BCP51 -1A , -45V PNP Plastic Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-223 FEATURES For AF driver and output stages High collector current Low collector-emitter saturation voltage A M 4 CB Top View CLASSIFICATION OF hFE Product-Rank BCP51-16 Range 100~250 1 2 K L 3 E D F G H J PACKAGE INFORMATION Package MPQ Leader Size SOT-223 2.5K 13 inch Collector 2 4 Millimeter Min. Max. 5.90 6.70 6.70 7.30 3.30 3.80 1.42 1.90 4.45 4.75 0.60 0.85 REF. A B C D E F 1 Base REF. G H J K L M Millimeter Min. Max. 0.18 2.00 REF. 0.20 0.40 1.10 REF. 2.30 REF. 2.80 3.20 3 Emitter ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Unit Collector-Base Voltage VCBO -45 V Collector-Emitter Voltage VCEO -45 V Emitter-Base Voltage VEBO -5 V Collector Current-Continuous IC -1 A Collector Power Dissipation PD 1.5 W Thermal Resistance from Junction to Ambient RθJA 94 °C / W Storage Temperature Range TSTG -65~150 °C ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min. Max. Unit Collector-Base Breakdown Voltage V(BR)CBO -45 - V IC= -0.1mA, IE=0 Collector-Emitter Breakdown Voltage V(BR)CEO -45 - V IC= -10mA, IB=0 Emitter-Base Breakdown Voltage V(BR)EBO -5 - V IC= -10µA, IE=0 ICBO - -100 nA VCB= -30V, IE=0 25 - 100 250 VCE= -2V, IC= -150mA 25 - VCE= -2V, IC= -500mA VCE(sat) - -0.5 V IC= -500mA, IB= -50mA Base-Emitter Voltage VBE - -1 V VCE= -2V, IC= -500mA Transition Frequency fT 100 - MHz Collector Cut-Off Current DC Current Gain Collector-Emitter Saturation Voltage http://www.SeCoSGmbH.com/ 25-Jan-2017 Rev. C hFE Test Condition VCE= -2V, IC= -5mA VCE= -10V, IC= -50mA, f=100MHz Any changes of specification will not be informed individually. Page 1 of 2 BCP51 Elektronische Bauelemente -1A , -45V PNP Plastic Encapsulate Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 25-Jan-2017 Rev. C Any changes of specification will not be informed individually. Page 2 of 2