ON ECH8102 Bipolar transistor Datasheet

Ordering number : ENA1420A
ECH8102
Bipolar Transistor
http://onsemi.com
–30V, –12A, Low VCE(sat), PNP Single ECH8
Applications
•
High-power IGBT / MOSFET gate drivers, DC / DC converters, lamp drivers, motor drivers
Features
•
•
•
•
• High current capacitance
Adoption of FBET, MBIT process
• High speed switching
Low collector-to-emitter saturation voltage
• Halogen free compliance
High allowable power dissipation
IECO is guaranteed for preventing reverse flow from the collector to the emitter
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Conditions
Ratings
Unit
VCBO
VCES
-30
V
-30
V
VCEO
VEBO
-30
V
-6
V
IC
ICP
-12
A
-24
A
Collector Dissipation
IB
PC
Junction Temperature
Tj
Storage Temperature
Tstg
When mounted on ceramic substrate (900mm2×0.8mm)
-1.2
A
1.6
W
150
°C
-55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
Product & Package Information
unit : mm (typ)
7011A-005
• Package
: ECH8
• JEITA, JEDEC
:• Minimum Packing Quantity : 3,000 pcs./reel
Top View
ECH8102-TL-H
0.25
2.9
0.15
8
Packing Type : TL
5
Marking
GB
2.3
2.8
0 to 0.02
Lot No.
4
1
0.65
0.3
Electrical Connection
1 : Emitter
2 : Emitter
3 : Emitter
4 : Base
5 : Collector
6 : Collector
7 : Collector
8 : Collector
0.07
0.9
0.25
TL
Bottom View
8
7
6
5
1
2
3
4
ECH8
Semiconductor Components Industries, LLC, 2013
September, 2013
53012 TKIM/D0209EA TKIM TC-00002127 No. A1420-1/7
ECH8102
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Collector Cutoff Current
ICBO
IEBO
IECO
Emitter Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-On Time
Storage Time
Fall Time
Conditions
Ratings
min
typ
Unit
max
VCB= -30V, IE=0A
VEB= -4V, IC=0A
-0.1
μA
-0.1
μA
-1
μA
hFE1
VEC= -4.5V, IC=0A
VCE= -2V, IC= -500mA
200
hFE2
VCE= -2V, IC= -4A
150
hFE3
VCE= -2V, IC= -10A
100
fT
Cob
VCE= -10V, IC= -500mA
140
120
VCE(sat)1
VCB= -10V, f=1MHz
IC= -6A, IB= -300mA
VCE(sat)2
IC= -2A, IB= -40mA
VBE(sat)
V(BR)CBO
IC= -2A, IB= -40mA
IC= -10μA, IE=0A
-30
V
V(BR)CES
IC= -100μA, RBE=0Ω
-30
V
V(BR)CEO
IC= -1mA, RBE=∞
-30
V
V(BR)EBO
ton
IE= -10μA, IC=0A
-6
tstg
tf
See specified Test Circuit.
560
-80
MHz
pF
-135
mV
-50
-85
mV
-0.85
-1.2
V
V
91
ns
125
ns
17
ns
Switching Time Test Circuit
IB1
PW=20μs
D.C.≤1%
INPUT
VOUT
IB2
VR
50Ω
RB
RL
+
+
100μF
470μF
VBE=5V
VCC= --12V
IC= --50IB1=25IB2= --5A
Ordering Information
Device
ECH8102-TL-H
Package
Shipping
memo
ECH8
3,000pcs./reel
Pb Free and Halogen Free
No. A1420-2/7
ECH8102
IC -- VCE
--5
--6
0m
--25mA
--20mA
--15mA
A
--70m
--4
--10mA
--3
--2
--10
--5mA
--8
--6
--4
--25°C
--6
--30mA
VCE= --2V
Ta=75°
C
25°C
--7
--40mA
--35mA
--45mA
Collector Current, IC -- A
--8
IC -- VBE
--12
--100mA --90mA
Collector Current, IC -- A
--9
--50mA
A
--80mA
--10
--0.6
--0.8
--2
--1
0
IB=0mA
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
--1.4
--1.6
Collector-to-Emitter Voltage, VCE -- V
hFE -- IC
1000
DC Current Gain, hFE
--25°C
100
7
5
2
--25°C
100
7
5
3
2
5 7 --0.1
2
3
5 7 --1.0
2
3
Collector Current, IC -- A
f T -- IC
5
VCE= --2V
25°C
2
2 3
10
--0.01
5 7 --10 2 3
IT14434
2 3
5 7 --0.1
2
3
5 7 --1.0
2
3
Collector Current, IC -- A
Cob -- VCB
7
5 7 --10 2 3
IT14435
f=1MHz
5
Output Capacitance, Cob -- pF
3
2
100
7
5
3
2
3
2
100
7
10
--0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
Collector Current, IC -- A
2
3
7 --10
IT14436
IC / IB=10
--100
°C
25
3
C
5°
2
=7
Ta
C
5°
--2
--10
3
2
5°C
Ta= --2
75°C
25°C
--1.0
--0.01
2
5 7 --0.1
2
3
5 7 --1.0
2
3
Collector Current, IC -- A
5 7 --10 2 3
IT14438
5
7
2
--10
VCE(sat) -- IC
3
5
IT14437
IC / IB=20
2
--100
7
°C
25
5
3
°C
75
C
5°
--2
=
Ta
2
--10
7
5
3
3
3
3
2
7
5
2
Collector-to-Base Voltage, VCB -- V
VCE(sat) -- IC
3
7
5
5
--1.0
5
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
Gain-Bandwidth Product, f T -- MHz
VCE= --10V
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
--1.2
IT14433
Ta=75°C
3
3
10
--0.01
--1.0
hFE -- IC
5
25°C
2
--0.4
7
Ta=75°C
3
--0.2
Base-to-Emitter Voltage, VBE -- V
VCE= --0.5V
5
0
IT14456
1000
7
DC Current Gain, hFE
0
--1.8 --2.0
5°C
Ta= --2
75°C
25°C
2
--0.01
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
Collector Current, IC -- A
5 7 --10 2 3
IT14439
No. A1420-3/7
ECH8102
VCE(sat) -- IC
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
--100
7
°C
75
C
=
5°
Ta
--2
5
3
2
Ta= --25°C
75°C
--10
25°C
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
Collector Current, IC -- A
DC
3
2
op
era
tio
n(
--1.0
7
5
Ta
=
25
°C
)
3
2
--0.1
7
5
3
2
Ta=25°C
Single pulse
When mounted on ceramic substrate (900mm2×0.8mm)
--0.01
--0.01 2 3
5 7--0.1
2 3
5 7--1.0
2 3
5 7 --10
Collector-to-Emitter Voltage, VCE -- V
2 3
75°C
5
25°C
3
2 3
5 7 --0.1
2 3
5 7 --1.0
2 3
5 7 --10
2 3
IT14441
PC -- Ta
When mounted on ceramic substrate
(900mm2×0.8mm)
1.6
s
1m
Collector Current, IC -- A
50
0
10 μs
10 ms
0m
s
IC= --12A
Ta= --25°C
7
1.8
≤10μs
s
0μ
--10
7
5
--1.0
Collector Current, IC -- A
10
3
2
ASO
ICP= --24A
2
2
--0.01
5 7 --10 2 3
IT14440
Collector Dissipation, PC -- W
5
--0.01
5
IC / IB=50
IC / IB=50
2
7
VBE(sat) -- IC
3
25
°C
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
3
1.4
1.2
1.0
0.8
0.6
0.4
0.2
5
IT14442
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT14443
No. A1420-4/7
ECH8102
Embossed Taping Specification
ECH8102-TL-H
No. A1420-5/7
ECH8102
Outline Drawing
ECH8102-TL-H
Land Pattern Example
Mass (g) Unit
0.02
mm
* For reference
Unit: mm
2.8
0.6
0.4
0.65
No. A1420-6/7
ECH8102
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PS No. A1420-7/7
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