Diode Semiconductor Korea ERA38-04 --- ERA38-06 VOLTAGE RANGE: 400 --- 600 V CURRENT: 0.5 A HIGH EFFICIENCY RECTIFIER FEATURES Low cost Diffused junction DO - 41 Low leakage Low forward voltage drop High current capability Easily cleaned with alcohol,Isopropanol and sim ilar s olvents The plas tic m aterial carries U/L recognition 94V-0 MECHANICAL DATA Cas e:JEDEC DO--41,m olded plas tic Term inals: Axial lead ,solderable per MIL- STD-202,Method 208 Dimensions in millimeters Polarity: Color band denotes cathode Weight: 0.012 ounces,0.34 gram s Mounting position: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 am bient tem perature unless otherwise s pecified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. ERA38 - 04 ERA38 - 05 ERA38 - 06 UNITS Maximum recurrent peak reverse voltage V RRM 400 500 600 V Maximum RMS voltage V RMS 280 350 420 V Maximum DC blocking voltage V DC 400 500 600 V Maximum average forw ard rectif ied current 9.5mm lead length, @TA =75 IF(AV) 0.5 A IFSM 10.0 A VF 2.50 V Peak forw ard surge current 8.3ms single half -sine-w ave superimposed on rated load @TJ =125 Maximum instantaneous forw ard voltage @ 0.5A Maximum reverse current @TA =25 at rated DC blocking voltage @TA =100 5.0 IR Maximum reverse recovery time (Note1) t rr Typical junction capacitance (Note2) CJ Typical thermal resistance (Note3) Rθ JA 60 TJ - 55 ----- + 150 TSTG - 55 ----- + 150 Operating junction temperature range Storage temperature range Ａ 50.0 ns 50 20 15 pF /W NOTE: 1. Measured with I F =0.5A, I R=1A, I rr=0.25A. 2. Measured at 1.0MH Z and applied rev erse v oltage of 4.0V DC. 3. Thermal resistance f rom junction to ambient. www.diode.kr Diode Semiconductor Korea ERA38-04 -- ERA38-06 FIG.1--TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC trr 10 N1. 50 N1. +0.5A D.U.T. (+) 0 PULSE GENERATOR (NOTE2) (+) 25VDC (approx) (-) 1 NONINDUCTIVE OSCILLOSCOPE (NOTE1) -0 .2 5 A (-) -1 .0 A 1cm NOTES:1.RISE TIME=7ns MAX.INPUT IMPEDANCE=1MΩ.22pF 2.RISE TIME=10ns MAX.SOURCE IMPEDANCE=50Ω. 0.5 Single Phase Half Wave 60Hz Resisive or Inductive Load 0.3 0.2 0.1 0 0 20 40 60 80 100 120 140 150 40 20 10 TJ=25 2 1 0.1 0.2 8 6 4 2 0 1 2 4 8 10 20 0.4 1 2 4 10 20 40 100 40 60 80 100 NUMBER OF CYCLES AT 60Hz FIG.5 -- TYPICAL FORWARD CHARACTERISTIC 10 1.0 AMPERES AMPERES 10 INSTANTANEOUS FORWARD CURRENT TJ=125 8.3ms Single Half Sine-Wave 12 ERA38-04----ERA38-05 4 REVERSE VOLTAGE,VOLTS 16 14 ERA38-06 60 AMBIENT TEMPERATURE. FIG.4--PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT. 200 100 JUNCTION CAPACITANCE,pF 0.6 0.4 FIG.3--TYPICAL JUNCTION CAPACITANCE Z 0.7 AMPERES AVERAGE FORWARD RECTIFIED CURRENT. FIG.2 --FORWARD DERATING CURVE SET TIME BASE FOR 20/30 ns/cm 0.5 0.1 0.01 0 TJ=25 Pulse Width=300µS 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4 INSTANTANEOUS FORWARD VOLTAGE, VOLTS www.diode.kr