SEMICONDUCTORS BT151 Series THYRISTORS FEATURE Glass passivated thyristors in a plastic TO220 package. They are intended for use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating and static switching. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Value Ratings Unit BT151-500R BT151-650R BT151-800R VDRM VRRM IT(RMS) IT(AV) ITSM Repetitive peak off-state voltage Repetitive peak reverse voltage RMS on-state current Average on-state current Non-repetitive peak onstate current PGM Peak gate power PG(AV) Average gate power Tstg Tj 500 650 800 500 650 800 V Storage temperature range Operating junction temperature 12 A 7.5 A 100 A 5 W 0.5 W -45 to +150 °C 110 °C THERMAL CHARACTERISTICS Symbol R∂j-mb R∂JA 26/09/2012 Ratings Thermal resistance junction to mounting base Thermal resistance junction to ambient COMSET SEMICONDUCTORS Value Unit ≤ 1.3 ≤ 60 °C/W 1|3 SEMICONDUCTORS BT151 Series ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ Max Unit 500 650 800 500 650 800 - - 15 1.5 40 20 mA V mA mA VRRM Repetitive peak reverse voltage IGT VGT IL IH Gate trigger current Gate trigger voltage Latching current Holding current BT151-500R BT151-650R BT151-800R BT151-500R BT151-650R BT151-800R VD = 12 V; IT = 100 mA VD = 12 V; IT = 100 mA VD = 12 V; IGT = 100 mA VD = 12 V; IGT = 100 mA ID Off-state current VD = VDRM max; Tj = 125°C - - 0.5 mA IR Reverse current VR = VRRM max; Tj = 125°C - - 0.5 mA VT On-state voltage IT = 23 A - - 1.75 V Min Typ Max Unit 50 130 - V/µs 200 1000 - V/µs - 2 - µs - 70 - µs VDRM Repetitive peak off-state voltage V DYNAMIC CHARACTERISTICS TC=25°C unless otherwise noted Symbol dVD/dt tgt Ratings Critical rate of rise of off-state voltage Gate controlled turn-on time tq Circuit commutated Turn-off time 26/09/2012 Test Condition(s) VDM = 67% VDRMmax; Tj = 125°C Exponential waveform; gate open circuit VDM = 67% VDRMmax; Tj = 125°C Exponential waveform RGK = 100 Ω ITM = 40 A; VD = VDRMmax IG = 0.1 A; dIG/dt = 5 A/µs VDM = 67% VDRMmax; Tj = 125°C ITM = 20 A; VR = 25 V RGK = 100 Ω dITM/dt = 30 A/µs dVD/dt = 50 V/µS COMSET SEMICONDUCTORS 2|3 SEMICONDUCTORS BT151 Series MECHANICAL DATA CASE TO-220 Pin 1 : Pin 2 : Pin 3 : Case : Main Terminal 1 Main Terminal 2 Gate Main Terminal 2 Revised August 2012 Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical components in life support devices or systems. www.comsetsemi.com 26/09/2012 [email protected] COMSET SEMICONDUCTORS 3|3