DSK ERA38-04 High efficiency rectifier Datasheet

Diode Semiconductor Korea ERA38-04 --- ERA38-06
VOLTAGE RANGE: 400 --- 600 V
CURRENT: 0.5 A
HIGH EFFICIENCY RECTIFIER
FEATURES
Low cost
Diffused junction
DO - 41
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with alcohol,Isopropanol
and sim ilar s olvents
The plas tic m aterial carries U/L recognition 94V-0
MECHANICAL DATA
Cas e:JEDEC DO--41,m olded plas tic
Term inals: Axial lead ,solderable per
MIL- STD-202,Method 208
Dimensions in millimeters
Polarity: Color band denotes cathode
Weight: 0.012 ounces,0.34 gram s
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
am bient tem perature unless otherwise s pecified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
ERA38 - 04
ERA38 - 05
ERA38 - 06
UNITS
Maximum recurrent peak reverse voltage
V RRM
400
500
600
V
Maximum RMS voltage
V RMS
280
350
420
V
Maximum DC blocking voltage
V DC
400
500
600
V
Maximum average forw ard rectif ied current
9.5mm lead length,
@TA =75
IF(AV)
0.5
A
IFSM
10.0
A
VF
2.50
V
Peak forw ard surge current
8.3ms single half -sine-w ave
superimposed on rated load
@TJ =125
Maximum instantaneous forw ard voltage
@ 0.5A
Maximum reverse current
@TA =25
at rated DC blocking voltage @TA =100
5.0
IR
Maximum reverse recovery time
(Note1)
t rr
Typical junction capacitance
(Note2)
CJ
Typical thermal resistance
(Note3)
Rθ JA
60
TJ
- 55 ----- + 150
TSTG
- 55 ----- + 150
Operating junction temperature range
Storage temperature range
A
50.0
ns
50
20
15
pF
/W
NOTE: 1. Measured with I F =0.5A, I R=1A, I rr=0.25A.
2. Measured at 1.0MH Z and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
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Diode Semiconductor Korea
ERA38-04 -- ERA38-06
FIG.1--TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
trr
10
N1.
50
N1.
+0.5A
D.U.T.
(+)
0
PULSE
GENERATOR
(NOTE2)
(+)
25VDC
(approx)
(-)
1
NONINDUCTIVE
OSCILLOSCOPE
(NOTE1)
-0 .2 5 A
(-)
-1 .0 A
1cm
NOTES:1.RISE TIME=7ns MAX.INPUT IMPEDANCE=1MΩ.22pF
2.RISE TIME=10ns MAX.SOURCE IMPEDANCE=50Ω.
0.5
Single Phase
Half Wave 60Hz
Resisive or
Inductive Load
0.3
0.2
0.1
0
0
20
40
60
80
100 120
140
150
40
20
10
TJ=25
2
1
0.1 0.2
8
6
4
2
0
1
2
4
8 10
20
0.4
1
2
4
10
20
40
100
40 60 80 100
NUMBER OF CYCLES AT 60Hz
FIG.5 -- TYPICAL FORWARD CHARACTERISTIC
10
1.0
AMPERES
AMPERES
10
INSTANTANEOUS FORWARD CURRENT
TJ=125
8.3ms Single Half
Sine-Wave
12
ERA38-04----ERA38-05
4
REVERSE VOLTAGE,VOLTS
16
14
ERA38-06
60
AMBIENT TEMPERATURE.
FIG.4--PEAK FORWARD SURGE CURRENT
PEAK FORWARD SURGE CURRENT.
200
100
JUNCTION CAPACITANCE,pF
0.6
0.4
FIG.3--TYPICAL JUNCTION CAPACITANCE
Z
0.7
AMPERES
AVERAGE FORWARD RECTIFIED CURRENT.
FIG.2 --FORWARD DERATING CURVE
SET TIME BASE FOR 20/30 ns/cm
0.5
0.1
0.01
0
TJ=25
Pulse Width=300µS
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
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