Complementary MOSFET ELM34600AA-N ■General Description ■Features ELM34600AA-N uses advanced trench technology to provide excellent Rds(on) and low gate charge. • • • • N-channel P-channel Vds=30V Id=7A Rds(on) < 27.5mΩ(Vgs=10V) Rds(on) < 40.0mΩ(Vgs=4.5V) Vds=-30V Id=-5A Rds(on) < 45mΩ(Vgs=-10V) Rds(on) < 80mΩ(Vgs=-4.5V) ■Maximum Absolute Ratings Parameter Drain-source voltage Gate-source voltage Ta=25°C Continuous drain current Ta=70°C Pulsed drain current Symbol N-ch (Max.) P-ch (Max.) Vds 30 -30 V Vgs ±20 7 ±20 -5 V 6 20 -4 -20 2.0 1.3 -55 to 150 2.0 1.3 -55 to 150 Id Idm Ta=25°C Ta=70°C Junction and storage temperature range Power dissipation Pd Tj,Tstg Unit Note A A 3 W °C ■Thermal Characteristics Parameter Maximum junction-to-ambient Symbol Rθja Device N-ch Maximum junction-to-ambient Rθja P-ch ■Pin configuration SOP-8(TOP VIEW) 1 8 2 7 3 6 4 5 Typ. Max. 62.5 Unit °C/W 62.5 °C/W Note ■Circuit Pin No. 1 2 Pin name SOURCE1 GATE1 3 4 5 SOURCE2 GATE2 DRAIN2 6 7 8 DRAIN2 DRAIN1 DRAIN1 7-1 • N-ch • P-ch D1 G1 D2 G2 S1 S2 Complementary MOSFET ELM34600AA-N ■Electrical Characteristics (N-ch) Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol Conditions BVdss Id=250μA, Vgs=0V Zero gate voltage drain current Idss Vds=24V, Vgs=0V Vds=20V, Vgs=0V, Tj=55°C Gate-body leakage current Gate threshold voltage On state drain current Igss Vds=0V, Vgs=±20V Vgs(th) Vds=Vgs, Id=250μA Id(on) Vgs=10V, Vds=5V Static drain-source on-resistance Rds(on) Min. Typ. Ta=25°C Max. Unit Note 30 1.0 20 V 1.5 1 10 μA ±100 nA 2.5 V A 1 mΩ 1 S 1 1 V 1 1.3 2.6 A A 3 Vgs=10V, Id=7A 20.5 27.5 30.0 16 40.0 Forward transconductance Gfs Vgs=4.5V, Id=6A Vds=5V, Id=7A Diode forward voltage Vsd If=1A, Vgs=0V Max.body-diode continuous current Pulsed current Is Ism DYNAMIC PARAMETERS Input capacitance Output capacitance Ciss Coss Vgs=0V, Vds=15V, f=1MHz 680 105 pF pF Crss 75 pF Qg 14.0 nC 2 2 2 2 Reverse transfer capacitance SWITCHING PARAMETERS Total gate charge Gate-source charge Gate-drain charge Turn-on delay time Qgs Vgs=10V, Vds=15V, Id=7A Qgd td(on) 1.9 3.3 4.6 7.0 nC nC ns Turn-on rise time Turn-off delay time tr Vgs=10V, Vds=10V, Id≈1A td(off) Rgen=3Ω 4.0 20.0 6.0 30.0 ns ns 2 2 5.0 8.0 ns 2 Turn-off fall time tf NOTE : 1. Pulse test : Pulsed width≤300μsec and Duty cycle≤2%. 2. Independent of operating temperature. 3. Pulsed width limited by maximum junction temperature. 4. Duty cycle ≤ 1%. 7- 2 NIKO-SEM P5003QVG N- & P-Channel Enhancement Mode Field Effect Transistor Complementary MOSFET SOP-8 Lead-Free ELM34600AA-N ■Typical Electrical and Thermal Characteristics (N-ch) N-CHANNEL Body Diode Forward Voltage Variation with Source Current and Temperature 100 V GS = 0V T A = 125°C Is - Reverse Drain Current(A) 10 7- 3 -55°C 0.1 0.01 0.001 4 25°C 1 0 0.4 0.2 0.6 0.8 1.0 VSD - Body Diode Forward Voltage(V) 1.2 1.4 DEC-19-2005 NIKO-SEM MOSFET N-Complementary & P-Channel Enhancement Mode ELM34600AA-N Field Effect Transistor P5003QVG SOP-8 Lead-Free 7- 4 5 DEC-19-2005 Complementary MOSFET ELM34600AA-N ■Electrical Characteristics (P-ch) Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol Conditions Min. BVdss Id=-250μA, Vgs=0V -30 Zero gate voltage drain current Idss Vds=-24V, Vgs=0V Vds=-20V, Vgs=0V, Tj=55°C Gate-body leakage current Igss Vds=0V, Vgs=±20V Gate threshold voltage On state drain current Vgs(th) Vds=Vgs, Id=-250μA Id(on) Vgs=-10V, Vds=-5V Static drain-source on-resistance Rds(on) -1.0 -20 Typ. Ta=25°C Max. Unit Note V -1.5 -1 -10 μA ±100 nA -2.5 V A 1 mΩ 1 S 1 -1 V 1 -1.3 -2.6 A A 3 Vgs=-10V, Id=-5A 37.5 45.0 62.0 13 80.0 Forward transconductance Gfs Vgs=-4.5V, Id=-4A Vds=-5V, Id=-5A Diode forward voltage Vsd If=-1A, Vgs=0V Max.body-diode continuous current Pulsed current Is Ism DYNAMIC PARAMETERS Input capacitance Output capacitance Ciss Coss Vgs=0V, Vds=-15V, f=1MHz 780 145 pF pF Crss 79 pF 15.1 nC 2 2.1 4.0 7.7 11.5 nC nC ns 2 2 2 5.7 20.0 8.5 30.0 ns ns 2 2 9.5 14.0 ns 2 Reverse transfer capacitance SWITCHING PARAMETERS Total gate charge Qg Vgs=-10V, Vds=-15V Id=-5A Gate-source charge Gate-drain charge Turn-on delay time Qgs Qgd td(on) Turn-on rise time Turn-off delay time tr Vgs=-10V, Vds=-10V td(off) Id≈-1A, Rgen=3Ω Turn-off fall time tf NOTE : 1. Pulse test : Pulsed width≤300μsec and Duty cycle≤2%. 2. Independent of operating temperature. 3. Pulsed width limited by maximum junction temperature. 7- 5 NIKO-SEM P5003QVG Complementary MOSFET N- & P-Channel Enhancement Mode Field Effect Transistor ELM34600AA-N SOP-8 Lead-Free ■Typical Electrical and Thermal Characteristics (P-ch) P-CHANNEL -Is - Reverse Drain Current(A) Body Diode Forward Voltage Variation with Source Current and Temperature 100 V GS = 0V 10 1 0.1 25°C -55°C 0.01 0.001 0 7 - 66 T A = 125°C 0.2 0.6 0.8 1.0 1.2 0.4 -VSD - Body Diode Forward Voltage(V) 1.4 DEC-19-2005 10 Gate Charge Characteristics ID = -5A VDS = -5V -15V 6 4 f=1 MHz VGS=0V 1000 Ciss 800 600 400 Coss 200 2 0 0 5 10 Qg -Gate Charge(nC) 15 SOP-8 Lead-Free Capacitance Characteristics 1200 -10V 8 0 P5003QVG Complementary MOSFET N- & P-Channel Enhancement Mode ELM34600AA-N Field Effect Transistor Capacitance(pF) -VGS - Gate-to-Source Voltage(V) NIKO-SEM 20 7- 7 7 Crss 0 5 10 15 -VDS ,Drain-to-Source Voltage(V) 20 DEC-19-2005