG704
SPECIFICATIONS1 (V
DD
= +3 V ⴞ 10%, GND = 0 V. All Specifications –40ⴗC to +85ⴗC, unless otherwise noted.)
Parameter
B Version
–40ⴗC to
+25ⴗC
+85ⴗC
ANALOG SWITCH
Analog Signal Range
On-Resistance (RON)
4.5
On-Resistance Match Between
Channels (∆RON)
Drain OFF Leakage ID (OFF)
Channel ON Leakage ID, IS (ON)
Test Conditions/Comments
0 V to VDD
5
8
V
Ω typ
Ω max
VS = 0 V to VDD, IDS = –10 mA;
Test Circuit 1
0.4
2.5
Ω typ
Ω max
Ω typ
0.1
On-Resistance Flatness (RFLAT(ON))
LEAKAGE CURRENTS
Source OFF Leakage IS (OFF)
Units
± 0.01
± 0.1
± 0.01
± 0.1
± 0.01
± 0.1
DIGITAL INPUTS
Input High Voltage, VINH
Input Low Voltage, VINL
Input Current
IINL or IINH
0.005
DYNAMIC CHARACTERISTICS2
tON
16
VDD = +3.3 V
VS = 3 V/1 V, VD = 1 V/3 V;
Test Circuit 2
VS = 3 V/1 V, VD = 1 V/3 V;
Test Circuit 2
VS = VD = 3 V or 1 V;
Test Circuit 3
± 0.3
2.0
0.4
V min
V max
± 0.1
µA typ
µA max
VIN = VINL or VINH
RL = 300 Ω, CL = 35 pF
VS = 2 V, Test Circuit 4
RL = 300 Ω, CL = 35 pF
VS = 2 V, Test Circuit 4
RL = 300 Ω, CL = 35 pF
VS1 = VS2 = 2 V, Test Circuit 5
VS = 1.5 V, RS = 0 Ω, CL = 1 nF;
Test Circuit 6
RL = 50 Ω, CL = 5 pF, f = 10 MHz
RL = 50 Ω, CL = 5 pF, f = 1 MHz;
Test Circuit 7
RL = 50 Ω, CL = 5 pF, f = 10 MHz
RL = 50 Ω, CL = 5 pF, f = 1 MHz;
Test Circuit 8
RL = 50 Ω, CL = 5 pF; Test Circuit 9
± 0.3
± 0.3
tOFF
8
Break-Before-Make Time Delay, tD
9
Charge Injection
3
ns typ
ns max
ns typ
ns max
ns typ
ns min
pC typ
Off Isolation
–60
–80
dB typ
dB typ
Channel-to-Channel Crosstalk
–62
–82
dB typ
dB typ
Bandwidth –3 dB
CS (OFF)
CD (OFF)
CD, CS (ON)
200
9
37
54
MHz typ
pF typ
pF typ
pF typ
16
1
POWER REQUIREMENTS
µA typ
µA max
0.001
1.0
NOTES
1
Temperature ranges are as follows: B Version: –40°C to +85°C.
2
Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
REV. A
VS = 0 V to VDD, IDS = –10 mA
nA typ
nA max
nA typ
nA max
nA typ
nA max
24
IDD
VS = 0 V to VDD, IDS = –10 mA
–3–
VDD = +3.3 V
Digital Inputs = 0 V or 3 V
ADG704
ABSOLUTE MAXIMUM RATINGS 1
TERMINOLOGY
(TA = +25°C unless otherwise noted)
VDD to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +6 V
Analog, Digital Inputs2 . . . . . . . . . . . –0.3 V to VDD +0.3 V or
30 mA, Whichever Occurs First
Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . . 30 mA
Peak Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA
(Pulsed at 1 ms, 10% Duty Cycle Max)
Operating Temperature Range
Industrial (B Version) . . . . . . . . . . . . . . . . . –40°C to +85°C
Storage Temperature Range . . . . . . . . . . . . . –65°C to +150°C
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
µSOIC Package, Power Dissipation . . . . . . . . . . . . . . . 315 mW
θJA Thermal Impedance . . . . . . . . . . . . . . . . . . . . . 206°C/W
Lead Temperature, Soldering
Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . . . +215°C
Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . . +220°C
ESD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 kV
NOTES
1
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability. Only one absolute
maximum rating may be applied at any one time.
2
Overvoltages at IN, S or D will be clamped by internal diodes. Current should be
limited to the maximum ratings given.
VDD
GND
S
D
A0, A1
EN
RON
∆RON
RFLAT(ON)
ID (OFF)
IS (OFF)
ID, IS (ON)
VD (VS)
CS (OFF)
CD (OFF)
CD, CS (ON)
tON
tOFF
ORDERING GUIDE
tD
Model
Temperature
Range
Brand1
Package
Option2
ADG704BRM
–40°C to +85°C
S9B
RM-10
Crosstalk
NOTES
1
Brand = Due to small package size, these three characters represent the part
number.
2
RM = µSOIC.
Off Isolation
Charge
Injection
PIN CONFIGURATION
(10-Lead ␮SOIC)
A0 1
S1 2
ADG704
10
A1
9
S2
Bandwidth
On Response
On Loss
GND 3
TOP VIEW 8 D
(Not to Scale)
7 S4
S3 4
EN 5
6
Most positive power supply potential.
Ground (0 V) reference.
Source terminal. May be an input or output.
Drain terminal. May be an input or output.
Logic control inputs.
Logic control input.
Ohmic resistance between D and S.
On resistance match between any two channels i.e., RONmax–RONmin.
Flatness is defined as the difference between
the maximum and minimum value of on resistance as measured over the specified analog
signal range.
Drain leakage current with the switch “OFF.”
Source leakage current with the switch “OFF.”
Channel leakage current with the switch “ON.”
Analog voltage on terminals D, S.
“OFF” switch source capacitance.
“OFF” switch drain capacitance.
“ON” switch capacitance.
Delay between applying the digital control
input and the output switching on. See Test
Circuit 4.
Delay between applying the digital control
input and the output switching off.
“OFF” time or “ON” time measured between
the 90% points of both switches, when switching
from one address state to another. See Test
Circuit 5.
A measure of unwanted signal that is coupled
through from one channel to another as a
result of parasitic capacitance.
A measure of unwanted signal coupling
through an “OFF” switch.
A measure of the glitch impulse transferred
from the digital input to the analog output
during switching.
The frequency at which the output is attenuated by –3 dBs.
The frequency response of the “ON” switch.
The voltage drop across the “ON” switch,
seen on the On Response vs. Frequency plot
as how many dBs the signal is away from 0 dB
at very low frequencies.
VDD
Table I. Truth Table
A1
A0
EN
ON Switch
X
0
0
1
1
X
0
1
0
1
0
1
1
1
1
NONE
1
2
3
4
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the ADG704 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
–4–
WARNING!
ESD SENSITIVE DEVICE
REV. A
Typical Performance Characteristics–ADG704
6.0
10m
TA = +258C
5.5
VDD = +5V
1m
5.0
4.5
A0 TOGGLED
VDD = +2.7V
100m
ISUPPLY – A
RON – V
4.0
3.5
VDD = +3.0V
3.0
VDD = +4.5V
2.5
10m
EN TOGGLED
1m
2.0
100n
VDD = +5.0V
1.5
1.0
10n
0.5
0
0
0.5
1.0
1.5
2.0 2.5
3.0 3.5
4.0
4.5
VD OR VS – DRAIN OR SOURCE VOLTAGE – Volts
1n
100
5.0
10k
100k
FREQUENCY – Hz
1M
10M
Figure 4. Supply Current vs. Input Switching Frequency
Figure 1. On Resistance as a Function of VD (VS) Single
Supplies
–30
6.0
VDD = +5V, +3V
VDD = +3.0V
5.5
–40
5.0
–50
4.5
OFF ISOLATION – dB
+858C
4.0
RON – V
1k
+258C
3.5
3.0
–408C
2.5
2.0
–60
–70
–80
–90
–100
1.5
–110
1.0
–120
0.5
–130
10k
0
0
0.5
1.0
1.5
2.0
2.5
VD OR VS – DRAIN OR SOURCE VOLTAGE – Volts
3.0
Figure 2. On Resistance as a Function of VD (VS) for
Different Temperatures; VDD = 3 V
100M
–30
VDD = +5V, +3V
VDD = +5.0V
5.5
–40
5.0
–50
CROSSTALK – dB
4.5
4.0
RON – V
1M
10M
FREQUENCY – Hz
Figure 5. Off Isolation vs. Frequency
6.0
3.5
3.0
2.5
+858C
2.0
+258C
–70
–80
–90
–110
–408C
1.0
–60
–100
1.5
–120
0.5
–130
10k
0
0
0.5
1.0
1.5
2.0 2.5
3.0 3.5
4.0
4.5
VD OR VS – DRAIN OR SOURCE VOLTAGE – Volts
5.0
100k
1M
10M
FREQUENCY – Hz
Figure 6. Crosstalk vs. Frequency
Figure 3. On Resistance as a Function of VD (VS) for
Different Temperatures; VDD = 5 V
REV. A
100k
–5–
100M
ADG704
0
25
TA = +258C
VDD = +5V
VDD = +5V
20
VDD = +3V
10
QINJ – pC
ON RESPONSE – dB
15
–2
5
0
–4
–5
–10
–6
10k
100k
1M
10M
FREQUENCY – Hz
–15
0.0
100M
0.5
1.0
1.5
2.0
2.5
3.0
3.5
SOURCE VOLTAGE – Volts
4.0
4.5
5.0
Figure 8. Charge Injection vs. Source Voltage
Figure 7. On Response vs. Frequency
APPLICATIONS
VDD
V+
CH1
.
.
.
S1
75V
.
.
.
D
A=2
S4
CH4
75V
250V
75V
VOUT
RL
75V
ADG704
250V
A0 A1 EN
Figure 9. 4-Channel Video Multiplexing
–6–
REV. A
ADG704
Test Circuits
IDS
V1
S
VS
IS (OFF)
D
A
RON = V1/IDS
ID (OFF)
S
D
VS
Test Circuit 1. On Resistance
0.1mF
ID (ON)
S
A
VD
VS
Test Circuit 2. Off Leakage
Test Circuit 3. On Leakage
VDD
VIN
D
50%
50%
VOUT
RL
300V
VS
IN
CL
35pF
90%
90%
VOUT
tOFF
tON
GND
Test Circuit 4. Switching Times
0.1mF
VDD
VDD
VIN
S1
VS1
..
.
..
.
50%
VOUT
S4
VS4
50%
0V
D
RL
300V
CL
35pF
VOUT
50%
50%
0V
tD
VIN
tD
GND
Test Circuit 5. Break-Before-Make Time Delay, tD
VDD
SW ON
VDD
RS
S
VOUT
CL
1nF
DECODER
VOUT
DVOUT
QINJ = CL 3 DVOUT
GND
EN
A0 A1
Test Circuit 6. Charge Injection
REV. A
SW OFF
VIN
D
VS
–7–
A
VD
VDD
S
D
ADG704
VDD
0.1mF
VDD
S1
..
.
S4
..
..
.
D
S1
VOUT
VOUT
D
S2
RL
50V
VIN
RL
50V
IN
VS
GND
GND
CHANNEL-TO-CHANNEL
CROSSTALK = 20 3 LOG |VS/VOUT|
Test Circuit 8. Channel-to-Channel Crosstalk
Test Circuit 7. Off Isolation
0.1mF
VDD
VDD
D
S
VOUT
RL
50V
IN
VS
GND
Test Circuit 9. Bandwidth
OUTLINE DIMENSIONS
Dimensions shown in inches and (mm).
10-Lead ␮SOIC
(RM-10)
0.122 (3.10)
0.114 (2.90)
10
6
0.199 (5.05)
0.187 (4.75)
0.122 (3.10)
0.114 (2.90)
1
5
PIN 1
0.0197 (0.50) BSC
0.037 (0.94)
0.031 (0.78)
0.120 (3.05)
0.112 (2.85)
PRINTED IN U.S.A.
VS
VDD
C3383a–0–6/99
0.1mF
0.120 (3.05)
0.112 (2.85)
0.043 (1.10)
MAX
68
0.006 (0.15) 0.012 (0.30) SEATING
08
PLANE 0.009 (0.23)
0.002 (0.05) 0.006 (0.15)
0.005 (0.13)
–8–
0.028 (0.70)
0.016 (0.40)
REV. A