BAS19 - BAS21 SURFACE MOUNT SWITCHING DIODE Features SOT-23 z Silicon planar epitaxial high speed diode z For switching and general purpose applications B Mechanical Data z z Dim Min Max A 0.37 0.51 B 1.20 1.40 C 2.30 2.50 D 0.89 1.03 A C TOP VIEW E Case:SOT-23 Weight: 0.008 grams (approximate) D G E 0.45 0.60 H G 1.78 2.05 H 2.80 3.00 J 0.013 0.10 K 0.903 1.10 L 0.45 0.61 M 0.085 0.180 a 0° 8° K J M L All Dimensions in mm Maximum Ratings and Electrical Characteristics TA = 25C unless otherwise specified Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Parameter Working g peak reverse voltage g =DC Blocking voltage Test Conditions Repetitive peak reverse voltage g Repetitive peak forward current Average forward current Forward current Junction and storage temperature range Parameter Forward voltage g Reverse current Reverse breakdown voltage g Reverse recovery time Diode capacitance Dynamic forward resistance Symbol VRWM =VR t=1ms t=1s Peak forward surge g current Power dissipation Type BAS19 BAS20 BAS21 BAS19 BAS20 BAS21 tp<0.3ms TCase=TL (8mm from Case) =Tamb TCase=TL (8mm from Case) =Tamb Tj = 25_C Test Conditions IF=100mA IF=200mA VR=VRmax VR=VRmax, Tj= 150°C IR=100mA, tp<0.3ms IR=100mA IR=100mA, VR<275V IF=IR=10mA, RL=100W, VR=6V to IR=1mA. RL=100W VR=0, f= 1MHz IF=10mA 1 of 1 Type BAS19 BAS20 BAS21 VRRM VRRM VRRM IFSM IFSM IFRM IFAV IF Value 100 150 200 120 200 250 2.5 0.5 625 200 400 Unit V V V V V V A A mA mA mA Ptot 250 mW Tj=Tstg –55...+150 °C Symbol VF VF IR IR V(BR)R V(BR)R V(BR)R trr CD rf Min Typ Max 1.0 1.25 100 100 50 Unit V V nA mA V V V ns 5 pF 120 200 250 5 W