ELM ELM34600AA-N Complementary mosfet Datasheet

Complementary MOSFET
ELM34600AA-N
■General Description
■Features
ELM34600AA-N uses advanced trench
technology to provide excellent Rds(on)
and low gate charge.
•
•
•
•
N-channel
P-channel
Vds=30V
Id=7A
Rds(on) < 27.5mΩ(Vgs=10V)
Rds(on) < 40.0mΩ(Vgs=4.5V)
Vds=-30V
Id=-5A
Rds(on) < 45mΩ(Vgs=-10V)
Rds(on) < 80mΩ(Vgs=-4.5V)
■Maximum Absolute Ratings
Parameter
Drain-source voltage
Gate-source voltage
Ta=25°C
Continuous drain current
Ta=70°C
Pulsed drain current
Symbol
N-ch (Max.)
P-ch (Max.)
Vds
30
-30
V
Vgs
±20
7
±20
-5
V
6
20
-4
-20
2.0
1.3
-55 to 150
2.0
1.3
-55 to 150
Id
Idm
Ta=25°C
Ta=70°C
Junction and storage temperature range
Power dissipation
Pd
Tj,Tstg
Unit Note
A
A
3
W
°C
■Thermal Characteristics
Parameter
Maximum junction-to-ambient
Symbol
Rθja
Device
N-ch
Maximum junction-to-ambient
Rθja
P-ch
■Pin configuration
SOP-8(TOP VIEW)
1
8
2
7
3
6
4
5
Typ.
Max.
62.5
Unit
°C/W
62.5
°C/W
Note
■Circuit
Pin No.
1
2
Pin name
SOURCE1
GATE1
3
4
5
SOURCE2
GATE2
DRAIN2
6
7
8
DRAIN2
DRAIN1
DRAIN1
7-1
• N-ch
• P-ch
D1
G1
D2
G2
S1
S2
Complementary MOSFET
ELM34600AA-N
■Electrical Characteristics (N-ch)
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Symbol
Conditions
BVdss Id=250μA, Vgs=0V
Zero gate voltage drain current
Idss
Vds=24V, Vgs=0V
Vds=20V, Vgs=0V, Tj=55°C
Gate-body leakage current
Gate threshold voltage
On state drain current
Igss
Vds=0V, Vgs=±20V
Vgs(th) Vds=Vgs, Id=250μA
Id(on) Vgs=10V, Vds=5V
Static drain-source on-resistance
Rds(on)
Min.
Typ.
Ta=25°C
Max. Unit Note
30
1.0
20
V
1.5
1
10
μA
±100
nA
2.5
V
A
1
mΩ
1
S
1
1
V
1
1.3
2.6
A
A
3
Vgs=10V, Id=7A
20.5
27.5
30.0
16
40.0
Forward transconductance
Gfs
Vgs=4.5V, Id=6A
Vds=5V, Id=7A
Diode forward voltage
Vsd
If=1A, Vgs=0V
Max.body-diode continuous current
Pulsed current
Is
Ism
DYNAMIC PARAMETERS
Input capacitance
Output capacitance
Ciss
Coss Vgs=0V, Vds=15V, f=1MHz
680
105
pF
pF
Crss
75
pF
Qg
14.0
nC
2
2
2
2
Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time
Qgs Vgs=10V, Vds=15V, Id=7A
Qgd
td(on)
1.9
3.3
4.6
7.0
nC
nC
ns
Turn-on rise time
Turn-off delay time
tr
Vgs=10V, Vds=10V, Id≈1A
td(off) Rgen=3Ω
4.0
20.0
6.0
30.0
ns
ns
2
2
5.0
8.0
ns
2
Turn-off fall time
tf
NOTE :
1. Pulse test : Pulsed width≤300μsec and Duty cycle≤2%.
2. Independent of operating temperature.
3. Pulsed width limited by maximum junction temperature.
4. Duty cycle ≤ 1%.
7- 2
NIKO-SEM
P5003QVG
N- & P-Channel Enhancement Mode
Field Effect Transistor
Complementary
MOSFET
SOP-8
Lead-Free
ELM34600AA-N
■Typical
Electrical and Thermal Characteristics (N-ch)
N-CHANNEL
Body Diode Forward Voltage Variation with Source Current and Temperature
100
V GS = 0V
T A = 125°C
Is - Reverse Drain Current(A)
10
7- 3
-55°C
0.1
0.01
0.001
4
25°C
1
0
0.4
0.2
0.6
0.8
1.0
VSD - Body Diode Forward Voltage(V)
1.2
1.4
DEC-19-2005
NIKO-SEM
MOSFET
N-Complementary
& P-Channel Enhancement
Mode
ELM34600AA-N
Field
Effect Transistor
P5003QVG
SOP-8
Lead-Free
7- 4
5
DEC-19-2005
Complementary MOSFET
ELM34600AA-N
■Electrical Characteristics (P-ch)
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Symbol
Conditions
Min.
BVdss Id=-250μA, Vgs=0V
-30
Zero gate voltage drain current
Idss
Vds=-24V, Vgs=0V
Vds=-20V, Vgs=0V, Tj=55°C
Gate-body leakage current
Igss
Vds=0V, Vgs=±20V
Gate threshold voltage
On state drain current
Vgs(th) Vds=Vgs, Id=-250μA
Id(on) Vgs=-10V, Vds=-5V
Static drain-source on-resistance
Rds(on)
-1.0
-20
Typ.
Ta=25°C
Max. Unit Note
V
-1.5
-1
-10
μA
±100
nA
-2.5
V
A
1
mΩ
1
S
1
-1
V
1
-1.3
-2.6
A
A
3
Vgs=-10V, Id=-5A
37.5
45.0
62.0
13
80.0
Forward transconductance
Gfs
Vgs=-4.5V, Id=-4A
Vds=-5V, Id=-5A
Diode forward voltage
Vsd
If=-1A, Vgs=0V
Max.body-diode continuous current
Pulsed current
Is
Ism
DYNAMIC PARAMETERS
Input capacitance
Output capacitance
Ciss
Coss Vgs=0V, Vds=-15V, f=1MHz
780
145
pF
pF
Crss
79
pF
15.1
nC
2
2.1
4.0
7.7
11.5
nC
nC
ns
2
2
2
5.7
20.0
8.5
30.0
ns
ns
2
2
9.5
14.0
ns
2
Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge
Qg
Vgs=-10V, Vds=-15V
Id=-5A
Gate-source charge
Gate-drain charge
Turn-on delay time
Qgs
Qgd
td(on)
Turn-on rise time
Turn-off delay time
tr
Vgs=-10V, Vds=-10V
td(off) Id≈-1A, Rgen=3Ω
Turn-off fall time
tf
NOTE :
1. Pulse test : Pulsed width≤300μsec and Duty cycle≤2%.
2. Independent of operating temperature.
3. Pulsed width limited by maximum junction temperature.
7- 5
NIKO-SEM
P5003QVG
Complementary
MOSFET
N- &
P-Channel Enhancement
Mode
Field
Effect Transistor
ELM34600AA-N
SOP-8
Lead-Free
■Typical Electrical and Thermal Characteristics (P-ch)
P-CHANNEL
-Is - Reverse Drain Current(A)
Body Diode Forward Voltage Variation with Source Current and Temperature
100
V GS = 0V
10
1
0.1
25°C
-55°C
0.01
0.001
0
7 - 66
T A = 125°C
0.2
0.6
0.8
1.0
1.2
0.4
-VSD - Body Diode Forward Voltage(V)
1.4
DEC-19-2005
10
Gate Charge Characteristics
ID = -5A
VDS = -5V
-15V
6
4
f=1 MHz
VGS=0V
1000
Ciss
800
600
400
Coss
200
2
0
0
5
10
Qg -Gate Charge(nC)
15
SOP-8
Lead-Free
Capacitance Characteristics
1200
-10V
8
0
P5003QVG
Complementary MOSFET
N- & P-Channel Enhancement Mode
ELM34600AA-N
Field
Effect Transistor
Capacitance(pF)
-VGS - Gate-to-Source Voltage(V)
NIKO-SEM
20
7- 7
7
Crss
0
5
10
15
-VDS ,Drain-to-Source Voltage(V)
20
DEC-19-2005
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