NXP BC857AW Pnp general purpose transistor Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D102
BC856W; BC857W; BC858W
PNP general purpose transistors
Product data sheet
Supersedes data of 1999 Apr 12
2002 Feb 04
NXP Semiconductors
Product data sheet
BC856W; BC857W;
BC858W
PNP general purpose transistors
FEATURES
PINNING
• Low current (max. 100 mA)
PIN
• Low voltage (max. 65 V).
APPLICATIONS
DESCRIPTION
1
base
2
emitter
3
collector
• General purpose switching and amplification.
DESCRIPTION
PNP transistor in a SOT323 plastic package.
NPN complements: BC846W, BC847W and BC848W.
3
handbook, halfpage
3
MARKING
TYPE NUMBER
1
MARKING
CODE(1)
2
BC856W
3D*
BC856AW
3A*
1
BC856BW
3B*
Top view
BC857W
3H*
BC857AW
3E*
BC857BW
3F*
BC857CW
3G*
BC858W
3M*
Fig.1
Note
1. * = -: made in Hong Kong.
* = t: made in Malaysia.
2002 Feb 04
2
2
MAM048
Simplified outline (SOT323; SC70) and
symbol.
NXP Semiconductors
Product data sheet
PNP general purpose transistors
BC856W; BC857W; BC858W
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
SYMBOL
VCBO
VCEO
PARAMETER
collector-base voltage
CONDITIONS
MIN.
MAX.
UNIT
open emitter
BC856W
−
−80
V
BC857W
−
−50
V
BC858W
−
−30
V
BC856W
−
−65
V
BC857W
−
−45
V
BC858W
−
−30
V
−
−5
V
collector-emitter voltage
open base
VEBO
emitter-base voltage
open collector
IC
collector current (DC)
−
−100
mA
ICM
peak collector current
−
−200
mA
IBM
peak base current
−
−200
mA
Ptot
total power dissipation
−
200
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
Tamb ≤ 25 °C; note 1
Note
1. Refer to SOT323 standard mounting conditions.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
thermal resistance from junction to
ambient
CONDITIONS
in free air; note 1
Note
1. Refer to SOT323 standard mounting conditions.
2002 Feb 04
3
VALUE
UNIT
625
K/W
NXP Semiconductors
Product data sheet
PNP general purpose transistors
BC856W; BC857W; BC858W
CHARACTERISTICS
Tamb = 25 °C; unless otherwise specified.
SYMBOL
ICBO
PARAMETER
CONDITIONS
UNIT
−
−1
−15
nA
−
−
−4
μA
−
−
−100
nA
BC856W
125
−
475
BC857W; BC858W
125
−
800
BC856AW; BC857AW
125
−
250
BC856BW; BC857BW
220
−
475
BC857CW
420
−
800
IC = −10 mA; IB = −0.5 mA −
−75
−300
mV
IC = −100 mA; IB = −5 mA; −
note 1
−250
−600
mV
IC = −10 mA; IB = −0.5 mA −
−700
−
mV
IC = −100 mA; IB = −5 mA; −
note 1
−850
−
mV
IC = −2 mA; VCE = −5 V
−600
−650
−750
mV
IC = −10 mA; VCE = −5 V
−
−
−820
mV
VEB = −5 V; IC = 0
hFE
DC current gain
IC = −2 mA; VCE = −5 V
VBE
MAX.
VCB = −30 V; IE = 0;
Tj = 150 °C
emitter-base cut-off current
VBEsat
TYP.
VCB = −30 V; IE = 0
collector-base cut-off current
IEBO
VCEsat
MIN.
collector-emitter saturation voltage
base-emitter saturation voltage
base-emitter voltage
Cc
collector capacitance
VCB = −10 V; IE = Ie = 0;
f = 1 MHz
−
−
3
pF
Ce
emitter capacitance
VEB = −0.5 V; IC = Ic = 0;
f = 1 MHz
−
−
12
pF
fT
transition frequency
VCE = −5 V; IC = −10 mA;
f = 100 MHz
100
−
−
MHz
F
noise figure
IC = −200 μA; VCE = −5 V;
RS = 2 kΩ; f = 1 kHz;
B = 200 Hz
−
−
10
dB
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
2002 Feb 04
4
NXP Semiconductors
Product data sheet
PNP general purpose transistors
BC856W; BC857W; BC858W
MGT711
500
MGT712
−1200
VBE
(mV)
−1000
handbook, halfpage
handbook, halfpage
hFE
400
(1)
(1)
−800
300
(2)
−600
(2)
200
(3)
−400
(3)
100
−200
0
−10−2
−10−1
−1
−10
0
−10−2
−102
−103
I C (mA)
−10−1
BC857AW; VCE = −5 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
BC857AW; VCE = −5 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.2
Fig.3
DC current gain as a function of collector
current; typical values.
MGT713
−104
handbook, halfpage
VCEsat
(mV)
−1200
VBEsat
(mV)
−1000
−103
−800
−102
−103
I C (mA)
MGT714
handbook, halfpage
−102
(1)
(2)
(3)
−400
(1)
−200
(3) (2)
−1
−10
0
−10−1
−102
−103
I C (mA)
−1
BC857AW; IC/IB = 20.
(1) Tamb = 150 °C.
BC857AW; IC/IB = 20.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
(2) Tamb = 25 °C.
Fig.4
Fig.5
−10
−102
−103
I C (mA)
(3) Tamb = 150 °C.
Collector-emitter saturation voltage as a
function of collector current; typical values.
2002 Feb 04
−10
Base-emitter voltage as a function of
collector current; typical values.
−600
−10
−10−1
−1
5
Base-emitter saturation voltage as a
function of collector current; typical values.
NXP Semiconductors
Product data sheet
PNP general purpose transistors
BC856W; BC857W; BC858W
MGT715
1000
MGT716
−1200
VBE
(mV)
−1000
handbook, halfpage
handbook, halfpage
hFE
800
(1)
−800
600
(2)
(1)
−600
400
200
0
−10−2
−10−1
(2)
−400
(3)
−200
−1
−10
(3)
0
−10−2
−102
−103
I C (mA)
−10−1
−1
BC857BW; VCE = −5 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
BC857BW; VCE = −5 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.6
Fig.7
DC current gain as a function of collector
current; typical values.
MGT717
−104
handbook, halfpage
VCEsat
(mV)
−1200
VBEsat
(mV)
−1000
−103
−800
−10
−102
−103
I C (mA)
Base-emitter voltage as a function of
collector current; typical values.
MGT718
handbook, halfpage
(1)
(2)
−600
(3)
−400
−102
(1)
−200
(3) (2)
−10
−10−1
−1
−10
0
−10−1
−102
−103
I C (mA)
−1
BC857BW; IC/IB = 20.
(1) Tamb = 150 °C.
BC857BW; IC/IB = 20.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
(2) Tamb = 25 °C.
Fig.8
Fig.9
−102
−103
I C (mA)
(3) Tamb = 150 °C.
Collector-emitter saturation voltage as a
function of collector current; typical values.
2002 Feb 04
−10
6
Base-emitter saturation voltage as a
function of collector current; typical values.
NXP Semiconductors
Product data sheet
PNP general purpose transistors
BC856W; BC857W; BC858W
MGT719
1000
MGT720
−1200
VBE
(mV)
−1000
handbook, halfpage
handbook, halfpage
hFE
(1)
800
(1)
−800
600
(2)
(2)
−600
400
−400
(3)
(3)
200
0
−10−2
−200
−10−1
−1
−10
0
−10−1
−102
−103
I C (mA)
−1
−10
−102
−103
I C (mA)
BC857CW; VCE = −5 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
BC857CW; VCE = −5 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.10 DC current gain as a function of collector
current; typical values.
Fig.11 Base-emitter voltage as a function of
collector current; typical values.
MGT721
−104
handbook, halfpage
VCEsat
(mV)
−1200
VBEsat
(mV)
−1000
−103
−800
MGT722
handbook, halfpage
(1)
(2)
−600
(3)
−400
−102
(1)
−200
(3) (2)
−10
−10−1
−1
−10
0
−10−1
−102
−103
I C (mA)
−1
−10
−102
−103
I C (mA)
BC857CW; IC/IB = 20.
(1) Tamb = 150 °C.
BC857CW; IC/IB = 20.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
(2) Tamb = 25 °C.
Fig.12 Collector-emitter saturation voltage as a
function of collector current; typical values.
Fig.13 Base-emitter saturation voltage as a
function of collector current; typical values.
2002 Feb 04
(3) Tamb = 150 °C.
7
NXP Semiconductors
Product data sheet
PNP general purpose transistors
BC856W; BC857W; BC858W
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT323
D
E
B
A
X
HE
y
v M A
3
Q
A
A1
c
1
2
e1
bp
Lp
w M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.8
0.1
0.4
0.3
0.25
0.10
2.2
1.8
1.35
1.15
1.3
0.65
2.2
2.0
0.45
0.15
0.23
0.13
0.2
0.2
OUTLINE
VERSION
SOT323
2002 Feb 04
REFERENCES
IEC
JEDEC
EIAJ
SC-70
8
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
NXP Semiconductors
Product data sheet
PNP general purpose transistors
BC856W; BC857W; BC858W
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
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Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
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Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
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Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2002 Feb 04
9
NXP Semiconductors
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Printed in The Netherlands
613514/04/pp10
Date of release: 2002 Feb 04
Document order number: 9397 750 09168