ON BUH51 Power transistor 3 amperes 800 volts 50 watt Datasheet

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by BUH51/D
SEMICONDUCTOR TECHNICAL DATA
POWER TRANSISTOR
3 AMPERES
800 VOLTS
50 WATTS
The BUH51 has an application specific state–of–art die designed for use in
50 Watts Halogen electronic transformers.
This power transistor is specifically designed to sustain the large inrush current
during either the start–up conditions or under a short circuit across the load.
This High voltage/High speed product exhibits the following main features:
• Improved Efficiency Due to the Low Base Drive Requirements:
— High and Flat DC Current Gain hFE
— Fast Switching
• Robustness Thanks to the Technology Developed to Manufacture
this Device
• Motorola “6 SIGMA” Philosophy Providing Tight and Reproducible
Parametric Distributions
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CASE 77–07
TO–225AA TYPE
MAXIMUM RATINGS
Symbol
Value
Unit
Collector–Emitter Sustaining Voltage
Rating
VCEO
500
Vdc
Collector–Base Breakdown Voltage
VCBO
800
Vdc
Collector–Emitter Breakdown Voltage
VCES
800
Vdc
Emitter–Base Voltage
VEBO
10
Vdc
Collector Current — Continuous
— Peak (1)
IC
ICM
3
8
Adc
Base Current — Continuous
Base Current — Peak (1)
IB
IBM
2
4
Adc
*Total Device Dissipation @ TC = 25_C
*Derate above 25°C
PD
50
0.4
Watt
W/_C
TJ, Tstg
– 65 to 150
_C
RθJC
RθJA
2.5
100
TL
260
Operating and Storage Temperature
THERMAL CHARACTERISTICS
Thermal Resistance
— Junction to Case
— Junction to Ambient
Maximum Lead Temperature for Soldering Purposes:
1/8″ from case for 5 seconds
_C/W
_C
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
This document contains information on a new product. Specifications and information herein are subject to change without notice.
 Motorola, Inc. 1995
Motorola Bipolar Power Transistor Device Data
1
BUH51
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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector–Emitter Sustaining Voltage
(IC = 100 mA, L = 25 mH)
VCEO(sus)
500
550
Vdc
Collector–Base Breakdown Voltage
(ICBO = 1 mA)
VCBO
800
950
Vdc
Emitter–Base Breakdown Voltage
(IEBO = 1 mA)
VEBO
10
12.5
Vdc
Collector Cutoff Current
(VCE = Rated VCEO, IB = 0)
ICEO
100
µAdc
OFF CHARACTERISTICS
Collector Cutoff Current
(VCE = Rated VCES, VEB = 0)
@ TC = 25°C
@ TC = 125°C
ICES
100
1000
µAdc
Collector Base Current
(VCB = Rated VCBO, VEB = 0)
@ TC = 25°C
@ TC = 125°C
ICBO
100
1000
µAdc
IEBO
100
µAdc
Emitter–Cutoff Current
(VEB = 9 Vdc, IC = 0)
ON CHARACTERISTICS
Base–Emitter Saturation Voltage
(IC = 1 Adc, IB = 0.2 Adc)
@ TC = 25°C
@ TC = 125°C
VBE(sat)
0.92
0.8
1.1
Vdc
Collector–Emitter Saturation Voltage
(IC = 1 Adc, IB = 0.2 Adc)
@ TC = 25°C
@ TC = 125°C
VCE(sat)
0.3
0.32
0.5
0.6
Vdc
DC Current Gain (IC = 1 Adc, VCE = 1 Vdc)
@ TC = 25°C
@ TC = 125°C
hFE
DC Current Gain (IC = 2 Adc, VCE = 5 Vdc)
8
6
10
8
@ TC = 25°C
@ TC = 125°C
5
4
7.5
6.2
—
DC Current Gain (IC = 0.8 Adc, VCE = 5 Vdc)
@ TC = 25°C
@ TC = 125°C
10
8
14
13
—
DC Current Gain (IC = 10 mAdc, VCE = 5 Vdc)
@ TC = 25°C
@ TC = 125°C
14
18
20
25
—
1.7
V
—
DYNAMIC SATURATION VOLTAGE
VCE(dsat)
IC = 1 Adc, IB1 = 0.2 Adc
VCC = 300 V
@ TC = 25°C
@ TC = 125°C
6
V
IC = 2 Adc, IB1 = 0.4 Adc
VCC = 300 V
@ TC = 25°C
5.1
V
@ TC = 125°C
15
V
fT
23
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1 MHz)
Cob
34
100
pF
Input Capacitance
(VEB = 8 Vdc, f = 1 MHz)
Cib
200
500
pF
Dynamic Saturation
Voltage:
Determined 3 µs after
rising IB1 reaches
90% of final IB1
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth
(IC = 1 Adc, VCE = 10 Vdc, f = 1 MHz)
2
Motorola Bipolar Power Transistor Device Data
BUH51
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ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS: Resistive Load (D.C. ≤ 10%, Pulse Width = 40 µs)
Turn–on Time
IC = 1 Adc, IB1 = 0.2 Adc
IB2 = 0.2 Adc
VCC = 300 Vdc
Turn–off Time
Turn–on Time
IC = 2 Adc, IB1 = 0.4 Adc
IB2 = 0.4 Adc
VCC = 300 Vdc
Turn–off Time
@ TC = 25°C
@ TC = 125°C
ton
110
125
150
ns
@ TC = 25°C
@ TC = 125°C
toff
3.5
4.1
4
µs
@ TC = 25°C
@ TC = 125°C
ton
700
1250
1000
ns
@ TC = 25°C
@ TC = 125°C
toff
1.75
2.1
2
µs
SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 µH)
Fall Time
@ TC = 25°C
@ TC = 125°C
tfi
200
320
300
ns
@ TC = 25°C
@ TC = 125°C
tsi
3.4
4
3.75
µs
Crossover Time
@ TC = 25°C
@ TC = 125°C
tc
350
640
500
ns
Fall Time
@ TC = 25°C
@ TC = 125°C
tfi
140
300
200
ns
@ TC = 25°C
@ TC = 125°C
tsi
2.3
2.8
2.75
µs
@ TC = 25°C
@ TC = 125°C
tc
400
725
600
ns
IC = 1 Adc
IB1 = 0.2 Adc
IB2 = 0.2 Adc
Storage Time
IC = 2 Adc
IB1 = 0.4 Adc
IB2 = 0.4 Adc
Storage Time
Crossover Time
TYPICAL STATIC CHARACTERISTICS
100
100
VCE = 3 V
hFE , DC CURRENT GAIN
hFE , DC CURRENT GAIN
VCE = 1 V
TJ = 125°C
10
TJ = – 20°C
1
0.001
TJ = 25°C
0.01
0.1
1
IC, COLLECTOR CURRENT (AMPS)
Figure 1. DC Current Gain @ 1 Volt
Motorola Bipolar Power Transistor Device Data
10
TJ = 125°C
10
TJ = – 20°C
1
0.001
TJ = 25°C
0.01
0.1
1
IC, COLLECTOR CURRENT (AMPS)
10
Figure 2. DC Current Gain @ 3 Volt
3
BUH51
TYPICAL STATIC CHARACTERISTICS
100
10
IC/IB = 5
VCE , VOLTAGE (VOLTS)
hFE , DC CURRENT GAIN
VCE = 5 V
TJ = 125°C
10
TJ = – 20°C
1
0.001
TJ = 25°C
0.01
0.1
1
IC, COLLECTOR CURRENT (AMPS)
TJ = 125°C
1
TJ = 25°C
TJ = – 20°C
0.1
0.01
0.001
10
Figure 3. DC Current Gain @ 5 Volt
10
Figure 4. Collector–Emitter Saturation Voltage
10
1.5
IC/IB = 5
1
VBE , VOLTAGE (VOLTS)
IC/IB = 10
VCE , VOLTAGE (VOLTS)
0.01
0.1
1
IC, COLLECTOR CURRENT (AMPS)
TJ = 25°C
TJ = – 20°C
1
TJ = – 20°C
TJ = 25°C
0.5
TJ = 125°C
TJ = 125°C
0.1
0.001
0.1
1
0.01
IC, COLLECTOR CURRENT (AMPS)
0
0.001
10
Figure 5. Collector–Emitter Saturation Voltage
0.1
1
0.01
IC, COLLECTOR CURRENT (AMPS)
10
Figure 6. Base–Emitter Saturation Region
1.5
2
IC/IB = 10
TJ = 25°C
1
TJ = – 20°C
0.5
TJ = 25°C
TJ = 125°C
0
0.001
1.5
3A
2A
1A
1
0.5
VCE(sat)
(IC = 500 mA)
0.1
1
0.01
IC, COLLECTOR CURRENT (AMPS)
Figure 7. Base–Emitter Saturation Region
4
VCE , VOLTAGE (VOLTS)
VBE , VOLTAGE (VOLTS)
4A
10
0
0.01
1
0.1
IB, BASE CURRENT (A)
Figure 8. Collector Saturation Region
Motorola Bipolar Power Transistor Device Data
10
BUH51
TYPICAL STATIC CHARACTERISTICS
1000
1000
TJ = 25°C
900
Cib
BVCER (VOLTS)
C, CAPACITANCE (pF)
TJ = 25°C
f(test) = 1 MHz
100
Cob
800
700
600
BVCER @ 10 mA
500
BVCER(sus) @ 200 mA, 25 mH
400
10
1
10
VR, REVERSE VOLTAGE (VOLTS)
100
10
Figure 9. Capacitance
100
1000
RBE (Ω)
10000
100000
Figure 10. Resistive Breakdown
TYPICAL SWITCHING CHARACTERISTICS
2500
10
IB1 = IB2
VCC = 300 V
PW = 40 µs
8
IC/IB = 5
t, TIME ( µs)
t, TIME (ns)
2000
1500
1000
IC/IB = 5
6
4
2
500
TJ = 125°C
TJ = 25°C
0
0
1
2
IC, COLLECTOR CURRENT (AMPS)
IB1 = IB2
VCC = 300 V
PW = 40 µs
TJ = 125°C
TJ = 25°C
0
3
0
Figure 11. Resistive Switching, ton
1
2
IC, COLLECTOR CURRENT (AMPS)
3
Figure 12. Resistive Switch Time, toff
4
7
IC/IB = 5
t, TIME ( µs)
3
t, TIME ( µs)
5
IC/IB = 10
IB1 = IB2
VCC = 15 V
VZ = 300 V
LC = 200 µH
IB1 = IB2
VCC = 15 V
VZ = 300 V
LC = 200 µH
2
3
1
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
0
1
0
2
1
IC, COLLECTOR CURRENT (AMPS)
Figure 13. Inductive Storage Time, tsi
Motorola Bipolar Power Transistor Device Data
3
0.5
1
1.5
IC, COLLECTOR CURRENT (AMPS)
2
Figure 13 Bis. Inductive Storage Time, tsi
5
BUH51
TYPICAL SWITCHING CHARACTERISTICS
1000
800
IB1 = IB2
VCC = 15 V
800 VZ = 300 V
LC = 200 µH
tc
t, TIME (ns)
t, TIME (ns)
IB1 = IB2
VCC = 15 V
VZ = 300 V
600 L = 200 µH
C
tc
400
tc
600
400
tfi
ttfifi
200
200
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
tfi
0
0
0.5
1.5
1
2
IC, COLLECTOR CURRENT (AMPS)
2.5
0.5
1
1.5
2
IC, COLLECTOR CURRENT (AMPS)
Figure 14. Inductive Storage Time,
tc & tfi @ IC/IB = 5
Figure 15. Inductive Storage Time,
tc & tfi @ IC/IB = 10
4
450
IBoff = IB2
VCC = 15 V
VZ = 300 V
LC = 200 µH
400
t fi , FALL TIME (ns)
350
tsi , STORAGE TIME (µs)
2.5
3
IC = 0.8 A
2
IC = 2 A
TJ = 125°C
TJ = 25°C
1
2
4
IB1 = IB2
VCC = 15 V
VZ = 300 V
LC = 200 µH
6
hFE, FORCED GAIN
300
250
200
150
100
8
10
3
5
4
t c , CROSSOVER TIME (ns)
6
7
hFE, FORCED GAIN
8
9
Figure 17. Inductive Fall Time
TJ = 125°C
TJ = 25°C
700
IC = 0.8 A
0
Figure 16. Inductive Storage Time
800
TJ = 125°C
TJ = 25°C
IC = 2 A
50
IC = 2 A
600
IB1 = IB2
VCC = 15 V
VZ = 300 V
LC = 200 µH
500
400
300
200
IC = 0.8 A
100
3
4
5
6
7
hFE, FORCED GAIN
8
9
10
Figure 18. Inductive Crossover Time
6
Motorola Bipolar Power Transistor Device Data
10
BUH51
TYPICAL SWITCHING CHARACTERISTICS
10
VCE
9
dyn 1 µs
90% IC
IC
8
6
0V
tfi
tsi
7
dyn 3 µs
10% IC
10% Vclamp
Vclamp
5
tc
4
90% IB
3
1 µs
2
3 µs
IB
90% IB1
IB
1
0
TIME
Figure 19. Dynamic Saturation Voltage
Measurements
0
1
2
3
4
TIME
5
6
7
8
Figure 20. Inductive Switching Measurements
Table 1. Inductive Load Switching Drive Circuit
+15 V
1 µF
150 Ω
3W
100 Ω
3W
IC PEAK
100 µF
MTP8P10
VCE PEAK
VCE
MTP8P10
RB1
MPF930
IB1
MUR105
MPF930
+10 V
Iout
IB
A
50 Ω
MJE210
COMMON
150 Ω
3W
500 µF
IB2
RB2
MTP12N10
1 µF
Inductive Switching
L = 200 µH
RB2 = 0
VCC = 15 Volts
RB1 selected for
desired IB1
V(BR)CEO(sus)
L = 10 mH
RB2 = ∞
VCC = 20 Volts
IC(pk) = 100 mA
–Voff
RBSOA
L = 500 µH
RB2 = 0
VCC = 15 Volts
RB1 selected for
desired IB1
TYPICAL THERMAL RESPONSE
POWER DERATING FACTOR
1
SECOND BREAKDOWN
DERATING
0.8
0.6
THERMAL DERATING
0.4
0.2
0
20
40
80
120
100
60
TC, CASE TEMPERATURE (°C)
140
160
Figure 21. Forward Bias Power Derating
Motorola Bipolar Power Transistor Device Data
7
BUH51
TJ(pk) may be calculated from the data in Figure 24. At any
case temperatures, thermal limitations will reduce the power
that can be handled to values less than the limitations
imposed by second breakdown. For inductive loads, high
voltage and current must be sustained simultaneously during
turn–off with the base to emitter junction reverse biased. The
safe level is specified as a reverse biased safe operating
area (Figure 23). This rating is verified under clamped
conditions so that the device is never subjected to an
avalanche mode.
There are two limitations on the power handling ability of a
transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 22 is based
on T C = 25°C; T J(pk) is variable depending on power level.
Second breakdown pulse limits are valid for duty cycles to
10% but must be derated when T C > 25°C. Second
breakdown limitations do not derate the same as thermal
limitations. Allowable current at the voltages shown on
Figure 22 may be found at any case temperature by using
the appropriate curve on Figure 21.
4
10
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
100
1 µs
10 µs
1 ms
1
DC
5 ms
EXTENDED
SOA
0.1
GAIN ≥ 4
3
2
1
–5 V
0V
0.01
TC ≤ 125°C
LC = 500 µH
–1.5 V
0
10
1000
100
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
200
Figure 22. Forward Bias Safe Operating Area
500
300
400
600
700
800
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 23. Reverse Bias Safe Operating Area
TYPICAL THERMAL RESPONSE
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
1
0.5
0.2
0.1
0.1
P(pk)
0.05
0.02
t1
t2
DUTY CYCLE, D = t1/t2
SINGLE PULSE
0.01
0.01
0.1
1
RθJC(t) = r(t) RθJC
RθJC = 2.5°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) RθJC(t)
10
100
1000
t, TIME (ms)
Figure 24. Typical Thermal Response (ZθJC(t)) for BUH51
8
Motorola Bipolar Power Transistor Device Data
900
BUH51
PACKAGE DIMENSIONS
–B–
U
F
Q
–A–
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
C
M
1 2 3
H
K
J
V
G
S
R
0.25 (0.010)
A
M
M
B
M
D 2 PL
0.25 (0.010)
M
A
M
B
M
DIM
A
B
C
D
F
G
H
J
K
M
Q
R
S
U
V
INCHES
MIN
MAX
0.425
0.435
0.295
0.305
0.095
0.105
0.020
0.026
0.115
0.130
0.094 BSC
0.050
0.095
0.015
0.025
0.575
0.655
5 _ TYP
0.148
0.158
0.045
0.055
0.025
0.035
0.145
0.155
0.040
–––
MILLIMETERS
MIN
MAX
10.80
11.04
7.50
7.74
2.42
2.66
0.51
0.66
2.93
3.30
2.39 BSC
1.27
2.41
0.39
0.63
14.61
16.63
5 _ TYP
3.76
4.01
1.15
1.39
0.64
0.88
3.69
3.93
1.02
–––
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
CASE 77–08
TO–225AA TYPE
ISSUE V
Motorola Bipolar Power Transistor Device Data
9
BUH51
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
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10
◊
Motorola Bipolar Power Transistor Device Data
*BUH51/D*
BUH51/D