Jiangsu BC368 To-92 plastic-encapsulate transistor Datasheet

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
TO – 92
BC368
TRANSISTOR (NPN)
1.EMITTER
FEATURES
z High Current
z Low Voltage
2.COLLECTOR
3.BASE
APPLICATIONS
z General Purpose Switching and Amplification
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
25
V
VCEO
Collector-Emitter Voltage
20
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current -Continuous
1
A
PC
Collector Power Dissipation
0.625
W
Thermal Resistance From Junction To Ambient
200
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
RθJA
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC= 0.1mA,IE=0
25
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=10mA,IB=0
20
V
Emitter-base breakdown voltage
V(BR)EBO
IE=0.01mA,IC=0
5
V
Collector cut-off current
ICBO
VCB=25V,IE=0
10
μA
Emitter cut-off current
IEBO
VEB=5V,IC=0
10
μA
hFE(1)
VCE=1V, IC=0.5A
85
hFE(2)
VCE=10V, IC=5mA
50
hFE(3)
VCE=1V, IC=1A
60
VCE(sat)
IC=1A,IB=0.1A
0.5
V
Base-emitter voltage
VBE
IC=1A, VCE=1V
1
V
Transition frequency
fT
DC current gain
Collector-emitter saturation voltage
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VCE=5V,IC=10mA,f=35MHz
1
65
375
MHz
C,Dec,2015
TO-92 Package Outline Dimensions
Symbol
A
A1
b
c
D
D1
E
e
e1
L
Φ
h
Dimensions In Millimeters
Min
Max
3.300
3.700
1.100
1.400
0.380
0.550
0.360
0.510
4.300
4.700
3.430
4.300
4.700
1.270 TYP
2.440
2.640
14.100
14.500
1.600
0.000
0.380
Dimensions In Inches
Min
Max
0.130
0.146
0.043
0.055
0.015
0.022
0.014
0.020
0.169
0.185
0.135
0.169
0.185
0.050 TYP
0.096
0.104
0.555
0.571
0.063
0.000
0.015
TO-92 Suggested Pad Layout
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2
C,Dec,2015
TO-92 7DSHDQG5HHO
ZZZFMHOHFFRP3 C,Dec,2015
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